CN106253701A - IGBT power module architectures - Google Patents
IGBT power module architectures Download PDFInfo
- Publication number
- CN106253701A CN106253701A CN201610793931.0A CN201610793931A CN106253701A CN 106253701 A CN106253701 A CN 106253701A CN 201610793931 A CN201610793931 A CN 201610793931A CN 106253701 A CN106253701 A CN 106253701A
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- igbt
- igbt module
- module
- copper
- module group
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses IGBT power module architectures, drive plate, the radiator of IGBT module group including IGBT module group, IGBT, connect the DC master row of IGBT module, the AC copper-line of IGBT module parallel, IGBT module is arranged in the both sides of radiator.The IGBT power module architectures that the present invention relates to can reduce the stray inductance of IGBT module, reduces the shutoff overvoltage of IGBT module；IGBT module can be arranged in radiator both sides, and structure is compacter, improves power density；AC copper-line path is identical, and IGBT current-sharing is more excellent, and reliability is higher.
Description
Technical field
The invention belongs to electronic device field, be specifically related to IGBT power module architectures.
Background technology
Power semiconductor quickly grows in recent years, and the density of power semiconductor improves constantly, and new device renewal speed is accelerated,
High-power electric and electronic inverter, especially wind electric converter, photovoltaic DC-to-AC converter, universal frequency converter, energy accumulation current converter etc. are very
Be limited to the development of IGBT module, along with the development of New IGBT module, the composite loss of following IGBT module is lower, efficiency more
Height, volume are less, and high-power electric and electronic inverter also direction higher to switching frequency, that volume is less, cost is lower is developed.
But, compared to slower developments such as IGBT module, passive device (electric capacity, resistance) and cooling systems, constrain the merit of inverter
Rate density promotes, the power density of inverter to be improved, it is necessary to IGBT power model reasonable in design, the most common IGBT merit
There is various structures form in rate module, but there is following defect: IGBT power model and DC bus capacitor separate, power model
Although volume is little, but power density is the most relatively low, and IGBT module stray inductance increases simultaneously, and IGBT device reliability reduces.
Summary of the invention
It is an object of the invention to design and a kind of connect IGBT power model group on a heat sink, folding by arranging mirror image
Curved DC master row, one piece of problem driving plate and AC copper-line to solve to reduce stray inductance while increasing power density.
For solving the problems referred to above, the present invention proposes IGBT power module architectures.
The technical solution adopted in the present invention is:
IGBT power module architectures, including:
IGBT module group, described IGBT module group is made up of IGBT module parallel；
IGBT drives plate, and described IGBT drives plate to connect IGBT module group, is positioned at outside IGBT module group；
DC master row, described DC master row one end connects IGBT module group, is positioned at outside IGBT module group；
AC copper-line, described AC copper-line one end connects IGBT module group, is positioned at IGBT and drives outside plate；
Radiator, described radiator both sides respectively connect an IGBT module group, two IGBT module groups and being attached thereto
IGBT drives plate, DC master row and AC copper-line with radiator for plane of symmetry specular.
Preferably, described DC master row uses positive and negative busbar stacked system, and bending 90 degree, straight with each IGBT module
Stream terminal connects, and uses the mode of positive and negative busbar lamination to be connected with DC side bus bar copper row, and in the way of bending 90 degree even
It is connected to DC side bus bar copper row, the stray inductance of IGBT module DC master row commutation circuit can be reduced, reduce IGBT module
Turn off overvoltage, improve the safety and reliability of IGBT device.
Preferably, described AC copper-line is connected with the ac terminal of each IGBT module, in the other end and IGBT module group
The distance of each IGBT module ac terminal identical, AC copper-line one end is connected to the ac terminal of multiple IGBT module, separately
One end connects output copper bar, is the equal mobility in order to improve multiple IGBT module.
Preferably, described IGBT drives plate to be driven plate to be merged into one piece by IGBT module in parallel and drives plate, and with each
IGBT module connects, and link position is positioned at the centre position of IGBT module group, in order to reduce driving cable and provide connection reliable
Property, multiple IGBT module in parallel can drive plate be merged into one piece and drive plate, link position to be in centre can to improve and drive
The concordance of dynamic signal.
The present invention has the following advantages and effect:
1, IGBT power model and the DC bus capacitor of the present invention separates, and power model volume is little, safeguards simple, changes
IGBT module low cost.
2, the present invention is become IGBT power model group by least two IGBT power module parallel, and is symmetrically distributed in radiator
Both sides, in same area, increase power density, reduce the manufacturing cost of power model, and the most symmetrical arranges and can keep away
Exempt from IGBT module not current-sharing.
3, the IGBT module DC master row of the present invention uses the mode of positive and negative busbar lamination to be connected with DC side bus bar copper row,
And in the way of bending 90 degree, it is connected to DC side bus bar copper row, the miscellaneous of IGBT module DC master row commutation circuit can be reduced
Dissipate inductance, do not use IGBT Absorption Capacitance simultaneously, it is to avoid Absorption Capacitance easily lost efficacy owing to caloric value is relatively big, and reduced further
Cost.
4, IGBT module AC copper-line one end of the present invention connects the ac terminal of multiple IGBT module, and the other end connects defeated
Going out copper bar, the other end of AC copper-line needs isometric with the distance of multiple IGBT module ac terminals, improves multiple IGBT module
Equal mobility.
Accompanying drawing explanation
The accompanying drawing of the part constituting the application is used for providing a further understanding of the present invention, and the present invention's is schematic real
Execute example and illustrate for explaining the present invention, being not intended that inappropriate limitation of the present invention.
Fig. 1 is the structural representation of the present invention.
Label declaration:
IGBT module 1；IGBT drives plate 2；Radiator 3；DC master row 4；AC copper-line 5.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, right
The present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, not
For limiting the present invention.
Embodiment 1: as it is shown in figure 1, IGBT power module architectures involved in the present invention, including IGBT module group, IGBT
Drive plate 2, the radiator 3 of IGBT module, connect the DC master row 4 of IGBT module and be used for the exchange copper of parallel IGBT module
Row 5.IGBT module group is composed in parallel by two IGBT module 1, is arranged on liquid cooling heat radiator 3, and its IGBT module 1 can be mesh
Front conventional 1000A power model (the such as FF1000R17IE4 of Infineon of Germany forth generation, it is also possible to be follow-up same package
5th generation FF1800R17IP5 of size), it is also possible to it is manufacturing silicon carbide semiconductor (SiC) and the new device of gallium nitride semiconductor (GaN)；
Driving plate 2 to be arranged in two IGBT module, two IGBT module drive plate to be merged into one piece and drive plate 2, its link position position
Centre in two IGBT module 1；The coolant inlet of radiator 3 is positioned at the lower section of cooling liquid outlet；IGBT module direct current is female
Row 4 includes that positive busbar, negative busbar and the dielectric film for positive and negative master row insulating, positive busbar and negative busbar one end connect IGBT module
The DC terminal of 1, its other end is connected to DC side bus bar copper row, positive and negative busbar in the way of lamination with DC side bus bar copper row
Connecting, and be connected to DC side bus bar copper row in the way of bending 90 degree, DC master row 4 can be common copper bar, it is possible to
To be the stack bus bar of BUSBAR mode；AC copper-line 5 one end is connected to the ac terminal of two IGBT module, and the other end connects
Output copper bar, the other end of AC copper-line 5 needs to keep isometric with the distance of two IGBT module ac terminals；IGBT module 1,
Drive plate 2, DC master row 4, AC copper-line 5 be arranged in the both sides of radiator 3, and be distributed in specular.
During use, IGBT power module architectures is connected with output copper bar by AC copper-line 5, by DC master row 4 and
DC side bus bar copper row, completes the installation of IGBT power module architectures.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and
Within principle, any modification, equivalent substitution and improvement etc. made, should be included within the scope of the present invention.
Claims (4)
1.IGBT power module architectures, it is characterised in that including:
IGBT module group, described IGBT module group is made up of IGBT module parallel；
IGBT drives plate, and described IGBT drives plate to connect IGBT module group, is positioned at outside IGBT module group；
DC master row, described DC master row one end connects IGBT module group, is positioned at outside IGBT module group；
AC copper-line, described AC copper-line one end connects IGBT module group, is positioned at IGBT and drives outside plate；
Radiator, described radiator both sides respectively connect an IGBT module group, two IGBT module groups and the IGBT being attached thereto
Drive plate, DC master row and AC copper-line with radiator for plane of symmetry specular.
IGBT power module architectures the most according to claim 1, it is characterised in that described DC master row uses positive and negative busbar
Stacked system, and bending 90 degree, be connected with the DC terminal of each IGBT module.
IGBT power module architectures the most according to claim 1, it is characterised in that described AC copper-line and each IGBT mould
The ac terminal of block connects, and the other end is identical with the distance of each IGBT module ac terminal in IGBT module group.
IGBT power module architectures the most according to claim 1, it is characterised in that described IGBT drives plate by parallel connection
IGBT module drives plate to be merged into one piece and drives plate, and is connected with each IGBT module, and link position is positioned at IGBT module group
Centre position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610793931.0A CN106253701A (en) | 2016-08-31 | 2016-08-31 | IGBT power module architectures |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610793931.0A CN106253701A (en) | 2016-08-31 | 2016-08-31 | IGBT power module architectures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106253701A true CN106253701A (en) | 2016-12-21 |
Family
ID=58079838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610793931.0A Pending CN106253701A (en) | 2016-08-31 | 2016-08-31 | IGBT power module architectures |
Country Status (1)
| Country | Link |
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| CN (1) | CN106253701A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106981480A (en) * | 2017-05-27 | 2017-07-25 | 富士电机（中国）有限公司 | IGBT module, dynamical system and hybrid vehicle |
| CN107425737A (en) * | 2017-09-21 | 2017-12-01 | 北京天诚同创电气有限公司 | Power model, current transformer and wind power generating set |
| CN112713751A (en) * | 2020-12-21 | 2021-04-27 | 中车永济电机有限公司 | High-voltage electrical connection method and structure based on high-power IGBT parallel connection |
| CN112751496A (en) * | 2019-10-30 | 2021-05-04 | 中车株洲电力机车研究所有限公司 | Current transformer |
| GB2619572A (en) * | 2022-06-08 | 2023-12-13 | Eaton Intelligent Power Ltd | Solid state circuit breaker |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201608626U (en) * | 2009-08-26 | 2010-10-13 | Abb瑞士有限公司 | Water-cooling four-phase two-level IGBT module unit |
| CN202034891U (en) * | 2011-05-05 | 2011-11-09 | 艾默生网络能源有限公司 | Full-water-cooling power module |
-
2016
- 2016-08-31 CN CN201610793931.0A patent/CN106253701A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201608626U (en) * | 2009-08-26 | 2010-10-13 | Abb瑞士有限公司 | Water-cooling four-phase two-level IGBT module unit |
| CN202034891U (en) * | 2011-05-05 | 2011-11-09 | 艾默生网络能源有限公司 | Full-water-cooling power module |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106981480A (en) * | 2017-05-27 | 2017-07-25 | 富士电机（中国）有限公司 | IGBT module, dynamical system and hybrid vehicle |
| CN106981480B (en) * | 2017-05-27 | 2023-10-27 | 富士电机（中国）有限公司 | IGBT module, power system and hybrid electric vehicle |
| CN107425737A (en) * | 2017-09-21 | 2017-12-01 | 北京天诚同创电气有限公司 | Power model, current transformer and wind power generating set |
| CN107425737B (en) * | 2017-09-21 | 2019-12-31 | 北京天诚同创电气有限公司 | Power module, converter and wind generating set |
| CN112751496A (en) * | 2019-10-30 | 2021-05-04 | 中车株洲电力机车研究所有限公司 | Current transformer |
| CN112751496B (en) * | 2019-10-30 | 2022-08-12 | 中车株洲电力机车研究所有限公司 | Current transformer |
| CN112713751A (en) * | 2020-12-21 | 2021-04-27 | 中车永济电机有限公司 | High-voltage electrical connection method and structure based on high-power IGBT parallel connection |
| CN112713751B (en) * | 2020-12-21 | 2022-06-14 | 中车永济电机有限公司 | High-voltage electrical connection method and structure based on high-power IGBT parallel connection |
| GB2619572A (en) * | 2022-06-08 | 2023-12-13 | Eaton Intelligent Power Ltd | Solid state circuit breaker |
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Application publication date: 20161221 |
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