CN110993557A - 用于在半导体主体中形成绝缘层的方法和晶体管器件 - Google Patents

用于在半导体主体中形成绝缘层的方法和晶体管器件 Download PDF

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Publication number
CN110993557A
CN110993557A CN201910933727.8A CN201910933727A CN110993557A CN 110993557 A CN110993557 A CN 110993557A CN 201910933727 A CN201910933727 A CN 201910933727A CN 110993557 A CN110993557 A CN 110993557A
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Prior art keywords
insulating layer
trench
semiconductor body
forming
layer
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CN201910933727.8A
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Chinese (zh)
Inventor
H·韦伯
C·法赫曼
F·赫勒
W·凯因德尔
M·罗赫尔
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Infineon Technologies Austria AG
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Infineon Technologies Austria AG
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Priority claimed from DE102018124418.5A external-priority patent/DE102018124418A1/de
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Publication of CN110993557A publication Critical patent/CN110993557A/zh
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    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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