CN110894592A - 一种自旋半导体ZrO2薄膜的制备方法 - Google Patents

一种自旋半导体ZrO2薄膜的制备方法 Download PDF

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Publication number
CN110894592A
CN110894592A CN201911352670.9A CN201911352670A CN110894592A CN 110894592 A CN110894592 A CN 110894592A CN 201911352670 A CN201911352670 A CN 201911352670A CN 110894592 A CN110894592 A CN 110894592A
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Prior art keywords
zro
film
substrate
oxygen
semiconductor
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Inventor
沈洪雪
彭塞奥
杨扬
李刚
陆勇
时君
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation

Abstract

本发明公开一种自旋半导体ZrO2薄膜的制备方法，包括以下步骤：a、清洗衬底，去除衬底表面的污渍；b、将衬底置于磁控溅射腔室内，采用金属锆作为靶材，在衬底表面沉积ZrO2薄膜；c、采用离子注入机，以O2为氧源，对准ZrO2薄膜进行氧离子的注入，使氧过量，得到自旋半导体ZrO2薄膜；该方法利用ZrO2进行磁性改变，工艺简单，可控性、操作性强，且整个过程不会引入其他杂质。

Description

一种自旋半导体ZrO2薄膜的制备方法
技术领域
本发明涉及掺杂薄膜制备技术领域，具体是一种自旋半导体ZrO2薄膜的制备方法。
背景技术
传统的自旋电子材料都是在半导体的基础上引入掺杂材料，从而在主材料上引入自旋，达到改变材料物理性能，使其向稀磁半导体方向转变。
金属掺杂是目前研究较多的掺杂元素，但是利用自身非金属材料的过量来改变其磁性功能不是很多见。
发明内容
本发明的目的在于提供一种自旋半导体ZrO2薄膜的制备方法，该方法利用ZrO2进行磁性改变，工艺简单，可控性、操作性强，且整个过程不会引入其他杂质。
本发明解决其技术问题所采用的技术方案是：
一种自旋半导体ZrO2薄膜的制备方法，包括以下步骤：
a、清洗衬底，去除衬底表面的污渍；
b、将衬底置于磁控溅射腔室内，采用金属锆作为靶材，在衬底表面沉积ZrO2薄膜；
c、采用离子注入机，以O2为氧源，对准ZrO2薄膜进行氧离子的注入，使氧过量，得到自旋半导体ZrO2薄膜。
本发明的有益效果是：
一、采用磁控溅射进行以金属锆为靶材的ZrO2薄膜的制备，工艺简单，可控性、操作性强。
二、离子注入机对ZrO2薄膜进行氧离子注入，并与其中的Zr进行反应，使薄膜中的氧过量，从而使其ZrO2薄膜的磁性发生转变。
三、以O2为离子源，O2无毒无害，且是薄膜的组成部分，整个过程不会引入其他杂质。
具体实施方式
本发明提供一种自旋半导体ZrO2薄膜的制备方法，包括以下步骤：
a、采用普通玻璃作为衬底，清洗衬底，去除衬底表面的污渍；可使用丙酮、酒精、去离子水等超声波清洗，然后热风吹干；
b、将衬底置于磁控溅射腔室内，采用金属锆作为靶材，金属锆纯度99.99%，先对磁控溅射腔室抽真空，当真空度达到8.6*10－4Pa时启动镀膜系统，通入氩气，氩离子轰击靶材进行预溅射，达到活化靶材和去除靶材表面氧化物的目的，然后设定工艺参数，在衬底表面进行ZrO2薄膜的沉积，具体工艺参数为：功率为100W，工作气压0.8Pa，Ar流量为30sccm，O2流量为10sccm，溅射时间为25min；
c、采用离子注入机，以O2为氧源，对准ZrO2薄膜进行氧离子的注入，氧离子参与反应并最终过量，注入结束，最终得到自旋半导体ZrO2薄膜。
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制；任何熟悉本领域的技术人员，在不脱离本发明技术方案范围情况下，都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰，均仍属于本发明技术方案保护的范围内。

Claims (1)

1.一种自旋半导体ZrO2薄膜的制备方法，其特征在于，包括以下步骤：
a、清洗衬底，去除衬底表面的污渍；
b、将衬底置于磁控溅射腔室内，采用金属锆作为靶材，在衬底表面沉积ZrO2薄膜；
c、采用离子注入机，以O2为氧源，对准ZrO2薄膜进行氧离子的注入，使氧过量，得到自旋半导体ZrO2薄膜。
CN201911352670.9A 2019-12-25 2019-12-25 一种自旋半导体ZrO2薄膜的制备方法 Withdrawn CN110894592A (zh)

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CN108579749A (zh) * 2018-04-08 2018-09-28 浙江工业大学 一种高缺陷单斜相纳米氧化锆负载镍金属催化剂及其制备和使用方法
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CN110225995A (zh) * 2017-01-25 2019-09-10 应用材料公司 用于沉积、注入和处理的具有多种反应气体、高偏置功率和高功率脉冲源的pvd腔室的增设部分

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CN104451569A (zh) * 2013-09-17 2015-03-25 无锡慧明电子科技有限公司 一种离子注入提高大尺寸磁控溅射膜质量的方法
US20170077307A1 (en) * 2015-04-30 2017-03-16 Boe Technology Group Co., Ltd. Oxide semiconductor thin film, thin film transistor, manufacturing method and device
CN110225995A (zh) * 2017-01-25 2019-09-10 应用材料公司 用于沉积、注入和处理的具有多种反应气体、高偏置功率和高功率脉冲源的pvd腔室的增设部分
CN108149195A (zh) * 2017-12-25 2018-06-12 中建材蚌埠玻璃工业设计研究院有限公司 一种超耐磨高透过率氧化锆薄膜的制备方法
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Application publication date: 20200320