CN110944936A - 电容性微结构 - Google Patents

电容性微结构 Download PDF

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Publication number
CN110944936A
CN110944936A CN201880049138.7A CN201880049138A CN110944936A CN 110944936 A CN110944936 A CN 110944936A CN 201880049138 A CN201880049138 A CN 201880049138A CN 110944936 A CN110944936 A CN 110944936A
Authority
CN
China
Prior art keywords
electrode
top surface
layer
substrate
microstructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201880049138.7A
Other languages
English (en)
Chinese (zh)
Inventor
H·凯特卢斯
T·瓦哈-海基拉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
VTT Technical Research Centre of Finland Ltd
Original Assignee
VTT Technical Research Centre of Finland Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by VTT Technical Research Centre of Finland Ltd filed Critical VTT Technical Research Centre of Finland Ltd
Publication of CN110944936A publication Critical patent/CN110944936A/zh
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/00698—Electrical characteristics, e.g. by doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/016—Switches characterised by the shape having a bridge fixed on two ends and connected to one or more dimples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0221—Variable capacitors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/016—Passivation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Micromachines (AREA)
  • Ceramic Capacitors (AREA)
CN201880049138.7A 2017-06-19 2018-06-15 电容性微结构 Pending CN110944936A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FI20175571 2017-06-19
FI20175571 2017-06-19
PCT/FI2018/050467 WO2018234629A1 (en) 2017-06-19 2018-06-15 Capacitive micro structure

Publications (1)

Publication Number Publication Date
CN110944936A true CN110944936A (zh) 2020-03-31

Family

ID=62816591

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880049138.7A Pending CN110944936A (zh) 2017-06-19 2018-06-15 电容性微结构

Country Status (6)

Country Link
US (1) US11548779B2 (enExample)
EP (1) EP3642151A1 (enExample)
JP (1) JP2020524917A (enExample)
KR (1) KR20200015772A (enExample)
CN (1) CN110944936A (enExample)
WO (1) WO2018234629A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12454454B2 (en) 2022-03-31 2025-10-28 Beijing Boe Optoelectronics Technology Co., Ltd. Electronic device and method of fabricating the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025030040A (ja) * 2023-08-22 2025-03-07 大熊ダイヤモンドデバイス株式会社 コンデンサ、電気機械器具、及びコンデンサの製造方法

Citations (11)

* Cited by examiner, † Cited by third party
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US6180976B1 (en) * 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
US20070134835A1 (en) * 2005-12-06 2007-06-14 Hiroshi Fukuda Switch using micro electro mechanical system
US20070216027A1 (en) * 2006-03-15 2007-09-20 Nec Electronics Corporation Semiconductor device
WO2008010436A1 (en) * 2006-07-19 2008-01-24 Murata Manufacturing Co., Ltd. Electrostatic actuator and method for manufacturing same
JP2008147368A (ja) * 2006-12-08 2008-06-26 Sony Corp 半導体装置
US20110063774A1 (en) * 2009-09-16 2011-03-17 Kabushiki Kaisha Toshiba Mems device
JP2011166150A (ja) * 2010-02-11 2011-08-25 Lg Innotek Co Ltd 発光素子
JP2014525665A (ja) * 2011-09-02 2014-09-29 キャベンディッシュ・キネティックス・インコーポレイテッド Ｍｅｍｓデバイス・アンカリング
US20150116893A1 (en) * 2012-04-09 2015-04-30 Koji Hanihara Electrostatic actuator, variable capacitance capacitor, electric switch, and method for driving electrostatic actuator
US20160297677A1 (en) * 2013-09-06 2016-10-13 Cavendish Kinetics, Inc. Internally generated dft stepped hysteresis sweep for electrostatic mems
US20170165715A1 (en) * 2014-07-16 2017-06-15 Koninklijke Philips N.V. Tiled cmut dies with pitch uniformity

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US6366186B1 (en) 2000-01-20 2002-04-02 Jds Uniphase Inc. Mems magnetically actuated switches and associated switching arrays
JP3643091B2 (ja) * 2001-06-25 2005-04-27 松下電器産業株式会社 半導体記憶装置及びその製造方法
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
CN1531063A (zh) * 2003-03-14 2004-09-22 中芯国际集成电路制造（上海）有限公 双面容器电容器的制造方法
US10266398B1 (en) * 2007-07-25 2019-04-23 Hrl Laboratories, Llc ALD metal coatings for high Q MEMS structures
JP5202236B2 (ja) 2007-11-13 2013-06-05 株式会社半導体エネルギー研究所 微小電気機械スイッチ及びその作製方法
JP5204066B2 (ja) 2009-09-16 2013-06-05 株式会社東芝 Ｍｅｍｓデバイス
PL2506282T3 (pl) 2011-03-28 2014-02-28 Delfmems Przełącznik krzyżowy RF MEMS i matryca przełączników krzyżowych zawierająca przełączniki krzyżowe RF MEMS
US8592876B2 (en) 2012-01-03 2013-11-26 International Business Machines Corporation Micro-electro-mechanical system (MEMS) capacitive OHMIC switch and design structures
JP2016059191A (ja) * 2014-09-11 2016-04-21 ソニー株式会社 静電型デバイス
JP2016171224A (ja) 2015-03-13 2016-09-23 株式会社東芝 可変容量バンク装置
WO2016203106A1 (en) * 2015-06-15 2016-12-22 Teknologian Tutkimuskeskus Vtt Oy Mems capacitive pressure sensor and manufacturing method

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6180976B1 (en) * 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
US20070134835A1 (en) * 2005-12-06 2007-06-14 Hiroshi Fukuda Switch using micro electro mechanical system
US20070216027A1 (en) * 2006-03-15 2007-09-20 Nec Electronics Corporation Semiconductor device
WO2008010436A1 (en) * 2006-07-19 2008-01-24 Murata Manufacturing Co., Ltd. Electrostatic actuator and method for manufacturing same
JP2008147368A (ja) * 2006-12-08 2008-06-26 Sony Corp 半導体装置
US20110063774A1 (en) * 2009-09-16 2011-03-17 Kabushiki Kaisha Toshiba Mems device
JP2011166150A (ja) * 2010-02-11 2011-08-25 Lg Innotek Co Ltd 発光素子
JP2014525665A (ja) * 2011-09-02 2014-09-29 キャベンディッシュ・キネティックス・インコーポレイテッド Ｍｅｍｓデバイス・アンカリング
US20150116893A1 (en) * 2012-04-09 2015-04-30 Koji Hanihara Electrostatic actuator, variable capacitance capacitor, electric switch, and method for driving electrostatic actuator
US20160297677A1 (en) * 2013-09-06 2016-10-13 Cavendish Kinetics, Inc. Internally generated dft stepped hysteresis sweep for electrostatic mems
US20170165715A1 (en) * 2014-07-16 2017-06-15 Koninklijke Philips N.V. Tiled cmut dies with pitch uniformity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12454454B2 (en) 2022-03-31 2025-10-28 Beijing Boe Optoelectronics Technology Co., Ltd. Electronic device and method of fabricating the same

Also Published As

Publication number Publication date
WO2018234629A1 (en) 2018-12-27
EP3642151A1 (en) 2020-04-29
US20200180943A1 (en) 2020-06-11
KR20200015772A (ko) 2020-02-12
JP2020524917A (ja) 2020-08-20
US11548779B2 (en) 2023-01-10

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