CN111244233A - Led制备工艺 - Google Patents
Led制备工艺 Download PDFInfo
- Publication number
- CN111244233A CN111244233A CN202010077300.5A CN202010077300A CN111244233A CN 111244233 A CN111244233 A CN 111244233A CN 202010077300 A CN202010077300 A CN 202010077300A CN 111244233 A CN111244233 A CN 111244233A
- Authority
- CN
- China
- Prior art keywords
- buffer layer
- layer
- temperature
- gallium nitride
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 24
- 229910002601 GaN Inorganic materials 0.000 claims description 86
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 57
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 22
- 230000004888 barrier function Effects 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- 239000011777 magnesium Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 abstract description 17
- 230000015572 biosynthetic process Effects 0.000 abstract description 13
- 230000007547 defect Effects 0.000 abstract description 5
- 238000002425 crystallisation Methods 0.000 abstract description 3
- 230000008025 crystallization Effects 0.000 abstract description 3
- 238000001816 cooling Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 14
- 229910021529 ammonia Inorganic materials 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 230000035882 stress Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000009191 jumping Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010077300.5A CN111244233B (zh) | 2020-01-26 | 2020-01-26 | Led制备工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010077300.5A CN111244233B (zh) | 2020-01-26 | 2020-01-26 | Led制备工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111244233A true CN111244233A (zh) | 2020-06-05 |
CN111244233B CN111244233B (zh) | 2021-09-24 |
Family
ID=70865718
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010077300.5A Active CN111244233B (zh) | 2020-01-26 | 2020-01-26 | Led制备工艺 |
Country Status (1)
Country | Link |
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CN (1) | CN111244233B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113363362A (zh) * | 2021-06-02 | 2021-09-07 | 福建兆元光电有限公司 | 一种在衬底上生长外延结构的方法及外延结构 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101546798A (zh) * | 2008-03-26 | 2009-09-30 | 晶元光电股份有限公司 | 半导体元件 |
CN103107255A (zh) * | 2012-12-21 | 2013-05-15 | 湘能华磊光电股份有限公司 | 一种led外延片生长方法 |
CN103700743A (zh) * | 2012-09-28 | 2014-04-02 | 江苏汉莱科技有限公司 | 一种发光二极管及其缓冲层的制备方法 |
CN104347761A (zh) * | 2013-08-06 | 2015-02-11 | 甘志银 | 晶体质量可控的氮化镓薄膜外延生长方法 |
CN107086256A (zh) * | 2017-03-15 | 2017-08-22 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片的制造方法 |
CN107452845A (zh) * | 2017-08-11 | 2017-12-08 | 扬州中科半导体照明有限公司 | 一种大尺寸发光二极管外延片及其生长方法 |
-
2020
- 2020-01-26 CN CN202010077300.5A patent/CN111244233B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101546798A (zh) * | 2008-03-26 | 2009-09-30 | 晶元光电股份有限公司 | 半导体元件 |
CN103700743A (zh) * | 2012-09-28 | 2014-04-02 | 江苏汉莱科技有限公司 | 一种发光二极管及其缓冲层的制备方法 |
CN103107255A (zh) * | 2012-12-21 | 2013-05-15 | 湘能华磊光电股份有限公司 | 一种led外延片生长方法 |
CN104347761A (zh) * | 2013-08-06 | 2015-02-11 | 甘志银 | 晶体质量可控的氮化镓薄膜外延生长方法 |
CN107086256A (zh) * | 2017-03-15 | 2017-08-22 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片的制造方法 |
CN107452845A (zh) * | 2017-08-11 | 2017-12-08 | 扬州中科半导体照明有限公司 | 一种大尺寸发光二极管外延片及其生长方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113363362A (zh) * | 2021-06-02 | 2021-09-07 | 福建兆元光电有限公司 | 一种在衬底上生长外延结构的方法及外延结构 |
CN113363362B (zh) * | 2021-06-02 | 2023-08-25 | 福建兆元光电有限公司 | 一种在衬底上生长外延结构的方法及外延结构 |
Also Published As
Publication number | Publication date |
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CN111244233B (zh) | 2021-09-24 |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
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Effective date of registration: 20210908 Address after: 224700 floors 3-4, building 3, zone a, Jingliu road smart Industrial Park, high tech Zone, Jianhu County, Yancheng City, Jiangsu Province Applicant after: Jiangsu Mingna Semiconductor Technology Co.,Ltd. Address before: 230093 central Yuefu, Hechang, Taohua Town, Feixi County, Hefei City, Anhui Province Applicant before: Sun Leilei |
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Effective date of registration: 20230927 Address after: 224300 East of Fujian Circuit and South of North 3rd Ring Road, Sheyang Economic Development Zone, Yancheng, Jiangsu Province Patentee after: Jiangsu Wenyang Semiconductor Technology Co.,Ltd. Address before: 224700 floors 3-4, building 3, zone a, Jingliu road smart Industrial Park, high tech Zone, Jianhu County, Yancheng City, Jiangsu Province Patentee before: Jiangsu Mingna Semiconductor Technology Co.,Ltd. |