CN111244244A - 一种大功率led芯片及其制作方法 - Google Patents
一种大功率led芯片及其制作方法 Download PDFInfo
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- CN111244244A CN111244244A CN202010209033.2A CN202010209033A CN111244244A CN 111244244 A CN111244244 A CN 111244244A CN 202010209033 A CN202010209033 A CN 202010209033A CN 111244244 A CN111244244 A CN 111244244A
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- gallium nitride
- type gallium
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000010410 layer Substances 0.000 claims abstract description 498
- 238000002161 passivation Methods 0.000 claims abstract description 59
- 230000004888 barrier function Effects 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- 229910002601 GaN Inorganic materials 0.000 claims description 111
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 73
- 238000000151 deposition Methods 0.000 claims description 40
- 229910052804 chromium Inorganic materials 0.000 claims description 21
- 229910052719 titanium Inorganic materials 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 20
- 238000001704 evaporation Methods 0.000 claims description 20
- 229910052737 gold Inorganic materials 0.000 claims description 18
- 229910052594 sapphire Inorganic materials 0.000 claims description 17
- 239000010980 sapphire Substances 0.000 claims description 17
- 229910052697 platinum Inorganic materials 0.000 claims description 16
- 229910008599 TiW Inorganic materials 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 239000007771 core particle Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 238000009616 inductively coupled plasma Methods 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 229910052718 tin Inorganic materials 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 10
- 230000031700 light absorption Effects 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 238000009834 vaporization Methods 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 21
- 238000000137 annealing Methods 0.000 description 12
- 229910019080 Mg-H Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000003213 activating effect Effects 0.000 description 5
- 238000003491 array Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
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- 238000003892 spreading Methods 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910004541 SiN Inorganic materials 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000000197 pyrolysis Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
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CN202010209033.2A CN111244244B (zh) | 2020-03-23 | 2020-03-23 | 一种大功率led芯片及其制作方法 |
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CN202010209033.2A CN111244244B (zh) | 2020-03-23 | 2020-03-23 | 一种大功率led芯片及其制作方法 |
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CN111244244A true CN111244244A (zh) | 2020-06-05 |
CN111244244B CN111244244B (zh) | 2021-03-30 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112271241A (zh) * | 2020-10-30 | 2021-01-26 | 华引芯(武汉)科技有限公司 | 一种大功率led芯片的制作工艺及led芯片 |
CN113345993A (zh) * | 2021-05-31 | 2021-09-03 | 厦门市三安光电科技有限公司 | 一种发光二极管及其制备方法 |
CN113421953A (zh) * | 2021-06-24 | 2021-09-21 | 马鞍山杰生半导体有限公司 | 深紫外发光二极管及其制作方法 |
CN114447176A (zh) * | 2022-01-28 | 2022-05-06 | 上海芯元基半导体科技有限公司 | 垂直结构的薄膜led芯片、微型led阵列及其制备方法 |
CN117253902A (zh) * | 2023-11-17 | 2023-12-19 | 盐城鸿石智能科技有限公司 | 一种亮度可调的MicroLED及其制备方法 |
WO2024087087A1 (zh) * | 2022-10-27 | 2024-05-02 | 厦门三安光电有限公司 | 发光二极管及发光装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7358539B2 (en) * | 2003-04-09 | 2008-04-15 | Lumination Llc | Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts |
CN108389954A (zh) * | 2018-01-11 | 2018-08-10 | 河源市众拓光电科技有限公司 | 一种超结构led芯片及其制备方法 |
CN108389952A (zh) * | 2018-02-28 | 2018-08-10 | 华南理工大学 | 一种无漏电mesa切割道3d通孔超结构led芯片及其制备方法 |
CN109713101A (zh) * | 2018-12-28 | 2019-05-03 | 映瑞光电科技(上海)有限公司 | GaN基LED垂直结构芯片及其制备方法 |
-
2020
- 2020-03-23 CN CN202010209033.2A patent/CN111244244B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7358539B2 (en) * | 2003-04-09 | 2008-04-15 | Lumination Llc | Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts |
CN108389954A (zh) * | 2018-01-11 | 2018-08-10 | 河源市众拓光电科技有限公司 | 一种超结构led芯片及其制备方法 |
CN108389952A (zh) * | 2018-02-28 | 2018-08-10 | 华南理工大学 | 一种无漏电mesa切割道3d通孔超结构led芯片及其制备方法 |
CN109713101A (zh) * | 2018-12-28 | 2019-05-03 | 映瑞光电科技(上海)有限公司 | GaN基LED垂直结构芯片及其制备方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112271241A (zh) * | 2020-10-30 | 2021-01-26 | 华引芯(武汉)科技有限公司 | 一种大功率led芯片的制作工艺及led芯片 |
CN112271241B (zh) * | 2020-10-30 | 2022-04-22 | 华引芯(武汉)科技有限公司 | 一种大功率led芯片的制作工艺及led芯片 |
CN113345993A (zh) * | 2021-05-31 | 2021-09-03 | 厦门市三安光电科技有限公司 | 一种发光二极管及其制备方法 |
CN113421953A (zh) * | 2021-06-24 | 2021-09-21 | 马鞍山杰生半导体有限公司 | 深紫外发光二极管及其制作方法 |
CN113421953B (zh) * | 2021-06-24 | 2022-12-13 | 马鞍山杰生半导体有限公司 | 深紫外发光二极管及其制作方法 |
CN114447176A (zh) * | 2022-01-28 | 2022-05-06 | 上海芯元基半导体科技有限公司 | 垂直结构的薄膜led芯片、微型led阵列及其制备方法 |
WO2024087087A1 (zh) * | 2022-10-27 | 2024-05-02 | 厦门三安光电有限公司 | 发光二极管及发光装置 |
CN117253902A (zh) * | 2023-11-17 | 2023-12-19 | 盐城鸿石智能科技有限公司 | 一种亮度可调的MicroLED及其制备方法 |
CN117253902B (zh) * | 2023-11-17 | 2024-03-22 | 盐城鸿石智能科技有限公司 | 一种亮度可调的MicroLED及其制备方法 |
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CN111244244B (zh) | 2021-03-30 |
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Denomination of invention: A high power LED chip and its fabrication method Effective date of registration: 20220620 Granted publication date: 20210330 Pledgee: Guanggu Branch of Wuhan Rural Commercial Bank Co.,Ltd. Pledgor: HUAYINXIN (WUHAN) TECHNOLOGY CO.,LTD. Registration number: Y2022420000170 |
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Denomination of invention: A high-power LED chip and its manufacturing method Effective date of registration: 20231026 Granted publication date: 20210330 Pledgee: Guanggu Branch of Wuhan Rural Commercial Bank Co.,Ltd. Pledgor: HUAYINXIN (WUHAN) TECHNOLOGY CO.,LTD. Registration number: Y2023980062852 |
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