CN112332682A - Laminated busbar structure layout of five-level active neutral point clamped H-bridge converter - Google Patents

Laminated busbar structure layout of five-level active neutral point clamped H-bridge converter Download PDF

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CN112332682A
CN112332682A CN202110013891.4A CN202110013891A CN112332682A CN 112332682 A CN112332682 A CN 112332682A CN 202110013891 A CN202110013891 A CN 202110013891A CN 112332682 A CN112332682 A CN 112332682A
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bridge arm
igbt
igbt group
capacitor
port
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CN112332682B (en
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肖飞
胡亮灯
辛子越
蒋林飞
吴文捷
任强
李伟
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Naval University of Engineering PLA
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/487—Neutral point clamped inverters

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  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The invention discloses a laminated busbar structure layout of a five-level active neutral point clamped H-bridge converter, which comprises a left half-bridge arm device, a right half-bridge arm device, a laminated busbar, an upper supporting capacitor, a lower supporting capacitor, a left bridge arm suspension capacitor and a right bridge arm suspension capacitor; the left half-bridge arm device and the right half-bridge arm device are the same in layout, the left half-bridge arm device is located on the right half portion of the laminated busbar, and the right half-bridge arm device is located on the left half portion of the laminated busbar; the reasonable device layout can effectively shorten the length of a commutation path, improve the compounding effect of a commutation loop and reduce the design difficulty of the laminated busbar; the good laminated busbar design can realize the sufficient composition of a current conversion path, reduce the stray inductance of a current conversion loop, greatly reduce the turn-off overvoltage of a power device, simplify an absorption circuit, reduce the cost, simultaneously enable the structure to be more compact, further improve the power density, enlarge the safe working area of the five-level converter and be beneficial to the long-term safe and stable operation of the five-level converter.

Description

Laminated busbar structure layout of five-level active neutral point clamped H-bridge converter
Technical Field
The invention belongs to the technical field of high-power electric energy conversion, and particularly relates to a laminated busbar structure layout of a five-level active neutral point clamped H-bridge converter.
Background
With the increasing progress of power electronic device technology, information and control technology, power electronic converter technology has been greatly developed and improved. At present, medium-high voltage and large-capacity power electronic converters are more and more widely related and applied, such as wind power converters, high-voltage direct current transmission converters, heavy-load locomotive traction converters, mining electric transmission converters, military mobile platform converters and the like, and become important directions for industrial development. The traditional two-level converter has the problems of limited voltage-resisting capability of power devices, voltage-sharing and the like in series connection of the devices, and is not suitable for medium-voltage large-capacity occasions. The five-level active neutral point clamped converter (5L-ANPC) is a multi-level topology, well solves the voltage withstanding problem of a switching device, and enables the application of the conventional power electronic device with a voltage level to be possible in medium and high voltage occasions, so that the five-level active neutral point clamped topology has a wide application prospect in the medium voltage field.
A frequency converter for driving a medium-voltage multiphase open winding motor adopts a multiphase H-bridge structure of a five-level active neutral point clamping topology, the main circuits of different H-bridge units are not coupled, power units are mutually independent, and the H-bridge circuit structure can be independently designed. The advantages and disadvantages of H-bridge power device layout and laminated busbar design directly relate to the overall performance of the converter. Compared with a traditional two-level converter, the five-level active neutral point clamped converter has more and more complex commutation loops and longer commutation path. When the power switch device acts, voltage spikes generated by stray inductance of a commutation loop of the power switch device are superposed at two ends of the power switch device, so that the voltage stress of the power switch device is increased and even possibly exceeds the withstand voltage range of the power switch device, and the power switch device is easily damaged. In addition, the stray inductance and the absorption capacitor form a resonant circuit, so that the power circuit is easy to oscillate, the system loss is increased, the turn-off transition process of the device is prolonged, and the safe operation of the device is not facilitated. In order to further improve the performance and reliability of the five-level active neutral point clamped converter, the layout of a power device and the design of a laminated busbar are very critical. The reasonable layout of the power devices can shorten the length of a commutation path, simplify a commutation loop and reduce the design difficulty of the laminated busbar; the good laminated busbar design can realize the sufficient composition of the commutation path, and the stray inductance of the commutation loop is reduced to the maximum extent. In addition, because of manufacturing and assembly errors, busbar self and capacitance and other factors, the stress of the power device is inevitable, and if the factors are not taken into consideration in the stages of power device layout and laminated busbar design, the power device is likely to bear excessive stress. In particular, the busbar of a five-level active neutral point clamped converter is generally large, and the number of power devices is larger than that of two levels, so that the risk is increased. In addition, the inner tube commutation path of the five-level converter is relatively long, so that large voltage and current margins are usually reserved in practical application, and the capacity of the power module cannot be fully applied. In order to improve the system reliability and fully utilize the safe working area of the IGBT, the device layout and the laminated busbar need to be designed accurately and reasonably on the basis of considering the five-level active neutral point clamped topological commutation path. The laminated busbar can realize high integration of a converter power device, and meanwhile, stray inductance of a converter circuit is greatly reduced through reasonable device layout and laminated busbar circuit composition, so that peak voltage born by the power device in a switching process is effectively reduced, the requirement of the power device on protection of an absorption circuit is reduced, and the utilization rate of the power device and the reliability and stability of operation are improved.
Disclosure of Invention
The invention aims to provide a laminated busbar structure layout of a five-level active neutral point clamped H-bridge converter, which can shorten the length of each half-bridge commutation path and simplify a commutation loop aiming at the defects of the technology.
In order to achieve the purpose, the invention designs a laminated busbar structure layout of a five-level active neutral point clamped H-bridge converter, wherein the laminated busbar structure layout comprises a left half-bridge arm device, a right half-bridge arm device, a laminated busbar and an upper support capacitor Cd1And a lower support capacitor Cd2Left bridge arm suspension capacitor Cf1And a right arm suspension capacitor Cf2(ii) a The left half-bridge arm device comprises a first IGBT group T1, a second IGBT group T2, a third IGBT group T3, a fourth IGBT group T4, a fifth IGBT group T5 and a sixth IGBT group T6, and each IGBT group comprises two independent IGBTs; the left half-bridge arm device and the right half-bridge arm device are the same in layout, the left half-bridge arm device is positioned on the right half part of the laminated busbar, and the right half-bridge arm device is positioned on the left half part of the laminated busbar;
the first IGBT group T1 is positioned at the upper right corner, two independent IGBTs in the assembly are arranged in series from right to left, the collector terminal interface of the right IGBT is positioned at the rightmost side, the emitter terminal interface of the left IGBT is positioned in the middle, and the interface of the series midpoint terminal is positioned at the leftmost side; the second IGBT group T2 is positioned below the first IGBT group T1, two independent IGBTs in the assembly are arranged in series from right to left, a collector terminal interface of the left IGBT is positioned at the rightmost side, an emitter terminal interface of the right IGBT is positioned in the middle, and an interface of a series midpoint terminal is positioned at the leftmost side; the third IGBT group T3 is positioned at the lower right corner, two independent IGBTs in the assembly are arranged in series from right to left, the collector terminal interface of the IGBT on the left side is positioned at the rightmost side, the emitter terminal interface of the IGBT on the right side is positioned in the middle, and the interface of the series midpoint terminal is positioned at the leftmost side; the fourth IGBT group T4 is positioned above the third IGBT group T3, two independent IGBTs in the assembly are arranged in series from right to left, a collector terminal interface of the left IGBT is positioned at the rightmost side, an emitter terminal interface of the right IGBT is positioned in the middle, and an interface of a series midpoint terminal is positioned at the leftmost side; the fifth IGBT group T5 is positioned in the middle and is positioned below the second IGBT group T2, two independent IGBTs in the assembly are arranged in series from right to left, the collector terminal interface of the left IGBT is positioned at the rightmost side, the emitter terminal interface of the right IGBT is positioned in the middle, and the interface of the series midpoint terminal is positioned at the leftmost side; the sixth IGBT group T6 is located in the middle and below the fifth IGBT group T5, two independent IGBTs in the assembly are arranged in series from right to left, the left IGBT collector terminal interface is located at the rightmost side, the right IGBT emitter terminal interface is located in the middle, and the interface of the series midpoint terminal is located at the leftmost side.
Further, the laminated busbar comprises four layers, wherein the first layer comprises a module positive busbar P, a module negative busbar N and a midline point busbar O; the second layer comprises a left bridge arm suspension capacitor positive bus bar 2-1, a left bridge arm suspension capacitor negative bus bar 2-2, a right bridge arm suspension capacitor positive bus bar 2-3 and a right bridge arm suspension capacitor negative bus bar 2-4; the third layer comprises a left upper connecting bus bar 3-1, a left lower connecting bus bar 3-2, a right upper connecting bus bar 3-3 and a right lower connecting bus bar 3-4; the fourth layer comprises a left bridge arm alternating current output bus bar a and a right bridge arm alternating current output bus bar b.
Further, a left port of the second IGBT group T2 passes through the left arm suspension capacitor positive bus bar 2-1 and the left arm suspension capacitor C on the second layerf1Connecting the positive electrode; the left port of the third IGBT group T3 passes through the left bridge arm suspension capacitor negative bus bar 2-2 and the left bridge arm suspension capacitor C of the second layerf1Connecting the negative electrodes; the middle port of the first IGBT group T1 is respectively connected with the rightmost port of the second IGBT group T2 and the rightmost port of the fifth IGBT group T5 through the upper left connecting bus bar 3-1 of the third layer; the middle port of the sixth IGBT group T6 is respectively connected with the middle port of the third IGBT group T3 and the rightmost port of the fourth IGBT group T4 through a lower left connecting busbar 3-2 of the third layer; the middle port of the second IGBT group T2 is connected to the rightmost port of the third IGBT group T3 through the left arm ac output bus a of the fourth layer.
Further, the left bridge arm suspension capacitor Cf1And a right arm suspension capacitor Cf2On the upper support capacitor Cd1And a lower support capacitor Cd2While, the left bridge arm suspension capacitor Cf1And a right bridge arm suspension capacitor Cf2Upper support capacitor Cd1And a lower support capacitor Cd2And the bridge circuit is positioned between the left half-bridge arm device and the right half-bridge arm device.
Further, the upper support capacitor Cd1The positive electrode of the first layer of the module is respectively connected with the rightmost port and the seventh port of the first IGBT group T1 through the module positive busbar P of the first layerThe rightmost port of the IGBT group T7 is connected; the upper support capacitor Cd1The negative electrode is respectively connected with the lower support capacitor C through the neutral point bus bar O of the first layerd2The positive electrode, the middle port of the fifth IGBT group T5, the rightmost port of the sixth IGBT group T6, the middle port of the eleventh IGBT group T22, and the rightmost port of the twelfth IGBT group T12 are connected; the lower support capacitor Cd2And the negative electrode is respectively connected with the middle port of the fourth IGBT group T4 and the middle port of the tenth IGBT group T10 through the module negative busbar N of the first layer.
Compared with the prior art, the invention has the following advantages: according to the laminated busbar structure layout of the five-level active neutral point clamped H-bridge converter, the length of a commutation path can be effectively shortened through reasonable device layout, the composite effect of the commutation loop is improved, and the design difficulty of the laminated busbar is reduced; the good laminated busbar design can realize the sufficient composition of a current conversion path, reduce the stray inductance of a current conversion loop, greatly reduce the turn-off overvoltage of a power device, simplify an absorption circuit, reduce the cost, simultaneously enable the structure to be more compact, further improve the power density, enlarge the safe working area of the five-level converter and be beneficial to the long-term safe and stable operation of the five-level converter.
Drawings
FIG. 1 is a schematic diagram of an H-bridge five-level circuit;
fig. 2 is a schematic diagram of a laminated busbar structure of a five-level active midpoint clamping H-bridge converter according to the present invention;
FIG. 3 is a schematic view of a first layer of a laminated busbar according to the present invention;
FIG. 4 is a schematic diagram of a second layer of the laminated busbar according to the present invention;
FIG. 5 is a schematic view of a third layer of the laminated busbar of the present invention;
fig. 6 is a schematic view of a fourth layer of the laminated busbar according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the figures and the specific examples.
As shown in fig. 1 and 2, a laminated busbar structure layout of a five-level active midpoint clamping H-bridge converter includes a left halfBridge arm device, right half bridge arm device, laminated busbar and upper support capacitor Cd1And a lower support capacitor Cd2Left bridge arm suspension capacitor Cf1And a right arm suspension capacitor Cf2. The left half-bridge arm device comprises a first IGBT group T1, a second IGBT group T2, a third IGBT group T3, a fourth IGBT group T4, a fifth IGBT group T5 and a sixth IGBT group T6, wherein each IGBT group comprises two independent IGBTs, and the number of the IGBT groups is 12, namely S1-S12; similarly, the right half bridge arm device comprises a seventh IGBT group T7, an eighth IGBT group T8, a ninth IGBT group T9, a tenth IGBT group T10, an eleventh IGBT group T11 and a twelfth IGBT group T12, and each IGBT group comprises two independent IGBTs and 12 IGBTs in total, namely S13-S24. The left half-bridge arm device and the right half-bridge arm device are identical in layout, the left half-bridge arm device is located on the right half portion of the laminated busbar, the right half-bridge arm device is located on the left half portion of the laminated busbar, and the left bridge arm suspension capacitor C is arranged on the left half-bridge armf1And a right arm suspension capacitor Cf2On the upper support capacitor Cd1And a lower support capacitor Cd2While, the left bridge arm suspension capacitor Cf1And a right bridge arm suspension capacitor Cf2Upper support capacitor Cd1And a lower support capacitor Cd2And the bridge circuit is positioned between the left half-bridge arm device and the right half-bridge arm device.
As shown in fig. 3 to 6, the laminated busbar includes four layers, and the first layer includes a module positive busbar P, a module negative busbar N, and a center line point busbar O; the second layer comprises a left bridge arm suspension capacitor positive bus bar 2-1, a left bridge arm suspension capacitor negative bus bar 2-2, a right bridge arm suspension capacitor positive bus bar 2-3 and a right bridge arm suspension capacitor negative bus bar 2-4; the third layer comprises a left upper connecting bus bar 3-1, a left lower connecting bus bar 3-2, a right upper connecting bus bar 3-3 and a right lower connecting bus bar 3-4; the fourth layer comprises a left bridge arm alternating current output bus bar a and a right bridge arm alternating current output bus bar b.
The layout of the left half-bridge arm device is as follows, as shown in fig. 2:
the first IGBT group T1 is located at the upper right corner, two independent S1 and S2 in the assembly are arranged in series from right to left, the collector terminal interface of the S1 at the right side is located at the rightmost side, the emitter terminal interface of the S2 at the left side is located in the middle, and the interface of the series midpoint terminal is located at the leftmost side;
the second IGBT group T2 is located below the first IGBT group T1, two independent S9 and S10 in the assembly are arranged in series from right to left, a collector terminal interface of the S9 on the left side is located on the rightmost side, an emitter terminal interface of the S10 on the right side is located in the middle, and an interface of a series midpoint terminal is located on the leftmost side;
the third IGBT group T3 is located at the lower right corner, two independent S11, S12 in the module are arranged in series from right to left, the left side S11) is located at the rightmost side of the collector terminal interface, the right side S12 is located at the middle of the emitter terminal interface, and the interface of the series midpoint terminal is located at the leftmost side;
the fourth IGBT group T4 is located above the third IGBT group T3, two independent S7 and S8 in the assembly are arranged in series from right to left, a collector terminal interface of the S7 on the left side is located on the rightmost side, an emitter terminal interface of the S8 on the right side is located in the middle, and an interface of a series midpoint terminal is located on the leftmost side;
the fifth IGBT group T5 is positioned in the middle and is positioned below the second IGBT group T2, two independent S3 and S4 in the assembly are arranged in series from right to left, the collector terminal interface of the S3 on the left side is positioned on the rightmost side, the emitter terminal interface of the S4 on the right side is positioned in the middle, and the interface of the series midpoint terminal is positioned on the leftmost side;
the sixth IGBT group T6 is located in the middle, below the fifth IGBT group T5, and two independent S5, S6 in the assembly are arranged in series from right to left, with the left side S5 collector terminal interface at the rightmost side, the right side S6 emitter terminal interface at the middle, and the interface of the series midpoint terminal at the leftmost side.
The layout of the right half-bridge arm device is the same as that of the left half-bridge arm device, and the right half-bridge arm device is located on the right side of the laminated busbar and is not described in detail herein.
The left half-bridge arm device is connected with the laminated busbar as follows:
the left port of the second IGBT group T2 passes through the left bridge arm suspension capacitor positive bus bar 2-1 and the left bridge arm suspension capacitor C of the second layerf1Connecting the positive electrode;
the left port of the third IGBT group T3 passes through the left bridge arm suspension capacitor negative bus bar 2-2 and the left bridge arm suspension capacitor C of the second layerf1Connecting the negative electrodes;
the middle port of the first IGBT group T1 is respectively connected with the rightmost port of the second IGBT group T2 and the rightmost port of the fifth IGBT group T5 through the upper left connecting bus bar 3-1 of the third layer;
the middle port of the sixth IGBT group T6 is respectively connected with the middle port of the third IGBT group T3 and the rightmost port of the fourth IGBT group T4 through a lower left connecting busbar 3-2 of the third layer;
the middle port of the second IGBT group T2 is connected to the rightmost port of the third IGBT group T3 through the left arm ac output bus a of the fourth layer.
The layout of right half bridge arm device is the same with the layout of left half bridge arm device, and right half bridge arm device is connected with the female row of stromatolite and is completely unanimous with left half bridge arm device and the female connection of stromatolite mother, promptly:
the left port of the eighth IGBT group T8 passes through the right bridge arm suspension capacitor positive bus bar 2-3 and the right bridge arm suspension capacitor C of the second layerf2Connecting the positive electrode;
the left port of the ninth IGBT group T9 passes through the right bridge arm suspension capacitor negative bus bar 2-4 and the right bridge arm suspension capacitor C of the second layerf2Connecting the negative electrodes;
the middle port of the seventh IGBT group T7 is respectively connected with the rightmost port of the eighth IGBT group T8 and the rightmost port of the eleventh IGBT group T11 through an upper right connecting busbar 3-3 of the third layer;
the middle port of the twelfth IGBT group T12 is respectively connected with the middle port of the ninth IGBT group T9 and the rightmost port of the tenth IGBT group T10 through a right lower connecting bus bar 3-4 of the third layer;
the middle port of the eighth IGBT group T8 is connected to the rightmost port of the ninth IGBT group T9 through the right arm ac output bus bar b of the fourth layer.
In addition, the upper support capacitor Cd1The positive electrode is respectively connected with the rightmost port of the first IGBT group T1 and the rightmost port of the seventh IGBT group T7 through a module positive busbar P of the first layer;
upper support capacitor Cd1The negative electrode is respectively connected with the lower support capacitor C through the neutral point bus bar O of the first layerd2The positive electrode, the middle port of the fifth IGBT group T5, the rightmost port of the sixth IGBT group T6, the middle port of the eleventh IGBT group T22, and the rightmost port of the twelfth IGBT group T12 are connected;
lower support capacitor Cd2And the negative electrode is respectively connected with the middle port of the fourth IGBT group T4 and the middle port of the tenth IGBT group T10 through the module negative busbar N of the first layer.
In conclusion, the invention effectively shortens the length of the current conversion path, improves the composite effect of the current conversion loop, effectively reduces the stray inductance of the current conversion loop, can greatly reduce the turn-off overvoltage of a power device, enlarges the safe working area of the converter and is beneficial to the long-term safe and stable operation of the five-level active clamping converter through the reasonable laminated busbar structure and the device layout.
In addition to the above examples, the present invention may have other embodiments, and all technical solutions formed by equivalent substitutions or equivalent transformations fall within the scope of the claims of the present patent.

Claims (5)

1. A laminated busbar structure layout of a five-level active neutral point clamped H-bridge converter comprises a left half-bridge arm device, a right half-bridge arm device, a laminated busbar and an upper support capacitor Cd1And a lower support capacitor Cd2Left bridge arm suspension capacitor Cf1And a right arm suspension capacitor Cf2(ii) a The left half-bridge arm device comprises a first IGBT group T1, a second IGBT group T2, a third IGBT group T3, a fourth IGBT group T4, a fifth IGBT group T5 and a sixth IGBT group T6, and each IGBT group comprises two independent IGBTs; the method is characterized in that: the left half-bridge arm device and the right half-bridge arm device are the same in layout, the left half-bridge arm device is positioned on the right half part of the laminated busbar, and the right half-bridge arm device is positioned on the left half part of the laminated busbar;
the first IGBT group T1 is positioned at the upper right corner, two independent IGBTs in the assembly are arranged in series from right to left, the collector terminal interface of the right IGBT is positioned at the rightmost side, the emitter terminal interface of the left IGBT is positioned in the middle, and the interface of the series midpoint terminal is positioned at the leftmost side; the second IGBT group T2 is positioned below the first IGBT group T1, two independent IGBTs in the assembly are arranged in series from right to left, a collector terminal interface of the left IGBT is positioned at the rightmost side, an emitter terminal interface of the right IGBT is positioned in the middle, and an interface of a series midpoint terminal is positioned at the leftmost side; the third IGBT group T3 is positioned at the lower right corner, two independent IGBTs in the assembly are arranged in series from right to left, the collector terminal interface of the IGBT on the left side is positioned at the rightmost side, the emitter terminal interface of the IGBT on the right side is positioned in the middle, and the interface of the series midpoint terminal is positioned at the leftmost side; the fourth IGBT group T4 is positioned above the third IGBT group T3, two independent IGBTs in the assembly are arranged in series from right to left, a collector terminal interface of the left IGBT is positioned at the rightmost side, an emitter terminal interface of the right IGBT is positioned in the middle, and an interface of a series midpoint terminal is positioned at the leftmost side; the fifth IGBT group T5 is positioned in the middle and is positioned below the second IGBT group T2, two independent IGBTs in the assembly are arranged in series from right to left, the collector terminal interface of the left IGBT is positioned at the rightmost side, the emitter terminal interface of the right IGBT is positioned in the middle, and the interface of the series midpoint terminal is positioned at the leftmost side; the sixth IGBT group T6 is located in the middle and below the fifth IGBT group T5, two independent IGBTs in the assembly are arranged in series from right to left, the left IGBT collector terminal interface is located at the rightmost side, the right IGBT emitter terminal interface is located in the middle, and the interface of the series midpoint terminal is located at the leftmost side.
2. The laminated busbar structure layout of the five-level active neutral point clamped H-bridge converter according to claim 1, characterized in that: the laminated busbar comprises four layers, wherein the first layer comprises a module positive busbar P, a module negative busbar N and a midline point busbar O; the second layer comprises a left bridge arm suspension capacitor positive bus bar (2-1), a left bridge arm suspension capacitor negative bus bar (2-2), a right bridge arm suspension capacitor positive bus bar (2-3) and a right bridge arm suspension capacitor negative bus bar (2-4); the third layer comprises a left upper connecting busbar (3-1), a left lower connecting busbar (3-2), a right upper connecting busbar (3-3) and a right lower connecting busbar (3-4); the fourth layer comprises a left bridge arm alternating current output bus bar a and a right bridge arm alternating current output bus bar b.
3. The laminated busbar structure layout of the five-level active neutral point clamped H-bridge converter according to claim 2, characterized in that: the left port of the second IGBT group T2 passes through a left bridge arm suspension capacitor positive bus bar (2-1) of a second layer and a left bridge arm suspension capacitor Cf1Connecting the positive electrode; the left port of the third IGBT group T3 passes through the left bridge arm suspension capacitor negative busbar (of the second layer) ((2-2) and left bridge arm suspension capacitor Cf1Connecting the negative electrodes; the middle port of the first IGBT group T1 is respectively connected with the rightmost port of the second IGBT group T2 and the rightmost port of the fifth IGBT group T5 through an upper left connecting busbar (3-1) of a third layer; the middle port of the sixth IGBT group T6 is respectively connected with the middle port of the third IGBT group T3 and the rightmost port of the fourth IGBT group T4 through a left lower connecting bus bar (3-2) of the third layer; the middle port of the second IGBT group T2 is connected to the rightmost port of the third IGBT group T3 through the left arm ac output bus a of the fourth layer.
4. The laminated busbar structure layout of the five-level active neutral point clamped H-bridge converter according to claim 2, characterized in that: the left bridge arm suspension capacitor Cf1And a right arm suspension capacitor Cf2On the upper support capacitor Cd1And a lower support capacitor Cd2While, the left bridge arm suspension capacitor Cf1And a right bridge arm suspension capacitor Cf2Upper support capacitor Cd1And a lower support capacitor Cd2And the bridge circuit is positioned between the left half-bridge arm device and the right half-bridge arm device.
5. The laminated busbar structure layout of the five-level active neutral point clamped H-bridge converter according to claim 4, wherein: the upper support capacitor Cd1The positive electrode is respectively connected with the rightmost port of the first IGBT group T1 and the rightmost port of the seventh IGBT group T7 through a module positive busbar P of the first layer; the upper support capacitor Cd1The negative electrode is respectively connected with the lower support capacitor C through the neutral point bus bar O of the first layerd2The positive electrode, the middle port of the fifth IGBT group T5, the rightmost port of the sixth IGBT group T6, the middle port of the eleventh IGBT group T22, and the rightmost port of the twelfth IGBT group T12 are connected; the lower support capacitor Cd2And the negative electrode is respectively connected with the middle port of the fourth IGBT group T4 and the middle port of the tenth IGBT group T10 through the module negative busbar N of the first layer.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114640265A (en) * 2022-02-25 2022-06-17 山东大学 Multilevel single-phase interphase hybrid topology converter and control method

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