CN113206123A - 一种钙钛矿/晶硅叠层电池及其制备方法 - Google Patents
一种钙钛矿/晶硅叠层电池及其制备方法 Download PDFInfo
- Publication number
- CN113206123A CN113206123A CN202110436019.0A CN202110436019A CN113206123A CN 113206123 A CN113206123 A CN 113206123A CN 202110436019 A CN202110436019 A CN 202110436019A CN 113206123 A CN113206123 A CN 113206123A
- Authority
- CN
- China
- Prior art keywords
- layer
- perovskite
- cell
- oxide
- tunneling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title abstract description 13
- 230000005641 tunneling Effects 0.000 claims abstract description 57
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 22
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000005525 hole transport Effects 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 10
- 229910001887 tin oxide Inorganic materials 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229920001167 Poly(triaryl amine) Polymers 0.000 claims description 7
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 6
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 6
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 3
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 3
- 229940112669 cuprous oxide Drugs 0.000 claims description 3
- 229910003472 fullerene Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 claims description 3
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910000611 Zinc aluminium Inorganic materials 0.000 claims description 2
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 10
- 230000006798 recombination Effects 0.000 abstract description 9
- 238000005215 recombination Methods 0.000 abstract description 9
- 239000000969 carrier Substances 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 115
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 239000002131 composite material Substances 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000010146 3D printing Methods 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 2
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种钙钛矿/晶硅叠层电池及其制备方法，属于太阳能电池领域。该叠层电池包括钙钛矿顶电池和隧穿氧化层钝化接触（TOPCon）硅底电池，从受光正面至背面依次为：顶电极、透明导电层、缓冲层、电子传输层、钙钛矿层、空穴传输层、n型掺杂多晶硅层、第一隧穿氧化层、n型单晶硅基体、第二隧穿氧化层、p型掺杂多晶硅层、氮化硅层和底电极。本发明的叠层电池，通过TOPCon电池的n型掺杂多晶硅层与钙钛矿电池的空穴传输层直接形成叠层电池的隧穿结，能有效实现载流子的隧穿复合，不仅在工艺上更简便，有效降低叠层电池制备成本，还可以减少叠层电池中隧穿结的光电损耗，提升叠层电池光电转换效率。
Description
技术领域
本发明属于太阳能电池领域，具体涉及一种钙钛矿/晶硅叠层电池及其制备方法。
背景技术
随着碳中和、节能减排成为国际社会的主流趋势，光伏发电作为清洁新能源中的重要一环获得了原来越多的关注。其中新型有机-无机杂化钙钛矿太阳能电池具有低成本、易制备和带隙在1.2-2.0 eV可调节等优异的光电性能，近几年发展迅速。单结钙钛矿电池的光电转换效率已从2009年的3.8 %提升到2021年的25.5 %，也被认为是最具潜力的下一代低成本太阳能电池的光吸收材料。
晶硅电池是目前光伏市场占有率最高的产品。隧穿氧化层钝化接触（TunnelOxide Passivated Contact，TOPCon）太阳能电池是一种基于选择性载流子原理的新型钝化接触太阳能电池，其电池结构为N型硅衬底电池，在电池背面制备一层超薄氧化硅，然后再沉积一层掺杂多晶硅薄层，二者共同形成了钝化接触结构，有效降低表面复合和金属接触复合。据计算TOPCon理论效率可达28.7 %，电池效率仍具有较大的提升空间。
当前，钙钛矿/TOPCon叠层太阳能电池是突破单结太阳能电池效率极限的有效途径。通过使用1.50-1.75 eV宽带隙的钙钛矿作为顶电池吸收短波长部分的太阳光，使用1.12eV窄带隙的TOPCon硅电池作为底电池吸收长波长部分的太阳光，可提高太阳光谱的利用率，降低单结电池中载流子的热弛豫损失，从而提高光电转换效率。
但是，典型钙钛矿/TOPCon叠层太阳能电池仍存在不少缺陷。一方面，钙钛矿/TOPCon叠层电池中的隧穿结往往通过插入隧穿复合层形成，隧穿复合层采用透明导电氧化物(TCO)。如：CN 110867516 A公开的钙钛矿和晶硅背钝化叠层太阳电池，其中间层为透明导电薄膜；CN210668381 U公开的硅基叠层太阳电池，其复合层的材料为氧化铟锡、氟掺杂的氧化锡、氧化铟锌或者铝掺杂的氧化锌。但这类透明导电薄膜成本较高，且横向电阻较小，存在横向漏电严重等缺点，因此需要寻找成本更低、性能更优异的隧穿结结构。
另一方面，钙钛矿/TOPCon叠层电池中的TOPCon底电池往往采用单面钝化，即只在单晶硅背光面进行隧穿氧化层钝化接触，正面掺杂p型单晶硅形成单结电池。该单极性TOPCon电池制备工艺繁琐，表面缺陷较多引起效率损失，只与正式钙钛矿结构叠层兼容。为进一步钝化缺陷，提升效率且兼容稳定的钙钛矿工艺，新型的双面钝化工艺以及叠层器件结构需要被开发。
发明内容
本发明的目的是提供一种钙钛矿/双面钝化TOPCon晶硅叠层电池，通过n型掺杂多晶硅层与空穴传输层直接形成隧穿结，能有效实现载流子的隧穿复合，不仅在工艺上更简便，还有效降低了成本，提升叠层电池的转换效率。
为了实现上述发明目的，本发明采用以下技术方案：
一种钙钛矿/晶硅叠层电池，包括钙钛矿顶电池和TOPCon硅底电池，从受光正面至背面依次为：顶电极、透明导电层、缓冲层、电子传输层、钙钛矿层、空穴传输层、n型掺杂多晶硅层、第一隧穿氧化层、n型单晶硅基体、第二隧穿氧化层、p型掺杂多晶硅层、氮化硅层和底电极。
进一步地，所述顶电极为栅线电极，底电极为栅线电极或全面积电极。
更进一步地，所述栅线电极和全面电极采用银、铜、金、铝、钯、钛、铬、或镍中的一种或几种材料制成。
进一步地，所述透明导电层采用氧化铟锡（ITO）、氧化铟钨（IWO）、掺氟氧化锡（FTO）、氧化铟锌（IZO）或掺铝氧化锌（AZO）中的一种或几种材料制成。
进一步地，所述缓冲层采用氧化锡（SnO2）、氧化钼（MoO3）或2,9-二甲基-4,7-联苯-1,10-邻二氮杂菲（BCP）中的一种或几种材料制成。
进一步地，所述电子传输层采用n型半导体材料制成，n型半导体材料选自氧化钛（TiO2）、氧化锡（SnO2）、氧化锌（ZnO）、富勒烯（C60）、石墨烯或富勒烯衍生物PCBM。
进一步地，所述钙钛矿层采用带隙为1.50-1.75 eV的钙钛矿材料制成。
更进一步地，所述钙钛矿材料为ABX3结构，A为MA、FA、Cs或Rb中的一种或几种，B为Pb，X为I、Br或Cl中的一种或几种。
进一步地，所述空穴传输层采用p型半导体材料制成，选自氧化镍（NiO）、氧化钼（MoO3）、氧化亚铜（Cu2O）、碘化铜（CuI）、酞菁铜（CuPc）、硫氰酸亚铜（CuSCN）、氧化还原石墨烯、聚[双(4-苯基)(2,4,6-三甲基苯基)胺]（PTAA, poly(triaryl amine)）或2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴（Spiro-OMeTAD）。
本发明一方面通过在n型单晶硅基体的上下表面制备第一隧穿氧化钝化层和第二隧穿氧化层，沉积多晶硅，对受光面正面的多晶硅进行n型掺杂，对底部的多晶硅进行p型掺杂，构建了双面双结TOPCon结构的电池。另一方面通过掺杂n型多晶硅与掺杂的空穴传输层直接接触形成隧穿结，可获得更加优良的纵向导电性，能有效实现载流子的隧穿复合，不仅在工艺上更简便，去除传统的透明导电氧化物隧穿层进一步简化工艺，降低了成本，还可以减少叠层电池中隧穿结的光电损耗，提升叠层电池光电转换效率。
附图说明
图1为典型正式钙钛矿-单结TOPCon叠层电池结构示意图。其中，1为顶电极、2为透明导电电极、3为空穴传输层、4为钙钛矿层、5为电子传输层、6为隧穿复合层、7为n掺杂单晶硅层、8为n型单晶硅基体、9为隧穿氧化层、10为p掺杂多晶硅层、11为氮化硅层、12为底电极。
图2为本发明的钙钛矿/晶硅叠层电池结构示意图。其中，1为顶电极、2为透明导电层、3为缓冲层、4为电子传输层、5为钙钛矿层、6为空穴传输层、7为n型掺杂多晶硅层、8为第一隧穿氧化层、9为n型单晶硅基体、10为第二隧穿氧化层、11为p型掺杂多晶硅层、12为氮化硅层、13为底电极。
具体实施方式
如图1所示，目前典型的N型TOPCon电池采用背光面隧穿氧化层9加p掺杂多晶硅层10钝化接触，受光正面采用同质n掺杂单晶硅层7，该单极性TOPCon电池制备工艺繁琐，只与正式钙钛矿结构叠层兼容。而正式钙钛矿结构稳定性较差，且正式叠层结构目前效率普遍小于反式叠层结构。
另一方面，钙钛矿/晶硅叠层电池中的隧穿结往往通过插入隧穿复合层形成，如图1中隧穿复合层6采用透明导电氧化物(TCO)，如氧化铟锡(ITO)等；TCO成本较高，且横向电阻较小，存在横向漏电严重等缺点。因此，需要寻找成本更加低廉的隧穿层或者去除隧穿复合层直接形成隧穿结。
针对上述现有技术的不足，本发明设计了一种新的反式钙钛矿与双结TOPCon的叠层电池，该叠层电池从受光正面至背面依次为：顶电极1、透明导电层2、缓冲层3、电子传输层4、钙钛矿层5、空穴传输层6、n型掺杂多晶硅层7、第一隧穿氧化层8、n型单晶硅基体9、第二隧穿氧化层10、p型掺杂多晶硅层11、氮化硅层12和底电极13，如图2所示。该叠层电池通过n型掺杂多晶硅层7与掺杂的空穴传输层6直接接触形成隧穿结，在去除传统隧穿复合层的同时，能有效实现载流子的隧穿复合。
一方面，本发明通过在n型单晶硅基体的上下表面生长第一隧穿氧化钝化层8和第二隧穿氧化钝化层10，沉积多晶硅，对受光面正面的多晶硅进行n型掺杂，对底部的多晶硅进行p型掺杂，构建了双面双结TOPCon结构的电池。同时，在受光面n型掺杂多晶硅层7上依次设计空穴传输层6、钙钛矿5以及电子传输层4，在N型TOPCon底电池上实现了反式结构的叠层电池。
该叠层电池由于双面多晶硅与硅异质结的形成进一步钝化了表面缺陷，提高了硅电池的性能，同时叠层结构使得入光面多晶硅生长对蓝光部分的吸收增大的缺陷得到完美解决，提升了叠层电池的性能。
另一方面，本发明通过n型掺杂多晶硅层7与掺杂的空穴传输层6直接接触形成隧穿结，可获得更加优良的纵向导电性，能有效实现载流子的隧穿复合，同时去除传统的透明导电氧化物隧穿层进一步简化工艺，降低了成本。
具体来说，本发明的叠层电池结构可以是平面结构、受光面平面底部绒面、受光面绒面底部平面或者全绒面结构。
所述顶电极1为栅线电极，底电极13可以为栅线电极或者全面积电极，栅线电极和全面积电极可以采用金、钯、银、钛、铬、镍、铝或铜等金属材料中的一种或者几种制成，制备方法可以是真空蒸发、溅射、原子层沉积、3D打印、丝网印刷、喷墨打印等。厚度为0.1-10 μm。
所述透明导电层2采用氧化铟锡（ITO）、氧化铟钨（IWO）、掺氟氧化锡（FTO）、氧化铟锌（IZO）、掺铝氧化锌（AZO）中的一种或者几种制成，制备方法可以是真空蒸发、磁控溅射、原子层沉积、化学气相沉积、离子束沉积、脉冲激光沉积、旋涂、刮涂、3D打印、印刷、喷涂等。厚度为30-200 nm。
所述缓冲层3可以减少透明导电层沉积时对钙钛矿电池的损失。可采用氧化锡（SnO2）、氧化钼（MoO3）、2,9-二甲基-4,7-联苯-1,10-邻二氮杂菲（BCP）中的一种或者几种制成，制备方法可以是原子层沉积、真空热蒸发或者溶液旋涂法等。厚度为5-100 nm。
所述电子传输层4采用n型半导体材料制成，选自氧化钛（TiO2）、氧化锡（SnO2）、氧化锌（ZnO）、富勒烯（C60）、石墨烯或富勒烯衍生物 （6,6）-苯基-C61-丁酸甲酯 (PCBM)，制备方法可以是溶液旋涂法、真空蒸发法、磁控溅射法、原子层沉积等。厚度为10-20 nm。
所述钙钛矿层5的厚度为200-1500 nm，采用带隙为1.50-1.75 eV的钙钛矿材料制成，这种材料能够吸收300-750 nm波长的光，能够很好的与晶硅电池相匹配，从而使叠层电池充分的利用太阳光谱。所述钙钛矿材料为ABX3结构，A可以是MA、FA、Cs、Rb中的一种或几种混合；B是Pb；X是I、Br、Cl中的一种或几种混合。
所述空穴传输层6采用p型半导体材料制成，选自氧化镍（NiO）、氧化钼（MoO3）、氧化亚铜（Cu2O）、碘化铜（CuI）、酞菁铜（CuPc）、硫氰酸亚铜（CuSCN）、氧化还原石墨烯、聚[双(4-苯基)(2,4,6-三甲基苯基)胺]（PTAA, poly(triaryl amine)）或2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴（Spiro-OMeTAD）。厚度为10-100 nm。
所述n型单晶硅基体9的厚度为40-400 μm。可以为双面平面、单面绒面或双面绒面中的一种。
所述第一隧穿氧化层8和第二隧穿氧化层10的厚度为0.5-2 nm。隧穿氧化层太薄起不到钝化作用，太厚影响载流子输运，在0.5-2 nm厚度下最为适宜。
第一隧穿氧化层8和第二隧穿氧化层10均可过硝酸氧化法或臭氧氧化法或水蒸气氧化法或热氧氧化法在n型单晶硅基体9的表面制备。
所述n型掺杂多晶硅层7的厚度为30-3000 nm。所述p型掺杂多晶硅层11的厚度为30-3000 nm。
n型掺杂多晶硅层7和p型掺杂多晶硅层11均可通过低压化学气相沉积法（LowPressure Chemical Vapor Deposition，LPCVD）或者等离子增强化学气相沉积法（PlasmaEnhanced Chemical Vapor Deposition，PECVD）在单晶硅的两侧制得。
所述氮化硅层12的厚度为50-150 nm。
氮化硅12可通过等离子增强化学气相沉积法（Plasma Enhanced Chemical VaporDeposition，PECVD）制得。
下面具体实施例对本发明作进一步详细说明，但不应理解为对本发明的限制。在不背离本发明精神和实质的情况下，对本发明方法、步骤或条件所作的修改或替换，均属于本发明的范围。实施例中未注明具体条件的实验方法及未说明配方的试剂均为按照本领域常规条件。
实施例1
一种钙钛矿/晶硅叠层电池及其制备方法
步骤一：制绒，以n型单晶硅片作为硅衬底，首先将硅片依次在去离子水、丙酮、异丙醇溶液中超声清洗十分钟，然后放置在制绒液中进行制绒处理，最后在质量分数为2-5％的氢氟酸中进行清洗，清洗干净硅片表面，得到n型单晶硅基体 。
步骤二：隧穿氧化层制备，利用热氧化方法，在400℃条件下在硅衬底上下表面制备厚度在1-2 nm的第一隧穿氧化层（SiOx）和第二隧穿氧化层（SiOx）。
步骤三：掺杂多晶硅层制备，采用低压化学气相沉积法（LPCVD），在硅衬底上表面的SiOx层上沉积n型掺杂多晶硅层 ；在硅衬底下表面的SiOx上沉积p型掺杂多晶硅层，厚度为100-300 nm，然后在900℃下进行退火。
步骤四：氮化硅（SiNx）层制备，在下表面多晶硅层上采用低压化学气相沉积法（LPCVD）继续沉积50-200 nm SiNx层。
步骤五：隧穿结构建，通过在n掺杂多晶硅层上表面磁控溅射p型NiO形成隧穿结，厚度为10-30 nm。
步骤六：钙钛矿制备，采用蒸发-溶液两步法制备FACsPb(IBr)3钙钛矿层。首先通过真空热蒸发无机物层，包括PbI2、CsBr、PbBr的两种或多种；然后采用溶液旋涂法在无机物层上旋涂有机盐溶液，包括FABr、FAI等的IPA溶液，最后在空气中150 ℃退火20 min。
步骤七：电子传输层制备，在钙钛矿层上采用热蒸发蒸镀10-30 nm C60。
步骤八：缓冲层制备，在电子传输层上ALD沉积20 nm SnO2。
步骤九：透明导电层制备，在缓冲层上通过磁控溅射制备ITO，厚度为80 nm。
步骤十：电极制备，在叠层电池两面均采用热蒸发Ag作为电极，厚度为100 nm。
对制得的电池效率进行检测，结果如下：
根据以上结果可知，本发明的叠层电池能量转换效率可达28.31%，通过n型掺杂多晶硅与掺杂的空穴传输层直接接触形成隧穿结，去除传统隧穿复合层的同时，有效实现载流子的隧穿复合。
Claims (10)
1.一种钙钛矿/晶硅叠层电池，其特征在于：包括钙钛矿顶电池和TOPCon硅底电池，从受光正面至背面依次为：顶电极、透明导电层、缓冲层、电子传输层、钙钛矿层、空穴传输层、n型掺杂多晶硅层、第一隧穿氧化层、n型单晶硅基体、第二隧穿氧化层、p型掺杂多晶硅层、氮化硅层和底电极。
2.根据权利要求1所述的钙钛矿/晶硅叠层电池，其特征在于：所述顶电极为栅线电极，底电极为栅线电极或全面积电极。
3.根据权利要求2所述的钙钛矿/晶硅叠层电池，其特征在于：所述栅线电极和全面电极采用银、铜、金、铝、钯、钛、铬、或镍中的一种或几种材料制成。
4.根据权利要求1所述的钙钛矿/晶硅叠层电池，其特征在于：所述透明导电层采用氧化铟锡、氧化铟钨、掺氟氧化锡、氧化铟锌或掺铝氧化锌中的一种或几种材料制成。
5.根据权利要求1所述的钙钛矿/晶硅叠层电池，其特征在于：所述缓冲层采用氧化锡、氧化钼或2,9-二甲基-4,7-联苯-1,10-邻二氮杂菲中的一种或几种材料制成。
6.根据权利要求1所述的钙钛矿/晶硅叠层电池，其特征在于：所述电子传输层采用n型半导体材料制成，n型半导体材料选自氧化钛、氧化锡、氧化锌、富勒烯、石墨烯或富勒烯衍生物。
7.根据权利要求1所述的钙钛矿/晶硅叠层电池，其特征在于：所述钙钛矿层采用带隙为1.50-1.75eV的钙钛矿材料制成。
8.根据权利要求7所述的钙钛矿/晶硅叠层电池，其特征在于：所述钙钛矿材料为ABX3结构，A为MA、FA、Cs或Rb中的一种或几种，B为Pb，X为I、Br或Cl中的一种或几种。
9.根据权利要求1所述的钙钛矿/晶硅叠层电池，其特征在于：所述空穴传输层采用p型半导体材料制成，p型半导体材料选自氧化镍、氧化钼、氧化亚铜、碘化铜、酞菁铜、硫氰酸亚铜、氧化还原石墨烯、聚[双(4-苯基)(2,4,6-三甲基苯基)胺]或2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴。
10.权利要求1所述的钙钛矿/晶硅叠层电池的制备方法，其特征在于：
所述方法包括：
在n型单晶硅基体的上下表面分别制备第一隧穿氧化层和第二隧穿氧化层，然后在n型单晶硅基体上表面的第一隧穿氧化层上制备n型掺杂多晶硅层、在n型单晶硅基体下表面的第二隧穿氧化层上制备p型掺杂多晶硅层；
在n型单晶硅基体下表面的p型掺杂多晶硅层上制备氮化硅层；
在n型单晶硅基体上表面的n型掺杂多晶硅层上制备钙钛矿顶电池的空穴传输层，构建得到叠层电池的隧穿结；
在空穴传输层上依次制备钙钛矿层、电子传输层、缓冲层和透明导电层；
在构建好的叠层电池两面分别制备顶电极和底电极，即可得到所述叠层电池。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110436019.0A CN113206123A (zh) | 2021-04-22 | 2021-04-22 | 一种钙钛矿/晶硅叠层电池及其制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110436019.0A CN113206123A (zh) | 2021-04-22 | 2021-04-22 | 一种钙钛矿/晶硅叠层电池及其制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113206123A true CN113206123A (zh) | 2021-08-03 |
Family
ID=77027914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110436019.0A Pending CN113206123A (zh) | 2021-04-22 | 2021-04-22 | 一种钙钛矿/晶硅叠层电池及其制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113206123A (zh) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113707734A (zh) * | 2021-08-24 | 2021-11-26 | 上海交通大学 | 具有空穴选择钝化结构的晶硅/钙钛矿叠层太阳电池 |
| CN114613868A (zh) * | 2022-02-17 | 2022-06-10 | 西安理工大学 | 基于n型硅基底的双面TOPCon光伏电池 |
| CN115472711A (zh) * | 2022-06-28 | 2022-12-13 | 隆基乐叶光伏科技(西咸新区)有限公司 | 具有铁电隧道结串联结构的叠层电池 |
| WO2023151604A1 (zh) * | 2022-02-10 | 2023-08-17 | 天合光能股份有限公司 | 一种叠层太阳能电池及其应用 |
| EP4336569A1 (fr) * | 2022-09-09 | 2024-03-13 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Cellule photovoltaique a contacts passives en double face et comportant des portions d'otc localisées sous les métallisations avant |
| WO2024066474A1 (zh) * | 2022-09-28 | 2024-04-04 | 隆基绿能科技股份有限公司 | 一种钙钛矿太阳能电池及其制造方法、叠层太阳能电池 |
| CN118016733A (zh) * | 2024-04-08 | 2024-05-10 | 天合光能股份有限公司 | 太阳能电池以及太阳能电池的制备方法 |
| WO2024149012A1 (zh) * | 2023-01-10 | 2024-07-18 | 隆基绿能科技股份有限公司 | 叠层太阳能电池 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108352421A (zh) * | 2015-11-19 | 2018-07-31 | 太阳能研究所股份有限公司 | 具有通过载流子选择性触点互连的多个吸收体的太阳能电池 |
| CN110350087A (zh) * | 2019-05-30 | 2019-10-18 | 北京宏泰创新科技有限公司 | 钙钛矿/硅异质结太阳能电池的制备方法及叠层太阳能电池 |
| CN110970562A (zh) * | 2018-09-28 | 2020-04-07 | 东泰高科装备科技有限公司 | 一种钙钛矿/晶硅叠层太阳能电池及其制备方法 |
| US20200176618A1 (en) * | 2017-07-21 | 2020-06-04 | Lg Electronics Inc. | Perovskite solar battery and tandem solar battery including same |
| CN111326606A (zh) * | 2020-03-11 | 2020-06-23 | 苏州光汇新能源科技有限公司 | N型分片太阳能电池结构及其制作方法 |
| CN111584670A (zh) * | 2019-02-19 | 2020-08-25 | 泰州隆基乐叶光伏科技有限公司 | 一种叠层太阳能电池及其制备方法 |
| CN112086534A (zh) * | 2020-08-21 | 2020-12-15 | 隆基绿能科技股份有限公司 | 一种叠层电池及其制作方法 |
-
2021
- 2021-04-22 CN CN202110436019.0A patent/CN113206123A/zh active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108352421A (zh) * | 2015-11-19 | 2018-07-31 | 太阳能研究所股份有限公司 | 具有通过载流子选择性触点互连的多个吸收体的太阳能电池 |
| US20200176618A1 (en) * | 2017-07-21 | 2020-06-04 | Lg Electronics Inc. | Perovskite solar battery and tandem solar battery including same |
| CN110970562A (zh) * | 2018-09-28 | 2020-04-07 | 东泰高科装备科技有限公司 | 一种钙钛矿/晶硅叠层太阳能电池及其制备方法 |
| CN111584670A (zh) * | 2019-02-19 | 2020-08-25 | 泰州隆基乐叶光伏科技有限公司 | 一种叠层太阳能电池及其制备方法 |
| CN110350087A (zh) * | 2019-05-30 | 2019-10-18 | 北京宏泰创新科技有限公司 | 钙钛矿/硅异质结太阳能电池的制备方法及叠层太阳能电池 |
| CN111326606A (zh) * | 2020-03-11 | 2020-06-23 | 苏州光汇新能源科技有限公司 | N型分片太阳能电池结构及其制作方法 |
| CN112086534A (zh) * | 2020-08-21 | 2020-12-15 | 隆基绿能科技股份有限公司 | 一种叠层电池及其制作方法 |
Non-Patent Citations (1)
| Title |
|---|
| 李剑: "有机光伏器件的界面电子结构及其电子复合与产生过程的研究", 《中国优秀硕士学位论文全文数据库（工程科技Ⅱ辑）》, 15 December 2013 (2013-12-15), pages 8 - 54 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113707734A (zh) * | 2021-08-24 | 2021-11-26 | 上海交通大学 | 具有空穴选择钝化结构的晶硅/钙钛矿叠层太阳电池 |
| CN113707734B (zh) * | 2021-08-24 | 2024-04-26 | 上海交通大学 | 具有空穴选择钝化结构的晶硅/钙钛矿叠层太阳电池 |
| WO2023151604A1 (zh) * | 2022-02-10 | 2023-08-17 | 天合光能股份有限公司 | 一种叠层太阳能电池及其应用 |
| CN114613868A (zh) * | 2022-02-17 | 2022-06-10 | 西安理工大学 | 基于n型硅基底的双面TOPCon光伏电池 |
| CN115472711A (zh) * | 2022-06-28 | 2022-12-13 | 隆基乐叶光伏科技(西咸新区)有限公司 | 具有铁电隧道结串联结构的叠层电池 |
| EP4336569A1 (fr) * | 2022-09-09 | 2024-03-13 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Cellule photovoltaique a contacts passives en double face et comportant des portions d'otc localisées sous les métallisations avant |
| FR3139666A1 (fr) * | 2022-09-09 | 2024-03-15 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Cellule photovoltaique a contacts passives en double face et comportant des portions d’otc localisees sous les metallisations avant |
| WO2024066474A1 (zh) * | 2022-09-28 | 2024-04-04 | 隆基绿能科技股份有限公司 | 一种钙钛矿太阳能电池及其制造方法、叠层太阳能电池 |
| WO2024149012A1 (zh) * | 2023-01-10 | 2024-07-18 | 隆基绿能科技股份有限公司 | 叠层太阳能电池 |
| CN118016733A (zh) * | 2024-04-08 | 2024-05-10 | 天合光能股份有限公司 | 太阳能电池以及太阳能电池的制备方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ajayan et al. | A review of photovoltaic performance of organic/inorganic solar cells for future renewable and sustainable energy technologies | |
| CN113206123A (zh) | 一种钙钛矿/晶硅叠层电池及其制备方法 | |
| US10535791B2 (en) | 2-terminal metal halide semiconductor/C-silicon multijunction solar cell with tunnel junction | |
| CN110600614B (zh) | 一种钙钛矿/钙钛矿两端叠层太阳能电池的隧穿结结构 | |
| KR20190010197A (ko) | 페로브스카이트 태양전지 및 이를 포함하는 탬덤 태양전지 | |
| US20200212243A1 (en) | Method for manufacturing perovskite silicon tandem solar cell | |
| CN113707734B (zh) | 具有空穴选择钝化结构的晶硅/钙钛矿叠层太阳电池 | |
| JP2023538427A (ja) | タンデム型太陽電池 | |
| US11616160B2 (en) | Tandem solar cell | |
| CN110867516A (zh) | 新型基于钙钛矿和晶硅背钝化叠层太阳电池及其制造方法 | |
| CN110970562A (zh) | 一种钙钛矿/晶硅叠层太阳能电池及其制备方法 | |
| Li et al. | Lithography-free and dopant-free back-contact silicon heterojunction solar cells with solution-processed TiO2 as the efficient electron selective layer | |
| CN111430494A (zh) | 一种串联型钙钛矿晶硅太阳能电池及其制备方法 | |
| CN114256387B (zh) | 一种钙钛矿-异质结三端mwt结构叠层太阳能电池的制备方法 | |
| CN115117247B (zh) | 一种钙钛矿太阳能电池及其制备方法 | |
| CN112103392A (zh) | 一种复合空穴传输层及包含其的钙钛矿太阳能电池 | |
| CN110085683A (zh) | 无掺杂晶体硅异质结太阳能电池及其制备方法 | |
| Singh et al. | Crystalline silicon solar cells with thin poly‐SiOx carrier‐selective passivating contacts for perovskite/c‐Si tandem applications | |
| KR102474480B1 (ko) | 태양전지의 제조 방법 | |
| KR20180018895A (ko) | 양면 수광형 실리콘 태양전지 | |
| JP2017168500A (ja) | 積層型光電変換装置およびその製造方法 | |
| CN112909181A (zh) | 一种钙钛矿/钙钛矿两端叠层太阳能电池的隧穿结 | |
| WO2023098038A1 (zh) | 一种钙钛矿太阳能电池的柱状电极结构的制备方法 | |
| KR102591913B1 (ko) | 태양전지 | |
| CN114335348B (zh) | 一种pn异质结硒化锑/钙钛矿太阳能电池及其制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220113 Address after: 213000 No.2, Tianhe Road, Tianhe photovoltaic industrial park, Xinbei District, Changzhou City, Jiangsu Province Applicant after: TRINASOLAR Co.,Ltd. Address before: 210023 163 Xianlin Road, Qixia District, Nanjing, Jiangsu Applicant before: NANJING University |