CN217643158U - Silicon carbide DC/DC power module - Google Patents

Abstract

A silicon carbide DC/DC power module, comprising: the circuit comprises a radiator, a silicon carbide power module arranged on a substrate above the radiator, a capacitor connected with the silicon carbide power module, and a control circuit module arranged above the silicon carbide power module; the capacitors are arranged on two sides of the radiator; and the silicon carbide power module is connected with the control circuit module. The utility model adopts the silicon carbide power module to reduce the volume of the DC/DC power module; the silicon carbide power module with large heat productivity is arranged above the radiator, and the capacitor is arranged on two sides of the radiator, so that a good heat dissipation effect is realized, the reliability of the power module is improved, and the service life of equipment is prolonged; the radiator, the silicon carbide power module and the control circuit module are arranged in a modularized three-layer overlapping mode, so that the isolation and electromagnetic compatibility of the power circuit and the control circuit are facilitated, and good electrical performance is realized.

Description

Silicon carbide DC/DC power module

Technical Field

The utility model belongs to the power equipment field, concretely relates to carborundum DC/DC power module.

Background

With the increasingly prominent global energy crisis and environmental problems, the development of power electronic technology brings a new opportunity for solving the energy problems. The explosion of new energy distributed power generation pushes the high-speed growth of flexible direct current transmission, so that power electronic equipment develops towards the direction of high power and high voltage. However, the size of the direct current transmission converter or converter equipment is huge, a large amount of active heat dissipation equipment is needed, the construction cost is high, and the maintenance workload is large; due to the superiority of materials of the third-generation semiconductor silicon carbide power device, the volume of equipment under the same power and loss is far smaller than that of equipment using the traditional IGBT, a new development direction is provided for high-power miniaturization of direct current power transmission and transformation equipment, and the economic benefit is better than that of equipment using the traditional IGBT. However, the large-power and large-current operation after the volume reduction brings a large number of problems of electromagnetic compatibility and heat dissipation.

The DC/DC power module, as an important device for DC power transmission and transformation, also faces a strong demand for reducing the size of the device, and also faces electromagnetic compatibility and heat dissipation problems caused by high-power and high-current operation after the size is reduced.

SUMMERY OF THE UTILITY MODEL

The utility model aims at solving the problem that the volume of a DC/DC power module is reduced, and the electromagnetic compatibility and the heat dissipation are brought by the operation of high-power and high-current after the volume is reduced.

The utility model aims at adopting the following technical scheme to realize:

a silicon carbide DC/DC power module, comprising: the circuit comprises a radiator, a silicon carbide power module arranged on a substrate above the radiator, a capacitor connected with the silicon carbide power module, and a control circuit module arranged above the silicon carbide power module; the capacitors are arranged on two sides of the radiator; and the silicon carbide power module is connected with the control circuit module.

Preferably, a fan for heat dissipation is fixedly mounted on the side edge of the heat sink.

Preferably, the fan comprises an axial fan.

Preferably, the heat sink includes a fin type air-cooled heat sink.

Preferably, the silicon carbide power module comprises a substrate, a silicon carbide power device, a silicon carbide driving circuit and a resistor, wherein the silicon carbide power device, the silicon carbide driving circuit and the resistor are fixed on the substrate; the substrate is fixed above the radiator.

Preferably, the control circuit module is connected with the silicon carbide driving circuit through an optical fiber cable.

Preferably, the low-inductance laminated busbar is used for connecting the capacitor and the silicon carbide power module.

Preferably, the low-inductance laminated busbar includes a busbar external terminal serving as an external electrical interface.

Preferably, the low-inductance laminated busbar comprises a plurality of layers of copper bars and insulating adhesive films which are mutually overlapped at intervals; each copper bar is connected with a contact on a different silicon carbide power module and a contact on a capacitor; and the copper bars are electrically isolated from each other by using an insulating glue film, and opposite currents flow in adjacent copper bars.

Preferably, the solar cell further comprises a metal outer frame connected with the heat radiator, the silicon carbide power module, the capacitor and the control circuit module.

Compared with the prior art, the beneficial effects of the utility model are that:

1. a silicon carbide DC/DC power module, comprising: the circuit comprises a radiator, a silicon carbide power module arranged on a substrate above the radiator, a capacitor connected with the silicon carbide power module, and a control circuit module arranged above the silicon carbide power module; the capacitors are arranged on two sides of the radiator; and the silicon carbide power module is connected with the control circuit module. The utility model adopts the silicon carbide power module to remarkably reduce the volume of the DC/DC power module, the silicon carbide DC/DC power module has compact structure, small space size, convenient disassembly and maintenance and lower economic cost, and simultaneously, the equipment cost is further reduced along with the continuous expansion of the production and application of the silicon carbide; the silicon carbide power module with large heat productivity is arranged on the substrate above the radiator, and the capacitor is arranged on two sides of the radiator, so that a good heat dissipation effect is realized, the reliability of the power module is improved, and the service life of equipment is prolonged; the radiator, the silicon carbide power module and the control circuit module are arranged in a modularized three-layer overlapping mode, so that the isolation and electromagnetic compatibility of the power circuit and the control circuit are facilitated, and good electrical performance can be achieved.

2. The utility model discloses an use the female connection of arranging of low sense stromatolite electric capacity and carborundum power module have reduced the stray inductance and the impedance of circuit to reduce the harm of voltage peak to power device, reduce the line loss simultaneously.

3. The utility model discloses a set up axial fan at radiator heat dissipation end, realized the initiative heat dissipation, further improve power module's reliable type, extension equipment life.

Drawings

Fig. 1 is a schematic view of the overall structure of the present invention;

fig. 2 is a schematic view of the installation position of the laminated busbar of the present invention;

fig. 3 is a schematic layout diagram of the heat sink, the power device and the capacitor according to the present invention;

fig. 4 is an exploded view of the laminated busbar structure of the present invention;

wherein: the power device comprises a capacitor 1, a capacitor 2, a capacitor contact 3, a silicon carbide power device 4, a silicon carbide power device contact 5, a silicon carbide power module 6, a radiator 7, a metal outer frame 8, a control circuit module 9, a low-inductance laminated busbar 10, a resistor 11, a fan 12, a side plate 31, a silicon carbide driving circuit 91, a first copper bar 92, a second copper bar 93, a third copper bar 94, an insulating glue film 94, a bus bar 901, an external terminal 902, a round hole 903 and an insulating pad.

Detailed Description

As shown in fig. 1, the utility model discloses a carborundum DC/DC power module for layering multiple-end access device in the electric wire netting is the high-power converter in the electric wire netting, and it includes: the power module comprises a heat radiator 6, a silicon carbide power module 5 arranged on a substrate above the heat radiator 6, a capacitor 1 connected with the silicon carbide power module 5, and a control circuit module 8 arranged above the silicon carbide power module 5; the silicon carbide power module 5 is connected with a control circuit module 8.

The utility model discloses an overall dimension does: 300mm high, 450mm wide and 580mm long.

As shown in fig. 1, for protection and further fixed support, the power module further includes a metal outer frame 7, the metal outer frame 7 is a U-shaped frame structure formed by sheet metal and having two side plates and a bottom plate, the metal outer frame 7 further includes a side plate 12 for closing a side surface, and the side plate 12 is connected and fixed with the metal outer frame 7 by a screw; or the upper cover made of the metal plate with the N-shaped structure is adopted to simultaneously seal the two sides and the top of the metal outer frame 7.

As shown in fig. 1 or fig. 2, the heat dissipation manner of the silicon carbide DC/DC power module of the present invention is natural air cooling or forced air cooling. A radiator 6 is installed on a bottom plate of a metal outer frame 7, a fan 11 is fixedly installed at one end of the radiator 6, and the rotation speed or the switch of the fan 11 is adjusted through a temperature control circuit to achieve intelligent heat dissipation of the power module. The radiator 6 is a fin type air-cooled radiator, and fins are arranged along the air duct direction. A fan 11 is fixedly installed at one end of the radiator 6, and an axial flow fan is adopted to enable the wind direction to blow along the direction of the fins for heat dissipation.

As shown in fig. 2 and fig. 3, the capacitors 1 are four, and two capacitors are divided into two groups and respectively arranged on two sides of the air-cooled heat sink 6.

As shown in fig. 1 and 3, a silicon carbide power module 5 is mounted on the substrate of the heat sink 6; the silicon carbide power module 5 comprises a substrate, a silicon carbide power device 3, a silicon carbide driving circuit 31 and a resistor 10, wherein the silicon carbide power device 3, the silicon carbide driving circuit 31 and the resistor 10 are fixed on the substrate; the silicon carbide power device 3 and the capacitor 1 are main power devices of the silicon carbide DC/DC power module. The silicon carbide power devices 3 are arranged in four groups along the fin arrangement direction of the radiator 6 and fixed on the radiating substrate of the radiator 6 through bolts. A silicon carbide driving circuit 5 is inserted on the driving pin of each silicon carbide power device 3.

According to the electrical principle, the low-inductance laminated busbar 9 is fixedly installed on the silicon carbide power device contact 4 and the capacitor contact 2 by bolts. The busbar external terminal 901 is used as an external connection terminal of the low-inductance laminated busbar 9, is a main external electrical interface of the silicon carbide DC/DC power module, and is arranged at the other end of the heat radiator 6, namely an air outlet of the module. The stray inductance and impedance of the circuit are reduced by using the mode of connecting the silicon carbide power device 3 with the capacitor 1 by using the low-inductance laminated busbar 9, so that the damage of voltage spikes to the power device is reduced, and the loss of the circuit is reduced. The number of the silicon carbide power devices 5 and the capacitors 1 can be increased or decreased according to the requirements of different power levels.

The control circuit module 8 and the radiator 6 are installed between the left side plate and the right side plate of the metal outer frame 7 in an up-down layered mode. The control circuit module 8 is used for driving the silicon carbide power device 3. The resistor 10 is connected with the low-inductance laminated busbar 9 by a cable to realize the electrical connection of the circuit; the control circuit module 8 is connected with the silicon carbide driving circuit 31 through an optical fiber cable to realize the control of the power module function; therefore, the whole two-level silicon carbide power module is more compact in structure, and wiring and later maintenance are facilitated.

As shown in fig. 4, the low-inductance laminated busbar 9 is a connecting bar with a multilayer composite structure, and is formed by mutually overlapping, bonding and packaging three copper bars including a first copper bar 91, a second copper bar 92 and a third copper bar 93 and four insulating adhesive films 94, and processing round holes 902 at corresponding electrical connection positions so as to install bolts. First copper bar 91, the edge and the subregion of the both sides face of second copper bar 92 or third copper bar 93 have insulating pad 903, carry out electrical isolation with insulating glued membrane 94 between copper bar (including first copper bar 91, second copper bar 92 and third copper bar 93) layer and the layer simultaneously, adjacent copper bar circulation opposite electric current, the magnetic field that adjacent copper bar produced offsets each other to reduce stray inductance, improve system reliability, and can effectively save installation space.

The utility model discloses a low sense stromatolite female row 9 mode of being connected carborundum power device 3 and electric capacity 1 has reduced the stray inductance and the impedance of circuit to reduce the harm of voltage peak to power device, reduce the line loss. The silicon carbide DC/DC power module has the advantages of compact structure, small space size, convenient disassembly and maintenance and lower economic cost.

The above description is only exemplary of the invention and is not intended to limit the invention, and any modifications, equivalent alterations, improvements and the like which are made within the spirit and principle of the invention are all included in the scope of the claims which are appended hereto.

Claims (10)

1. A silicon carbide DC/DC power module, comprising: the circuit comprises a radiator (6), a silicon carbide power module (5) arranged above the radiator (6), a capacitor (1) connected with the silicon carbide power module (5), and a control circuit module (8) arranged above the silicon carbide power module (5); the capacitors (1) are arranged on two sides of the radiator (6); and the silicon carbide power module (5) is connected with the control circuit module (8).

2. A silicon carbide DC/DC power module according to claim 1, characterized in that a fan (11) for heat dissipation is fixedly mounted on the side of the heat sink (6).

3. A silicon carbide DC/DC power module according to claim 2, characterized in that the fan (11) comprises an axial fan.

4. A silicon carbide DC/DC power module according to claim 1, characterized in that the heat sink (6) comprises a fin-type air-cooled heat sink.

5. A silicon carbide DC/DC power module according to claim 1, wherein the silicon carbide power module (5) comprises a substrate, a silicon carbide power device (3), a silicon carbide driver circuit (31) and a resistor (10) mounted on the substrate; the substrate is fixed above the radiator (6).

6. A silicon carbide DC/DC power module according to claim 5, characterized in that the control circuit module (8) is connected to the silicon carbide drive circuit (31) by means of a fiber optic cable.

7. A silicon carbide DC/DC power module according to claim 1, further comprising a low inductance laminated busbar (9) connecting the capacitor (1) to the silicon carbide power module (5).

8. The silicon carbide DC/DC power module according to claim 7, wherein the low-inductance laminated busbar (9) includes busbar external terminals (901) serving as external electrical interfaces.

9. The silicon carbide DC/DC power module according to claim 7, wherein the low inductance laminated busbar (9) comprises a plurality of layers of copper bars and insulating adhesive films (94) which are stacked at intervals; each copper bar is connected with a contact on a different silicon carbide power module (5) and a contact on the capacitor (1); the copper bars are electrically isolated from one another by insulating adhesive films (94), and opposite currents flow through adjacent copper bars.

10. A silicon carbide DC/DC power module according to any of claims 1-9, further comprising a metal outer frame (7) connected to the heat sink (6), the silicon carbide power module (5), the capacitor (1) and the control circuit module (8).

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