CN110660643A - 一种优化氮化镓高电子迁移率晶体管钝化的方法 - Google Patents
一种优化氮化镓高电子迁移率晶体管钝化的方法 Download PDFInfo
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Abstract
本发明属于半导体制造领域,本发明公开了一种优化氮化镓高电子迁移率晶体管钝化的方法。该方法包括以下步骤:在衬底生长氮化镓外延层;刻蚀形成有源区台面;形成源、漏欧姆接触电极;去除氮化镓材料表面天然氧化层;淀积氧化镓作为钝化层与GaN盖帽层的中间层;在氧化镓中间层上方淀积器件钝化层;形成栅极的金属电极。本发明可以降低氮化镓盖帽层与钝化层之间的界面缺陷,提升器件的钝化效果,有效地抑制氮化镓高电子迁移率晶体管电流崩塌现象,提升器件击穿电压。
Description
技术领域
本发明属于半导体制造领域,涉及氮化镓高电子迁移率晶体管(GaN HEMT)制备,具体涉及一种GaN HEMT器件表面钝化的方法。
背景技术
氮化镓半导体材料具有禁带宽带大、高载流子迁移率、优良的热电传导性与击穿场高等显著特点。在光电子、高压、高频的电子器件领域发展前景十分广阔。氮化镓高电子迁移率晶体管是利用AlGaN/GaN异质结处的二维电子气作为导电沟道形成的一种氮化镓器件。然而,氮化镓高电子迁移率晶体管由于氮化镓材料与传统钝化层材料存在着界面态差的问题。另外,在使用PECVD或者ICPCVD淀积钝化层材料的过程中,等离子体可能对于氮化镓材料表面的损伤。在高场压力的情况下,氮化镓材料与钝化层材料之间的电子陷阱会俘获高场下产生的热电子,这将会使器件在高频、高压的应用时容易产生电流崩塌等现象,使器件的性能、稳定性发生退化。
发明内容
本发明目的:提高GaN HEMT表面钝化效果,降低GaN HEMT器件电流崩塌的方法。改善氮化镓材料与钝化层的界面质量。
本发明提供一种优化氮化镓高电子迁移率晶体管钝化的方法,步骤如下:
1、在衬底上使用MOCVD依次生长GaN沟道层、AlGaN势垒层、GaN盖帽层。
2、在以上结构的GaN/AlGaN/GaN样品上,通过光刻以及ICP刻蚀技术形成有源区台面。
3、通过电子束蒸发源、漏电极材料制备出源、漏的合金电极,并且在氮气氛围中进行快速热退火,形成欧姆接触。
4、在形成欧姆接触之后,将样品放入盐酸溶液中常温浸泡,用于去除表面天然氧化层;完成后用去离子水冲洗,并氮气吹干。
5、将样品放入ALD或者PEALD设备中,利用氧源和镓前驱体源,淀积氧化镓作为钝化层与GaN盖帽层的中间层。
6、在完成氧化镓中间层生长之后,立即在样品上使用PECVD或者ICPCVD或者LPCVD生长钝化层。
7、在生长完钝化层后,利用光刻刻蚀栅电极区域的钝化层,通过电子束蒸发栅极区的栅极材料得到金属电极。
8、利用光刻刻蚀源、漏电极区域上覆盖的的氧化镓中间层和钝化层,完成整体器件的制备。
优选的是,在步骤(1)中,衬底可以是硅,蓝宝石,或者碳化硅。
优选的是,在步骤(1)中,GaN沟道层的厚度在0 ~ 6000nm。
优选的是,在步骤(1)中,AlGaN势垒层的厚度在0 ~ 50nm。
优选的是,在步骤(1)中,AlGaN势垒层中Al的组分为0 ~ 1。
优选的是,在步骤(1)中,GaN盖帽层的厚度在0 ~ 10nm。
优选的是,在步骤(2)中,有源区台面采用ICP刻蚀,刻蚀使用的气体为Cl2或者BCl3或者Cl2/BCl3混合气体;有源区台面的刻蚀深度为0 ~ 1000nm。
优选的是,在步骤(3)中,源、漏极材料为:钛、铝、镍、金、氮化钛、铂、钨、硅、硒等中的一种或者多种的组合。
优选的是,在步骤(3)中,快速热退火温度为700℃ ~ 900℃,快速热退火时间为30s ~ 60s。
优选的是,在步骤(4)中,酸溶液可以是盐酸溶液或氢氟酸溶液。酸溶液的浓度为1% ~ 20%,浸泡时间为1分钟~ 20分钟。
优选的是,在步骤(5)中,氧源包括水、双氧水、氧气和臭氧;在步骤(5)中镓前驱体源包括三甲基镓、三乙基镓、和二异丁基嫁。
优选的是,在步骤(5)中,ALD或者PEALD设备反应室的温度为25℃ ~ 400℃,优选为200℃~ 300℃,真空范围为50pa ~ 500pa;其中,氧化镓中间层的厚度为3nm ~ 20nm。
优选的是,在步骤(6)中,钝化层可以是SiO2或者SiON或者 Si3N4,钝化层厚度为1nm ~ 1000nm。
优选的是,在步骤(7)中源、漏极的材料优选为Ni/TiN的组合,Ni厚度为50nm ~100nm,金属TiN厚度为40nm ~ 120nm。
本发明的优点是:能够有效地钝化GaN表面。通过去除GaN表面的天然氧化层,以及使用ALD淀积氧化镓作为钝化层与GaN盖帽层的中间层,利用氮化镓材料与氧化镓材料界面优良的特点,降低GaN盖帽层与钝化层之间的界面缺陷。另外,氧化镓中间层可以作为PECVD或者ICPCVD、LPCVD淀积钝化层时器件的保护层,减小淀积过程中等离子体对于GaN盖帽层表面的损伤。该方法可以降低GaN HEMT 器件表面漏电流,减少GaN HEMT 器件电流崩塌的发生。另外,利用光刻以及干法刻蚀方法刻蚀栅电极区域的钝化层,保留在栅极金属下方的氧化镓中间层可以直接作为器件的栅介质,进一步降低GaN HEMT 器件栅极漏电流,提升器件的可靠性。最后,氧化镓作为一种高介电常数材料,钝化GaN表面可以有效降低在高压情况下,晶体管栅极到漏极的电场强度,提高器件的击穿电压。
附图说明
下面结合附图及实施例对本发明作进一步描述:
图1为AlGaN/GaN异质结结构衬底截面图;
图2为形成源漏极欧姆接触电极后的器件截面图;
图3为淀积氧化镓中间层后的器件截面图;
图4为淀积氮化硅钝化层后的器件截面图;
图5为形成栅电极后的器件截面图;
图6为制造完成后的器件截面图。
具体实施方式
实施例1
一种优化氮化镓高电子迁移率晶体管钝化的方法包括:
第一、使用MOCVD设备在硅或蓝宝石或碳化硅的衬底上依次生长GaN沟道层、AlGaN势垒层、GaN盖帽层,形成GaN/AlGaN/GaN结构的样品;
第二、在GaN/AlGaN/GaN结构的样品上刻蚀出有源区台面,通过电子束蒸发在有源区台面制备源、漏区的合金电极,且源极和漏极在700℃~900℃的氮气氛围中进行快速退火30s~60s形成欧姆接触;
第三、将形成源、漏极后的样品放置于浓度1%~20%的酸溶液中浸泡1分钟~20分钟来去除样品上的天然氧化层,
第四、去除天然氧化层后,将样品放入ALD或者PEALD设备中,ALD或者PEALD设备反应室的温度为25℃ ~ 400℃,真空范围为50pa ~ 500pa。利用氧源和镓前驱体源在GaN盖帽层及源、漏极上淀积氧化镓中间层;
第五、完成氧化镓中间层生长之后,立即使用PECVD或者ICPCVD或者LPCVD设备在氧化镓中间层上淀积钝化层,钝化层为SiO2、SiON 或者 Si3N4中的一种或多种的组合;
第六、利用光刻刻蚀钝化层以形成栅极区域,并通过电子束蒸发栅极材料,在栅极区域内制备出金属电极;
第七、利用光刻刻蚀源、漏极上覆盖的中间层和钝化层,完成整体器件的制备。
基于上述方法步骤,其中涉及到的工艺参数具体取值如下表所示:
序号 | 源、漏极快速热退火温度(℃) | 源、漏极快速热退火时间(s) | 氧化镓中间层的淀积温度(℃) | 氧化镓中间层的淀积压力(pa) | 酸溶液的浓度(%) | 酸溶液中浸泡的时间(min) |
1 | 870 | 45 | 200 | 14 | 10 | 5 |
2 | 870 | 45 | 250 | 14 | 10 | 5 |
3 | 870 | 45 | 275 | 14 | 10 | 5 |
4 | 870 | 45 | 300 | 14 | 10 | 5 |
实施例2:
一种优化氮化镓高电子迁移率晶体管钝化的方法,步骤如下:
1、在衬底上使用MOCVD依次生长0~6000nm厚度的GaN沟道层、0~50nm厚度的AlGaN势垒层、0~10nm厚度的GaN盖帽层。
2、在以上结构的GaN/AlGaN/GaN样品上,通过光刻以及ICP刻蚀技术形成有源区台面,ICP刻蚀深度为1~1000nm。
3、通过电子束蒸发源、漏电极材料制备出源、漏的合金电极,并且在氮气氛围中进行快速热退火,形成欧姆接触。
4、在形成欧姆接触之后,将样品放入盐酸溶液中常温浸泡,用于去除表面天然氧化层;完成后用去离子水冲洗,并氮气吹干。
5、将样品放入ALD或者PEALD设备中,利用氧源和镓前驱体源,淀积氧化镓作为钝化层与GaN盖帽层的中间层,氧化镓中间层的厚度为3nm~20nm。
6、在完成氧化镓中间层生长之后,立即在样品上使用PECVD或者ICPCVD或者LPCVD生长钝化层。
7、在生长完钝化层后,利用光刻刻蚀栅电极区域的钝化层,钝化层厚度为1nm~1000nm。再通过电子束蒸发栅极区栅极材料得到金属电极,栅极材料优选Ni/TiN的组合,其中Ni厚度为50nm~100nm,金属TiN厚度为40nm~120nm。
8、利用光刻刻蚀源、漏电极区域上覆盖的的氧化镓中间层和钝化层,完成整体器件的制备。
基于上述方法步骤中,所涉及的各层厚参数具体取值如下表所示:
序号 | GaN沟道层厚度(nm) | AlGaN势垒层厚度(nm) | GaN盖帽层厚度(nm) | 有源区台面ICP刻蚀深度(nm) | 氧化镓中间层厚度(nm) | 钝化层厚度(nm) | 金属电极中Ni厚度(nm) | 金属电极中TiN厚度(nm) |
1 | 4200 | 25 | 2 | 300 | 10 | 100 | 50 | 80 |
2 | 4200 | 25 | 2 | 300 | 15 | 100 | 50 | 80 |
3 | 4200 | 25 | 2 | 300 | 20 | 100 | 50 | 80 |
4 | 4200 | 25 | 2 | 300 | 25 | 100 | 50 | 80 |
实施例3:
如附图1-6所示,一种优化氮化镓高电子迁移率晶体管钝化的方法,其步骤包括:
(1)如图1所示,在Si衬底上,首先用MOCVD生长一层GaN沟道层,在其之上生长一层约为25nm的AlGaN势垒层,最后生长GaN表面盖帽层。
(2)在以上结构的氮化镓异质结衬底上,通过光刻以及ICP刻蚀技术形成约300nm高有源区台面。
(3)对制备好的有源区进行光刻,光刻出源漏电极区域,通过电子束蒸发Ti/Al/Ni/TiN(30nm/120nm/60nm/60nm)四种材料,采用剥离工艺制备出源区和漏区的金属电极。并且在860℃ 的氮气氛围中进行快速退火40秒,形成欧姆接触,其横截面图如图2所示。
(4)在形成欧姆接触之后,将样品放入浓度为20%的盐酸溶液中常温浸泡5分钟,用于去除表面天然氧化层;完成后去离子水冲洗2分钟,氮气吹干。
(5)将样品放入等PEALD设备中,利用去臭氧作为氧源,三甲基镓作为前驱体源,腔体温度为250度,腔体压力约为50帕,淀积约为15纳米厚的氧化镓,作为钝化层与GaN盖帽层的中间层。结构如图3所示。
(6)在完成中间层生长之后,立即在样品上使用PECVD生长约为200nm 氮化硅的钝化层,结构如图4所示。
(7)在生长完钝化层后,利用光刻以及干法刻蚀方法刻蚀栅电极区域的钝化层,通过电子束蒸发Ni/TiN(50nm/100nm)两种材料,采用剥离工艺制备出栅极区的金属电极。结构如图5所示。
(8)利用光刻以及湿法刻蚀方法刻蚀源漏电极区域上的中间层和钝化层,完成整体器件的制备。结构如图6所示。
上述实施例仅例示性说明本发明的原理及其功效,而非用于限制本发明的。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下,对上述实施例进行修饰或改变。因此,举凡所属技术领域中具有通常知识者在未脱离本发明的所揭示的精神与技术思想下所完成的一切等效修饰或改变,仍应由本发明的权利要求所涵盖。
Claims (9)
1.一种优化氮化镓高电子迁移率晶体管钝化的方法,其特征在于:步骤包括:
第一、使用MOCVD设备在硅或蓝宝石或碳化硅的衬底上依次生长GaN沟道层、AlGaN势垒层、GaN盖帽层,形成GaN/AlGaN/GaN结构的样品;
第二、在GaN/AlGaN/GaN结构的样品上刻蚀出有源区台面,通过电子束蒸发在有源区台面制备源、漏区的合金电极,且源极和漏极在700℃ ~900℃的氮气氛围中进行快速退火30s~60s形成欧姆接触;
第三、将形成源、漏极后的样品放置于浓度1%~20%的酸溶液中浸泡1分钟~20分钟来去除样品上的天然氧化层,
第四、去除天然氧化层后,将样品放入ALD或者PEALD设备中,利用氧源和镓前驱体源在GaN盖帽层及源、漏极上淀积氧化镓中间层;
第五、完成氧化镓中间层生长之后,立即使用PECVD或者ICPCVD或者LPCVD设备在氧化镓中间层上淀积钝化层,钝化层为SiO2、SiON 或者 Si3N4中的一种或多种的组合;
第六、利用光刻刻蚀钝化层以形成栅极区域,并通过电子束蒸发栅极材料,在栅极区域内制备出金属电极;
第七、利用光刻刻蚀源、漏极上覆盖的中间层和钝化层,完成整体器件的制备。
2.根据权利要求1所述的一种优化氮化镓高电子迁移率晶体管钝化的方法,其特征在于:第四步中,所述氧源包括水、双氧水、氧气和臭氧,所述镓前驱体源包括三甲基镓、三乙基镓和二异丁基嫁。
3.根据权利要求1所述的一种优化氮化镓高电子迁移率晶体管钝化的方法,其特征在于:第四步中,样品在ALD或者PEALD设备中淀积氧化镓中间层,设备的反应室温度为25℃~400℃,设备的反应室真空范围为1pa~5000pa。
4.根据权利要求1所述的一种优化氮化镓高电子迁移率晶体管钝化的方法,其特征在于:所述氧化镓中间层的厚度为1nm~500nm。
5.根据权利要求1所述的一种优化氮化镓高电子迁移率晶体管钝化的方法,其特征在于:所述钝化层厚度为1nm~1000nm。
6.根据权利要求1所述的一种优化氮化镓高电子迁移率晶体管钝化的方法,其特征在于:所述栅极材料为:钛、铝、镍、金、氮化钛、铂、钨、硅、硒等中的一种或者多种的组合。
7.根据权利要求1所述的一种优化氮化镓高电子迁移率晶体管钝化的方法,其特征在于:所述GaN沟道层的厚度为0~6000nm,所述AlGaN势垒层的厚度为0~50nm,所述GaN盖帽层的厚度为0~10nm。
8.根据权利要求1所述的一种优化氮化镓高电子迁移率晶体管钝化的方法,其特征在于:所述第二步中,有源区台面的刻蚀深度为1~1000nm。
9.根据权利要求1所述的一种优化氮化镓高电子迁移率晶体管钝化的方法,其特征在于:所述源、漏极的材料为:钛、铝、镍、金、氮化钛、铂、钨、硅、硒等中的一种或者多种的组合。
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