CN107196611A - Broadband single-ended transfer difference low-noise amplifier - Google Patents
Broadband single-ended transfer difference low-noise amplifier Download PDFInfo
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- CN107196611A CN107196611A CN201710266674.XA CN201710266674A CN107196611A CN 107196611 A CN107196611 A CN 107196611A CN 201710266674 A CN201710266674 A CN 201710266674A CN 107196611 A CN107196611 A CN 107196611A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
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Abstract
The present invention relates to one kind 0.1~1.2GHz broadbands single-ended transfer difference low-noise amplifier, including：Matching stage circuit and noise cancellation level circuit are inputted, the input matching stage circuit, its input receives the signal (IN) of signal input part, produces the two paths of signals of opposite in phase, be output to the noise cancellation level circuit of rear class by high-pass filter respectively；The noise cancellation level circuit, noise cancellation level circuit has three inputs, the two-way output of two output ends, wherein two-way input connection input matching stage, another road input receives the signal (IN) of signal input part, output two paths of differential signals (OUT+/OUT).
Description
Technical field
The present invention is technical field of radio frequency integrated circuits, and in particular to one kind 0.1~1.2GHz broadbands single-ended transfer difference is low
Noise amplifier.
Background technology
With the development of radio communication, effect ever more important of the radio frequency reception technology in dual-use field.Broadband leads to
News system is the development trend of current wireless communication technique, is also the focus studied both at home and abroad[1][2].It presently, there are a variety of broadbands
Low-noise amplifier design method.Cathode-input amplifier realizes Broadband Matching, noise coefficient and work frequency using the mutual conductance of input pipe
Rate and bandwidth relationship less relatively flat, circuit have fabulous reverse isolation performance and the higher linearity, but noise system
Number is higher[3].Global negative feedback structure can relax trade-off relation severe between impedance matching and noise coefficient, but gain compared with
It is low and need multi-stage cascade, it will the problem of causing unstable[4].Resistive shunt-feedback common-source amplifier reduces the product of input
Prime factor is so as to realize bandwidth broadning and gain flattening, but resistance can introduce noise in itself, and the noise that can deteriorate input is special
Property[5].Distributed amplifier needs multiple transistor cascade and substantial amounts of inductance, or needs high-quality transmission line, adds area
And power consumption, improve cost[6]。
In the design of radio-frequency transmitter, for suppression common mode noise, interport isolation is improved, it is mixed frequently with Kilbert
Frequency device.But the signal received from antenna is single-ended signal, and general bandpass filter and low-noise amplifier are all single-ended
Mouth structure, therefore need balun to carry out the processing that single-ended signal switchs to differential signal.Passive balun typically utilizes coaxial line, microstrip line
Deng being coupled and phase shift, have the disadvantage to have serious loss of signal, area very big and deteriorate system noise.Active balun is to utilize
The working characteristics of transistor realizes the effect of single-ended transfer difference.There is the structure of several frequently seen active balun at present.It is wherein most simple
Single is single-transistor, the load by carefully designing its source electrode and drain electrode can be achieved single turn it is difunctional, but because output is parasitic
Effect, the structure is not suitable for broadband application[7].The structure of feedback differential pair, has the disadvantage because the presence that R/L/C compensates loop makes
The mismatch for obtaining gain-phase depends on frequency, and power consumption is higher[8].CS-CG pairs, it has lower power consumption and well isolation
Degree, but phase error is larger[9]。
Existing wideband low noise amplifier is difficult to while realize good input matching and very low noise, and most offices
Be limited to single ended input Single-end output and can only be with barron structure cascade operation, this can increase the complexity of interstage matched, introduce volume
Outer noise, chip area is larger.
Bibliography：
【1】CMOS wideband low noise amplifiers design [J] the microelectronics of neat triumphant based on noise cancellation technique, 2012,
42(5):622-626.
【2】Li C F,Chou S C,Lai C M,et al.A feedforward noise and distortion
cancellation technique for CMOS broadband LNA-mixer[C]//Solid-State Circuits
Conference.IEEE,2014:337-340.
【3】Arshad S,Ramzan R,Muhammad K,et al.A sub-10mW,noise cancelling,
wideband LNA for UWB applications[J].AEU-International Journal of Electronics
and Communications,2014, 69(1):109-118.
【4】Nejdel A.Flexible Receivers in CMOS for Wireless Communication[J]
.2015.
【5】Perumana B G,Zhan J H C,Taylor S S,et al.Resistive-Feedback CMOS
Low-Noise Amplifiers for Multiband Applications[J].2008,56(5):1218-1225.
【6】Parvizi M,Allidina K,El-Gamal M N.A Sub-mW,Ultra-Low-Voltage,
Wideband Low-Noise Amplifier Design Technique[J].IEEE Transactions on Very
Large Scale Integration Systems,2015, 23(6):1111-1122.
【7】Azevedo F,Mendes L,Fialho V,et al.A 5GHz/1.8V CMOS active balun
integrated with LNA[J].2008.
【8】Joo S,Choi T Y,Kim J Y,et al.A 3-to-5GHz UWB LNA with a low-power
balanced active balun[C]//Radio Frequency Integrated Circuits Symposium,
2009.Rfic.IEEE Xplore,2009:303-306.
【9】Yuan S,Zhao J,Li Y.Design and simulation of an improved wideband
low noise amplifier with an active balun[C]//International Conference on
Automatic Control and Artificial Intelligence.2012:786-789.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of single turn of broadband that can be operated in 0.1~1.2GHz frequency ranges is double
Low-noise amplifier, noise cancellation technique and active balun technology are applied in same circuit, are realized simultaneously in broadband good
Good input matching and low-noise performance, while there is the function of single ended input difference output, it is simple in construction, it can make smaller
Chip, can CMOS 0.18um techniques realize, design have reproducibility.Technical scheme is as follows：
A kind of broadband single-ended transfer difference low-noise amplifier, including：Input matching stage circuit and noise cancellation level circuit, institute
Input matching stage circuit is stated, its input receives the signal (IN) of signal input part, produce the two paths of signals of opposite in phase, respectively
The noise cancellation level circuit of rear class is output to by high-pass filter；
The noise cancellation level circuit, noise cancellation level circuit has three inputs, and two output ends, wherein two-way is defeated
Enter the two-way output of connection input matching stage, another road input receives the signal (IN) of signal input part, output two-pass DINSAR letter
Number (OUT+/OUT-)；
The input matching stage circuit includes：The first transistor (M1), second transistor (M2), third transistor (M3),
4th transistor (M4), the 5th transistor (M5)；Wherein, the grid of the first transistor (M1) respectively with second transistor
(M2) grid, the second end of the first electric capacity (C1), the first end of the first end of first resistor (R1) and the 6th electric capacity (C6) connect
Connect；
The drain electrode of described the first transistor (M1) drain electrode respectively with second transistor (M2), the of first resistor (R1)
The first end connection at two ends, the first end of the 3rd electric capacity (C3) and the 4th electric capacity (C4)；
The source electrode of described second transistor (M2) respectively with the drain electrode of third transistor (M3) and the second electric capacity (C2)
Second end is connected；
The grid of 4th transistor (M4) respectively with the first end of second resistance (R2) and the 3rd electric capacity (C3)
Two ends are connected；
The drain electrode of 4th transistor (M4) respectively with the drain electrode of the 5th transistor (M5) and the 5th electric capacity (C5)
One end is connected.
The noise cancellation level circuit includes：6th transistor (M6), the 7th transistor (M7), the 8th transistor (M8),
9th transistor (M9), the tenth transistor (M10), the 11st transistor (M11)；
The grid of wherein described 6th transistor (M6) respectively with the first end of the 5th resistance and the 6th electric capacity (C6)
Two ends are connected；
The drain electrode of 6th transistor (M6) is connected with the source electrode of the 7th transistor (M7)；
The drain electrode of 7th transistor (M7) source electrode respectively with the 8th transistor (M8), the first of the 7th electric capacity (C7)
The first end of end and the 8th electric capacity (C8) is connected；
The grid of 8th transistor (M8) and the second end of 3rd resistor (R3) and the second end of the 4th electric capacity (C4)
Connection；
The grid of 9th transistor (M9) respectively with the first end of the 6th resistance (R6) and the 7th electric capacity (C7)
Two ends are connected；
The drain electrode of 9th transistor (M9) is connected with the source electrode of the tenth transistor (M10)；
The source electrode and the 9th electric capacity (C9) of the drain electrode of tenth transistor (M10) respectively with the 11st transistor (M11)
First end connection；
The grid of 11st transistor (M11) respectively with the second end of the 4th resistance (R4) and the 5th electric capacity (C5)
Second end is connected.
The grid of the third transistor (M3) and the grid of the 5th transistor (M5) are connected with first voltage source (V1)；
Second end at the second end of the second resistance (R2), the second end of the 5th resistance (R5) and the 6th resistance (R6) is equal
It is connected with the second voltage source (V2)；
The source electrode of the third transistor (M3), the source electrode of the 5th transistor (M5), the drain electrode of the 8th transistor (M8),
Drain electrode, the first end of the second electric capacity (C2), the first end of 3rd resistor (R3) and the 4th resistance of 11 transistors (M11)
(R4) first end is connected with tertiary voltage source (V3)；
The source electrode of the first transistor (M1), the source electrode of the 4th transistor (M4), the source electrode of the 6th transistor (M6) and
The source electrode of 9th transistor (M9) is connected with earth terminal.
The signal input part (IN) connects the first end of the first electric capacity (C1)；
Second end of the 8th electric capacity (C8) connects the first signal output part (OUT+)；
The second end connection secondary signal output end (OUT-) of 9th electric capacity (C9).
Compared with prior art, the beneficial effect of the technical scheme of the embodiment of the present invention is：
(1) present invention uses noise cancellation technique, is matched and relatively low noise in the input of bandwidth realization well.
(2) active balun technology is incorporated into noise cancellation technique by the present invention, rather than after low-noise amplifier individually
Increase the active balun of one-level, reduce the complexity of interstage matched, and avoid the noise that is brought by balun and match it is bad caused by
Gain loss.
(3) device used in the present invention mainly includes metal-oxide-semiconductor, resistance and electric capacity, and integrated circuit is free of inductance, so as to save
Chip area is saved, cost is reduced.
(4) present invention is realized using deep-submicron 0.18umCMOS techniques, and 1.8V low supply voltages are powered, the consumption of its power consumption
It is relatively low.
(5) realization of the invention uses mainstream CMOS processes, can be with the common digital baseband circuit using CMOS technology
It is integrated on same chip, easily realizes system on chip.
Brief description of the drawings
Fig. 1 is the circuit structure diagram of low-noise amplifier of the present invention；
Fig. 2 is the simulation result figure of the noise coefficient of low-noise amplifier of the present invention；
Fig. 3 is the simulation result figure of the S parameter of low-noise amplifier of the present invention；
Fig. 4 is the simulation result figure of the two-port phase of output signal of low-noise amplifier of the present invention；
Fig. 5 is the simulation result figure of the two-port output gain signal of low-noise amplifier of the present invention；
Fig. 6 is the simulation result figure of the linearity of low-noise amplifier of the present invention.
Embodiment
To make the technical problem to be solved in the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing and tool
Body embodiment is described in detail.
As shown in figure 1, the input matching stage circuit includes：The first transistor (M1), second transistor (M2), the 3rd is brilliant
Body pipe (M3), the 4th transistor (M4), the 5th transistor (M5)；
Wherein, grid, the first electric capacity (C1) of the grid of the first transistor (M1) respectively with second transistor (M2)
The second end, the first end connection of the first end of first resistor (R1) and the 6th electric capacity (C6)；
The drain electrode of described the first transistor (M1) drain electrode respectively with second transistor (M2), the of first resistor (R1)
The first end connection at two ends, the first end of the 3rd electric capacity (C3) and the 4th electric capacity (C4)；
The source electrode of described second transistor (M2) respectively with the drain electrode of third transistor (M3) and the second electric capacity (C2)
Second end is connected；
The grid of 4th transistor (M4) respectively with the first end of second resistance (R2) and the 3rd electric capacity (C3)
Two ends are connected；
The drain electrode of 4th transistor (M4) respectively with the drain electrode of the 5th transistor (M5) and the 5th electric capacity (C5)
One end is connected.
In embodiments of the invention, the first transistor (M1), second transistor (M2) and first resistor (R1) constitute resistance
The current multiplexing structure of parallel feedback, provides input impedance, it is ensured that in wider frequency band using complementary common gate transistor transconductance
Interior to have good input matching properties, under identical bias current, the NMOS tube and PMOS of stacking increase single tube mutual conductance
Greatly to two pipe mutual conductance sums, circuit gain is improved in the case where not increasing power consumption.The structure can also improve the robustness of circuit,
The influence of ghost effect, temperature and technique change to power gain and input resistant matching can be reduced.Input stage transistor
M1 and M2 noise current flows through first resistor (R1) and the internal resistance of source to form same phase noise voltage in X and Y points, while by
In the anti-phase amplification characteristic of common-source amplifier, X and Y points have anti-phase useful signal voltage, the pass of this difference exactly noise cancellation
Key.The common-source amplifier that M4 and M5 is constituted realizes the output of complementary common gate the input as noise cancellation level after anti-phase amplification
One of, it is the basis to form single ended input difference output.
As shown in figure 1, the noise cancellation level circuit includes：6th transistor (M6), the 7th transistor (M7), the 8th is brilliant
Body pipe (M8), the 9th transistor (M9), the tenth transistor (M10), the 11st transistor (M11)；
The grid of wherein described 6th transistor (M6) respectively with the first end of the 5th resistance and the 6th electric capacity (C6)
Two ends are connected；
The drain electrode of 6th transistor (M6) is connected with the source electrode of the 7th transistor (M7)；
The drain electrode of 7th transistor (M7) source electrode respectively with the 8th transistor (M8), the first of the 7th electric capacity (C7)
The first end of end and the 8th electric capacity (C8) is connected；
The grid of 8th transistor (M8) and the second end of 3rd resistor (R3) and the second end of the 4th electric capacity (C4)
Connection；
The grid of 9th transistor (M9) respectively with the first end of the 6th resistance (R6) and the 7th electric capacity (C7)
Two ends are connected；
The drain electrode of 9th transistor (M9) is connected with the source electrode of the tenth transistor (M10)；
The source electrode and the 9th electric capacity (C9) of the drain electrode of tenth transistor (M10) respectively with the 11st transistor (M11)
First end connection；
The grid of 11st transistor (M11) respectively with the second end of the 4th resistance (R4) and the 5th electric capacity (C5)
Second end is connected.
In embodiments of the invention, source follower M8 amplifies Y spot noises arc in phase, M6 and M7 common source and common grid amplifiers
By the anti-phase amplification of X spot noises voltage signal, it is overlapped in M8 source electrodes, noise can be offset at output end OUT+；Similarly, source
Follower M11 amplifies Z spot noises arc in phase, M9 and M10 common source and common grid amplifiers are anti-phase by the noise voltage at M7 drain electrodes
Amplification, is overlapped, noise can be offset at output end OUT- in M8 source electrodes.Simultaneously for useful signal, M8 is by Y point signals
With mutually amplification thus with X point opposite in phase, M6 and M7 common source and common grid amplifiers are by the anti-phase amplification of X points, at output end OUT+
To strengthen；M11 by Z point signals with phase amplification thus, M9 and M10 common source and common grid amplifier anti-phase amplification M6 identical with X point phases
It is thus identical with X point phases with the output signals of M7 common source and common grid amplifiers, be enhanced at output end OUT-, and with it is defeated
Go out to hold OUT+ signal phase opposite.M7 and M10 can suppress Miller effect, improve reverse isolation degree, increase circuit stability,
Input and output impedance matching network is set to be independent of each other.As long as carefully design metal-oxide-semiconductor transconductance value can be just realized two ports
Input stage noise is offset respectively and forms differential output signal.Simultaneously because M8 and M11 mutual conductance provides output impedance, Ke Yi
Output matching is realized in the range of broad frequency band, the gain flatness of circuit system is added.
In embodiments of the invention, the grid of the grid of the third transistor (M3) and the 5th transistor (M5) is with
One voltage source (V1) is connected；The second end, the second end of the 5th resistance (R5) and the 6th resistance (R6) of the second resistance (R2)
The second end be connected with the second voltage source (V2)；The source electrode of the third transistor (M3), the source electrode of the 5th transistor (M5),
The drain electrode of 8th transistor (M8), the drain electrode of the 11st transistor (M11), first end, the 3rd resistor of the second electric capacity (C2)
(R3) first end and the first end of the 4th resistance (R4) is connected with tertiary voltage source (V3)；The first transistor (M1)
Source electrode, the source electrode of the 4th transistor (M4), the source electrode of the 6th transistor (M6) and the 9th transistor (M9) source electrode with ground connection
End connection.The signal input part (IN) connects the first end of the first electric capacity (C1)；Second end of the 8th electric capacity (C8) connects
Connect the first signal output part (OUT+)；The second end connection secondary signal output end (OUT-) of 9th electric capacity (C9).
TSMC CMOS 0.18um techniques are used herein, and carrying out emulation to circuit using Cadence RF Spectre tests
Card.
Fig. 2 is the simulation result of 0.1~1.2GHz wideband low noise amplifiers noise coefficient of the present invention.It is possible thereby to
Find out, in 0.1~1.2GHz frequency band ranges, noise coefficient shows that the low-noise amplifier of the present invention exists in 3.2~4.1dB
There is good noise coefficient in whole frequency band.
Fig. 3 is the simulation result of 0.1~1.2GHz wideband low noise amplifiers S parameter of the present invention.It is possible thereby to see
Go out, in 0.1~1.2GHz frequency band ranges, S11<- 15, S22<- 19, show the low-noise amplifier of the present invention in whole frequency band
Inside realize good input and output matching； S12<- 44, showing the low-noise amplifier of the present invention has good reverse isolation
Performance；S21Maximum is 13.5dB, shows the low-noise amplifier of the present invention and has higher gain.
Fig. 4 is the phase of the output port of 0.1~1.2GHz wideband low noise amplifiers two of the present invention and imitating for gain
True result.It can thus be seen that in 0.1~1.2GHz frequency band ranges, phase error is 2.5 °, it was demonstrated that output signal has very
Good differential characteristic, the LNA can realize the function of balun.
Fig. 5 is the simulation result of the linearity of 0.1~1.2GHz wideband low noise amplifiers port of the present invention.Thus
As can be seen that it is -8dBm that 1dB compression points are inputted when frequency is 700M, showing the low-noise amplifier of the present invention has well
The linearity.
Fig. 6 is the stability factor of 0.1~1.2GHz wideband low noise amplifiers of the present invention.It can thus be seen that
Kf＞ 23, showing the low-noise amplifier of the present invention has unconditional stability.
The present invention provides input impedance using the current multiplexing structure of resistive shunt-feedback using transistor transconductance, it is ensured that
There are good input matching properties in wider frequency band, and under identical bias current, the NMOS tube and PMOS of stacking
Single tube mutual conductance is increased to two pipe mutual conductance sums by pipe, and circuit gain is improved in the case where not increasing power consumption.The structure can also be carried
The robustness of high circuit, can reduce ghost effect, temperature and technique change to power gain and the shadow of input resistant matching
Ring.Inversion signal is exported the increase of increase one-level common-source amplifier all the way after input matching stage, is to realize that single ended input both-end is defeated
The basis gone out.Noise cancellation level offsets input matching stage based on the combination of source follower and cascade pole in output end
Noise and strengthen useful signal, form the equal differential signal of opposite in phase amplitude, and provided by the mutual conductance of source follower
Output impedance causes there is good output matching in the range of broad frequency band.
Above example is only to illustrate circuit structure of the invention, rather than its limitations.In addition, according to above-mentioned configuration
Illustrative embodiments can capable field technique personnel understanding and implementation；Can be to the circuit structure described in foregoing embodiments
Modify, or equivalent substitution is carried out to which part circuit structure；And these modifications or replacement, do not make related circuit
The essence of structure departs from the essential characteristic of various embodiments of the present invention technical scheme.The scope of the present invention should be solved according to claim
Release.
Claims (3)
1. a kind of broadband single-ended transfer difference low-noise amplifier, including：Matching stage circuit and noise cancellation level circuit are inputted, it is described
Matching stage circuit is inputted, its input receives the signal (IN) of signal input part, produces the two paths of signals of opposite in phase, leads to respectively
Cross the noise cancellation level circuit that high-pass filter is output to rear class；
The noise cancellation level circuit, noise cancellation level circuit has three inputs, and the input of two output ends, wherein two-way connects
The two-way output of input matching stage is connect, another road input receives the signal (IN) of signal input part, exports two paths of differential signals
(OUT+/OUT-)；
The input matching stage circuit includes：The first transistor (M1), second transistor (M2), third transistor (M3), the 4th
Transistor (M4), the 5th transistor (M5)；Wherein, the grid of the first transistor (M1) respectively with second transistor (M2)
Grid, the second end of the first electric capacity (C1), the first end connection of the first end of first resistor (R1) and the 6th electric capacity (C6)；
The drain electrode of described the first transistor (M1) drain electrode respectively with second transistor (M2), the second of first resistor (R1)
The first end connection at end, the first end of the 3rd electric capacity (C3) and the 4th electric capacity (C4)；
The source electrode of described second transistor (M2) respectively with the drain electrode of third transistor (M3) and the second electric capacity (C2) second
End connection；
The grid of 4th transistor (M4) first end respectively with second resistance (R2) and the second end of the 3rd electric capacity (C3)
Connection；
The drain electrode of 4th transistor (M4) drain electrode respectively with the 5th transistor (M5) and the first end of the 5th electric capacity (C5)
Connection.
The noise cancellation level circuit includes：6th transistor (M6), the 7th transistor (M7), the 8th transistor (M8), the 9th
Transistor (M9), the tenth transistor (M10), the 11st transistor (M11)；
The grid of wherein described 6th transistor (M6) first end respectively with the 5th resistance and the second end of the 6th electric capacity (C6)
Connection；
The drain electrode of 6th transistor (M6) is connected with the source electrode of the 7th transistor (M7)；
The drain electrode of 7th transistor (M7) respectively with the source electrode of the 8th transistor (M8), the first end of the 7th electric capacity (C7) and
The first end connection of 8th electric capacity (C8)；
The grid of 8th transistor (M8) is connected with second end at the second end of 3rd resistor (R3) and the 4th electric capacity (C4)；
The grid of 9th transistor (M9) first end respectively with the 6th resistance (R6) and the second end of the 7th electric capacity (C7)
Connection；
The drain electrode of 9th transistor (M9) is connected with the source electrode of the tenth transistor (M10)；
The drain electrode of tenth transistor (M10) respectively with the source electrode of the 11st transistor (M11) and the 9th electric capacity (C9)
One end is connected；
The grid of 11st transistor (M11) respectively with the second end of the 4th resistance (R4) and the 5th electric capacity (C5) second
End connection.
The grid of the third transistor (M3) and the grid of the 5th transistor (M5) are connected with first voltage source (V1)；
Second end at the second end of the second resistance (R2), the second end of the 5th resistance (R5) and the 6th resistance (R6) is with
Two voltage sources (V2) are connected；
The source electrode of the third transistor (M3), the source electrode of the 5th transistor (M5), the drain electrode of the 8th transistor (M8), the 11st
The drain electrode of transistor (M11), the first end of the second electric capacity (C2), the of the first end of 3rd resistor (R3) and the 4th resistance (R4)
One end is connected with tertiary voltage source (V3)；
Source electrode, the source electrode of the 4th transistor (M4), the source electrode and the 9th of the 6th transistor (M6) of the first transistor (M1)
The source electrode of transistor (M9) is connected with earth terminal.
The signal input part (IN) connects the first end of the first electric capacity (C1)；
Second end of the 8th electric capacity (C8) connects the first signal output part (OUT+)；
The second end connection secondary signal output end (OUT-) of 9th electric capacity (C9).
2. amplifier according to claim 1, it is characterised in that the second transistor (M2), third transistor (M3)
It is PMOS transistor with the 5th transistor (M5), remaining is nmos pass transistor.
3. amplifier according to claim 1, it is characterised in that the tertiary voltage source (V3) provides direct current biasing electricity
Pressure.
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| CN201710266674.XA CN107196611B (en) | 2017-04-21 | 2017-04-21 | Broadband single-ended-to-differential low-noise amplifier |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336978A (en) * | 2018-01-10 | 2018-07-27 | 南京邮电大学 | A kind of cascade distributed low noise amplifier |
| CN108880483A (en) * | 2018-07-12 | 2018-11-23 | 安徽矽磊电子科技有限公司 | A kind of broad band amplifier of noise feedforward cancellation |
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|---|---|---|---|---|
| CN108336978B (en) * | 2018-01-10 | 2021-07-20 | 南京邮电大学 | Cascaded distributed low-noise amplifier |
| CN108336978A (en) * | 2018-01-10 | 2018-07-27 | 南京邮电大学 | A kind of cascade distributed low noise amplifier |
| CN108880483A (en) * | 2018-07-12 | 2018-11-23 | 安徽矽磊电子科技有限公司 | A kind of broad band amplifier of noise feedforward cancellation |
| CN108880483B (en) * | 2018-07-12 | 2022-06-14 | 安徽矽磊电子科技有限公司 | Broadband amplifier with noise feedforward cancellation |
| CN109361363A (en) * | 2018-09-11 | 2019-02-19 | 天津大学 | A kind of broadband fully differential low-noise amplifier |
| CN110460312A (en) * | 2019-06-27 | 2019-11-15 | 天津大学 | A kind of low-noise amplifier of Broadband emission impedance stabilization |
| CN113131883A (en) * | 2019-12-30 | 2021-07-16 | 澜至电子科技（成都）有限公司 | Low noise amplifier |
| CN113131883B (en) * | 2019-12-30 | 2022-10-28 | 澜至电子科技（成都）有限公司 | Low noise amplifier |
| CN112803899A (en) * | 2020-12-28 | 2021-05-14 | 东南大学 | Low-noise amplifier adopting noise cancellation and having no on-chip inductor and single-to-double conversion |
| CN112803899B (en) * | 2020-12-28 | 2023-10-03 | 东南大学 | Noise-cancellation-based on-chip inductance-free single-to-double low-noise amplifier |
| CN113746441A (en) * | 2021-07-13 | 2021-12-03 | 天津大学 | Broadband SiGe BiCMOS low noise amplifier |
| CN113746441B (en) * | 2021-07-13 | 2023-10-20 | 天津大学 | Broadband SiGe BiCMOS Low Noise Amplifier |
| CN114665826A (en) * | 2022-05-23 | 2022-06-24 | 苏州瀚宸科技有限公司 | Non-fully differential circuit system for improving power supply voltage rejection ratio |
| CN114665826B (en) * | 2022-05-23 | 2022-10-04 | 苏州瀚宸科技有限公司 | Non-fully differential circuit system for improving power supply voltage rejection ratio |
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