CN110998848A - 一种光阻剥离液的隔离结构、tft阵列及其制备方法 - Google Patents

一种光阻剥离液的隔离结构、tft阵列及其制备方法 Download PDF

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CN110998848A
CN110998848A CN201980002741.4A CN201980002741A CN110998848A CN 110998848 A CN110998848 A CN 110998848A CN 201980002741 A CN201980002741 A CN 201980002741A CN 110998848 A CN110998848 A CN 110998848A
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李刘中
林子平
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
Chongqing Konka Photoelectric Technology Research Institute Co Ltd
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Abstract

本发明公开了一种光阻剥离液的隔离结构、TFT阵列及其制备方法，所述隔离结构包括：保护层、设置在所述保护层上的硬化层；所述硬化层采用气体进行等离子轰击所述保护层而成，并用于隔离所述光阻剥离液。通过在有机保护层等保护层表面形成一层硬化层，硬化层可以防止后续工序中的化学试剂，如光阻剥离液，进入到保护层中，从而达到将光阻剥离液隔离在保护层外的目的，保护了保护层。

Description

一种光阻剥离液的隔离结构、TFT阵列及其制备方法
技术领域
本发明涉及薄膜晶体管阵列技术领域，尤其涉及的是一种光阻剥离液的隔离结构、TFT阵列及其制备方法。
背景技术
现有技术中，如图1所示，制备薄膜晶体管阵列(TFT array matrix)时，在玻璃基板1上依次制备电极2、有机平坦层3和铟锡氧化物导体透明导电膜(简称ITO)层后，进行光刻过程后，需要采用光阻剥离液去除光阻5(具体为感光性光阻)和电极开口区(即曝光显影后打开的区域)的有机物残留，而ITO层4并不是完全覆盖有机平坦层的，光阻剥离液从没有覆盖ITO层4处进入有机平坦层中而使有机平坦层膨胀，肿胀处的凸起21会使顶起ITO层4(如图2所示)，导致ITO层4脱落。一旦ITO层4与有机平坦层3之间出现缝隙，则光阻剥离液从裂缝处更容易地进入到有机平坦层中。
因此，现有技术还有待于改进和发展。
发明内容
本发明要解决的技术问题在于，针对现有技术的上述缺陷，提供一种光阻剥离液的隔离结构、TFT阵列及其制备方法，旨在解决现有技术中光阻剥离液的渗入所导致有机平坦层的膨胀的问题。
本发明解决技术问题所采用的技术方案如下：
一种光阻剥离液的隔离结构，其中，包括：保护层、设置在所述保护层上的硬化层；所述硬化层采用气体进行等离子轰击所述保护层而成，并用于隔离所述光阻剥离液。
所述的光阻剥离液的隔离结构，其中，所述气体包括：Ar、N2、BCl3中的一种或多种。
所述的光阻剥离液的隔离结构，其中，所述保护层为有机平坦层。
所述的光阻剥离液的隔离结构，其中，所述隔离结构还包括：设置在所述有机平坦层下的电极。
所述的光阻剥离液的隔离结构，其中，所述隔离结构还包括：设置在所述硬化层上的ITO层和设置在所述ITO层上的光阻层。
任意一项所述的光阻剥离液的隔离结构，其中，所述等离子轰击的参数为：温度为20-30℃；压力为10-30mT；轰击时间为10-20s；功率密度为2000～3000w/cm2。
任意一项所述的光阻剥离液的隔离结构，其中，所述光阻剥离液包括二甲基亚砜和乙醇胺。
一种TFT阵列，其中，包括：如上述任意一项所述的光阻剥离液的隔离结构。
一种光阻剥离液的隔离结构的制备方法，其中，所述隔离结构的制备方法包括如下步骤：
提供保护层；
在采用气体进行等离子轰击所述保护层，并在所述隔离层上形成硬化层得到光阻剥离液的隔离结构；其中，所述硬化层用于隔离所述光阻剥离液。
所述的光阻剥离液的隔离结构的制备方法，其中，所述气体包括：Ar、N2、BCl3中的一种或多种。
所述的光阻剥离液的隔离结构的制备方法，其中，所述保护层为有机平坦层。
所述的光阻剥离液的隔离结构的制备方法，其中，所述等离子轰击的参数为：温度为20-30℃；压力为10-30mT；轰击时间为10-20s，功率密度为2000～3000w/cm2。
所述的光阻剥离液的隔离结构的制备方法，其中，所述光阻剥离液为二甲基亚砜和乙醇胺。
一种TFT阵列的制备方法，其中，所述TFT阵列的制备方法包括如下步骤：
提供基板；
在基板上制备电极；
在电极上制备保护层；其中，所述保护层为有机平坦层；
采用如上述任意一项光阻剥离液的隔离结构的制备方法在有机平坦层上制备硬化层。
所述的TFT阵列的制备方法，其中，所述TFT阵列的制备方法还包括如下步骤：
在硬化层上制备ITO层；
在ITO层上制备光阻层并进行光刻处理；
采用光阻剥离液对光阻层进行剥离处理。
有益效果：通过在有机平坦层等保护层表面形成一层硬化层，硬化层可以防止后续工序中的化学试剂，如光阻剥离液，进入到保护层中，从而达到将光阻剥离液隔离在保护层外的目的，保护了保护层。
附图说明
图1是现有技术中TFT阵列制备的示意图。
图2是现有技术中ITO层脱落的示意图。
图3是本发明中保护层的结构示意图。
图4是本发明中保护层和硬化层的结构示意图。
图5是本发明中保护层、硬化层以及ITO层的结构示意图。
图6是本发明中保护层、硬化层、ITO层以及光阻层的结构示意图。
图7是本发明中光罩处理的示意图。
图8是本发明中显影处理后光阻层的示意图。
图9是本发明中刻蚀处理后光阻层和ITO层的示意图。
图10是本发明中剥离处理后ITO层和硬化层的示意图。
图11是本发明中光阻剥离液的隔离结构的制备方法的流程图。
图12是本发明中TFT阵列的制备方法的流程图。
具体实施方式
为使本发明的目的、技术方案及优点更加清楚、明确，以下参照附图并举实施例对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
请同时参阅图1-图10，本发明提供了一种光阻剥离液的隔离结构的一些实施例。
如图1所示，现有技术中，在TFT阵列制备过程中，对铟锡氧化物导体透明导电膜(简称ITO)层进行光刻可以得到预设图形的ITO层4，在光刻过程中，通常在ITO层4上涂上光阻剂形成光阻层5，然后在预设图形的反结构的光罩6下进行曝光，曝光的光阻层5也就具有预设图形，在通过显影去除曝光的光阻层后，通过刻蚀去除对应的ITO层，保留未曝光的光阻层对应的ITO层，最后采用光阻剥离液去除光阻层，则得到预设图形的ITO层。
而ITO层4通常是设置在有机平坦(保护)层上的，在去除光阻层对应的ITO层后，露出了保护层3，在后续制程的采用光阻剥离液去除曝光的光阻层5时，光阻剥离液会渗入到保护层3中，则造成保护层3膨胀，肿胀处会使顶起ITO层，导致ITO层脱落。一旦ITO层与保护层3之间出现缝隙，则光阻剥离液从裂缝处更容易地进入到保护层3中。当然，这里不仅限于保护层3存在这种问题，在另一些应用场景下，其它功能层(如，电极上的bank层)同样存在这种问题，本发明中，将上述这些功能层统称为保护层。
为了解决上述光阻剥离液的渗入所导致保护层的膨胀的问题，如图4所示，本发明的一种光阻剥离液的隔离结构，包括：保护层30、设置在所述保护层30上的硬化层70；所述硬化层70采用气体进行等离子轰击所述保护层30而成，并用于隔离所述光阻剥离液。以下有机平坦层作为保护层30进行说明。
通过等离子轰击后，保护层30表面形成一层硬化层70，硬化层70可以防止后续工序中的化学试剂(如光阻剥离液)进入到保护层30中，从而达到将光阻剥离液隔离在保护层30外的目的，保护了保护层30。
此外，硬化层70也可以阻绝水气，防止水气进入到保护层30中。采用等离子轰击，可以使硬化层70保持良好的粗糙程度和穿透率，利于光线的匀化和穿透。
在本发明的一个较佳实施例中，所述气体包括：Ar、N2、BCl3中的一种或多种。具体地，采用N2、He、Ar等物理化学性质相对稳定、不易参与发生反应的气体，还可以很好地确保保护层30不会受到杂质离子的影响；也可以采用BCl3等气体，可以快速形成硬化层70，增加硬化层70的致密度，提高硬化层70的隔离能力。
在等离子轰击过程中，上述气体形成等离子体，等离子体可以原位制造或在远处制造再流到等离子轰击腔体中。可使用包含电容式耦合等离子体、感应耦合等离子体、磁控等离子体、电子回旋共振、或微波等各种制造等离子体的应用方法。等离子体可具有高离子密度。
在本发明的一个较佳实施例中，所述等离子轰击的参数为：温度为20-30℃；压力为10-30mT；轰击时间为10-20s，功率密度为2000～3000w/cm2。具体地，在这种等离子轰击参数下，可得到厚度为10nm～100nm的硬化层70。硬化层70的厚度不宜过厚，也不宜过薄，过厚则导致保护层穿透效率降低；过薄则容易出现不能完全隔离光阻剥离液的情况。
在本发明的一个较佳实施例中，如图4-图6所示，所述隔离结构还包括：设置在所述保护层下的电极20。所述隔离结构还包括：设置在所述硬化层70上的ITO层40和设置在所述ITO层40上的光阻层50。
在本发明的一个较佳实施例中，所述光阻剥离液为有机碱，例如，所述光阻剥离液包括二甲基亚砜(DMSO)和乙醇胺(MEA)。具体地，采用光阻剥离液TOK-106(30wt％DMSO和70wt％MEA)，当然，还可以采用其它光阻剥离液，如长赖(N-300)。
基于上述任意一实施例所述的光阻剥离液的隔离结构，本发明还提供了一种TFT阵列的较佳实施例：
本发明实施例所述一种TFT阵列，包括上述任一实施例中所述的光阻剥离液的隔离结构，具体如上所述。
基于上述任意一实施例所述的光阻剥离液的隔离结构，本发明还提供了一种光阻剥离液的隔离结构的制备方法的较佳实施例：
如图11所示，本发明实施例所述一种光阻剥离液的隔离结构的制备方法，包括以下步骤：
步骤S10、提供保护层30。
具体地，所述保护层30可以是有机平坦层或bank层(bank layer)。
步骤S20、在采用气体进行等离子轰击所述保护层30，并在所述保护层上形成硬化层70得到光阻剥离液的隔离结构；其中，所述硬化层70用于隔离所述光阻剥离液。
在本发明的一个较佳实施例中，所述气体包括：Ar、N2、BCl3中的一种或多种。具体地，采用N2、He、Ar等物理化学性质相对稳定、不易参与发生反应的气体，还可以很好地保护保护层30不会受到杂质离子的影响；也可以采用BCl3等气体，可以快速形成硬化层70，增加硬化层70的致密度，提高硬化层70的隔离能力。
在本发明的一个较佳实施例中，所述等离子轰击的参数为：温度为20-30℃；压力为10-30mT；轰击时间为10-20s，功率密度为2000～3000w/cm2。具体地，在这种等离子轰击参数下，可得到厚度为10nm～100nm的硬化层70。硬化层70的厚度不宜过厚，也不宜过薄，过厚则透光率降低；过薄则容易出现不能完全隔离光阻剥离液的情况。
在本发明的一个较佳实施例中，所述光阻剥离液包括二甲基亚砜(DMSO)和乙醇胺(MEA)。例如，采用光阻剥离液TOK-106(30wt％DMSO和70wt％MEA)，具体地，还可以采用其它光阻剥离液。由于在TFT阵列中保护层采用有机材料，光阻剥离液及其容易渗入保护层，造成保护层膨胀，并使ITO层40脱落。
基于上述任意一实施例所述的光阻剥离液的隔离结构的制备方法，本发明还提供了一种TFT阵列的制备方法的较佳实施例：
如图12所示，本发明实施例所述一种TFT阵列的制备方法，包括以下步骤：
步骤S100、提供基板10。
步骤S200、在基板10上制备电极20。
具体地，本发明中基板10可以是玻璃基板、硅基板、柔性基板等。当然，这里的电极20可以是阴极或阳极。
步骤S300、在电极20上制备保护层30；其中，所述保护层30为有机平坦层或bank层，具体如上所述。
步骤S400、采用如上述任意一项光阻剥离液的隔离结构的制备方法在保护层上制备硬化层70。
具体地，对保护层30进行等离子轰击形成硬化层70。
步骤S500、在硬化层70上制备ITO层40。
具体地，ITO层40可以采用沉积法制备。
步骤S600、在ITO层40上制备光阻层50并进行光刻处理。
具体地，这里的光刻包括：光罩、曝光、显影、刻蚀等处理，当然在光刻过程中还包括烘干、检测、清洗等步骤。如图7所示，光罩处理是采用采用光罩60对准遮挡光阻层50后进行曝光处理，然后通过显影处理将未曝光的光阻层去除(如图8所示)，最后通过刻蚀将未曝光处理的光阻层对应的ITO层刻蚀掉(如图9所示)。
步骤S700、采用光阻剥离液对光阻层50进行剥离处理。
具体地，如图6-图10所示，在光刻完后需要采用光阻剥离液对剩余的光阻层50进行剥离处理，由于本发明中在保护层上形成了硬化层70，在去除未曝光的光阻层50对应的ITO层40后，露出了硬化层70，而没有露出保护层，一方面，硬化层70较为致密，光阻剥离液无法穿过硬化层70而渗入到保护层中，另一方面，硬化层70的硬度较高，即使有光阻剥离液渗入到保护层中，高硬度的硬化层70也会阻碍保护层的膨胀，而且(纳米级)粗糙的硬化层70可以加强保护层与ITO层40之间的粘附性，进一步防止ITO层40从硬化层70上脱落。
综上所述，本发明所提供的一种光阻剥离液的隔离结构、TFT阵列及其制备方法，所述隔离结构包括：保护层、设置在所述保护层上的硬化层；所述硬化层采用气体进行等离子轰击所述保护层而成，并用于隔离所述光阻剥离液。通过在有机平坦层等保护层表面形成一层硬化层，硬化层可以防止后续工序中的化学试剂，如光阻剥离液，进入到保护层中，从而达到将光阻剥离液隔离在保护层外的目的，保护了保护层。
应当理解的是，本发明的应用不限于上述的举例，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，所有这些改进和变换都应属于本发明所附权利要求的保护范围。

Claims (15)

1.一种光阻剥离液的隔离结构，其特征在于，包括：保护层、设置在所述保护层上的硬化层；所述硬化层采用气体进行等离子轰击所述保护层而成，并用于隔离所述光阻剥离液。
2.根据权利要求1所述的光阻剥离液的隔离结构，其特征在于，所述气体包括：Ar、N2、BCl3中的一种或多种。
3.根据权利要求1所述的光阻剥离液的隔离结构，其特征在于，所述保护层为有机平坦层。
4.根据权利要求3所述的光阻剥离液的隔离结构，其特征在于，所述隔离结构还包括：设置在所述有机平坦层下的电极。
5.根据权利要求4所述的光阻剥离液的隔离结构，其特征在于，所述隔离结构还包括：设置在所述硬化层上的ITO层和设置在所述ITO层上的光阻层。
6.根据权利要求1-5任意一项所述的光阻剥离液的隔离结构，其特征在于，所述等离子轰击的参数为：温度为20-30℃；压力为10-30mT；轰击时间为10-20s，功率密度为2000～3000w/cm2。
7.根据权利要求1-5任意一项所述的光阻剥离液的隔离结构，其特征在于，所述光阻剥离液包括二甲基亚砜和乙醇胺。
8.一种TFT阵列，其特征在于，包括：如权利要求1-7任意一项所述的光阻剥离液的隔离结构。
9.一种光阻剥离液的隔离结构的制备方法，其特征在于，所述隔离结构的制备方法包括如下步骤：
提供保护层；
在采用气体进行等离子轰击所述保护层，并在所述保护层上形成硬化层得到光阻剥离液的隔离结构；其中，所述硬化层用于隔离所述光阻剥离液。
10.根据权利要求9所述的光阻剥离液的隔离结构的制备方法，其特征在于，所述气体包括：Ar、N2、BCl3中的一种或多种。
11.根据权利要求9所述的光阻剥离液的隔离结构的制备方法，其特征在于，所述保护层为有机平坦层。
12.根据权利要求9-11任意一项所述的光阻剥离液的隔离结构的制备方法，其特征在于，所述等离子轰击的参数为：温度为20-30℃；压力为10-30mT；轰击时间为10-20s，功率密度为2000～3000w/cm2。
13.根据权利要求9-11任意一项所述的光阻剥离液的隔离结构的制备方法，其特征在于，所述光阻剥离液为二甲基亚砜和乙醇胺。
14.一种TFT阵列的制备方法，其特征在于，所述TFT阵列的制备方法包括如下步骤：
提供基板；
在基板上制备电极；
在电极上制备保护层；其中，所述保护层为有机平坦层；
采用如权利要求9-13任意一项光阻剥离液的隔离结构的制备方法在有机平坦层上制备硬化层。
15.根据权利要求14所述的TFT阵列的制备方法，其特征在于，所述TFT阵列的制备方法还包括如下步骤：
在硬化层上制备ITO层；
在ITO层上制备光阻层并进行光刻处理；
采用光阻剥离液对光阻层进行剥离处理。
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