JP7202814B2 - 成膜装置、成膜方法、および電子デバイスの製造方法 - Google Patents

成膜装置、成膜方法、および電子デバイスの製造方法 Download PDF

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Publication number
JP7202814B2
JP7202814B2 JP2018163110A JP2018163110A JP7202814B2 JP 7202814 B2 JP7202814 B2 JP 7202814B2 JP 2018163110 A JP2018163110 A JP 2018163110A JP 2018163110 A JP2018163110 A JP 2018163110A JP 7202814 B2 JP7202814 B2 JP 7202814B2
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Prior art keywords
pressure
target
chamber
film
sputtering
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JP2018163110A
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Japanese (ja)
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JP2020033624A5 (ko
JP2020033624A (ja
Inventor
洋紀 菅原
行生 松本
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Canon Tokki Corp
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Canon Tokki Corp
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Priority to JP2018163110A priority Critical patent/JP7202814B2/ja
Priority to KR1020180157098A priority patent/KR102578738B1/ko
Priority to CN201910709372.4A priority patent/CN110872690A/zh
Publication of JP2020033624A publication Critical patent/JP2020033624A/ja
Publication of JP2020033624A5 publication Critical patent/JP2020033624A5/ja
Application granted granted Critical
Publication of JP7202814B2 publication Critical patent/JP7202814B2/ja
Priority to KR1020230048096A priority patent/KR102632430B1/ko
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3464Sputtering using more than one target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3492Variation of parameters during sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
JP2018163110A 2018-08-31 2018-08-31 成膜装置、成膜方法、および電子デバイスの製造方法 Active JP7202814B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018163110A JP7202814B2 (ja) 2018-08-31 2018-08-31 成膜装置、成膜方法、および電子デバイスの製造方法
KR1020180157098A KR102578738B1 (ko) 2018-08-31 2018-12-07 성막 장치, 성막 방법, 및 전자 디바이스의 제조 방법
CN201910709372.4A CN110872690A (zh) 2018-08-31 2019-08-02 成膜装置、成膜方法及电子器件的制造方法
KR1020230048096A KR102632430B1 (ko) 2018-08-31 2023-04-12 성막 장치, 성막 방법, 및 전자 디바이스의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018163110A JP7202814B2 (ja) 2018-08-31 2018-08-31 成膜装置、成膜方法、および電子デバイスの製造方法

Publications (3)

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JP2020033624A JP2020033624A (ja) 2020-03-05
JP2020033624A5 JP2020033624A5 (ko) 2021-09-30
JP7202814B2 true JP7202814B2 (ja) 2023-01-12

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JP (1) JP7202814B2 (ko)
KR (2) KR102578738B1 (ko)
CN (1) CN110872690A (ko)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017521560A (ja) 2014-07-09 2017-08-03 ソレラス・アドヴァンスト・コーティングス・ビーヴイビーエー 移動ターゲットを有するスパッタ装置

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US6328803B2 (en) * 1997-02-21 2001-12-11 Micron Technology, Inc. Method and apparatus for controlling rate of pressure change in a vacuum process chamber
JPH1161401A (ja) * 1997-08-21 1999-03-05 Matsushita Electric Ind Co Ltd スパッタリング方法及び装置
US9708707B2 (en) * 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
JP2005139549A (ja) 2003-10-15 2005-06-02 Olympus Corp 薄膜形成装置及び薄膜形成方法並びに光学素子
KR20070025382A (ko) * 2005-09-01 2007-03-08 삼성전자주식회사 다수의 압력센서를 구비하는 반도체 화학기상증착 장치
JP2007182617A (ja) * 2006-01-10 2007-07-19 Ulvac Japan Ltd スパッタ成膜方法及び装置
JP5871453B2 (ja) * 2010-05-20 2016-03-01 東京エレクトロン株式会社 プラズマ処理装置,基板保持機構,基板位置ずれ検出方法
EP2437280A1 (en) 2010-09-30 2012-04-04 Applied Materials, Inc. Systems and methods for forming a layer of sputtered material
JP6067300B2 (ja) * 2012-09-28 2017-01-25 住友理工株式会社 マグネトロンスパッタ成膜装置およびマグネトロンスパッタ成膜方法
JP6207319B2 (ja) * 2013-09-25 2017-10-04 日立造船株式会社 真空蒸着装置
JP2018053272A (ja) * 2016-09-26 2018-04-05 株式会社Screenホールディングス 成膜装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017521560A (ja) 2014-07-09 2017-08-03 ソレラス・アドヴァンスト・コーティングス・ビーヴイビーエー 移動ターゲットを有するスパッタ装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
田尻修一 他,スパッタリングプロセスにおける静的圧力分布、および動的圧力変化の実測,J. Vac. Soc. Jpn.,日本,2017年,pp.220-227

Also Published As

Publication number Publication date
KR102578738B1 (ko) 2023-09-13
JP2020033624A (ja) 2020-03-05
CN110872690A (zh) 2020-03-10
KR102632430B1 (ko) 2024-01-31
KR20200025982A (ko) 2020-03-10
KR20230054635A (ko) 2023-04-25

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