JP2020524917A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2020524917A5 JP2020524917A5 JP2020519183A JP2020519183A JP2020524917A5 JP 2020524917 A5 JP2020524917 A5 JP 2020524917A5 JP 2020519183 A JP2020519183 A JP 2020519183A JP 2020519183 A JP2020519183 A JP 2020519183A JP 2020524917 A5 JP2020524917 A5 JP 2020524917A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrate
- layer
- dielectric layer
- microstructure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 75
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000003990 capacitor Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000002161 passivation Methods 0.000 claims description 13
- 238000000231 atomic layer deposition Methods 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 117
- 238000005516 engineering process Methods 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 15
- 239000012212 insulator Substances 0.000 description 13
- 239000002243 precursor Substances 0.000 description 13
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 208000024875 Infantile dystonia-parkinsonism Diseases 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 208000001543 infantile parkinsonism-dystonia Diseases 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004140 HfO Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20175571 | 2017-06-19 | ||
| FI20175571 | 2017-06-19 | ||
| PCT/FI2018/050467 WO2018234629A1 (en) | 2017-06-19 | 2018-06-15 | Capacitive micro structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2020524917A JP2020524917A (ja) | 2020-08-20 |
| JP2020524917A5 true JP2020524917A5 (enExample) | 2021-05-06 |
Family
ID=62816591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020519183A Pending JP2020524917A (ja) | 2017-06-19 | 2018-06-15 | 容量性微細構造 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11548779B2 (enExample) |
| EP (1) | EP3642151A1 (enExample) |
| JP (1) | JP2020524917A (enExample) |
| KR (1) | KR20200015772A (enExample) |
| CN (1) | CN110944936A (enExample) |
| WO (1) | WO2018234629A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12454454B2 (en) | 2022-03-31 | 2025-10-28 | Beijing Boe Optoelectronics Technology Co., Ltd. | Electronic device and method of fabricating the same |
| JP2025030040A (ja) * | 2023-08-22 | 2025-03-07 | 大熊ダイヤモンドデバイス株式会社 | コンデンサ、電気機械器具、及びコンデンサの製造方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6180976B1 (en) | 1999-02-02 | 2001-01-30 | Conexant Systems, Inc. | Thin-film capacitors and methods for forming the same |
| US6366186B1 (en) | 2000-01-20 | 2002-04-02 | Jds Uniphase Inc. | Mems magnetically actuated switches and associated switching arrays |
| JP3643091B2 (ja) * | 2001-06-25 | 2005-04-27 | 松下電器産業株式会社 | 半導体記憶装置及びその製造方法 |
| US7259410B2 (en) | 2001-07-25 | 2007-08-21 | Nantero, Inc. | Devices having horizontally-disposed nanofabric articles and methods of making the same |
| CN1531063A (zh) * | 2003-03-14 | 2004-09-22 | 中芯国际集成电路制造（上海）有限公 | 双面容器电容器的制造方法 |
| JP2007157511A (ja) * | 2005-12-06 | 2007-06-21 | Hitachi Ltd | マイクロエレクトロメカニカルシステムを用いたスイッチ |
| JP5027431B2 (ja) * | 2006-03-15 | 2012-09-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| WO2008010436A1 (en) * | 2006-07-19 | 2008-01-24 | Murata Manufacturing Co., Ltd. | Electrostatic actuator and method for manufacturing same |
| JP2008147368A (ja) * | 2006-12-08 | 2008-06-26 | Sony Corp | 半導体装置 |
| US10266398B1 (en) * | 2007-07-25 | 2019-04-23 | Hrl Laboratories, Llc | ALD metal coatings for high Q MEMS structures |
| JP5202236B2 (ja) | 2007-11-13 | 2013-06-05 | 株式会社半導体エネルギー研究所 | 微小電気機械スイッチ及びその作製方法 |
| JP5204066B2 (ja) | 2009-09-16 | 2013-06-05 | 株式会社東芝 | Ｍｅｍｓデバイス |
| JP5050022B2 (ja) * | 2009-09-16 | 2012-10-17 | 株式会社東芝 | Ｍｅｍｓデバイス |
| KR100986560B1 (ko) * | 2010-02-11 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
| ES2436644T3 (es) | 2011-03-28 | 2014-01-03 | Delfmems | Conmutador de punto de cruce MEMS de RF y matriz de conmutador de punto de cruce que comprende conmutadores de punto de cruce MEMS de RF |
| JP6165730B2 (ja) * | 2011-09-02 | 2017-07-19 | キャベンディッシュ・キネティックス・インコーポレイテッドＣａｖｅｎｄｉｓｈ Ｋｉｎｅｔｉｃｓ， Ｉｎｃ． | Ｍｅｍｓデバイス・アンカリング |
| US8592876B2 (en) | 2012-01-03 | 2013-11-26 | International Business Machines Corporation | Micro-electro-mechanical system (MEMS) capacitive OHMIC switch and design structures |
| WO2013153566A1 (ja) * | 2012-04-09 | 2013-10-17 | パイオニア株式会社 | 静電アクチュエーター、可変容量コンデンサー、電気スイッチおよび静電アクチュエーターの駆動方法 |
| WO2016036422A1 (en) * | 2014-09-05 | 2016-03-10 | Cavendish Kinetics, Inc | Internally generated dft stepped hysteresis sweep for electrostatic mems |
| EP3169449B1 (en) * | 2014-07-16 | 2018-03-21 | Koninklijke Philips N.V. | Tiled cmut dies with pitch uniformity |
| JP2016059191A (ja) * | 2014-09-11 | 2016-04-21 | ソニー株式会社 | 静電型デバイス |
| JP2016171224A (ja) | 2015-03-13 | 2016-09-23 | 株式会社東芝 | 可変容量バンク装置 |
| CN107850505A (zh) * | 2015-06-15 | 2018-03-27 | 芬兰国家技术研究中心股份公司 | Mems电容式压力传感器以及制造方法 |
-
2018
- 2018-06-15 EP EP18737327.9A patent/EP3642151A1/en not_active Withdrawn
- 2018-06-15 KR KR1020207001532A patent/KR20200015772A/ko not_active Ceased
- 2018-06-15 JP JP2020519183A patent/JP2020524917A/ja active Pending
- 2018-06-15 US US16/624,181 patent/US11548779B2/en active Active
- 2018-06-15 WO PCT/FI2018/050467 patent/WO2018234629A1/en not_active Ceased
- 2018-06-15 CN CN201880049138.7A patent/CN110944936A/zh active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10160635B2 (en) | MEMS device and process for RF and low resistance applications | |
| US7994877B1 (en) | MEMS-based quartz hybrid filters and a method of making the same | |
| US20200294908A1 (en) | Bonded structures with integrated passive component | |
| CN111512547B (zh) | 混合滤波器 | |
| WO2019117073A1 (ja) | ガラス配線基板、その製造方法及び半導体装置 | |
| US20220301968A1 (en) | Semiconductor apparatus | |
| WO2009120407A2 (en) | Integrated passive device and method with low cost substrate | |
| US10732041B2 (en) | Microelectromechanical (MEMS) fabry-perot interferometer, apparatus and method for manufacturing fabry-perot interferometer | |
| JPWO2008041565A1 (ja) | コンデンサ、コンデンサ装置、電子部品、フィルタ装置、通信装置、およびコンデンサ装置の製造方法 | |
| CN108022754B (zh) | 多层薄膜电容器 | |
| JP2020524917A5 (enExample) | ||
| JP6593209B2 (ja) | 電子部品 | |
| US11548779B2 (en) | Capacitive micro structure | |
| JP2001044778A (ja) | 複合電子部品 | |
| US12177986B2 (en) | Component and method for manufacturing a component | |
| CN118382899A (zh) | 半导体装置、匹配电路以及滤波器电路 | |
| JP2003173928A (ja) | 薄膜コンデンサおよび薄膜コンデンサの製造方法 |