CN110506093A - 包含两性表面活性剂的研磨用组合物 - Google Patents
包含两性表面活性剂的研磨用组合物 Download PDFInfo
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- CN110506093A CN110506093A CN201880024945.3A CN201880024945A CN110506093A CN 110506093 A CN110506093 A CN 110506093A CN 201880024945 A CN201880024945 A CN 201880024945A CN 110506093 A CN110506093 A CN 110506093A
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Abstract
本发明的课题是提供通过晶片的研磨工序可获得晶片的中心部与周边部(激光标记部分)的高低差小的平坦研磨面的研磨用组合物、以及使用了该研磨用组合物的晶片的制造方法。解决手段是一种研磨用组合物,其包含水、二氧化硅粒子、碱性物质、和式(1)所示的两性表面活性剂。(在式(1)中,R1为碳原子数10~20的烷基、或包含酰胺基的碳原子数1~5的烷基,R2和R3各自独立地为碳原子数1~9的烷基,X‑为包含羧酸根离子或磺酸根离子的碳原子数1~5的阴离子性有机基。)。二氧化硅粒子为具有5~100nm的平均一次粒径的二氧化硅粒子的基于水性分散体的二氧化硅粒子。一种晶片的制造方法,在晶片的研磨工序中,进行研磨直到晶片的中央部与周边部的高低差成为100nm以下为止。
Description
技术领域
本发明涉及晶片表面的研磨所使用的研磨用组合物,特别是涉及通过晶片的研磨工序没有晶片中央部与周边部(例如也称为激光标记部分)的高低差,用于形成平坦的研磨面的研磨用组合物。
背景技术
一般而言电子产业中的基板用晶片的制造方法由下述工序构成:1)将单晶铸锭进行切片而获得薄圆板状的晶片的切片工序;2)将该晶片的外周部进行倒棱的倒棱工序;3)将倒棱了的晶片进行平坦化的抛光工序;4)将抛光了的晶片的加工应变除去的蚀刻工序;5)将被蚀刻了的晶片的表面进行镜面化的研磨工序;以及6)将被研磨了的晶片洗涤的洗涤工序。
这些研磨剂中应用PVP、季铵盐、表面活性剂等各种添加剂。
公开了组合有聚合性树脂与胺化合物、季铵盐、甜菜碱等阳离子性化合物的研磨用组合物,关于上述聚合性树脂,例如可举出聚苯乙烯树脂、(甲基)丙烯酸系树脂、聚烯烃树脂、聚氯乙烯树脂、橡胶系树脂、聚酯树脂、聚酰胺树脂、聚缩醛树脂等,及作为热固性树脂的酚树脂、环氧树脂、氨基甲酸酯树脂、脲树脂、三聚氰胺树脂等(参照专利文献1、2)。
上述5)研磨工序通过一边将研磨液组合物供给到研磨垫表面,一边将作为被研磨物的晶片与研磨垫压接使其相对移动来进行。该研磨工序一般由1次研磨、2次研磨、最终研磨的多个阶段构成。1次研磨和2次研磨以将在抛光、蚀刻工序中产生的晶片表面的深的伤除去作为目的而进行。
另一方面,最终研磨以将在1次研磨和2次研磨后残存的微小的表面缺陷除去,高精度地平坦化作为目的而进行。
有时在该最终研磨工序后在晶片的中心部与周边部(也称为激光标记部分)产生高低差,这成为问题。
现有技术文献
专利文献
专利文献1:日本特开2004-204098
专利文献2:日本特开2004-247542
发明内容
发明所要解决的课题
本发明提供通过晶片的研磨工序可获得晶片的中心部与周边部(激光标记部分)的高低差小的平坦研磨面的研磨用组合物、以及使用了该研磨用组合物的晶片的制造方法。
用于解决课题的手段
本申请发明中,作为第1观点,是一种研磨用组合物,其包含水、二氧化硅粒子、碱性物质、和式(1)所示的两性表面活性剂。
(在式(1)中,R1为碳原子数10~20的烷基、或包含酰胺基的碳原子数1~5的烷基,R2和R3各自独立地为碳原子数1~9的烷基,X-为包含羧酸根离子或磺酸根离子的碳原子数1~5的阴离子性有机基。)
作为第2观点,是第1观点所述的研磨用组合物,上述酰胺基为具有碳原子数10~20的烷基的酰胺基。
作为第3观点,是第1观点所述的研磨用组合物,式(1)所示的两性表面活性剂为下述化合物:在式(1)中,R1为碳原子数10~20的烷基,X-为包含羧酸根离子的碳原子数1~5的阴离子性有机基,且R2和R3为甲基的化合物;或者在式(1)中,R1为包含具有碳原子数10~20的烷基的酰胺基的碳原子数1~5的烷基,X-为包含磺酸根离子的碳原子数1~5的阴离子性有机基,且R2和R3为甲基的化合物。
作为第4观点,是第1观点~第3观点中任一项所述的研磨用组合物,二氧化硅粒子为具有5~100nm的平均一次粒径的二氧化硅粒子处于水性分散体形态的二氧化硅粒子。
作为第5观点,是第1观点~第4观点中任一项所述的研磨用组合物,碱性物质为碱金属氢氧化物、铵盐、氢氧化季铵、有机胺、或碱金属碳酸盐。
作为第6观点,是第1观点~第5观点中任一项所述的研磨用组合物,其进一步包含螯合剂。
作为第7观点,是第1观点~第6观点中任一项所述的研磨用组合物,在研磨用组合物中,包含二氧化硅粒子0.05~50质量%、碱性物质0.01~30质量%、两性表面活性剂1~10000ppm,剩余部分为水。
作为第8观点,是一种晶片的制造方法,其包含下述工序:使用第1观点~第7观点中任一项所述的研磨用组合物对晶片进行研磨的工序。和
作为第9观点,是第8观点所述的晶片的制造方法,在晶片的研磨工序中,进行研磨直到晶片的中央部与周边部的高低差成为100nm以下为止。
发明的效果
对于本发明的研磨用组合物,通过晶片的研磨工序可以获得晶片的中心部与周边部(激光标记部分)的高低差小的平坦的研磨面。
在进行研磨以不发生该激光标记部分、所谓研磨端面处的研磨残留方面,研磨用组合物中包含的二氧化硅粒子和水以外的成分的作用大。在本发明中通过碱性物质与式(1)所示的两性表面活性剂的组合可以解决上述问题。
式(1)所示的两性表面活性剂具有在分子内具有基于季铵的阳离子部分、和基于阴离子结构的阴离子部分的分子内盐的结构。通过具有与构成阳离子部分的氮原子结合的R1、R2、R3的有机基之中,R1具有长链烃结构,R2和R3具有短链烃结构这样的不对称结构,可以解决上述问题。
具体实施方式
本申请发明为包含水、二氧化硅粒子、碱性物质、和式(1)所示的两性表面活性剂的研磨用组合物。
在式(1)中,R1为碳原子数10~20的烷基、或包含酰胺基的碳原子数1~5的烷基,R2和R3各自独立地为碳原子数1~9的烷基,X-为包含羧酸根离子或磺酸根离子的碳原子数1~5的阴离子性有机基。在X-的碳原子数1~5的阴离子性有机基中,烃部分可以具有羟基等取代基。
上述酰胺基可以为具有碳原子数10~20的烷基的酰胺基。
上述碳原子数1~5的烷基可举出例如,甲基、乙基、正丙基、异丙基、环丙基、正丁基、异丁基、仲丁基、叔丁基、正戊基、1-甲基-正丁基等。
碳原子数1~9的烷基可举出例如甲基、乙基、正丙基、异丙基、环丙基、正丁基、异丁基、仲丁基、叔丁基、正戊基、1-甲基-正丁基、辛基等。
此外,碳原子数10~20的烷基可举出例如碳原子数11的十一烷基、碳原子数12的月桂基、碳原子数13的十三烷基、碳原子数14的肉豆蔻基、碳原子数15的法呢烯基、碳原子数16的棕榈基、碳原子数17的十七烷基、碳原子数18的硬脂基等。
上述式(1)所示的两性表面活性剂可以使用甜菜碱型、烷基甜菜碱型、磺基甜菜碱型的甜菜碱化合物。
作为甜菜碱型化合物,可举出椰子油二甲基氨基乙酸甜菜碱(式(1-1)),作为烷基甜菜碱型化合物,可举出月桂基二甲基氨基乙酸甜菜碱(式(1-2)),作为磺基甜菜碱型化合物,可举出月桂酰胺基丙基羟基磺基甜菜碱(式(1-3))。
甜菜碱型化合物例如通过使椰子油脂肪酸(例如月桂酸)与二甲基氨基丙基胺加热缩合,使所得的生成物与氯乙酸钠反应而获得。
此外,烷基甜菜碱型化合物例如通过使叔烷基胺(例如月桂基二甲基胺)与氯乙酸钠反应而获得。
在上述式(1)所示的两性表面活性剂中,与甜菜碱型化合物相比,磺基甜菜碱化合物和烷基甜菜碱型化合物的效果最高。
在本发明中,可以优选使用在式(1)中,R1为碳原子数10~20的烷基,R2和R3为甲基,且X-为包含羧酸根离子的碳原子数1~5的阴离子的两性表面活性剂。
在晶片的研磨后的研磨面的评价中,对于使用了甜菜碱型化合物的研磨用组合物而言,晶片表面的中央部与周边部(激光标记部分)的高低差为100nm左右,但对于磺基甜菜碱化合物、烷基甜菜碱型化合物而言,它们的值能够降低至0~60nm,是更优选的。
在研磨用组合物中,式(1)所示的两性表面活性剂优选以1~10000ppm、100~5000ppm、或300~4000ppm的范围使用。
本发明所使用的二氧化硅粒子可以使用具有5~100nm的平均一次粒径的二氧化硅粒子处于水性分散体形态的二氧化硅粒子。这些水性分散体为二氧化硅溶胶,二氧化硅溶胶中的二氧化硅为本发明的研磨组合物中的二氧化硅粒子,二氧化硅溶胶中的水性介质可以置换成研磨用组合物中的水。研磨用组合物中的水来源于上述二氧化硅溶胶中的水,但除此以外可以加上作为稀释水而加入的水。
本发明所使用的二氧化硅粒子为由氮吸附法求出的平均一次粒径为5~100nm的胶态二氧化硅。如果平均一次粒径小于5nm则研磨速度变低,此外由于二氧化硅粒子的凝集易于发生,因此研磨液组合物的稳定性变低。如果平均一次粒径大于100nm则在晶片表面易于产生划伤,此外研磨面的平坦性变差。
在二氧化硅粒子被分散于水性介质而得的二氧化硅溶胶中包含0.5μm以上的粗大粒子的情况下,优选将该粗大粒子除去。粗大粒子的除去可举出强制沉降法、精密过滤法。精密过滤所使用的过滤器,有深层过滤器、褶皱过滤器、膜滤器、中空丝过滤器等,都可以使用。此外,过滤器的材质有棉、聚丙烯、聚苯乙烯、聚砜、聚醚砜、尼龙、纤维素、玻璃等,都可以使用。过滤器的过滤精度由绝对过滤精度(99.9%以上被捕捉的粒子的大小)表示,在上述二氧化硅粒子中,从生产效率(处理时间、过滤器的堵塞的程度等)的观点考虑,优选用绝对过滤精度0.5μm~1.0μm的过滤器进行处理。
上述二氧化硅粒子的含量相对于晶片的研磨用组合物的总质量为0.05~50质量%,优选为0.1~20质量%,进一步优选为5~10质量%。如果小于0.05质量%则研磨性能不能充分发挥,如果超过50质量%则研磨用组合物的稳定性变差。
本发明所使用的碱化合物可举出碱金属氢氧化物、铵盐、氢氧化季铵、有机胺、或碱金属碳酸盐。
作为上述碱金属氢氧化物,可举出氢氧化锂、氢氧化钠、氢氧化钾等。特别优选为氢氧化钠、氢氧化钾。
碱金属碳酸盐可举出碳酸锂、碳酸钠、碳酸钾、碳酸氢锂、碳酸氢钠、碳酸氢钾等。特别优选为碳酸钠、或碳酸钾。
作为铵盐,可举出氢氧化铵、碳酸铵、碳酸氢铵等。其中优选为氢氧化铵。
作为季铵盐,可举出氢氧化四甲基铵、氢氧化乙基三甲基铵、氢氧化二乙基二甲基铵、氢氧化三乙基甲基铵、氢氧化四乙基铵、氯化四甲基铵、氯化四乙基铵等。
作为上述有机胺,可举出甲基胺、二甲基胺、三甲基胺、乙基胺、二乙基胺、三乙胺、单乙醇胺、二乙醇胺、三乙醇胺、N-甲基乙醇胺、N-甲基-N,N-二乙醇胺、N,N-二甲基乙醇胺、N,N-二乙基乙醇胺、N,N-二丁基乙醇胺、乙二胺、六亚乙基二胺、乙基乙二胺哌嗪-六水合物、无水哌嗪、N-甲基哌嗪、羟基乙基哌嗪、N-氨基乙基哌嗪、1,3-丙烷二胺N,N-二甲基乙二胺、二亚乙基三胺、单异丙醇胺、二异丙醇胺、三异丙醇胺等,其中优选为单乙醇胺、乙二胺、或哌嗪。
上述碱化合物的优选含量根据所使用的碱化合物而不同,但相对于本发明的晶片的研磨用组合物的总质量为0.01~30质量%。在碱化合物为碱金属的无机盐的情况下优选为0.01~1.0质量%,在季铵盐的情况下优选为0.01~5.0质量%,在有机胺的情况下优选为0.01~1.0质量%。如果该碱化合物的含量小于0.01质量%,则作为加工促进剂的作用不充分,相反即使超过30质量%,也不期待研磨性能的进一步提高。此外,也能够并用上述碱化合物中的2种以上。
在本发明中可以进一步添加螯合物。作为螯合物,可举出例如,乙二胺四乙酸盐、乙二胺二琥珀酸盐、氮川三乙酸盐、二亚乙基三胺五乙酸盐、三亚乙基四胺六乙酸盐、羟基乙烷膦酸盐等。螯合物的添加量相对于本发明的晶片的研磨用组合物的总质量为0.005~1.0质量%。
可以应用本发明的晶片的研磨用组合物的所谓晶片,为硅晶片、SiC晶片、GaN晶片、GaAs晶片、GaP晶片、玻璃晶片、铝晶片、蓝宝石晶片等。
对晶片进行研磨时的研磨装置有单面研磨方式和双面研磨方式,本发明的晶片用研磨液组合物可以在任一装置中使用。
通过使用本发明的研磨用组合物进行研磨,从而可以制造通过晶片的研磨工序可获得晶片的中心部与周边部(激光标记部分)的高低差小的平坦研磨面的晶片。
实施例
研磨特性的评价方法
通过以下方法对市售的硅晶片进行研磨。
1)研磨用组合物调制
制造由氮吸附法求出的平均一次粒径40nm的胶态二氧化硅(基于二氧化硅溶胶的二氧化硅粒子)20质量%、作为碱性化合物的氢氧化乙基三甲基铵氢氧化物(ETMAH,试剂)1.0质量%、碳酸钾(K2CO3)2.0质量%、作为螯合剂的乙二胺四乙酸钠(试剂)0.7质量%、下述所示的比例的添加量的各种添加剂、剩余部分为水那样的研磨用组合物。
2)研磨稀释液
将研磨用组合物用水稀释成规定浓度,搅拌10分钟而制成研磨用组合物。
3)研磨条件
研磨机:浜井产业社制双面研磨机13BF
荷重:150g/cm2
上定盘转速:7rpm
下定盘转速:20rpm
研磨垫:发泡聚氨酯制研磨垫
研磨稀释液的供给量:6.0L/分钟
研磨时间:30分钟
硅晶片:直径200mm,传导型P型,结晶方位为<100>,电阻率小于100Ω·cm
4)洗涤条件
在进行水洗涤后,用加温到40℃的SC1洗涤液(29%氨水:30%过氧化氢水:水的重量比=1:1:28的洗涤液)进行洗涤,将晶片表面的杂质除去。
5)激光标记高度的测定方法
使用ケーエルエーテンコール社制触针式轮廓仪P-16,对于对一定宽度(5mm)进行扫描而获得的粗糙度曲线,测定晶片表面的最高部分和最低部分的高度的差值。由“激光标记高度”表示的值为100nm以下表示良好的结果,为100nm以上表示不期望的结果。
<实施例1>
在上述研磨用组合物调制中研磨用组合物所包含的添加剂为月桂基二甲基氨基乙酸甜菜碱(日油社制,商品名ニッサンアノンBL-SF,式(1-2)),以添加量在研磨用组合物中成为630ppm的方式加入。加入水,制成研磨用组合物,对硅晶片进行了研磨。接着进行洗涤,进行激光标记高度的测定,结果,激光标记高度小于100nm,获得了良好的结果。
<实施例2>
在上述研磨用组合物调制中将月桂基二甲基氨基乙酸甜菜碱(日油社制,商品名ニッサンアノンBL-SF,式(1-2))以其含量成为2100ppm的方式添加,除此以外,与实施例1同样地进行,结果,激光标记高度小于100nm,获得了良好的结果。
<实施例3>
在上述研磨用组合物调制中将椰子油二甲基氨基乙酸甜菜碱(日油社制,商品名ニッサンアノンBF,式(1-1))以其含量成为630ppm的方式添加,除此以外,与实施例1同样地进行,结果,激光标记高度小于100nm,获得了良好的结果。
<实施例4>
在上述研磨用组合物调制中将椰子油二甲基氨基乙酸甜菜碱(日油社制,商品名ニッサンアノンBF,式(1-1))以其含量成为2100ppm的方式添加,除此以外,与实施例1同样地进行,结果,激光标记高度小于100nm,获得了良好的结果。
<实施例5>
在上述研磨用组合物调制中将月桂酰胺基丙基羟基磺基甜菜碱(川研ファインケミカル社制,商品名ソフタゾリンLSB,式(1-3))以其含量成为630ppm的方式添加,除此以外,与实施例1同样地进行,结果,激光标记高度小于100nm,获得了良好的结果。
<实施例6>
在上述研磨用组合物调制中将月桂酰胺基丙基羟基磺基甜菜碱(川研ファインケミカル社制,商品名ソフタゾリンLSB,式(1-3))以其含量成为2100ppm的方式添加,除此以外,与实施例1同样地进行,结果,激光标记高度小于100nm,获得了良好的结果。
<比较例1>
在上述研磨用组合物调制中研磨用组合物所包含的添加剂为四丙基氢氧化铵(アクロスオルガニクス社制,式(2-1)),以添加量在研磨用组合物中成为630ppm的方式加入。加入水,制成研磨用组合物,对硅晶片进行了研磨。接着进行洗涤,进行了激光标记高度的测定,结果,激光标记高度为1000nm,是不理想的。
<比较例2>
将四丁基氢氧化铵(东京应化工业(株)制,式(2-2))以其含量成为630ppm的方式添加,除此以外,与比较例1同样地进行,结果,激光标记高度为270nm,是不理想的。
<比较例3>
将N-月桂酰-N-甲基甘氨酸·Na(日油社制,商品名フィレットL,式(2-3))以其含量成为630ppm的方式添加,除此以外,与比较例1同样地进行,结果,激光标记高度为380nm,是不理想的。
<比较例4>
将脂肪酸酰胺醚硫酸酯·Na(日油社制,商品名サンアミドCF-3,式(2-4))以其含量成为630ppm的方式添加,除此以外,与比较例1同样地进行,结果,激光标记高度为510nm,是不理想的。
<比较例5>
将椰子油脂肪酸二乙醇酰胺(第一工业制药(株)制,商品名ダイヤノールCDE,式(2-5))以其含量成为630ppm的方式添加,除此以外,与比较例1同样地进行,结果,激光标记高度为690nm,是不理想的。
<比较例6>
将2-吡咯烷酮(关东化学(株)制,式(2-6))以其含量成为630ppm的方式添加,除此以外,与比较例1同样地进行,结果,激光标记高度为860nm,是不理想的。
<比较例7>
将焦谷氨酸(アクロスオルガニクス社制,式(2-7))以其含量成为630ppm的方式添加,除此以外,与比较例1同样地进行,结果,激光标记高度为130nm,是不理想的。
<比较例8>
将甘油(日油(株)制,商品名グリセリン85,式(2-8))以其含量成为630ppm的方式添加,除此以外,与比较例1同样地进行,结果,激光标记高度为260nm,是不理想的。
<比较例9>
将聚甘油(阪本药品工业(株)制,商品名ポリグリセリン#310,式(2-9))以其含量成为630ppm的方式添加,除此以外,与比较例1同样地进行,结果,激光标记高度为460nm,是不理想的。
<比较例10>
将聚氧乙烯聚甘油基醚(阪本药品工业(株)制,商品名SC-E1500,式(2-10))以其含量成为630ppm的方式添加,除此以外,与比较例1同样地进行,结果,激光标记高度为270nm,是不理想的。
其中,m+n+o+p=13
式(2-10)
产业可利用性
通过使用本发明的研磨用组合物进行研磨,从而可以制造通过晶片的研磨工序可获得晶片的中心部与周边部(激光标记部分)的高低差小的平坦研磨面的晶片。
Claims (9)
1.一种研磨用组合物,其包含水、二氧化硅粒子、碱性物质、和式(1)所示的两性表面活性剂,
在式(1)中,R1为碳原子数10~20的烷基、或包含酰胺基的碳原子数1~5的烷基,R2和R3各自独立地为碳原子数1~9的烷基,X-为包含羧酸根离子或磺酸根离子的碳原子数1~5的阴离子性有机基。
2.根据权利要求1所述的研磨用组合物,所述酰胺基为具有碳原子数10~20的烷基的酰胺基。
3.根据权利要求1所述的研磨用组合物,式(1)所示的两性表面活性剂为下述化合物:
在式(1)中,R1为碳原子数10~20的烷基,X-为包含羧酸根离子的碳原子数1~5的阴离子性有机基,且R2和R3为甲基的化合物;或者
在式(1)中,R1为包含具有碳原子数10~20的烷基的酰胺基的碳原子数1~5的烷基,X-为包含磺酸根离子的碳原子数1~5的阴离子性有机基,且R2和R3为甲基的化合物。
4.根据权利要求1~3中任一项所述的研磨用组合物,二氧化硅粒子为具有5~100nm的平均一次粒径的二氧化硅粒子处于水性分散体形态的二氧化硅粒子。
5.根据权利要求1~4中任一项所述的研磨用组合物,碱性物质为碱金属氢氧化物、铵盐、氢氧化季铵、有机胺或碱金属碳酸盐。
6.根据权利要求1~5中任一项所述的研磨用组合物,其进一步包含螯合剂。
7.根据权利要求1~6中任一项所述的研磨用组合物,在研磨用组合物中,包含二氧化硅粒子0.05~50质量%、碱性物质0.01~30质量%、两性表面活性剂1~10000ppm,剩余部分为水。
8.一种晶片的制造方法,其包含下述工序:使用权利要求1~7中任一项所述的研磨用组合物对晶片进行研磨的工序。
9.根据权利要求8所述的晶片的制造方法,在晶片的研磨工序中,对晶片进行研磨直到晶片的中央部与周边部的高低差成为100nm以下为止。
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JP2013251561A (ja) * | 2008-02-01 | 2013-12-12 | Fujimi Inc | 研磨用組成物及びそれを用いた研磨方法 |
TW201638290A (zh) * | 2015-02-19 | 2016-11-01 | Fujimi Inc | 研磨用組成物 |
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JP3841995B2 (ja) * | 1999-12-28 | 2006-11-08 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
US6776696B2 (en) * | 2002-10-28 | 2004-08-17 | Planar Solutions Llc | Continuous chemical mechanical polishing process for polishing multiple conductive and non-conductive layers on semiconductor wafers |
JP2004247542A (ja) | 2003-02-14 | 2004-09-02 | Kao Corp | 精密部品用基板の製造方法 |
JP2004204098A (ja) | 2002-12-26 | 2004-07-22 | Kao Corp | 研磨液組成物 |
US20100001229A1 (en) * | 2007-02-27 | 2010-01-07 | Hitachi Chemical Co., Ltd. | Cmp slurry for silicon film |
JP2009099819A (ja) * | 2007-10-18 | 2009-05-07 | Daicel Chem Ind Ltd | Cmp用研磨組成物及び該cmp用研磨組成物を使用したデバイスウェハの製造方法 |
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CN102666760B (zh) * | 2009-11-11 | 2015-11-25 | 可乐丽股份有限公司 | 化学机械抛光用浆料以及使用其的基板的抛光方法 |
KR101178620B1 (ko) * | 2010-12-23 | 2012-08-30 | 주식회사 케이씨텍 | 기계적인 물성이 약한 절연막질에 대한 고단차 연마 평탄화 슬러리 및 첨가제 조성물 |
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JP2017190363A (ja) | 2016-04-11 | 2017-10-19 | 花王株式会社 | サファイア板用研磨液組成物 |
US10377014B2 (en) * | 2017-02-28 | 2019-08-13 | Ecolab Usa Inc. | Increased wetting of colloidal silica as a polishing slurry |
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JP2013251561A (ja) * | 2008-02-01 | 2013-12-12 | Fujimi Inc | 研磨用組成物及びそれを用いた研磨方法 |
US20120252214A1 (en) * | 2008-03-27 | 2012-10-04 | Fujifilm Corporation | Polishing liquid and polishing method |
TW201638290A (zh) * | 2015-02-19 | 2016-11-01 | Fujimi Inc | 研磨用組成物 |
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JPWO2018193916A1 (ja) | 2020-04-23 |
TW201843265A (zh) | 2018-12-16 |
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