JP2016129203A - Wafer processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a silicon wafer processing method that can suppress a transmission light from damaging a device on a wafer surface when a pulse laser beam in the wavelength range from 1300 to 1400 nm is irradiated to form a reformed layer.SOLUTION: A wafer processing method comprises a wavelength setting step of setting the wavelength of a pulse laser beam in the range from 1300 nm to 1400 nm, a reformed layer forming step of applying the pulse laser beam from the back surface 11b of a wafer 11 to form a reformed layer in the wafer after the wavelength setting step is executed, and a parting step of applying external force to the wafer to part the reformed layer along a parting schedule line after the reformed layer formation step is executed. In the reformed layer forming step, a first pulse laser beam having relatively small energy per pulse is applied to form a first reformed layer, and following the first reformed layer, a second pulse laser beam having relatively large energy per pulse is applied to form a second reformed layer so that the second reformed layer is overlapped with the first reformed layer.SELECTED DRAWING: Figure 6

Description

  In the present invention, after a modified layer is formed inside a wafer by irradiating a pulse laser beam having a wavelength that is transmissive to the wafer, an external force is applied to the wafer, and the wafer is made into a plurality of devices starting from the modified layer. The present invention relates to a method for processing a wafer to be divided into chips.

  A silicon wafer (hereinafter, simply referred to as a wafer) formed by dividing a plurality of devices such as ICs and LSIs on a surface by dividing lines is divided into individual device chips by a processing apparatus. Chips are widely used in various electric devices such as mobile phones and personal computers.

  A dicing method using a cutting device called a dicing saw is widely used for dividing the wafer. In the dicing method, a wafer is cut by cutting a wafer into a wafer while rotating a cutting blade having a thickness of about 30 μm by solidifying abrasive grains such as diamond with a metal or a resin at a high speed of about 30000 rpm. Divide into chips.

  On the other hand, in recent years, a condensing point of a pulse laser beam having a wavelength that is transmissive to the wafer is positioned inside the wafer corresponding to the division line, and the pulse laser beam is irradiated along the division line to be irradiated to the wafer. There has been proposed a method in which a modified layer is formed inside and then an external force is applied to divide the wafer into individual device chips (see, for example, Japanese Patent No. 4402708).

  The modified layer is a region where the density, refractive index, mechanical strength and other physical properties are different from the surroundings, in addition to the melt rehardened region, refractive index changing region, dielectric breakdown region, A crack region and a region where these are mixed are also included.

  The optical absorption edge of silicon is in the vicinity of a light wavelength of 1050 nm corresponding to the band gap (1.1 eV) of silicon, and light having a shorter wavelength is absorbed by bulk silicon.

  In the conventional modified layer forming method, a Nd: YAG pulse laser doped with neodymium (Nd) that oscillates a laser with a wavelength of 1064 nm close to the optical absorption edge is generally used (for example, JP-A-2005-95952). reference).

  However, since the wavelength of 1064 nm of the Nd: YAG pulse laser is close to the optical absorption edge of silicon, a part of the laser beam is absorbed in the region sandwiching the condensing point, so that a sufficient modified layer is not formed, and the wafer is individually May not be divided into device chips.

  Therefore, when the present applicant forms a modified layer inside the wafer using, for example, a YAG pulse laser having a wavelength of 1342 to 1400 nm set in a wavelength range of 1300 to 1400 nm, absorption of the laser beam is performed in a region sandwiching the condensing point. It has been found that a good reformed layer can be formed by reducing the thickness of the wafer and that the wafer can be smoothly divided into individual device chips (see Japanese Patent Application Laid-Open No. 2006-108459).

Japanese Patent No. 4402708 JP-A-2005-95952 Japanese Patent Laid-Open No. 2006-108459

  However, if the laser beam is irradiated with the focused point of the pulse laser beam positioned inside the wafer adjacent to the modified layer formed immediately before the division line, the pulsed laser beam is formed. It has been found that a laser beam is scattered on the surface opposite to the surface irradiated with the laser beam, that is, the surface of the wafer, causing a new problem of attacking and damaging the device formed on the surface.

  When this problem was verified, fine cracks propagated from the modified layer formed immediately before to the surface side of the wafer, and the cracks refracted or reflected the transmitted light of the pulse laser beam to be irradiated next. It is inferred that they will attack.

  The present invention has been made in view of such a point, and the object of the present invention is to irradiate a silicon wafer with a pulse laser beam having a wavelength set in a range of 1300 to 1400 nm to modify the inside of the wafer. It is an object of the present invention to provide a wafer processing method capable of suppressing transmitted light from damaging a device on a wafer surface when forming a quality layer.

  According to the present invention, the holding means for holding the workpiece, and the modified layer is formed inside the workpiece by irradiating the workpiece held by the holding means with a pulse laser beam having a wavelength that is transmissive to the workpiece. A plurality of devices on the surface by a plurality of scheduled division lines by a laser processing apparatus comprising: a laser beam irradiating means for forming a laser beam; A wafer processing method for processing a wafer made of silicon formed by partitioning, a wavelength setting step for setting a wavelength of a pulse laser beam having transparency to the wafer in a range of 1300 nm to 1400 nm, and the wavelength After executing the setting step, the focusing point of the pulsed laser beam is positioned inside the wafer, and the planned splitting light is applied from the back side of the wafer. A modified layer forming step of irradiating a region corresponding to the laser beam with a pulse laser beam and relatively processing and feeding the holding unit and the laser beam irradiation unit to form a modified layer inside the wafer; A splitting step of applying an external force to the wafer after the layer forming step and splitting the wafer along the planned split line with the modified layer as a split starting point. In the modified layer forming step, The first modified layer is formed by irradiating a first pulsed laser beam having a first value that suppresses the formation of cracks, and the energy per pulse follows the first modified layer. There is provided a wafer processing method characterized by irradiating a second pulse laser beam having a second value larger than the first value to form a second modified layer on the first modified layer. .

  Preferably, the energy per pulse (first value) of the first pulse laser beam is 1.5 to 4.0 μJ, and the energy per pulse of the second pulse laser beam (second value) is 6. 5 to 10 μJ.

  According to the wafer processing method of the present invention, in the modified layer forming step, the first modified layer is formed by irradiating the first pulse laser beam having the first value at which the energy per pulse is suppressed from forming cracks. Forming, following the first modified layer, irradiating a second pulse laser beam having a second value of energy per pulse larger than the first value, and superimposing the first modified layer on the first modified layer. Since the two modified layers are formed, the first modified layer is irradiated with the second pulse laser beam having the second value having a relatively large energy per pulse with the focusing point superimposed on the first modified layer. The second pulse laser beam having a relatively large energy is induced to suppress the formation of fine cracks, and the second modified layer is formed in this state. Therefore, the pulse laser beam to be irradiated next is not affected by cracks, and the problem of damaging a device formed on the surface of the wafer can be solved.

It is a perspective view of the laser processing apparatus suitable for implementing the processing method of the wafer of this invention. It is a block diagram of a laser beam generation unit. It is a surface side perspective view of a silicon wafer. It is a perspective view which shows a mode that the outer peripheral part sticks the surface side of a silicon wafer to the dicing tape stuck to the annular frame. It is a back surface side perspective view of the silicon wafer supported by the annular frame via the dicing tape. It is a schematic diagram which shows the optical path of a laser beam. It is a perspective view explaining a modified layer formation step. It is typical sectional drawing explaining the modified layer formation step. It is a perspective view of a dividing device. It is sectional drawing which shows a division | segmentation step.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to FIG. 1, there is shown a schematic perspective view of a laser processing apparatus 2 suitable for carrying out the wafer processing method of the present invention.

  The laser processing apparatus 2 includes a first slide block 6 mounted on a stationary base 4 so as to be movable in the X-axis direction. The first slide block 6 is moved along the pair of guide rails 14 in the machining feed direction, that is, the X-axis direction, by the machining feed means 12 including the ball screw 8 and the pulse motor 10.

  A second slide block 16 is mounted on the first slide block 6 so as to be movable in the Y-axis direction. That is, the second slide block 16 is moved along the pair of guide rails 24 in the index feed direction, that is, the Y-axis direction, by the index feed means 22 constituted by the ball screw 18 and the pulse motor 20.

  A chuck table 28 is mounted on the second slide block 16 via a cylindrical support member 26. The chuck table 28 can be rotated, and can be rotated in the X-axis direction and the Y-axis direction by the processing feed means 12 and the index feed means 22. Can be moved to. The chuck table 28 is provided with a clamp 30 that clamps an annular frame that supports the wafer sucked and held by the chuck table 28.

  A column 32 is erected on the stationary base 4, and a laser beam irradiation unit 34 is attached to the column 32. The laser beam irradiation unit 34 includes a laser beam generation unit 35 shown in FIG. 2 housed in the casing 33 and a condenser 37 attached to the tip of the casing 33.

  As shown in FIG. 2, the laser beam generating unit 35 includes a laser oscillator 62 that oscillates a YAG pulse laser, a repetition frequency setting unit 64, a pulse width adjusting unit 66, and a power adjusting unit 68. In this embodiment, a YAG pulse laser oscillator that oscillates a pulse laser having a wavelength of 1342 nm is employed as the laser oscillator 62.

  An image pickup unit 39 that detects a processing region to be laser processed in alignment with the condenser 37 and the X-axis direction is disposed at the tip of the casing 35. The imaging unit 39 includes an imaging element such as a normal CCD that images the processing area of the semiconductor wafer 11 with visible light.

  The imaging unit 39 further includes an infrared irradiation unit that irradiates the workpiece with infrared rays, an optical system that captures the infrared rays irradiated by the infrared irradiation unit, and an infrared ray that outputs an electrical signal corresponding to the infrared rays captured by the optical system. An infrared imaging means including an infrared imaging element such as a CCD is included, and the captured image signal is transmitted to a controller (control means) 40.

  The controller 40 includes a central processing unit (CPU) 42 that performs arithmetic processing according to a control program, a read-only memory (ROM) 44 that stores a control program, and a random read / write that stores arithmetic results. An access memory (RAM) 46, a counter 48, an input interface 50, and an output interface 52 are provided.

  A machining feed amount detection unit 56 includes a linear scale 54 disposed along the guide rail 14 and a reading head (not shown) disposed on the first slide block 6. These detection signals are input to the input interface 50 of the controller 40.

  Reference numeral 60 denotes an index feed amount detection unit composed of a linear scale 58 disposed along the guide rail 24 and a read head (not shown) disposed on the second slide block 16. The detection signal is input to the input interface 50 of the controller 40.

  An image signal captured by the imaging unit 39 is also input to the input interface 50 of the controller 40. On the other hand, a control signal is output from the output interface 52 of the controller 40 to the pulse motor 10, the pulse motor 20, the laser beam generation unit 35, and the like.

  Referring to FIG. 3, there is shown a front side perspective view of a semiconductor wafer 11 to be processed by the processing method of the present invention. A semiconductor wafer 11 shown in FIG. 3 is composed of, for example, a silicon wafer having a thickness of 100 μm.

  The semiconductor wafer 11 has a plurality of first division planned lines (streets) 13a extending in the first direction on the surface 11a and a plurality of second division planned extending in a second direction orthogonal to the first direction. A line 13b is formed, and a device 15 such as an IC or LSI is formed in each region partitioned by the first scheduled division line 13a and the second scheduled division line 13b.

  In the wafer processing method according to the embodiment of the present invention, a semiconductor wafer (hereinafter abbreviated as “wafer”) 11 has a surface 11a attached to a dicing tape T whose outer periphery is attached to an annular frame F as shown in FIG. Then, as shown in FIG. 5, the processing is performed with the back surface 11b of the wafer 11 exposed.

  In the wafer processing method of the present invention, first, the wavelength of a pulsed laser beam having transparency to the silicon wafer 11 is set in the range of 1300 nm to 1400 nm (wavelength setting step). In this embodiment, a YAG laser oscillator that oscillates a pulse laser having a wavelength of 1342 nm is employed as the laser oscillator 62 of the laser beam generation unit 35 shown in FIG.

  Next, the wafer 11 is sucked and held by the chuck table 28 of the laser processing apparatus 2 via the dicing tape T, and the back surface 11b of the wafer 11 is exposed. Then, the wafer 11 is imaged from the back surface 11b side by the infrared imaging element of the imaging unit 39, and alignment is performed so that the region corresponding to the first scheduled division line 13a is aligned with the condenser 37 in the X-axis direction. For this alignment, well-known image processing such as pattern matching is used.

  After the alignment of the first scheduled division line 13a, after the chuck table 28 is rotated 90 degrees, the same alignment is performed for the second scheduled division line 13b extending in the direction orthogonal to the first scheduled division line 13a. To implement.

  After performing the alignment step, as shown in FIG. 7, the condensing point of the pulsed laser beam having a wavelength of 1342 nm is positioned inside the wafer corresponding to the first scheduled division line 13a by the condenser 37, and the pulsed laser beam is moved to the wafer 11 Irradiation is performed from the back surface 11b side and the chuck table 28 is processed and fed in the direction of the arrow X1 to perform a modified layer forming step for forming the modified layer 19 inside the wafer 11.

  As shown in FIG. 6, the pulse laser beam LB emitted from the laser beam generating unit 35 is usually a P-polarized pulse laser beam. The pulse laser beam LB is attenuated by a predetermined amount by the attenuator 43 of the optical system 41, and then the polarization plane of the pulse laser beam LB is rotated by a predetermined angle by the half-wave plate 45 and input to the first polarization beam splitter 47.

  The P-polarized component of the pulse laser beam LB input to the first polarization beam splitter 47 passes through the first polarization beam splitter 47 as the first pulse laser beam LB1 and is emitted to the first optical path 49.

  On the other hand, the S-polarized component of the pulsed laser beam LB incident on the first polarizing beam splitter 47 is reflected by the first polarizing beam splitter 47 and emitted to the second optical path 51 as the second pulsed laser beam LB2.

  Here, in the attenuator 43, the average output of the pulse laser beam LB is attenuated to be 0.8 to 1.4 W, and the half-wave plate 45 is rotated by a predetermined angle, whereby the first polarized light is processed under the processing conditions described later. The energy per pulse of the first pulse laser beam LB1 after passing through the beam splitter 47 becomes 1.5 to 4.0 μJ, and the energy per pulse of the second pulse laser beam LB2 reflected by the first polarization beam splitter 43. Is adjusted to 6.5 to 10 μJ.

  The first pulse laser beam LB1 emitted to the first optical path 49 is reflected by the mirror 53 at a right angle, and then its polarization plane is rotated by 90 ° by the half-wave plate 55, so that the S-polarized first pulse laser beam. Converted to LB1.

  The S-polarized first pulse laser beam LB1 is reflected by the mirror 57 at a right angle, then enters the second polarization beam splitter 61, and is reflected by the polarization separation film 61a of the second polarization beam splitter 61 in the vertical direction.

  On the other hand, the S-polarized second pulse laser beam LB2 reflected by the first polarization beam splitter 47 to the second optical path 51 is rotated by 90 ° by the half-wave plate 59 so that the polarization plane is rotated by 90 °. After being converted to the pulsed laser beam LB2, it is incident on the second polarization beam splitter 61 and passes through the polarization separation film 61a of the second polarization beam splitter 61.

  The first pulse laser beam LB1 reflected by the second polarizing beam splitter 61 is condensed by the condenser lens 63 at the first condensing point P1 inside the wafer 11 and transmitted through the second polarizing beam splitter 61. The beam LB2 is condensed at the second condensing point P2 inside the wafer 11 by the condensing lens 63.

  In the modified layer forming step of the present invention, as shown in FIG. 8, since it is necessary to form the second modified layer 19a over the first modified layer 19, the first condensing point P1 and the second concentrated layer are formed. The distance between the light spot P2 needs to be set to an integral multiple of the distance between the adjacent modified layers 19 (19a).

  In the present embodiment, the processing conditions of the modified layer forming step, which will be described later, are a feed rate of 300 mm / s and a repetition frequency of 100 kHz. Therefore, the distance between the first condensing point P1 and the second condensing point P2. Was adjusted to 6 μm, which is twice the distance between adjacent modified layers 19 (19a).

  Adjustment of the distance between the 1st condensing point P1 and the 2nd condensing point P2 adjusts the position of the 2nd polarizing beam splitter 61 to an up-down direction with respect to the 1st pulse laser beam LB1 reflected by the mirror 57 at right angle. This is easily achieved by moving.

  As shown in FIG. 8, the first condensing point P1 of the first pulse laser beam LB1 and the second condensing point P2 of the second pulse laser beam LB2 branched into two by the optical system 41 of FIG. The optical lens 63 is positioned inside the wafer corresponding to the first division line 13a, the first pulse laser beam LB1 and the second pulse laser beam LB2 are irradiated from the back surface 11b side of the wafer 11, and the chuck table 28 is moved to the arrow. By processing and feeding in the X1 direction, the first modified layer 19 is formed with the first pulse laser beam LB1, and the second modified layer 19a is overlaid on the first modified layer 19 with the second pulse laser beam LB2. Form (modified layer forming step).

  In the modified layer forming step of the present embodiment, the first modified layer 19 is first formed with the first pulse laser beam LB1 having relatively small energy per pulse, and the first modified layer 19 is followed by 1 The second modified layer 19a is formed inside the wafer by irradiating the second pulse laser beam LB2 having a relatively large energy per pulse and overlapping the first modified layer 19.

  Since the second pulse laser beam LB2 is irradiated with the second focused laser beam P1 of the second pulse laser beam LB2 superimposed on the first modified layer 19, the second pulse having a relatively large energy is applied to the first modified layer 19. The second modified layer 19a is formed on the first modified layer 19 in a state where the laser beam LB2 is guided and formation of fine cracks is suppressed.

  Therefore, the pulse laser beam to be irradiated next is not affected by cracks, and the device 15 formed on the surface 11a of the wafer 11 is prevented from being damaged.

  While indexing and feeding the chuck table 28 in the Y-axis direction, a second modified layer 19a is formed on the first modified layer 19 inside the wafer 11 corresponding to all the first division planned lines 13a.

  Next, after the chuck table 28 is rotated by 90 °, the second modified layer 19a is overlaid on the first modified layer 19 along all the second scheduled division lines 13b orthogonal to the first scheduled division line 13a. Form.

  The processing conditions of the modified layer forming step of this embodiment are set as follows, for example.

Light source: YAG pulse laser Wavelength: 1342nm
Average output: 0.8-1.4W
Repetition frequency: 100 kHz
Spot diameter: φ3.0μm
Energy per pulse of the first pulse laser beam: 1.5 to 4.0 μJ
Energy per pulse of the second pulse laser beam: 6.5 to 10 μJ
Feeding speed: 300mm / s

  In the embodiment shown in FIG. 6, the power of the pulse laser beam LB emitted from the laser beam generation unit 35 is attenuated by the attenuator 43. However, instead of the attenuator 43, another output adjuster is adopted. Also good.

  In this case, the power of the first pulse laser beam LB1 and the second pulse laser beam LB2 is adjusted within a desired range by appropriately adjusting the power adjusting means 68 and the output adjuster of the laser beam generating unit 35. .

  After the modified layer forming step, the dividing step shown in FIG. 9 is used to apply an external force to the wafer 11 and divide the wafer 11 into individual device chips 21. 9 includes a frame holding unit 82 that holds the annular frame F, and a tape expansion unit 84 that extends the dicing tape T attached to the annular frame F held by the frame holding unit 82. Yes.

  The frame holding means 82 includes an annular frame holding member 86 and a plurality of clamps 88 as fixing means arranged on the outer periphery of the frame holding member 86. An upper surface of the frame holding member 86 forms a mounting surface 86a on which the annular frame F is mounted, and the annular frame F is mounted on the mounting surface 86a.

  The annular frame F placed on the placement surface 86 a is fixed to the frame holding means 86 by a clamp 88. The frame holding means 82 configured as described above is supported by the tape extending means 84 so as to be movable in the vertical direction.

  The tape expansion means 84 includes an expansion drum 90 disposed inside the annular frame holding means 86. The upper end of the expansion drum 90 is closed with a lid 92. The expansion drum 90 has an inner diameter smaller than the inner diameter of the annular frame F and larger than the outer diameter of the wafer 11 attached to the dicing tape T attached to the annular frame F.

  The expansion drum 90 has a support flange 94 integrally formed at the lower end thereof. The tape expanding means 84 further includes driving means 96 for moving the annular frame holding member 86 in the vertical direction. The driving means 96 is composed of a plurality of air cylinders 98 disposed on a support flange 94, and the piston rod 100 is connected to the lower surface of the frame holding member 86.

  The driving means 96 composed of a plurality of air cylinders 98 includes an annular frame holding member 86, a reference position where the mounting surface 86a is substantially the same height as the surface of the lid 92 which is the upper end of the expansion drum 90, and an expansion. It moves up and down between the extended position below the upper end of the drum 90 by a predetermined amount.

  The dividing step of the wafer 11 performed using the dividing apparatus 80 configured as described above will be described with reference to FIG. As shown in FIG. 10A, the annular frame F, in which the wafer 11 is supported via the dicing tape T, is placed on the placement surface 86 a of the frame holding member 86, and the frame holding member 86 is clamped by the clamp 88. Fix it. At this time, the frame holding member 86 is positioned at a reference position where the mounting surface 86a is substantially flush with the upper end of the expansion drum 90.

  Next, the air cylinder 98 is driven to lower the frame holding member 86 to the extended position shown in FIG. As a result, the annular frame F fixed on the mounting surface 86a of the frame holding member 86 is also lowered, so that the dicing tape T attached to the annular frame F abuts on the upper end edge of the expansion drum 90 and mainly has a radius. Expanded in the direction.

  As a result, a tensile force acts radially on the wafer 11 adhered to the dicing tape T. When a tensile force is applied to the wafer 11 in a radial manner in this way, the second modified layer 19a formed along the first and second scheduled division lines 13a and 13b serves as the division starting point, and the wafer 11 becomes the first, Cleaving along the second scheduled dividing lines 13a and 13b and dividing into individual device chips 21.

2 Laser processing apparatus 11 Silicon wafer 13a First scheduled division line 13b Second scheduled division line 15 Device 19 First modified layer 19a Second modified layer 21 Device chip 28 Chuck table 34 Laser beam irradiation unit 35 Laser beam generation Unit 37 Condenser 39 Imaging unit 41 Optical system 43 Attenuator 62 Laser oscillator 66 Pulse width adjusting means 72 Condensing lens 80 Dividing device T Dicing tape F Annular frame

Claims (2)

A holding means for holding a workpiece, and a laser beam for forming a modified layer inside the workpiece by irradiating a pulse laser beam having a wavelength that is transmissive to the workpiece held by the holding means A plurality of devices are defined on the surface by a plurality of division lines on a surface by a laser processing apparatus including an irradiation unit, and a processing feed unit that relatively processes and feeds the holding unit and the laser beam irradiation unit. A wafer processing method for processing a wafer made of pure silicon,
A wavelength setting step for setting the wavelength of the pulse laser beam having transparency to the wafer to a range of 1300 nm to 1400 nm;
After carrying out the wavelength setting step, the focusing point of the pulse laser beam is positioned inside the wafer, and the pulse laser beam is irradiated from the back surface of the wafer to the region corresponding to the division line, and the holding means and the laser beam irradiation means And a modified layer forming step for forming a modified layer in the wafer by relatively processing and feeding
A splitting step for applying an external force to the wafer after the reformed layer forming step and dividing the wafer along the planned split line with the reformed layer as a split starting point; and
In the modified layer forming step, the first modified layer is formed by irradiating the first pulsed laser beam having a first value at which energy per pulse is suppressed to form cracks, and the first modified layer is formed. To form a second modified layer by irradiating a second pulse laser beam having a second value whose energy per pulse is larger than the first value and overlapping the first modified layer. A characteristic wafer processing method.   2. The wafer processing method according to claim 1, wherein the first value is 1.5 to 4.0 μJ, and the second value is 6.5 to 10 μJ.