CN111055028A - Laser cutting device and method for expanding controllable cracks based on plasma - Google Patents
Laser cutting device and method for expanding controllable cracks based on plasma Download PDFInfo
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- CN111055028A CN111055028A CN201911404219.7A CN201911404219A CN111055028A CN 111055028 A CN111055028 A CN 111055028A CN 201911404219 A CN201911404219 A CN 201911404219A CN 111055028 A CN111055028 A CN 111055028A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Abstract
Disclosed are a laser cutting apparatus and method for a plasma-based crack propagation controllable, the apparatus including: a multi-axis mobile platform (9); the imaging system is used for acquiring a surface image of a workpiece (14) to be processed on the multi-axis mobile platform (9); the invisible cutting device is used for generating a laser beam (15), the laser beam (15) is converged into a workpiece (14) to be processed, so that workpiece materials at the invisible cutting laser focal spot (13) are gasified and ionized to form plasma, and the plasma expands and impacts the materials to form cracks; and one or more auxiliary laser devices for generating an auxiliary laser beam (16), wherein the focal spot of the auxiliary laser beam (16) is converged at the plasma and crack area inside the processed workpiece (14), the expansion of the plasma is accelerated, and the formed crack is further impacted to expand the crack. The invention realizes the controllability of the crack propagation length and direction by controlling the position and the energy of the auxiliary laser beam (16).
Description
Technical Field
The invention belongs to the field of mechanical cutting processing, relates to a high-precision ultrafast laser invisible cutting technology, and particularly relates to a laser cutting device and method for expanding controllable cracks based on plasma.
Background
At present, the semiconductor industry widely uses mechanical cutting method to cut the wafer. Mechanical dicing of wafers is the direct dicing of wafers using a dicing blade rotating at high speed. The mechanical cutting has the advantages of simple and convenient operation and low requirement on a cutting instrument. Mechanical cutting has a number of disadvantages. Firstly, the mechanical cutting is easy to cause edge breakage and damage of the wafer; secondly, the cutting path of mechanical cutting is large, which causes unnecessary waste; finally, the blades used for mechanical cutting are prone to wear, need to be replaced frequently, and are relatively high in cost. These disadvantages are due, ultimately, to the mechanical contact of the blade with the material. Therefore, in recent years, more and more semiconductor enterprises have started to process wafers by a laser scribing method without mechanical contact.
The laser scribing utilizes the characteristic that the laser energy density is higher than the ablation threshold of the wafer to scribe the surface of the wafer, pits or stress concentration is generated in a scribing area, the wafer is split by a wafer splitter in the later period, the wafer is separated according to a scribing path, and the wafer is cut. Laser scribing has many advantages over mechanical cutting. Laser scribing is non-mechanical cutting, and wafer breakage and edge breakage can be completely avoided; the laser scribing has small influence on the electrical performance of the wafer, and higher yield can be provided; the laser scribing speed is high, and the processing efficiency is high. However, laser scribing also has disadvantages in that the wafer surface is often contaminated with droplets and fumes during the laser scribing process; in addition, high energy laser light acts on the wafer, creating a heat affected zone.
Recently, the semiconductor industry has proposed a new laser stealth dicing process. In the laser invisible cutting, a laser focus is focused inside a wafer and moves along a cutting path, and a modified layer is formed inside the wafer due to the fact that the laser energy density is higher than the ablation threshold of the wafer, and stress concentration is formed at the position; then, the wafer is subjected to a splitting process to be broken at the stress concentration position, thereby realizing cutting. Since laser stealth dicing is also a dicing of a wafer by laser, stealth dicing also has various advantages of laser scribing. In addition, stealth dicing has advantages not available with laser scribing. Firstly, the cutting path of the invisible cutting is extremely fine, so that the waste of the wafer can be avoided; secondly, because the cutting process is carried out in the wafer, the wafer is not polluted by liquid drops and smoke; finally, the heat affected zone is not formed inside the wafer due to laser energy deposition. However, as the demand for chips increases, the efficiency of laser stealth dicing does not meet the related requirements, and therefore, the improvement of the efficiency of laser stealth dicing is an urgent problem to be solved in the semiconductor industry.
Generally, the semiconductor industry increases the processing efficiency by increasing the laser energy to form a larger modified layer to reduce the number of stealth cuts, but this results in an enlarged damaged area inside the wafer. Therefore, there is a need in the semiconductor industry to provide a novel process that can improve both the cutting efficiency and the cutting quality.
Disclosure of Invention
The invention provides a laser cutting device and a laser cutting method for expanding controllable cracks based on plasma. Synchronously, auxiliary laser beams are introduced into two sides of a processed workpiece, the focus of the auxiliary laser beams is converged to a plasma and crack area in the processed workpiece, the plasma absorbs the energy of the auxiliary laser beams and then accelerates expansion, and the formed cracks are further impacted to expand. The purpose of ultrafast laser invisible cutting based on auxiliary laser enhanced plasma regulation and control of crack propagation is achieved by controlling the time-space position and energy of the auxiliary laser beam.
According to an aspect of an embodiment of the present invention, there is provided a laser cutting apparatus including:
a multi-axis mobile platform;
the imaging system is used for acquiring a surface image of a workpiece to be processed on the multi-axis mobile platform;
the invisible cutting device is used for generating laser beams which are converged into the workpiece to be processed to enable the workpiece materials to be gasified and ionized to form plasma; and
one or more auxiliary laser devices for generating an auxiliary laser beam for irradiating the plasma to accelerate expansion thereof.
In the laser cutting device, the focal spot position of the auxiliary laser beam generated by the one or more auxiliary laser devices is around or coincident with the stealth cutting laser focal spot of the laser beam generated by the stealth cutting device.
In the laser cutting device, the energy density of the auxiliary laser beam in the material is less than the ablation threshold of the processed workpiece.
In the laser cutting device, the laser beam generated by the invisible cutting device is perpendicular to the processed workpiece.
In the above laser cutting apparatus, the stealth cutting apparatus includes: an ultrafast laser generating a laser beam; the laser beam expander expands the diameter of the laser beam to form a collimated laser beam; the reflector group is positioned behind the laser beam expander and reflects the laser beam to the processing workpiece; and a focusing objective lens for focusing the laser beam reflected by the reflector group.
In the above laser cutting apparatus, the imaging system comprises: an illumination light source emitting an illumination beam; a reflector that reflects the illumination beam toward the set of reflectors of the stealth cutter; and the imaging lens is used for imaging a reverse loop formed after the illumination light beam irradiates the surface of the processed workpiece on the CCD camera.
The auxiliary laser device of the laser cutting device comprises CO2Laser or solid state laser.
According to another aspect of the embodiments of the present invention, there is provided a laser cutting method including the laser cutting apparatus, the method including:
step 1, planning a processing track of a processing workpiece;
step 4, adjusting the focal spot position of the auxiliary laser beam generated by the one or more auxiliary laser devices to enable the auxiliary laser beam to be positioned around the focal spot of the invisible cutting laser or to be superposed with the focal spot of the invisible cutting laser;
and 6, applying mechanical external force to the surface of the machined workpiece by using a wafer separator according to a preset cutting path to realize complete separation of the machined workpiece.
In the laser cutting method, when the processing workpiece moves according to the set processing track, the focal spot position of the auxiliary laser beam is always around the invisible cutting laser focal spot or is overlapped with the invisible cutting laser focal spot.
The laser cutting device and the method for expanding controllable cracks based on the plasma remarkably improve the production efficiency and the production quality of the traditional invisible cutting and can quickly obtain a processed workpiece with good cross section flatness. Compared with the traditional wafer cutting method, the method has the advantages that the plasma is used for impacting the cracks, so that the cracks can be controllably expanded, the flatness of the cross section of the wafer can be obviously improved, the cutting efficiency can be greatly improved, and the bottleneck problem of invisible cutting after the thickness of the wafer is reduced is solved.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Fig. 1 shows a schematic structural diagram of a laser cutting apparatus for plasma-based propagation controlled cracking according to an embodiment of the present invention.
Fig. 2 shows a schematic structural diagram of a laser cutting apparatus for plasma-based propagation controlled cracking according to another embodiment of the present invention.
Fig. 3 shows a schematic structural diagram of a laser cutting apparatus for plasma-based propagation controlled cracking according to still another embodiment of the present invention.
Description of reference numerals:
1-ultrafast laser;
2-a laser beam expander;
3-an illumination light source;
4-a CCD camera;
5-an imaging lens;
6-a reflector;
7-a laser mirror;
8-a focusing objective lens;
9-a multi-axis mobile platform;
10-a base station;
11-a laser;
12-a focusing objective lens;
13-stealth cutting laser focal spot;
and 14, processing the workpiece.
Detailed Description
The laser cutting device for the controllable crack of the expansion based on plasma comprises: a multi-axis mobile platform 9; the imaging system is used for acquiring a surface image of the workpiece 14 processed on the multi-axis mobile platform 9; the invisible cutting device is used for generating a laser beam 15, the laser beam 15 is converged into a workpiece 14 to be processed to form a high-energy invisible cutting laser focal spot 13, the workpiece material at the focal spot absorbs energy and then is gasified and ionized to form plasma, and the plasma expands and impacts the material to form cracks; and one or more auxiliary laser devices for generating auxiliary laser beams 16, wherein the focal points of the auxiliary laser beams 16 are converged to the plasma and crack regions in the processed workpiece 14, and the plasma absorbs the energy of the auxiliary laser beams 16 and then accelerates expansion, so that the formed cracks are further impacted, and the cracks are expanded. The cracks are longer than those obtained by an unmodified invisible cutting method, so that the times of invisible cutting of the wafer are obviously reduced, and the processing efficiency is improved; and the longer crack can lead the cross section quality of the wafer to be better, and the defects of fragments, edge breakage and the like are less likely to be generated.
The invisible cutting device is arranged on a base station 10 and comprises an ultrafast laser 1, a laser beam expander 2, a laser reflector 7 and a focusing objective lens 8. The ultrafast laser 1 may be of the order of femtoseconds to nanoseconds and the focusing objective 8 may employ a multifocal lens. The laser beam 15 generated by the ultrafast laser 1 enters the laser beam expander 2 to expand the beam diameter to form a collimated laser beam, the collimated laser beam is reflected by the laser reflector 7 and then enters the focusing objective lens 8 (the beam reflected by the laser reflector 7 can be vertical to the workpiece 14), and a high-energy invisible cutting laser focal spot 13 is formed by the focusing action of the focusing objective lens 8 and acts inside the workpiece 14. During this process, the fluence of the stealth scribe laser focal spot 13 is greater than the ablation threshold of the processed workpiece 14, while the fluence of other areas outside of the stealth scribe laser focal spot 13 is less than the ablation threshold of the processed workpiece 14. Inside the workpiece 14, the ultrafast laser beam physically damages a region near the stealth dicing laser focal spot 13, and causes light-induced damage such as melting, vaporization, and plasmatization, thereby forming a modified spot. While the area around the stealth scribe laser focal spot 13 inside the machined workpiece 14 is not affected by the laser beam generated by the ultrafast laser 1.
The auxiliary laser device is arranged on a base station 10 and comprises a laser 11 and a focusing objective lens 12. The auxiliary laser beam 16 generated by the laser 11 forms a focal spot through the reflection of the reflector group and the focusing action of the focusing objective lens 12, and acts inside the processed workpiece 14. The focusing objective 12 may employ a multifocal lens. During this process, the density of the focal spot volume is formed to be less than the ablation threshold of the machined workpiece 14. In order to make the wavelength of the laser 11 easily absorbed by the plasma, the laser 11 may use CO with longer wavelength and stronger inverse-tough absorption coefficient2Lasers, solid state lasers, and the like.
In addition, there is no special requirement for the propagation direction of the auxiliary laser beam 16 of the auxiliary laser device, and any angle may be formed with respect to the propagation direction of the laser beam 15 of the stealth cutting device. The number of the auxiliary laser devices may be one or more. As shown in fig. 1, two of the auxiliary laser devices are installed above and on both sides of the workpiece 14 to be processed. As shown in fig. 2, one such auxiliary laser device is placed directly below the work piece 14. As shown in fig. 3, two of the auxiliary laser devices are installed on both sides of the work 14 to be processed in parallel to the XY plane.
The imaging system comprises an illumination light source 3, a CCD camera 4, an imaging lens 5 and a reflector 6. The imaging optical path of the imaging system is a coaxial imaging optical path, the illumination light source 3 emits an illumination light beam 17, the light beam penetrates through the laser reflector 7 after being reflected by the reflector 6 and enters the focusing objective lens 8, at the moment, the light beam cannot physically damage the processed workpiece 14 and only can irradiate the surface of the processed workpiece 14, then the light beam forms a reverse loop, enters the imaging lens 5 and is focused by the imaging lens to finally image on the CCD camera 4.
The multi-axis moving platform 9 is placed on the base 10, and the work 14 is fixed to the multi-axis moving platform 9 by a jig. By utilizing the characteristic of the coaxial imaging light path, the upper surface of the workpiece 14 can be clearly imaged on the CCD camera 4 only by moving the Z axis of the multi-axis motion platform 9, and the Z axis position at the moment is set as a reference, namely a 0 coordinate point. Further by moving the Z-axis, a desired focal spot may be formed within the interior of the machined workpiece 14. In addition, by moving the X-axis and the Y-axis of the multi-axis motion stage 9, the cutting of the two-dimensional plane of the work piece 14 can be realized.
In an exemplary embodiment, a laser cutting method for a plasma-based propagation-controlled crack is also provided, and the processed workpiece 14 is cut by using the laser cutting device, which comprises the following specific steps.
Step 1, planning a processing track of a processing workpiece 14 according to a processing requirement, wherein the processing track is reasonably planned for a brittle material and is realized through a multi-axis mobile platform 9.
And 2, adjusting the Z axis of the multi-axis moving platform 9 to enable the surface of the processed workpiece 14 to be imaged in an imaging system, and further setting a reference point and preparing for adjusting a proper feeding amount to form a needed invisible cutting laser focal spot 13.
And 3, continuously adjusting the Z axis of the multi-axis mobile platform 9, and setting the position of the Z axis as a reference point when the surface of the processed workpiece 14 is clearly imaged in a CCD camera of an imaging system.
And 4, setting the invisible cutting laser focal spot 13 of the laser beam generated by the invisible cutting device in the machining workpiece 14 according to the machining requirement.
And 5, adjusting the focal spot position of the auxiliary laser beam generated by the one or more auxiliary laser devices to enable the auxiliary laser beam to be positioned around the invisible cutting laser focal spot 13 or to be superposed with the invisible cutting laser focal spot 13.
And 6, adjusting the X axis and the Y axis of the multi-axis motion platform 9, and guiding the machined workpiece 14 to move according to a set machining track, so that a modified layer is formed inside the machined workpiece 14. In the process that the processing workpiece 14 moves on the multi-axis motion platform 9, according to the practical situation of plasma expansion during ultrafast laser cutting, the position of the focal spot of the selected auxiliary laser coincides with the plasma caused by ultrafast laser all the time, because the subfissure plasma is in a long strip shape, the specific interaction position of the auxiliary laser and the plasma is determined according to the process experiment effect, and the plasma absorbs the auxiliary laser and expands in volume to force the crack to further expand.
And 7, applying mechanical external force to the surface of the machined workpiece 14 by using a wafer separator according to a preset cutting path to realize complete separation of the machined workpiece 14.
The selection range of the processing workpiece material can be glass, Si, Ge, SiC, AlN, GaN, ZnO, GaAs, InSb, GaAsAl, GaAsP, Ge-Si, GaAs-GaP, diamond, sapphire, phthalocyanine, copper phthalocyanine, polyacrylonitrile and other semiconductor materials. The following will describe the dicing method using a silicon wafer as an example.
1. The silicon wafer is placed on a multi-axis motion stage 9.
2. And opening the invisible cutting device, but not opening the ultrafast laser 1, wherein the ultrafast laser 1 adopts a picosecond laser, the wavelength is 1064nm, the pulse width is 200ps, the pulse energy is 10uJ, and the frequency is 80 kHz.
3. The laser focus is found using the CCD camera 4 and the rangefinder.
4. And operating the multi-axis motion platform 9, and adjusting the position of the silicon wafer in the Z-axis direction to focus the laser focus into the silicon wafer, wherein the distance between the laser focus and the surface of the silicon wafer is 100 um.
5. The auxiliary laser device is adjusted such that its focal spot coincides with the stealth scribe laser focal spot 13. Wherein the laser 11 of the auxiliary laser device is a carbon dioxide laser, the wavelength is 10.2um, the output power is 10W, and the frequency is 10 kHz.
6. And opening the auxiliary laser device.
7. And opening the laser of the invisible cutting device.
8. And adjusting the X axis and the Y axis of the multi-axis motion platform 9, and guiding the silicon wafer to move according to a set processing track, so that a modified layer is formed in the silicon wafer.
9. After the above steps, the silicon wafer is taken off from the multi-axis motion platform 9, and the silicon wafer is sliced by using the slicing machine.
10. The cut silicon wafer was observed under a scanning electron microscope and an atomic force microscope.
Claims (9)
1. A laser cutting apparatus, comprising:
a multi-axis mobile platform;
the imaging system is used for acquiring a surface image of a workpiece to be processed on the multi-axis mobile platform;
the invisible cutting device is used for generating laser beams which are converged into the workpiece to be processed to enable the workpiece materials to be gasified and ionized to form plasma; and
one or more auxiliary laser devices for generating an auxiliary laser beam for irradiating the plasma to accelerate expansion thereof.
2. The laser cutting apparatus of claim 1, wherein the focal spot position of the auxiliary laser beam generated by the one or more auxiliary laser devices is around or coincident with the stealth scribe laser focal spot of the laser beam generated by the stealth scribe device.
3. The laser cutting apparatus of claim 2, wherein the energy density of the assist laser beam within the material is less than an ablation threshold of the work piece being machined.
4. The laser cutting device of claim 1, wherein the laser beam generated by the invisible cutting device is perpendicular to a workpiece to be machined.
5. The laser cutting device according to claim 1, wherein the invisible cutting device comprises: an ultrafast laser generating a laser beam; the laser beam expander expands the diameter of the laser beam to form a collimated laser beam; the reflector group is positioned behind the laser beam expander and reflects the laser beam to the processing workpiece; and a focusing objective lens for focusing the laser beam reflected by the reflector group.
6. The laser cutting apparatus of claim 5, wherein the imaging system comprises: an illumination light source emitting an illumination beam; a reflector that reflects the illumination beam toward the set of reflectors of the stealth cutter; and the imaging lens is used for imaging a reverse loop formed after the illumination light beam irradiates the surface of the processed workpiece on the CCD camera.
7. The laser cutting device of claim 1, wherein the auxiliary laser device comprises CO2Laser or solid state laser.
8. A laser cutting method comprising the laser cutting apparatus of any one of claims 1 to 7, the method comprising:
step 1, planning a processing track of a processing workpiece;
step 2, adjusting the Z axis of the multi-axis mobile platform to enable the surface of the processed workpiece to be imaged in an imaging system, and setting the position of the Z axis at the moment as a datum reference point when the surface of the processed workpiece is clearly imaged in the imaging system;
step 3, setting the invisible cutting laser focal spot of the laser beam generated by the invisible cutting device in the processing workpiece;
step 4, adjusting the focal spot position of the auxiliary laser beam generated by the one or more auxiliary laser devices to enable the auxiliary laser beam to be positioned around the focal spot of the invisible cutting laser or to be superposed with the focal spot of the invisible cutting laser;
step 5, adjusting an X axis and a Y axis of the multi-axis motion platform, and guiding the processed workpiece to move according to a set processing track so as to form a modified layer in the processed workpiece;
and 6, applying mechanical external force to the surface of the machined workpiece by using a wafer separator according to a preset cutting path to realize complete separation of the machined workpiece.
9. The laser cutting method according to claim 8, wherein when the workpiece is moved according to the set processing track, the focal spot position of the auxiliary laser beam is always around or coincident with the focal spot of the stealth dicing laser.
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