CN102163926A - High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules - Google Patents
High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules Download PDFInfo
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Abstract
The invention particularly relates to a high-power converter based on parallel IGBT (insulated gate bipolar transistor) modules, belonging to the technical field of power electronic. Metal-film capacitors of the high-power converter adopt the high-power converter structure of a heteropolarity manner; and the polarities of the capacitors are staggered with each other. The high-power converter is featured with symmetrical circuit structure, good module current equalizing effect and low loop stray inductance so that the high-power converter is convenient for cascading chain joint modules so as to realize large power application. According to the invention, the problems that the capacity of the single IGBT module cannot meet the requirements of the high-power converter, and the current equalization of the parallel IGBT modules are solved.
Description
Technical field
The invention belongs to electric and electronic technical field, be specifically related to a kind of high-power converter based on the parallel connection of IGBT module.
Background technology
IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, by the compound full-control type voltage driven type power semiconductor that BJT (double pole triode) and MOS (insulating gate type field effect tube) form, have the advantage of low conduction voltage drop two aspects of the high input impedance of MOSFET and GTR concurrently.The GTR saturation pressure reduces, and current carrying density is big, but drive current is bigger; The MOSFET driving power is very little, and switching speed is fast, but conduction voltage drop is big, and current carrying density is little.IGBT combines the advantage of above two kinds of devices, little and the saturation pressure of driving power reduces, its frequency characteristic is between MOSFET and power transistor, but operate as normal is in tens kHz frequency ranges, in modern power electronics technology, obtain application more and more widely, in the big or middle power application of upper frequency, occupied leading position.
IGBT is the full-control type device, if add the driving positive voltage between the grid of IGBT and emitter, then MOSFET conducting becomes low resistive state between the transistorized collector electrode of PNP and the base stage like this and makes transistor turns; If voltage is 0V or negative voltage between the grid of IGBT and the emitter, then MOSFET ends, and cuts off the supply of PNP transistor base current, makes transistor end.IGBT is the same with MOSFET also to be voltage-controlled device, applies the driving voltage of tens V between its grid-emitter, has only the leakage current of μ A level to flow through, basically consumed power not.
It is fast that IGBT has switching speed, and conduction voltage drop is low, and driving power is little, and the operating frequency height is controlled characteristics such as flexible, therefore, has obtained application more and more widely in modern power electronics technology.At present, the IGBT of high voltage, big electric current is modularization, and its drive circuit has now produced the special-purpose drive circuit of integrated IGBT, and its performance is better, and reliability is higher, and volume is littler, can be in the application of big or middle power from now on dominate.But in many applications of high voltage, high-power converter, require the electric pressure of device to reach more than the 10kV, electric current reaches several thousand A, for now, the voltage and current capacity of single IGBT module is still limited, can not satisfy the demand of power electronics application technology development far away.
At present, along with the demand of market to high-power converter grows with each passing day, IGBT module scheme in parallel has become a kind of trend, and this comes from mainly that the IGBT parallel connection can provide more high current density, evenly heat distribution, flexible topology and than advantages such as high performance-price ratios.Adopt two kinds of IGBT parallel waies through regular meeting, i.e. in parallel the and brachium pontis parallel connection of IGBT module.By small-power IGBT module, high-power IGBT module being carried out the parallel connection combination, can obtain the equivalent modules of different rated current, and realize that connected mode in parallel is also very flexible, various.In addition, can reduce module heat by parallel connection and concentrate, make it obtain even temperature Gradient distribution more, lower average radiator temperature, this is of value to raising thermal cycle cycle.Therefore, the parallel connection of IGBT module is one of preferred plan of high-power converter design application.Yet, static state exists difference with dynamic performance parameter between the parallel IGBT module, will certainly cause that the device current distribution is unbalanced, can make component failure when serious even damage main circuit, for this reason, the parallel connection of IGBT module will consider how to guarantee the device current-sharing by optimizing designs such as driving, module placement.
Along with developing rapidly of modern power electronics technology and large power semiconductor device, market also increases day by day to the demand of high-power converter.At present, the capacity of large power semiconductor device is still limited, has limited the development of high-power converter, and IGBT module scheme in parallel has become a kind of development trend, and a kind of brand-new solution is provided.
Based on the high-power converter structure of IGBT module parallel connection, can be designed as the both sides that H bridge circuit left and right sides brachium pontis is arranged in direct current capacitor, middle for the metal film capacitors that are installed in parallel of organizing more, link to each other with brachium pontis IGBT by noninductive composite laminate busbar.The characteristics of this conceptual design are: annexation is simply clear, the inside modules compact conformation; But the loop stray inductance is big, IGBT module current-sharing weak effect, and direct current capacitor is exerted oneself unbalanced, and this kind scheme is used less.
High-power converter structure based on the parallel connection of IGBT module, great majority adopt H bridge circuit left and right sides brachium pontis to be arranged in the homonymy of direct current capacitor, and it is positive and negative being arranged in parallel that direct current capacitor adopts the polarity of same polarity layout-capacitor, links to each other with brachium pontis IGBT by noninductive composite laminate busbar.The characteristics of this conceptual design are: the circuit structure compactness, and module current-sharing effect is better, but the loop stray inductance is bigger, and it is higher to turn-off peak voltage.
Summary of the invention
The invention provides a kind of converter structure design, obtained in test good effect.Solve single IGBT module capacity and can not satisfy the application of high-power converter, and the problems such as current-sharing that exist of parallel IGBT module.
A kind of high-power converter based on the parallel connection of IGBT module of the present invention comprises IGBT module, direct current capacitor, H bridge circuit, drive circuit, discharge circuit, bypass circuit, cell controller, alternating current-direct current busbar and liquid cooling heat radiator, wherein:
Direct current capacitor plays the voltage supporting role, and as the input voltage of getting the energy power supply; Direct current capacitor is selected the metal film capacitors of organizing the long service life that is installed in parallel for use more, and adopts heteropolarity to arrange, links to each other with brachium pontis IGBT by noninductive composite bus bar;
The effect of H bridge circuit is that for realizing high-power output, upper and lower bridge arm adopts the parallel connection of many IGBT modules in the H bridge circuit according to controller instruction output bucking voltage; Two left and right sides brachium pontis are arranged in a side of direct current capacitor, select for use same batch, the IGBT module of same packing to carry out parallel connection, thereby guarantee the consistency of parallel IGBT module parameter; Drive circuit is used for triggering the device of IGBT module, turn on and off the characteristic unanimity for what make parallel IGBT module, select for use and be the master and slave drive circuit of big capacity IGBT modular design specially, and in order to reduce lead-in inductance, drive circuit is directly installed on the IGBT module, and described IGBT module is installed on the liquid cooling heat radiator;
The effect of alternating current-direct current busbar is that direct current capacitor and H bridge IGBT module are coupled together, and in order to reduce stray inductance, is set to the composite laminate busbar, be arranged in direct current capacitor and IGBT module directly over;
Liquid cooling heat radiator plays thermolysis, be the two independent water route, the IGBT module is turned on and off the most of heat that produces in the process shed by the water route, for ease of the cascade of chain link intermodule, the entery and delivery port of liquid cooling heat radiator designs on the same side of radiator;
The effect of discharge circuit is for direct current capacitor provides overvoltage protection, is the direct current capacitor discharge when promptly and normally withdrawing from; Discharge circuit comprises that the discharge IGBT module connects with discharge resistance, after DC bus-bar voltage surpasses the threshold value of adjusting, the conducting of discharge IGBT module, discharge to dc capacitor by discharge resistance, the discharge IGBT module is installed in the back side of liquid cooling heat radiator, discharge resistance is arranged on the below of liquid cooling heat radiator, is connected with liquid cooling heat radiator by noninductive composite bus bar exit;
The effect of bypass circuit is that the link units for whole high-power converter provides protection, and when link units was normally moved, the H bridge circuit was devoted oneself to work, and bypass circuit is out of service; When the inner generation of link units specific fault, signal reporting is given master controller, and master controller is given an order through judging, blocks the H bridge circuit, and the while bypass circuit is open-minded, and output current is transferred to bypass segment, thereby makes the fault chain link withdraw from; Bypass elements is selected the one pole mechanical switch for use, is placed on the below of liquid cooling heat radiator, links to each other with liquid cooling heat radiator by exchanging output row exit, exchanges output row and also is connected with the adjacent link unit;
Cell controller is responsible for accepting and carrying out the order that master controller issues; the state of high-power converter inside is uploaded to master controller; high-power converter is controlled, monitored and protects, and cell controller and drive circuitry arrangement are in the outside of high-power converter.
Wherein, the structure that direct current capacitor adopts the opposite sex to arrange: the metal film capacitor of the long service life that the many groups of direct current capacitor employing are installed in parallel, and adopting the polarity of heteropolarity layout-capacitor is positive and negative interlaced arrangement, and the IGBT with H bridge circuit brachium pontis links to each other by noninductive composite laminate busbar; The IGBT of H bridge circuit brachium pontis adopts the parallel connection of many IGBT modules, and be installed on the liquid cooling heat radiator, two left and right sides brachium pontis of H bridge circuit are positioned at a side of direct current capacitor, and the output of H bridge circuit links to each other with bypass circuit by exchanging output row, and links to each other with the adjacent link unit respectively; Drive circuit and absorption electric capacity are positioned at the top of IGBT, are to reduce lead-in inductance, and drive circuit is directly installed on IGBT module top; Liquid cooling heat radiator is positioned at the below of IGBT; For making things convenient for the cascade between the module, the entery and delivery port Position Design of liquid cooling heat radiator is on the same side of liquid cooling heat radiator; The discharge IGBT module arrangement is at the back side of liquid cooling heat radiator, and radiator below placement unit controller, getting can power supply, discharge resistance and bypass circuit.
The invention has the beneficial effects as follows:
High-power converter of the present invention, it is the high-power converter structure of positive and negative interlaced arrangement that metal film capacitor adopts the polarity of heteropolarity layout-capacitor, compare with other structural design scheme, this scheme has remarkable advantages: the circuit structure symmetry, the module current-sharing is effective, the loop stray inductance is little, is convenient between the chain link module cascade to realize high-power applications.
Description of drawings
The present invention is further described below in conjunction with accompanying drawing.
Fig. 1 is according to current source converter topology diagram of the present invention;
Fig. 2 is according to voltage source converter topology diagram of the present invention;
Fig. 3 is according to many level of Cascade H bridge topological diagram of the present invention;
Fig. 4 is according to single chain link module placement figure of the present invention (capacitor is in the centre);
Fig. 5 is according to capacitor same polarity plane of arrangement layout of the present invention;
Fig. 6 arranges chain link modular structure figure according to capacitor same polarity of the present invention;
Fig. 7 is according to capacitor heteropolarity plane of arrangement layout of the present invention;
Fig. 8 arranges chain link modular structure figure according to capacitor heteropolarity of the present invention;
Fig. 9 is the circuit theory schematic diagram of single chain link module.
Embodiment
Basic high-power converter can be divided into current source and voltage source two big class topological structures by dc bus character.
This high-power converter comprises alternating current-direct current busbar 8, liquid cooling heat radiator 9 and can power supply 1 by getting, direct current capacitor 2, H bridge circuit 3, drive circuit 4, discharge circuit 5, each link units that bypass circuit 6 and cell controller 7 constitute, described liquid cooling heat radiator 9 places the top of framework, alternating current-direct current busbar 8 is positioned at the top of liquid cooling heat radiator 9, be provided with H bridge circuit 3 between alternating current-direct current busbar 8 and the liquid cooling heat radiator 9, alternating current-direct current busbar 8 is connected the H bridge circuit with the direct current capacitor 2 that places the framework side, drive circuit 4 is got energy power supply 1 between H bridge circuit 3 and alternating current-direct current busbar 8, discharge circuit 5, bypass circuit 6 and cell controller 7 place the below of liquid cooling heat radiator 9 respectively.
The structure that direct current capacitor adopts the opposite sex to arrange: the i.e. metal film capacitor of the long service life that the many groups of direct current capacitor employing are installed in parallel, and adopt heteropolarity to arrange: promptly the polarity of capacitor is positive and negative interlaced arrangement, and the IGBT with H bridge circuit brachium pontis links to each other by noninductive composite laminate busbar; The IGBT of H bridge circuit brachium pontis adopts the parallel connection of many IGBT modules, and be installed on the liquid cooling heat radiator, two left and right sides brachium pontis of H bridge circuit are positioned at a side of direct current capacitor, and the output of H bridge circuit links to each other with bypass circuit by exchanging output row, and links to each other with the adjacent link unit respectively; Drive circuit and absorption electric capacity are positioned at the top of IGBT, are to reduce lead-in inductance, and drive circuit is directly installed on IGBT module top; Liquid cooling heat radiator is positioned at the below of IGBT; For making things convenient for the cascade between the module, the entery and delivery port Position Design of liquid cooling heat radiator is on the same side of liquid cooling heat radiator; The discharge IGBT module arrangement is at the back side of liquid cooling heat radiator, and radiator below placement unit controller, getting can power supply, discharge resistance and bypass circuit.As shown in Figure 9, described each link units comprises H bridge circuit 3, direct current capacitor 2, discharge circuit 5, bypass circuit 6, get energy circuit 1, cell controller 7 and drive circuit 4, the H bridge circuit, direct current capacitor C, discharge circuit and get can power supply parallel with one another, the H bridge circuit comprises two brachium pontis parallel with one another, the mid point of two brachium pontis is as the ac output end of this chain link, be parallel with a bypass circuit between the ac output end, get and power supply resulting control power supply to be offered cell controller and drive circuit, cell controller is respectively to the H bridge circuit, direct current capacitor C, discharge circuit and bypass circuit are controlled, and drive circuit drives the module (being the IGBT device) in IGBT module in the H bridge circuit (being the IGBT device) and the discharge circuit.
H bridge circuit 3 comprises two brachium pontis that are in parallel, (V1～V4) series connection constitutes each brachium pontis by upper and lower two power electronic elements, each power electronic element is flowed to by counter current by high-power IGBT device and diode and is formed in parallel, the upper end of described two brachium pontis links to each other with the positive pole of direct current capacitor C, two brachium pontis lower ends link to each other with the negative pole of direct current capacitor C, the mid point of two brachium pontis exchanges the end head and the tail with adjacent link again behind the bypass circuit in parallel between the ac output end and is connected as the ac output end of this chain link; Discharge circuit comprises IGBT device VT1, discharge resistance R and diode D1, and IGBT device and discharge resistance R are in series, and described diode D1 and discharge resistance are in parallel.
The basic topological structure of current source converter as shown in Figure 1, the pulse width modulation electrical current source inventer (PWMCSI-SGCT) that capacitor auxiliary current source inventer (CACSI), pulse width modulation electrical current source inventer (PWMCSI), thyristor are formed has mainly been experienced in the development of current source topological structure.This topology of CACSI is made up of silicon controlled rectifier, the big inductance of direct current, thyristor inverter and output filter capacitor.Because this topology is not used the PWM technology, and needs a very large output filter capacitor, the application of this topology is fewer and feweri.The characteristics of this topology of PWMCSI are by 1 SCR rectifier, 1 direct current chain inductance, and 1 GTO inverter and 1 output inductor are formed.Owing to use GTO, PWM control becomes possibility, has strengthened speed adjusting performance, has also reduced the size of inverter greatly.The characteristics of this topology of PWMCSI-SGCT are by 1 SCR rectifier or 1 SGCT pulse width modulation rectifier, 1 littler direct current chain electric capacity, and 1 SGCT inverter and 1 littler output filter capacitor are formed.
Typical voltage source converter is two level, its basic topological structure as shown in Figure 2, by 1 prime rectifier, 1 big dc capacitor and 1 inverter are formed.Typical three-level inverter topology is not control rectifier bridge by the diode of 1 12 arteries and veins or 24 arteries and veins, and 1 dc-link capacitance and 1 three level IGBT inverter are formed.Many level of Cascade H bridge topology also is a kind of many level topology of current extensive use, and as shown in Figure 3, it is to be formed by the cascade of a plurality of identical in structure H bridge circuit, thereby the mesohigh that need to obtain is used.
At present, the capacity of large power semiconductor device is still limited, has limited the development of high-power converter, and IGBT module scheme in parallel has become a kind of development trend, and a kind of brand-new solution is provided.Based on the high-power converter structure of IGBT module parallel connection, can adopt the both sides of H bridge circuit arrangement, as shown in Figure 4 at direct current capacitor.Middle is the metal film electric capacity that many groups are installed in parallel, link to each other with brachium pontis IGBT by noninductive composite bus bar, two brachium pontis lay respectively at the membrane capacitance both sides, drive plate, absorption circuit are positioned at directly over the IGBT, liquid cooling heat radiator is positioned at IGBT below, and radiator below placement unit controller, getting can circuit, discharge circuit, bypass circuit etc.Exchanging output row can link to each other with the adjacent link module, and strong power part is in the inboard, and control section is in the outside.But the loop stray inductance is big, IGBT module current-sharing weak effect, and direct current capacitor is exerted oneself unbalanced, and this kind scheme is used less.
Based on the high-power converter structure of IGBT module parallel connection, great majority adopt the homonymy of H bridge circuit arrangement at direct current capacitor, and direct current capacitor is that same polarity is arranged, its floor map as shown in Figure 5, topology layout figure as shown in Figure 6, the symbol C among the figure represents collector electrode, E represents emitter.The metal film capacitor that many groups are installed in parallel is in a side, and arranges for same polarity, link to each other with brachium pontis IGBT by noninductive composite bus bar, and the parallel connection of many IGBT modules of brachium pontis IGBT employing, two left and right sides brachium pontis of H bridge are positioned at a side of capacitor; Drive plate, absorption electric capacity are positioned at the IGBT top, and liquid cooling heat radiator is positioned at the IGBT below, and entery and delivery port is in a side of radiator; Radiator below placement unit controller, getting can power supply, discharge circuit, bypass circuit etc.The characteristics of this conceptual design are: the circuit structure compactness, and module current-sharing effect is better, but the loop stray inductance is bigger, and it is higher to turn-off peak voltage.
High-power converter based on the parallel connection of IGBT module of the present invention, metal film capacitor adopt heteropolarity to arrange that its plane figure schematic diagram as shown in Figure 7; Belong to Cascade H bridge voltage with multiple levels source current transformer, its single H bridge chain section module is made up of IGBT pulse width modulation rectifier, direct current capacitor and IGBT inverter, discharge circuit, bypass circuit etc., and chain link modular structure figure as shown in Figure 8.
Direct current capacitor plays the voltage supporting role, and as the input voltage of getting the energy power supply.Direct current capacitor is selected the metal film capacitors of organizing the long service life that is installed in parallel for use more, and adopts heteropolarity to arrange, links to each other with brachium pontis IGBT by the both positive and negative polarity busbar.
The effect of alternating current-direct current busbar is that direct current capacitor and H bridge IGBT module are coupled together, in order to reduce stray inductance, be set to the composite laminate busbar, be arranged in direct current capacitor and IGBT module directly over, and discharge IGBT and discharge resistance are coupled together by the busbar exit.In order to reduce the stray inductance in loop, the both positive and negative polarity busbar with exchange busbar and be designed to the composite laminate busbar, adopt insulation film with the both positive and negative polarity busbar with exchange busbar and carry out insulation processing, because insulation film thin thickness, can reduce the distance between the positive and negative busbar, so the busbar stray inductance of laminated construction is very little.Simultaneously, on the structural design of stack bus bar, the flow direction of the electric current of positive pole and negative pole is opposite, and can cancel out each other in the magnetic field of Xing Chenging like this, reaches the mutual inductance of eliminating both positive and negative polarity busbar lap, reduces the stray inductance in whole loop.
The H bridge circuit is the core circuit of link units, according to controller instruction output bucking voltage.In order to realize high-power output, upper and lower bridge arm adopts the parallel connection of many IGBT modules in the H bridge circuit; Two left and right sides brachium pontis are arranged in a side of direct current capacitor, and the output of H bridge circuit links to each other with bypass circuit by exchanging output row, and links to each other with the adjacent link module respectively.Because static difference with dynamic property can influence the pipe current-sharing between the parallel IGBT, therefore, guarantee the consistency of parallel IGBT module parameter, need select for use same batch, the module of same packing to carry out parallel connection.Drive plate is used to trigger the IGBT device, for realizing that parallel IGBT is opened, the turn-off characteristic unanimity, selects for use to be the master and slave drive plate of big capacity IGBT modular design specially, and in order to reduce lead-in inductance, drive plate is directly installed on the IGBT module.The IGBT module is installed on the liquid cooling heat radiator.
The optional water-filled radiator of using of liquid cooling heat radiator, be the two independent water route, the IGBT module is turned on and off the most of heat that produces in the process shed by the water route, for ease of the cascade of chain link intermodule, the entery and delivery port of liquid cooling heat radiator designs on the same side of radiator.
Discharge circuit is mainly used in to dc-link capacitance provides overvoltage protection, dc capacitor discharge when promptly and normally withdrawing from; Circuit is mainly connected with discharge resistance R by discharge IGBT device VT1 and is constituted, and after DC bus-bar voltage surpassed the threshold value of adjusting, the discharge IGBT conducting was discharged to dc-link capacitance by discharge resistance.The discharge IGBT module is installed in the back side of liquid cooling heat radiator, and discharge resistance is placed on the below of liquid cooling heat radiator, and is coupled by noninductive composite bus bar exit.
Bypass circuit provides protection for whole chain link module, and when link units was normally moved, the H bridge circuit was devoted oneself to work, and bypass circuit is out of service; When the inner generation of link units specific fault, signal reporting is given master controller, and master controller is given an order through judging, blocks the H bridge circuit, and the while bypass circuit is open-minded, and output current is transferred to bypass segment, realizes fault chain link exit function.Bypass elements is selected mechanical switch for use, is placed on the below of liquid cooling heat radiator, and is coupled by the row's of interchange exit, exchanges output row and also links to each other with the adjacent link module respectively.
Cell controller is responsible for accepting and carrying out the order that master controller issues, and can adopt single-chip microcomputer, and the state of its power model inside is uploaded to master controller, and power model is controlled, monitored and protects.Cell controller and drive controlling plate are arranged in the outside.The characteristics of this conceptual design are: annexation is simple, clear, the module placement symmetry, and current-sharing is effective, and the loop stray inductance is little, is convenient to cascade between the chain link module.
Invention has been described according to specific exemplary embodiment herein.It will be conspicuous carrying out suitable replacement to one skilled in the art or revise under not departing from the scope of the present invention.Exemplary embodiment only is illustrative, rather than to the restriction of scope of the present invention, scope of the present invention is by appended claim definition.
Claims (2)
1. the high-power converter based on the parallel connection of IGBT module is characterized in that, comprises IGBT module, direct current capacitor, H bridge circuit, drive circuit, discharge circuit, bypass circuit, cell controller, alternating current-direct current busbar and liquid cooling heat radiator, wherein:
Direct current capacitor plays the voltage supporting role, and as the input voltage of getting the energy power supply; Direct current capacitor is selected the metal film capacitors of organizing the long service life that is installed in parallel for use more, and adopts heteropolarity to arrange, links to each other with brachium pontis IGBT by noninductive composite bus bar;
The effect of H bridge circuit is that for realizing high-power output, upper and lower bridge arm adopts the parallel connection of many IGBT modules in the H bridge circuit according to controller instruction output bucking voltage; Two left and right sides brachium pontis are arranged in a side of direct current capacitor, select for use same batch, the IGBT module of same packing to carry out parallel connection, thereby guarantee the consistency of parallel IGBT module parameter; Drive circuit is used for triggering the device of IGBT module, turn on and off the characteristic unanimity for what make parallel IGBT module, select for use and be the master and slave drive circuit of big capacity IGBT modular design specially, and in order to reduce lead-in inductance, drive circuit is directly installed on the IGBT module, and described IGBT module is installed on the liquid cooling heat radiator;
The effect of alternating current-direct current busbar is that direct current capacitor and H bridge IGBT module are coupled together, and in order to reduce stray inductance, is set to the composite laminate busbar, be arranged in direct current capacitor and IGBT module directly over;
Liquid cooling heat radiator plays thermolysis, be the two independent water route, the IGBT module is turned on and off the most of heat that produces in the process shed by the water route, for ease of the cascade of chain link intermodule, the entery and delivery port of liquid cooling heat radiator designs on the same side of radiator;
The effect of discharge circuit is for direct current capacitor provides overvoltage protection, is the direct current capacitor discharge when promptly and normally withdrawing from; Discharge circuit comprises that the discharge IGBT module connects with discharge resistance, after DC bus-bar voltage surpasses the threshold value of adjusting, the conducting of discharge IGBT module, discharge to dc capacitor by discharge resistance, the discharge IGBT module is installed in the back side of liquid cooling heat radiator, discharge resistance is arranged on the below of liquid cooling heat radiator, is connected with liquid cooling heat radiator by noninductive composite bus bar exit;
The effect of bypass circuit is that the link units for whole high-power converter provides protection, and when link units was normally moved, the H bridge circuit was devoted oneself to work, and bypass circuit is out of service; When the inner generation of link units specific fault, signal reporting is given master controller, and master controller is given an order through judging, blocks the H bridge circuit, and the while bypass circuit is open-minded, and output current is transferred to bypass segment, thereby makes the fault chain link withdraw from; Bypass elements is selected the one pole mechanical switch for use, is placed on the below of liquid cooling heat radiator, links to each other with liquid cooling heat radiator by exchanging output row exit, exchanges output row and also is connected with the adjacent link unit;
Cell controller is responsible for accepting and carrying out the order that master controller issues; the state of high-power converter inside is uploaded to master controller; high-power converter is controlled, monitored and protects, and cell controller and drive circuitry arrangement are in the outside of high-power converter.
2. high-power converter as claimed in claim 1, it is characterized in that the structure that direct current capacitor adopts the opposite sex to arrange: the metal film capacitor of the long service life that the many groups of direct current capacitor employing are installed in parallel, and adopting the polarity of heteropolarity layout-capacitor is positive and negative interlaced arrangement, and the IGBT with H bridge circuit brachium pontis links to each other by noninductive composite laminate busbar; The IGBT of H bridge circuit brachium pontis adopts the parallel connection of many IGBT modules, and be installed on the liquid cooling heat radiator, two left and right sides brachium pontis of H bridge circuit are positioned at a side of direct current capacitor, and the output of H bridge circuit links to each other with bypass circuit by exchanging output row, and links to each other with the adjacent link unit respectively; Drive circuit and absorption electric capacity are positioned at the top of IGBT, are to reduce lead-in inductance, and drive circuit is directly installed on IGBT module top; Liquid cooling heat radiator is positioned at the below of IGBT; For making things convenient for the cascade between the module, the entery and delivery port Position Design of liquid cooling heat radiator is on the same side of liquid cooling heat radiator; The discharge IGBT module arrangement is at the back side of liquid cooling heat radiator, and radiator below placement unit controller, getting can power supply, discharge resistance and bypass circuit.
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| CN201010624224.1A CN102163926B (en) | 2010-12-31 | 2010-12-31 | High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules |
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| CN201010624224.1A CN102163926B (en) | 2010-12-31 | 2010-12-31 | High-power converter based on parallel IGBT (Insulated Gate Bipolar Transistor) modules |
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| CN102163926B CN102163926B (en) | 2014-08-27 |
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| CN (1) | CN102163926B (en) |
Cited By (18)
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|---|---|---|---|---|
| CN102412703A (en) * | 2011-11-18 | 2012-04-11 | 广东明阳龙源电力电子有限公司 | Flow equalizing device for current transformer of wind-driven generator |
| CN103107724A (en) * | 2013-01-29 | 2013-05-15 | 上海电气集团股份有限公司 | Modularized structure of three-level converter |
| CN103138542A (en) * | 2011-11-30 | 2013-06-05 | 永济新时速电机电器有限责任公司 | Four-quadrant chopping power assembly and converter cabinet |
| CN103138601A (en) * | 2011-11-30 | 2013-06-05 | 永济新时速电机电器有限责任公司 | Four-quadrant power component and conversion cabinet |
| CN103326366A (en) * | 2013-06-28 | 2013-09-25 | 中国西电电气股份有限公司 | Three-single-phase-three-wire-system parallel APF/SVG device |
| CN103381122A (en) * | 2013-06-27 | 2013-11-06 | 浙江联宜电机股份有限公司 | Novel adjusting and driving circuit for seat and backrest of wheelchair |
| CN103633820A (en) * | 2013-11-28 | 2014-03-12 | 电子科技大学 | IGBT (insulated gate bipolar transistor) parallel current sharing circuit |
| CN104426403A (en) * | 2013-09-09 | 2015-03-18 | 南京南瑞继保电气有限公司 | Module unit suitable for high-capacity modularized multi-level voltage source converter |
| CN104701096A (en) * | 2014-12-29 | 2015-06-10 | 国家电网公司 | Direct current breaker bridge type module |
| CN106301005A (en) * | 2016-08-26 | 2017-01-04 | 思源清能电气电子有限公司 | The high-power chain link module of SVG based on blocking framework |
| CN106712479A (en) * | 2015-11-12 | 2017-05-24 | 艾默生网络能源有限公司 | Power module configuration method, device and converter device |
| CN106849828A (en) * | 2017-03-27 | 2017-06-13 | 北京精密机电控制设备研究所 | A kind of MOSFET parallel current-equalizing circuits based on fault diagnosis |
| CN109067200A (en) * | 2018-10-11 | 2018-12-21 | 西安埃克森电源有限公司 | A kind of DC master row design device |
| CN110971137A (en) * | 2019-12-18 | 2020-04-07 | 阳光电源股份有限公司 | Inversion module |
| CN111262452A (en) * | 2018-11-30 | 2020-06-09 | 特科－西屋发动机公司 | High frequency medium voltage drive system for high speed machine applications |
| CN112490003A (en) * | 2020-12-04 | 2021-03-12 | 中车永济电机有限公司 | Simplified support capacitor assembly suitable for electric locomotive converter |
| CN113015417A (en) * | 2021-03-12 | 2021-06-22 | 长城超云(北京)科技有限公司 | Novel liquid cooling modularization frame power |
| WO2022257294A1 (en) * | 2021-06-11 | 2022-12-15 | 精进电动科技股份有限公司 | Parallel-connected dual module motor controller drive structure, and motor controller |
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Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412703A (en) * | 2011-11-18 | 2012-04-11 | 广东明阳龙源电力电子有限公司 | Flow equalizing device for current transformer of wind-driven generator |
| CN103138542B (en) * | 2011-11-30 | 2016-08-10 | 永济新时速电机电器有限责任公司 | Four-quadrant chopped power assembly and converter cabinet |
| CN103138542A (en) * | 2011-11-30 | 2013-06-05 | 永济新时速电机电器有限责任公司 | Four-quadrant chopping power assembly and converter cabinet |
| CN103138601A (en) * | 2011-11-30 | 2013-06-05 | 永济新时速电机电器有限责任公司 | Four-quadrant power component and conversion cabinet |
| CN103138601B (en) * | 2011-11-30 | 2015-06-03 | 永济新时速电机电器有限责任公司 | Four-quadrant power component and conversion cabinet |
| CN103107724A (en) * | 2013-01-29 | 2013-05-15 | 上海电气集团股份有限公司 | Modularized structure of three-level converter |
| CN103381122A (en) * | 2013-06-27 | 2013-11-06 | 浙江联宜电机股份有限公司 | Novel adjusting and driving circuit for seat and backrest of wheelchair |
| CN103326366A (en) * | 2013-06-28 | 2013-09-25 | 中国西电电气股份有限公司 | Three-single-phase-three-wire-system parallel APF/SVG device |
| CN104426403B (en) * | 2013-09-09 | 2017-05-17 | 南京南瑞继保电气有限公司 | Module unit suitable for high-capacity modularized multi-level voltage source converter |
| CN104426403A (en) * | 2013-09-09 | 2015-03-18 | 南京南瑞继保电气有限公司 | Module unit suitable for high-capacity modularized multi-level voltage source converter |
| CN103633820B (en) * | 2013-11-28 | 2017-01-18 | 电子科技大学 | IGBT (insulated gate bipolar transistor) parallel current sharing circuit |
| CN103633820A (en) * | 2013-11-28 | 2014-03-12 | 电子科技大学 | IGBT (insulated gate bipolar transistor) parallel current sharing circuit |
| CN104701096A (en) * | 2014-12-29 | 2015-06-10 | 国家电网公司 | Direct current breaker bridge type module |
| CN104701096B (en) * | 2014-12-29 | 2018-03-16 | 国家电网公司 | A kind of dc circuit breaker bridge-type module |
| CN106712479B (en) * | 2015-11-12 | 2019-03-05 | 维谛技术有限公司 | A kind of power module configuration method, device and converter equipment |
| CN106712479A (en) * | 2015-11-12 | 2017-05-24 | 艾默生网络能源有限公司 | Power module configuration method, device and converter device |
| CN106301005A (en) * | 2016-08-26 | 2017-01-04 | 思源清能电气电子有限公司 | The high-power chain link module of SVG based on blocking framework |
| CN106849828A (en) * | 2017-03-27 | 2017-06-13 | 北京精密机电控制设备研究所 | A kind of MOSFET parallel current-equalizing circuits based on fault diagnosis |
| CN109067200A (en) * | 2018-10-11 | 2018-12-21 | 西安埃克森电源有限公司 | A kind of DC master row design device |
| CN111262452A (en) * | 2018-11-30 | 2020-06-09 | 特科－西屋发动机公司 | High frequency medium voltage drive system for high speed machine applications |
| CN110971137A (en) * | 2019-12-18 | 2020-04-07 | 阳光电源股份有限公司 | Inversion module |
| CN112490003A (en) * | 2020-12-04 | 2021-03-12 | 中车永济电机有限公司 | Simplified support capacitor assembly suitable for electric locomotive converter |
| CN113015417A (en) * | 2021-03-12 | 2021-06-22 | 长城超云(北京)科技有限公司 | Novel liquid cooling modularization frame power |
| CN113015417B (en) * | 2021-03-12 | 2022-12-20 | 长城超云(北京)科技有限公司 | Novel liquid cooling modularization frame power |
| WO2022257294A1 (en) * | 2021-06-11 | 2022-12-15 | 精进电动科技股份有限公司 | Parallel-connected dual module motor controller drive structure, and motor controller |
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