CN107911034A - A kind of tri-level inversion power module of marine converter - Google Patents
A kind of tri-level inversion power module of marine converter Download PDFInfo
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- CN107911034A CN107911034A CN201711435254.6A CN201711435254A CN107911034A CN 107911034 A CN107911034 A CN 107911034A CN 201711435254 A CN201711435254 A CN 201711435254A CN 107911034 A CN107911034 A CN 107911034A
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 239000012212 insulator Substances 0.000 claims abstract description 6
- 238000010521 absorption reaction Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 230000003071 parasitic effect Effects 0.000 abstract description 2
- 239000000306 component Substances 0.000 description 16
- 238000001816 cooling Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
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- 239000011810 insulating material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/12—Arrangements for reducing harmonics from AC input or output
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/20927—Liquid coolant without phase change
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a kind of tri-level inversion power module of marine converter, including module frame and the radiator being fixed on module frame, drive circuit board and one group of capacitance battle array using connection in series-parallel connection, the radiator front is provided with IGBT components, Power conversion board and current sensor are connected with IGBT components, the capacitance battle array and IGBT components folds busbar by piece layer and links together, insulated column is provided with the laminated bus bar, module frame is outer to be connected with output copper bar by insulator, light air plug and electric air plug are connected on the drive circuit board；The present invention reduces bridge arm outer layer device parasitic inductance by stack bus bar and optimised devices commutation circuit, reduces outer layer device shut-off overvoltage；Layer device overvoltage in bridge arm is reduced with reference to absorbing circuit, so as to improve power module semiconductor devices reliability of operation；This module is suitable for, vibration noise more demanding power electronic equipment more demanding to reliability, maintainability.
Description
Technical field
The invention belongs to power electronics field, and in particular to a kind of electric and electronic power module, is suitable for change peculiar to vessel
The frequency converter of frequency device or other occasions.
Background technology
Propulsion frequency converter peculiar to vessel is one of key equipment of Marine Synthesize Electric Propulsion System.
Electric and electronic power module is the core component of Ship Propeling frequency converter, can be realized and promoted by its various combination
The power expanding of frequency converter.
700-1200VDC voltage class low-voltage ship promotes frequency converter generally to use two-level inverter, output electricity at present
Press harmonic content it is larger, switching frequency is relatively low, and it is exceeded to be easy to cause motor oscillating noise objective, it is difficult to meet it is some to vibration make an uproar
The more demanding use occasion of sound.
Therefore become a kind of using tri-level inversion module to select, and traditional three-level inverter is used due to each bridge arm
Four IGBT, are limited by semiconductor devices, it is suppressed that outer layer device turns off overvoltage, is easy for causing interior layer device overvoltage, instead
It is as the same, it is difficult to reduce commutation over-voltage during the shut-off of bridge arm inside and outside layer semiconductor devices at the same time so that the voltage margin of device
It is smaller, cause security, reliability that equipment is run to reduce.
The content of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of tri-level inversion power module of marine converter, possess
Higher propulsion security, reliability and maintainability, possesses more low harmonic content, can meet the application of higher switching frequency, fits
For the occasion more demanding to vibration noise.
The technical solution adopted by the present invention to solve the technical problems is：A kind of tri-level inversion power of marine converter
Module, including module frame and the radiator, drive circuit board and one group that are fixed on module frame are connected using connection in series-parallel
Capacitance battle array, the radiator front is provided with IGBT components, Power conversion board and current sense is connected with IGBT components
Device, the capacitance battle array and IGBT components fold busbar by piece layer and link together, and are provided with the laminated bus bar absolutely
Edge column, module frame is outer to be connected with output copper bar by insulator, and the drive circuit board is installed on IGBT components, driving
Light air plug 9 and electric air plug 10 are connected on circuit board, driving signal and fault signal is connected by a light air plug 9 with outside
Connect, the measuring signal such as inside modules voltage and current passes through an electric air plug 10 and external connection；The IGBT components are by IGBT
Pipe T1~T12, diode D1~D6 and capacitance C1, capacitance C2 compositions；Wherein IGBT pipes T1~T4 is composed in series the first IGBT groups,
The first diode group being in series by diode D1 and diode D2, first diode group one end are parallel with first IGBT groups
It is connected between IGBT pipe T1 and IGBT pipes T2, the other end is connected between IGBT pipe T3 and IGBT pipes T4；IGBT pipes T5~T8
The 2nd IGBT groups are composed in series, the second diode being in series by diode D3 and diode D4 is parallel with the 2nd IGBT groups
Group, second diode group one end are connected between IGBT pipe T5 and IGBT pipes T6, and the other end is connected to IGBT pipes T7 and IGBT pipe
Between T8；IGBT pipes T9~T12 is composed in series the 3rd IGBT groups, is parallel with the 3rd IGBT groups by diode D5 and diode D6
The 3rd diode group being in series, the 3rd diode group one end are connected between IGBT pipe T9 and IGBT pipes T10, and the other end connects
It is connected between IGBT pipe T11 and IGBT pipes T12；Three IGBT groups are connected in parallel on dc bus, the diode D1,
The cathode of D3, D5 connect, and draw between the IGBT pipes T2 and IGBT pipe T3 and are exported as A cross streams, IGBT pipes T6 and IGBT
Draw between pipe T7 and exported as B cross streams, draw between IGBT pipe T10 and IGBT pipes T11 and exported as C cross streams, A, B, C
Three-phase alternating current output terminal is connected to output copper bar by being flexible coupling；The capacitance C1 and IGBT pipes T1, the both ends of diode D1
The first absorption circuit is formed, the both ends of the capacitance C2 and diode D2, IGBT pipe T4 form the second absorption circuit.
A kind of tri-level inversion power module of marine converter, its first absorption circuit and the second absorption circuit
Design can use purely capacitive absorbing circuit, can also be according to condition using absorbing circuits such as RC, RCD types.
A kind of tri-level inversion power module of marine converter, the bottom of its module frame side are provided with cunning
Rail, the positive bottom of module frame are provided with two handles, lifting lug are provided with the left of module frame.
A kind of tri-level inversion power module of marine converter, its radiator are dissipated using rectangular copper cooled plate
Heat, its water inlet/water outlet mouthpiece use DN16 pagoda connectors, and the first from left right side is arranged symmetrically.
Further, the bosh of the water-cooling plate uses symmetric design, to ensure each bridge arm IGBT baseplate temps
Uniformity.
A kind of tri-level inversion power module of marine converter, its module frame right side are provided with voltage sensor
Device assembly, module frame bottom have been provided with the insulation board for the effect of being dielectrically separated from, and reduce Ground leakage current, suitable for intermodule
Connection in series-parallel connects.
The beneficial effects of the invention are as follows：
1st, by optimizing dc-link capacitance battle array, IGBT device commutation circuit arrangement, using four layer of three level laminated bus bar, reduce
Outer layer IGBT turns off overvoltage；At the same time by interior layer device change of current path, increasing absorbing circuit, reduce internal layer IGBT shut-offs
Overvoltage, so as to add semiconductor devices reliability of operation, improves the safety and reliability of equipment operation；
2, harmonic wave of output voltage content is low, and switching frequency is higher, and the high-frequency noise produced on load motor is substantially better than with electricity
Press two level block of grade；
3, module bottom is isolated using insulating materials, and leakage current is low, is adapted to multiple block combiners into big-power transducer；
4, it is high using fine copper water-cooling, good cooling results, reliability；
5, bottom is fixed using slide, facilitates repair demolition, and maintainability is good.
Brief description of the drawings
Fig. 1 is the front view of the present invention；
Fig. 2 is the top view of the present invention；
Fig. 3 is the left side view of the present invention；
Fig. 4 is the right side view of the present invention；
Fig. 5 is the layout drawing of capacitance battle array of the present invention；
Fig. 6 is the layout drawing of IGBT of the present invention；
Fig. 7 is the main circuit and commutation circuit schematic diagram of the present invention.
Each reference numeral is：1-capacitance battle array, 2-IGBT components, 3-laminated bus bar, 4-module frame, 5-insulation board,
6-be flexible coupling, 7-drive circuit board, 8-Power conversion board, 9-light air plug, 10-electricity air plug, 11-current sensor,
12-voltage sensor device assembly, 13-pagoda connector, 14-lifting lug, 15-insulated column, 16-radiator, 17-insulator,
18-handle.
Embodiment
The present invention is further described with reference to the accompanying drawings and examples.
As shown in Figures 1 to 4, as the embodiment of the present invention, there is provided a kind of low-voltage harmonic content, low-vibration noise
High-power electric and electronic power module, to meet the reliability of Ship Propeling, maintainability, it includes module frame 4 and passes through
Radiator 16, drive circuit board 7 and the one group of capacitance battle array 1 connected using connection in series-parallel that screw is fixed on module frame 4, wherein
For radiator 16 using the heat dissipation of rectangular copper cooled plate, its water inlet/water outlet mouthpiece uses DN16 pagodas connector 13, and a first from left is right symmetrical
Arrangement, the bosh of water-cooling plate use symmetric design, ensure each bridge arm IGBT baseplate temp uniformity；The heat dissipation
16 front of device is provided with IGBT components 2, and Power conversion board 8 and current sensor 11, the capacitance are connected with IGBT components 2
Battle array 1 is linked together with IGBT components 2 by the laminated bus bar 3 of the low stray inductance of one piece of four layers of L-type, forms inverted power module
Agent structure, 3 structure of laminated bus bar between IGBT components 2 and capacitance battle array reduces the commutation circuit during IGBT device switch
Area, so as to eliminate absorbing circuit；Insulated column 15 is provided with the laminated bus bar 3, passes through insulator outside module frame 4
17 are connected with output copper bar, and the three-phase alternating current of inverted power module is exported, and also meet symmetric design, and module frame 4 is right
Side is provided with voltage sensor device assembly 12, and 4 bottom of module frame is provided with insulation board 5, reduces Ground leakage current, suitable for module
Between connection in series-parallel connection；The capacitance battle array 1 and IGBT components 2 folds busbar 3 by piece layer and links together, the stacking
Insulated column 15 is provided with busbar 3, module frame 4 is outer to be connected with output copper bar, the drive circuit board 7 by insulator 17
Be installed on by screw on IGBT components 2, be connected to light air plug 9 and electric air plug 10 on drive circuit board 7, drive signal and
Fault-signal passes through an electric air plug 10 by a light air plug 9 and the measuring signal such as external connection, inside modules voltage and current
With external connection.
As shown in Figure 5, Figure 6, the IGBT components 2 include IGBT pipes T1~T12, diode D1~D6 and capacitance C1,
Capacitance C2；Wherein IGBT pipes T1~T4 is composed in series the first IGBT groups, is parallel with the first IGBT groups by diode D1 and two poles
The first diode group that pipe D2 is in series, first diode group one end is connected between IGBT pipe T1 and IGBT pipes T2, another
End is connected between IGBT pipe T3 and IGBT pipes T4；IGBT pipes T5~T8 is composed in series the 2nd IGBT groups, in the 2nd IGBT groups simultaneously
The second diode group being in series by diode D3 and diode D4 is associated with, second diode group one end is connected to IGBT pipes T5
Between IGBT pipes T6, the other end is connected between IGBT pipe T7 and IGBT pipes T8；IGBT pipes T9~T12 is composed in series the 3rd
IGBT groups, are parallel with the 3rd diode group being in series by diode D5 and diode D6, the three or two pole in the 3rd IGBT groups
Pipe group one end is connected between IGBT pipe T9 and IGBT pipes T10, and the other end is connected between IGBT pipe T11 and IGBT pipes T12；Institute
The three IGBT groups stated are connected in parallel on dc bus, the cathode connection of described diode D1, D3, D5, direct current of the invention input
Designed for symmetrical formula, mirror symmetry can also ensure that input direct-current positive and negative electrode direction is consistent when installing, the IGBT pipes T2
Draw between IGBT pipes T3 and exported as A cross streams, draw between IGBT pipe T6 and IGBT pipes T7 and exported as B cross streams,
Draw between IGBT pipe T10 and IGBT pipes T11 and exported as C cross streams, A, B, C three-phase alternating current output terminal pass through 6 companies that are flexible coupling
Output copper bar is connected to, also meets symmetric design；The capacitance C1 and IGBT pipes T1, the both ends of diode D1 form first and absorb
Circuit, the both ends of the capacitance C2 and diode D2, IGBT pipe T4 form the second absorption circuit；First absorption circuit
Purely capacitive absorbing circuit can be used with the design of the second absorption circuit, electricity can also be absorbed using RC, RCD type etc. according to condition
Road.
The present invention passes through IGBT pipes T4, the diode D2 on IGBT components（IGBT pipes T1, diode D1）Both ends increase
Absorbing circuit, can absorb dc-link capacitance battle array and diode D1, IGBT pipe T2, IGBT pipe T3, IGBT pipe T4（Diode
D1, IGBT pipe T1, IGBT pipe T2, IGBT pipe T3）The overvoltage that big commutation circuit inductance produces, and big commutation circuit device terminal
Due to designing in a plane, designed in conjunction with noninductive stack bus bar, reduce the stray inductance of commutation circuit as far as possible, subtract
The small shut-off overvoltage of internal layer IGBT pipes, improves the voltage margin of semiconductor power device, and add equipment operation can
By property.The module can meet vertically-mounted requirement, also meet to be transversely mounted requirement by changing fixed form.
The schematic diagram of two of which typical case's commutation circuit is illustrated in figure 7, Absorption Capacitance is identical with capacitance battle array on circuit.
Make the device terminal that small commutation circuit electric current flows through in design in a change of current plane, ensure each small commutation circuit electric current
The device terminal shortest path flowed through, between device terminal connection use four layer laminate busbars, ensure IGBT pipe T1, IGBT pipes T4 passes
Commutation circuit area is minimum during disconnected, so as to reduce the parasitism of commutation circuit during the shut-off of IGBT pipe T1, IGBT pipe T4 devices
Inductance, from Δ V=Ldi/dt, can reduce the overvoltage that outer layer IGBT device turns off device.
Using same principle, DC capacitor structure type is replaced, using different type semiconductor devices, while optimizes it just
The commutation circuit of anode and outer layer IGBT pipe change of current terminals, can effectively reduce the shut-off overvoltage IGBT components and electricity of outer layer device
Laminated bus bar structure between Rong Zhen reduces the commutation circuit area during IGBT device switch, so as to eliminate absorbing circuit.
Use with upper type, while reduce the shut-off overvoltage of inside and outside layer IGBT device, improve semiconductor power device
Voltage margin, add equipment operation safety and reliability.In this way can also be by changing capacitance positive and negative electrode
Arrangement mode, according to IGBT device terminal carry out various combination, make circuit stray inductance parameter optimization, reach reduce device close
The effect of disconnected overvoltage, so as to improve changing during equipment reliability of operation laminated bus bar structure reduces IGBT device switch
Loop area is flowed, optimizes absorbing circuit.
Further, the bottom of 4 side of module frame is configured with slide, is mountable on the slide of cabinet, module
4 positive bottom of frame is provided with two handles 18, and the left side of module frame 4 is provided with lifting lug 14；When needing repairing, front is removed
Block, easily can be skidded off malfunctioning module by bottom handle 18 and slide, and module bottom is provided with insulation board and plays insulation
Buffer action, reduces Ground leakage current, and the connection in series-parallel suitable for intermodule connects.
This inverter module is the important component of marine converter, main circuit be three-phase tri-level inverter bridge, it can be achieved that
The DC-AC conversion of electric energy.
It is of the invention compared with existing inverter module, pass through stack bus bar and optimised devices commutation circuit and reduce bridge arm outer layer
Device parasitic inductance, reduces outer layer device shut-off overvoltage；Layer device overvoltage in bridge arm is reduced with reference to absorbing circuit, so as to carry
High power module semiconductor devices reliability of operation；This module can realize higher switching frequency, and harmonic content is low, cooling effect
Fruit is good, and maintenanceability is good, suitable for more demanding to reliability, maintainability, the more demanding power electronic equipment of vibration noise.
The above-described embodiments merely illustrate the principles and effects of the present invention, and the embodiment that part uses, for
For those of ordinary skill in the art, without departing from the concept of the premise of the invention, can also make it is some deformation and
Improve, these belong to protection scope of the present invention.
Claims (6)
- A kind of 1. tri-level inversion power module of marine converter, it is characterised in that：Including module frame（4）And it is fixed on Module frame（4）On radiator（16）, drive circuit board（7）With one group of capacitance battle array connected using connection in series-parallel（1）, it is described Radiator（16）Front is provided with IGBT components（2）, IGBT components（2）On be connected with Power conversion board（8）And current sensor （11）, the capacitance battle array（1）With IGBT components（2）Busbar is folded by piece layer（3）Link together, the laminated bus bar （3）On be provided with insulated column（15）, module frame（4）Pass through insulator outside（17）It is connected with output copper bar, driving electricity Road plate（7）Installed in IGBT components（2）On, drive circuit board（7）On be connected to light air plug（9）With electric air plug（10）；Institute The IGBT components stated（2）It is made of IGBT pipes T1~T12, diode D1~D6 and capacitance C1, capacitance C2；Wherein IGBT pipes T1~ T4 is composed in series the first IGBT groups, and the first diode group being in series by diode D1, D2 is parallel with the first IGBT groups, the One diode group one end is connected between IGBT pipes T1, T2, and the other end is connected between IGBT pipes T3, T4；IGBT pipes T5~T8 The 2nd IGBT groups are composed in series, are parallel with the second diode group being in series by diode D3, D4 in the 2nd IGBT groups, second Diode group one end is connected between IGBT pipes T5, T6, and the other end is connected between IGBT pipes T7, T8；IGBT pipes T9~T12 goes here and there Connection the 3rd IGBT groups of composition, are parallel with the 3rd diode group being in series by diode D5, D6 in the 3rd IGBT groups, and the three or two Pole pipe group one end is connected between IGBT pipes T9, T10, and the other end is connected between IGBT pipes T11, T12；Three IGBT Group is connected in parallel on dc bus, and the cathode connection of described diode D1, D3, D5, draw between described IGBT pipes T2, T3 and be used as A Cross streams export, and draw between IGBT pipes T6, T7 and are exported as B cross streams, draw between IGBT pipes T10, T11 and intersect as C Stream output, A, B, C three-phase alternating current output terminal are by being flexible coupling（6）It is connected to output copper bar；The capacitance C1 and IGBT pipes T1, The both ends of diode D1 form the first absorption circuit, and the both ends of the capacitance C2 and diode D2, IGBT pipe T4 form second Absorption circuit.
- 2. the tri-level inversion power module of a kind of marine converter according to claim 1, it is characterised in that described First absorption circuit and the second absorption circuit use purely capacitive absorbing circuit or RC/RCD type absorbing circuits.
- 3. the tri-level inversion power module of a kind of marine converter according to claim 2, it is characterised in that described Module frame（4）The bottom of side is provided with slide, module frame（4）Positive bottom is provided with two handles（18）, module Frame（4）Left side is provided with lifting lug（14）.
- 4. the tri-level inversion power module of a kind of marine converter according to claim 2, it is characterised in that described Radiator（16）Radiated using rectangular copper cooled plate, its water inlet/water outlet mouthpiece uses DN16 pagoda connectors（16）, the first from left right side It is arranged symmetrically.
- A kind of 5. tri-level inversion power module of marine converter according to claim 4, it is characterised in that the water The bosh of cold heat sink uses symmetric design.
- 6. the tri-level inversion power module of a kind of marine converter according to claim 2, it is characterised in that described Module frame（4）Right side is provided with voltage sensor device assembly（12）, module frame（4）Bottom has been provided with the effect of being dielectrically separated from Insulation board（5）.
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| CN201711435254.6A CN107911034A (en) | 2017-12-26 | 2017-12-26 | A kind of tri-level inversion power module of marine converter |
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| CN201711435254.6A CN107911034A (en) | 2017-12-26 | 2017-12-26 | A kind of tri-level inversion power module of marine converter |
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Cited By (11)
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| CN109274282A (en) * | 2018-11-27 | 2019-01-25 | 胡聪权 | Split-type parallel resonant inverter composed of double T-type topology inverter bridge |
| CN109466735A (en) * | 2018-10-09 | 2019-03-15 | 武汉船用电力推进装置研究所（中国船舶重工集团公司第七二研究所） | A kind of permanent magnet synchronous motor propulsion system |
| CN109687724A (en) * | 2019-01-01 | 2019-04-26 | 武汉船用电力推进装置研究所（中国船舶重工集团公司第七一二研究所） | A kind of water-cooling electric electron power module |
| CN109995247A (en) * | 2019-05-13 | 2019-07-09 | 荣信汇科电气技术有限责任公司 | Split type compact tri-level inversion cellular construction based on compression joint type IEGT |
| CN110572010A (en) * | 2019-10-12 | 2019-12-13 | 江苏大全凯帆电器股份有限公司 | A sealed integrated power unit module |
| CN111404360A (en) * | 2020-05-07 | 2020-07-10 | 深圳市智鼎驱动技术有限公司 | A three-level inverter structure |
| CN114244145A (en) * | 2021-11-30 | 2022-03-25 | 武汉船用电力推进装置研究所（中国船舶重工集团公司第七一二研究所） | Integrated form power module |
| CN116094343A (en) * | 2022-12-29 | 2023-05-09 | 中车永济电机有限公司 | Integrated single-phase power unit |
| CN117595694A (en) * | 2023-11-23 | 2024-02-23 | 武汉船用电力推进装置研究所(中国船舶集团有限公司第七一二研究所) | A hybrid ANPC three-level inverter unit and inverter |
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| CN109466735A (en) * | 2018-10-09 | 2019-03-15 | 武汉船用电力推进装置研究所（中国船舶重工集团公司第七二研究所） | A kind of permanent magnet synchronous motor propulsion system |
| CN109274282B (en) * | 2018-11-27 | 2024-05-28 | 胡聪权 | Split type parallel resonance inverter formed by double-T-shaped topological inversion bridge |
| CN109274282A (en) * | 2018-11-27 | 2019-01-25 | 胡聪权 | Split-type parallel resonant inverter composed of double T-type topology inverter bridge |
| CN109687724A (en) * | 2019-01-01 | 2019-04-26 | 武汉船用电力推进装置研究所（中国船舶重工集团公司第七一二研究所） | A kind of water-cooling electric electron power module |
| CN109995247A (en) * | 2019-05-13 | 2019-07-09 | 荣信汇科电气技术有限责任公司 | Split type compact tri-level inversion cellular construction based on compression joint type IEGT |
| CN110572010A (en) * | 2019-10-12 | 2019-12-13 | 江苏大全凯帆电器股份有限公司 | A sealed integrated power unit module |
| CN111404360A (en) * | 2020-05-07 | 2020-07-10 | 深圳市智鼎驱动技术有限公司 | A three-level inverter structure |
| CN114244145A (en) * | 2021-11-30 | 2022-03-25 | 武汉船用电力推进装置研究所（中国船舶重工集团公司第七一二研究所） | Integrated form power module |
| CN116094343A (en) * | 2022-12-29 | 2023-05-09 | 中车永济电机有限公司 | Integrated single-phase power unit |
| CN117674543A (en) * | 2023-10-30 | 2024-03-08 | 厦门科华数能科技有限公司 | A power component and converter |
| CN117595694A (en) * | 2023-11-23 | 2024-02-23 | 武汉船用电力推进装置研究所(中国船舶集团有限公司第七一二研究所) | A hybrid ANPC three-level inverter unit and inverter |
| CN119628399A (en) * | 2024-11-28 | 2025-03-14 | 武汉船用电力推进装置研究所(中国船舶集团有限公司第七一二研究所) | An Active Clamped Three-Level Inverter |
| CN119628399B (en) * | 2024-11-28 | 2025-11-07 | 武汉船用电力推进装置研究所(中国船舶集团有限公司第七一二研究所) | Active clamp three-level inverter |
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