AU2020104122A4 - A Low-leakage GaN SBD Device and Preparation Method - Google Patents
A Low-leakage GaN SBD Device and Preparation Method Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 29
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 3
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 3
- 239000010980 sapphire Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 235000012431 wafers Nutrition 0.000 claims description 60
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 48
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 42
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- 238000001035 drying Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 238000003475 lamination Methods 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 7
- 229910021389 graphene Inorganic materials 0.000 claims description 7
- 238000002791 soaking Methods 0.000 claims description 7
- 229910015844 BCl3 Inorganic materials 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 6
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 39
- 239000004065 semiconductor Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 2
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- IWWWBHLHVSHIQM-UHFFFAOYSA-M [F-].[Mo+](=S)=S Chemical compound [F-].[Mo+](=S)=S IWWWBHLHVSHIQM-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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Abstract
A low-leakage GaN SBD device, comprising a sapphire substrate layer, a magnetron sputtering
aluminum nitride layer, a GaN layer, an AlGaN layer, a cathode metal, an anode metal and a two
dimensional fluorinated material passivated layer, wherein a two-dimensional fluorinated
material passivated layer is covered on the surface of the AlGaN/GaN; furthermore, the two
dimensional fluorinated material passivated layer is located above the AlGaN layer, the cathode
metal is located on both sides above the AlGaN layer, and the anode metal is located above the
AlGaN layer.
Description
A Low-leakage GaN SBD Device and Preparation Method
[01] The present invention belongs to the field of microelectronics technology. Further, it refers to a method for preparing a GaN SBD device, which can be used for preparing semiconductor devices.
[02] The third-generation semiconductor represented by GaN is widely used in semiconductor power devices due to its characteristics such as wide band gap, high thermal conductivity, high breakdown voltage and good electrical properties. Gan based semiconductor devices are characterized by high conversion rate and low loss, so they become a new generation of semiconductor devices with high efficiency.
[03] AlGaN/GaN has excellent material and device characteristics, such as high breakdown field strength, low on-resistance, high switching frequency, etc., but the traditional AlGaN/GaN diode with a Schottky structure and no passivated surface has unacceptable leakage current and surface donor state. The donor state produced by dangling bonds, dislocations, and ions absorbed from the surrounding environment increases the surface leakage current and current collapse effect. Therefore, reducing the surface donor state becomes the key problem of GaN semiconductor devices.
[04] As the two-dimensional fluoridated material is a good insulator, a layer of two-dimensional fluoridated material can be covered on the surface of the AlGaN/GaN Schottky diode to act as a passivated layer to protect the device and reduce the number of surface donor states so as to reduce the leakage of the AlGaN/GaN Schottky diode. The electrons of the two-dimensional fluorinated material can be captured in the donor state on the AlGaN/GaN surface, and a dipole layer can be formed on the AlGaN/GaN surface to make the surface donor state become electric neutrality. Therefore, two dimensional fluorinated materials transferred to the AlGaN/GaN surface can suppress surface leakage by an order of magnitude under reverse and low forward bias pressures.
[05] For defects in the prior art, the present invention is aimed at providing a low-leakage GaN SBD device and a preparation method to improve the electrical performance of the SBD device and reduce the surface leakage of the traditional GaN SBD.
[06] For realizing the above-mentioned purpose, the present invention adopts the following technical solution: covering the AlGaN/GaN surface with a layer of two dimensional fluorinated material so that the electrons of the two-dimensional fluorinated material can be captured in the donor state on the AlGaN/GaN surface, and forming a dipole layer on the AlGaN/GaN surface to make the surface donor state become electric neutrality, so as to reduce the charge amount of the surface donor state and the surface leakage. The solution for realization is as follows:
[07] 1. A low-leakage GaN SBD device, comprising a sapphire substrate layer (1), a magnetron sputtering aluminum nitride layer (2), a GaN layer (3), an AlGaN layer (4), a cathode metal (5), an anode metal (6) and a two-dimensional fluorinated material passivated layer (7), wherein a two-dimensional fluorinated material passivated layer (7) is covered on the surface of the AlGaN/GaN;
[08] furthermore, the two-dimensional fluorinated material passivated layer is located above the AlGaN layer, the cathode metal is located on both sides above the AlGaN layer, and the anode metal is located above the AlGaN layer.
[09] 2. A method for preparing the low-leakage GaN SBD device, comprising the following steps:
[010] 1) cleaning AlGaN/GaN epitaxial wafers: carrying out ultrasonic cleaning for the AlGaN/GaN epitaxial wafers by using acetone and isopropanol successively for minutes, and drying with nitrogen;
[011] 2) preparing the table isolation:
[012] 2a) homogenizing, drying, photoetching and developing on the cleaned epitaxial wafers;
[013] 2b) using the ICP etcher to etch the area outside the GaN table; and
[014] 2c) putting the etched epitaxial wafers into the acetone solution and the isopropyl alcohol solution successively, carrying out ultrasonic cleaning for 15min for each, and drying with nitrogen to form device isolation;
[015] 3) preparing a cathode metal:
[016] 3a) homogenizing, drying, photoetching and developing on the etched epitaxial wafers;
[017] 3b) depositing Ti/Al/Ni/Au metal lamination layer on the epitaxial wafers by using a piece of electron beam evaporation equipment;
[018] 3c) soaking the epitaxial wafers deposited with metal lamination layer in the acetone solution to make the metal outside the cathode metal stripped, then putting the stripped epitaxial wafers successively into the acetone solution and the isopropanol solution, carrying out ultrasonic clearing for15min for each, and drying with nitrogen; and
[019] 3d) finally, putting the epitaxial wafers into the short annealing furnace to form the cathode of the device and complete the preparation of diode cathode;
[020] 4) preparing an anode metal:
[021] 4a) homogenizing, drying, photoetching and developing on the epitaxial wafers deposited with cathode;
[022] 4b) using the ICP etcher to etch the barrier layer to 2-20nm above the GaN layer, and to etch an anode groove;
[023] 4c) depositing W/Au metal lamination layer on the epitaxial wafers by using a piece of electron beam evaporation equipment; and
[024] 4d) soaking the epitaxial wafers deposited with metal lamination layer in the acetone solution to make the metal outside the anode metal stripped, then putting the stripped epitaxial wafers successively into the acetone solution and the isopropanol solution, carrying out ultrasonic clearing for15min for each, and drying with nitrogen to complete the preparation of diode anode;
[025] 5) preparing a passivated layer and opening:
[026] 5a) transferring the two-dimensional material to an epitaxial wafer with the diode anode completed;
[027] 5b) using the Plasma to fluorinate the two-dimensional material transferred to an epitaxial wafer with the diode anode completed;
[028] 5c) homogenizing, drying, through-hole photoetching and developing on an epitaxial wafer with the two-dimensional material fluorinated, and using a RIE etcher to etch the through-hole area to the metal surface; and
[029] 5d) putting the etched epitaxial wafers into the acetone solution and the isopropyl alcohol solution successively for cleaning for 15min, and drying with nitrogen to form the GaN diode.
[030] Compared with the prior art, the present invention has the advantages as follows:
[031] In the present invention, the AlGaN/GaN surface is covered with a layer of two-dimensional fluorinated material so that the electrons of the two-dimensional fluorinated material can be captured in the donor state on the AlGaN/GaN surface, and a dipole layer is formed on the AlGaN/GaN surface to make the surface donor state become electric neutrality, so as to reduce the charge amount of the surface donor state and the surface leakage of GaN SBD.
[032] Fig. 1 shows a profile structure of GaN SBD in the present invention;
[033] As shown in Fig. 1, a low-leakage GaN SBD device is prepared in the present invention, and two embodiments are given as follows:
[034] Embodiment 1: GaN diode device for the preparation of fluorinated graphene
[035] Step 1: cleaning the epitaxial wafers
[036] putting the epitaxial wafers with AlGaN/GaN structure into the acetone solution and the isopropyl alcohol solution successively, carrying out ultrasonic cleaning for 15min for each, and drying with nitrogen;
[037] Step 2: preparing the table isolation
[038] homogenizing, drying, photoetching and developing on the cleaned epitaxial wafers first; and then using the ICP etcher to etch the area outside the GaN table; next, putting the etched epitaxial wafers into the acetone solution and the isopropyl alcohol solution successively, carrying out ultrasonic cleaning for 15min for each, and drying with nitrogen to form device isolation;
[039] Step 3: preparing a cathode metal
[040] homogenizing, drying, photoetching and developing on the etched epitaxial wafers first; and then depositing Ti/Al/Ni/Au metal lamination layer on the epitaxial wafers by using a piece of electron beam evaporation equipment; next, soaking the epitaxial wafers deposited with metal lamination layer in the acetone solution to make the metal outside the cathode metal stripped, then putting the stripped epitaxial wafers successively into the acetone solution and the isopropanol solution; finally, putting the epitaxial wafers into the short annealing furnace to form the cathode of the device and complete the preparation of diode cathode;
[041] Step 4: preparing an anode metal
[042] homogenizing, drying, photoetching and developing on the epitaxial wafers deposited with cathode first; and then using the ICP etcher to etch the barrier layer to 2nm above the GaN layer, and to etch an anode groove; the process conditions of etching the barrier layer are as follows: BCl3 gas flow: 50sccm, radio-frequency power: W, pressure in the reaction chamber: 40mTorr; next, depositing 20nm metal W on the epitaxial wafers by using a piece of electron beam evaporation equipment, and depositing 100nm metal Au to form a metal lamination layer; finally, soaking the epitaxial wafers deposited with metal lamination layer in the acetone solution to make the metal outside the anode metal stripped, then putting the stripped epitaxial wafers successively into the acetone solution and the isopropanol solution, carrying out ultrasonic clearing for15min for each, and drying with nitrogen to complete the preparation of diode anode;
[043] Step 5: preparing a passivated layer and opening
[044] transferring a monolayer graphene to an epitaxial wafer with the diode anode completed first; and then using the Plasma to fluorinate the graphene transferred to an epitaxial wafer with the diode anode completed; the process conditions of fluorinating the graphene are as follows: CF6gas flow: 30sccm, power: 40W, time: 5s; next, homogenizing, drying, through-hole photoetching and developing on an epitaxial wafer with the two-dimensional material fluorinated, and using a RIE etcher to etch the through-hole area to the metal surface; the process conditions of etching and fluorinating the graphene passivated layer are as follows: C12gas flow: 30sccm, BCl3 gas flow: 75sccm, radio-frequency power: 100W, pressure in the reaction chamber: mTorr; putting the etched epitaxial wafers into the acetone solution and the isopropyl alcohol solution successively for cleaning for 15min, and drying with nitrogen to form the GaN diode.
[045] Embodiment 2: GaN diode device for the preparation of molybdenum disulfide fluoride
[046] Step 1: the specific implementation of this step is the same as Step 1 in Embodiment 1.
[047] Step 2: the specific implementation of this step is the same as Step 2 in Embodiment 1.
[048] Step 3: the specific implementation of this step is the same as Step 3 in Embodiment 1.
[049] Step 4: preparing an anode metal
[050] homogenizing, drying, photoetching and developing on the epitaxial wafers deposited with cathode first, and then using the ICP etcher to etch the barrier layer to nm above the GaN layer, and to etch an anode groove; the process conditions of etching the barrier layer are as follows: BCl3 gas flow: 100sccm, radio-frequency power: 100W, pressure in the reaction chamber: 40mTorr;
[051] next, depositing 20nm metal W on the epitaxial wafers by using a piece of electron beam evaporation equipment, and depositing 100nm metal Au to form a metal lamination layer;
[052] finally, soaking the epitaxial wafers deposited with metal lamination layer in the acetone solution to make the metal outside the anode metal stripped, then putting the stripped epitaxial wafers successively into the acetone solution and the isopropanol solution, carrying out ultrasonic clearing for15min for each, and drying with nitrogen to complete the preparation of diode anode;
[053] Step 5: depositing the mediums and opening
[054] transferring a monolayer molybdenum disulfide to an epitaxial wafer with the diode anode completed first;
[055] and then, using the Plasma to fluorinate the graphene transferred to an epitaxial wafer with the diode anode completed; the process conditions of fluorinating the graphene are as follows: SF6 gas flow: 100sccm, power: 100W, time: 60s;
[056] homogenizing, drying, through-hole photoetching and developing on an epitaxial wafer with the two-dimensional material fluorinated, and using a RIE etcher to etch the through-hole area to the metal surface; the process conditions of etching the passivated layer of molybdenum disulfide are as follows: C12 gas flow: 30sccm, BCl3 gas flow: 75sccm, radio-frequency power: 150W, pressure in the reaction chamber: mTorr; and
[057] finally, putting the etched epitaxial wafers into the acetone solution and the isopropyl alcohol solution successively for cleaning for 15min, and drying with nitrogen to form the GaN diode.
[058] Although the invention has been described with reference to specific examples, it will be appreciated by those skilled in the art that the invention may be embodied in many other forms, in keeping with the broad principles and the spirit of the invention described herein.
[059] The present invention and the described embodiments specifically include the best method known to the applicant of performing the invention. The present invention and the described preferred embodiments specifically include at least one feature that is industrially applicable
Claims (8)
1. A low-leakage GaN SBD device, comprising a sapphire substrate layer (1), a magnetron sputtering aluminum nitride layer (2), a GaN layer (3), an AlGaN layer (4), a cathode metal (5), an anode metal (6) and a two-dimensional fluorinated material passivated layer (7), wherein a two-dimensional fluorinated material passivated layer (7) is covered on the surface of the AlGaN/GaN; furthermore, the two-dimensional fluorinated material passivated layer is located above the AlGaN layer, the cathode metal is located on both sides above the AlGaN layer, and the anode metal is located above the AlGaN layer.
2. The structure according to Claim 1, wherein the two-dimensional fluorinated material passivated layer (7) is made of two-dimensional materials that have been fluorinated with Plasma.
3. The structure according to Claim 1, wherein an ICP etcher is used to etch the anode groove as the etching barrier layer 2-20nm above the GaN interface.
4. The structure according to Claim 1, wherein the metal of the anode metal barrier layer (6) is W/Au, the growth thickness of the metal W is 20nm, and the growth thickness of the metal Au is 100nm.
5. A method for preparing the GaN SBD device based on graphene insertion layer structure, comprising the following steps:
1) cleaning AlGaN/GaN epitaxial wafers: carrying out ultrasonic cleaning for the AlGaN/GaN epitaxial wafers by using acetone and isopropanol successively for 15 minutes, and drying with nitrogen;
2) preparing the table isolation:
2a) homogenizing, drying, photoetching and developing on the cleaned epitaxial wafers;
2b) using the ICP etcher to etch the area outside the GaN table; and
2c) putting the etched epitaxial wafers into the acetone solution and the isopropyl alcohol solution successively, carrying out ultrasonic cleaning for 15min for each, and drying with nitrogen to form device isolation;
3) preparing a cathode metal:
3a) homogenizing, drying, photoetching and developing on the etched epitaxial wafers;
3b) depositing Ti/Al/Ni/Au metal lamination layer on the epitaxial wafers by using a piece of electron beam evaporation equipment;
3c) soaking the epitaxial wafers deposited with metal lamination layer in the acetone solution to make the metal outside the cathode metal stripped, then putting the stripped epitaxial wafers successively into the acetone solution and the isopropanol solution, carrying out ultrasonic clearing for15min for each, and drying with nitrogen; and
3d) finally, putting the epitaxial wafers into the short annealing furnace to form the cathode of the device and complete the preparation of diode cathode;
4) preparing an anode metal:
4a) homogenizing, drying, photoetching and developing on the epitaxial wafers deposited with cathode;
4b) using the ICP etcher to etch the barrier layer to 2-20nm above the GaN layer, and to etch an anode groove;
4c) depositing W/Au metal lamination layer on the epitaxial wafers by using a piece of electron beam evaporation equipment; and
4d) soaking the epitaxial wafers deposited with metal lamination layer in the acetone solution to make the metal outside the anode metal stripped, then putting the stripped epitaxial wafers successively into the acetone solution and the isopropanol solution, carrying out ultrasonic clearing for15min for each, and drying with nitrogen to complete the preparation of diode anode;
5) preparing a passivated layer and opening:
5a) transferring the two-dimensional material to an epitaxial wafer with the diode anode completed;
5b) using the Plasma to fluorinate the two-dimensional material transferred to an epitaxial wafer with the diode anode completed;
5c) homogenizing, drying, through-hole photoetching and developing on an epitaxial wafer with the two-dimensional material fluorinated, and using a RIE etcher to etch the through-hole area to the metal surface; and
5d) putting the etched epitaxial wafers into the acetone solution and the isopropyl alcohol solution successively for cleaning for 15min, and drying with nitrogen to form the GaN diode.
6. The method according to Claim 5, wherein the process parameters of the barrier layer etched by the ICP etcher described in Step 4b) are as follows: BCl3 gas flow: 50-100sccm, radio-frequency power: 40-100W, pressure inthe reaction chamber: mTorr.
7. The method according to Claim 5, wherein the process parameters of using the Plasma to fluorinate the two-dimensional material transferred to an epitaxial wafer with the diode anode completed described in Step 5b) are as follows: gas flow rate containing F gas: 30-100sccm, power: 40-100W, time: 5-60s, preferably CF4 or SF6 containing F gas.
8. The method according to Claim 5, wherein the process parameters of using a RIE etcher to etch the through-hole area to the metal surface described in Step 5c) are as follows: C12 gas flow: 30sccm, BCl3 gas flow: 75sccm, radio-frequency power: 100 150W, pressure in the reaction chamber: 40mTorr.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113540229A (en) * | 2021-06-11 | 2021-10-22 | 中兴通讯股份有限公司 | Semiconductor device and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113540229A (en) * | 2021-06-11 | 2021-10-22 | 中兴通讯股份有限公司 | Semiconductor device and method for manufacturing the same |
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