CN110518103B - 半导体发光装置 - Google Patents

半导体发光装置 Download PDF

Info

Publication number
CN110518103B
CN110518103B CN201910525848.9A CN201910525848A CN110518103B CN 110518103 B CN110518103 B CN 110518103B CN 201910525848 A CN201910525848 A CN 201910525848A CN 110518103 B CN110518103 B CN 110518103B
Authority
CN
China
Prior art keywords
light
layer
emitting
semiconductor layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201910525848.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN110518103A (zh
Inventor
胜野弘
泽野正和
宫部主之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN110518103A publication Critical patent/CN110518103A/zh
Application granted granted Critical
Publication of CN110518103B publication Critical patent/CN110518103B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Devices (AREA)
CN201910525848.9A 2015-06-15 2016-03-09 半导体发光装置 Expired - Fee Related CN110518103B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015-120275 2015-06-15
JP2015120275A JP2017005191A (ja) 2015-06-15 2015-06-15 半導体発光装置
CN201610132725.5A CN106252490B (zh) 2015-06-15 2016-03-09 半导体发光装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201610132725.5A Division CN106252490B (zh) 2015-06-15 2016-03-09 半导体发光装置

Publications (2)

Publication Number Publication Date
CN110518103A CN110518103A (zh) 2019-11-29
CN110518103B true CN110518103B (zh) 2022-10-21

Family

ID=57517437

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201610132725.5A Expired - Fee Related CN106252490B (zh) 2015-06-15 2016-03-09 半导体发光装置
CN201910525848.9A Expired - Fee Related CN110518103B (zh) 2015-06-15 2016-03-09 半导体发光装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201610132725.5A Expired - Fee Related CN106252490B (zh) 2015-06-15 2016-03-09 半导体发光装置

Country Status (4)

Country Link
US (3) US9911899B2 (OSRAM)
JP (1) JP2017005191A (OSRAM)
CN (2) CN106252490B (OSRAM)
TW (1) TWI613837B (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102353570B1 (ko) * 2015-08-24 2022-01-20 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 구비한 발광 소자 패키지
KR102656815B1 (ko) * 2017-12-27 2024-04-15 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
KR20190127218A (ko) * 2018-05-04 2019-11-13 엘지이노텍 주식회사 반도체 소자 패키지 및 이를 포함하는 광조사장치
KR102653956B1 (ko) * 2018-08-21 2024-04-02 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
KR102575569B1 (ko) * 2018-08-13 2023-09-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
KR102575580B1 (ko) 2018-08-21 2023-09-06 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
JP7096489B2 (ja) * 2018-09-20 2022-07-06 日亜化学工業株式会社 半導体素子の製造方法
KR102704081B1 (ko) * 2019-01-09 2024-09-09 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101595570A (zh) * 2006-10-18 2009-12-02 皇家飞利浦电子股份有限公司 用于半导体发光装置的电接触件
CN102024892A (zh) * 2009-09-15 2011-04-20 丰田合成株式会社 Iii族氮化物半导体发光器件
JP2011198997A (ja) * 2010-03-19 2011-10-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP2011216524A (ja) * 2010-03-31 2011-10-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP2012195602A (ja) * 2012-05-31 2012-10-11 Toshiba Corp 半導体発光素子
JP2014140067A (ja) * 2014-04-03 2014-07-31 Toshiba Corp 半導体発光素子
CN104022202A (zh) * 2013-02-28 2014-09-03 日亚化学工业株式会社 半导体发光元件

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11214749A (ja) 1998-01-29 1999-08-06 Sanyo Electric Co Ltd 半導体発光装置
JPH11354845A (ja) 1998-06-10 1999-12-24 Matsushita Electron Corp ＧａＮ系化合物半導体発光素子
US7679097B2 (en) 2004-10-21 2010-03-16 Nichia Corporation Semiconductor light emitting device and method for manufacturing the same
JP4980615B2 (ja) 2005-02-08 2012-07-18 ローム株式会社 半導体発光素子およびその製法
JP2007103725A (ja) * 2005-10-05 2007-04-19 Toshiba Corp 半導体発光装置
US8008683B2 (en) 2008-10-22 2011-08-30 Samsung Led Co., Ltd. Semiconductor light emitting device
JP5304563B2 (ja) * 2009-09-15 2013-10-02 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
JP2011071444A (ja) 2009-09-28 2011-04-07 Toyoda Gosei Co Ltd 発光素子
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR101142965B1 (ko) * 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
JP5628064B2 (ja) * 2011-02-14 2014-11-19 スタンレー電気株式会社 光半導体素子
JP5050109B2 (ja) * 2011-03-14 2012-10-17 株式会社東芝 半導体発光素子
EP2722889B1 (en) * 2012-10-18 2018-03-21 LG Innotek Co., Ltd. Light emitting diode with improved efficiency though current spreading
JP5368620B1 (ja) * 2012-11-22 2013-12-18 株式会社東芝 半導体発光素子及びその製造方法
JP2014120669A (ja) * 2012-12-18 2014-06-30 Toshiba Corp 半導体発光素子

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101595570A (zh) * 2006-10-18 2009-12-02 皇家飞利浦电子股份有限公司 用于半导体发光装置的电接触件
CN102024892A (zh) * 2009-09-15 2011-04-20 丰田合成株式会社 Iii族氮化物半导体发光器件
JP2011198997A (ja) * 2010-03-19 2011-10-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP2011216524A (ja) * 2010-03-31 2011-10-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP2012195602A (ja) * 2012-05-31 2012-10-11 Toshiba Corp 半導体発光素子
CN104022202A (zh) * 2013-02-28 2014-09-03 日亚化学工业株式会社 半导体发光元件
JP2014140067A (ja) * 2014-04-03 2014-07-31 Toshiba Corp 半導体発光素子

Also Published As

Publication number Publication date
US20180145215A1 (en) 2018-05-24
JP2017005191A (ja) 2017-01-05
US20190051795A1 (en) 2019-02-14
CN106252490B (zh) 2019-07-09
US20160365481A1 (en) 2016-12-15
TWI613837B (zh) 2018-02-01
US10403790B2 (en) 2019-09-03
CN106252490A (zh) 2016-12-21
US9911899B2 (en) 2018-03-06
CN110518103A (zh) 2019-11-29
US10128408B2 (en) 2018-11-13
TW201644067A (zh) 2016-12-16

Similar Documents

Publication Publication Date Title
CN110518103B (zh) 半导体发光装置
CN106415859B (zh) 半导体发光元件及其制造方法
JP5659728B2 (ja) 発光素子
JP2015056650A (ja) 発光装置
CN105990487A (zh) 半导体发光元件
TWI314791B (en) Semiconductor light emitting device
CN105810790A (zh) 半导体发光元件及其制造方法
JPWO2020110783A1 (ja) 半導体レーザ装置
JP2017055020A (ja) 半導体装置の製造方法
JP2017054902A (ja) 半導体発光装置
JP5945736B2 (ja) 発光素子
CN105810781A (zh) 半导体发光元件、发光装置及半导体发光元件的制造方法
CN106257698B (zh) 半导体发光装置
JP4983398B2 (ja) 半導体レーザ素子
CN107221592B (zh) 发光元件
KR101611480B1 (ko) 반도체 발광소자
JP5433798B2 (ja) 半導体発光素子及び半導体発光装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20221021