JP2020524917A - 容量性微細構造 - Google Patents

容量性微細構造 Download PDF

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Publication number
JP2020524917A
JP2020524917A JP2020519183A JP2020519183A JP2020524917A JP 2020524917 A JP2020524917 A JP 2020524917A JP 2020519183 A JP2020519183 A JP 2020519183A JP 2020519183 A JP2020519183 A JP 2020519183A JP 2020524917 A JP2020524917 A JP 2020524917A
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JP
Japan
Prior art keywords
electrode
substrate
layer
microstructure
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2020519183A
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English (en)
Japanese (ja)
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JP2020524917A5 (enExample
Inventor
ハンヌ カッテラス
ハンヌ カッテラス
タウノ ヴァハ−ヘイッキラ
タウノ ヴァハ−ヘイッキラ
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VTT Technical Research Centre of Finland Ltd
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VTT Technical Research Centre of Finland Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by VTT Technical Research Centre of Finland Ltd filed Critical VTT Technical Research Centre of Finland Ltd
Publication of JP2020524917A publication Critical patent/JP2020524917A/ja
Publication of JP2020524917A5 publication Critical patent/JP2020524917A5/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/00698—Electrical characteristics, e.g. by doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/016—Switches characterised by the shape having a bridge fixed on two ends and connected to one or more dimples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0221—Variable capacitors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/016—Passivation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Micromachines (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
JP2020519183A 2017-06-19 2018-06-15 容量性微細構造 Pending JP2020524917A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FI20175571 2017-06-19
FI20175571 2017-06-19
PCT/FI2018/050467 WO2018234629A1 (en) 2017-06-19 2018-06-15 Capacitive micro structure

Publications (2)

Publication Number Publication Date
JP2020524917A true JP2020524917A (ja) 2020-08-20
JP2020524917A5 JP2020524917A5 (enExample) 2021-05-06

Family

ID=62816591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020519183A Pending JP2020524917A (ja) 2017-06-19 2018-06-15 容量性微細構造

Country Status (6)

Country Link
US (1) US11548779B2 (enExample)
EP (1) EP3642151A1 (enExample)
JP (1) JP2020524917A (enExample)
KR (1) KR20200015772A (enExample)
CN (1) CN110944936A (enExample)
WO (1) WO2018234629A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025041603A1 (ja) * 2023-08-22 2025-02-27 大熊ダイヤモンドデバイス株式会社 コンデンサ、電気機械器具、及びコンデンサの製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023184375A1 (zh) 2022-03-31 2023-10-05 京东方科技集团股份有限公司 电子器件及制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086771A (ja) * 2001-06-25 2003-03-20 Matsushita Electric Ind Co Ltd 容量素子、半導体記憶装置及びその製造方法
WO2008010436A1 (en) * 2006-07-19 2008-01-24 Murata Manufacturing Co., Ltd. Electrostatic actuator and method for manufacturing same
JP2008147368A (ja) * 2006-12-08 2008-06-26 Sony Corp 半導体装置
JP2011066150A (ja) * 2009-09-16 2011-03-31 Toshiba Corp Ｍｅｍｓデバイス
JP2014525665A (ja) * 2011-09-02 2014-09-29 キャベンディッシュ・キネティックス・インコーポレイテッド Ｍｅｍｓデバイス・アンカリング

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Publication number Priority date Publication date Assignee Title
US6180976B1 (en) * 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
US6366186B1 (en) 2000-01-20 2002-04-02 Jds Uniphase Inc. Mems magnetically actuated switches and associated switching arrays
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
CN1531063A (zh) * 2003-03-14 2004-09-22 中芯国际集成电路制造（上海）有限公 双面容器电容器的制造方法
JP2007157511A (ja) * 2005-12-06 2007-06-21 Hitachi Ltd マイクロエレクトロメカニカルシステムを用いたスイッチ
JP5027431B2 (ja) * 2006-03-15 2012-09-19 ルネサスエレクトロニクス株式会社 半導体装置
US10266398B1 (en) * 2007-07-25 2019-04-23 Hrl Laboratories, Llc ALD metal coatings for high Q MEMS structures
JP5202236B2 (ja) 2007-11-13 2013-06-05 株式会社半導体エネルギー研究所 微小電気機械スイッチ及びその作製方法
JP5204066B2 (ja) 2009-09-16 2013-06-05 株式会社東芝 Ｍｅｍｓデバイス
KR100986560B1 (ko) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
EP2506282B1 (en) 2011-03-28 2013-09-11 Delfmems RF MEMS crosspoint switch and crosspoint switch matrix comprising RF MEMS crosspoint switches
US8592876B2 (en) 2012-01-03 2013-11-26 International Business Machines Corporation Micro-electro-mechanical system (MEMS) capacitive OHMIC switch and design structures
US9912255B2 (en) * 2012-04-09 2018-03-06 Pioneer Corporation Electrostatic actuator, variable capacitance capacitor, electric switch, and method for driving electrostatic actuator
US10898924B2 (en) * 2014-07-16 2021-01-26 Koninklijke Philips N.V. Tiled CMUT dies with pitch uniformity
CN105593158B (zh) * 2014-09-05 2019-02-01 卡文迪什动力有限公司 内部生成的用于静电mems的dft阶梯式迟滞扫描
JP2016059191A (ja) * 2014-09-11 2016-04-21 ソニー株式会社 静電型デバイス
JP2016171224A (ja) 2015-03-13 2016-09-23 株式会社東芝 可変容量バンク装置
EP3308122A1 (en) * 2015-06-15 2018-04-18 Teknologian Tutkimuskeskus VTT OY Mems capacitive pressure sensor and manufacturing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086771A (ja) * 2001-06-25 2003-03-20 Matsushita Electric Ind Co Ltd 容量素子、半導体記憶装置及びその製造方法
WO2008010436A1 (en) * 2006-07-19 2008-01-24 Murata Manufacturing Co., Ltd. Electrostatic actuator and method for manufacturing same
JP2008147368A (ja) * 2006-12-08 2008-06-26 Sony Corp 半導体装置
JP2011066150A (ja) * 2009-09-16 2011-03-31 Toshiba Corp Ｍｅｍｓデバイス
JP2014525665A (ja) * 2011-09-02 2014-09-29 キャベンディッシュ・キネティックス・インコーポレイテッド Ｍｅｍｓデバイス・アンカリング

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025041603A1 (ja) * 2023-08-22 2025-02-27 大熊ダイヤモンドデバイス株式会社 コンデンサ、電気機械器具、及びコンデンサの製造方法

Also Published As

Publication number Publication date
EP3642151A1 (en) 2020-04-29
US20200180943A1 (en) 2020-06-11
KR20200015772A (ko) 2020-02-12
CN110944936A (zh) 2020-03-31
WO2018234629A1 (en) 2018-12-27
US11548779B2 (en) 2023-01-10

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