CN110520973B - 具有减小的寄生电容的垂直fet - Google Patents

具有减小的寄生电容的垂直fet Download PDF

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Publication number
CN110520973B
CN110520973B CN201880024368.8A CN201880024368A CN110520973B CN 110520973 B CN110520973 B CN 110520973B CN 201880024368 A CN201880024368 A CN 201880024368A CN 110520973 B CN110520973 B CN 110520973B
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source
drain
region
trench isolation
shallow trench
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CN110520973A (zh
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苗欣
程慷果
张辰
许文豫
P.J.奥迪格斯
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201880024368.8A 2017-04-17 2018-04-11 具有减小的寄生电容的垂直fet Active CN110520973B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/488,780 2017-04-17
US15/488,780 US9853028B1 (en) 2017-04-17 2017-04-17 Vertical FET with reduced parasitic capacitance
PCT/IB2018/052539 WO2018193342A1 (en) 2017-04-17 2018-04-11 Vertical fet with reduced parasitic capacitance

Publications (2)

Publication Number Publication Date
CN110520973A CN110520973A (zh) 2019-11-29
CN110520973B true CN110520973B (zh) 2023-05-23

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US (4) US9853028B1 (https=)
JP (1) JP7062682B2 (https=)
CN (1) CN110520973B (https=)
DE (2) DE112018000636B4 (https=)
GB (1) GB2577185B (https=)
WO (1) WO2018193342A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10211315B2 (en) * 2017-07-19 2019-02-19 Globalfoundries Inc. Vertical field-effect transistor having a dielectric spacer between a gate electrode edge and a self-aligned source/drain contact
US10176995B1 (en) * 2017-08-09 2019-01-08 Globalfoundries Inc. Methods, apparatus and system for gate cut process using a stress material in a finFET device
US10395988B1 (en) 2018-04-10 2019-08-27 International Business Machines Corporation Vertical FET transistor with reduced source/drain contact resistance
US10529713B2 (en) 2018-06-08 2020-01-07 International Business Machines Corporation Fin field effect transistor devices with modified spacer and gate dielectric thicknesses
US10453934B1 (en) 2018-06-11 2019-10-22 International Business Machines Corporation Vertical transport FET devices having air gap top spacer
US10622260B2 (en) 2018-06-12 2020-04-14 International Business Machines Corporation Vertical transistor with reduced parasitic capacitance
US10396151B1 (en) 2018-06-14 2019-08-27 International Business Machines Corporation Vertical field effect transistor with reduced gate to source/drain capacitance
US10707329B2 (en) 2018-07-06 2020-07-07 International Business Machines Corporation Vertical fin field effect transistor device with reduced gate variation and reduced capacitance
US10930758B2 (en) 2018-08-13 2021-02-23 International Business Machines Corporation Space deposition between source/drain and sacrificial layers
US10600885B2 (en) 2018-08-20 2020-03-24 International Business Machines Corporation Vertical fin field effect transistor devices with self-aligned source and drain junctions
US10937786B2 (en) * 2018-09-18 2021-03-02 Globalfoundries U.S. Inc. Gate cut structures
US11201089B2 (en) 2019-03-01 2021-12-14 International Business Machines Corporation Robust low-k bottom spacer for VFET
US10833081B2 (en) 2019-04-09 2020-11-10 International Business Machines Corporation Forming isolated contacts in a stacked vertical transport field effect transistor (VTFET)
US11205728B2 (en) 2019-05-23 2021-12-21 International Business Machines Corporation Vertical field effect transistor with reduced parasitic capacitance
US11217680B2 (en) * 2019-05-23 2022-01-04 International Business Machines Corporation Vertical field-effect transistor with T-shaped gate
US11152265B2 (en) * 2019-08-01 2021-10-19 International Business Machines Corporation Local isolation of source/drain for reducing parasitic capacitance in vertical field effect transistors
US11201241B2 (en) * 2020-01-07 2021-12-14 International Business Machines Corporation Vertical field effect transistor and method of manufacturing a vertical field effect transistor
US11217692B2 (en) 2020-01-09 2022-01-04 International Business Machines Corporation Vertical field effect transistor with bottom spacer
US11271107B2 (en) 2020-03-24 2022-03-08 International Business Machines Corporation Reduction of bottom epitaxy parasitics for vertical transport field effect transistors
CN113823692B (zh) * 2020-06-19 2023-12-22 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
EP3968387A1 (en) * 2020-09-15 2022-03-16 Imec VZW Gate spacer patterning
US20230091229A1 (en) * 2021-09-20 2023-03-23 International Business Machines Corporation Bottom junction and contact area structures for vertical transport field-effect transistors
US12550421B2 (en) 2022-07-15 2026-02-10 International Business Machines Corporation VTFET with reduced parasitic capacitance
CN119653822B (zh) * 2025-02-18 2025-06-17 赛晶亚太半导体科技(浙江)有限公司 半导体器件

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087581A (en) 1990-10-31 1992-02-11 Texas Instruments Incorporated Method of forming vertical FET device with low gate to source overlap capacitance
US5250450A (en) 1991-04-08 1993-10-05 Micron Technology, Inc. Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
US6621112B2 (en) * 2000-12-06 2003-09-16 Infineon Technologies Ag DRAM with vertical transistor and trench capacitor memory cells and methods of fabrication
US20040070050A1 (en) * 2002-10-10 2004-04-15 Taiwan Semiconductor Manufacturing Company Structures of vertical resistors and FETs as controlled by electrical field penetration and a band-gap voltage reference using vertical FETs operating in accumulation through the field penetration effect
TWI294670B (en) 2003-06-17 2008-03-11 Ibm Ultra scalable high speed heterojunction vertical n-channel misfets and methods thereof
TWI251342B (en) * 2003-07-24 2006-03-11 Samsung Electronics Co Ltd Vertical double-channel silicon-on-insulator transistor and method of manufacturing the same
US6933183B2 (en) * 2003-12-09 2005-08-23 International Business Machines Corporation Selfaligned source/drain FinFET process flow
US7230286B2 (en) 2005-05-23 2007-06-12 International Business Machines Corporation Vertical FET with nanowire channels and a silicided bottom contact
CN100490182C (zh) * 2007-06-19 2009-05-20 北京大学 鳍型沟道双栅多功能场效应晶体管的制备方法
WO2009072192A1 (ja) 2007-12-05 2009-06-11 Unisantis Electronics (Japan) Ltd. 半導体装置
JP4316659B2 (ja) 2008-01-29 2009-08-19 日本ユニサンティスエレクトロニクス株式会社 半導体装置およびその製造方法
US8012817B2 (en) * 2008-09-26 2011-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor performance improving method with metal gate
CN102117828B (zh) * 2009-12-30 2013-02-06 中国科学院微电子研究所 半导体器件及其制造方法
US8362572B2 (en) 2010-02-09 2013-01-29 Taiwan Semiconductor Manufacturing Co., Ltd. Lower parasitic capacitance FinFET
CN102376715B (zh) * 2010-08-11 2014-03-12 中国科学院微电子研究所 一种无电容型动态随机访问存储器结构及其制备方法
US9281378B2 (en) * 2012-01-24 2016-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Fin recess last process for FinFET fabrication
CN102646599B (zh) * 2012-04-09 2014-11-26 北京大学 一种大规模集成电路中FinFET的制备方法
CN103928327B (zh) * 2013-01-10 2017-07-14 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其形成方法
US20140264488A1 (en) * 2013-03-15 2014-09-18 Globalfoundries Inc. Methods of forming low defect replacement fins for a finfet semiconductor device and the resulting devices
JP5670603B1 (ja) 2013-04-26 2015-02-18 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法及び半導体装置
US9349850B2 (en) * 2013-07-17 2016-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Thermally tuning strain in semiconductor devices
US8952420B1 (en) * 2013-07-29 2015-02-10 Stmicroelectronics, Inc. Method to induce strain in 3-D microfabricated structures
US9425296B2 (en) * 2013-09-09 2016-08-23 Qualcomm Incorporated Vertical tunnel field effect transistor
US10008566B2 (en) 2013-09-12 2018-06-26 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device with reduced electrical resistance and capacitance
US9331204B2 (en) * 2014-03-13 2016-05-03 Macronix International Co., Ltd. High voltage field effect transistors and circuits utilizing the same
CN105336611A (zh) * 2014-06-18 2016-02-17 中芯国际集成电路制造(上海)有限公司 一种FinFET器件的制作方法
US9881993B2 (en) * 2014-06-27 2018-01-30 Taiwan Semiconductor Manufacturing Company Limited Method of forming semiconductor structure with horizontal gate all around structure
US9337306B2 (en) 2014-06-30 2016-05-10 Globalfoundries Inc. Multi-phase source/drain/gate spacer-epi formation
US9245883B1 (en) * 2014-09-30 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a FinFET device
KR102264656B1 (ko) * 2014-10-17 2021-06-14 삼성전자주식회사 게이트 코어들 및 핀 액티브 코어를 포함하는 반도체 소자 및 그 제조 방법
US9287362B1 (en) 2014-11-21 2016-03-15 International Business Machines Corporation Vertical field effect transistors with controlled overlap between gate electrode and source/drain contacts
US9337255B1 (en) 2014-11-21 2016-05-10 International Business Machines Corporation Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channels
US9799776B2 (en) * 2015-06-15 2017-10-24 Stmicroelectronics, Inc. Semi-floating gate FET
US9312383B1 (en) * 2015-08-12 2016-04-12 International Business Machines Corporation Self-aligned contacts for vertical field effect transistors
US9368572B1 (en) * 2015-11-21 2016-06-14 International Business Machines Corporation Vertical transistor with air-gap spacer
US9502407B1 (en) * 2015-12-16 2016-11-22 International Business Machines Corporation Integrating a planar field effect transistor (FET) with a vertical FET
US9437503B1 (en) 2015-12-22 2016-09-06 International Business Machines Corporation Vertical FETs with variable bottom spacer recess
US9761694B2 (en) * 2016-01-27 2017-09-12 International Business Machines Corporation Vertical FET with selective atomic layer deposition gate
US9607899B1 (en) 2016-04-27 2017-03-28 International Business Machines Corporation Integration of vertical transistors with 3D long channel transistors

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Publication number Publication date
US10074652B1 (en) 2018-09-11
US10283504B2 (en) 2019-05-07
DE112018000636B4 (de) 2021-12-09
US9853028B1 (en) 2017-12-26
WO2018193342A1 (en) 2018-10-25
GB201915887D0 (en) 2019-12-18
CN110520973A (zh) 2019-11-29
US20190181139A1 (en) 2019-06-13
US20180301451A1 (en) 2018-10-18
JP2020513160A (ja) 2020-04-30
DE112018000636T5 (de) 2019-11-14
US10438949B2 (en) 2019-10-08
GB2577185A (en) 2020-03-18
GB2577185B (en) 2020-11-04
JP7062682B2 (ja) 2022-05-06
DE112018008240B4 (de) 2026-02-19

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