JP2013090408A - Electric power conversion device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electric power conversion device that reduces mutual inductance with a semiconductor module by using both a positive-electrode bus bar and a negative-electrode bus bar as well as reducing mutual inductance between the positive-electrode bus bar and the negative-electrode bus bar.SOLUTION: A positive-electrode bus bar 3 has a positive-electrode main-body part 31 which is arranged in an arrangement direction of semiconductor modules 16 between a positive-electrode terminal 5 and a negative-electrode terminal 6. A negative-electrode bus bar 4 has a negative-electrode main-body part 41 which is arranged in an arrangement direction of semiconductor modules 16 between the positive-electrode terminal 5 and the negative-electrode terminal 6. The positive-electrode main-body part 31 and the negative-electrode main-body part 41 are arranged facing each other in a direction of connection between the positive electrode terminal 5 and the negative electrode terminal 6.

Description

  The present invention relates to a power conversion device including a semiconductor module containing a semiconductor element and a cooler that cools the semiconductor module.

  In hybrid vehicles having both an internal combustion engine and an electric motor as drive sources, and electric vehicles equipped with an electric motor as a drive source, both the direct current supplied from the battery and the alternating current output to the electric motor A power conversion device that performs direction conversion is provided. As the power converter, for example, as disclosed in Patent Document 1, a plurality of semiconductor modules including a positive electrode terminal and a negative electrode terminal are arranged in series, and a bus bar is arranged between the positive electrode terminal and the negative electrode terminal. There is something. The bus bar includes a positive electrode bus bar and a negative electrode bus bar, and is arranged so as to extend along the alignment direction of the semiconductor modules. In the positive electrode bus bar, a positive electrode branch portion for connecting to the positive electrode terminal is formed so as to protrude in a direction connecting the positive electrode terminal and the negative electrode terminal. Similarly, in the negative electrode bus bar, a negative electrode branch portion for connecting to the negative electrode terminal is formed so as to protrude in a direction connecting the positive electrode terminal and the negative electrode terminal. Moreover, the positive electrode bus bar and the negative electrode bus bar are arranged so as to overlap with the protruding direction of the positive electrode terminal and the negative electrode terminal so that the negative electrode bus bar side is close to the semiconductor module. By arranging in this way, parallel currents can flow in the opposite directions to the positive electrode bus bar and the negative electrode bus bar, respectively, and the magnetic fields generated around the positive electrode bus bar and the negative electrode bus bar can be offset. Therefore, the mutual inductance between the positive electrode bus bar and the negative electrode bus bar can be reduced.

JP 2007-89257 A

  In the above configuration, when a current flows through the semiconductor module, the current flows from the positive terminal to the negative terminal inside the semiconductor module. Here, when considering the current paths of the positive bus bar, the positive electrode branch, the positive electrode terminal, the semiconductor module, the negative electrode terminal, the negative electrode branch, and the negative electrode bus bar, the direction of the current flowing through the positive electrode branch and the current flowing through the semiconductor module The direction is opposite and parallel. Similarly, the direction of the current flowing through the negative electrode branch and the direction of the current flowing through the semiconductor module are opposite and parallel to each other.

  However, in the above configuration, the positive electrode bus bar and the negative electrode bus bar are arranged so as to overlap the protruding direction of the positive electrode terminal and the negative electrode terminal so that the negative electrode bus bar is close to the semiconductor module. Is longer than the distance between the negative electrode bus bar and the semiconductor module. Here, the decrease in mutual inductance caused by currents flowing in parallel in opposite directions is inversely proportional to the distance between currents flowing in opposite directions. Therefore, the above configuration has a problem that the mutual inductance between the semiconductor module and the semiconductor module cannot be reduced by using both the positive electrode bus bar and the negative electrode bus bar.

  The present invention has been made in view of such a problem. In addition to the reduction in mutual inductance between the positive electrode bus bar and the negative electrode bus bar, the present invention uses both the positive electrode bus bar and the negative electrode bus bar to connect the semiconductor module. An object of the present invention is to provide a power converter that realizes a reduction in mutual inductance.

  In order to solve the above-described problem, the invention described in claim 1 includes a plurality of semiconductor modules each including a semiconductor element, the positive electrode terminal and the negative electrode terminal projecting in the same direction, and a cooler for cooling the semiconductor module. And a power conversion device comprising a positive electrode bus bar and a negative electrode bus bar for supplying power from the power source to the semiconductor module, wherein the plurality of semiconductor modules are arranged such that the positive electrode terminals and the negative electrode terminals are arranged substantially linearly, respectively. The positive bus bar is a first imaginary line between the positive electrode main body portion arranged between the positive electrode terminal and the negative electrode terminal and along the arrangement direction of the semiconductor modules, and the straight line connecting the positive electrode terminal and the negative electrode terminal. The first imaginary line is substantially parallel to the positive electrode main body portion and the positive electrode branch portion disposed in the positive electrode terminal direction, and the negative electrode bus bar is between the positive electrode terminal and the negative electrode terminal. And a negative electrode main body disposed along the arrangement direction of the semiconductor modules, and a negative electrode branch substantially parallel to the first virtual line and disposed from the negative electrode main body toward the negative electrode terminal. And the negative electrode main body portion are arranged side by side with respect to the direction of the first imaginary line, and are arranged to face each other.

  With this configuration, when current is supplied from the power source to the power conversion device, the power source, the positive electrode main body, the positive electrode branch, the positive electrode terminal, the semiconductor module, the negative electrode terminal, the negative electrode branch, the negative electrode main body, and the power supply A current path is formed. Here, the positive electrode main body portion and the negative electrode main body portion are arranged to face each other in the direction of a straight line connecting the positive electrode terminal and the negative electrode terminal. Therefore, the directions of the currents flowing through the positive electrode main body part and the negative electrode main body part are opposite and parallel to each other, and the magnetic fields generated around the positive electrode main body part and the negative electrode main body part can be offset. Therefore, a reduction in mutual inductance between the positive electrode main body and the negative electrode main body can be realized.

  In addition, the direction of the current flowing through the positive electrode branch and the direction of the current flowing from the positive terminal side to the negative terminal side in the semiconductor module are opposite and parallel. Similarly, the direction of the current flowing through the negative electrode branch and the direction of the current flowing from the positive terminal side to the negative terminal side in the semiconductor module are opposite and parallel. Compared to the configuration in which the positive electrode bus bar and the negative electrode bus bar are arranged in the protruding direction of the positive electrode terminal and the negative electrode terminal and arranged to face each other, either the positive electrode bus bar or the negative electrode bus bar is separated from the semiconductor module. There is no need to place them. Therefore, compared to the configuration in which the positive electrode bus bar and the negative electrode bus bar are arranged with respect to the protruding direction of the positive electrode terminal and the negative electrode terminal and arranged so as to face each other, both the positive electrode branch portion and the negative electrode branch portion are arranged close to the semiconductor module. Accordingly, the reduction in mutual inductance between the positive electrode branch and the negative electrode branch and the semiconductor module can be more effectively realized.

  Therefore, according to the first aspect of the present invention, it is possible to achieve both a reduction in mutual inductance between the positive electrode bus bar and the negative electrode bus bar and a reduction in mutual inductance between the positive electrode bus bar and the negative electrode bus bar and the semiconductor module. .

  Invention of Claim 2 is the power converter device of Claim 1, Comprising: The positive electrode branch part protrudes from the edge part by the side of a semiconductor module among positive electrode main-body parts, and is formed in the negative electrode branch. The portion is characterized by being formed so as to protrude from the end portion closest to the semiconductor module among the negative electrode main body portion.

  If comprised in this way, the structure which formed the positive electrode branch part protruded from the position different from the most semiconductor module side of a positive electrode main-body part, and the negative electrode branch part protruded and formed from the position most different from the semiconductor module side of a negative electrode main-body part, and In comparison, both the positive electrode branch and the negative electrode branch can be disposed close to the semiconductor module.

  Therefore, according to the second aspect of the present invention, the positive electrode branch portion is formed so as to protrude from a position different from the semiconductor module side of the positive electrode main body portion, and the negative electrode branch portion is formed from a position different from the semiconductor module side of the negative electrode main body portion. Compared with the projecting configuration, the reduction in mutual inductance between the positive and negative bus bars and the semiconductor module can be more effectively realized.

  Invention of Claim 3 is the power converter device of Claim 1 or 2, Comprising: It arrange | positions so that the main surface with the largest area may oppose a semiconductor module among positive electrode branches, A negative electrode Of the branches, the main surface having the largest area is arranged to face the semiconductor module.

  If comprised in this way, compared with the structure which arrange | positions a surface different from the main surface with the largest area among a positive electrode branch part and a negative electrode branch part so as to oppose a semiconductor module, the positive electrode branch part which opposes a semiconductor module In addition, the surface area of the negative electrode branch can be increased. Here, the decrease in mutual inductance caused by the current flowing in parallel in the opposite direction is proportional to the amount of current flowing when the distance between the currents flowing in the opposite direction is constant.

  Therefore, according to the third aspect of the present invention, the positive electrode bus bar and the negative electrode branch portion are compared with the configuration in which the surface different from the main surface having the largest area is disposed so as to face the semiconductor module. And the fall of the mutual inductance between a negative electrode bus-bar and a semiconductor module can be implement | achieved more effectively.

  Invention of Claim 4 is the power converter device of Claim 1 thru | or 3 or any one, Comprising: A positive electrode bus bar and a negative electrode bus bar connect the front-end | tip part of a positive electrode terminal, and the front-end | tip part of a negative electrode terminal. It is characterized by being arranged on the semiconductor module side from the connected second virtual line.

  According to the invention of claim 4, the positive electrode bus bar and the negative electrode bus bar are compared with the configuration in which the positive electrode bus bar and the negative electrode bus bar are arranged on the side opposite to the semiconductor module from the straight line connecting the tip portion of the positive electrode terminal and the tip portion of the negative electrode terminal. The physique of the power converter with respect to the protruding direction of the terminal and the negative electrode terminal can be reduced.

  Invention of Claim 5 is the power converter device of Claim 1 thru | or 4 or any one, Comprising: The laminated body by which the semiconductor module and the cooler were laminated | stacked alternately, and parallel connection to a power supply And a smoothing capacitor connected in parallel to the semiconductor module and smoothing the output of the power supply, wherein the smoothing capacitor is arranged at the end of the laminate in the stacking direction.

  If comprised in this way, the smoothing capacitor is arrange | positioned at one edge part of the lamination direction of a laminated body. Therefore, the positive electrode bus bar and the negative electrode bus bar can be connected to the smoothing capacitor only by extending the positive electrode bus bar and the negative electrode bus bar in the stacking direction of the laminate. That is, the positive electrode bus bar, the negative electrode bus bar, and the smoothing capacitor can be connected in a state where the positive electrode main body portion and the negative electrode main body portion face each other.

  Therefore, according to the invention described in claim 5, it is possible to easily realize the connection between the positive electrode bus bar and the negative electrode bus bar and the smoothing capacitor as compared with the configuration in which the smoothing capacitor is arranged in a direction orthogonal to the stacking direction of the laminate. And the mutual inductance between a positive electrode main-body part and a negative electrode main-body part can be reduced more.

The circuit diagram which shows the power converter device in a present Example. The top view of a power converter device. The front view of a semiconductor module. The perspective view of a positive electrode bus bar and a negative electrode bus bar. The perspective view of the positive electrode bus bar and negative electrode bus bar in another Example.

Example 1
Embodiments of the present invention will be described below with reference to the drawings. In the description after FIG. 1, the same components are denoted by the same reference numerals and description thereof is omitted.

  FIG. 1 is a diagram illustrating a circuit diagram of the power conversion device 1. A power conversion device 1 shown in FIG. 1 is an inverter for a car having a boost converter unit 10 and an inverter unit 11. The power conversion device 1 is used to generate a drive current that energizes an AC motor 12 that is a power source of an electric vehicle, a hybrid vehicle, or the like.

  The boost converter unit 10 is connected to a power source 13, and a filter capacitor 14 is connected between the boost converter unit 10 and the power source 13. The filter capacitor 14 absorbs a ripple current included in the power supply current input from the DC power supply 13 to the boost converter unit 10 and stabilizes the power supply current.

  The step-up converter unit 10 includes a reactor coil unit 15, two semiconductor modules 16 </ b> A including an IGBT (Insulated Gate Bipolar Transistor) element 161 </ b> A and a diode 162 </ b> A, and boosts an input voltage. The reactor coil unit 15 is connected to the power supply 13 side. The IGBT element 161A of the boost converter unit 10 is connected to the AC motor 12 side of the reactor coil unit 15, and a pair of diodes 162A is connected to each IGBT element 161A. The IGBT element 161A performs a switching operation under the control of a control unit (not shown).

  A smoothing capacitor 17 is connected between the IGBT element 161 </ b> A of the boost converter unit 10 and the inverter unit 11. The smoothing capacitor 17 smoothes the output current of the boost converter unit 10 that becomes an intermittent current, and causes the inverter unit 11 to input a stable DC current.

  The inverter unit 11 includes six semiconductor modules 16B each including an IGBT element 161B and a diode 162B. The IGBT element 161B of the inverter unit 11 is connected to the smoothing capacitor 17, and a pair of diodes 162B is connected to each IGBT element 161B. The IGBT element 161B performs a switching operation under the control of a control unit (not shown).

  Further, a three-phase AC motor 12 is connected to the inverter unit 11, and the drive current generated by the inverter unit 11 is supplied to the AC motor 12.

  FIG. 2 shows a plan view of the power conversion device 1. FIG. 3 shows a front view of the semiconductor module 16. FIG. 4 is a perspective view of the positive electrode bus bar 3 and the negative electrode bus bar 4.

  As shown in FIG. 2, the power conversion device 1 includes a cooler 2, a connection pipe 21, a refrigerant introduction pipe 22, a refrigerant discharge pipe 23, a semiconductor module 16, a smoothing capacitor 17, a positive electrode bus bar 3, and a negative electrode bus bar 4. ing.

  The cooler 2 is disposed so as to sandwich the semiconductor module 16 from both sides. As a whole, a laminated body in which the coolers 2 and the rows of the semiconductor modules 16 are alternately laminated is configured. The laminated body is configured such that each positive electrode terminal 5 and each negative electrode terminal 6 of a semiconductor module 16 and a smoothing capacitor 17 described later are arranged in a substantially straight line. Here, “substantially linear” does not mean a strict straight line, but also includes a substantially straight line as a whole. All the semiconductor modules 16 are in a state where both surfaces thereof are sandwiched by the cooler 2. Adjacent coolers 2 are connected by connecting pipes 21 at both ends in the longitudinal direction of the coolers 2. The cooler 2 disposed at one end of the stack in the stacking direction includes a coolant introduction pipe 22 for introducing the coolant into the entire stack of the cooler 2 and a coolant for discharging the coolant from the entire stack. A discharge pipe 23 is arranged. Further, a smoothing capacitor 17 is disposed at an end portion in the stacking direction of the stacked body on the side where the coolant introduction tube 22 and the coolant discharge tube 23 are disposed. The smoothing capacitor 17 includes a positive electrode terminal 5 connected to the positive electrode bus bar 3 and a negative electrode terminal 6 connected to the negative electrode bus bar 4. In FIG. 2, the smoothing capacitor 17 is surrounded on three sides by the cooler 2, the refrigerant introduction pipe 22, and the refrigerant discharge pipe 23.

  With this configuration, the cooling medium introduced from the refrigerant introduction pipe 22 is distributed to the plurality of coolers 2 via the connection pipe 21. The cooling medium flows from the end on the refrigerant introduction pipe 22 side in the longitudinal direction of each cooler 2 to the end on the refrigerant discharge pipe 23 side in the longitudinal direction of each cooler 2. At this time, the cooling medium exchanges heat with the semiconductor module 16 disposed in close contact with each cooler 2. The cooling medium after the heat exchange reaches the refrigerant discharge pipe 23 via the connecting pipe 21 and is discharged.

  Cooling media include natural refrigerants such as water and ammonia, water mixed with ethylene glycol antifreeze, fluorocarbon refrigerants such as fluorinate, chlorofluorocarbon refrigerants such as HCFC123 and HFC134a, alcohol refrigerants such as methanol and alcohol, A refrigerant such as a ketone-based refrigerant such as acetone can be used.

  As shown in FIG. 3, the semiconductor module 16 includes an IGBT element 161, a diode 162, a main body 163, a positive terminal 5, a negative terminal 6, an output terminal 7, and a signal terminal 8.

  The semiconductor module 16 includes two IGBT elements 161 and two diodes 162, respectively. The IGBT element 161 and the diode 162 are molded as a whole to form a rectangular main body 163. The semiconductor module 16 is connected to a signal terminal 8 connected to a control circuit (not shown) for controlling the semiconductor module 16, a positive terminal 5 and a negative terminal 6 for inputting / outputting current to / from the semiconductor module 16, and an AC motor 12. Output terminal 7. The positive terminal 5, the negative terminal 6, and the output terminal 7 and the signal terminal 8 are formed so as to protrude in directions different by 180 degrees. The main surfaces of the positive electrode terminal 5, the negative electrode terminal 6, and the output terminal 7 are formed so as to face the same direction. The positive electrode terminal 5, the negative electrode terminal 6, and the output terminal 7 are arranged so as to be arranged substantially linearly with respect to the longitudinal direction of the main body 163.

  Next, the principal part of Example 1 is demonstrated.

  As shown in FIG. 4, the positive electrode bus bar 3 includes a positive electrode main body portion 31, a positive electrode external terminal 32, and a positive electrode branch portion 33.

  The positive electrode main body 31 is formed in a linear plate shape. As shown in FIGS. 3 and 4, the main surface of the positive electrode main body 3 constitutes a pair of main surfaces having the largest area in the positive electrode bus bar 3. The positive electrode main body 31 is located between the positive electrode terminal 5 and the negative electrode terminal 6 and in the direction of a straight line (hereinafter referred to as a first virtual line) connecting the positive electrode terminal 5 and the negative electrode terminal 6. It is arranged with the main surface facing. Further, the positive electrode terminal 5 and the negative electrode terminal 6 are arranged so as to extend along the arrangement direction of the semiconductor modules 16.

  In addition, of the both ends in the short direction perpendicular to the longitudinal direction of the main surface of the positive electrode main body 31, the end on the anti-semiconductor module 16 side connects the tip of the positive terminal 5 and the tip of the negative terminal 6. The second imaginary line (see the broken line L in FIG. 3) is arranged on the semiconductor module 16 side.

  The positive external terminal 32 is a part for connecting to the power supply 13. The positive external terminal 32 is bent at a right angle from one longitudinal end of the main surface of the positive electrode main body 31. For this reason, the positive electrode main body 31 and the positive electrode external terminal 32 are formed in an L shape as a whole. In Example 1, as shown in FIG. 2, it arrange | positions so that the positive electrode external terminal 32 may be located in the edge part side of the lamination direction of the laminated body in which the refrigerant | coolant inlet tube 22 and the refrigerant | coolant exhaust pipe 23 are located. . In FIG. 2, the connection structure between the positive external terminal 32 and the power source 13 is omitted.

  The positive electrode branch portion 33 is a portion for connecting the positive electrode main body portion 31 and the positive electrode terminal 5. The positive electrode branch portion 33 is formed so as to protrude from the positive electrode main body portion 31. Specifically, it is formed with respect to the direction in which the positive electrode terminal 5 is disposed with reference to the positive electrode main body 31. The positive electrode branch portion 33 is formed in a straight plate shape, and the main surface of the positive electrode branch portion 33 faces the semiconductor module 16. Further, the protruding direction of the positive electrode branch portion 33 and the first imaginary line are substantially parallel. As shown in FIG. 3, the positive electrode branch portion 33 of Example 1 is formed so as to protrude from the end portion of the positive electrode main body portion 31 closest to the semiconductor module 16.

  A positive electrode fastening portion 331 connected to the positive electrode terminal 5 is formed in the positive electrode branch portion 33. In the first embodiment, the positive electrode fastening portion 331 is formed so as to protrude from the end portion of the positive electrode branch portion 33 toward the anti-semiconductor module 16 so that the main surface of the positive electrode fastening portion 331 faces the same direction as the main surface of the positive electrode terminal 5. Therefore, it arrange | positions so that the main surface of the positive electrode terminal 5 and the main surface of the positive electrode fastening part 33 may touch, and the front-end | tip of the positive electrode fastening part 331 and the front-end | tip of the positive electrode terminal 5 are connected.

  As shown in FIG. 4, the negative electrode bus bar 4 includes a negative electrode main body portion 41, a negative electrode external terminal 42, and a negative electrode branch portion 43. The configurations of the negative electrode main body portion 41, the negative electrode external terminal 42, and the negative electrode branch portion 43 of the negative electrode bus bar 4 are the same as the configurations of the positive electrode main body portion 31, the positive electrode external terminal 32, and the positive electrode branch portion 33 of the positive electrode bus bar 3.

  The negative electrode main body 41 is disposed between the positive electrode terminal 5 and the negative electrode terminal 6 and with the main surface of the negative electrode main body 41 facing the direction of the first imaginary line. Further, the positive electrode terminal 5 and the negative electrode terminal 6 are arranged so as to extend along the arrangement direction of the semiconductor modules 16. The positive electrode main body 31 and the negative electrode main body 41 are arranged side by side with respect to the direction of the first imaginary line, and the main surface of the positive electrode main body 3 and the main surface of the negative electrode main body 41 face each other. In Example 1, as shown in FIG. 3, the main surface of the positive electrode main body 33 and the main surface of the negative electrode main body 43 are arranged so as to face each other.

  The shapes of the negative electrode external terminal 42 and the negative electrode branch portion 43 are symmetrical to those of the positive electrode external terminal 32 and the positive electrode branch portion 33. The negative electrode branch portion 43 is formed in a straight plate shape, and the main surface of the negative electrode branch portion 43 faces the semiconductor module 16. Further, the protruding direction of the negative electrode branch portion 43 and the first imaginary line are substantially parallel. Therefore, as shown in FIG. 3, the positive electrode branch portion 33 and the negative electrode branch portion 43 are formed in the same plane. The negative electrode branch 43 is formed so as to protrude from the end of the negative electrode main body 41 closest to the semiconductor module 16. Therefore, the distance from the positive electrode branch portion 33 to the semiconductor module 16 and the distance from the negative electrode branch portion 43 to the semiconductor module 16 are the same.

  Next, the effect of Example 1 is demonstrated.

  When a current is supplied from the power supply 13 to the power conversion device 1 in the above configuration, the power supply 13, the positive external terminal 32, the positive electrode main body part 31, the positive electrode branch part 33, the positive electrode fastening part 331, the positive electrode terminal 5, the semiconductor module 16, A current path including the negative electrode terminal 6, the negative electrode fastening portion 431, the negative electrode branch portion 43, the negative electrode main body portion 41, the negative electrode external terminal 42, and the power source 13 is formed. Here, in the semiconductor module 16, a current flows in a direction substantially parallel to the direction from the positive electrode terminal 5 to the negative electrode terminal 6, that is, the direction of the first virtual line. The broken line shown in FIG. 3 schematically shows the flow of current, and the arrow indicates the direction of current. The positive electrode main body 31 and the negative electrode main body 41 are arranged so as to face each other in the direction of the first imaginary line. Therefore, the directions of the currents flowing through the positive electrode main body 31 and the negative electrode main body 41 are opposite and parallel to each other (see FIG. 3, dotted circle C1), and the magnetic fields generated around the positive electrode main body 31 and the negative electrode main body 41 are canceled out. can do. Therefore, a reduction in mutual inductance between the positive electrode main body 31 and the negative electrode main body 41 can be realized.

  In addition, the direction of the current flowing through the positive electrode branch portion 33 and the direction of the current flowing through the semiconductor module 16 from the positive electrode terminal 5 side to the negative electrode terminal 6 side are opposite and parallel to each other (see FIG. 3, dotted circle C2). Similarly, the direction of the current flowing through the negative electrode branch portion 43 and the direction of the current flowing through the semiconductor module 16 from the positive electrode terminal 5 side to the negative electrode terminal 6 side are opposite and parallel (see dotted line circle C3 in FIG. 3). . The configuration of the first embodiment is different from the configuration in which the positive electrode bus bar 3 and the negative electrode bus bar 4 are arranged to face each other in the protruding direction of the positive electrode terminal 5 and the negative electrode terminal 6. It is not necessary to arrange one of them apart from the semiconductor module 16. Therefore, compared with the structure which arrange | positions the positive electrode bus bar 3 and the negative electrode bus bar 4 with respect to the protrusion direction of the positive electrode terminal 5 and the negative electrode terminal 6, and arrange | positions so that it may mutually face, both the positive electrode branch part 33 and the negative electrode branch part 43 are included. The semiconductor module 16 can be disposed close to the semiconductor module 16, and a reduction in mutual inductance between the positive electrode branch portion 33 and the negative electrode branch portion 43 and the semiconductor module 16 can be more effectively realized. Therefore, a reduction in mutual inductance between the positive electrode bus bar 3 and the negative electrode bus bar 4 and a reduction in mutual inductance between the positive electrode bus bar 3 and the negative electrode bus bar 4 and the semiconductor module 16 can be achieved.

  In the above configuration, the positive electrode branch portion 33 is formed so as to protrude from the end portion of the positive electrode main body portion 31 closest to the semiconductor module 16, and the negative electrode branch portion 43 of the negative electrode main body portion 41 is closest to the semiconductor module 16 side. Therefore, both the positive electrode branch portion 33 and the negative electrode branch portion 43 can be disposed close to the semiconductor module 16. Therefore, the positive electrode branch portion 33 is formed so as to protrude from a position different from the semiconductor module 16 side of the positive electrode main body portion 31, and the negative electrode branch portion 43 is formed so as to protrude from a position different from the semiconductor module 16 side of the negative electrode main body portion 41. As compared with the above, the reduction of mutual inductance between the positive electrode bus bar 3 and the negative electrode bus bar 4 and the semiconductor module 16 can be more effectively realized.

  Further, in the above configuration, the main surface having the largest area of the positive electrode branch portion 33 is disposed so as to face the semiconductor module 16, and the main surface having the largest area among the negative electrode branch portions 43 and the semiconductor module 16. It arrange | positions so that it may oppose. Therefore, compared with the structure which arrange | positions the surface different from the main surface with the largest area among the positive electrode branch part 33 and the negative electrode branch part 43 so that the semiconductor module 16 may be opposed, the positive electrode branch part 33 which opposes the semiconductor module 16. In addition, the surface area of the negative electrode branch portion 43 can be increased. Here, the decrease in mutual inductance caused by the current flowing in parallel in the opposite direction is proportional to the amount of current flowing when the distance between the currents flowing in the opposite direction is constant. Therefore, compared with the structure which arrange | positions the surface different from the main surface with the largest area among the positive electrode branch part 33 and the negative electrode branch part 43 so as to oppose the semiconductor module 16, the positive electrode bus bar 3, the negative electrode bus bar 4, and a semiconductor module It is possible to more effectively realize a reduction in mutual inductance between the two.

  Moreover, in the said structure, the edge part by the side of the anti-semiconductor module 16 is arrange | positioned from the 2nd virtual line (L) to the semiconductor module 16 side among the transversal directions orthogonal to the longitudinal direction of the main surface of the positive electrode main-body part 31. Has been. Similarly, in the short direction perpendicular to the longitudinal direction of the main surface of the negative electrode main body 41, the end on the anti-semiconductor module 16 side is disposed on the semiconductor module 16 side with respect to the second virtual line (L). That is, the entire positive electrode bus bar 3 and negative electrode bus bar 4 are disposed closer to the semiconductor module 16 than the second virtual line (L). Therefore, compared with the structure which arrange | positions the positive electrode bus bar 3 and the negative electrode bus bar 4 in the anti-semiconductor module 16 side from the 2nd virtual line (L), the physique of the power converter device 1 with respect to the protrusion direction of the positive electrode terminal 5 and the negative electrode terminal 6 is shown. It can be downsized.

  Moreover, in the said structure, the smoothing capacitor 17 is arrange | positioned at one edge part of the lamination direction of a laminated body. If comprised in this way, the positive electrode bus bar 3 and the negative electrode bus bar 4, and the smoothing capacitor 17 can be connected only by extending the positive electrode bus bar 3 and the negative electrode bus bar 4 in the lamination direction of a laminated body. In other words, the positive electrode bus bar 3 and the negative electrode bus bar 4 can be connected to the smoothing capacitor 17 with the positive electrode main body 31 and the negative electrode main body 41 facing each other. Therefore, compared to the configuration in which the smoothing capacitor 17 is arranged in a direction orthogonal to the stacking direction of the laminate, the positive electrode bus bar 3, the negative electrode bus bar 4, and the smoothing capacitor 17 can be easily connected, and the positive electrode main body 31. And the negative inductance 41 can further reduce the mutual inductance.

  As mentioned above, although the preferable Example of this invention was described, this invention is not limited to the said Example, As long as it exists in the technical scope of this invention, you may deform | transform as follows.

  In the above embodiment, out of the short direction perpendicular to the longitudinal direction of the main surface of the positive electrode main body 31, the short side orthogonal to the end of the anti-semiconductor module 16 side and the long surface of the main surface of the negative electrode main body 41. Of the directions, the end on the anti-semiconductor module 16 side may be arranged on the anti-semiconductor module 16 side from the second virtual line (L).

  In the above embodiment, the positive electrode branch portion 33 and the negative electrode branch portion 43 may be arranged so that the surface different from the main surface having the largest area faces the semiconductor module 16.

  In the above embodiment, the positive electrode branch portion 33 may be formed so as to protrude from between the end on the semiconductor module 16 side and the end on the most anti-semiconductor module side of the positive electrode main body 31. Further, the negative electrode branch 43 may be formed so as to protrude from between the end of the negative electrode main body 41 closest to the semiconductor module 16 and the end closest to the anti-semiconductor module.

  In the above embodiment, the positive electrode branch portion 33 and the negative electrode branch portion 43 are formed on the same plane, but may be formed on different surfaces. For example, as shown in FIG. 5, the positive electrode branch portions 33 may be alternately formed from both one end portion and the other end portion in the short direction perpendicular to the longitudinal direction of the positive electrode main body portion 31. Similarly, the negative electrode branch portions 43 may be alternately formed from both one end portion and the other end portion in the short direction perpendicular to the longitudinal direction of the negative electrode main body portion 41.

  -In the said Example, you may arrange | position so that a part of positive electrode main-body part 31 and the negative electrode main-body part 41 may mutually face.

  In the above embodiment, the positive electrode main body 31 and the negative electrode main body 41 may have different shapes. For example, the surface area of the main surface of the positive electrode main body 31 and the surface area of the negative electrode main body 41 may be different sizes.

  In the above embodiment, the positive electrode branch portion 33 and the negative electrode branch portion 43 may have different shapes. For example, the length of the positive electrode branch portion 33 in the direction of the positive electrode terminal 5 and the length of the negative electrode branch portion 43 in the direction of the negative electrode terminal 6 may be different.

  -In the said Example, you may arrange | position the smoothing capacitor 17 inside the laminated body instead of the edge part of the laminated direction of a laminated body. Moreover, you may arrange | position in the direction orthogonal to the lamination direction of a laminated body.

  In the above embodiment, the semiconductor module 16 may incorporate one IGBT element 161 and one diode 162, three each, or six each.

DESCRIPTION OF SYMBOLS 1 Power converter 17 Smoothing capacitor 3 Positive electrode bus bar 31 Positive electrode main body part 32 Positive electrode external terminal 33 Positive electrode branch part 331 Positive electrode fastening part 4 Negative electrode bus bar 41 Negative electrode main body part 42 Negative electrode external terminal 43 Negative electrode branch part 431 Negative electrode fastening part 5 Positive electrode terminal 6 Negative electrode Terminal 7 Output terminal 8 Signal terminal

Claims (5)

A plurality of semiconductor modules (16) each including a semiconductor element and having a positive terminal (5) and a negative terminal (6) projecting in the same direction;
A cooler (2) for cooling the semiconductor module (16);
A power converter (1) comprising a positive bus bar (3) and a negative bus bar (4) for supplying power from a power source (13) to the semiconductor module (16),
The plurality of semiconductor modules (16) are arranged such that the positive terminals (5) and the negative terminals (6) are arranged in a substantially straight line.
The positive electrode bus bar (3) is between the positive electrode terminal (5) and the negative electrode terminal (6), and is disposed along the alignment direction of the semiconductor modules (16). ,
When a straight line connecting the positive electrode terminal (5) and the negative electrode terminal (6) is a first imaginary line, the first imaginary line is substantially parallel to the positive electrode body (31) and the positive electrode terminal (5). A positive electrode branch (33) arranged in the direction),
The negative electrode bus bar (4) is between the positive electrode terminal (5) and the negative electrode terminal (6), and is disposed along the alignment direction of the semiconductor modules (16), ,
A negative branch (43) disposed substantially in parallel with the first imaginary line and arranged in the direction from the negative electrode main body (41) to the negative terminal (6),
The positive electrode main body (31) and the negative electrode main body (41) are arranged side by side with respect to the direction of the first imaginary line, and are arranged to face each other,
The power converter device (1) characterized by these. The positive electrode branch (33) is formed so as to protrude from the end on the semiconductor module (16) side of the positive electrode main body (31),
The negative electrode branch (43) is formed so as to protrude from the end of the negative electrode main body (41) closest to the semiconductor module (16),
The power converter (1) according to claim 1, characterized in that: Of the positive electrode branch (33), the main surface having the largest area is arranged to face the semiconductor module (16),
Among the negative electrode branches (43), the main surface having the largest area is arranged so as to face the semiconductor module (16).
The power converter device (1) according to claim 1 or 2, characterized by the above. The positive electrode bus bar (3) and the negative electrode bus bar (4) are connected to the semiconductor module by a second imaginary line (L) connecting the tip of the positive terminal (5) and the tip of the negative terminal (6). (16) It is arranged on the side,
The power converter device (1) according to any one of claims 1 to 3, characterized by: A laminate in which the semiconductor module (16) and the cooler (2) are alternately laminated;
A smoothing capacitor (17) connected in parallel to the power supply (13), connected in parallel to the semiconductor module (16), and smoothing the output of the power supply (13);
The smoothing capacitor (17) is disposed at an end of the laminate in the stacking direction;
The power converter device (1) according to any one of claims 1 to 4, characterized by: