CN111146131A - 一种微元件的转移装置及转移方法 - Google Patents
一种微元件的转移装置及转移方法 Download PDFInfo
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Abstract
本申请公开了一种微元件的转移装置及转移方法,所述转移装置包括:转移基板,所述转移基板包括自所述转移基板的至少一表面凸起的多个探针;控制电路,与多个所述探针连接,用于控制多个所述探针进行作业,多个所述探针独立吸附或者释放选定的微元件。通过上述方式,本申请能够在批量转移过程中实现对每一颗微元件进行单独操作。
Description
技术领域
本申请涉及显示技术领域,特别是涉及一种微元件的转移装置及转移方法。
背景技术
微发光二极管(Micro-LED)芯片是指以高密度集成在一定施主基板(例如,施主晶圆等)上的微小尺寸Micro-LED阵列,Micro-LED芯片的尺寸一般在100微米以下。在制造显示器过程中,一般需要采用静电吸附、磁力吸附、范德华力作用、真空吸附等技术将Micro-LED芯片从施主基板批量转移到目标基板。
本申请的发明人在长期研究过程中发现,现有批量转移过程中无法做到对每一颗Micro-LED芯片进行单独控制。
发明内容
本申请主要解决的技术问题是提供一种微元件的转移装置及转移方法,能够在批量转移过程中实现对每一颗微元件进行单独操作。
为解决上述技术问题,本申请采用的一个技术方案是:提供一种微元件的转移装置,所述转移装置包括:转移基板,所述转移基板包括自所述转移基板的至少一表面凸起的多个探针;控制电路,与多个所述探针连接,用于控制多个所述探针进行作业,多个所述探针独立吸附或者释放选定的微元件。
为解决上述技术问题,本申请采用的另一个技术方案是:提供一种微元件的转移方法,所述转移方法包括:提供施主基板,所述施主基板上设置有多个微元件;利用转移装置将多个所述微元件从所述施主基板转移,其中,所述转移装置包括转移基板和控制电路,所述转移基板包括自所述转移基板的至少一表面凸起的多个探针;所述控制电路与多个所述探针的一端连接,用于控制多个所述探针进行作业,多个所述探针独立吸附或者释放选定的所述微元件。
本申请的有益效果是:区别于现有技术的情况,本申请所提供的微元件的转移装置由于采用能够独立控制每个探针上产生或者去除静电吸附力的控制电路,进而可以选择性控制转移头吸附或者释放选定的微元件,以在批量转移过程中实现对每一颗微元件进行单独操作。
此外,在批量转移过程中,还可以对所有微元件进行性能测试,对于性能测试未通过的微元件,其对应的控制电路控制探针吸附该微元件并将其转移,进而达到在批量转移过程中去除不良微元件的目的。
附图说明
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。其中:
图1为本申请微元件的转移装置一实施方式的结构示意图;
图2为图1中控制电路与探针连接一实施方式的结构示意图;
图3为图1中控制电路与探针连接另一实施方式的结构示意图;
图4为图1中控制电路与探针连接另一实施方式的结构示意图;
图5为本申请微元件的转移方法一实施方式的流程示意图;
图6为图5中步骤S101-步骤S102一实施方式的结构示意图;
图7为垂直型微发光二极管芯片一实施方式的结构示意图;
图8为横向型微发光二极管芯片一实施方式的结构示意图;
图9为图5中步骤S102一实施方式的流程示意图;
图10为图9中步骤S201一实施方式的流程示意图;
图11为图10中步骤S301-S302一实施方式的结构示意图;
图12为图9中步骤S201一实施方式的流程示意图;
图13为图12中步骤S401-S402一实施方式的结构示意图;
图14为图9中步骤S203一实施方式的结构示意图;
图15为图9中步骤S203一实施方式的流程示意图;
图16为图15中步骤S501-S502一实施方式的结构示意图。
具体实施方式
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性的劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。
微元件,例如微发光二极管芯片是指以高密度集成在一定施主基板(例如,施主晶圆等)上的微小尺寸微发光二极管芯片阵列,微发光二极管芯片的尺寸一般在100微米以下。在制造显示器过程中,一般需要采用静电吸附、磁力吸附、范德华力作用、真空吸附等技术将微发光二极管芯片从施主基板批量转移到目标基板。
请参阅图1,图1为本申请微元件的转移装置一实施方式的结构示意图,该转移装置1包括转移基板10和控制电路12。
具体地,转移基板10包括自转移基板10的至少一表面100凸起的多个探针102;在一个应用场景中,探针102具有一个尖端A和一个基底B,探针102的基底B固定或者可移动设置在转移基板10的表面100上,探针102从尖端A至基底B的方向可以为直线型或者弯曲型。相邻探针102之间的间距可根据所需吸附的微元件之间的间距决定,微元件之间的间距越大,相邻探针102之间的间距也越大。在又一个应用场景中,上述多个探针102可组装在一探针卡上,该探针卡的一表面与转移基板10的一表面固定。或者,该转移基板10与多个探针102即为一探针卡。需要注意的是,本申请中所提及的转移基板10为提供静电吸附力的转移装置1上的,而并非其他专利中所提及的承载微元件的基板。
控制电路12与探针102的一端(例如,图1中的基底B)连接,用于控制多个探针102进行作业,多个探针102独立吸附或者释放选定的微元件。在本实施例中,控制电路12用于独立控制每个探针102产生或者去除静电吸附力,进而使得探针102可以吸附或者释放选定的微元件。控制电路12可以位于转移基板10内,或者位于转移基板10外部其余空间位置,本申请对此不作限定。本申请中静电吸附的原理为:当带静电的探针102靠近微元件时,由于静电感应现象,微元件靠近探针102的一端感应出与探针102相反的电荷,进而被吸引贴附至带静电的探针102上。
在一个实施例中,为实现控制电路12独立控制每个探针102产生或者去除静电吸附力,请参阅图2,图2为图1中控制电路与探针连接一实施方式的结构示意图。控制电路12包括静电产生子电路120、多个开关122、开关控制电路124,其中,静电产生子电路120用于提供产生静电所需第一电压;一个开关122对应连接一个探针102,开关122的两端分别与探针102和静电产生子电路120连接;开关控制电路124用于控制多个开关122的通断。在本实施例中,开关122可以为图2所示的三极管或者其他类型的电子元器件,开关122包括控制端K1、第一端K2和第二端K3,其中,第一端K2与静电产生子电路120连接,第二端K3与对应的探针102的一端连接;开关控制电路124用于分别连接多个开关122的每个控制端K1。开关控制电路124与多个开关122之间可以采取信号连接或者电连接的方式,本申请对此不作限定。另外,上述静电产生子电路120的设计方式可参见现有技术中任一种,在此不再详述。开关控制电路124的设计方式也可参见现有技术中任一种,在此不再详述。
在另一个实施例中,在利用本申请所提供的转移装置1批量转移微元件过程中,还可对微元件进行性能检测,以发现并去除性能检测未通过的微元件。请参阅图3,图3为图1中控制电路与探针连接另一实施方式的结构示意图。控制电路12还包括第一检测子电路120a,每一探针102(例如,图1中的探针102的基底B)与第一检测子电路120a连接,第一检测子电路120a用于向多个探针102提供测试电压/测试电流。当第一检测子电路120a向多个探针102提供测试电压/测试电流时,开关控制电路124控制开关122断开,例如,可以通过开关122的控制端K1控制第一端K2与第二端K3断开。
在上述实施例中,请再次参阅图1,本申请所提供的转移装置1还包括:导电临时基板14,导电临时基板14至少在一表面设有导电层140,用于与探针102配合向微元件的两端提供测试电压/测试电流,使微元件通电以进行性能检测。在本实施例中,导电层140的材质可以是金属,例如铝箔、铜箔等。导电层140可以为图案化结构或者非图案化结构,当导电层140为图案化结构时,其图案化的部分与微元件的电极接触。另外,在本实施例中,导电临时基板14除导电层140以外的部分可以导电也可以不导电。
上述提供的导电临时基板14与第一检测电路120a的组合适用于当微元件为垂直型微发光二极管芯片时的情况,垂直型微发光二极管芯片的两个电极位于微发光二极管芯片的相对两侧,探针102和导电临时基板14分别与两个电极接触,例如,探针102和导电临时基板14位于微发光二极管芯片的相对两侧,可以向导电临时基板14施加第一电压V1、通过第一测试子电路120a向探针102施加第二电压V2,第一电压V1与第二电压V2不同,进而达到在微发光二极管芯片产生电压差,以进行性能检测的目的。在本实施例中,垂直型微发光二极管芯片的两个电极位于相对两侧,其中一侧电极为金属,不透光,当该侧电极与导电临时基板14接触时,导电临时基板14可以透明,也可以不透明。
在其他实施例中,当微元件为其他,例如,横向型微发光二极管芯片(即,横向型微发光二极管芯片的两个电极位于同一侧)时,在利用本申请所提供的转移装置1批量转移微元件过程中,同样可以对微元件进行性能检测。请参阅图4,图4为图1中控制电路与探针连接另一实施方式的结构示意图。控制电路12包括第二检测子电路120b和第三检测子电路120c,相邻一组探针102分别与第二检测子电路120b和第三检测子电路120c连接,第二检测子电路120c和第三检测子电路120b用于与探针102配合向微元件的两个电极提供测试电压/测试电流,使微元件通电以进行性能检测。在本实施例中,也可以引入导电临时基板14作为微元件的承载基板,在微元件检测过程中,并不会利用到导电临时基板14的导电性能。在本实施例中,由于横向型微发光二极管芯片的两侧均可以透光,因此,位于横向型微发光二极管芯片一侧的导电临时基板14需透明,以便于观察横向型微发光二极管芯片的发光效果。
请参阅图5-图6,图5为本申请微元件的转移方法一实施方式的流程示意图,图6为图5中步骤S101-步骤S102一实施方式的结构示意图。本申请所提供的微元件的转移方法包括:
S101:提供施主基板2,施主基板2上设置有多个微元件3。
具体地,请参阅6a,在本实施例中,施主基板2可以是施主晶圆,微元件3可以为垂直型微发光二极管芯片或者横向型微发光二极管芯片,且上述多个微元件3可以为同种颜色(例如,红色或绿色或蓝色)或者不同颜色的微发光二极管芯片。
S102:利用转移装置1将多个微元件3从施主基板2转移,其中,转移装置1包括转移基板10和控制电路12,转移基板10包括自转移基板10的至少一表面100凸起的多个探针102;控制电路12与探针102连接,用于独立控制每个探针102进行作业,以选择性控制探针102吸附或者释放选定的微元件。
具体地,请参阅图6b,在本实施例中,转移装置1的具体结构可参见上述实施例,在此不再赘述。另外,本申请所提供的控制电路12用于独立控制每个探针102产生或者去除静电吸附力,进而使探针102吸附或者释放选定的微元件。
在一个应用场景中,请参阅图7,图7为垂直型微发光二极管芯片一实施方式的结构示意图;当微元件3为垂直型微发光二极管芯片3a,微发光二极管芯片的两个电极30a、32a分别位于微发光二极管外延层的相对两侧。上述步骤S102具体包括:利用转移装置1将多个微发光二极管芯片3a从施主基板2转移至导电临时基板,微发光二极管芯片3a的一个电极30a与探针10接触,微发光二极管芯片3a的另一个电极32a与导电临时基板的导电层接触。当然,在其他应用场景中,也可采用其他方式,例如,为降低静电产生的电压或者电流对微发光二极管芯片3a的影响,探针10可以与微发光二极管芯片3a的一个电极30a以外的部分接触。
在另一个应用场景中,请参阅图8,图8为横向型微发光二极管芯片一实施方式的结构示意图。当微元件3为横向型微发光二极管芯片3b(例如,正装或者倒装微发光二极管芯片),微发光二极管芯片3b的两个电极30b、32b位于微发光二极管外延层的同一侧。上述步骤S102具体包括:利用转移装置1将多个微发光二极管芯片3b从施主基板2转移至导电临时基板,相邻的第一探针和第二探针分别与微发光二极管芯片3b的两个电极30b、32b接触。当然,在其他应用场景中,也可采用其他方式,例如,为降低静电产生的电压或者电流对微发光二极管芯片3b的影响,探针10可以与微发光二极管芯片3b两个电极30b、32b之间的区域接触。
在其他实施例中,请参阅图9,图9为图5中步骤S102一实施方式的流程示意图,上述步骤S102具体包括:
S201:对多个微元件进行性能检测,以获得性能检测通过和性能检测未通过的多个微元件。
具体地,在一个实施例中,当微元件微垂直型有机发光二极管芯片时,请参阅图10和图11,图10为图9中步骤S201一实施方式的流程示意图,图11为图10中步骤S301-S302一实施方式的结构示意图。上述步骤S201具体包括:
S301:微发光二极管芯片3a的一个电极30a与探针102接触,微发光二极管芯片3a的另一个电极32a与导电临时基板14的导电层140接触,导电临时基板14的导电层140及与控制电路12中的第一检测子电路(图未示)连接的探针102同时施加测试电压/测试电流到微发光二极管芯片3a。
具体地,请参阅图11,在本实施例中,导电临时基板14与微发光二极管芯片3a接触的一侧设置有导电层140,导电临时基板14的其他部分可以导电也可以不导电。另外,在本实施例中,由于微发光二极管芯片3a为垂直型微发光二极管芯片,导电临时基板14可以透明或者不透明。在本实施例中,探针102和导电临时基板14的测试电压/测试电流可以均由检测子电路提供,当然,在其他实施例中,也可由两个不同的电路提供。另外,在本实施例中,上述性能检测方式为电致发光方法,在其他实施例中,也可采用其他方式对微发光二极管芯片3a的性能进行检测,例如,电磁感应方法进行检测等。
S302:若微发光二极管芯片3a性能满足预设条件,则判定微发光二极管芯片3a性能通过;否则,判定微发光二极管芯片3a性能不通过。具体地,在本实施例中,上述性能包括电学、光学、颜色等方面的任一种或者多种性能,可根据实际检测需要选择性检测上述全部或者部分性能。每一性能设置有预设条件,只有微发光二极管芯片3a的性能满足所有预设条件,才判定其性能通过。
具体地,在另一个实施例中,当微元件为横向型微发光二极管芯片时,请参阅图12和图13,图12为图9中步骤S201一实施方式的流程示意图,图13为图12中步骤S401-S402一实施方式的结构示意图。上述步骤S201具体包括:
S401:微发光二极管芯片3b的两个电极30b、32b分别与相邻的第一探针102a和第二探针102b接触,控制电路12中的第二检测子电路和第三检测子电路分别对第一探针102a和第二探针102b同时施加测试电压/测试电流。
具体地,请参阅图13,在本实施例中,可在微发光二极管芯片3b的另一侧放置导电临时基板14,导电临时基板14与微发光二极管芯片3b接触的一侧可以设置有导电层140,当然,在其他实施例中,上述导电临时基板14也可更换为不具有导电性的基板。另外,在本实施例中,由于微发光二极管芯片3b为横向型微发光二极管芯片,导电临时基板14可以透明。在该步骤中,导电临时基板14起到承载的作用,并不会利用其导电层140的导电性能,导电层140的导电性能将在后续步骤中体现。在本实施例中,可以直接采用转移装置1的探针102进行性能检测,在其他实施例中,也可采用其他装置的探针进行检测。另外,在本实施例中,上述性能检测方式为电致发光方法,在其他实施例中,也可采用其他方式对微发光二极管芯片3b的性能进行检测,例如,电磁感应方法进行检测等。
S402:若微发光二极管芯片3b性能满足预设条件,则判定微发光二极管芯片3b性能通过;否则,判定微发光二极管芯片3b性能不通过。具体地,在本实施例中,上述性能包括电学、光学、颜色等方面的任一种或者多种性能,可根据实际检测需要选择性检测上述全部或者部分性能。每一性能设置有对应的预设条件,只有微发光二极管芯片3a的性能满足所有预设条件,才判定其性能通过。
S202:将性能检测未通过的微元件去除。
具体地,在一个应用场景中,上述步骤S202具体包括:与性能检测未通过的微元件对应的控制电路中的静电产生子电路控制探针产生静电吸附力,与性能检测通过的微元件对应的控制电路中的静电产生子电路控制探针无静电吸附力,从而将性能检测未通过的微元件从临时基板吸附并转移。
S203:将性能检测通过的微元件转移至目标基板的预定位置。
具体地,在一个实施例中,当微元件为垂直型有机发光二极管芯片时,请参阅图14,图14为图9中步骤S203对应的一实施方式的结构示意图。上述步骤S203具体包括:与性能检测通过的微元件3a对应的控制电路12控制探针102产生静电吸附力,以将性能检测通过的微元件3a吸附并转移至目标基板16的预定位置后释放。
在另一个实施例中,当微元件为横向型有机发光二极管芯片时,请参阅图15-图16,图15为图9中步骤S203对应的一实施方式的流程示意图,图16为图15中步骤S501-S502对应的一实施方式的结构示意图。上述步骤S203具体包括:
S501:将性能检测通过的微发光二极管芯片3b吸附在导电临时基板14上。
具体地,在一个实施例中,可以对导电临时基板14施加第三电压,以使导电临时基板14通过静电吸附作用吸附微元件3b;在另一个实施例中,也可在导电临时基板14远离微发光二极管芯片3b一侧设置静电/磁力吸附装置,以将性能检测通过的微发光二极管芯片3b吸附在导电临时基板14上。例如,静电吸附装置可以是多个探针,多个探针在通电的条件下产生静电;又例如,磁力吸附装置可以是具有磁性的装置。
S502:将导电临时基板14吸附有微发光二极管芯片3b的一侧朝向目标基板16,并将微发光二极管芯片3b的两个电极与目标基板16的预定位置接触后释放。
在其他实施例中,上述步骤S203之后,本申请所提供的转移方法还包括:将微元件与预定位置进行邦定或者键合。在本实施例中,邦定和键合工艺可参见现有技术中任一实施方式,在此不再详述。
总而言之,区别于现有技术的情况,本申请所提供的微元件的转移装置由于采用能够独立控制每个探针上产生或者去除静电吸附力的控制电路,进而可以选择性控制转移头吸附或者释放选定的微元件,以在批量转移过程中实现对每一颗微元件进行单独操作。
此外,在批量转移过程中,还可以对所有微元件进行性能测试,对于性能测试未通过的微元件,其对应的控制电路控制探针吸附该微元件并将其转移,进而达到在批量转移过程中去除不良微元件的目的。
以上所述仅为本申请的实施方式,并非因此限制本申请的专利范围,凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本申请的专利保护范围内。
Claims (11)
1.一种微元件的转移装置,其特征在于,所述转移装置包括:
转移基板,所述转移基板包括自所述转移基板的至少一表面凸起的多个探针;
控制电路,与多个所述探针连接,用于控制多个所述探针进行作业,多个所述探针独立吸附或者释放选定的微元件。
2.根据权利要求1所述的转移装置,其特征在于,所述控制电路用于独立控制每个所述探针产生或者去除静电吸附力,所述控制电路包括:
静电产生子电路,用于提供产生静电所需第一电压;
多个开关,一个所述开关对应连接一个所述探针,所述开关的两端分别与所述探针和所述静电产生子电路连接;
开关控制电路,用于控制多个所述开关的通断。
3.根据权利要求2所述的转移装置,其特征在于,所述控制电路还包括第一检测子电路,每一所述探针与所述检测子电路连接,所述第一检测子电路用于向多个所述探针提供测试电压/测试电流。
4.根据权利要求3所述的转移装置,其特征在于,当所述第一检测子电路向所述探针提供测试电压/测试电流时,所述开关控制电路控制所述开关断开。
5.根据权利要求3所述的转移装置,其特征在于,所述转移装置还包括:导电临时基板,至少在一表面设有导电层,所述微元件为垂直型微发光二极管芯片,所述微发光二极管芯片的两个电极分别位于所述微发光二极管芯片的相对两侧,所述导电临时基板和所述探针分别与两个所述电极接触,所述导电临时基板用于与所述探针配合向所述微元件的两端提供测试电压/测试电流,使所述微元件通电以进行性能检测。
6.根据权利要求1所述的转移装置,其特征在于,所述微元件为横向型微发光二极管,所述微发光二极管芯片的两个电极位于所述微发光二极管芯片的同一侧;所述控制电路包括第二检测子电路和第三检测子电路,相邻一组所述探针分别与所述第二检测子电路和所述第三检测子电路连接,所述第二检测子电路和所述第三检测子电路用于与所述探针配合向所述微元件的两个所述电极提供测试电压/测试电流,使所述微元件通电以进行性能检测。
7.一种微元件的转移方法,其特征在于,所述转移方法包括:
提供施主基板,所述施主基板上设置有多个微元件;
利用转移装置将多个所述微元件从所述施主基板转移,其中,所述转移装置包括转移基板和控制电路,所述转移基板包括自所述转移基板的至少一表面凸起的多个探针;所述控制电路与多个所述探针连接,用于独立控制多个所述探针进行作业,多个所述探针独立吸附或者释放选定的所述微元件。
8.根据权利要求7所述的转移方法,其特征在于,所述利用转移装置将多个所述微元件从所述施主基板转移,之后,所述转移方法包括:
对多个所述微元件进行性能检测,以获得性能检测通过和性能检测未通过的多个所述微元件;
将性能检测未通过的所述微元件去除;
将性能检测通过的所述微元件转移至目标基板的预定位置。
9.根据权利要求8所述的转移方法,其特征在于,所述微元件为垂直型微发光二极管芯片,所述微发光二极管芯片的两个电极分别位于所述微发光二极管芯片的相对两侧;
所述对多个所述微元件进行性能检测,以获得性能检测通过和性能检测未通过的多个所述微元件,包括:所述微发光二极管芯片的一个所述电极与所述探针接触,所述微发光二极管芯片的另一个所述电极与所述导电临时基板的导电层接触,所述导电临时基板的所述导电层及与所述控制电路中的第一检测子电路连接的探针同时施加测试电压/测试电流到所述微发光二极管芯片;若所述微发光二极管芯片性能满足预设条件,则判定所述微发光二极管芯片性能通过;否则,判定所述微发光二极管芯片性能不通过。
10.根据权利要求8所述的转移方法,其特征在于,所述微元件为横向型微发光二极管,所述微发光二极管芯片的两个电极位于所述微发光二极管芯片的同一侧;
所述对多个所述微元件进行性能检测,以获得性能检测通过和性能检测未通过的多个所述微元件,包括:所述微发光二极管芯片的两个所述电极分别与相邻的第一探针和第二探针接触,所述控制电路中的第二检测子电路和第三检测子电路分别对所述第一探针和所述第二探针同时施加测试电压/测试电流;若所述微发光二极管芯片性能满足预设条件,则判定所述微发光二极管芯片性能通过;否则,判定所述微发光二极管芯片性能不通过。
11.根据权利要求10所述的转移方法,其特征在于,所述将性能检测通过的所述微元件转移至目标基板的预定位置,包括:将性能检测通过的所述微发光二极管芯片吸附在所述导电临时基板上;将所述导电临时基板吸附有所述微发光二极管芯片的一侧朝向所述目标基板,并将所述微发光二极管芯片的两个电极与所述目标基板的所述预定位置接触后释放。
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