CN110783204B - 一种双沟道立体tft器件、显示面板及其制造方法 - Google Patents

一种双沟道立体tft器件、显示面板及其制造方法 Download PDF

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CN110783204B
CN110783204B CN201911037714.9A CN201911037714A CN110783204B CN 110783204 B CN110783204 B CN 110783204B CN 201911037714 A CN201911037714 A CN 201911037714A CN 110783204 B CN110783204 B CN 110783204B
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channel
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易志根
潘明超
殷大山
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Nanjing CEC Panda FPD Technology Co Ltd
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南京京东方显示技术有限公司
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Abstract

本发明提供一种双沟道立体TFT器件、显示面板及其制造方法，所述双沟道立体TFT器件的制造方法，包括如下步骤：S1：在基板上沉积第一金属层并形成图形化的数据线；S2：在步骤S1的基础上首先沉积覆盖数据线的缓冲层，然后沉积位于缓冲层上的第二金属层；S3：在步骤S2的基础上对第二金属层和缓冲层进行曝光、刻蚀和剥离，第二金属层形成与数据线具有夹角的漏极，缓冲层被刻蚀掉包裹数据线的部分且缓冲层两端被刻蚀后形成斜面；S4：在步骤S3的基础上形成由金属氧化物形成的图案化的半导体层；S5：在步骤S4的基础上先沉积栅极绝缘层，然后再形成图案化的扫描线。本发明能显著提高TFT器件的宽长比，从而提高显示器件的开口率,同时工艺较为简单。

Description

一种双沟道立体TFT器件、显示面板及其制造方法
技术领域
本发明涉及显示面板的技术领域，尤其涉及一种双沟道立体TFT器件、显示面板及其制造方法。
背景技术
显示面板通过TFT器件使得电流进入显示面板内，TFT器件具有两种形式的，一种为栅极位于下方的底栅结构的TFT器件，另一种为栅极位于上方的顶栅结构的TFT器件。如图1和图2所示，TFT器件包括位于底部或顶部的栅极10、与栅极10重叠设置的半导体层20、位于栅极和半导体层20之间的绝缘层30、均与半导体层20接触的源极41和漏极42，对于顶栅结构的TFT器件，还设有位于顶部的金属遮光层50和位于金属遮光层50和半导体层20之间的第二绝缘层60。
不论是底栅结构的TFT器件，还是顶栅结构的TFT器件，TFT器件的宽长比越大，通过的电流越大，因此较高的宽长比的TFT器件可以做的更小，可以显著提高显示产品的开口率。目前TFT器件的宽长比受制于曝光精度,运用于显示产品的中的TFT器件的沟道长W通常在2um以上，所以TFT器件的宽长比比较大。
发明内容
本发明的目的在于提供一种能提高TFT器件的宽长比且提高开口率的双沟道立体TFT器件、显示面板及其制造方法。
本发明提供一种双沟道立体TFT器件的制造方法，包括如下步骤：
S1：在基板上沉积第一金属层并形成图形化的数据线；
S2：在步骤S1的基础上首先沉积覆盖数据线的缓冲层，然后沉积位于缓冲层上的第二金属层；
S3：在步骤S2的基础上对第二金属层和缓冲层进行曝光、刻蚀和剥离，第二金属层形成与数据线具有夹角的漏极，缓冲层被刻蚀掉包裹数据线的部分且缓冲层两端被刻蚀后形成斜面；
S4：在步骤S3的基础上形成由金属氧化物形成的图案化的半导体层；
S5：在步骤S4的基础上先沉积栅极绝缘层，然后再形成图案化的扫描线。
优选地，步骤S3中，漏极包括呈斜线状的第一部分和与第一部分连接的第二部分，其中，漏极的第一部分在数据线上的投影与数据线之间具有夹角；第二部分在数据线上的投影位于数据线的下方。
优选地，步骤S4中，所述半导体层分别在缓冲层两端的斜面处形成第一沟道和第二沟道，第一沟道为半导体层与漏极一侧接触处，第二沟道为半导体层与漏极另一侧接触处。
优选地，步骤S3包括如下具体步骤：
S31：在步骤S2的基础上涂布第一光阻层，第一光阻层在数据线上的投影与数据线之间具有夹角；
S32：对第一光阻层进行灰化处理，使得第一光阻层的宽度缩小；
S33：通过对第二金属层和缓冲层进行曝光、刻蚀和剥离，第二金属层形成与数据线具有夹角的漏极，缓冲层被刻蚀掉包裹数据线的部分且缓冲层两端被刻蚀后形成斜面。
优选地，步骤S31中，第一光阻层包括呈斜线状的第一部分和与第一部分连接的第二部分，第一部分在数据线上的投影与数据线之间具有夹角，第二部分在数据线上的投影位于数据线的下方。
本发明还提供一种显示面板，包括如下步骤：
S1：在基板上沉积第一金属层并形成图形化的数据线；
S2：在步骤S1的基础上首先沉积覆盖数据线的缓冲层，然后沉积位于缓冲层上的第二金属层；
S3：在步骤S2的基础上对第二金属层和缓冲层进行曝光、刻蚀和剥离，第二金属层形成与数据线具有夹角的漏极，缓冲层被刻蚀掉包裹数据线的部分且缓冲层两端被刻蚀后形成斜面；
S4：在步骤S3的基础上形成由金属氧化物形成的图案化的半导体层；
S5：在步骤S4的基础上先沉积栅极绝缘层，然后再形成图案化的扫描线。
S6：在步骤S5的基础上先依序第一绝缘层和有机绝缘层，然后在漏极开设接触孔；
S7：在步骤S6的基础上形成图形化的像素电极，像素电极通过接触孔与漏极连接。
本发明还提供一种双沟道立体TFT器件，包括位于底层的源极、位于源极上方且相对设置的第一沟道和第二沟道、位于第一沟道和第二沟道上方的漏极以及位于漏极上的栅极，其中，漏极包括呈斜线状的第一部分和与第一部分连接的第二部分，所述第一部分在源极上的投影与源极之间具有夹角，第一沟道和第二沟道分别位于第一部分的两侧；第二部分在源极上的投影位于源极的下方。
优选地，还包括位于源极和漏极之间的缓冲层，第一沟道和第二沟道分别位于缓冲层两端的斜面上。
优选地，所述夹角为45度。
本发明还包括一种显示面板，包括所述的双沟道立体TFT器件。
本发明提供一种新型的双沟道立体TFT器件，能显著提高TFT器件的宽长比，从而提高显示器件的开口率,同时工艺较为简单。
附图说明
图1为现有底栅结构的TFT器件的结构示意图；
图2为现有顶栅结构的TFT器件的结构示意图；
图3为本发明显示面板的制造步骤之一的截面图；
图4为本发明显示面板的制造步骤之二的截面图；
图5(a)为本发明显示面板的制造步骤之三的截面图；
图5(b)为本发明显示面板的制造步骤之三的俯视图；
图6(a)为本发明显示面板的制造步骤之四的截面图；
图6(b)为本发明显示面板的制造步骤之四的俯视图；
图7(a)为本发明显示面板的制造步骤之五的截面图；
图7(b)为本发明显示面板的制造步骤之五的俯视图；
图8(a)为本发明显示面板的制造步骤之六的截面图；
图8(b)为本发明显示面板的制造步骤之六的俯视图；
图9(a)为本发明显示面板的制造步骤之七的截面图；
图9(b)为本发明显示面板的制造步骤之七的俯视图；
图10(a)为本发明显示面板的制造步骤之三的具体步骤之一截面图；
图10(b)为本发明显示面板的制造步骤之三的具体步骤之一截面图；
图11(a)为本发明显示面板的制造步骤之三的具体步骤之二截面图；
图11(b)为本发明显示面板的制造步骤之三的具体步骤之二截面图。
具体实施方式
下面结合附图和具体实施例，进一步阐明本发明，应理解这些实施例仅用于说明本发明而不用于限制本发明的范围，在阅读了本发明之后，本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。
为使图面简洁，各图中只示意性地表示出了与本发明相关的部分，它们并不代表其作为产品的实际结构。另外，以使图面简洁便于理解，在有些图中具有相同结构或功能的部件，仅示意性地绘示了其中的一个，或仅标出了其中的一个。在本文中，“一个”不仅表示“仅此一个”，也可以表示“多于一个”的情形。
本发明提供一种双沟道立体TFT器件的制造方法，包括如下步骤：
S1：如图3所示，在基板10上沉积第一金属层并形成图形化的数据线20(数据线20同时充当源极)；
S2：如图4所示，在步骤S1的基础上首先沉积覆盖数据线20的缓冲层30，然后沉积位于缓冲层30上的第二金属层40；
其中，第二金属层40为Ti或Mo等可以进行干刻的金属。
S3：如图5(a)和图5(b)所示，在步骤S2的基础上对第二金属层40和缓冲层30进行曝光、刻蚀和剥离，第二金属层40形成与数据线20具有夹角的漏极401，缓冲层30被刻蚀掉包裹数据线20的部分且缓冲层30两端被刻蚀后形成斜面；
其中，漏极401包括呈斜线状的第一部分41和与第一部分41连接的第二部分42，其中，漏极401的第一部分41在数据线20上的投影与数据线20之间具有夹角，可以减少漏极401与数据线20之间的接触面积，减少寄生电容，同时保证TFT器件有足够的宽度比；第二部分42在数据线20上的投影位于数据线20的下方。
其中，步骤S3包括如下具体步骤：
S31：如图10(a)至图10(b)所示，在步骤S2的基础上涂布第一光阻层100，第一光阻层100在数据线20上的投影与数据线20之间具有夹角；
其中，第一光阻层100包括呈斜线状的第一部分101和与第一部分连接的第二部分102，第一部分101在数据线20上的投影与数据线20之间具有夹角，第二部分102在数据线20上的投影位于数据线20的下方。
S32：如图11(a)和图11(b)所示，对第一光阻层100进行灰化处理，使得第一光阻层100的宽度缩小；
其中，通过对第一光阻层100进行灰化处理，使得第一光阻层100的第一部分101和与第一部分连接的第二部分102的宽度缩小。
第一光阻层100进行灰化，目的为减少漏极401的线宽，减少漏极401分别与数据线20和扫描线70之间的寄生电容。
S33：如图5(a)和图5(b)所示，通过对第二金属层40和缓冲层30进行曝光、刻蚀和剥离，第二金属层40形成与数据线20具有夹角的漏极401，缓冲层30被刻蚀掉包裹数据线20的部分且缓冲层30两端被刻蚀后形成斜面。
S4：如图6(a)和图6(b)所示，在步骤S3的基础上形成由金属氧化物形成的图案化的半导体层50；
其中，半导体层50覆盖在部分漏极401的第一部分41和部分数据线20上。
在优选的实施例中，漏极401的第一部分41在数据线20上的投影与数据线20之间的夹角为45°，漏极401的第一部分41在半导体层50上的投影位于半导体层50的对角处。
S5：如图7(a)和图7(b)所示，在步骤S4的基础上先沉积栅极绝缘层60，然后再形成图案化的扫描线70(扫描线70同时充当栅极)；
其中，缓冲层30两端被刻蚀后形成斜面(图未示)，半导体层50分别在缓冲层30两端的斜面处形成第一沟道001和第二沟道002，第一沟道001为半导体层50与漏极401一侧接触处，第二沟道002为半导体层50与漏极401另一侧接触处，第一沟道001的长度和第二沟道002的长度分别为缓冲层30两端的斜面的长度，故第一沟道001的长度和第二沟道002的长度可以做到1um以下，同时缓冲层30的两端的斜面均为TFT器件的沟道。
由于TFT器件包括栅极(由扫描线70充当)、源极(由数据线20充当)、漏极401以及分别位于漏极401两端的第一沟道001和第二沟道002，其中第一沟道001和第二沟道002分别与源极和漏极401接触，又由于源极、漏极401、第一沟道001和第二沟道002不在同一个平面内，第一沟道001和第二沟道002位于竖直方向上，即相当于将普通TFT器件旋转了90°，故本发明的TFT器件为双沟道立体TFT器件，其与相较于常规的单沟道TFT器件，宽长比能提升一倍；较小的TFT沟道长加上双沟道设计，因此TFT器件能有较大宽长比，能显著提高显示面板件的开口率。
本发明还提供一种显示面板，其包括如下步骤：在形成双沟道立体TFT器件的基础上，还包括如下步骤：
S6：如图8(a)和图8(b)所示，在步骤S5的基础上先依序第一绝缘层80和有机绝缘层90，然后在漏极401开设接触孔91；
其中，接触孔91位于漏极401的第二部分42上。
通过步骤S6形成TFT器件，TFT器件为3D TFT器件，其半导体层不在一个平面上，而是在竖直方向。TFT器件的长度由缓冲层30的Taper处的长度进行控制，可以做到小于1um的TFT器件的沟长，因此TFT器件有较大的宽长比，能显著提高显示器件的开口率。
S7：如图9(a)和图9(b)所示，在步骤S6的基础上形成图形化的像素电极100，像素电极100通过接触孔91与漏极401连接。
本发明还提供一种双沟道立体TFT器件，其包括双沟道立体TFT，双沟道立体TFT包括位于底层的源极(由数据线20充电)、位于源极上方且相对设置的第一沟道001和第二沟道002、位于第一沟道001和第二沟道002上方的漏极401以及位于漏极401上的栅极(由扫描线70充当)，其中，漏极401包括呈斜线状的第一部分41和与第一部分41连接的第二部分42，其中，漏极401的第一部分41在源极上的投影与源极之间具有夹角，第一沟道001和第二沟道002分别位于第一部分41的两侧；第二部分42在源极上的投影位于源极的下方。
其中，双沟道立体TFT器件还包括位于数据线20和漏极401之间的缓冲层30，第一沟道001和第二沟道002分别位于缓冲层30两端的斜面上。
本发明还提供一种显示面板，其包括双沟道立体TFT器件。
本发明提供一种新型的双沟道立体TFT器件，能显著提高TFT器件的宽长比，从而提高显示器件的开口率,同时工艺较为简单。
以上详细描述了本发明的优选实施方式，但是本发明并不限于上述实施方式中的具体细节，在本发明的技术构思范围内，可以对本发明的技术方案进行多种等同变换(如数量、形状、位置等)，这些等同变换均属于本发明的保护范围。

Claims (10)

1.一种双沟道立体TFT器件的制造方法，其特征在于，包括如下步骤：
S1：在基板上沉积第一金属层并形成图形化的数据线；
S2：在步骤S1的基础上首先沉积覆盖数据线的缓冲层，然后沉积位于缓冲层上的第二金属层；
S3：在步骤S2的基础上对第二金属层和缓冲层进行曝光、刻蚀和剥离，第二金属层形成与数据线具有夹角的漏极，缓冲层被刻蚀掉包裹数据线的部分且缓冲层两端被刻蚀后形成斜面；
S4：在步骤S3的基础上形成由金属氧化物形成的图案化的半导体层；
S5：在步骤S4的基础上先沉积栅极绝缘层，然后再形成图案化的扫描线。
2.根据权利要求1所述的双沟道立体TFT器件的制造方法，其特征在于，步骤S3中，漏极包括呈斜线状的第一部分和与第一部分连接的第二部分，其中，漏极的第一部分在数据线上的投影与数据线之间具有夹角；第二部分在数据线上的投影位于数据线的下方。
3.根据权利要求1所述的双沟道立体TFT器件的制造方法，其特征在于，步骤S4中，所述半导体层分别在缓冲层两端的斜面处形成第一沟道和第二沟道，第一沟道为半导体层与漏极一侧接触处，第二沟道为半导体层与漏极另一侧接触处。
4.根据权利要求1所述的双沟道立体TFT器件的制造方法，其特征在于，步骤S3包括如下具体步骤：
S31：在步骤S2的基础上涂布第一光阻层，第一光阻层在数据线上的投影与数据线之间具有夹角；
S32：对第一光阻层进行灰化处理，使得第一光阻层的宽度缩小；
S33：通过对第二金属层和缓冲层进行曝光、刻蚀和剥离，第二金属层形成与数据线具有夹角的漏极，缓冲层被刻蚀掉包裹数据线的部分且缓冲层两端被刻蚀后形成斜面。
5.根据权利要求4所述的双沟道立体TFT器件的制造方法，其特征在于，步骤S31中，第一光阻层包括呈斜线状的第一部分和与第一部分连接的第二部分，第一部分在数据线上的投影与数据线之间具有夹角，第二部分在数据线上的投影位于数据线的下方。
6.一种显示面板的制造方法，其特征在于，在权利要求1-5任一所述的双沟道立体TFT器件的制造方法的基础上，还包括如下步骤：
S6：在步骤S5的基础上先依序沉积第一绝缘层和有机绝缘层，然后在漏极开设接触孔；
S7：在步骤S6的基础上形成图形化的像素电极，像素电极通过接触孔与漏极连接。
7.一种双沟道立体TFT器件，其特征在于，包括位于底层的源极、位于源极上方且相对设置的第一沟道和第二沟道、位于第一沟道和第二沟道上方的漏极以及位于漏极上的栅极，其中，漏极包括呈斜线状的第一部分和与第一部分连接的第二部分，所述第一部分在源极上的投影与源极之间具有夹角，第一沟道和第二沟道分别位于第一部分的两侧；第二部分在源极上的投影位于源极的下方。
8.根据权利要求7所述的双沟道立体TFT器件，其特征在于，还包括位于源极和漏极之间的缓冲层，第一沟道和第二沟道分别位于缓冲层两端的斜面上。
9.根据权利要求7所述的双沟道立体TFT器件，其特征在于，所述夹角为45度。
10.一种显示面板，其特征在于，包括权利要求7-9任一所述的双沟道立体TFT器件。
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