CN217769911U

CN217769911U - Structure of three-level inverter circuit with medium-voltage high-power modules connected in parallel

Info

Publication number: CN217769911U
Application number: CN202123392396.3U
Authority: CN
Inventors: 孟兵
Original assignee: Shenzhen Sanxing Technology Co ltd
Current assignee: Shenzhen Sanxing Technology Co ltd
Priority date: 2021-12-29
Filing date: 2021-12-29
Publication date: 2022-11-08
Anticipated expiration: 2031-12-29

Abstract

The utility model discloses a structure of a three-level inverter circuit with parallel medium-voltage high-power modules, which comprises a three-level circuit, wherein the top end of the three-level circuit is provided with a connecting pin, and the top end of the connecting pin is fixedly connected with a copper bar bus; the utility model provides an among the technical scheme, through setting up three level circuit to realize the power device technique of heavy current through three level circuit, realize high withstand voltage's technique simultaneously, reach the power that improves whole inverter circuit and withstand voltage performance's purpose, through setting up copper bar generating line and connecting the foot, and connect through copper bar generating line and connection foot stromatolite design, thereby reduce stray inductance, reach effectively to reduce return circuit parasitic inductance and avoid influencing inverter circuit normal use's purpose.

Description

Structure of three-level inverter circuit with medium-voltage high-power modules connected in parallel

Technical Field

The utility model relates to an inverter technical field specifically is a parallelly connected three level inverter circuit's of high-power module of middling pressure structure.

Background

The inverter circuit is used to form various ac power sources, and is widely used in industry.

The prior art has the following defects or problems:

the existing inverter circuit is generally low in power due to poor connection mode, poor in voltage resistance, and easy to generate a large amount of stray inductance to influence normal use of the inverter circuit.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a parallelly connected three level inverter circuit's of high-power module of middling pressure structure to the weak point to prior art to the problem that proposes in the solution background art.

In order to achieve the above object, the utility model provides a following technical scheme:

the structure of the three-level inverter circuit with the medium-voltage high-power modules connected in parallel comprises a three-level circuit, wherein a connecting pin is arranged at the top end of the three-level circuit, and a copper bar bus is fixedly connected to the top end of the connecting pin.

The three-level circuit comprises nine IGBT modules and nine module gate electrode plates, the nine IGBT modules are divided into three groups, and each group of three IGBT modules are connected in parallel and then connected in series to form a three-level main topological loop.

Optionally, the connection pins include a first pin, a second pin, a third pin, a fourth pin, a fifth pin, a sixth pin, a seventh pin, an eighth pin and a ninth pin, and the first pin, the second pin, the third pin, the fourth pin, the fifth pin, the sixth pin, the seventh pin, the eighth pin and the ninth pin are uniformly distributed and connected to the top end of the IGBT module on average.

Optionally, the copper bar bus comprises a direct current N bus, a direct current O bus and a direct current P bus, the direct current N bus is fixedly connected with the fifth pin, the direct current O bus is fixedly connected with the second pin and the fourth pin, respectively, and the direct current P bus is fixedly connected with the first pin.

Optionally, the third pin is fixedly connected to the seventh pin, the sixth pin is fixedly connected to the eighth pin, and the top end of the ninth pin is fixedly connected to an AC output terminal.

Optionally, the copper bar bus bars are coated and spaced by insulation paper.

Compared with the prior art, the utility model provides a parallelly connected three level inverter circuit's of high-power module of middling pressure structure possesses following beneficial effect:

1. the utility model realizes the power device technology of heavy current and high voltage resistance technology through the three-level circuit by arranging the three-level circuit, thereby achieving the purpose of improving the power and voltage resistance of the whole inverter circuit;

2. the utility model discloses a set up the copper bar generating line and connect the foot to connect through copper bar generating line and connection foot stromatolite design, thereby reduce stray inductance, reach effective reduction return circuit parasitic inductance and avoid influencing inverter circuit normal use's purpose.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.

Fig. 1 is a schematic diagram of the structure of the three-level inverter circuit of the present invention.

In the figure: 1. an IGBT module; 2. a module gate plate; 3. a first leg; 4. a second leg; 5. a third leg; 6. a fourth leg; 7. a fifth leg; 8. a sixth leg; 9. a seventh leg; 10. an eighth leg; 11. a ninth foot; 12. a direct current N bus; 13. a direct current O bus; 14. a direct current P bus; 15. an AC output terminal.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "vertical", "upper", "lower", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.

In the description of the present invention, it should be further noted that, unless otherwise specified or limited, the terms "disposed," "installed," "connected" and "connected" should be understood broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, mechanically connected, electrically connected, directly connected, or connected through an intermediate medium, and can communicate between the inside of two elements. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

Referring to fig. 1, in the present embodiment: the utility model provides a parallelly connected three level inverter circuit's of high-power module of middling pressure structure, includes three level circuit, and the top of three level circuit is provided with connects the foot, connects the top fixedly connected with copper bar bus-bar of foot. The three-level circuit comprises nine IGBT modules 1 and nine module gate electrode plates 2, the nine IGBT modules 1 are divided into three groups, and each group of three IGBT modules 1 are connected in parallel and then connected in series to form a three-level main topological loop; the IGBT module 1 is connected in parallel to improve the power of the circuit, then is connected in series to increase the voltage resistance of the structure, is connected with the circuit through the connecting pins, and is input and output through the copper bar bus.

The connecting pins comprise a first pin 3, a second pin 4, a third pin 5, a fourth pin 6, a fifth pin 7, a sixth pin 8, a seventh pin 9, an eighth pin 10 and a ninth pin 11, and on average, three groups of the first pin 3, the second pin 4, the third pin 5, the fourth pin 6, the fifth pin 7, the sixth pin 8, the seventh pin 9, the eighth pin 10 and the ninth pin 11 are uniformly distributed and connected to the top end of the IGBT module 1; the connection of the IGBT module 1 is realized through the connecting pins.

The copper bar bus comprises a direct current N bus 12, a direct current O bus 13 and a direct current P bus 14, the direct current N bus 12 is fixedly connected with the fifth pin 7, the direct current O bus 13 is respectively fixedly connected with the second pin 4 and the fourth pin 6, and the direct current P bus 14 is fixedly connected with the first pin 3; and the copper bar buses are connected in a laminated manner, so that different direct current buses are input.

The third pin 5 is fixedly connected with the seventh pin 9, the sixth pin 8 is fixedly connected with the eighth pin 10, and the top end of the ninth pin 11 is fixedly connected with an AC output end 15; the third pin 5 and the seventh pin 9 are fixedly connected, and the sixth pin 8 and the eighth pin 10 are fixedly connected to form a parallel circuit, and output to the outside through an AC output terminal 15.

The copper bar buses are coated and spaced by adopting insulating paper; through adopting insulating paper to wrap the interval, realize that the overlap maximize of each section generating line reduces stray inductance.

The utility model discloses a theory of operation and use flow: during the use, divide into three groups through nine IGBT modules 1, every three IGBT module 1 of group adopts parallelly connected, then connect the mode of establishing ties again and form three level main topological return circuit, thereby realize the power device technique and the high withstand voltage's of heavy current technique, reach the purpose that improves whole inverter circuit's power and withstand voltage performance, be connected with fifth foot 7 through direct current N generating line 12, direct current O generating line 13 is connected with second foot 4 and fourth foot 6, direct current P generating line 14 is connected with first foot 3, third foot 5 is connected with seventh foot 9, sixth foot 8 is connected with eighth foot 10, thereby make the structure female arranging adopt the stromatolite design, and adopt insulated paper cladding and interval through the copper bar generating line, thereby realize that each section generating line overlaps the maximize and reduce stray inductance, realize reducing the parasitic inductance technique of return circuit, reach effectively to reduce the parasitic inductance of return circuit and avoid influencing the purpose that inverter circuit normally used.

The above only is the preferred embodiment of the present invention, not so limiting the patent scope of the present invention, all under the concept of the present invention, the equivalent structure transformation made by the contents of the specification and the drawings is utilized, or the direct/indirect application is included in other related technical fields in the patent protection scope of the present invention.

Claims

1. The utility model provides a parallelly connected three level inverter circuit's of high-power module of middling pressure structure which characterized in that: the circuit comprises a three-level circuit, wherein a connecting pin is arranged at the top end of the three-level circuit, and a copper bar bus is fixedly connected to the top end of the connecting pin;

the three-level circuit comprises nine IGBT modules (1) and nine module gate electrode plates (2), wherein the nine IGBT modules (1) are divided into three groups, and each group of three IGBT modules (1) are connected in parallel and then connected in series to form a three-level main topology loop.

2. The structure of the parallel three-level inverter circuit of the medium voltage high power module according to claim 1, characterized in that: the connecting foot comprises a first foot (3), a second foot (4), a third foot (5), a fourth foot (6), a fifth foot (7), a sixth foot (8), a seventh foot (9), an eighth foot (10) and a ninth foot (11), and the first foot (3), the second foot (4), the third foot (5), the fourth foot (6), the fifth foot (7), the sixth foot (8), the seventh foot (9), the eighth foot (10) and the ninth foot (11) are evenly distributed on the top end of the IGBT module (1).

3. The structure of the parallel three-level inverter circuit of the medium voltage high power module according to claim 1, characterized in that: the copper bar bus comprises a direct current N bus (12), a direct current O bus (13) and a direct current P bus (14), the direct current N bus (12) is fixedly connected with a fifth pin (7), the direct current O bus (13) is fixedly connected with a second pin (4) and a fourth pin (6) respectively, and the direct current P bus (14) is fixedly connected with a first pin (3).

4. The structure of the parallel three-level inverter circuit of the medium voltage high power module according to claim 2, characterized in that: the third pin (5) is fixedly connected with the seventh pin (9), the sixth pin (8) is fixedly connected with the eighth pin (10), and the top end of the ninth pin (11) is fixedly connected with an AC output end (15).

5. The structure of the parallel three-level inverter circuit of the medium-voltage high-power module according to claim 1, characterized in that: the copper bar buses are coated and separated by insulating paper.