CN110396671B - Device and method for preparing multi-component uniform thin film material in high flux - Google Patents
Device and method for preparing multi-component uniform thin film material in high flux Download PDFInfo
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- CN110396671B CN110396671B CN201910722742.8A CN201910722742A CN110396671B CN 110396671 B CN110396671 B CN 110396671B CN 201910722742 A CN201910722742 A CN 201910722742A CN 110396671 B CN110396671 B CN 110396671B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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Abstract
The invention provides a device and a method for preparing a multi-component uniform film material in a high-throughput manner, relates to the technical field of film preparation, and can prepare uniform film samples with various different material components through one-time experiment, thereby greatly improving the preparation efficiency; the device comprises a reaction chamber, wherein a deposition table flat plate, a driving system and a sputtering target are arranged in the reaction chamber, and the sputtering target is hung at the top of the reaction chamber; the deposition table flat plate is provided with a plurality of rotary deposition micro-area units, and the rotary deposition micro-area units penetrate through the deposition table flat plate and are rotatably connected with the deposition table flat plate; the rotary deposition micro-area unit is connected with the driving system and synchronously rotates under the driving of the driving system. The technical scheme provided by the invention is suitable for the process of preparing the film by sputtering.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of film preparation, in particular to a device and a method for preparing a multi-component uniform film material in a high-flux manner.
[ background of the invention ]
The development of new materials is a complex process, and usually, developers can only prepare one material with a single component at a time and test the relevant properties of the material. The traditional material research method with trial and error as a characteristic not only is time-consuming and labor-consuming, but also severely restricts the research and development speed of the material and needs higher research and development cost.
In view of this, more efficient experimental methods must be explored. The high-throughput experimental method can complete the preparation and characterization of a large number of samples in a short time, thereby greatly improving the research and development speed of new materials. Generally, the preparation method of the combined material film sample in the high-throughput experiment mainly comprises a co-deposition film method, a discrete template film coating method and a continuous template film coating method. In the case of the co-deposition thin film method, although a large number of thin film materials having different compositions can be prepared through one experiment by the magnetron sputtering co-deposition technique, the composition of a thin film material having a specific composition is not uniform in the corresponding region. In addition, the prepared sample must be characterized by a high-throughput characterization mode of a micro-area, and the method is not suitable for a traditional relatively mature characterization mode and has poor applicability.
In view of the above, there is a need to develop an apparatus and method for high throughput preparation of multi-component uniform thin film materials that addresses the deficiencies of the prior art to solve or mitigate one or more of the problems set forth above.
[ summary of the invention ]
In view of the above, the invention provides a device and a method for preparing a multi-component uniform thin film material in a high throughput manner, which can prepare uniform thin film samples with various different material components through one experiment, and greatly improve the preparation efficiency.
In one aspect, the invention provides a device for preparing multi-component uniform thin film materials in a high-throughput manner, which is characterized by comprising a reaction chamber, wherein a deposition table flat plate, a driving system and a sputtering target are arranged in the reaction chamber, and the sputtering target is hung at the top of the reaction chamber;
the bottom of the rotary deposition micro-area unit penetrates through the flat plate of the deposition table and is rotatably connected with the flat plate of the deposition table;
the rotary deposition micro-area unit is connected with the driving system and synchronously rotates under the driving of the driving system.
The above aspects and any possible implementation manners further provide an implementation manner, wherein a first transmission gear is fixedly sleeved at the bottom end of each rotating deposition micro-area unit, and two adjacent first transmission gears are meshed with each other; an extension shaft is further arranged at the bottom end of one of the rotary deposition micro-area units, a second transmission gear is fixedly sleeved on the extension shaft, and the second transmission gear is connected with the driving system.
The above aspects and any possible implementations further provide an implementation, in which the spin deposition micro-sector unit includes a sample stage, a coarse spindle, and a fine spindle; the sample table is horizontally arranged, the lower surface of the sample table is fixedly connected with the top end of the thick rotating shaft, and the bottom end of the thick rotating shaft is fixedly connected with the top end of the thin rotating shaft; the fine rotating shaft penetrates through the flat plate of the deposition table and is rotatably connected with the flat plate of the deposition table.
The above aspect and any possible implementation further provide an implementation, where the rotatable connection is a bearing connection, specifically: and arranging a plurality of bearings corresponding to the thin rotating shafts in the flat plate of the deposition table, wherein the thin rotating shafts penetrate through the middle holes of the bearings to realize bearing connection.
The above aspect and any possible implementation manner further provide an implementation manner, in which the driving system includes a driving motor and a driving gear, and the driving gear is fixedly sleeved on a motor shaft of the driving motor; the driving gear is meshed with the second transmission gear.
The above aspects and any possible implementations further provide an implementation in which the driving motor is insulated from the inner wall of the reaction chamber.
The above aspects and any possible implementation manner further provide an implementation manner, wherein a plurality of support rods for supporting the deposition table plate are arranged below the deposition table plate.
The above aspect and any possible implementation further provide an implementation in which the first transmission gear, the second transmission gear, and the driving gear are provided with downward bosses, and the bosses are provided with fixed jackscrews.
In another aspect, the present invention also provides a method for preparing a thin film material using the apparatus for preparing a multi-component uniform thin film material with high throughput as described in any one of the above, wherein the method comprises the steps of:
s1, arranging a target material with required material composition on the sputtering target, and adjusting the angle and the height of the sputtering target;
s2: placing and fixing the matrix on the sample stage of each rotary deposition micro-area unit;
s3: turning on a driving motor to enable each rotating deposition micro-area unit to rotate synchronously;
s4: turning on a sputtering switch to start sputtering coating;
s5: and (4) closing the equipment after the coating is finished, and taking out the samples to obtain a plurality of uniform film samples with different material components.
The above aspects and any possible implementation manners further provide an implementation manner that the vacuum degree, the air pressure, the temperature and the sputtering power in the reaction chamber are adjusted according to the specific condition of the coating before sputtering is started.
Compared with the prior art, the invention can obtain the following technical effects: various materials can be deposited on the sample table with each micro-area capable of rotating independently, so that film samples with various different material components can be prepared through one experiment, and the surface of each sample can be ensured to be a film with uniform components; the invention applies the high-flux thought and method to the preparation of the multi-component uniform film, greatly improves the preparation efficiency and accelerates the development and screening of new materials.
Of course, it is not necessary for any one product in which the invention is practiced to achieve all of the above-described technical effects simultaneously.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an apparatus for high throughput preparation of a multi-component uniform thin film material according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the structure of a sample stage and a spindle in a micro-area unit according to an embodiment of the present invention;
FIG. 3 is a schematic structural view of a transmission gear and a drive gear provided in accordance with an embodiment of the present invention;
FIG. 4 is a distribution diagram of deposition micro-zones provided by one embodiment of the present invention;
FIG. 5 is a distribution diagram of deposited micro-regions according to another embodiment of the present invention.
Wherein, in the figure:
1-a sample stage; 2-a thick rotating shaft; 3-thin rotating shaft; 4-a bearing; 5-depositing a flat plate; 6-a first transmission gear; 7-a boss; 8-an extension shaft; 9-a second transmission gear; 10-a drive gear; 11-a drive motor; 12-a support bar; 13-an insulating member; 14-a first sputter target; 15-a second sputter target; 16-fixed jackscrew.
[ detailed description ] embodiments
For better understanding of the technical solutions of the present invention, the following detailed descriptions of the embodiments of the present invention are provided with reference to the accompanying drawings.
It should be understood that the described embodiments are only some embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in the examples of the present invention and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
A device for preparing multi-component uniform film material in high flux is shown in figure 1 and comprises a reaction chamber, wherein a deposition table, a driving system and a sputtering target are arranged in the reaction chamber, and the sputtering target is hung at the top of the reaction chamber; the deposition table comprises a deposition table flat plate 5, a plurality of independent rotary deposition micro-area units are arranged on the deposition table flat plate 5, and each rotary deposition micro-area unit can be independently disassembled and assembled. The micro-area unit thin rotating shaft is connected with the flat plate of the deposition table through a bearing, and the method specifically comprises the following steps: the deposition table flat plate 5 is provided with a plurality of through holes, bearings 4 are arranged in the through holes, and the rotary deposition micro-area units penetrate through the through holes and are in bearing connection with the bearings 4. The bottom of every rotatory deposit subregion unit all is equipped with first drive gear 6, and all first drive gear 6 all set up on same level, and two adjacent first drive gear 6 mesh connections to guarantee to rotate other first drive gears all rotatable when one of them, reach power transmission's purpose.
As shown in fig. 2, the rotating deposition micro-area unit includes a horizontally disposed sample stage 1, a lower surface of the sample stage 1 is fixedly connected to a top end of a thick rotating shaft 2, and a bottom end of the thick rotating shaft 2 is fixedly connected to a top end of a thin rotating shaft 3. The thin rotating shaft 3 passes through the flat plate 5 of the deposition table and the corresponding bearing 4 and is in bearing connection with the bearing 4. The bottom of thin pivot 3 is overlapped and is equipped with first drive gear 6. The sample table 1 of the micro-area unit on the surface of the deposition table is circular, rectangular or in any other shape, and the thick rotating shaft and the thin rotating shaft are both circular. The rotating shaft of the micro-area unit is thick at the top and thin at the bottom and is placed in the bearing groove, other fixing modes are not needed, and smooth rotation between the thin rotating shaft and the bearing is guaranteed while the assembly and disassembly are convenient. The thin rotating shaft of a certain micro-area unit is longer than the thin rotating shafts of other micro-area units (namely, an extension shaft 8 is arranged), and a first transmission gear and a second transmission gear are sleeved on the thin rotating shafts of the other micro-area units so as to transmit power from a driving motor. The first transmission gear and the second transmission gear are fixedly connected with the thin rotating shaft or the extension shaft 8.
The driving system comprises a driving motor 11 and a driving gear 10, the driving gear 10 is sleeved on a rotating shaft of the driving motor 11, the driving motor provides power and is driven by a gear to provide power and power transmission for the synchronous rotation of all the deposition micro-area units on the surface of the deposition table. The thin rotating shaft 3 of one of the rotary deposition micro-area units is provided with an extension shaft, a second transmission gear 9 is sleeved on the extension shaft, and the second transmission gear 9 is fixedly connected with the extension shaft. The second transmission gear 9 is in meshed connection with a driving gear 10. When the driving motor 11 works, the driving gear 10 is driven to rotate, the driving gear 10 drives the second transmission gear 9 to rotate, the second transmission gear 9 drives the extension shaft and the rotary deposition micro-area unit to rotate, meanwhile, the first transmission gear 6 on the rotary deposition micro-area unit rotates to rotate along with the rotation of the thin rotating shaft 3, so that the rotation of other first transmission gears 6 is driven, and the synchronous rotation of all rotary deposition micro-area units is realized. The driving motor and the wall of the reaction chamber are mutually insulated so as to meet the requirements of other process parameters in the actual coating process.
All the transmission gears and the driving gears are provided with downward bosses as shown in fig. 3, and fixing jackscrews 16 are arranged in the bosses, so that the transmission gears and the driving gears can be conveniently disassembled and assembled while being fixed with the rotating shaft.
Four corners of the flat plate 5 of the deposition table are respectively provided with a support rod 12, the heights of the four support rods 12 are matched with other parts such as a rotating shaft, a gear and the like, and a certain arrangement space can be provided for a driving system while the support is provided for the flat plate of the deposition table. The support rod can be divided into an upper part and a lower part, the middle part is blocked by an insulating component 13, and the insulating component 13 is made of insulating materials such as insulating ceramics; or the support rod is integrally made of insulating materials, so that the deposition table is electrically isolated from the chamber.
The adjusting device for vacuum degree, air pressure and temperature continues the structure and working principle of the traditional film preparation device, and the details are not repeated.
The application method for preparing the multi-component uniform thin film material in a high-flux manner by using the device specifically comprises the following steps:
step 1: after the target material with required specific material components is arranged on a sputtering target, the angle and the height of the sputtering deposition target are adjusted;
step 2: placing and fixing the matrix on the sample stage of each micro-area unit;
and step 3: after other coating parameters such as vacuum degree, air pressure, temperature, power (namely the power of a sputtering target deposition power source) and the like are adjusted, a driving motor is turned on before formal coating, so that all micro-area units synchronously rotate after gear transmission;
and 4, step 4: turning on a sputtering switch to start sputtering coating, and simultaneously depositing a plurality of materials on a deposition table;
and 5: and (4) closing the equipment after the coating is finished, and taking out the samples to obtain a plurality of uniform film samples with different material components.
Example 1
Referring to fig. 1, in an example of preparing Cu (100-x) Crx (x ═ 3.2, 4.5, 5.7, 6.5, 7.9, 9.2, 10, 6 at.%) Cu-chromium alloy thin films having 7 different alloy compositions, a high purity copper (99.9995%) target material and a high purity chromium (99.95%) target material were placed on two target positions, and the two target angles were adjusted to be 45 ° from the horizontal direction. Wherein, the copper target position is a direct current power source, and the chromium target position is a radio frequency power source. 7 silicon wafers with the size of 10mm multiplied by 10mm are placed in an acetone solution for ultrasonic cleaning for 20min and then respectively placed on 7 micro-area sample tables in the parallel direction of two targets. Adjusting magnetron sputtering process parameters which are respectively as follows: the Cu target power is 100W, the Cr target power is 100W, the sputtering time is 30min, the air pressure is 0.5Pa, and the vacuum degree is 8 multiplied by 10 < -4 > Pa. And turning on a driving motor to enable each micro-area unit to synchronously rotate, and turning on a target power source to perform sputtering coating. After the film coating is finished, taking out samples and analyzing the content and distribution of copper elements and chromium elements in 7 film samples by an EDS (electron-dispersive spectroscopy) spectrometer. As shown in fig. 4, the different gray levels of each deposited micro-region represent different alloying element compositions. Wherein the closer the sample to the copper target the greater the gray scale (i.e., the darker the color), the higher the copper content. Accordingly, the closer the sample to the chromium target the lower the shade (i.e., the lighter the color), the higher the chromium content. In addition, the uniformity of the components of a single sample was analyzed by an EDS spectrometer, and the results showed that the uniformity of the components of the sample was less than 1% in the range of 10mm × 10 mm.
Example 2
Referring to fig. 1, taking the example of preparing a Cu (100-x-y) CrxTiy (x is not less than 3 and not more than 10, y is not less than 2 and not more than 8 at.%) Cu-cr-ti alloy thin film with 45 different alloy components, a high-purity copper (99.9995%) target, a high-purity chromium (99.95%) target and a high-purity titanium (99.995%) target are respectively placed on three target positions, and angles of the three targets are adjusted to form 45 ° with the horizontal direction. The copper target position and the titanium target position are direct current power sources, the chromium target position is a radio frequency power source, the three targets are distributed in a triangular mode, and the included angle between the three targets is 120 degrees. 45 silicon wafers with the size of 10mm multiplied by 10mm are placed in an acetone solution for ultrasonic cleaning for 20min and then respectively placed on 45 micro-area sample tables. Adjusting magnetron sputtering process parameters which are respectively as follows: the Cu target power is 100W, the Cr target power is 100W, the Ti target power is 100W, the sputtering time is 30min, the air pressure is 0.5Pa, and the vacuum degree is 8 multiplied by 10 < -4 > Pa. And turning on a driving motor to enable each micro-area unit to synchronously rotate, and turning on a target power source to perform sputtering coating. And after the film coating is finished, taking out samples and analyzing the content and distribution of copper elements and chromium elements in 45 film samples by an EDS (electron-dispersive spectroscopy) spectrometer. As shown in fig. 5, the different gray levels for each deposited micro-region represent different alloying element compositions. Wherein the closer the sample to the copper target the greater the gray scale (i.e., the darker the color), the higher the copper content. Correspondingly, the closer the sample is to the chromium or titanium target, the lower the shade (i.e., the lighter the color), the higher the chromium and titanium content. In addition, the compositional uniformity of a single sample was analyzed by EDS spectrometer. The results show that the sample composition uniformity is less than 1% in the range of 10mm x 10 mm.
The above detailed description is directed to an apparatus and method for high throughput preparation of multi-component uniform thin film materials according to embodiments of the present application. The above description of the embodiments is only for the purpose of helping to understand the method of the present application and its core ideas; meanwhile, for a person skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
As used in the specification and claims, certain terms are used to refer to particular components. As one skilled in the art will appreciate, manufacturers may refer to a component by different names. This specification and claims do not intend to distinguish between components that differ in name but not function. In the following description and in the claims, the terms "include" and "comprise" are used in an open-ended fashion, and thus should be interpreted to mean "include/include, but not limited to. "substantially" means within an acceptable error range, within which a person skilled in the art can solve the technical problem and substantially achieve the technical result. The description which follows is a preferred embodiment of the present application, but is made for the purpose of illustrating the general principles of the application and not for the purpose of limiting the scope of the application. The protection scope of the present application shall be subject to the definitions of the appended claims.
It is also noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a good or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such good or system. Without further limitation, the use of the phrase "comprising a. -. said" to define an element does not exclude the presence of other like elements in a commodity or system that comprises the element.
It should be understood that the term "and/or" as used herein is merely one type of association that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the word "/", herein, generally indicates that the objects associated therewith are in an "or" relationship.
The foregoing description shows and describes several preferred embodiments of the present application, but as aforementioned, it is to be understood that the application is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the application as described herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the application, which is to be protected by the claims appended hereto.
Claims (8)
1. The device for preparing the multi-component uniform thin film material in a high-throughput manner is characterized by comprising a reaction chamber, wherein a deposition table flat plate, a driving system and a sputtering target are arranged in the reaction chamber, and the sputtering target is hung at the top of the reaction chamber;
the bottom of the rotary deposition micro-area unit penetrates through the flat plate of the deposition table and is rotatably connected with the flat plate of the deposition table;
the rotary deposition micro-area unit is connected with the driving system and realizes synchronous rotation under the power drive of the driving system;
the method for preparing the thin film material by using the device comprises the following steps:
s1, arranging a target material with required material composition on the sputtering target, and adjusting the angle and the height of the sputtering target;
s2: placing and fixing the matrix on the sample stage of each rotary deposition micro-area unit;
s3: turning on a driving motor to enable each rotating deposition micro-area unit to rotate synchronously;
s4: turning on a sputtering switch to start sputtering coating;
s5: and (4) closing the equipment after the coating is finished, and taking out the samples to obtain a plurality of uniform film samples with different material components.
2. The apparatus for high throughput preparation of multi-component uniform thin film materials according to claim 1, wherein the bottom end of each of said rotating deposition microcell units is fixedly sleeved with a first transmission gear, and two adjacent first transmission gears are engaged with each other; an extension shaft is further arranged at the bottom end of one of the rotary deposition micro-area units, a second transmission gear is fixedly sleeved on the extension shaft, and the second transmission gear is connected with the driving system.
3. The apparatus for high throughput preparation of multi-component uniform thin film materials according to claim 1, wherein the rotary deposition micro-area unit comprises a sample stage, a coarse spindle and a fine spindle; the sample table is horizontally arranged, the lower surface of the sample table is fixedly connected with the top end of the thick rotating shaft, and the bottom end of the thick rotating shaft is fixedly connected with the top end of the thin rotating shaft; the fine rotating shaft penetrates through the flat plate of the deposition table and is rotatably connected with the flat plate of the deposition table.
4. High throughput preparation apparatus for a multi-component uniform thin film material according to claim 3, wherein said rotatable connection is a bearing connection, in particular: and arranging a plurality of bearings corresponding to the thin rotating shafts in the flat plate of the deposition table, wherein the thin rotating shafts penetrate through the middle holes of the bearings to realize bearing connection.
5. An apparatus for high throughput preparation of multi-component uniform thin film material as claimed in claim 2, wherein said driving system comprises a driving motor and a driving gear, said driving gear is fixedly sleeved on a motor shaft of said driving motor; the driving gear is meshed with the second transmission gear.
6. The apparatus for high throughput of multiple-component uniform thin film materials according to claim 5, wherein said driving motor is insulated from the inner wall of said reaction chamber.
7. The apparatus for high throughput preparation of multi-component uniform thin film materials according to claim 1, wherein a plurality of support rods for supporting the deposition table plate are provided below the deposition table plate.
8. A high throughput apparatus for preparing multi-component uniform film material according to claim 5, wherein said first transmission gear, said second transmission gear and said driving gear are provided with downward bosses, and said bosses are provided with fixed jackscrews.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910722742.8A CN110396671B (en) | 2019-08-06 | 2019-08-06 | Device and method for preparing multi-component uniform thin film material in high flux |
| DE112020001782.6T DE112020001782T5 (en) | 2019-08-06 | 2020-07-08 | DEVICE AND METHOD FOR MANUFACTURING A HOMOGENOUS MULTI-COMPONENT FILM MATERIAL WITH HIGH THROUGHPUT |
| PCT/CN2020/100901 WO2021022965A1 (en) | 2019-08-06 | 2020-07-08 | Apparatus and method for high-throughput preparation of multi-component uniform film material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910722742.8A CN110396671B (en) | 2019-08-06 | 2019-08-06 | Device and method for preparing multi-component uniform thin film material in high flux |
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| Publication Number | Publication Date |
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| CN110396671A CN110396671A (en) | 2019-11-01 |
| CN110396671B true CN110396671B (en) | 2020-10-09 |
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| CN (1) | CN110396671B (en) |
| DE (1) | DE112020001782T5 (en) |
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| CN110396671B (en) * | 2019-08-06 | 2020-10-09 | 北京科技大学 | Device and method for preparing multi-component uniform thin film material in high flux |
| CN113337798B (en) * | 2021-04-13 | 2022-12-27 | 电子科技大学 | Film preparation method, high-flux combined material chip preparation method and system |
| CN114166590B (en) * | 2021-11-15 | 2022-07-15 | 哈尔滨工业大学（威海） | Magnetron sputtering equipment for mechanical property test of mesoscopic scale sample |
| CN114481060A (en) * | 2021-12-23 | 2022-05-13 | 凯盛信息显示材料(洛阳)有限公司 | ITO conductive film glass plate sputtering cavity structure |
| CN115537744A (en) * | 2022-09-21 | 2022-12-30 | 华南理工大学 | Method for preparing SmCo alloy permanent magnetic film by single-substance target high flux |
| CN115896722A (en) * | 2022-11-23 | 2023-04-04 | 昆明理工大学 | Method for improving wear resistance and conductivity of Cu-Ni-Sn alloy |
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| CN109207952B (en) * | 2018-10-25 | 2020-01-10 | 北京航空航天大学 | Method for preparing gradient Nb-Si-based alloy film by adopting high-throughput technology |
| CN109943813B (en) * | 2019-04-28 | 2023-03-14 | 北京航空航天大学 | High-flux preparation method of Al-Cr metal composite coating |
| CN110396671B (en) * | 2019-08-06 | 2020-10-09 | 北京科技大学 | Device and method for preparing multi-component uniform thin film material in high flux |
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| CN108330456A (en) * | 2018-01-31 | 2018-07-27 | 北京大学深圳研究生院 | It is a kind of high throughput material preparation device and its application |
| CN208008884U (en) * | 2018-03-27 | 2018-10-26 | 合肥科晶材料技术有限公司 | A kind of five target magnetic control sputtering plated film instrument for high-throughput coating process |
| CN108396311A (en) * | 2018-05-18 | 2018-08-14 | 宁波英飞迈材料科技有限公司 | High-throughput PECVD device and method |
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