CN111055029A - Laser cutting device and method for regulating and controlling crack propagation by controlling plasma through electromagnetic field - Google Patents
Laser cutting device and method for regulating and controlling crack propagation by controlling plasma through electromagnetic field Download PDFInfo
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- CN111055029A CN111055029A CN201911409787.6A CN201911409787A CN111055029A CN 111055029 A CN111055029 A CN 111055029A CN 201911409787 A CN201911409787 A CN 201911409787A CN 111055029 A CN111055029 A CN 111055029A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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Abstract
Disclosed are a laser cutting device and a method for regulating crack propagation by controlling plasma through an electromagnetic field, wherein the device comprises: a multi-axis mobile platform (9); the imaging system is used for acquiring a surface image of a workpiece (14) to be processed on the multi-axis mobile platform (9); the invisible cutting device is used for generating a laser beam (15) which is converged inside a machined workpiece (14) to enable workpiece materials to be gasified and ionized to form plasma; and an electromagnetic field generating device for generating an electric field force and a magnetic field force applied to the plasma. The plasma accelerates under the action of electric field force and magnetic field force, and further impacts the formed crack to expand the crack. The purpose of ultrafast laser invisible cutting for regulating and controlling crack propagation based on the plasma controlled by the electromagnetic field is achieved by controlling the space-time position and the field energy of the electromagnetic field. The invention solves the bottleneck problem of low invisible cutting efficiency while maintaining and improving the quality of the ultrafast laser invisible cutting.
Description
Technical Field
The invention belongs to the field of mechanical cutting processing, relates to a high-precision ultrafast laser invisible cutting technology, and particularly relates to a laser cutting device and method for controlling plasma to regulate and control crack propagation through an electromagnetic field.
Background
At present, the semiconductor industry widely uses mechanical cutting method to cut the wafer. Mechanical dicing of wafers is the direct dicing of wafers using a dicing blade rotating at high speed. The mechanical cutting has the advantages of simple and convenient operation and low requirement on a cutting instrument. Mechanical cutting has a number of disadvantages. Firstly, the mechanical cutting is easy to cause edge breakage and damage of the wafer; secondly, the cutting path of mechanical cutting is large, which causes unnecessary waste; finally, the blades used for mechanical cutting are prone to wear, need to be replaced frequently, and are relatively high in cost. These disadvantages are due, ultimately, to the mechanical contact of the blade with the material. Therefore, in recent years, more and more semiconductor enterprises have started to process wafers by a laser scribing method without mechanical contact.
The laser scribing utilizes the characteristic that the laser energy density is higher than the ablation threshold of the wafer to scribe the surface of the wafer, pits or stress concentration is generated in a scribing area, the wafer is split by a wafer splitter in the later period, the wafer is separated according to a scribing path, and the wafer is cut. Laser scribing has many advantages over mechanical cutting. Laser scribing is non-mechanical cutting, and wafer breakage and edge breakage can be completely avoided; the laser scribing has small influence on the electrical performance of the wafer, and higher yield can be provided; the laser scribing speed is high, and the processing efficiency is high. However, laser scribing also has disadvantages in that the wafer surface is often contaminated with droplets and fumes during the laser scribing process; in addition, high energy laser light acts on the wafer, creating a heat affected zone.
Recently, the semiconductor industry has proposed a new laser stealth dicing process. In the laser invisible cutting, a laser focus is focused inside a wafer and moves along a cutting path, and a modified layer is formed inside the wafer due to the fact that the laser energy density is higher than the ablation threshold of the wafer, and stress concentration is formed at the position; then, the wafer is subjected to a splitting process to be broken at the stress concentration position, thereby realizing cutting. Since laser stealth dicing is also a dicing of a wafer by laser, stealth dicing also has various advantages of laser scribing. In addition, stealth dicing has advantages not available with laser scribing. Firstly, the cutting path of the invisible cutting is extremely fine, so that the waste of the wafer can be avoided; secondly, because the cutting process is carried out in the wafer, the wafer is not polluted by liquid drops and smoke; finally, the heat affected zone is not formed inside the wafer due to laser energy deposition. However, as the demand for chips increases, the efficiency of laser stealth dicing does not meet the related requirements, and therefore, the improvement of the efficiency of laser stealth dicing is an urgent problem to be solved in the semiconductor industry.
Generally, the semiconductor industry increases the processing efficiency by increasing the laser energy to form a larger modified layer to reduce the number of stealth cuts, but this results in an enlarged damaged area inside the wafer. Therefore, there is a need in the semiconductor industry to provide a novel process that can improve both the cutting efficiency and the cutting quality.
Disclosure of Invention
The invention provides a laser cutting device and method for controlling plasma to regulate and control crack propagation by an electromagnetic field. Firstly, a laser beam is converged into a workpiece to be processed to form a high-energy focal spot, workpiece materials at the focal spot absorb energy and then are gasified and ionized to form plasma, and the plasma expands and impacts the materials to form cracks. And synchronously, electrifying current on the left side and the right side of the processed workpiece along the cutting direction, so that the plasma moves under the action of the electric field force. Synchronously, a magnetic field is generated, causing the plasma to move under the action of lorentz forces. This accelerates the plasma, and further impacts the formed crack, thereby propagating the crack. The cracks are longer than those obtained by an unmodified invisible cutting method, so that the times of invisible cutting of the wafer are obviously reduced, and the processing efficiency is improved; and because the crack is longer, the cross section quality of the wafer is better, and the defects such as fragments, edge breakage and the like are less prone to generating.
According to an aspect of an embodiment of the present invention, there is provided a laser cutting apparatus including: a multi-axis mobile platform; the imaging system is used for acquiring a surface image of a workpiece to be processed on the multi-axis mobile platform; the invisible cutting device is used for generating laser beams which are converged into the processed workpiece to enable the workpiece materials to be gasified and ionized to form plasma; and an electromagnetic field generating device for generating an electric field force and a magnetic field force applied to the plasma to accelerate the plasma.
In the laser cutting device, the laser beam generated by the invisible cutting device is perpendicular to the processed workpiece.
In the above laser cutting apparatus, the stealth cutting apparatus includes: an ultrafast laser generating a laser beam; the laser beam expander expands the diameter of the laser beam to form a collimated laser beam; the reflector group is positioned behind the laser beam expander and reflects the laser beam to the processing workpiece; and a focusing objective lens for focusing the laser beam reflected by the reflector group.
In the above laser cutting apparatus, the imaging system comprises: an illumination light source emitting an illumination beam; a reflector that reflects the illumination beam toward the set of reflectors of the stealth cutter; and the imaging lens is used for imaging a reverse loop formed after the illumination light beam irradiates the surface of the workpiece to be processed on the CCD camera.
In the above laser cutting apparatus, the electromagnetic field generating device includes: electrodes arranged on both sides of the workpiece in the cutting direction; and the magnets are arranged on the multi-axis moving platform on two sides of the processed workpiece in a direction perpendicular to the cutting direction.
According to another aspect of the embodiments of the present invention, there is provided a laser cutting method including the laser cutting apparatus, the method including:
step 1, planning a processing track of a processing workpiece;
step 4, adjusting the electromagnetic field generating device to enable current to pass along the cutting direction, enabling the processed workpiece to be in a magnetic field, and enabling Lorentz force to be vertical to the XY surface of the multi-axis moving platform and face upwards;
and 7, applying mechanical external force to the surface of the machined workpiece by using a wafer separator according to a preset cutting path to realize complete separation of the machined workpiece.
In the above laser cutting method, the current passing through the work piece is 0.1A to 600A.
In the laser cutting method, the magnetic field intensity is 100Gs to 1.5T.
The laser cutting device and the method for controlling the plasma to regulate and control the crack propagation by the electromagnetic field obviously improve the production efficiency and the production quality of the traditional invisible cutting and can quickly obtain a processed workpiece with good cross section flatness. Compared with the traditional wafer cutting method, the method controls the movement direction and speed of the plasma by using the electromagnetic field, so that the plasma impacts cracks, the cracks can be controllably expanded, the flatness of the cross section of the wafer can be obviously improved, the cutting efficiency can be greatly improved, and the bottleneck problem of invisible cutting after the thickness of the wafer is reduced is solved.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Fig. 1 shows a front view of a laser cutting apparatus for regulating crack propagation by electromagnetic field controlled plasma according to an embodiment of the present invention.
Fig. 2 shows a top view of an electromagnetic field controlled plasma crack propagation regulated laser cutting device according to an embodiment of the present invention.
Fig. 3 is a diagram illustrating the effect of lorentz force on the impact of plasma on cracks in a laser cutting method for regulating crack propagation by electromagnetic field control plasma according to an embodiment of the invention.
Description of reference numerals:
1-ultrafast laser;
2-a laser beam expander;
3-an illumination light source;
4-a CCD camera;
5-an imaging lens;
6-a reflector;
7-a laser mirror;
8-a focusing objective lens;
9-a multi-axis mobile platform;
10-a base station;
11-an electrode;
12-a magnet;
13-stealth cutting laser focal spot;
14-machining the workpiece;
15-a laser beam;
16-illumination beam.
Detailed Description
The laser cutting device for regulating crack propagation by controlling plasma through an electromagnetic field comprises: a multi-axis mobile platform 9; the imaging system is used for acquiring a surface image of the workpiece 14 processed on the multi-axis mobile platform 9; the invisible cutting device is used for generating a laser beam 15, the laser beam 15 is converged into a workpiece 14 to be processed to form a high-energy invisible cutting laser focal spot 13, the workpiece material at the focal spot absorbs energy and then is gasified and ionized to form plasma, and the plasma expands and impacts the material to form cracks; and an electromagnetic field generating device for generating an electric force and a magnetic force (Lorentz force) applied to the plasma to move the plasma. This accelerates the plasma, and further impacts the formed crack, thereby propagating the crack. The purpose of ultrafast laser invisible cutting for regulating and controlling crack propagation based on the plasma controlled by the electromagnetic field is achieved by controlling the space-time position and the field energy of the electromagnetic field. The invention utilizes the characteristics of smooth and intact cross section of the processed workpiece at the crack position after the invisible cutting and controllable crack propagation length and direction, and solves the bottleneck problem of the invisible cutting while maintaining and improving the quality of the ultrafast laser invisible cutting.
As shown in fig. 1 and 2, the stealth cutting device is placed on a base 10 and comprises an ultrafast laser 1, a laser beam expander 2, a laser reflector 7 and a focusing objective 8. The ultrafast laser 1 may be of the order of femtoseconds to nanoseconds and the focusing objective 8 may employ a multifocal lens. The laser beam 15 generated by the ultrafast laser 1 enters the laser beam expander 2 to expand the beam diameter to form a collimated laser beam, the collimated laser beam is reflected by the laser reflector 7 and then enters the focusing objective lens 8 (the beam reflected by the laser reflector 7 can be vertical to the workpiece 14), and a high-energy invisible cutting laser focal spot 13 is formed by the focusing action of the focusing objective lens 8 and acts inside the workpiece 14. During this process, the fluence of the stealth scribe laser focal spot 13 is greater than the ablation threshold of the processed workpiece 14, while the fluence of other areas outside of the stealth scribe laser focal spot 13 is less than the ablation threshold of the processed workpiece 14. Inside the workpiece 14, the ultrafast laser beam physically damages a region near the stealth dicing laser focal spot 13, and causes light-induced damage such as melting, vaporization, and plasmatization, thereby forming a modified spot. While the area around the stealth scribe laser focal spot 13 inside the machined workpiece 14 is not affected by the laser beam generated by the ultrafast laser 1.
The magnetic field generated by the electromagnetic field generating device can be a steady magnetic field, an alternating magnetic field or a magnetic pulse. The current generated by the electromagnetic field generating device can be direct current, alternating current, current pulse or induced current. The stable magnetic field, the alternating magnetic field, the magnetic pulse, the direct current, the alternating current, the pulse current and the induction current can be matched at will.
The electromagnetic field generating device comprises electrodes 11, wherein the electrodes 11 are clamped at two sides of a processing workpiece 14 along a cutting direction, current passes through the processing workpiece 14 after the electrodes are electrified, an electric field is formed at a modification point, and the formed electric field can apply electric field force to plasma, so that the plasma can accelerate in a specific direction under the action of the electric field.
The electromagnetic field generating device comprises at least one pair of magnets 12, and the magnets 12 are fixed on the multi-axis motion platform 9 and move along with the multi-axis motion platform 9. The N-pole portion and S-pole portion of the magnet 12 are respectively placed on both sides of the work piece 14 perpendicular to the cutting direction, so that the work piece 14 is always in the magnetic field, and the lorentz force is directed upward perpendicular to the XY plane of the multi-axis motion stage 9.
The imaging system comprises an illumination light source 3, a CCD camera 4, an imaging lens 5 and a reflector 6. The imaging optical path of the imaging system is a coaxial imaging optical path, the illumination light source 3 emits an illumination light beam 16, the light beam penetrates through the laser reflector 7 after being reflected by the reflector 6 and enters the focusing objective lens 8, at the moment, the light beam cannot physically damage the processed workpiece 14 and only can irradiate the surface of the processed workpiece 14, then the light beam forms a reverse loop, enters the imaging lens 5 and is focused by the imaging lens to finally image on the CCD camera 4.
The multi-axis moving platform 9 is placed on the base 10, and the work 14 is fixed to the multi-axis moving platform 9 by a jig. By utilizing the characteristic of the coaxial imaging light path, the upper surface of the workpiece 14 can be clearly imaged on the CCD camera 4 only by moving the Z axis of the multi-axis motion platform 9, and the Z axis position at the moment is set as a reference, namely a 0 coordinate point. Further by moving the Z-axis, a desired focal spot may be formed within the interior of the machined workpiece 14. In addition, by moving the X-axis and the Y-axis of the multi-axis motion stage 9, the cutting of the two-dimensional plane of the work piece 14 can be realized.
In an exemplary embodiment, a laser cutting method for regulating crack propagation by controlling plasma through an electromagnetic field is further provided, and the processed workpiece 14 is cut by using the laser cutting device, which comprises the following specific steps.
Step 1, planning a processing track of a processing workpiece 14 according to a processing requirement, wherein the processing track is reasonably planned for a brittle material and is realized through a multi-axis mobile platform 9.
And 2, adjusting the Z axis of the multi-axis moving platform 9 to enable the surface of the processed workpiece 14 to be imaged in an imaging system, and further setting a reference point and preparing for adjusting a proper feeding amount to form a needed invisible cutting laser focal spot 13.
And 3, continuously adjusting the Z axis of the multi-axis mobile platform 9, and setting the position of the Z axis as a reference point when the surface of the processed workpiece 14 is clearly imaged in the CCD camera 4 of the imaging system.
And 4, setting the invisible cutting laser focal spot 13 of the laser beam generated by the invisible cutting device in the machining workpiece 14 according to the machining requirement.
And 5, adjusting the electromagnetic field generating device to enable current to pass along the cutting direction, enabling the processed workpiece to be in the magnetic field, and enabling the Lorentz force to be vertical to the XY surface of the multi-axis moving platform and face upwards. The current for over-machining the workpiece may be 0.1A to 600A. The magnetic field strength can be 100Gs to 1.5T.
And 6, turning on a power supply of the electromagnetic field generating device.
And 7, adjusting the X axis and the Y axis of the multi-axis motion platform, and guiding the machined workpiece to move according to a set machining track so as to form a modified layer in the machined workpiece.
And 8, applying mechanical external force to the surface of the machined workpiece by using a wafer separator according to a preset cutting path to realize complete separation of the machined workpiece.
The selection range of the processing workpiece material can be glass, Si, Ge, SiC, AlN, GaN, ZnO, GaAs, InSb, GaAsAl, GaAsP, Ge-Si, GaAs-GaP, diamond, sapphire, phthalocyanine, copper phthalocyanine, polyacrylonitrile and other semiconductor materials. The following will describe the dicing method using a silicon wafer as an example.
1. The silicon wafer is placed on a multi-axis motion stage 9.
2. And opening the invisible cutting device, but not opening the ultrafast laser 1, wherein the ultrafast laser 1 adopts a picosecond laser, the wavelength is 1064nm, the pulse width is 200ps, the pulse energy is 10uJ, and the frequency is 80 kHz.
3. The laser focus is found by means of the CCD camera 4.
4. And operating the multi-axis motion platform 9, and adjusting the position of the silicon wafer in the Z-axis direction to focus the laser focus into the silicon wafer, wherein the distance between the laser focus and the surface of the silicon wafer is 100 um.
5. And adjusting the electromagnetic field generating device to enable current to pass along the cutting direction, so that the processed workpiece is in a magnetic field, and the Lorentz force is vertical to the XY surface of the multi-axis moving platform and faces upwards. The current for the over-machined workpiece was 1A. The magnetic field strength is 0.2T.
6. And turning on the power supply of the electromagnetic field generating device.
7. And opening the laser of the invisible cutting device.
8. And adjusting the X axis and the Y axis of the multi-axis motion platform 9, and guiding the silicon wafer to move according to a set processing track, so that a modified layer is formed in the silicon wafer.
9. After the above steps, the silicon wafer is taken off from the multi-axis motion platform 9, and the silicon wafer is sliced by using the slicing machine.
10. The cut silicon wafer was observed under a scanning electron microscope and an atomic force microscope.
Claims (8)
1. A laser cutting apparatus, comprising:
a multi-axis mobile platform;
the imaging system is used for acquiring a surface image of a workpiece to be processed on the multi-axis mobile platform;
the invisible cutting device is used for generating laser beams which are converged into the processed workpiece to enable the workpiece materials to be gasified and ionized to form plasma; and
and the electromagnetic field generating device is used for generating electric field force and magnetic field force which are applied to the plasma to accelerate the plasma.
2. The laser cutting device of claim 1, wherein the laser beam generated by the invisible cutting device is perpendicular to a workpiece to be machined.
3. The laser cutting device according to claim 1, wherein the invisible cutting device comprises:
an ultrafast laser generating a laser beam;
the laser beam expander expands the diameter of the laser beam to form a collimated laser beam;
the reflector group is positioned behind the laser beam expander and reflects the laser beam to the processing workpiece; and
and the focusing objective lens is used for focusing the laser beams reflected by the reflector group.
4. The laser cutting apparatus of claim 3, wherein the imaging system comprises:
an illumination light source emitting an illumination beam;
a reflector that reflects the illumination beam toward the set of reflectors of the stealth cutter; and
and the imaging lens is used for imaging a reverse loop formed after the illumination light beam irradiates the surface of the processed workpiece on the CCD camera.
5. The laser cutting apparatus according to claim 1, wherein the electromagnetic field generating device comprises:
electrodes arranged on both sides of the workpiece in the cutting direction; and
and the magnets are arranged on the multi-axis moving platform on two sides of the processed workpiece in a direction perpendicular to the cutting direction.
6. A laser cutting method, comprising the laser cutting apparatus of any one of claims 1 to 5, the method comprising:
step 1, planning a processing track of a processing workpiece;
step 2, adjusting the Z axis of the multi-axis mobile platform to enable the surface of the processed workpiece to be imaged in the imaging system, and setting the position of the Z axis at the moment as a datum reference point when the surface of the processed workpiece is clearly imaged in the imaging system;
step 3, setting the invisible cutting laser focal spot of the laser beam generated by the invisible cutting device in the processing workpiece;
step 4, adjusting the electromagnetic field generating device to enable current to pass along the cutting direction, enabling the processed workpiece to be in a magnetic field, and enabling Lorentz force to be vertical to the XY surface of the multi-axis moving platform and face upwards;
step 5, turning on a power supply of the electromagnetic field generating device;
step 6, adjusting the X axis and the Y axis of the multi-axis motion platform, and guiding the processed workpiece to move according to a set processing track so as to form a modified layer in the processed workpiece;
and 7, applying mechanical external force to the surface of the machined workpiece by using a wafer separator according to a preset cutting path to realize complete separation of the machined workpiece.
7. The laser cutting method according to claim 6, wherein the current passing through the work piece is 0.1A to 600A.
8. The laser cutting method according to claim 6, wherein the magnetic field strength is 100Gs to 1.5T.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111702353A (en) * | 2020-06-30 | 2020-09-25 | 松山湖材料实验室 | Laser wafer peeling device and laser wafer peeling method |
| CN114289884A (en) * | 2021-12-31 | 2022-04-08 | 华侨大学 | Laser-induced plasma processing device and method by utilizing bimetal alloy target |
| CN114311356A (en) * | 2021-12-31 | 2022-04-12 | 华侨大学 | Kinetic energy assisted laser-induced plasma processing device and method |
| CN114985990A (en) * | 2022-07-14 | 2022-09-02 | 中国科学院半导体研究所 | Double-laser splitting method and device |
| CN115781059A (en) * | 2023-02-08 | 2023-03-14 | 佛山科学技术学院 | Laser cutting method and system based on brittle material |
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| CN111702353B (en) * | 2020-06-30 | 2022-04-05 | 松山湖材料实验室 | Laser wafer peeling device and laser wafer peeling method |
| CN114289884A (en) * | 2021-12-31 | 2022-04-08 | 华侨大学 | Laser-induced plasma processing device and method by utilizing bimetal alloy target |
| CN114311356A (en) * | 2021-12-31 | 2022-04-12 | 华侨大学 | Kinetic energy assisted laser-induced plasma processing device and method |
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