CN1106748A - 喷墨记录设备及其驱动方法 - Google Patents

喷墨记录设备及其驱动方法 Download PDF

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CN1106748A
CN1106748A CN94107506A CN94107506A CN1106748A CN 1106748 A CN1106748 A CN 1106748A CN 94107506 A CN94107506 A CN 94107506A CN 94107506 A CN94107506 A CN 94107506A CN 1106748 A CN1106748 A CN 1106748A
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electrode
ink
substrate
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nozzle
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藤井正宽
宫小育宏
小枝周史
杉村繁夫
N·小林
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Seiko Epson Corp
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Abstract

一种喷墨记录设备,包括一个喷墨头,具有成型 于半导体基片(1)中的至少一个喷嘴(4),一个连接到 喷嘴的供墨通道(6,7),和邻接供墨通道的薄膜(5), 还具有静电致动装置,用以驱动薄膜,致使墨水滴随 着膜的运动而从喷嘴中喷射,所述静电致动装置包括 附连到该基片的第一电极(17),所述膜(5)和与其间 隔一间隙(G)相对设置的第二电极(21),以及驱动电 路装置(102),用于选择性地提供所述第一和第二电 极(17,21)之间的驱动电压。

Description

本发明涉及这样一种喷墨记录设备,即其具有称之为按需墨水(ink-on-demand)型喷墨头,仅当各墨水滴真正要记录在记录媒质上时,该喷墨头才喷射墨水滴。更具体地说,本发明涉及一种具有用静电驱动的喷墨头的喷墨记录设备,本发明还涉及驱动该喷墨记录设备的方法。
当前使用的主要有两种按需水墨型喷墨头,其产生喷墨所需压力的方式不同。一种如(例如)DE-A-3147107和EP-A-0337429中所提示那样,为此目的采用了压电式致动器,而另一种如在JP-B-59911/1986中所述那样,采用了加热元件以加热墨水,致使其产生气泡。这两种喷墨头各有其自己的优点和缺点。前一种类型虽然享有高可靠性和长使用寿命的优点但在要求某种喷嘴密度和精度时在制造过程中会迂到一些问题。另一方面,气泡型喷墨头虽几乎不存在制造方面问题,但其电阻性加热元件往往会由于反复快速加热和冷却以及由破裂气泡产生的碰撞而逐渐损伤,致使该喷墨头的实际使用寿命较短。因此,这两种喷墨头没有一种能完全真正令人满意。
第三种在喷墨头中产生压力的书籍原理是利用静电力,即,运用如在日本专利申请289351/1990和USP4520375中所揭示的静电致动器。
更具体地说,日本专利申请289351/1990所提示的喷墨头包括一块硅基片,其内成形有墨水通道,这些通道每一个的一端连到各自喷嘴而另一端连到一个公共墨水库。墨水通道的一个侧壁部分由一块作为振动板的膜片构成。一个各自单独的即喷嘴电极设置在每个膜板的外侧面。通过一间隙与喷嘴电极相对设置的是一个公共电极。带有其喷嘴电极和相对的公共电极的各膜板构成一个静电致动器,该致动器包括由喷嘴电极公共电极和其间的一个绝缘体形的一个电容器。USP4520375公开了一种类似的静电致动器或称流体喷射器(fluid jet ejector)。在后一篇先有技术文献中,利用其半导体性能,该硅薄膜本身形成了电容器的一个电极。对该电容器施加一个随时间变化的电压,使得薄膜开始机械运动同时流体根据薄膜运动而排出。
在该先有技术中所利用的这种静电原理提供了诸如紧凑性,高密度,使用寿命长之类的优点,因而似乎是一个有希望借助它可解决采用压电致动器或加热元件的先有技术中的上述种种问题的可供选择的方案。
然而,现在还不可能实现采用这种供压力产生用,以高质量印刷和恒定高效为特征的静电致动器的按需墨水型喷墨头。对这种至少部分使用半导体材料包含振动膜的喷墨头,允许采用众所周知的半导体工艺技术就能以高精度制造出复杂的结构。因此能满足在相对低制造成本下获得高喷嘴密度的要求。另一方面,由于材料的半导体性能又引发了一些问题,因为它难以确保稳定的驱动特性。
因此,本发明的一个目的是提供一种具有利用静电力驱动的喷墨头的喷墨记录设备,其中该喷墨头能易于并精确地制造而且确保了稳定供墨和良好的打印质量。本发明的另一目的是提供一种稳定驱动该喷墨记录设备的方法。
本发明的目的是采用如下记录设备和驱动方法而达到的,该记录设备包括一个喷墨头,具有成形于P型或n-型半导体基片(1)中的至少一个喷嘴(4),一个连接到喷嘴的供墨通道(6,7),和邻接供墨通道的薄膜(5),还具有静电致动装置,用以驱动薄膜,致使墨水滴随着膜的运动而从喷嘴中喷射出来,所述静电致动装置包括附连到该基片的第一电极(17),所述膜(5)和与所述膜间隔一间隙(G)相对设置的第二电极(21),以及驱动电路装置(102),用于选择性地提供所述第一和第二电极(17,21)之间的驱动电压,其中所述驱动电压的极性是如此选择的,以致在P-型基片情况下使所述第一电极相对于第二电极为正电位,而在n型基片情况下使所述第一电极相对于第二电极为负。驱动该设备的方法是墨水滴是通过在一预定周期内对所述静电致动器进行充电然后又在预定周期内对其进行放电而被喷射的。
按照本发明记录设备的喷墨头包括:由一种P型或n型掺杂半导体材料构成的基片,其内形成一个或多个喷嘴,用以喷射墨水滴;一个连接到每个喷嘴的墨水盒以及供墨通道的成形部分,用以将墨水供给每个喷嘴。每个墨水盒的至少一个壁是由一薄膜同半导体基片整体构成。一个单独的喷嘴电极与每个薄膜相对地并其间以一间隙隔开安置,而一公共电极形成于基片上。薄膜与相应的喷嘴电极构成一电容器,该电容由于薄膜的挠性而充当一个静电致动器。电容器充电时静电力将使薄膜偏向喷嘴电极。电容器放电时,薄膜将由于其弹性而回到其起始状态。
在喷墨头的这种结构下,当将电压施加到公共电极和喷嘴电极时,可以观看到薄膜由此引起的偏转将随电压极性不同而不同。这是由在喷嘴电极和薄膜之间形成的金属-绝缘体-半导体结构。造成的在该半导体中沿着半导体层与绝缘层之间的边界部分产生空间电荷层(也叫“耗尽”层)。空间电荷层有一定的电容量,该电容量与由薄膜和喷嘴电极形成的电容器串联连接。视乎空间电荷层的该电容量,施加在公共电极和喷嘴电极间的较小或较大比例电压将有效地用于建立导致薄膜位移的静电场。
按照本发明对施加于公共电极和喷嘴电极之间的电压极性是根据半导体材料的种类使其显著抑制空间电荷层的影响而选择的。在用P型半导体基片时,这是通过使电压极性令公共电极电位相对于喷嘴电极电位为正而达到的。在n型基片情况下,电压极性相反。
在按本发明的喷墨记录设备中,一个脉冲电压加在公共电极与喷嘴电极之间,用于对静电致动器进行充电,即,用以产生引起薄膜于位于薄膜对面的喷嘴电极之间吸引和偏转薄的静电力。然后通过静电致动器的放电。即通过取消该静电力,则由于薄膜的恢复力而使墨水盒内部压力增大,于是使墨水从喷嘴喷出。通过根据用作基片的半导体的导电性类型选择施加到公共电极和喷嘴电极的脉冲电压的极性,以及通过对上述的静电致动器充电和放电,去控制薄膜响应一个极窄范围内所加电压而偏转是可能的,因此可能消除薄膜位移缺陷和偏差,稳定墨水喷射速度和喷射量,并获得极高质量的打印。由于薄膜的稳定驱动也提高了薄膜的有效使用寿命并改善了喷墨可靠性。
图1是本发明一个最佳实施例喷墨头的部分部件分解透视图;
图2是图1所示喷墨头的侧面剖视图;
图3是沿图2中A-A线所取的截面视图;
图4是表示施加了极性根据本发明选择的电压时,薄和喷嘴电极上电荷分布的示意图;
图5是表示驱动电压极性与图4中所用极性相反时,薄膜与喷嘴电极的电荷分布示意图;
图6是根据本发明的一个驱动电路的示意图;
图7是驱动时序图;
图8表示静电充电期间喷墨头的状态;
图9表示静电放电期间喷墨头的状态,和
图10是体现本发明喷墨记录设备的概念性示意图;
下面参照诸附图描述本发明的最佳实施例。
图1是喷墨头的一个最佳实施例的部分部件分解透视图和横截面图。注意,虽然本实施例示作边缘型喷墨头,其中墨水是从设置在基片边缘的喷嘴喷出,但本发明还可应用于面型头;其中墨水是从设置在基片边沿的喷嘴喷出,但本发明还可应用于面型头;其中墨水是从设置在基片顶表面上的喷嘴喷出。图2是一个组装后喷墨头的侧面剖面,图3是从图2中A-A线所取的截面视图。本实施例的喷墨头10是由三个基片1,2,3互相叠合而成并具有如下面所详述的结构。
第一基片1夹在第二和第三基片2和3之间,并由硅薄片制成。多个喷嘴4通过设置在第一基片1的顶表面,大致以与该基片一边相等的间隔平行延伸的相应喷嘴槽11形成于第一和第三基片之间。与所述一边缘相对的每个喷嘴槽的末端通向各自凹口时2。各凹口12本身又通过各自的窄槽13连到凹槽14。组装状态下的凹槽14构成一个通过由窄槽13形成的小孔7连通的公共墨水腔8,和墨水盒6由凹口12同喷嘴4构成。静电致动器形成在第一和第二基片之间。每个墨水盒6的底部是一个与基片1整体形成的膜5。正如将会理解的,以上涉及的槽和凹口可容易地和精确地通过对半导体基片的光刻术来形成。
公共电极17设置在第一基片1上。形成第一基片1的半导体的功函数大小以及用于公共电极17的金属是确定第一基片1上电极17的作用的重要因素。用于本实施例中的半导体材料具有8-12Ωcm的电阻率,而公共电极17实际上有铂同钛衬底或金同铬衬底构成的双层结构。图4和5中,17a表示上层(铂或金),17b表示下层(钛或铬),设置后者主要为改善基片与电极之间的连接强度。然而,本发明并不限于此,而是可根据半导体和电极材料的特性使用其他不同材料的组合。
硼硅玻璃用于将第二基片2粘接到第一基片1的底表面。喷嘴电极21通过以一种基本上与薄膜5的形状相配的图形将金溅射到第二基片2的表面至0.1μm厚而形成。每个喷嘴电极21包括引线部件22和端接部件23。一层0.2μm厚的绝缘层24是由溅射在第二基片2上的硼硅酸玻璃薄膜形成,用以避免喷墨头驱动期间电介质击穿和短路,但该薄膜并不覆盖端接部件23。此外,作为对绝缘层24的一种可选方案是可在面对喷嘴电极的薄膜5的侧面上设置一绝缘层。由于薄膜5由半导体材料组成,故这类绝缘层(图中未示出)可易于通过氧化该半导体材料来形成。这种氧化物绝缘层呈现极佳的机械强度,绝缘性能和化学稳定性并在薄膜与喷嘴电极之间接触情况下也大大降低了电介质击穿的可能性。这是采用半导体材料本身作为静电致动器的一个电极的优点。
为容纳各喷嘴电极21的凹口15设置在每个薄膜5的下面。将第二基片2粘接到第一基片1时,导致在各薄膜5和与其相对的相应喷嘴电极21之间的凹口15位置上形成振动腔9。在本实施例中,形成在第一基片1的底表面上的凹口15提供了薄膜与各电极21之间的间隙。每个间隙长度G(见图2;此后称“间隙长度”)等于凹口15的深度与电极21的厚度之差。要指出的是:这个凹口也可形成在第二基片2的顶表面上。在本实施例中,凹口15的深度为0.6μm,喷嘴槽11的间距和宽度分别为0.72mm和70μm。
正如第二基片2的情况一样,硼硅酸盐玻璃将第三基片3粘接到第一基片1的顶表面。第三基片3粘连到第一基片1完成了喷嘴4,墨水盒6,小孔7和墨水腔8的成形。供墨口31形成于第三基片3上以便导入墨水腔8。供墨口1用连接管32和管子33连接到墨水箱(图中未示)。
第一基片1和第二基片2是在300℃条件下,通过施加500V电压用阳极法(anodically)粘接,而第一基片1和第三基片3在同样的条件下被粘接,以便如图2所示那样组装喷墨头。在本实施例中,粘接好这些基片以后,薄膜5和喷嘴电极21之间的间隙长度G为0.5μm。薄膜5和覆盖喷嘴电极21的绝缘层24之间的间隙G1为0.3μm。
如此组装好的喷墨头通过经导线101连接到公共电极17和喷嘴电极21的端接部件23的驱动电路102驱动。来自墨水箱(图中未示出)的墨水103通过供墨口31进入第一基片1,以灌满墨水腔8和墨水盒6。
图2中还示出了在喷墨头驱动期间从喷嘴4喷出的墨水滴104,和记录纸105。
下面描述本实施例的电气连接。
人们已知:对于一个金属-绝缘体-半导体结构来说,由于空间电荷层(也称为“耗尽层”)效应,在取决于施加电压极性的电流值方面可以有很大区别。当用作基片的半导体是P型硅时,则当相对于喷嘴电极21的正电压加到公共电极17时,该基片充当一个导体,但当施加负电位时,基片不起导体作用而是产生了空间电荷层。以下参照图4-10描述定特点在本发明中的应用。
图4是表示当按本发明选择施加电压的极性时,在薄膜和喷嘴电极上电荷的分布示意图。在本实施例中,将P型硅用作第一基片1,同时将第一基片1(薄膜5),即,公共电极17连到驱动电路102,以使其加上正电位,同时将喷嘴电极21连到驱动电路102,以使其加上正电位。通过驱动电路102将脉冲电压加到公共电极17和喷嘴电极21。该P型硅以诸如硼之类的受主杂质掺杂,”具有与受主原子数,即掺杂量相等的空穴。公共电极17的正电位抵制P-型硅中的空穴19移向绝缘层26。由于空穴是从公共电极17流入到受主原子(离子化硼)的,故空穴运动不会形成第一基片中的空间电荷层,代之以第一基片1中产生的空穴电流,因此起到个一导体的作用。此外,负电荷累积在喷嘴电极21侧。结果施加在薄膜5和与其相对的喷嘴电极21之间的脉冲电压由于静电力产的生吸力,足以偏转薄膜5。于是薄膜5偏向喷嘴电极21。
图5是类似于图4的视图,表示当施加的电压极性与图4中极性相反,即第一基片1相对于喷嘴电极21为负时,在薄膜和喷嘴电极中电荷的分布。在此情况下,P型硅薄膜5中的空穴19由于公共电极17的负电位而被它吸引并向它移动,但由于受主原子是固定于硅晶体而不能移动的,故硅在电气上被分成两层,第一层带空穴19的正电,第二层由于受主原子(离子化硼)而带负电,其内不存在移动的空穴。因此,第一基片1具有一个由空间电荷层25的深度和硅的介电常数确定的电容量,从而起到一个电容器的作用。这样第一基片1不能起到一个导体的作用,而且薄膜5和与其相对的喷嘴电极21之间的所产生的静电吸力相对于所加脉冲电压减小了一个相当于该电容两端电压降的量。因此,薄膜5偏转8  充分,不能确保喷墨性能。当第一基片1用作负电极时,还存在薄膜5变成不可能偏转从而不能驱动喷墨头的情况。
当将m-型硅半导体用作基片材料时,性况与上述情况相反,即,当将负电位加到基片1时,该基片起导体作用,而当将正电位加到基片1,该基片不能成为导体而由于空间电荷层之故具有电容量,其中不存在流动电子。因此,这种m-型硅半导体基片与P型半导体同样可通过施加一个与P型半导体基片所施加的相反极性电压来驱动,同样能确保优良的喷墨性能。
图6是根据本发明的一个喷墨头驱动电路的示意图。图6示出对应一个喷嘴的一个静电致动器的驱动电路。正如本领域技术人员会理解的,对于多个喷嘴,则需要相应的多个驱动电路。图中所示电容器110表示由薄膜5与对应的电极21之一所形成的电容器。标号106和107是第一和第二开关元件,它们均可为双极性晶体管或MOS晶体管。注意,此处所描述的驱动电路假设为m-型基片材料。正如从以上描述中会清楚,当将m型半导体用作基片1时,驱动电路102和喷墨头10之间的连接是同用P型半导体时的连接相反的。
图7是一个静电充电和放电的时序图。图7(A)表示充电时序,而图7(B)表示放电时序。图中还示出了充电信号111,放电信号112以及充电时间T。
图8和图9分别示出本实施例中在静电充电和放电期间喷墨头的状态。
下面描述如上述结构和连接的本实施例的驱动方法。
当喷墨信号,即,充电信号111输入到驱动电路102的门121时,晶体管108变成导通(ON),第一开关无件106变成开(ON),则电容器110经电阻113充电。于是如图8所示,静电吸力使薄膜5偏向喷嘴电极21。薄膜的偏转扩大了墨水盒6的容积并使墨水从墨水腔通过小孔7吸入。经过预定充电时间T之后,充电信号的后沿使晶体管108返回到截止(OFF)状态,从而使第一开关元件106关(OFF)并中断电容器110的充电通路。然后,放电信号112输入至门122,使晶体管109变为截止(OFF)和第二开关元件107变为开(ON)。随之,沿箭头A方向的电流(图6)通过电阻114,而贮存在电容器110中的电荷急速放电。结果,由静电引起作用在喷嘴电极21和薄膜5上的吸力消失,薄膜5由于其固有刚度而回到原始位置。这使墨水盒6内部压力迅速增强,同时使墨水滴104从喷嘴4喷射至记录纸105(图9)上。通过适当选择电阻113和114的阻值,便可获得具有相对的慢速充电和快速放电的理想充/放电特性。
图10是包含以上所述喷墨头的打印机的概念性示意图。该打印机包括压纸卷筒300,用于传送记录纸105;一个墨水箱301存放墨水和通过供墨管306将墨水供给喷墨头10;一个托架302,用以以垂直于记录纸105传输方向支承和移动喷墨头10;以及一个泵303,用于当有喷墨故障时通过罩304和废墨回收管308将墨水吸入废储器305而从喷墨头10回收墨水。
在使用上述驱动方法和打印机的打印试验中,打印机在50V低压电源下被成功驱动,在0.15μm3的喷墨量和10m/秒的喷墨输出率下,以高达5KHz的优质打印频率稳定地将墨水传送至纸。该喷墨头驱动方法还被确认为提供了最少重复喷墨两万亿(billion)的极佳寿命。

Claims (4)

1、一种喷墨记录设备,包括:
一个喷墨头,具有成形于P型或n-型半导体基片(1)中的至少一个喷嘴(4),一个连接到喷嘴的供墨通道(6,7),和邻接供墨通道的薄膜(5),还具有静电致动装置,用以驱动薄膜,致使墨水滴随着膜的运动而从喷嘴中喷射出来,所述静电致动装置包括附连到该基片的第一电极(17),所述膜(5)和与所述膜间隔一间隙(G)相对设置的第二电极(21),以及
驱动电路装置(102),用于选择性地提供所述第一和第二电极(17,21)之间的驱动电压,其中所述驱动电压的极性是如此选择的,以致在P-型基片情况下使所述第一电极相对于第二电极为正电位,而在n型基片情况下使所述第一电极相对于第二电极为负。
2、如权利要求1所述,其特征在于所述驱动电路装置包括:
用于产生一个预定充电脉冲宽度的充电脉冲信号和一个预定放电脉冲宽度的放电脉冲信号的装置;
用于将第一电位加到第一电极(17)的装置;
第一开关装置(106,108,121),用于响应所述充电脉冲信号在所述充电脉冲宽度期间将第二电位施加到第二电极;和
第二开关装置(107,109,122),用于响应所述放电脉冲信号,在所述放电脉冲宽度期间将所述第一电位施加到第二电极。
3、如权利要求2的所述设备,其特征在于所述驱动电路装置还包括用于确定静电致动器充电速度的装置(113)和用于确定放电速度的装置(114)。
4、如前述任一权利要求所定义的设备的驱动方法,其特征在于:墨水滴是通过在一预定周期内对所述静电致动器进行充电然后又在预定周期内对其进行放电而被喷射的。
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US5975668A (en) 1999-11-02
CN1054807C (zh) 2000-07-26
EP0629502A2 (en) 1994-12-21
US5821951A (en) 1998-10-13

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