CN110872690A - 成膜装置、成膜方法及电子器件的制造方法 - Google Patents

成膜装置、成膜方法及电子器件的制造方法 Download PDF

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Publication number
CN110872690A
CN110872690A CN201910709372.4A CN201910709372A CN110872690A CN 110872690 A CN110872690 A CN 110872690A CN 201910709372 A CN201910709372 A CN 201910709372A CN 110872690 A CN110872690 A CN 110872690A
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China
Prior art keywords
pressure
target
sputtering
chamber
film
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Pending
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CN201910709372.4A
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English (en)
Chinese (zh)
Inventor
菅原洋纪
松本行生
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Canon Tokki Corp
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Canon Tokki Corp
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Publication date
Application filed by Canon Tokki Corp filed Critical Canon Tokki Corp
Publication of CN110872690A publication Critical patent/CN110872690A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
CN201910709372.4A 2018-08-31 2019-08-02 成膜装置、成膜方法及电子器件的制造方法 Pending CN110872690A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018163110A JP7202814B2 (ja) 2018-08-31 2018-08-31 成膜装置、成膜方法、および電子デバイスの製造方法
JP2018-163110 2018-08-31

Publications (1)

Publication Number Publication Date
CN110872690A true CN110872690A (zh) 2020-03-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910709372.4A Pending CN110872690A (zh) 2018-08-31 2019-08-02 成膜装置、成膜方法及电子器件的制造方法

Country Status (3)

Country Link
JP (1) JP7202814B2 (ko)
KR (2) KR102578738B1 (ko)
CN (1) CN110872690A (ko)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1161401A (ja) * 1997-08-21 1999-03-05 Matsushita Electric Ind Co Ltd スパッタリング方法及び装置
US20010039921A1 (en) * 1997-02-21 2001-11-15 J. Brett Rolfson Method and apparatus for controlling rate of pressure change in a vacuum process chamber
KR20070025382A (ko) * 2005-09-01 2007-03-08 삼성전자주식회사 다수의 압력센서를 구비하는 반도체 화학기상증착 장치
US20100285237A1 (en) * 2001-09-10 2010-11-11 Tegal Corporation Nanolayer deposition using bias power treatment
JP2011243834A (ja) * 2010-05-20 2011-12-01 Tokyo Electron Ltd プラズマ処理装置，基板保持機構，基板位置ずれ検出方法
JP2014070236A (ja) * 2012-09-28 2014-04-21 Tokai Rubber Ind Ltd マグネトロンスパッタ成膜装置、マグネトロンスパッタ成膜方法、およびそれを用いて製造されるフィルム部材
JP2015063724A (ja) * 2013-09-25 2015-04-09 日立造船株式会社 真空蒸着装置
CN106488996A (zh) * 2014-07-09 2017-03-08 梭莱先进镀膜工业有限公司 具有动靶的溅镀装置
JP2018053272A (ja) * 2016-09-26 2018-04-05 株式会社Ｓｃｒｅｅｎホールディングス 成膜装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005139549A (ja) 2003-10-15 2005-06-02 Olympus Corp 薄膜形成装置及び薄膜形成方法並びに光学素子
JP2007182617A (ja) 2006-01-10 2007-07-19 Ulvac Japan Ltd スパッタ成膜方法及び装置
EP2437280A1 (en) 2010-09-30 2012-04-04 Applied Materials, Inc. Systems and methods for forming a layer of sputtered material

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010039921A1 (en) * 1997-02-21 2001-11-15 J. Brett Rolfson Method and apparatus for controlling rate of pressure change in a vacuum process chamber
JPH1161401A (ja) * 1997-08-21 1999-03-05 Matsushita Electric Ind Co Ltd スパッタリング方法及び装置
US20100285237A1 (en) * 2001-09-10 2010-11-11 Tegal Corporation Nanolayer deposition using bias power treatment
KR20070025382A (ko) * 2005-09-01 2007-03-08 삼성전자주식회사 다수의 압력센서를 구비하는 반도체 화학기상증착 장치
JP2011243834A (ja) * 2010-05-20 2011-12-01 Tokyo Electron Ltd プラズマ処理装置，基板保持機構，基板位置ずれ検出方法
JP2014070236A (ja) * 2012-09-28 2014-04-21 Tokai Rubber Ind Ltd マグネトロンスパッタ成膜装置、マグネトロンスパッタ成膜方法、およびそれを用いて製造されるフィルム部材
JP2015063724A (ja) * 2013-09-25 2015-04-09 日立造船株式会社 真空蒸着装置
CN106488996A (zh) * 2014-07-09 2017-03-08 梭莱先进镀膜工业有限公司 具有动靶的溅镀装置
JP2018053272A (ja) * 2016-09-26 2018-04-05 株式会社Ｓｃｒｅｅｎホールディングス 成膜装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SHUICHI TAJIRI ET AL.: "Measurement of Steady State Pressure Distribution and Dynamic Pressure Fluctuations During Sputtering Process", 《J. VAC. SOC. JPN.》 *

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KR102578738B1 (ko) 2023-09-13
KR20200025982A (ko) 2020-03-10
KR102632430B1 (ko) 2024-01-31
JP2020033624A (ja) 2020-03-05
KR20230054635A (ko) 2023-04-25
JP7202814B2 (ja) 2023-01-12

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