CN110838454A - 晶圆表面检测前处理装置及应用其的晶圆表面检测设备 - Google Patents
晶圆表面检测前处理装置及应用其的晶圆表面检测设备 Download PDFInfo
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Abstract
本发明公开一种晶圆表面检测前处理装置,包含:腔室;支撑构件,设置于所述腔室的内部;雾化器,连接于所述腔室的侧面;冷却构件,连接于所述腔室的底部;以及顶盖,设置于所述腔室的顶部。由此,由于本实施例的晶圆表面检测前处理装置包含所述冷却构件,不需要额外加装抽气装置,便可快速地将所述腔室中剩余的氢氟酸收集于底部,相较于先前技术采用抽气的方式能有效节省成本并有效节省时间。
Description
技术领域
本发明涉及一种晶圆表面检测前处理装置及应用其的晶圆表面检测设备,更特别的是涉及一种用于检测晶圆表面的金属不纯物所使用的晶圆表面检测前处理装置及应用其的晶圆表面检测设备。
背景技术
随着半导体装置于日常生活的普及程度提高以及半导体制程的日益精进,半导体晶圆可容许的金属杂质浓度也越来越低,因而,半导体制程中进行晶圆表面金属杂质分析为不可或缺的检测项目。
一般而言,为通过气相分解(Vapor Phase Decomposition,VPD)技术,先以氢氟酸(Hydrofluoric acid,HF)蚀刻晶圆表面的二氧化硅,待二氧化硅与氢氟酸反应并逸散后,再收集晶圆表面的金属杂质并进行分析。
由于氢氟酸有剧毒,其所释出的氟离子腐蚀力很强,一旦接触、暴露在氢氟酸中可能导致心、肝、肾和神经系统的严重甚至是致命损伤,故一般需于上述检测过程使用的容器加装抽气装置,将未与二氧化硅反应的氢氟酸完全抽离后,才可打开容器对晶圆进行后续检测动作。
然而,加装抽气装置不仅增加成本,等待抽气完成的过程也相当耗时。鉴于此,如何提出一种晶圆表面检测前处理装置,以有效解决前述问题,将是本发明欲积极揭露的地方。
发明内容
本发明的目的在于提出一种用于检测晶圆表面的金属不纯物所使用的晶圆表面检测前处理装置及应用其的晶圆表面检测设备,不需要额外设置抽气设备便能快速收集氢氟酸,能有效解决先前技术由于加装抽气装置而增加成本且耗时的问题。
为达上述目的及其他目的,本发明提出一种晶圆表面检测前处理装置,包含:腔室;支撑构件,设置于所述腔室的内部;雾化器,连接于所述腔室的侧面;冷却构件,连接于所述腔室的底部;以及顶盖,设置于所述腔室的顶部。
于本发明的一实施例中,所述冷却构件为水冷腔体。
于本发明的一实施例中,所述支撑构件由多个支撑柱所组成。
于本发明的一实施例中,所述晶圆表面检测前处理装置的材质为PFA复合塑料。
为达上述目的及其他目的,本发明提出一种晶圆表面检测设备,包含:前述的晶圆表面检测前处理装置;以及检测装置,用于检测经由所述晶圆表面检测前处理装置处理后的晶圆。
借此,由于本实施例的晶圆表面检测前处理装置包含所述冷却构件,不需要额外加装抽气装置,便可快速地将所述腔室中剩余的氢氟酸收集于底部,相较于先前技术采用抽气的方式能有效节省成本并有效节省时间。
附图说明
图1为本发明一实施例的晶圆表面检测前处理装置的示意图。
图2为本发明一实施例的晶圆表面检测前处理装置另一角度的示意图。
图3A~图3C为以氢氟酸对晶圆进行表面处理的各阶段的示意图。
图4为示意本发明一实施例的晶圆表面检测设备的框图。
附图标记:
1 晶圆表面检测设备
100 晶圆表面检测前处理装置
10 腔室
11 可活动侧壁
20 支撑构件
21 支撑柱
30 雾化器
40 冷却构件
50 顶盖
90 晶圆
91 硅基板层
93 二氧化硅层
95 金属不纯物
200 检测装置
具体实施方式
为充分了解本发明,通过下述具体的实施例,并配合所附的附图,对本发明做一详细说明。本领域技术人员可由本说明书所公开的内容了解本发明的目的、特征及功效。须注意的是,本发明可通过其他不同的具体实施例加以施行或应用,本说明书中的各项细节也可基于不同观点与应用,在不悖离本发明的精神下进行各种修饰与变更。另外,本发明所附的附图仅为简单示意说明,并非依实际尺寸的描绘。以下的实施方式将进一步详细说明本发明的相关技术内容,但所公开的内容并非用以限制本发明的权利要求。说明如下:
图1为本发明一实施例的晶圆表面检测前处理装置100的示意图。所述晶圆表面检测前处理装置100为用于检测晶圆表面的金属不纯物的前端作业使用的晶圆表面检测前处理装置。
如图1所示,在本实施例中,所述晶圆表面检测前处理装置100包含腔室10、支撑构件20、雾化器30、冷却构件40以及顶盖50。所述支撑构件20设置于所述腔室10的内部。所述雾化器30连接于所述腔室10的侧面。所述冷却构件40连接于所述腔室10的底部。所述顶盖50设置于所述腔室10的顶部。
所述支撑构件20是用于支撑待检测的晶圆。图2为本发明一实施例的晶圆表面检测前处理装置100另一角度的示意图。如图2所示,所述支撑构件20由多个支撑柱21所组成,所述多个支撑柱21的设计可最小化与晶圆的接触面积,但仍能使晶圆稳固地支撑于其上方。然而,图2所示的支撑构件20仅为本发明的一示例,所述支撑构件20的形式、所述多个支撑柱21的排列与数量并未限制于此实施例。
所述雾化器30是用于将氢氟酸导入所述腔体10内并雾化,使氢氟酸喷洒于待检测的晶圆的表面。
在本实施例中,所述腔室10具有可活动侧壁11,在所述可活动侧壁11如图2所示为开启状态时,可将晶圆放入所述腔室10中,或者将晶圆自所述腔室10取出。但本发明并未限定于此,在某些实施例中,所述顶盖50可活动地设置于所述腔室10的顶部,当所述顶盖50为开启状态时,可将晶圆放入所述腔室10中,或者将晶圆从所述腔室10取出。
图3A~图3C为以氢氟酸对晶圆90进行表面处理的各阶段的示意图。如图3A所示,晶圆90可大致区分为硅基板层91与位于硅基板层91上的二氧化硅层93,晶圆90表面的金属不纯物95位于二氧化硅层93。如图3B所示,将待检测的晶圆90放入晶圆表面检测前处理装置100的腔室10,并置于所述支撑构件20(所述多个支撑柱21)上后,封闭所述腔室10,并通过所述雾化器30将氢氟酸导入所述腔体10内并将雾化的氢氟酸喷洒于晶圆90的表面。如图3C所示,氢氟酸可与二氧化硅层93产生反应并生成SiF4与水(SiO2+4HF→SiF4↑+2H2O),SiF4逸散于空气中并留下金属不纯物95与水于硅基板层91上。
图3B、图3C的步骤即为气相分解(Vapor Phase Decomposition,VPD)技术。接着,可选择地烘干晶圆90(即去除硅基板层91上的水),并于后续步骤中通过例如扫描液等收集并检测硅基板层91上的金属不纯物95,以达成晶圆表面的金属杂质分析。收集并检测金属不纯物的方式并未限定于前述采用扫描液的方式,在此不多加赘述。
同时参照图1、图2,在一实施例中,所述冷却构件40为水冷腔体,通过水冷系统将所述冷却构件40降温,可使所述腔体10的底部维持在约10℃。由于氢氟酸的沸点约为19.54℃,通过所述雾化器30导入所述腔体10内氢氟酸蒸气接触所述腔体10的底部后会被凝结为液态氢氟酸并保留于所述腔体10的底部,使接近所述腔体10底部的空间的氢氟酸蒸气密度降低。未接触二氧化硅层93或者未与二氧化硅层93产生反应的氢氟酸,会朝向密度较低的底部的空间移动,再由于底部的低温被凝结为液态氢氟酸。
要注意的是,所述冷却构件40采用的冷却方式以及设定的温度可视实际需求而定,并未限制于上述实施方式。
在一实施例中,所述晶圆表面检测前处理装置100的材质为PFA复合塑料,其耐化学性好,不易被氢氟酸蒸气或液态氢氟酸腐蚀。但本发明并未限定于此,其他合适的材料也可作为制造晶圆表面检测前处理装置100的主要材料。
由于本实施例的晶圆表面检测前处理装置100包含所述冷却构件40,不需要额外加装抽气装置,便可将所述腔室10中剩余的氢氟酸收集于底部,能有效节省成本。此外,氢氟酸蒸气被凝结于所述腔室10底部的时间(约1分钟)相较于先前技术采用抽气的方式所花费的时间更短,因此能有效节省时间。待前述步骤完成后,便可开启所述可活动侧壁11(或所述顶盖50)取出晶圆或于所述腔室中直接进行后续检测步骤。
再者,将氢氟酸蒸气凝结为液态氢氟酸并保留于所述腔体10的底部,具有方便移出、免清洁等优势。
承上述说明,由于本发明实施例的晶圆表面检测前处理装置100包含所述冷却构件40,不需要额外加装抽气装置,便可快速地将所述腔室10中剩余的氢氟酸收集于底部,相较于先前技术采用抽气的方式能有效节省成本并有效节省时间。
图4为示意本发明一实施例的晶圆表面检测设备1的框图。在本实施例中,所述晶圆表面检测设备1包含前述各实施例的晶圆表面检测前处理装置100以及检测装置200。所述检测装置200可对经由所述晶圆表面检测前处理装置100进行处理后的晶圆(90)进行检测。
举例来说,进行处理后的晶圆(90)可被移至所述检测装置200,所述检测装置200提供扫描液于晶圆(90)的表面,可收集位于晶圆(90)表面上的金属不纯物(95)并进行检测,以分析晶圆表面的金属杂质。或者,晶圆(90)也可被保留于所述支撑构件20(所述多个支撑柱21)上,仅开启所述可活动侧壁11(或所述顶盖50)供所述检测装置200深入所述腔室10对经由所述晶圆表面检测前处理装置100进行处理后的晶圆(90)进行检测。
所述检测装置200的形式、所包含的元件以及其操作方式并未限定于前述内容,可视实际需求进行调整。
本发明在上文中已以较佳实施例揭露,然而本领域技术人员应理解的是,所述实施例仅用于描绘本发明,而不应解读为限制本发明的范围。应注意的是,凡是与所述实施例等效的变化与置换,均应设定为涵盖在本发明的范围内。因此,本发明的保护范围当以权利要求所界定的内容为准。
Claims (5)
1.一种晶圆表面检测前处理装置,其特征在于,所述晶圆表面检测前处理装置包含:
腔室;
支撑构件,设置于所述腔室的内部;
雾化器,连接于所述腔室的侧面;
冷却构件,连接于所述腔室的底部;以及
顶盖,设置于所述腔室的顶部。
2.根据权利要求1所述的晶圆表面检测前处理装置,其特征在于,所述冷却构件为水冷腔体。
3.根据权利要求1所述的晶圆表面检测前处理装置,其特征在于,所述支撑构件由多个支撑柱组成。
4.根据权利要求1所述的晶圆表面检测前处理装置,其特征在于,所述晶圆表面检测前处理装置的材质为PFA复合塑料。
5.一种晶圆表面检测设备,其特征在于,所述晶圆表面检测设备包含:
根据权利要求1~4中任一项所述的晶圆表面检测前处理装置;以及
检测装置,用于检测经由所述晶圆表面检测前处理装置处理后的晶圆。
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