JP7202814B2 - 成膜装置、成膜方法、および電子デバイスの製造方法 - Google Patents
成膜装置、成膜方法、および電子デバイスの製造方法 Download PDFInfo
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- JP7202814B2 JP7202814B2 JP2018163110A JP2018163110A JP7202814B2 JP 7202814 B2 JP7202814 B2 JP 7202814B2 JP 2018163110 A JP2018163110 A JP 2018163110A JP 2018163110 A JP2018163110 A JP 2018163110A JP 7202814 B2 JP7202814 B2 JP 7202814B2
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- Prior art keywords
- pressure
- target
- chamber
- film
- sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018163110A JP7202814B2 (ja) | 2018-08-31 | 2018-08-31 | 成膜装置、成膜方法、および電子デバイスの製造方法 |
KR1020180157098A KR102578738B1 (ko) | 2018-08-31 | 2018-12-07 | 성막 장치, 성막 방법, 및 전자 디바이스의 제조 방법 |
CN201910709372.4A CN110872690A (zh) | 2018-08-31 | 2019-08-02 | 成膜装置、成膜方法及电子器件的制造方法 |
KR1020230048096A KR102632430B1 (ko) | 2018-08-31 | 2023-04-12 | 성막 장치, 성막 방법, 및 전자 디바이스의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018163110A JP7202814B2 (ja) | 2018-08-31 | 2018-08-31 | 成膜装置、成膜方法、および電子デバイスの製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2020033624A JP2020033624A (ja) | 2020-03-05 |
JP2020033624A5 JP2020033624A5 (ko) | 2021-09-30 |
JP7202814B2 true JP7202814B2 (ja) | 2023-01-12 |
Family
ID=69667297
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018163110A Active JP7202814B2 (ja) | 2018-08-31 | 2018-08-31 | 成膜装置、成膜方法、および電子デバイスの製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7202814B2 (ko) |
KR (2) | KR102578738B1 (ko) |
CN (1) | CN110872690A (ko) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017521560A (ja) | 2014-07-09 | 2017-08-03 | ソレラス・アドヴァンスト・コーティングス・ビーヴイビーエー | 移動ターゲットを有するスパッタ装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6328803B2 (en) * | 1997-02-21 | 2001-12-11 | Micron Technology, Inc. | Method and apparatus for controlling rate of pressure change in a vacuum process chamber |
JPH1161401A (ja) * | 1997-08-21 | 1999-03-05 | Matsushita Electric Ind Co Ltd | スパッタリング方法及び装置 |
US9708707B2 (en) * | 2001-09-10 | 2017-07-18 | Asm International N.V. | Nanolayer deposition using bias power treatment |
JP2005139549A (ja) | 2003-10-15 | 2005-06-02 | Olympus Corp | 薄膜形成装置及び薄膜形成方法並びに光学素子 |
KR20070025382A (ko) * | 2005-09-01 | 2007-03-08 | 삼성전자주식회사 | 다수의 압력센서를 구비하는 반도체 화학기상증착 장치 |
JP2007182617A (ja) * | 2006-01-10 | 2007-07-19 | Ulvac Japan Ltd | スパッタ成膜方法及び装置 |
JP5871453B2 (ja) * | 2010-05-20 | 2016-03-01 | 東京エレクトロン株式会社 | プラズマ処理装置,基板保持機構,基板位置ずれ検出方法 |
EP2437280A1 (en) | 2010-09-30 | 2012-04-04 | Applied Materials, Inc. | Systems and methods for forming a layer of sputtered material |
JP6067300B2 (ja) * | 2012-09-28 | 2017-01-25 | 住友理工株式会社 | マグネトロンスパッタ成膜装置およびマグネトロンスパッタ成膜方法 |
JP6207319B2 (ja) * | 2013-09-25 | 2017-10-04 | 日立造船株式会社 | 真空蒸着装置 |
JP2018053272A (ja) * | 2016-09-26 | 2018-04-05 | 株式会社Screenホールディングス | 成膜装置 |
-
2018
- 2018-08-31 JP JP2018163110A patent/JP7202814B2/ja active Active
- 2018-12-07 KR KR1020180157098A patent/KR102578738B1/ko active IP Right Grant
-
2019
- 2019-08-02 CN CN201910709372.4A patent/CN110872690A/zh active Pending
-
2023
- 2023-04-12 KR KR1020230048096A patent/KR102632430B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017521560A (ja) | 2014-07-09 | 2017-08-03 | ソレラス・アドヴァンスト・コーティングス・ビーヴイビーエー | 移動ターゲットを有するスパッタ装置 |
Non-Patent Citations (1)
Title |
---|
田尻修一 他,スパッタリングプロセスにおける静的圧力分布、および動的圧力変化の実測,J. Vac. Soc. Jpn.,日本,2017年,pp.220-227 |
Also Published As
Publication number | Publication date |
---|---|
KR102578738B1 (ko) | 2023-09-13 |
JP2020033624A (ja) | 2020-03-05 |
CN110872690A (zh) | 2020-03-10 |
KR102632430B1 (ko) | 2024-01-31 |
KR20200025982A (ko) | 2020-03-10 |
KR20230054635A (ko) | 2023-04-25 |
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