CN110431662A - 在两侧冷却的电路 - Google Patents
在两侧冷却的电路 Download PDFInfo
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- 238000001816 cooling Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000000919 ceramic Substances 0.000 claims abstract description 51
- 238000001465 metallisation Methods 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000007788 liquid Substances 0.000 claims abstract description 8
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 238000001556 precipitation Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005325 percolation Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 230000004075 alteration Effects 0.000 claims 1
- 230000000712 assembly Effects 0.000 abstract description 3
- 238000000429 assembly Methods 0.000 abstract description 3
- 239000002826 coolant Substances 0.000 abstract description 2
- 239000010949 copper Substances 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Abstract
本发明涉及一种构件（9），其由具有顶面（1b）和底面（1a）的第一陶瓷衬底（1）、陶瓷翅片冷却器或液体穿流的陶瓷冷却器组成，其中在顶面（1b）上施加金属化部（2），通过连接装置（3）来将电路（4）以自身的底面装配在金属化部上。为了通过具有高导热性和同时高导电性的元件来对构件（9）的电路（4）进行的双面冷却并且为了提高结构组合件的效率，按照本发明建议：在电路（4）的顶面上施加连接装置（5），将陶瓷电流/热传导衬底（6）以自身的底面施加在连接装置上，并且将第二陶瓷衬底（8）通过金属化部（7）布置在电流/热传导衬底（6）的顶面上，其中陶瓷电流/热传导衬底（8）为了冷却而包含金属填充的热‑电通孔（过孔）（11）和/或用于引导冷却剂的冷却通道，其中在冷却装置的这两种变型方案中，电流/热传导衬底（6）的顶面和底面相互电连接。
Description
技术领域
本发明涉及一种构件，该构件由具有顶面和底面的第一陶瓷衬底、陶瓷翅片冷却器或液体穿流的陶瓷冷却器或（空气或液体冷却的）陶瓷冷却体组成，其中在顶面上施加金属化部，通过连接装置来将由半导体材料组成的电路以自身的底面装配在所述金属化部上。
背景技术
已知的是，由Al2O3、AIN或Si3N4组成的陶瓷衬底带有至少在一侧的金属化部（DCB-CU、厚膜Cu、Ag、W-Ni-Au），在所述金属化部上又以固定的方式通过压力、焊料、经烧结的银、银胶等来装配电路。
在该衬底的第二侧上可存在其他金属化面，例如将由铝等组成的冷却体粘接或焊接到这些金属化面上。电路因此最多一侧地与电绝缘的散热器连接。该电路的上方自由面最大地被气体冷却。电路一般也理解为芯片或晶体管。
发明内容
本发明基于以下任务：改善根据权利要求1的前序部分所述的构件，使得电路在两侧、也即不仅在其底面也在其顶面被冷却。通过具有高导热性和同时高导电性的元件来对电路进行的双面冷却应该提高结构组合件的效率。此外，应该确保：在加热情况下或者总体上在温度改变的情况下使构件保持自身的全部功能性并且并不失效。
按照本发明，该任务通过一种具有权利要求1的特征的构件得以解决。电路通过如下方式在两侧、不仅在自身的底面也在自身的顶面被冷却：在电路的顶面上施加连接装置并且将第二陶瓷衬底通过金属化部布置在电流/热传导衬底的顶面上，其中将陶瓷电流/热传导衬底以自身的底面施加在所述连接装置上，其中该陶瓷电流/热传导衬底为了冷却而包含金属填充的热-电通孔（过孔（Vias）），其中在冷却装置的这两种变型方案中电流/热传导衬底（6）的顶面和底面相互电连接。电路的双面冷却通过具有高导热性和同时的高导电性的元件来提高电路的结构组合件的效率。
在陶瓷电流/热传导衬底的过孔中的金属在此不仅位于第二衬底的金属化部上也位于连接装置上，其中该连接装置处于所述电路上。
优选地，电流/热传导衬底的陶瓷具有与电路的半导体材料的膨胀系数适配的膨胀系数。该构件由此在加热情况下或者总体上在温度改变的情况下保持自身的全部功能性并且并不失效。
电流/热传导衬底的和电路的膨胀系数以最大3ppm的程度彼此偏差。优选地，电流/热传导衬底是直角平行六面体或平面衬底。
电路优选是硅电路、SiC电路、GaN电路，诸如二极管或晶体管。
金属化部优选地由DCB-Cu、AMB-Cu、厚膜Cu、Ag或W-Ni-Au组成和/或是与该陶瓷衬底烧结的金属化部。经烧结的金属化部与陶瓷紧密地连接并且由此具有从电路到陶瓷中的出色的热传输。
连接装置优选地是焊料、经烧结的银或导热胶。
在按照本发明的实施方式中，通孔由Cu或Ag组成并且衬底由铝氮化物、铝氧化物或银氮化物组成。这些陶瓷具有高导热性。
在一种实施方式中，在第一陶瓷衬底的底面上布置冷却元件、例如翅片或类似物，或者该衬底自身是作为冷却体以空气或液体穿流的方式来实施的。
借助于具有金属填充的过孔的陶瓷电流/热传导衬底，可以进行更好的双面散热，其中该过孔通过连接装置来接触电路的自由顶面。这种电流/热传导衬底包含金属填充的热-电通孔（过孔），其以例如Cu或Ag来填充。如果选择铝氮化物作为衬底材料，则其约为4.7ppm/K的膨胀系数接近于芯片的硅。
这种过孔陶瓷（Viakeramik）（电流/热传导衬底）的连接可以不仅在电路的一侧而且也在金属化陶瓷衬底的另一侧上通过焊料、银膏或银烧结层在第二陶瓷衬底上进行或者在铜膏烘烤时直接与金属化的上方衬底的铜层连接。
为了进一步提高散热，可以替代陶瓷电流/热传导衬底地也使用液体穿流的陶瓷冷却器或具有陶瓷翅片的这种冷却器。
附图说明
附图示出现有技术（图1）和按照本发明的构件（图2）以及示例性地示出具有金属化部7的附加的层的按照本发明的另一构件（图3）。
具体实施方式
图1示出由具有顶面1b和底面1a的第一陶瓷衬底1组成的构件9，其中在顶面1b上施加金属化部2，通过连接装置3来将由半导体材料组成的电路4以其底面装配在该金属化部上。
图2示出根据现有技术的构件9。该构件由具有顶面1b和底面1a的第一陶瓷衬底1组成，其中在该顶面1b上施加金属化部2，通过连接装置3来将电路4以其底面装配在该金属化部上。按照本发明通过连接装置5来将陶瓷电流/热传导衬底6以其底面施加在电路4或电路的顶面上并且通过金属化部7来将第二陶瓷衬底8布置在该电流/热传导衬底6上，其中该陶瓷电流/热传导衬底6包含金属填充的热-电通孔（过孔）11和/或用于引导冷却剂的冷却通道。
陶瓷衬底1、8优选地是板状地构造的并且由铝氧化物、硅氮化物或优选地由铝氮化物组成，其具有非常高的热传导能力。
金属化部优选地由DCB-Cu、AMB-Cu、厚膜Cu、Ag或W-Ni-Au组成和/或与陶瓷衬底1、8烧结。
电路4在所示实施方式中是二极管或晶体管。
连接装置3、5优选地是焊料、经烧结的银或银胶。
通孔11例如由Cu或Ag组成。
在第一陶瓷衬底1的底面1a上优选地布置冷却元件，这在图2中未示出。冷却元件1和8可以为了空气冷却而包含翅片。但是其也可以是引导液体的冷却箱。
陶瓷电流/热传导衬底6用于将电路4的废热散到陶瓷衬底8中并且可以另一方面也被利用用于将电路4电耦合到金属化部7上。电流/热传导衬底6也由铝氧化物、硅氮化物或优选地由铝氮化物组成。通过其金属填充的热-电通孔（过孔）11，传输废热并且建立电连接。优选地，通孔（过孔）11垂直于电流/热传导衬底6的表面地延伸。
用附图标记10来标出电连接。
图3示出：在连接装置5和陶瓷电流/热传导衬底之间可以施加金属化部7的其他层。所述金属化部7的其他层优选地与金属化部层7通过金属填充的热-电通孔（过孔）而处于材料连接，其中该金属化部层被布置在电流/热传导衬底6和第二陶瓷衬底8之间。
Claims (8)
1.一种构件（9），所述构件由具有顶面（1b）和底面（1a）的第一陶瓷衬底（1）、陶瓷翅片冷却器或液体穿流的陶瓷冷却器组成，其中在所述顶面（1b）上施加金属化部（2），通过连接装置（3）来将由半导体材料组成的电路（4）以自身的底面装配在所述金属化部上，其特征在于，
a. 在所述电路（4）的所述顶面上施加连接装置（5），其中将陶瓷电流/热传导衬底（6）以自身的底面施加在所述连接装置上，并且将第二陶瓷衬底、陶瓷翅片冷却器或液体穿流的陶瓷冷却器（8）通过金属化部（7）布置在所述电流/热传导衬底（6）的顶面上，
b. 其中所述陶瓷电流/热传导衬底（8）为了冷却所述半导体而包含金属填充的热-电通孔（过孔）（11），
c. 其中在冷却装置的这两种变型方案中，所述电流/热传导衬底（6）的所述顶面和所述底面相互电连接。
2.根据权利要求1所述的构件（9），其特征在于，所述电流/热传导衬底（6）的陶瓷具有与所述电路（4）的所述半导体材料的膨胀系数适配的膨胀系数。
3.根据权利要求2所述的构件（9），其特征在于，所述电流/热传导衬底（6）的所述膨胀系数以最大3ppm/K的程度偏差于所述电路（4）的所述半导体材料的膨胀系数（根据权利要求1至3之一所述的构件（9），其特征在于，所述电流/热传导衬底（6）是直角平行六面体或平面衬底。
4.根据权利要求1至4之一所述的构件（9），其特征在于，所述电路（4）是硅电路、SiC电路、GaN电路，例如二极管或晶体管。
5.根据权利要求1至5之一所述的构件（9），其特征在于，所有金属化部（2、7）由DCB-Cu、AMB-Cu、厚膜Cu、Ag或W-Ni-Au组成和/或是与所述陶瓷衬底（1、8）烧结的金属化部。
6.根据权利要求1至6之一所述的构件（9），其特征在于，所述连接装置（3、5）是焊料、经烧结的银或银胶。
7.根据权利要求1至7之一所述的构件（9），其特征在于，所述通孔（11）由Cu或Ag组成，并且所述衬底（1、8）由铝氮化物组成。
8.根据权利要求1至8之一所述的构件（9），其特征在于，在所述第一陶瓷衬底（1）的所述底面（1a）上布置冷却元件。
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| PCT/EP2018/057953 WO2018184948A1 (de) | 2017-04-06 | 2018-03-28 | Zweiseitig gekühlter schaltkreis |
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| CN112750600A (zh) * | 2020-12-29 | 2021-05-04 | 华进半导体封装先导技术研发中心有限公司 | 一种基于微流道的可调式电感及其制造方法 |
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| DE102019124593A1 (de) * | 2019-09-12 | 2021-03-18 | Tdk Electronics Ag | Kühlsystem |
| EP3852138B1 (en) | 2020-01-20 | 2023-11-08 | Infineon Technologies Austria AG | An electronic module comprising a semiconductor package connected to a fluid heatsink |
| JP2023520234A (ja) * | 2020-03-31 | 2023-05-16 | アイピージー フォトニクス コーポレーション | 高出力レーザエレクトロニクス |
| US20230108475A1 (en) * | 2021-10-04 | 2023-04-06 | Formfactor, Inc. | Thermal management techniques for high power integrated circuits operating in dry cryogenic environments |
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- 2018-03-28 EP EP18715007.3A patent/EP3607581A1/de not_active Withdrawn
- 2018-03-28 CN CN201880021126.3A patent/CN110431662A/zh active Pending
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- 2018-03-28 WO PCT/EP2018/057953 patent/WO2018184948A1/de unknown
- 2018-03-28 JP JP2019547464A patent/JP2020516054A/ja active Pending
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| TW201838114A (zh) | 2018-10-16 |
| KR20190137086A (ko) | 2019-12-10 |
| JP2020516054A (ja) | 2020-05-28 |
| US20200075455A1 (en) | 2020-03-05 |
| WO2018184948A1 (de) | 2018-10-11 |
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