CN110461764B - 薄膜材料转移方法 - Google Patents

薄膜材料转移方法 Download PDF

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Publication number
CN110461764B
CN110461764B CN201880021060.8A CN201880021060A CN110461764B CN 110461764 B CN110461764 B CN 110461764B CN 201880021060 A CN201880021060 A CN 201880021060A CN 110461764 B CN110461764 B CN 110461764B
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CN
China
Prior art keywords
dimensional material
strain
support layer
target substrate
substrate
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Expired - Fee Related
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CN201880021060.8A
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English (en)
Chinese (zh)
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CN110461764A (zh
Inventor
阿维德·维贾亚拉格万
克里斯坦·伯格
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University of Manchester
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University of Manchester
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065—Mechanical properties
    • B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/0013—Structures dimensioned for mechanical prevention of stiction, e.g. spring with increased stiffness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00952—Treatments or methods for avoiding stiction during the manufacturing process not provided for in groups B81C1/00928 - B81C1/00944
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/017—Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
    • B81C2201/0194—Transfer of a layer from a carrier wafer to a device wafer the layer being structured
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Micromachines (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
CN201880021060.8A 2017-03-28 2018-03-21 薄膜材料转移方法 Expired - Fee Related CN110461764B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1704950.3A GB201704950D0 (en) 2017-03-28 2017-03-28 Thin film material transfer method
GB1704950.3 2017-03-28
PCT/GB2018/050733 WO2018178634A1 (en) 2017-03-28 2018-03-21 Thin film material transfer method

Publications (2)

Publication Number Publication Date
CN110461764A CN110461764A (zh) 2019-11-15
CN110461764B true CN110461764B (zh) 2023-11-24

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CN201880021060.8A Expired - Fee Related CN110461764B (zh) 2017-03-28 2018-03-21 薄膜材料转移方法

Country Status (7)

Country Link
US (1) US11180367B2 (https=)
EP (1) EP3601153B1 (https=)
JP (1) JP7168991B2 (https=)
KR (2) KR20190129057A (https=)
CN (1) CN110461764B (https=)
GB (1) GB201704950D0 (https=)
WO (1) WO2018178634A1 (https=)

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CN110174197A (zh) * 2019-05-28 2019-08-27 北京旭碳新材料科技有限公司 石墨烯基压阻式压力传感器及其制备方法
CN111537116B (zh) * 2020-05-08 2021-01-29 西安交通大学 一种石墨烯压力传感器及其制备方法
CN111952322B (zh) * 2020-08-14 2022-06-03 电子科技大学 一种具有周期可调屈曲结构的柔性半导体薄膜及制备方法
CN112349610B (zh) * 2020-10-10 2022-07-01 广东工业大学 一种人工控制单层ws2面内各向异性的方法
CN112357878B (zh) * 2020-11-23 2024-04-19 华东师范大学 一种二维材料电子器件及其制备方法和应用
CN112964404B (zh) * 2021-02-02 2022-08-19 武汉纺织大学 一种一致性强的用于智能织物的微型压力传感装置
GB2603905B (en) * 2021-02-17 2023-12-13 Paragraf Ltd A method for the manufacture of an improved graphene substrate and applications therefor
CN112978711B (zh) * 2021-03-23 2022-07-22 北京科技大学 一种大面积转移石墨炔薄膜的方法
CN113441094B (zh) * 2021-05-21 2023-06-20 安徽大学 一种硼烯-石墨烯复合气凝胶及制备与应用
EP4105168B1 (en) * 2021-06-18 2025-01-22 Eberhard Karls Universität Tübingen Method for forming a three-dimensional van-der-waals multilayer structure by stacking two-dimensional layers and structure formed by this method
CN113264522B (zh) * 2021-06-21 2022-08-23 松山湖材料实验室 一种二维材料的转移方法
CN114497238B (zh) * 2022-01-17 2025-11-21 青岛科技大学 一种二维原子层材料应变场控制方法
WO2023183526A1 (en) * 2022-03-24 2023-09-28 Massachusetts Institute Of Technology Controlled delamination through surface engineering for nonplanar fabrication
CN114858319B (zh) * 2022-04-26 2023-03-24 中国科学院上海微系统与信息技术研究所 一种拉力传感器的制备方法及拉力传感器
US12391570B2 (en) 2022-05-23 2025-08-19 City University Of Hong Kong Methods of the ultra-clean transfer of two-dimensional materials
CN115140705B (zh) * 2022-07-04 2024-08-16 中国人民解放军国防科技大学 一种二维材料悬空释放装置及方法
CN116750711B (zh) * 2023-08-01 2025-12-09 莱斯能特(苏州)科技有限公司 Mems热膜式流量传感器芯片及其制备方法
CN118183615B (zh) * 2024-03-07 2024-09-10 中国矿业大学 一种二维材料表面褶皱阵列结构的制备方法
CN118670596B (zh) * 2024-08-21 2024-11-12 辽宁意达石油工程有限公司 一种高灵敏度柔性压力传感器及其制备方法

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CN102519657A (zh) * 2011-11-22 2012-06-27 上海交通大学 二维矢量柔性热敏微剪切应力传感器及其阵列和制备方法
CN103308498A (zh) * 2013-05-14 2013-09-18 中国科学院物理研究所 一种用于二维层状纳米材料的方向可控单轴应变施加装置
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CN105115413A (zh) * 2015-07-07 2015-12-02 中国矿业大学 一种模量匹配的二维平面应变场测试传感元件及其制作方法

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CN102519657A (zh) * 2011-11-22 2012-06-27 上海交通大学 二维矢量柔性热敏微剪切应力传感器及其阵列和制备方法
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CN103308498A (zh) * 2013-05-14 2013-09-18 中国科学院物理研究所 一种用于二维层状纳米材料的方向可控单轴应变施加装置
CN105115413A (zh) * 2015-07-07 2015-12-02 中国矿业大学 一种模量匹配的二维平面应变场测试传感元件及其制作方法

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JP2020520788A (ja) 2020-07-16
GB201704950D0 (en) 2017-05-10
KR102689459B1 (ko) 2024-07-26
US11180367B2 (en) 2021-11-23
KR20230124101A (ko) 2023-08-24
JP7168991B2 (ja) 2022-11-10
EP3601153B1 (en) 2024-09-04
CN110461764A (zh) 2019-11-15
EP3601153A1 (en) 2020-02-05
WO2018178634A1 (en) 2018-10-04
US20200048082A1 (en) 2020-02-13
KR20190129057A (ko) 2019-11-19

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