CN110460312A - A kind of low-noise amplifier of Broadband emission impedance stabilization - Google Patents
A kind of low-noise amplifier of Broadband emission impedance stabilization Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
- H03F1/483—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
- H03F1/486—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with IC amplifier blocks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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Abstract
The present invention relates to a kind of low-noise amplifiers of Broadband emission impedance stabilization, it is characterized by: being equipped with input matching stage, noise cancellation grade and output matching stage, wherein, the input matching stage includes: the first transistor (M1), second transistor (M2) and third transistor (M3)；The grid of the first transistor (M1) is connect with the grid of the grid of second transistor (M2), the first end of first resistor (R1), input signal (IN) and the 4th transistor (M4)；The drain electrode of the second transistor (M2) is connect with the first end of the drain electrode of the first transistor (M1), the second end of first resistor (R1) and first capacitor (C1)；The source electrode of the second transistor (M2) is connect with the drain electrode of third transistor (M3).The noise cancellation grade includes: the 4th transistor (M4), the 5th transistor (M5) and the 6th transistor (M6).
Description
Technical field
The present invention relates to technical field of radio frequency integrated circuits more particularly to a kind of broadband for working in 0.5~1.5GHz are high
The matched low-noise amplifier of output impedance.
Background technique
With the development of wireless communication, low-noise amplifier become Modern wireless communication, radar, electronic countermeasure, wave beam and
At a very important part in equal application, it is usually used in the front end of reception system, inhibits noise dry while amplified signal
It disturbs, improves system sensitivity.If high performance low-noise amplifier is connected in receiver system front end, in low-noise amplifier
The sufficiently high situation of gain under, can suppress the noise of late-class circuit, the noise coefficient of entire receiver will primarily depend upon
The noise of amplifier.If the noise of receiver reduces, sensitivity will be greatly improved, for entirely receiving system level
It improves, also plays conclusive effect.
Presently, there are a variety of wideband low noise amplifier design methods.Global negative feedback structure can mitigate impedance matching and
Severe trade-off relation between noise coefficient, but gain is lower and needs multi-stage cascade, it will lead to unstable problem.Grid altogether
Amplifier realizes Broadband Matching using the mutual conductance of input pipe, and noise coefficient and working frequency and bandwidth relationship are little and relatively flat
Smooth, circuit has fabulous reverse isolation performance and the higher linearity, but noise coefficient is higher.Resistive shunt-feedback common source is put
Big device reduces the quality factor of input terminal to realize bandwidth broadning and gain flattening, but resistance itself can introduce noise, meeting
Deteriorate the noise characteristic of input terminal.Distributed amplifier needs multiple transistor cascade and a large amount of inductance, or needs high quality
Transmission line increases area and power consumption, improves cost.
And the output impedance of LNA has a significant impact to the design of true delay unit in traditional Beam synthesis.If LNA
Output impedance change that fluctuating is big in entire operating frequency range, then the delay that will lead to true delay unit rises and falls in entire frequency
It comes and go in band, reduces the effect of Beam synthesis.The matched method of Conventional impedance often applies smith circle diagram, utilizes inductance
Capacitor realizes impedance matching, but this method there is a problem of one it is serious be exactly that area consumption is bigger.Therefore how
The problem of between tradeoff area and output impedance, becomes particularly important.
Summary of the invention
The purpose of the present invention is to provide a kind of low-noise amplifiers of Broadband emission impedance stabilization, have high output impedance
Matching capacity so that post-module will not because prime module impedance variations caused by performance variation, using noise cancellation technique,
With lower noise, the higher linearity, high-gain and lower power consumption are combined.And structure is simple, has smaller
Chip area.The present invention realizes that design has reproducibility using CMOS 0.18um technique.In order to solve the above technical problems,
The embodiment of the present invention provides a kind of low-noise amplifier of Broadband emission impedance stabilization, comprising: input matching stage, noise cancellation grade
With output matching stage.It inputs matching stage and uses CMOS complementation common gate structure, realize input matching in wideband, utilize circuit multiplexer skill
Art saves power consumption.Noise cancellation grade utilizes the working principle of common source and common grid amplifier and source follower, offsets input matching device
Channel noise, to reduce the noise coefficient of entire circuit.Output matching stage uses load for the source follower of CMOS tube,
Realize output matching stable and excellent in wideband.Technical solution is as follows:
The input matching stage includes: the first transistor (M1), second transistor (M2) and third transistor (M3)；
Wherein, the grid of the grid Yu second transistor (M2) of the first transistor (M1), first resistor (R1)
One end, input signal (IN) are connected with the grid of the 4th transistor (M4)；
The drain electrode of the second transistor (M2) and the drain electrode of the first transistor (M1), first resistor (R1) second end and
The first end of first capacitor (C1) connects；
The source electrode of the second transistor (M2) is connect with the drain electrode of third transistor (M3).
The noise cancellation grade includes: the 4th transistor (M4), the 5th transistor (M5) and the 6th transistor (M6)；
Wherein, the drain electrode of the 4th transistor (M4) is connect with the source electrode of the 5th transistor (M5)；
The drain electrode of 5th transistor (M5) connects with the first end of the second capacitor (C2), the source electrode of the 6th transistor (M6)
It connects；
The first end of the grid of 6th transistor (M6) and the second end of first capacitor (C1) and second resistance (R2)
Connection.
The output matching stage includes: the 7th transistor (M7) and the 8th transistor (M8)；
Wherein, the drain electrode of the 7th transistor (M7) and the source electrode of the 8th transistor (M8) and output signal (OUT) connect
It connects；
The first end of the grid of 8th transistor (M8) and the second end of the second capacitor (C2) and 3rd resistor (R3)
Connection.
The source electrode of the third transistor (M3), the substrate of third transistor (M2), the substrate of second transistor (M2),
The second end and 3rd resistor (R3) of the drain electrode of six transistors (M6), the drain electrode of the 8th transistor (M8) and second resistance (R2)
Second end connect with first voltage source (V1)；
The grid of the third transistor (M3) is connect with the second voltage source (V2)；
The grid of 5th transistor (M5) is connect with tertiary voltage source (V3)；
The grid of 7th transistor (M7) is connect with the 4th voltage source (V4)；
The source electrode of the first transistor (M1), the substrate of the first transistor (M1), the source electrode of the 4th transistor (M4),
The substrate of four transistors (M4), the substrate of the 5th transistor (M5), the substrate of the 6th transistor (M6), the 7th transistor (M7)
The substrate of source electrode, the substrate of the 7th transistor (M7) and the 8th transistor (M8) is connect with ground terminal；
The second transistor (M2) and third transistor (M3) are PMOS transistor, remaining is NMOS transistor.
The first voltage source (V1) provides DC offset voltage, and voltage value is 1.8V.
Compared with prior art, the beneficial effect of the technical solution of the embodiment of the present invention is:
(1) present invention uses noise cancellation technique, in the good input matching of bandwidth realization and lower noise.
(2) present invention has high output impedance matching capacity, so that post-module will not change because of this module output impedance
Cause the variation of performance.
(3) device used in the present invention mainly includes metal-oxide-semiconductor, resistance and capacitor, and integrated circuit is free of inductance, to save
Chip area is saved, is reduced costs.
(4) realization of the invention uses mainstream CMOS processes, can be with the common digital baseband circuit for using CMOS technology
It is integrated on same chip, system on chip easy to accomplish.
(5) present invention is realized using deep-submicron 0.18umCMOS technique, the power supply of 1.8V low supply voltage, power consumption consumption
It is lower.
Detailed description of the invention
Fig. 1 is a kind of circuit diagram of the low-noise amplifier of Broadband emission impedance stabilization of the present invention；
Fig. 2 is a kind of simulation result of the input reflection coefficient of the low-noise amplifier of Broadband emission impedance stabilization of the present invention
Figure.
Fig. 3 is a kind of simulation result of the output reflection coefficient of the low-noise amplifier of Broadband emission impedance stabilization of the present invention
Figure.
Fig. 4 is a kind of simulation result diagram of the gain of the low-noise amplifier of Broadband emission impedance stabilization of the present invention；
Fig. 5 is a kind of simulation result diagram of the noise coefficient of the low-noise amplifier of Broadband emission impedance stabilization of the present invention；
Fig. 6 is a kind of simulation result diagram of the linearity of the low-noise amplifier of Broadband emission impedance stabilization of the present invention.
Specific embodiment
The embodiment of the present invention has high output impedance by providing a kind of low-noise amplifier of Broadband emission impedance stabilization
Matching capacity so that post-module will not because prime module impedance variations caused by performance variation, using noise cancellation technique,
With lower noise, the higher linearity, high-gain and lower power consumption are combined.For make the invention solves technology
Problem, technical solution and advantage are clearer, are described in detail below in conjunction with the accompanying drawings and the specific embodiments.
The input matching stage includes: the first transistor M1, second transistor M2 and third transistor M3；Wherein, described
Grid and the grid of second transistor M2, the first end of first resistor R1, the input signal IN and the 4th of the first transistor M1 is brilliant
The grid of body pipe M4 connects；The drain electrode of the second transistor M2 and the drain electrode of the first transistor M1, first resistor R1 second
End is connected with the first end of first capacitor C1；The source electrode of the second transistor M2 is connect with the drain electrode of third transistor M3.
In the embodiment of the present invention, using the current multiplexing structure of resistive shunt-feedback, provided using transistor transconductance defeated
Enter impedance, guarantees that there are good input matching properties in wider frequency band, and under identical bias current, stacking
Single tube mutual conductance is increased to the sum of two pipe mutual conductances by NMOS transistor M1 and PMOS transistor M2, is mentioned in the case where not increasing power consumption
High circuit gain.The structure can also improve the robustness of circuit, can reduce ghost effect, temperature and technique change to power
The influence of gain and input resistant matching.
The noise cancellation grade includes: the 4th transistor M4, the 5th transistor M5 and the 6th transistor M6；Wherein, described
The drain electrode of 4th transistor M4 is connect with the source electrode of the 5th transistor M5；The drain electrode of the 5th transistor M5 and the second capacitor C2
First end, the 6th transistor M6 source electrode connection；The grid of the 6th transistor M6 and the second end of first capacitor C1 and
The first end of second resistance R2 connects.
In the embodiment of the present invention, the thermal noise of transistor M1 generates with Y the noise voltage with phase in nodes X, and source follows
The noise voltage reverse phase of X point is put the noise voltage same Xiang Fang great, cascode transistors M4 and transistor M5 of Y point by device M6
Greatly.It is cancelled at the first end of the second capacitor C2.Input signal IN generates reversed useful signal in nodes X and Y, and source follows
Device M6 amplifies the useful signal arc in phase of Y point, and cascode transistors M4 and transistor M5 are electric by the useful signal of X point
Press reverse phase amplification.Amplified at the first end of the second capacitor C2 by in-phase stacking.While offsetting noise, increase useful signal
Gain.
The output matching stage includes: the 7th transistor M7 and the 8th transistor M8；Wherein, the 7th transistor M7
Drain electrode connect with the source electrode of the 8th transistor M8 and output signal OUT；The grid and the second capacitor of the 8th transistor M8
The second end of C2 is connected with the first end of 3rd resistor R3.
In the embodiment of the present invention, increases transistor M7 and transistor M8 and be used to do output impedance matching, it is brilliant by adjusting
The breadth length ratio control transistor M7 and transistor M8 of body pipe equivalent resistance, so that the equivalent resistance of transistor M7 and transistor M8
Parallel value is to need matched impedance value, to realize good impedance matching function.
In the embodiment of the present invention, substrate, the second transistor of the source electrode of the third transistor M3, third transistor M2
The substrate of M2, the drain electrode of the 6th transistor M6, the drain electrode of the 8th transistor M8 and the second end and 3rd resistor of second resistance R2
The second end of R3 is connect with first voltage source V1；The grid of the third transistor M3 is connect with the second voltage source V2；It is described
The grid of 5th transistor M5 is connect with tertiary voltage source V3；The grid of the 7th transistor M7 and the 4th voltage source V4 connect
It connects；Source electrode, the substrate of the first transistor M1, the source electrode of the 4th transistor M4, the 4th transistor M4 of the first transistor M1
Substrate, the substrate of the 5th transistor M5, the substrate of the 6th transistor M6, the 7th transistor M7 source electrode, the 7th transistor M7
Substrate and the substrate of the 8th transistor M8 connect with ground terminal.
Herein using the macro CMOS 0.18um technique of China, simulating, verifying is carried out to circuit using Cadence RF Spectre.
Fig. 2 is the simulation result of the low-noise amplifier input reflection coefficient of Broadband emission impedance stabilization of the present invention.
It can thus be seen that in 0.5~1.5GHz frequency range, S11< -15 show low-noise amplifier of the invention in entire frequency
Good input matching is realized in band.
Fig. 3 is the simulation result of the low-noise amplifier output reflection coefficient of Broadband emission impedance stabilization of the present invention.
It can thus be seen that in 0.5~1.5GHz frequency range, S22< -34 show low-noise amplifier of the invention in entire frequency
Good output matching is realized in band.
Fig. 4 is the simulation result of the low-noise amplifier noise coefficient of Broadband emission impedance stabilization of the present invention.Thus
As can be seen that noise coefficient shows that low noise of the invention is put in 3.64~3.78dB in 0.5~1.5GHz frequency range
Big device has good noise coefficient in entire frequency band.
Fig. 5 is the simulation result of the low-noise amplifier gain of Broadband emission impedance stabilization of the present invention.It is possible thereby to
Find out, S21Unit be 10.2dB~11.6dB, show low-noise amplifier of the invention gain with higher.
Fig. 6 is the simulation result of the low-noise amplifier linearity of Broadband emission impedance stabilization of the present invention.In frequency
Defeated place 1dB compression point is -3.21411dBm when for 1GHz, shows that low-noise amplifier of the invention has the good linearity.
Above embodiments are only to illustrate circuit structure of the invention, rather than its limitations.In addition, according to above-mentioned configuration
Illustrative embodiments can capable field technique personnel understanding and implementation；It can be to circuit structure documented by foregoing embodiments
It modifies, or part of circuit structure is equivalently replaced；And these are modified or replaceed, and do not make related circuit
The essence of structure is detached from the essential characteristic of technical solution of various embodiments of the present invention.The scope of the present invention should be solved according to claim
It releases.
Claims (4)
1. a kind of low-noise amplifier of Broadband emission impedance stabilization, it is characterised in that: be equipped with input matching stage, noise cancellation grade
With output matching stage, wherein
The input matching stage includes: the first transistor (M1), second transistor (M2) and third transistor (M3)；Described first
The grid of transistor (M1) and the grid of second transistor (M2), the first end of first resistor (R1), input signal (IN) and the
The grid of four transistors (M4) connects；The drain electrode of the second transistor (M2) and drain electrode, first electricity of the first transistor (M1)
The second end of resistance (R1) is connected with the first end of first capacitor (C1)；The source electrode and third transistor of the second transistor (M2)
(M3) drain electrode connection.
The noise cancellation grade includes: the 4th transistor (M4), the 5th transistor (M5) and the 6th transistor (M6)；
Wherein, the drain electrode of the 4th transistor (M4) is connect with the source electrode of the 5th transistor (M5)；5th transistor
(M5) drain electrode is connect with the source electrode of the first end of the second capacitor (C2), the 6th transistor (M6)；6th transistor (M6)
Grid connect with the first end of the second end of first capacitor (C1) and second resistance (R2)；
The output matching stage includes: the 7th transistor (M7) and the 8th transistor (M8)；The leakage of 7th transistor (M7)
Pole is connect with the source electrode of the 8th transistor (M8) and output signal (OUT)；The grid of 8th transistor (M8) and the second electricity
The second end for holding (C2) is connected with the first end of 3rd resistor (R3).
2. the low-noise amplifier of Broadband emission impedance stabilization according to claim 1, which is characterized in that the third is brilliant
The source electrode of body pipe (M3), the substrate of third transistor (M2), second transistor (M2) substrate, the 6th transistor (M6) leakage
The second end of pole, the second end of the drain electrode of the 8th transistor (M8) and second resistance (R2) and 3rd resistor (R3) is with first
Voltage source (V1) connection；
The grid of the third transistor (M3) is connect with the second voltage source (V2)；
The grid of 5th transistor (M5) is connect with tertiary voltage source (V3)；
The grid of 7th transistor (M7) is connect with the 4th voltage source (V4)；
The source electrode of the first transistor (M1), the substrate of the first transistor (M1), the source electrode of the 4th transistor (M4), the 4th crystalline substance
The source of the substrate of body pipe (M4), the substrate of the 5th transistor (M5), the substrate of the 6th transistor (M6), the 7th transistor (M7)
The substrate of pole, the substrate of the 7th transistor (M7) and the 8th transistor (M8) is connect with ground terminal.
3. frequency mixer according to claim 2, which is characterized in that the second transistor (M2) and third transistor (M3)
It is PMOS transistor, remaining is NMOS transistor.
4. frequency mixer according to claim 3, which is characterized in that the first voltage source (V1) provides direct current biasing electricity
Pressure, and voltage value is 1.8V.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113746441A (en) * | 2021-07-13 | 2021-12-03 | 天津大学 | Broadband SiGe BiCMOS low noise amplifier |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299685A (en) * | 2007-12-26 | 2011-12-28 | 联发科技股份有限公司 | Amplifier and the method of amplifying signal |
| CN103117712A (en) * | 2013-01-29 | 2013-05-22 | 天津大学 | Complementary metal-oxide-semiconductor (CMOS) high gain broad band low noise amplifier |
| US20150171798A1 (en) * | 2013-12-16 | 2015-06-18 | Motorola Solutions, Inc | Switchable multi-output low-noise amplifier with distortion cancellation |
| CN106385239A (en) * | 2016-09-09 | 2017-02-08 | 中国计量大学 | Gain-adjustable CMOS (Complementary Metal-Oxide-Semiconductor Transistor) broadband low-noise amplifier |
| CN107196611A (en) * | 2017-04-21 | 2017-09-22 | 天津大学 | Broadband single-ended transfer difference low-noise amplifier |
| CN108880483A (en) * | 2018-07-12 | 2018-11-23 | 安徽矽磊电子科技有限公司 | A kind of broad band amplifier of noise feedforward cancellation |
-
2019
- 2019-06-27 CN CN201910568545.5A patent/CN110460312A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299685A (en) * | 2007-12-26 | 2011-12-28 | 联发科技股份有限公司 | Amplifier and the method of amplifying signal |
| CN103117712A (en) * | 2013-01-29 | 2013-05-22 | 天津大学 | Complementary metal-oxide-semiconductor (CMOS) high gain broad band low noise amplifier |
| US20150171798A1 (en) * | 2013-12-16 | 2015-06-18 | Motorola Solutions, Inc | Switchable multi-output low-noise amplifier with distortion cancellation |
| CN106385239A (en) * | 2016-09-09 | 2017-02-08 | 中国计量大学 | Gain-adjustable CMOS (Complementary Metal-Oxide-Semiconductor Transistor) broadband low-noise amplifier |
| CN107196611A (en) * | 2017-04-21 | 2017-09-22 | 天津大学 | Broadband single-ended transfer difference low-noise amplifier |
| CN108880483A (en) * | 2018-07-12 | 2018-11-23 | 安徽矽磊电子科技有限公司 | A kind of broad band amplifier of noise feedforward cancellation |
Non-Patent Citations (2)
| Title |
|---|
| F. BRUCCOLERI: "Wide-band_CMOS_low-noise_amplifier_exploiting_thermal_noise_canceling", 《IEEE JOURNAL OF SOLID-STATE CIRCUITS》 * |
| 唐学锋: "基于噪声抵消技术的宽带低噪声放大器设计", 《微电子学与计算机》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113746441A (en) * | 2021-07-13 | 2021-12-03 | 天津大学 | Broadband SiGe BiCMOS low noise amplifier |
| CN113746441B (en) * | 2021-07-13 | 2023-10-20 | 天津大学 | Broadband SiGe BiCMOS Low Noise Amplifier |
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Application publication date: 20191115 |
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| WD01 | Invention patent application deemed withdrawn after publication |