CN110444650A - A kind of DCAM lamp bead and preparation method thereof - Google Patents

A kind of DCAM lamp bead and preparation method thereof Download PDF

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Publication number
CN110444650A
CN110444650A CN201910840531.4A CN201910840531A CN110444650A CN 110444650 A CN110444650 A CN 110444650A CN 201910840531 A CN201910840531 A CN 201910840531A CN 110444650 A CN110444650 A CN 110444650A
Authority
CN
China
Prior art keywords
metal base
groove
dcam
cavity
lamp bead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910840531.4A
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Chinese (zh)
Inventor
孙雷蒙
杨丹
刘芳
李坤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wick (wuhan) Technology Co Ltd
Original Assignee
Wick (wuhan) Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wick (wuhan) Technology Co Ltd filed Critical Wick (wuhan) Technology Co Ltd
Priority to CN201910840531.4A priority Critical patent/CN110444650A/en
Publication of CN110444650A publication Critical patent/CN110444650A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/647Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages

Abstract

The invention discloses a kind of DCAM lamp beads, including flip LED chips, white glue and metal base, chamfering structure is equipped on the inside of the metal base to form cavity, reflective layer is arranged in the chamfering structure surface, perforative groove is set among the metal base so that the metal base is divided into two independent parts, the white glue is full of the groove, and the flip LED chips are fixed in the cavity and are located above the white glue.The present invention can improve heat dissipation effect, and keep the subsequent attachment application of lamp bead more convenient, and stability is higher, meanwhile, the light leakage of flip LED chips can be reflected by chamfering structure, reflective layer and white glue, to improve the light efficiency of DCAM lamp bead.Invention additionally discloses a kind of DCAM lamp bead preparation methods.The size of the preparation method simple process, metal base can change according to the size of existing carrier band card slot, so that DCAM lamp bead is more suitable for subsequent light splitting braid, reduce requirement of the DCAM lamp bead to pack environment.

Description

A kind of DCAM lamp bead and preparation method thereof
Technical field
The present invention relates to LED encapsulation technology fields more particularly to a kind of DCAM lamp bead and preparation method thereof.
Background technique
CSP (Chip Scale Package, wafer-level package) is chip encapsulation technology of new generation, refers to package dimension and core The ratio between chip size is not more than 1.2 times of fully functional packaging.CSP encapsulation is suitable for flip-chip, packaging body Product is small, light-weight, can carry high current, is widely used in the fields such as high-power illumination, car light.
The heat dissipation of LED chip is a mostly important problem in encapsulation design, the light decay of LED lamp bead and service life directly with Its junction temperature is related.According to A Leiniusi rule, junction temperature is every to reduce by 10 DEG C, and LED life can extend 2 times, and heat dissipation effect is bad just It will lead to junction temperature raising, and then shorten the LED product service life.Junction temperature not only influences the long-time service life, also directly affects the short time Luminous efficiency can also cause the variety of problems such as spectroscopic studying, colour temperature increase, thermal stress increases and fluorescent glue aging accelerates, therefore, Improvement heat dissipation, control junction temperature are very necessary.Current CSP wafer-level package only wrap up one layer of fluorescent glue in flip-chip periphery and Realize encapsulation, chip cooling is difficult, often directly radiates in attachment by substrate, improves the heat dissipation to application end group plate It is required that.
To improve CSP LED light effect and colour temperature consistency, there are the packing forms of part CSP LED using two lateral inclines LED chip side is gone out light and is reflected into top surface, such encapsulating structure still remains following by white wall glue as catoptric arrangement Problem: (1) two lateral incline structures of white wall glue will increase technology difficulty in product volume production;(2) bottom surface still exposed chip electricity Pole surface, die bottom surface go out light can not be used effectively or generate leakage Blue-light filtering can not solve;(3) white wall glue is not LED Chip generates the channel that quickly and effectively sheds of heat, will cause heat and mostly conducts to fluorescent glue, causes fluorescent powder long-term It is heated so that luminous efficiency decays and generates color drift, influence light efficiency and light quality.
CSP wafer-level package size is small, may move in the card slot of carrier band in subsequent light splitting braid, improves to packaging Therefore the requirement in bad border in order to be adapted to tape package, needs to develop a kind of CSP LED package of adjustable dimension.
Summary of the invention
Present invention aims to overcome that the deficiency of above-mentioned technology, provides a kind of preparation method of DCAM lamp bead, feature It is, comprising the following steps:
S1 makes metal base using integrated cast shaping process, and the metal base is the chamfering structure that inside is equipped with And fluted cavity is set among bottom, reflective layer is made on the inside of metal base by way of being electroplated or being deposited;
S2 fills white glue in the metal base groove using dispenser, keeps white glue and the groove neat by scraping Flat, oven cooking cycle makes latex solidified;
The electrode of flip LED chips is fixed on metal base cavity bottom by S3, and flip LED chips is made to be in the groove Surface;
S4 pours into light transmission glue or fluorescent glue using dispenser in the metal base, makes it full of the metal base chamber Body simultaneously surrounds flip LED chips, and oven cooking cycle makes its solidification;
S5 sprays and solidifies fluorescent glue, forms fluorescent adhesive layer above the metal base and the flip LED chips;
Up to DCAM lamp bead.
Further, S2 fills white glue in the metal base groove, and step includes:
Casting forms the groove jig that can accommodate the metal base;
Metal base is placed in groove jig;
White glue is put in the groove jig, makes to fill white glue in the groove, oven cooking cycle makes its solidification.
Further, it is described metal base is placed in groove jig comprising steps of
It is laid with adhesive film in groove jig, there are sticky region and the non-adhesive zones of array on the adhesive film;
Multiple groups metal base forming array is neatly placed in corresponding sticky region, gently presses the metal base.
Further, the equivalent width of the width of the non-adhesive zones and the groove.
Further, fixed using conductive silver glue bonding, Reflow Soldering, eutectic weldering or metal bonding mode described in S3.
Further, integration cast shaping process described in S1 the following steps are included:
The cavity that inner surface has chamfering structure is cast, the cavity is cut by laser, it is fluted to obtain tool among bottom Metal base.
Further, integration cast shaping process described in S1 the following steps are included:
The cavity of two pieces of opposed opens is cast, the cavity inner surface has chamfering structure, by two pieces of cavity hatch Face is staggered relatively to obtain having fluted metal base among bottom.
Further, the reflective layer is with a thickness of 40u.
The present invention also provides a kind of DCAM lamp bead, including flip LED chips, white glue and metal base, the metal bases Inside is equipped with chamfering structure to form cavity, and reflective layer is arranged in the chamfering structure surface, and setting is passed through among the metal base For the groove worn the metal base is divided into two independent parts, the white glue is full of the groove, the flip LED core Piece is fixed in the cavity and is located above the white glue.
Further, the metal base surface is radiator structure.
Beneficial effects of the present invention: DCAM (Direct Chip Attached Module) lamp bead of the invention is CSP core One of chip package, metal base of the invention, which is equivalent to, increases the electrode of chip, on the one hand, can increase the heat dissipation of chip Area significantly improves heat dissipation effect, and keeps the subsequent attachment application of lamp bead more convenient, and stability is higher;On the other hand, it can incite somebody to action The light leakage of flip-chip side and bottom-side electrodes insulating regions passes through chamfering, reflective layer and the bottom intermediate sulcus on the inside of metal base The white glue reflection filled in slot extracts, the light efficiency of General Promotion DCAM lamp bead;In another aspect, metal base is using integration Casting and forming mode makes, and reduces the subsequent technology difficulty for needing to make inclination colourless wall glue of LED chip;Meanwhile Metal Substrate The size of seat can change according to the size of existing carrier band card slot, so that DCAM lamp bead is more suitable for subsequent light splitting braid.
Detailed description of the invention
Metal base top view in Fig. 1 embodiment 1;
DCAM lamp bead in Fig. 2 embodiment 1;
Metal base top view in Fig. 3 embodiment 2;
DCAM lamp bead in Fig. 4 embodiment 2;
DCAM lamp bead in Fig. 5 embodiment 3;
Wherein, 1 is metal base, and 101 be chamfering structure, and 102 be groove, and 103 be card slot, and 2 be flip LED chips, 201 For chip electrode, 3 it is white glue, 4 is light transmission glue, 5 is fluorescent glue.
Specific embodiment
Understand to make the objectives, technical solutions, and advantages of the present invention clearer, it is with reference to the accompanying drawings and embodiments, right The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and It is not used in the restriction present invention.
Embodiment 1
Numerically-controlled machine tool processes mold, and the Ag metal of melting is poured into mold by gravitational casting or pressure casting processes Interior, it is 101 casting of concave curved surface chamfering structure that casting mold, which obtains inside, using the casting is cut by laser among casting, obtains two The symmetrical structure of block opposed open, symmetrical structure is separated to form the metal base 1 for having groove 102, such as Fig. 1 institute Show, metal base 1 is with concave curved surface chamfering structure 101 and bottom centre is formed with groove 102, outside with multiple grooves Radiator structure, the housing depth and 2 height of flip LED chips of metal base 1 are consistent, the curved surface chamfering in 1 inside of metal base Layer of Au film is deposited as reflective layer in body structure surface, thickness about 40u, under 500nm optics, the reflectivity of Au about 50%.
Casting forms the groove jig that can accommodate metal base 1, adhesive film is laid in groove jig, the adhesive film is High temperature resistant and the membrane material with certain degree of hardness, such as polytetrafluoroethylene film, vinylidene film or Kapton, Adhesive film is with a thickness of 0.5-1mm, sticky region and non-adhesive zones with array.According to groove between flip LED chips electrode Width and positive and negative electrode width, make sticky region and non-adhesive zones on adhesive film, and sticky region can bond, positioning metal base Seat, prevents metal base from moving in subsequent dispensing process, and is easily peeled off after the completion of the encapsulation of DCAM lamp bead, non-adhesive zones Surface non-binding.The width of sticky region and the body width of metal base are consistent, the width of non-adhesive zones and the width of groove Unanimously, the width of groove be greater than or equal to flip LED chips positive and negative electrode between insulating regions, be less than positive and negative electrode edge it Between width.
1 forming array of multiple groups metal base is neatly placed in corresponding sticky region, the metal base is gently pressed, is allowed to fixed On adhesive film.
Using dispenser toward groove jig midpoint white glue, make to be full of white glue 3 among 1 bottom of metal base in groove 102, it is white Glue 3 can be silicon resin glue and TiO2Or BaSO4Mixture made of reflect colloid, reflectivity be greater than 95%.
In 1 cavity bottom point tin cream of metal base, the electrode 201 of flip LED chips 2 is placed on tin cream, make it is described fall It fills LED chip 2 and is located at 3 top of white glue, natural cooling after Reflow Soldering completes die bond.
Or base point conductive silver glue (mixture that silver powder and epoxy resin mass ratio are 1:1) in metal base 1, it will The electrode 201 of flip LED chips 2 is placed on conductive silver glue, so that the flip LED chips 2 is located at 3 top of white glue, gently It presses flip LED chips 2 and elargol solidifies under 175 DEG C/1h heating condition, complete die bond.
Light transmission glue 4 is filled in the cavity of metal base 1 using dispenser, so that it is filled up cavity and is sufficiently wrapped up upside-down mounting LED chip 2, and keep light transmission glue concordant with chip and metal base upper surface, in flip LED chips 2, light transmission glue 4, metal base 1 upper surface sprays fluorescent glue 5, so that fluorescent glue 5 is covered on 2 top of the metal base 1 and the flip LED chips, works as fluorescence Glue 5 with a thickness of 150-180 μm when, toasted, baking temperature be 150 DEG C, baking time 2h, fluorescent glue 5 be fluorescent powder With epoxy resin composition.
Adhesive film is taken out and removed from groove jig, up to DCAM lamp bead after cutting, grinding.As shown in Figure 2.
The electrode 201 and light transmission glue 4 of metal base connection flip LED chips 2 in embodiment 1, can not only mention significantly The heat dissipation effect of high DCAM lamp bead can also enhance the stability of DCAM, multiple grooves are provided on the outside of metal base 1, can be with The contact area for increasing metal base and air, further increases heat dissipation effect.Chamfering structure, reflective layer on the inside of metal base And the light leakage of chip sides and bottom-side electrodes insulating regions can be reflected and be extracted by the white glue filled in groove among bottom, To improve the light efficiency of DCAM lamp bead.
Embodiment 2
As shown in figure 3, there is top and a certain side to be open for casting, and bottom has can accommodate flip LED chips electrode Card slot groove structure as metal base 1, as shown in figure 3,1 inner surface of metal base has clinoplain chamfering structure 101 to form cavity, and one layer of Ag films are deposited as reflective layer, thickness about 40u, in 500nm optics on 101 surface of chamfering structure Under, the reflectivity of Ag about 98%;
Casting forms the groove jig that can accommodate metal base 1, and adhesive film, the adhesive film tool are laid in groove jig There are sticky region and the non-adhesive zones of array, 1 forming array of multiple groups metal base is neatly placed in corresponding sticky region, described in light pressure Metal base guarantees that metal base 1 does not shift in subsequent dispensing process.
Using dispenser toward groove jig midpoint white glue, make to be full of white glue 3 among 1 bottom of metal base in groove 102;
The electrode of flip LED chips 2 is placed in card slot 103 after placement scaling powder in the card slot 103 of metal base 1 It is interior, so that flip LED chips 2 is sitting at 3 top of white glue, and metal base 1 and flip LED chips 2 are placed in eutectic furnace, adds At 320 DEG C, die bond is can be completed in soaking time 45s for hot temperature control;
Fluorescent glue 5 is filled in the cavity of metal base 1 using dispenser, so that it is filled up the cavity of metal base 1 and is filled Flip LED chips 2 are wrapped up in subpackage, so that fluorescent glue 5 is covered on 2 top of the metal base 1 and the flip LED chips, are worked as covering Fluorescent glue 5 above flip LED chips with a thickness of 180-200 μm when, toasted, baking temperature is 160 DEG C, when baking Between be 2h.
Adhesive film is taken out and removed from groove jig, up to DCAM lamp bead after cutting, grinding.As shown in Figure 4.
Flip LED chips in embodiment 2 are fixed in the card slot of metal base bottom, can make flip LED chips more Add securely, the stability enhancing of DCAM lamp bead.Meanwhile card slot can be used as radiator structure, increase flip LED chips electrode with The contact area of metal base, further improves heat dissipation effect.In addition, being full of fluorescence in 1 cavity of the present embodiment metal base Glue takes full advantage of the exciting light of flip LED chips, improves launching efficiency.
Embodiment 3
As shown in figure 5, casting top and a certain side opening and the internal groove structure with plane chamfer bevel structure, it will Two pieces of groove structures are symmetrically placed to form the metal base 1 for having groove 102, and metal base 1 is aluminium, the groove 102 Width is greater than 2 electrode insulation peak width of flip LED chips, 2 height one of housing depth and flip LED chips of metal base 1 It causes, one layer of Cu film of chamfering structure electroplating surface is as reflective layer, and thickness about 40u, under 500nm optics, the reflectivity of Cu is about 60%;
Casting forms the groove jig that can accommodate metal base 1, and adhesive film, the adhesive film tool are laid in groove jig There are sticky region and the non-adhesive zones of array, 1 forming array of multiple groups metal base is neatly placed in corresponding sticky region, described in light pressure Metal base guarantees that metal base 1 does not shift in subsequent dispensing process.It is white toward groove jig midpoint using dispenser Glue makes to be full of white glue 3 among 1 bottom of metal base in groove 102;
The electrode 201 of flip LED chips 2 is placed on the metal base on 102 both sides of groove, is pressurizeed using hot-press equipment 5kg/cm2, 240 DEG C -300 DEG C are heated, anneal 10min, realizes being bonded between flip-chip 2 and metal base 1;
Light transmission glue 4 is filled in the cavity of metal base 1 using dispenser, so that it is filled up cavity and is sufficiently wrapped up upside-down mounting LED chip 2, and keep light transmission glue 4 concordant with flip LED chips 2 and metal base upper surface, in flip LED chips 2, light transmission glue 4,1 upper surface of metal base sprays fluorescent glue 5, is covered on fluorescent glue 5 on the metal base 1 and the flip LED chips 2 Side, when fluorescent glue 5 is with a thickness of 200-250 μm, is toasted, and baking temperature is 165 DEG C, baking time 2h;
Adhesive film is taken out and removed from groove jig, up to DCAM lamp bead after cutting, grinding.As shown in Figure 5.
The width of groove is greater than in flip LED chips 2 two among metal base bottom in embodiment 3 in DCAM lamp bead Insulating regions width between electrode can overcome the insulating regions width is too narrow to cause to be difficult to be aligned asking for the groove Topic, simplifies die bond technique.The present embodiment has used the mode of metal bonding to carry out die bond, can make flip LED chips 2 with Combination between metal base 1 is stronger.
DCAM lamp bead of the invention is by thermal conductivity is strong, size is controllable, stability is high metal material as Metal Substrate Seat, instead of traditional white glue, also can be used as the electrode extended layer of flip LED chips, on the one hand junction temperature of chip can be reduced by 15 DEG C or so, the heat dissipation effect of chip is significantly improved, the service life of lamp bead is improved, and keeps the subsequent attachment application of lamp bead more convenient, Improve the stability in use of DCAM lamp bead;On the other hand, the luminous intensity of 4 sides of flip-chip and bottom electrode insulation layer Account for about the 20% of entire chip whole brightness, the interior filling of groove is white among the chamfering, reflective layer and bottom on the inside of metal base Glue, which can reflect the light leakage of flip-chip side and bottom-side electrodes insulating regions, to be extracted, and the light of whole lamp bead 15% can be promoted Effect;In another aspect, metal base is made of integrated casting and forming mode, reduce the subsequent needs production inclination of LED chip The technology difficulty of colourless wall glue;Meanwhile the size of metal base can change according to the size of existing carrier band card slot, so that DCAM lamp Pearl is more suitable for subsequent light splitting braid.
These are only the preferred embodiment of the present invention, is not intended to restrict the invention, for those skilled in the art For member, the invention may be variously modified and varied.All within the spirits and principles of the present invention, it is made it is any modification, Equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.

Claims (10)

1. a kind of preparation method of DCAM lamp bead, which comprises the following steps:
S1 makes metal base using integrated cast shaping process, and the metal base is the chamfering structure that inside is equipped with and bottom Fluted cavity is set among portion, makes reflective layer on the inside of metal base by way of being electroplated or being deposited;
S2 fills white glue in the metal base groove using dispenser, flushes white glue with the groove by scraping, bakes Case baking makes latex solidified;
The electrode of flip LED chips is fixed on metal base cavity bottom by S3, make flip LED chips be in the groove just on Side;
S4 pours into light transmission glue or fluorescent glue using dispenser in the metal base, it is made to be full of the metal base cavity simultaneously Flip LED chips are surrounded, oven cooking cycle makes its solidification;
S5 sprays and solidifies fluorescent glue, forms fluorescent adhesive layer above the metal base and the flip LED chips;
Up to DCAM lamp bead.
2. preparation method according to claim 1, which is characterized in that S2 fills white glue in the metal base groove, Step includes:
Casting forms the groove jig that can accommodate the metal base;
Metal base is placed in groove jig;
White glue is put in the groove jig, makes to fill white glue in the groove, oven cooking cycle makes its solidification.
3. preparation method according to claim 2, which is characterized in that described metal base is placed in groove jig is wrapped Include step:
It is laid with adhesive film in groove jig, there are sticky region and the non-adhesive zones of array on the adhesive film;
Multiple groups metal base forming array is neatly placed in corresponding sticky region, gently presses the metal base.
4. preparation method according to claim 3, which is characterized in that the width of the width of the non-adhesive zones and the groove Degree is consistent.
5. preparation method according to claim 1, which is characterized in that fixed using conductive silver glue bonding, reflux described in S3 Weldering, eutectic weldering or metal bonding mode.
6. preparation method according to claim 1, which is characterized in that integration cast shaping process described in S1 includes following Step:
The cavity that inner surface has chamfering structure is cast, the cavity is cut by laser, obtains having fluted metal among bottom Pedestal.
7. preparation method according to claim 1, which is characterized in that integration cast shaping process described in S1 includes following Step:
The cavity of two pieces of opposed opens is cast, the cavity inner surface has chamfering structure, by two pieces of cavity hatch face phases To being positioned to having fluted metal base among bottom.
8. preparation method according to claim 1, which is characterized in that the reflective layer is with a thickness of 40u.
9. a kind of DCAM lamp bead, which is characterized in that including flip LED chips, white glue and metal base, on the inside of the metal base Equipped with chamfering structure to form cavity, reflective layer is arranged in the chamfering structure surface, and setting is perforative among the metal base Groove is to be divided into two independent parts for the metal base, and the white glue is full of the groove, and the flip LED chips are solid Due in the cavity and above the white glue.
10. a kind of DCAM lamp bead according to claim 9, which is characterized in that the metal base surface is radiator structure.
CN201910840531.4A 2019-09-06 2019-09-06 A kind of DCAM lamp bead and preparation method thereof Pending CN110444650A (en)

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CN201910840531.4A CN110444650A (en) 2019-09-06 2019-09-06 A kind of DCAM lamp bead and preparation method thereof

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Application Number Priority Date Filing Date Title
CN201910840531.4A CN110444650A (en) 2019-09-06 2019-09-06 A kind of DCAM lamp bead and preparation method thereof

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113299815A (en) * 2021-05-25 2021-08-24 深圳市奥蕾达科技有限公司 LED lamp bead

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103489993A (en) * 2013-10-10 2014-01-01 晶科电子(广州)有限公司 High-reliability flip LED light source and LED module light source

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103489993A (en) * 2013-10-10 2014-01-01 晶科电子(广州)有限公司 High-reliability flip LED light source and LED module light source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113299815A (en) * 2021-05-25 2021-08-24 深圳市奥蕾达科技有限公司 LED lamp bead

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Application publication date: 20191112