CN110504326A - 萧特基二极管 - Google Patents

萧特基二极管 Download PDF

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CN110504326A
CN110504326A CN201810473287.8A CN201810473287A CN110504326A CN 110504326 A CN110504326 A CN 110504326A CN 201810473287 A CN201810473287 A CN 201810473287A CN 110504326 A CN110504326 A CN 110504326A
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schottky diode
doped region
trap
those
doped regions
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CN110504326B (zh
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杨承桦
林克峰
李明宗
黄世腾
王智充
李秋德
林淑雯
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United Microelectronics Corp
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Abstract

本发明公开一种萧特基二极管，包含有一萧特基接面、一欧姆接面、一第一绝缘结构以及多个掺杂区。萧特基接面，包含一第一阱位于一基底中，以及一第一电极接触第一阱。欧姆接面，包含一接面区域位于第一阱中，以及一第二电极接触接面区域。第一绝缘结构设置于基底中且将萧特基接面及欧姆接面隔离。多个掺杂区位于第一阱中以及萧特基接面下方，其中此些掺杂区彼此分离且构成一同心圆的俯视轮廓。

Description

萧特基二极管
技术领域
本发明涉及一种萧特基二极管，且特别是涉及一种具有相同间距的掺杂区的萧特基二极管。
背景技术
萧特基二极管(Schottky Diode)是利用金属与半导体基板接触而形成萧特基接触(Schottky Contact)，由于金属中没有少数载流子，故萧特基二极管的特性是其电流是由多数载流子(即电子)移动所产生。多数载流子由半导体穿过接面而注入金属的传导带，由于此过程不涉及多数载流子与少数载流子的结合(随机反应而且需要时间较长)，因此萧特基二极管停止导通的速度会比P-N接面二极管速度要快，再加上萧特基二极管的导通电压降较低，这些特性使得萧特基二极管可快速地切换于导通与不导通之间而不会造成过长的时间延迟，因而被广泛地应用于电子装置中。
发明内容
本发明提出一种萧特基二极管，其具有相同间距的掺杂区，能均匀化晶片中各部位的萧特基二极管的电性品质。
本发明提供一种萧特基二极管，包含有一萧特基接面、一欧姆接面、一第一绝缘结构以及多个掺杂区。萧特基接面，包含一第一阱位于一基底中，以及一第一电极接触第一阱。欧姆接面，包含一接面区域位于第一阱中，以及一第二电极接触接面区域。第一绝缘结构设置于基底中且将萧特基接面及欧姆接面隔离。多个掺杂区位于第一阱中以及萧特基接面下方，其中此些掺杂区彼此分离且构成一同心圆的俯视轮廓。
基于上述，本发明提出一种萧特基二极管，其包含一萧特基接面、一欧姆接面、一第一绝缘结构及多个掺杂区。萧特基接面，包含一第一阱位于一基底中，以及一第一电极接触第一阱。欧姆接面，包含一接面区域位于第一阱中，以及一第二电极接触接面区域。第一绝缘结构设置于基底中且将萧特基接面及欧姆接面隔离。掺杂区则设置于萧特基接面下方，且各掺杂区彼此分离且构成一同心圆的俯视轮廓。因而，各掺杂区可具有相同间距，以能均匀化晶片中各部位的萧特基二极管的电性品质，例如均匀的漏电流值及击穿电压等。
附图说明
图1为本发明优选实施例中萧特基二极管的剖面示意图；
图2为本发明优选实施例中萧特基二极管的掺杂区及第一阱的俯视示意图；
图3为本发明优选实施例中萧特基二极管的掺杂区及第一阱的俯视示意图；
图4为本发明更佳实施例中萧特基二极管的剖面示意图。
主要元件符号说明
10、10a、10b、10c：第一绝缘结构
10’、144a、164a：内侧
20：金属硅化物阻挡块
100、200：萧特基二极管
110：基底
112：埋入阱
114：第一阱
114a：第一部分
114b：第二部分
114c：第三部分
122：第一电极
124：第二电极
130：接面区域
140：掺杂区
142、142a、142b、142c：内掺杂区
144：外围掺杂区
144b、164b：外侧
150：其他掺杂区
160：第一掺杂区
162：第一内掺杂区
164：第一外围掺杂区
C：欧姆接面
d：间距
E1：阳极
E2：阴极
S：萧特基接面
具体实施方式
图1绘示本发明优选实施例中萧特基二极管的剖面示意图。如图1所示，一基底110例如是一硅基底、一含硅基底、一三五族覆硅基底(例如GaN-on-silicon)、一石墨烯覆硅基底(graphene-on-silicon)或一硅覆绝缘(silicon-on-insulator，SOI)基底等半导体基底。选择性的形成一埋入阱112于基底110中，作为防止上方电流向下漏电之用。形成一第一阱114于基底110中以及埋入阱112上。第一阱114可具有一第一导电型，而埋入阱112具有一第二导电型。第二导电型与第一导电型具有相反电性。第一导电型可例如为N型，第二导电型可例如为P型，但本发明不以此为限。一第一电极122位于基底110上并直接接触第一阱114。如此，构成一萧特基接面，其包含第一阱114位于基底110中，以及第一电极122接触第一阱114。再者，接面区域130则形成于第一阱114中，以及一第二电极124位于基底110上并直接接触接面区域130，因而构成一欧姆接面。接面区域130可例如具有第一导电型，且接面区域130的掺杂浓度高于第一阱114的掺杂浓度，但本发明不以此为限。在本实施例中，第一电极122及第二电极124为金属硅化物，且第一电极122及第二电极124以同一制作工艺同时形成，但本发明不限于此。在一例中，第一电极122可例如连接一阳极E1，而第二电极124可连接一阴极E2。
第一绝缘结构10形成于基底110中，以将萧特基接面S及欧姆接面C隔离。第一绝缘结构10可例如为浅沟隔离(shallow trench isolation,STI)结构，其例如以一浅沟隔离制作工艺形成，但本发明不限于此。第一绝缘结构10与第一电极122分隔。在本实施例中，金属硅化物阻挡块20则设置于基底110上以及第一绝缘结构10与第一电极122之间，用以确保第一绝缘结构10与第一电极122分隔。
多个掺杂区140则形成于第一阱114中以及萧特基接面S下方。相较于第一阱114具有第一导电型，掺杂区140则具有第二导电型。掺杂区140可包含多个内掺杂区142以及一外围掺杂区144围绕内掺杂区142，其中内掺杂区142彼此分隔，而外围掺杂区144直接接触第一绝缘结构10。较佳者，金属硅化物阻挡块20仅重叠外围掺杂区144的一部分，但外围掺杂区144的其他部分自金属硅化物阻挡块20突出并接触第一电极122。另外，其他掺杂区150则也可形成于外围的第一绝缘结构10之间。
在此强调，本发明的各掺杂区140必然具有相同间距d，以均匀化晶片中各部位的萧特基二极管100的电性品质，例如均匀化晶片中各部位的萧特基二极管100(例如中心及边缘的萧特基二极管100)的漏电流及击穿电压等。为使本发明的掺杂区140具有相同间距d，以下提出一实施例的掺杂区140的布局图，但本发明不限于此。
图2绘示本发明一优选实施例中萧特基二极管的掺杂区及第一阱的俯视示意图，其中图2中的a图为萧特基二极管的掺杂区及第一阱的俯视示意图，图2中的b图为图2中的a图的局部放大图。图3绘示本发明一优选实施例中萧特基二极管的掺杂区及第一阱的俯视示意图，其中图3中的a图仅绘示萧特基二极管的掺杂区的俯视示意图，而图3中的b图仅绘示萧特基二极管的第一阱的俯视示意图。请参阅图2～图3。本发明的掺杂区140彼此分离且构成一同心圆的俯视轮廓。换言之，本发明的掺杂区140具有相同间距d。详细而言，掺杂区140具有多个内掺杂区142以及一个外围掺杂区144围绕内掺杂区142。各内掺杂区142(例如内掺杂区142a/142b/142c)彼此分隔且具有相同间距d。在一优选的实施例中，各内掺杂区142的俯视轮廓为圆环。外围掺杂区144具有一内侧144a以及一外侧144b。在一优选实施例中，内侧144a具有一圆形俯视轮廓，而外侧144b具有一矩形俯视轮廓。如此，外围掺杂区144的内侧144a与内掺杂区142也可具有相同间距d，以符合本发明的各掺杂区140必然具有相同间距的精神。再者，外围掺杂区144的外侧144b则较佳具有矩形俯视轮廓，因而可相容于其他邻接的半导体布局，以利于晶片上的各半导体元件以最小面积排列，进而提升晶片的集成度。在此一提，当外围掺杂区144的外侧144b具有矩形俯视轮廓时，如图1所示的直接接触外侧144b的第一绝缘结构10的一内侧10’则较佳也具有一矩形俯视轮廓。然而，在另一实施例中，第一绝缘结构10的内侧10’也可具有一圆形俯视轮廓，以仅在部分区域接触外围掺杂区144的外侧144b。如图3中的b图所示，第一阱114具有一矩形俯视轮廓或者具有一同心矩形的俯视轮廓，第一阱114在俯视轮廓上可包含一第一部分114a、一第二部分114b以及一第三部分114c。掺杂区140与第一部分114a重叠。第二部分114b则位于图1的第一绝缘结构10a与第一绝缘结构10b之间，接面区域130位于第二部分114b中；第三部分114c则位于图1的第一绝缘结构10b与第一绝缘结构10c之间，其他掺杂区150位于第三部分114c中，但本发明不以此为限。
再者，以下再提出本发明的更佳实施例，其可降低图1的萧特基二极管100的漏电流。图4绘示本发明更佳实施例中萧特基二极管的剖面示意图。如图4所示，本发明通过设置第一掺杂区160于各掺杂区140中，以降低晶片中各部位的萧特基二极管200的漏电流，其中第一掺杂区160具有一掺杂浓度高于掺杂区140的掺杂浓度。在一优选的实施例中，第一掺杂区160与对应的掺杂区140具有相同形状。较佳者，第一掺杂区160与对应的掺杂区140具有相同的俯视轮廓。详细而言，第一掺杂区160包含多个第一内掺杂区162以及一个第一外围掺杂区164围绕第一内掺杂区162。第一内掺杂区162则位于对应的各内掺杂区142中，而第一外围掺杂区164则位于对应的外围掺杂区144中。较佳者，第一内掺杂区164的俯视轮廓也为圆环，且第一外围掺杂区164具有一内侧164a以及一外侧164b，其中内侧164a具有一圆形俯视轮廓，而外侧164b具有一矩形俯视轮廓。在本实施例中，第一外围掺杂区164直接接触第一绝缘结构10。在一优选实施例中，金属硅化物阻挡块20仅重叠第一外围掺杂区164的一部分，但第一外围掺杂区164的其他部分自金属硅化物阻挡块20突出，以有效降低漏电流，但本发明不以此为限。
承上，形成各掺杂区及各元件的步骤可视实际需要而定，且各掺杂区及各元件的形成方法为本领域所熟知。例如，可依序形成埋入阱112、第一阱114、第一绝缘结构10、掺杂区140、其他掺杂区150、接面区域130、金属硅化物阻挡块20、第一电极122与第二电极124等；埋入阱112、第一阱114、掺杂区140、其他掺杂区150、接面区域130可以掺杂制作工艺形成，第一绝缘结构10以浅沟隔离制作工艺形成，金属硅化物阻挡块20以沉积制作工艺形成，而第一电极122与第二电极124以自对准金属硅化物制作工艺形成等，在此不再赘述。
综上所述，本发明提出一种萧特基二极管，其包含一萧特基接面、一欧姆接面、一第一绝缘结构及多个掺杂区。萧特基接面，包含一第一阱位于一基底中，以及一第一电极接触第一阱。欧姆接面，包含一接面区域位于第一阱中，以及一第二电极接触接面区域。第一绝缘结构设置于基底中且将萧特基接面及欧姆接面隔离。掺杂区则设置于萧特基接面下方，且各掺杂区彼此分离且构成一同心圆的俯视轮廓。因而，各掺杂区可具有相同间距，以能均匀化晶片中各部位的萧特基二极管的电性品质，例如均匀的漏电流值及击穿电压等。
再者，本发明也可再形成第一掺杂区于各掺杂区中，以进一步降低漏电流。较佳者，金属硅化物阻挡块可形成于第一绝缘结构与第一电极之间，用以确保第一绝缘结构与第一电极分隔。并且，金属硅化物阻挡块仅重叠第一掺杂区的第一外围掺杂区的一部分，但第一外围掺杂区的其他部分自金属硅化物阻挡块突出。
以上所述仅为本发明的优选实施例，凡依本发明权利要求所做的均等变化与修饰，都应属本发明的涵盖范围。

Claims (20)

1.一种萧特基二极管，其特征在于，包含有：
萧特基接面，包含第一阱位于一基底中，以及第一电极接触该第一阱；
欧姆接面，包含接面区域位于该第一阱中，以及第二电极接触该接面区域；
第一绝缘结构，设置于该基底中且将该萧特基接面及该欧姆接面隔离；以及
多个掺杂区，位于该第一阱中以及该萧特基接面下方，其中该些掺杂区彼此分离且构成一同心圆的俯视轮廓。
2.如权利要求1所述的萧特基二极管，其中该些掺杂区包含内掺杂区以及外围掺杂区围绕该些内掺杂区。
3.如权利要求2所述的萧特基二极管，其中该些内掺杂区的俯视轮廓包含圆环。
4.如权利要求3所述的萧特基二极管，其中该外围掺杂区具有内侧以及外侧，其中该内侧具有圆形俯视轮廓，而该外侧具有矩形俯视轮廓。
5.如权利要求2所述的萧特基二极管，其中该些内掺杂区具有相同间距。
6.如权利要求1所述的萧特基二极管，其中该第一阱与该接面区域具有第一导电型，而该些掺杂区具有第二导电型，其中该第二导电型与该第一导电型具有相反电性。
7.如权利要求2所述的萧特基二极管，还包含：
第一掺杂区，设置于各该掺杂区中，其中该些第一掺杂区具有一掺杂浓度高于该些掺杂区。
8.如权利要求7所述的萧特基二极管，其中该些第一掺杂区与对应的该些掺杂区具有相同形状。
9.如权利要求7所述的萧特基二极管，其中该些第一掺杂区包含第一内掺杂区以及第一外围掺杂区围绕该些第一内掺杂区。
10.如权利要求9所述的萧特基二极管，其中该些第一内掺杂区的俯视轮廓包含圆环。
11.如权利要求9所述的萧特基二极管，其中该第一外围掺杂区具有内侧以及外侧，其中该内侧具有圆形俯视轮廓，而该外侧具有矩形俯视轮廓。
12.如权利要求9所述的萧特基二极管，其中该第一外围掺杂区直接接触该第一绝缘结构。
13.如权利要求7所述的萧特基二极管，其中该第一电极以及该第二电极包含金属硅化物。
14.如权利要求13所述的萧特基二极管，其中该第一绝缘结构与该第一电极分隔。
15.如权利要求14所述的萧特基二极管，还包含：
金属硅化物阻挡块，设置于该第一绝缘结构与该第一电极之间。
16.如权利要求15所述的萧特基二极管，其中该金属硅化物阻挡块仅重叠该第一外围掺杂区的一部分，但该第一外围掺杂区的其他部分自该金属硅化物阻挡块突出。
17.如权利要求15所述的萧特基二极管，其中该金属硅化物阻挡块仅重叠该外围掺杂区的一部分，但该外围掺杂区的其他部分自该金属硅化物阻挡块突出。
18.如权利要求1所述的萧特基二极管，其中该第一阱具有一矩形俯视轮廓。
19.如权利要求18所述的萧特基二极管，其中该第一阱具有一同心矩形的俯视轮廓。
20.如权利要求1所述的萧特基二极管，其中该第一绝缘结构的一内侧具有一圆形俯视轮廓或一矩形俯视轮廓。
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