CN111081800A - 一种含有CuSCN空穴传输层的GaAs太阳电池及其制备方法 - Google Patents

一种含有CuSCN空穴传输层的GaAs太阳电池及其制备方法 Download PDF

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CN111081800A
CN111081800A CN201911338917.1A CN201911338917A CN111081800A CN 111081800 A CN111081800 A CN 111081800A CN 201911338917 A CN201911338917 A CN 201911338917A CN 111081800 A CN111081800 A CN 111081800A
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hole transport
transport layer
graphene
cuscn
gaas
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李国强
张志杰
刘兴江
高鹏
余粤锋
林静
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South China University of Technology SCUT
CETC 18 Research Institute
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CETC 18 Research Institute
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Abstract

本发明公开了一种含有CuSCN空穴传输层的GaAs太阳电池，其结构由下至上依次为的Au背电极、GaAs衬底、CuSCN空穴传输层、石墨烯层和银浆顶电极。本发明还公开了以上含有CuSCN空穴传输层的GaAs太阳电池的制备方法。本发明的GaAs太阳电池，不仅制备工艺简单，电池制备成本较低，而且光电转换效率高，能长时间稳定工作。

Description

一种含有CuSCN空穴传输层的GaAs太阳电池及其制备方法
技术领域
本发明属于太阳电池的技术领域，特别涉及一种含有CuSCN空穴传输层的GaAs太阳电池及其制备方法。
背景技术
随着地球人口数量的不断增加以及生态环境的日渐恶劣，发展可再生的清洁能源成早已为了世界各国的焦点。而太阳能是自然界中分布最为广泛，总量最大的清洁能源。因此，提高太阳电池的转化效率，降低电池的制备成本具有极为重要实际意义。
GaAs是一种禁带宽度为1.42eV的直接带隙半导体，具有载流子迁移率高，抗辐射性能强等优点，常被用作为高效太阳电池的衬底材料。将GaAs与石墨烯相结合，可简化材料制备工艺，制备出低成本高性能的太阳电池。然而两者界面的载流子复合速率较高，使得器件反向电流大，开路电压低，阻碍了电池性能的进一步提高。
发明内容
为了克服上述技术存在的缺点与不足之处，本发明的首要目的在于提供一种含有CuSCN空穴传输层的GaAs太阳电池。新型空穴传输层的应用极大抑制了载流子的复合并提高器件的开路电压，可以有效提高太阳电池的光电转换效率。此外，相比大多数有机空穴传输材料，CuSCN是一种更为廉价的无机材料，因此可显著降低电池制作成本，同时该电池结构简单，制作周期短，易于实现，具有广阔的商业化前景。
本发明的另一目的在于提供上述含有CuSCN空穴传输层的GaAs太阳电池的制备方法。
本发明目的通过以下技术方案实现：
一种含有CuSCN空穴传输层的GaAs太阳电池，由下至上依次为Au背电极、GaAs衬底、CuSCN空穴传输层、石墨烯和导电银浆顶电极。
进一步地，所述GaAs衬底晶向为(100)，掺杂剂为Si，掺杂浓度为1×1017-×1018/cm3。
进一步地，所述Au背电极的厚度为50-200nm，GaAs衬底厚度为100-500μm，CuSCN空穴传输层为50-500nm，石墨烯层的厚度为1-7层原子厚度，导电银浆顶电极厚度为0.1-2μm。
上述含有空穴传输层的GaAs太阳电池的制备方法，包括下列制备步骤：
(1)采用电子束蒸发法在GaAs衬底背面蒸镀一层Au作为背电极，蒸镀结束后退火处理；
(2)用金刚笔将衬底片裂成1-4cm2小片，并清洗；
(3)在步骤(2)的衬底正面以旋涂的方法制备一层CuSCN空穴阻挡层，并进行退火处理；
(4)将泡取好的石墨烯进行转移，石墨烯漂浮在水面，用镊子夹住已制备了空穴传输层的衬底片，使得石墨烯与空穴传输层接触后捞出，放置于真空干燥箱中抽真空室温干燥1-2小时。然后在50-100℃的丙酮中浸泡20-40分钟以去除石墨烯表面的PMMA。
(5)在石墨烯边缘贴上绝缘胶带以减少漏电，然后用注射器在绝缘胶带上涂一圈导电银浆，并保证导电银浆与石墨烯接触。最后在50-100℃加热烘干30-50分钟制得电池。
进一步地，步骤(1)中所述背电极的蒸镀速率为0.6-1.5nm/s。
进一步地，步骤(1)中所述退火处理是指升温至200-800℃退火处理10-30min。
进一步地，步骤(2)中所述清洗是指依次经丙酮、乙醇和超纯水进行超声清洗1-5分钟，然后用盐酸润洗1-5分钟，并用去离子水清洗残留的盐酸，最后用乙醇超声清洗残留的水分。
进一步地，步骤(3)中所述空穴传输层的制备方法为：将CuSCN粉末溶解于二乙基硫醚中，制备出浓度为20-50mg/ml的旋涂液，将旋涂液滴至衬底片上，以3000-5000转/分的旋涂速度制备空穴传输层，退火温度为50-100℃，退火时间为10-20分钟。
本发明的原理如下：
n型GaAs与p型CuSCN之间形成异质结，GaAs衬底受光激发产生电子空穴对，空穴通过CuSCN空穴传输层输送至石墨烯薄膜并通往外电路，与此同时CuSCN与GaAs之间存在着很高的势垒，阻碍了电子往石墨烯一侧运动，有利于降低载流子的复合，维持电势差。
相比于现有技术，本发明具有如下优点及有益效果：
(1)本发明在GaAs/石墨烯太阳能电池中间插入一层CuSCN作为高效空穴传输材料，利用CuSCN与GaAs之间的势垒阻挡电子向石墨烯一侧传输，有效将电子和空穴有效分离，从而降低电子和空穴的复合几率，减小反向电流，提高开路电压，最终实现太阳能电池光电转换效率的提高。
(2)CuSCN空穴传输材料在光照条件下不会发生分解，因此能有效提高电池在工作过程中的稳定性，延长电池的使用寿命。
(3)相比大多数有机空穴传输材料，CuSCN更为廉价，发明制备的电池结构得到简化，制备方法简单，电池制作成本显著降低，因此可有效降低电池制作成本，使得GaAs太阳电池拥有更加广阔的应用前景。
附图说明
图1为本发明实施例中含有CuSCN空穴传输层的GaAs太阳电池的结构示意图。
图2为本发明实施例中加入CuSCN空穴传输层前后的GaAs太阳电池J-V曲线对比图。
图中各个部件如下：
Au背电极1、GaAs衬底2、CuSCN空穴传输层3、石墨烯层4，导电银浆电极5。
具体实施方式
下面结合实施例及附图对本发明作进一步详细的描述，但本发明的实施方式不限于此。
实施例1
本实施例的一种含有CuSCN空穴传输层的GaAs太阳电池，其结构示意图如图1所示。包括由下至上依次层叠的Au背电极1、GaAs衬底2、CuSCN空穴传输层3、石墨烯层4，导电银浆电极5。
所述含有CuSCN空穴传输层的GaAs太阳电池通过如下方法制备：
(1)采用Si掺杂的n型GaAs半导体为衬底，厚度为350μm，晶向为(100)掺杂浓度是1×1017/cm3。通过电子束蒸镀系统在背面蒸镀一层Au作为背电极，蒸镀速率为1.2nm/s，厚度为100nm，蒸镀结束后进行退火处理。退火温度为500℃，退火时间为10min。
(2)用金刚笔将衬底片裂成1cm2的小片，然后依次用丙酮、乙醇以及超纯水对衬底片进行5分钟的超声清洗，其后用10％的盐酸浸泡3分钟，随后用去离子水冲洗衬底表面的盐酸；最后用乙醇对衬底片进行5分钟的超声清洗以洗去表面水分。
(3)将CuSCN粉末溶解于二乙基硫醚中，制备出浓度为20mg/ml的旋涂液，将旋涂液滴至步骤(2)的衬底片上，以3000转/分的旋涂速度制备空穴传输层，退火温度为50℃，退火时间为10分钟。
(4)将泡取好的石墨烯进行转移，石墨烯面积为40mm2，石墨烯漂浮在水面，用镊子夹住已制备了空穴传输层的衬底片，使得石墨烯与空穴传输层接触后捞出，放置于真空干燥箱中抽真空室温干燥1小时。然后在60℃的丙酮中浸泡20分钟以去除石墨烯表面的PMMA。
(5)在石墨烯边缘贴上绝缘胶带以减少漏电，然后用注射器在绝缘胶带上涂一圈导电银浆，并保证导电银浆与石墨烯接触。最后在60℃加热烘干30分钟制得电池。
图2是加入CuSCN空穴传输层前后的GaAs太阳电池J-V曲线对比图，参比电池的短路电流密度为15.98毫安每平方厘米，开路电压为0.56伏特，转换效率为5.6％；通过在GaAs和石墨烯之间加入一层空穴传输层，开路电压提高为0.77伏特，转换效率提高到7.8％，太阳能电池短路电流密度略有降低到15.69毫安每平方厘米太阳电池，这主要是因为CuSCN的导电性能较差，导致器件的串联电阻增大，从而引起电池的电流密度略有下降。总体来看，太阳电池的性能有所提高的。
本实施例中提供了一种含有CuSCN空穴传输层的的太阳电池元件，一方面p型半导体CuSCN与n型半导体GaAs形成异质结，且CuSCN具有较强的空穴抽取能力，可增强载流子的分离。另一方面CuSCN具有较高的导带能级，可以阻碍电子向顶电极的运输，抑制载流子的复合。因此CuSCN可有效提高器件的开路电压和电池效率。此外，相比大多数有机空穴传输材料，CuSCN是一种更为廉价的材料，因此可显著降低电池制作成本，同时该电池结构简单，制作周期短，易于实现，具有广阔的商业化前景。
实施例2
本实施例的一种含有CuSCN空穴传输层的GaAs太阳电池制备方法如下：
(1)采用Si掺杂的n型GaAs半导体为衬底，厚度为350μm，晶向为(100)掺杂浓度是1×1017/cm3。通过电子束蒸镀系统在背面蒸镀一层Au作为背电极，蒸镀速率为1.5nm/s，厚度为150nm，蒸镀结束后进行退火处理。退火温度为400℃，退火时间为10min。
(2)用金刚笔将衬底片裂成1cm2的小片，然后依次用丙酮、乙醇以及超纯水对衬底片进行5分钟的超声清洗，其后用10％的盐酸浸泡3分钟，随后用去离子水冲洗衬底表面的盐酸；最后用乙醇对衬底片进行5分钟的超声清洗以洗去表面水分。
(3)将CuSCN粉末溶解于二乙基硫醚中，制备出浓度为50mg/ml的旋涂液，将旋涂液滴至步骤(2)的衬底片上，以5000转/分的旋涂速度制备空穴传输层，退火温度为100℃，退火时间为20分钟。
(4)将泡取好的石墨烯进行转移，石墨烯面积为36mm2，石墨烯漂浮在水面，用镊子夹住已制备了空穴传输层的衬底片，使得石墨烯与空穴传输层接触后捞出，放置于真空干燥箱中抽真空室温干燥1小时。然后在60℃的丙酮中浸泡20分钟以去除石墨烯表面的PMMA。
(5)在石墨烯边缘贴上绝缘胶带以减少漏电，然后用注射器在绝缘胶带上涂一圈导电银浆，并保证导电银浆与石墨烯接触。最后在70℃加热烘干30分钟制得电池。
实施例3
本实施例的一种含有CuSCN空穴传输层的GaAs太阳电池制备方法如下：
(1)采用Si掺杂的n型GaAs半导体为衬底，厚度为350μm，晶向为(100)掺杂浓度是1×1017/cm3。通过电子束蒸镀系统在背面蒸镀一层Au作为背电极，蒸镀速率为1.5nm/s，厚度为200nm，蒸镀结束后进行退火处理。退火温度为400℃，退火时间为10min。
(2)用金刚笔将衬底片裂成1cm2的小片，然后依次用丙酮、乙醇以及超纯水对衬底片进行5分钟的超声清洗，其后用10％的盐酸浸泡3分钟，随后用去离子水冲洗衬底表面的盐酸；最后用乙醇对衬底片进行5分钟的超声清洗以洗去表面水分。
(3)将CuSCN粉末溶解于二乙基硫醚中，制备出浓度为40mg/ml的旋涂液，将旋涂液滴至步骤(2)的衬底片上，以4000转/分的旋涂速度制备空穴传输层，退火温度为80℃，退火时间为10分钟。
(4)将泡取好的石墨烯进行转移，石墨烯面积为16mm2，石墨烯漂浮在水面，用镊子夹住已制备了空穴传输层的衬底片，使得石墨烯与空穴传输层接触后捞出，放置于真空干燥箱中抽真空室温干燥1小时。然后在60℃的丙酮中浸泡20分钟以去除石墨烯表面的PMMA。
(5)在石墨烯边缘贴上绝缘胶带以减少漏电，然后用注射器在绝缘胶带上涂一圈导电银浆，并保证导电银浆与石墨烯接触。最后在80℃加热烘干30分钟制得电池。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受上述实施例的限制，其它的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。

Claims (10)

1.一种含有CuSCN空穴传输层的GaAs太阳电池，其特征在于：由下至上的结构依次为Au背电极、GaAs衬底、CuSCN空穴传输层、石墨烯层和导电银浆顶电极；所述GaAs外延层晶向为(100)，掺杂浓度为1×1017-1×1018/cm3；所述CuSCN空穴传输层为50-500nm。
2.根据权利要求1所述的一种含有CuSCN空穴传输层的GaAs太阳电池，其特征在于：所述GaAs衬底为Si掺杂的n型GaAs半导体衬底。
3.根据权利要求1所述的一种含有CuSCN空穴传输层的GaAs太阳电池，其特征在于：所述Au背电极的厚度为50-200nm，GaAs衬底厚度为100-500μm。
4.根据权利要求1所述的一种含有CuSCN空穴传输层的GaAs太阳电池，其特征在于：所述石墨烯层的厚度为1-7层原子厚度。
5.根据权利要求1所述的一种含有CuSCN空穴传输层的GaAs太阳电池，其特征在于：所述导电银浆顶电极厚度为0.1-2μm。
6.权利要求1-5任一项所述的一种含有CuSCN空穴传输层的GaAs太阳电池的制备方法，其特征在于，包括如下制备步骤：
(1)采用电子束蒸发法在GaAs衬底背面蒸镀一层Au作为背电极，蒸镀结束后退火处理；
(2)用金刚笔将衬底片裂成1-4cm2小片，并清洗；
(3)在步骤(2)的衬底正面以旋涂的方法制备一层CuSCN空穴传输层，并进行退火处理；
(4)将泡取好的石墨烯进行转移，石墨烯漂浮在水面，用镊子夹住已制备了空穴传输层的衬底片，使得石墨烯与空穴传输层接触后捞出，放置于真空干燥箱中抽真空室温干燥1-2小时，然后在50-100℃的丙酮中浸泡20-40分钟以去除石墨烯表面的PMMA；
(5)在石墨烯边缘贴上绝缘胶带以减少漏电，然后用注射器在绝缘胶带上涂一圈导电银浆，并保证导电银浆与石墨烯接触，最后在50-100℃加热烘干30-50分钟制得电池。
7.根据权利要求6所述的一种含有CuSCN空穴传输层的GaAs太阳电池的制备方法，其特征在于：步骤(1)中，所述背电极的蒸镀速率为0.6-1.5nm/s。
8.根据权利要求6所述的一种含有CuSCN空穴传输层的GaAs太阳电池的制备方法，其特征在于：步骤(1)中，所述退火处理是指升温至200-800℃退火处理10-30min。
9.根据权利要求6所述的一种含有CuSCN空穴传输层的GaAs太阳电池的制备方法，其特征在于：步骤(2)中，所述清洗是指依次经丙酮、乙醇和超纯水进行超声清洗1-5分钟，然后用盐酸润洗1-5分钟，并用去离子水清洗残留的盐酸，最后用乙醇超声清洗残留的水分。
10.根据权利要求6所述的一种含有CuSCN空穴传输层的GaAs太阳电池的制备方法，其特征在于：步骤(3)中，所述空穴传输层的制备方法为：将CuSCN粉末溶解于二乙基硫醚中，制备出浓度为20-50mg/ml的旋涂液，将旋涂液滴至衬底片上，以3000-5000转/分的旋涂速度制备空穴传输层，退火温度为50-100℃，退火时间为10-20分钟。
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