CN111029342B - 显示面板及其制备方法、显示装置 - Google Patents

显示面板及其制备方法、显示装置 Download PDF

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CN111029342B
CN111029342B CN201911080068.4A CN201911080068A CN111029342B CN 111029342 B CN111029342 B CN 111029342B CN 201911080068 A CN201911080068 A CN 201911080068A CN 111029342 B CN111029342 B CN 111029342B
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CN111029342A (zh
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谢华飞
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Abstract

本发明提供了一种显示面板及其制备方法、显示装置。所述显示面板包括基层、栅极层、绝缘层以及有缘层。其中，所述栅极层设于所述基层上，其具有第一栅极层和第二栅极层，所述第二栅极层设于所述第一栅极层的表面。所述绝缘层覆于所述栅极层和所述基层上。所述有源层设于所述绝缘层远离所述栅极层的一表面上，所述有源层具有第一层段和连接于所述第一层段的第二层段，所述第二层段的表面高于所述第一层段的表面。

Description

显示面板及其制备方法、显示装置
技术领域
本发明涉及显示器件领域，特别是一种显示面板及其制备方法、显示装置。
背景技术
金属氧化物薄膜晶体管(Metal oxide thin film transistor,MO-TFT)，尤其是铟镓锌氧化物(IGZO)TFT，由于具有良好的均一性、高迁移率、低漏电流、适合大面积工业制备等优点，广泛的应用到了平板显示行业中。
现有MO-TFT通常以BCE(Back Channel Etching，背沟道刻蚀)结构、ESL(EtchStop Layer，蚀刻阻挡层)结构和Top-Gate结构为主。其中，BCE结构因源漏极金属刻蚀酸液会对有源层进行刻蚀造成损伤而致使TFT器件性能较差，而Top-gate结构因结构和工艺复杂，生产成本较高等原因未能应用于LCD显示中。ESL结构因刻蚀阻挡层可有效的保护沟道免受金属刻蚀液影响，同时也没有top-gate的结构复杂，因而器件性能和工艺成熟度都较高，但也存在器件难以做小，影响LCD穿透率的缺点。
发明内容
本发明的目的是提供一种显示面板及其制备方法、显示装置，以解决现有技术中ESL型结构的金属氧化物薄膜晶体管器件结构复杂，影响显示面板穿透率等问题。
为实现上述目的，本发明提供一种显示面板，其包括基层、栅极层、绝缘层以及有缘层。其中，所述栅极层设于所述基层上，其具有第一栅极层和第二栅极层，所述第二栅极层设于所述第一栅极层的表面。所述绝缘层覆于所述第一栅极层、所述第二栅极层和所述基层上。所述有源层设于所述绝缘层远离所述栅极层的一表面上，所述有源层具有第一层段和连接于所述第一层段的第二层段，所述第二层段的表面高于所述第一层段的表面。
进一步地，所述显示面板还包括蚀刻阻挡层、源极层以及钝化层。所述蚀刻阻挡层设于所述绝缘层上，并覆盖部分有源层。所述源极层设于所述绝缘层上，并覆盖另一部分有源层上，同时对应于所述第二栅极层。所述钝化层覆于所述源极层和所述蚀刻阻挡层上。
进一步地，所述显示面板还包括像素电极层，所述像素电极层设于所述钝化层上。在所述钝化层和所述蚀刻阻挡层中还具有一接触孔，所述接触孔贯穿所述钝化层和所述蚀刻阻挡层至所述有源层的一表面上，并对应设于所述有源层远离所述源极层的一端，所述像素电极层通过所述接触孔与所述有源层连接。
进一步地，所述第二栅极层的面积小于所述第一栅极的面积。
进一步地，所述有源层的材料包括多晶硅、金属氧化物。
进一步地，所述金属氧化物半导体包括铟镓锌氧化物、氧化锌、锌钛氧化物、铟镓锌钛氧化物中的一种或多种。
本发明中还提供一种显示面板的制备方法，其包括以下步骤：
步骤S10)提供一基层。
步骤S20)在所述基层上形成栅极层。
步骤S30)在所述栅极层和所述基层上形成绝缘层。
步骤S40)在所述绝缘层上形成有源层。
其中，所述形成栅极层步骤中包括：在所述基层上形成第一栅极层，在所述第一栅极层上形成第二栅极层。
进一步地，所述显示面板制备方法中还包括以下步骤：
步骤S50)在所述有源层和所述绝缘层上形成蚀刻阻挡层。
步骤S60)在所述绝缘层和所述有源层上形成源极层。
步骤S70)在所述绝缘层、所述源极层和所述蚀刻阻挡层上形成钝化层。
进一步地，所述显示面板制备方法中还包括以下步骤：
步骤S80)在所述钝化层上形成像素电极层：在所述钝化层和所述蚀刻阻挡层内形成接触孔，在所述接触孔内以及所述钝化层上沉积导电材料形成所述像素电极层。
本发明中还提供一种显示装置，所述显示装置中包括如上所述的显示面板。
本发明的优点是：本发明的一种显示面板，其通过垫高栅极层，使有源层在竖直方向有一个落差，通过高度落差可控制有源层沟道的长度，减小薄膜晶体管显示面板中的沟道长度和面积，提高所述显示装置的开口率。同时，其将像素电极直接与有源层接触，大大简化了所述显示面板的结构。
附图说明
图1为本发明实施例中显示面板的层状结构示意图；
图2为本发明实施例中制备方法的流程示意图；
图3为本发明实施例中步骤S10中的层状结构示意图；
图4为本发明实施例中步骤S20中的层状结构示意图；
图5为本发明实施例中步骤S20中的层状结构示意图；
图6为本发明实施例中步骤S30中的层状结构示意图；
图7为本发明实施例中步骤S40中的层状结构示意图；
图8为本发明实施例中步骤S50中的层状结构示意图；
图9为本发明实施例中步骤S60中的层状结构示意图；
图10为本发明实施例中步骤S70中的层状结构示意图；
图11为本发明实施例中步骤S80中的层状结构示意图。
图中部件表示如下：
显示面板100；
基层1； 栅极层2；
第一栅极层21； 第二栅极层22；
绝缘层3； 有源层4；
第一层段41； 第二层段42；
蚀刻阻挡层5； 源极层6；
钝化层7； 像素电极层8；
接触孔9。
具体实施方式
以下参考说明书附图介绍本发明的优选实施例，证明本发明可以实施，所述发明实施例可以向本领域中的技术人员完整介绍本发明，使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的发明实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰，附图中有些地方适当夸大了部件的厚度。
此外，以下各发明实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定发明实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”等仅用于描述目的，而不能理解为指示或暗示相对重要性。
当某些部件被描述为“在”另一部件“上”时，所述部件可以直接置于所述另一部件上；也可以存在一中间部件，所述部件置于所述中间部件上，且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时，二者可以理解为直接“安装”或“连接”，或者一个部件通过一中间部件间接“安装至”、或“连接至”另一个部件。
本发明实施例中提供了一种显示面板100，如图1所示，所述显示面板100中包括一基层1、一栅极层2、一绝缘层3、一有源层4、一蚀刻阻挡层5、一源极层6以及一钝化层7。
所述基层1为绝缘基板，其材料可以为玻璃、石英等绝缘材料，所述基层1用于保护所述显示面板100的整体结构。
所述栅极层2设于所述基层1上。所述栅极层2中具有第一栅极层21以及第二栅极层22，所述第一栅极层21设于所述基层1上，所述第二栅极层22设于所述第一栅极层21远离所述基层1的一表面上，所述第二栅极的面积小于所述第一栅极层21的面积，所述第一栅极层21和所述第二栅极层22促使所述栅极层2形成阶梯状结构。
所述绝缘层3覆于所述栅极层2和所述基层1上，所述第一绝缘层3用于保护所述栅极层2，并将所述栅极层2和所述有源层4之间绝缘处理，防止出现短路现象。
所述有源层4设于所述绝缘层3远离所述栅极层2的一表面上，并与所述栅极层2相互对应。由于所述栅极层2具有阶梯状结构，使覆于所述栅极层2上的绝缘层3也具有阶梯状结构，促使设于所述绝缘层3并与所述栅极层2对应的有源层4形成第一层段41和与所述第一层段41连接的第二层段42，其中所述第二层段42的表面高于所述第一层段41的表面，使所述有源层4在竖直方向上具有落差，从而减小所述显示面板100中薄膜晶体管两端之间的沟道的直线距离。
所述蚀刻阻挡层5设于所述绝缘层3和所述有源层4的一端上，并且其覆于所述有源层4靠近其第一层段41的一端上。所述蚀刻阻挡层5在绝缘并保护所述有源层4，并且其稳定性高，可以防止所述有源层4被金属刻蚀液影响，能够有效提高所述显示面板100的稳定性和阈值电压。
所述源极层6设于所述绝缘层3和所述有源层4的另一端上，并且其覆于所述有源层4靠近其第二层段42的一端上，与所述有源层4的第二层段42接触连接。所源极层6和所述蚀刻阻挡层5将所述有源层4的裸露面完全覆盖保护。
所述钝化层7覆于所述源极层6和所述蚀刻阻挡层5远离所述有源层4的一表面上，其用于保护所述源极层6，并将所述源极层6钝化绝缘处理。
所述显示面板100中还具有像素电极层8，所述像素电极层8设于所述钝化层7远离所述源极层6的一表面上，在所述蚀刻阻挡层5和所述钝化层7中具有一接触孔9，所述接触孔9贯穿所述钝化层7和所述蚀刻阻挡层5至所述所述有源层4的第一层段41的表面上，所述像素电极层8通过所述接触孔9与所述有源层4第一层段41的一端连接。
所述绝缘层3、所述蚀刻阻挡层5和所述钝化层7可以采用硅氧化物、硅氮化物等无机材料中的一种或多种，其均具有阻隔水氧的作用。所述栅极层2和所述源极层6均可采用含有铜、钛、钼、铝等导电性能优异的金属或合金。所述像素电极层8的材料可以采用氧化铟锡(ITO)。所述有源层4的材料为多晶硅或氧化物半导体，所述氧化物半导体可以为铟镓锌氧化物(IGZO)、氧化锌(ZnO)、铟镓锌锡氧化物(IGZTO)、锌锡氧化物(ZTO)、等金属氧化物材料。
所述显示面板100通过对所述栅极层2施加电压，从而产生电场，所述电场会促使所述有源层4的表面产生感应电荷，改变导电沟道的宽度，从而达到控制所述源极层6电流的目的，所述像素电极层8与所述有源层4直接接触连接，所述有源层4通过直接控制所述像素电极层8的电流，从而控制与所述像素电极层8连接的发光器件的明暗，实现画面显示。
本发明实施例中还提供一种如上所述的显示面板100的制备方方法，其制备流程如图2所述，其包括以下制备步骤：
步骤S10)提供一基层1：如图3所示，提供一基板，所述基层1为绝缘基板，其可以为玻璃基板、石英基板等绝缘基板。
步骤S20)在所述基层1上形成栅极层2：
在所述基层1上形成第一栅极层21：如图4所示，在所述基层1上通过物理气相沉积法沉积第一金属膜层，然后通过光刻工艺将所述第一金属膜层图案化，形成所述第一栅极层21。
在所述第一栅极层21上形成第二栅极层22：如图5所示，在所述第一栅极层21上和所述基层1上通过物理气相沉积法沉积第二金属膜层，并通过光刻工艺将所述第二金属膜层图案化，形成所述第二栅极层22。
其中，所述第二栅极层22的面积小于所述第一栅极层21的面积。
步骤S30)在所述栅极层2和所述基层1上形成绝缘层3：如图6所示，在所述栅极层2和所述基层1上通过化学气相沉积法沉积一层无机材料，形成所述绝缘层3。
步骤S40)在所述绝缘层3上形成有源层4：如图7所示，在所述绝缘层3远离所述栅极层2的一表面上沉积一层金属氧化物材料，然后通过蚀刻工艺将所述金属氧化物材料图案化，形成所述有源层4。
步骤S50)在所述有源层4和所述绝缘层3上形成蚀刻阻挡层5：如图8所示，在所述有源层4和所述绝缘层3上通过化学气相沉积法沉积一层无机材料，通过光刻工艺将其图案化，形成所述蚀刻阻挡层5。
步骤S60)在所述绝缘层3和所述有源层4上形成源极层6：如图9所示，在所述绝缘层3、所述有源层4以及所述蚀刻阻挡层5上通过物理气相沉积法沉积一第三金属膜层，并通过光刻工艺将所述金属膜层图案化，形成所述源极层6。
步骤S70)在所述绝缘层3、所述源极层6和所述蚀刻阻挡层5上形成钝化层7：如图10所示，在所述绝缘层3、所述源极层6和所述蚀刻阻挡层5上通过化学气相沉积法沉积一层无机材料，形成所述钝化层7。
步骤S80)在所述钝化层7上形成像素电极层8：如图11所示，通过干刻工艺在所述钝化层7和所述蚀刻阻挡层5内蚀刻出一接触孔9，所述接触孔9从所述钝化层7贯穿所述蚀刻阻挡层5至所述有源层4的表面。在所述钝化层7上通过物理气相沉积法沉积一氧化铟锡材料层，并所述氧化铟锡材料填充所述接触孔9，使其与有源层4接触连接。将所述氧化铟锡材料层通过光刻工艺图案化，形成如图1所示的像素电极层8。
本发明实施例中还提供一种显示装置，其包括以上所述制备方法所制备的显示面板100。所述显示装置具有可以为手机、平板电脑、笔记本电脑等任何具有显示功能的产品或者部件。
本发明实施例中所述提供的一种显示面板100，其设置第一栅极层21以及第二栅极层22，将所述栅极层2垫高，形成阶梯状结构，使有设于所述栅极层2上方的有源层4在竖直方向有一个高度落差，通过此高度落差可控制有源层4沟道的长度，减小所述显示面板100中薄膜晶体管的沟道长度和面积，提高所述显示装置的开口率。同时，其将像素电极层8直接与有源层4接触，大大简化了所述显示面板100的结构。
虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。

Claims (5)

1.一种显示面板，其特征在于，包括：
基层；
栅极层，设于所述基层上，所述栅极层具有第一栅极层和第二栅极层，所述第二栅极层设于所述第一栅极层的表面，所述第二栅极层的面积小于所述第一栅极的面积，所述第一栅极层和所述第二栅极层形成阶梯状结构；
绝缘层，覆于所述第一栅极层、所述第二栅极层和所述基层上；
有源层，设于所述绝缘层远离所述栅极层的一表面上，所述有源层具有第一层段和连接于所述第一层段的第二层段，所述第二层段的表面高于所述第一层段的表面，所述第一层段和所述第二层段形成阶梯状结构；所述第一栅极层在所述基层上的正投影覆盖所述第二层段在所述基层上的正投影，且所述第一栅极层在所述基层上的正投影与所述第一层段在所述基层上的正投影部分重叠；所述第二栅极层在所述基层上的正投影与所述第二层段在所述基层上的正投影部分重叠；
蚀刻阻挡层，设于所述绝缘层上，并覆盖部分有源层；所述蚀刻阻挡层在所述基层上的正投影覆盖所述第一层段在所述基层上的正投影，且所述蚀刻阻挡层在所述基层上的正投影与所述第二层段在所述基层上的正投影部分重叠；
源极层，设于所述绝缘层上且位于所述第二层段远离所述第一层段的一侧，所述源极层部分覆盖所述第二层段和所述蚀刻阻挡层，所述源极层与所述第二栅极层对应；
钝化层，覆于所述源极层和所述蚀刻阻挡层上，所述钝化层对应所述第一层段的部分远离所述基层一侧的表面齐平；
像素电极层，设于所述钝化层对应所述第一层段的部分上；
接触孔，所述接触孔贯穿所述钝化层和所述蚀刻阻挡层至所述有源层的所述第一层段的表面上，并对应设于所述有源层远离所述源极层的一端，所述像素电极层通过所述接触孔与所述有源层的所述第一层段的一端连接。
2.如权利要求1所述的显示面板，其特征在于，所述有源层的材料包括多晶硅、金属氧化物。
3.如权利要求2所述的显示面板，其特征在于，所述金属氧化物包括铟镓锌氧化物、氧化锌、锌钛氧化物、铟镓锌钛氧化物中的一种或多种。
4.一种显示面板的制备方法，其特征在于，包括以下步骤：
提供一基层；
在所述基层上形成第一栅极层，在所述第一栅极层上形成第二栅极层，所述第二栅极层的面积小于所述第一栅极的面积，所述第一栅极层和所述第二栅极层组合形成具有阶梯状结构的栅极层；
在所述栅极层和所述基层上形成绝缘层；
在所述绝缘层上形成有源层，所述有源层具有第一层段和连接于所述第一层段的第二层段，所述第二层段的表面高于所述第一层段的表面，所述第一层段和所述第二层段形成阶梯状结构的所述有源层；所述第一栅极层在所述基层上的正投影覆盖所述第二层段在所述基层上的正投影，且所述第一栅极层在所述基层上的正投影与所述第一层段在所述基层上的正投影部分重叠；所述第二栅极层在所述基层上的正投影与所述第二层段在所述基层上的正投影部分重叠；
在所述有源层和所述绝缘层上形成蚀刻阻挡层；所述蚀刻阻挡层在所述基层上的正投影覆盖所述第一层段在所述基层上的正投影，且所述蚀刻阻挡层在所述基层上的正投影与所述第二层段在所述基层上的正投影部分重叠；
在所述绝缘层和所述有源层上形成源极层，所述源极层位于所述第二层段远离所述第一层段的一侧，所述源极层部分覆盖所述第二层段和所述蚀刻阻挡层，所述源极层与所述第二栅极层对应；
在所述绝缘层、所述源极层和所述蚀刻阻挡层上形成钝化层，所述钝化层对应所述第一层段的部分远离所述基层一侧的表面齐平；
在所述钝化层对应所述第一层段的部分上形成像素电极层：在所述钝化层和所述蚀刻阻挡层与所述第一层段对应的位置形成接触孔，在所述接触孔内以及所述钝化层上沉积导电材料形成所述像素电极层。
5.一种显示装置，其特征在于，包括如权利要求1-3中任意一项所述的显示面板。
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