KR100681390B1 - A semiconductor wafer dicing and scribing system and appratus with a high speed laser beam focus positioning system to arbitrary 3D positions and laser beam diffraction system - Google Patents

A semiconductor wafer dicing and scribing system and appratus with a high speed laser beam focus positioning system to arbitrary 3D positions and laser beam diffraction system Download PDF

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Publication number
KR100681390B1
KR100681390B1 KR1020050022563A KR20050022563A KR100681390B1 KR 100681390 B1 KR100681390 B1 KR 100681390B1 KR 1020050022563 A KR1020050022563 A KR 1020050022563A KR 20050022563 A KR20050022563 A KR 20050022563A KR 100681390 B1 KR100681390 B1 KR 100681390B1
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South Korea
Prior art keywords
laser beam
scribing
high speed
focusing
laser
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KR1020050022563A
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Korean (ko)
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KR20060100773A (en
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김정묵
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(주)한빛레이저
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    • AHUMAN NECESSITIES
    • A01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01FPROCESSING OF HARVESTED PRODUCE; HAY OR STRAW PRESSES; DEVICES FOR STORING AGRICULTURAL OR HORTICULTURAL PRODUCE
    • A01F12/00Parts or details of threshing apparatus
    • A01F12/30Straw separators, i.e. straw walkers, for separating residual grain from the straw
    • AHUMAN NECESSITIES
    • A01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01FPROCESSING OF HARVESTED PRODUCE; HAY OR STRAW PRESSES; DEVICES FOR STORING AGRICULTURAL OR HORTICULTURAL PRODUCE
    • A01F11/00Threshing apparatus specially adapted for maize; Threshing apparatus specially adapted for particular crops other than cereals
    • AHUMAN NECESSITIES
    • A01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01FPROCESSING OF HARVESTED PRODUCE; HAY OR STRAW PRESSES; DEVICES FOR STORING AGRICULTURAL OR HORTICULTURAL PRODUCE
    • A01F12/00Parts or details of threshing apparatus
    • A01F12/18Threshing devices
    • AHUMAN NECESSITIES
    • A01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01FPROCESSING OF HARVESTED PRODUCE; HAY OR STRAW PRESSES; DEVICES FOR STORING AGRICULTURAL OR HORTICULTURAL PRODUCE
    • A01F12/00Parts or details of threshing apparatus
    • A01F12/44Grain cleaners; Grain separators
    • A01F12/442Rotary cleaners
    • AHUMAN NECESSITIES
    • A01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01FPROCESSING OF HARVESTED PRODUCE; HAY OR STRAW PRESSES; DEVICES FOR STORING AGRICULTURAL OR HORTICULTURAL PRODUCE
    • A01F7/00Threshing apparatus
    • A01F7/02Threshing apparatus with rotating tools

Abstract

The present invention uses a laser beam having a deflecting device of a laser beam, such as an optoacoustic modulator, a galvano mirror or a polygon mirror, and a laser beam having a focusing device capable of moving the focus position in any three dimensions at high speed. It is about how to crush. The deflecting device and the focusing device are used alone or simultaneously. Application of a processing method for dicing or scribing a semiconductor wafer using a laser beam, particularly a UV laser beam having a wavelength of 355 nm has been actively performed. In the case of dicing or scribing using a laser beam, the cutting width can be made smaller than when using a mechanical cutting method using a diamond saw blade without causing problems such as cracking due to physical load because it does not come into contact with the workpiece. Yield per sheet can be increased. Especially in the case of thin semiconductor wafers, laser cutting is superior to mechanical cutting. Despite these advantages, however, chipping phenomena occurring in specific pattern materials are a barrier to the application of lasers due to poor cutting and thermal effects compared to mechanical work, and contamination of semiconductor wafers due to cutting by-products.
In the present invention, the laser beam from the laser generator is deflected dynamically using a photoacoustic modulator, or the parallel laser beam is transmitted by adjusting the laser beam to a laser intensity suitable for processing by lengthening the laser beam in only one direction with a cylindrical lens. By superimposing the focused optical system with a high speed moving device that can move the focusing optical system that focuses the mass at high speed forward, backward, left, right and up and down to irradiate the focal position of the object with high speed, The present invention relates to a technology capable of shortening the processing time as well as improving the machining quality of the cut surface by removing the chipping phenomenon occurring in the pattern material.
 Laser beam dicing, scribing, semiconductor wafer, laser cutting, photoacoustic modulator focusing position, high speed movement, focusing device, laser processing

Description

Laser dicing and scribing method of semiconductor wafer using optical focusing device and optical deflecting device which can move the focusing position of laser beam at high speed in any three dimensions {A semiconductor wafer dicing and scribing system and appratus with a high speed laser beam focus positioning system to arbitrary 3D positions and laser beam diffraction system}

1: Configuration diagram of a laser beam generator with a focusing position fast moving focusing device

Explanation of the code | symbol about the principal part of FIG.

  1: laser beam generator 2: photoacoustic modulator

  3: focused optical system 4: focused optical system

  5: laser beam 6: focus position

  7: Processed object and work stage

2 is a structural diagram of a focusing optical system for three axes of a focal position high speed mobile focusing apparatus of a laser beam;

Explanation of the code | symbol about the principal part of FIG.

   8: laser beam 9: X-axis lens shifter

  10: cylindrical optical lens for X-axis focusing 11: laser beam with X-axis variable

  12: Y-axis lens shift device 13: Cylindrical optical lens for Y-axis focusing

  14: X- and Y-axis laser beam 15: Z-axis lens shift device

  16: Laser beam focus with X, Y and Z axes

Conventionally, a mechanical cutting method for breaking after diamond blade dicing or scribing and a processing method for dicing a semiconductor wafer using a laser beam have been made. The advantage of the mechanical method is that it is possible to obtain an excellent cutting surface quality, it is difficult to maintain a uniform quality due to saw blade wear, and has problems such as chipping or cracking. Especially in the case of thin wafers (50-150㎛), the cracks and cracks caused by the diamond saw blade load is severe and can only be processed at a very low speed. In order to solve this problem, the application of dicing using a laser beam is actively in progress. This method does not cause a problem of cracking due to physical loads because it does not come into contact with the workpiece, and can further reduce the cutting width, thereby increasing the yield per wafer. However, due to the chipping phenomena occurring in certain pattern materials on the wafer, the quality of the cut surface is inferior to the mechanical work, which makes it difficult to apply the dicing or scribing method using the laser beam.

The present invention superimposes an optoacoustic modulator composed of a focused optical system as a deflector for a laser low beam in order to improve the quality of the cutting surface which is poor compared to the mechanical work due to the chipping phenomenon while utilizing the advantages of the processing using the laser beam as it is. Is to use the processing method. The laser beam emitted from the laser generator is deflected dynamically by using an optoacoustic modulator, or the cylindrical lens is focused in one direction by lengthening the laser beam in one direction to focus the parallel laser beam transmitted by adjusting the laser intensity suitable for processing. It is possible to move the focusing optical system with a small mass forward, backward, left, right and up and down at high speed so that the focusing optical system can move to the focal position of the object at high speed. The present invention relates to a technology capable of shortening the processing time as well as improving the machining quality of the cutting surface by eliminating the chipping phenomenon.

The present invention is to solve the above technical problem is described with reference to FIG. 1 as follows.

(a) dynamically deflecting the beam from the laser generator 1 using the optoacoustic modulator 2;

(b) changing the beam shape with the cylindrical lens 3 and

(c) A fast focusing optical system capable of moving the focusing position 6 by moving the dynamically beamed laser beams forward, backward, left, right, up and down in a narrow zero region within the size of the focusing optical system 3. Focusing on the moving device (4) and

(d) The laser beam 5 is irradiated to the desired focal position 6 using the focusing optical high speed moving device 4 on the surface of the workpiece 7 at high speed along a predetermined cutting line of the semiconductor wafer. A method and apparatus comprising dicing or scribing without a chipping phenomenon.

The frequency of the dynamic deflection of the beam using the optoacoustic modulator 2 can reach several hundred kHz and the effect of the deflection can be obtained from several tens of micrometers to several millimeters on the surface of the object depending on the distance. In addition, in the method of deflecting a laser beam by simultaneously operating the optoacoustic modulator 2 when the stage 7 of the existing workpiece is moved in the working direction, the present invention has a mass of the laser beam generator 1 or the workpiece. High-speed deflection of the laser beam 5 by allowing the focused optical system 3 to irradiate the focus position 6 at high speed by using the focused optical system high speed moving device 4, which is relatively less than the stage 7 of Made it possible. As a specific method of the laser beam generator 1 with the focusing position fast moving focusing device 4,

end. Driving devices such as servo motors, linear motors and piezoelectric elements

I. Mechanical parts such as ball screw and LM guide

All. Position recognition devices such as encoders and linear scales can be combined. A piezoelectric element is used as a driving device for the fastest focusing position movement in minute areas. The focusing optical system 3 for one-axis movement may use spherical optical lenses and cylindrical optical lenses to implement two or more axes (X-axis, Y-axis).

 In addition, the focal position high-speed moving focusing apparatus may have a biaxial focusing optical structure. As shown in FIG. 2, when the laser beam 8 passes through the cylindrical optical lens 10 that focuses on the X axis, the laser beam 8 is focused only on the X axis, and the Y axis becomes parallel light. When the X-axis focusing cylindrical optical lens 10 is moved to the X-axis lens shifting device 9, the focus is shifted in the X-axis direction at the focus position 7. Similarly, when passing through the cylindrical optical lens 11 focusing and moving the laser beam 10 focused on the X-axis to the Y-axis cylindrical surface focusing the laser beam 10 focused and moved on the X-axis also on the Y-axis Passing through the optical lens 11, the laser beam 13 moved also in the Y axis can be obtained, and as a result, the laser beam focus 13 that is variable in the X and Y axes can be obtained.

At this time, the focal lengths of the X-axis focusing cylindrical optical lens 9 and the Y-axis focusing cylindrical optical lens 11 differ depending on the positions of the respective lenses.

The present invention focuses on laser beams to improve processing efficiency when laser pulses are continuously irradiated at the same point when dicing or scribing a semiconductor wafer using a Q-switched kHz high-repetitive pulsed laser beam. Semiconductor industry by deflecting the photoacoustic modulator with a focusing device capable of driving the fastest focal position movement in the minute area and the cylindrical lens to make a long shape beam to one side with laser intensity suitable for semiconductor wafer processing. The present invention provides a dicing or scribing method having high industrial utility in fields requiring precise results.

Claims (7)

  1. A method of dicing or scribing a semiconductor wafer by irradiating a pulse laser beam having a high repetition frequency of kHz or higher along a predetermined cutting line, wherein:
    Laser beam is deflected dynamically using optoacoustic modulator to improve the processing performance by overlapping laser pulses on the same target, and chipping the semiconductor surface by irradiating at the focal position of the workpiece at high speed using the deflected beam. A laser dicing and scribing method for a semiconductor wafer using an optical focusing device and an optical deflecting device, which can move a focal position of a laser beam in an arbitrary three-dimensional manner by preventing the damage and improving processing quality and speed.
  2.  A method of dicing or scribing a semiconductor wafer by irradiating a pulse laser beam having a high repetition frequency of kHz or higher along a predetermined cutting line, wherein:
    A focus position high speed moving focusing device that focuses a laser beam in order to improve processing performance due to overlapping laser pulses on the same target, and it uses high speed using a three-axis focusing optical system that can move in any three-dimensional direction at high speed. A semiconductor using an optical focusing device and an optical deflecting device that can move the focusing position of a laser beam in any three dimensions at high speed by irradiating the focal position of the workpiece to prevent chipping on the surface of the semiconductor, thereby improving the quality and speed of processing. Method of laser dicing and scribing wafers.
  3. The method of claim 2,
    The focusing optical system,
    A device for driving an arbitrary three-dimensional space, using a piezoelectric element (PZT), which can move a focal point of a laser beam in any three-dimensional manner, and a semiconductor wafer using an optical deflecting device. Laser dicing and scribing method.
  4. A method of dicing or scribing a semiconductor wafer by irradiating a pulse laser beam having a high repetition frequency of kHz or higher along a predetermined cutting line, wherein:
    In order to improve the processing characteristics, the laser beam focusing shape is changed long in the cutting direction by using a cylindrical lens suitable for semiconductor wafer processing, and the cylindrical lens is used in a variable focusing region using one axis or two axes perpendicularly. A laser dicing and scribing method of a semiconductor wafer using an optical focusing device and an optical deflecting device capable of moving a focal position of a laser beam irradiating and processing an arbitrary laser beam in an arbitrary three-dimensional manner at high speed.
  5. The method of claim 1,
    When processing other materials with high laser absorption rate, high-speed cutting and scribing quality can be obtained by dynamically deflecting the laser beam by using a photoacoustic modulator with a focusing optical high-speed moving device to realize superimposition processing at high speed. A laser dicing and scribing method for a semiconductor wafer using an optical focusing device and an optical deflecting device capable of moving a focal position of a laser beam in any three dimensions at high speed.
  6. A method of dicing or scribing a semiconductor wafer by irradiating a pulse laser beam having a high repetition frequency of kHz or higher along a predetermined cutting line, wherein:
    Due to the high output pulse laser beam, the processing characteristics become worse during main processing. Therefore, after the main processing is performed with high output, the laser output is reduced and the post processing is slow. Laser dicing and scribing of a semiconductor wafer using an optical focusing device and an optical deflecting device capable of moving the focusing position of the laser beam at a high speed in any three dimensions, characterized in that it is used as a light source and a part as a post-processing light source. Way.
  7. delete
KR1020050022563A 2005-03-18 2005-03-18 A semiconductor wafer dicing and scribing system and appratus with a high speed laser beam focus positioning system to arbitrary 3D positions and laser beam diffraction system KR100681390B1 (en)

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US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9023732B2 (en) 2013-03-15 2015-05-05 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9093390B2 (en) 2013-03-07 2015-07-28 Applied Materials, Inc. Conformal oxide dry etch
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9174307B2 (en) 2009-09-02 2015-11-03 Samsung Display Co., Ltd. Substrate cutting apparatus and method for cutting substrate using the same
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9236266B2 (en) 2011-08-01 2016-01-12 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299582B2 (en) 2013-11-12 2016-03-29 Applied Materials, Inc. Selective etch for metal-containing materials
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components

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US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch

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KR20030026867A (en) * 2001-09-26 2003-04-03 가부시끼가이샤 도시바 Method of manufacturing semiconductor device

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US9174307B2 (en) 2009-09-02 2015-11-03 Samsung Display Co., Ltd. Substrate cutting apparatus and method for cutting substrate using the same
US9236266B2 (en) 2011-08-01 2016-01-12 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US9012302B2 (en) 2011-09-26 2015-04-21 Applied Materials, Inc. Intrench profile
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9093390B2 (en) 2013-03-07 2015-07-28 Applied Materials, Inc. Conformal oxide dry etch
US9023732B2 (en) 2013-03-15 2015-05-05 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9093371B2 (en) 2013-03-15 2015-07-28 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9153442B2 (en) 2013-03-15 2015-10-06 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9184055B2 (en) 2013-03-15 2015-11-10 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9991134B2 (en) 2013-03-15 2018-06-05 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9209012B2 (en) 2013-09-16 2015-12-08 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9711366B2 (en) 2013-11-12 2017-07-18 Applied Materials, Inc. Selective etch for metal-containing materials
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9299582B2 (en) 2013-11-12 2016-03-29 Applied Materials, Inc. Selective etch for metal-containing materials
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch

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