CN109487219A - Impulse laser deposition system and its method for manufacturing thin film - Google Patents
Impulse laser deposition system and its method for manufacturing thin film Download PDFInfo
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- CN109487219A CN109487219A CN201811172619.5A CN201811172619A CN109487219A CN 109487219 A CN109487219 A CN 109487219A CN 201811172619 A CN201811172619 A CN 201811172619A CN 109487219 A CN109487219 A CN 109487219A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to film fabrication techniques field more particularly to a kind of impulse laser deposition systems and its method for manufacturing thin film.The impulse laser deposition system includes that laser, vacuum chamber, substrate warm table, vaccum-pumping equipment and atmosphere gas are passed through equipment, it further include target baffle, thickness test module, thin film parameter test module and computer equipment, the computer equipment is used to be arranged the preparation parameter of the supplemental characteristic adjustment film for the deposition film that film preparation parameter and the corresponding deposition rate for controlling film preparation environment and the film tested according to the thickness test module and the thin film parameter test module are tested.Switch substrate and target by control substrate warm table and the rotation of target turntable, and according to the film deposition rate of test and the preparation parameter of the supplemental characteristic adjusting and optimizing film of deposition film, time and the cost for reducing film preparation improve the working efficiency and control convenience of film preparation.
Description
Technical field
The present invention relates to film fabrication techniques field more particularly to a kind of impulse laser deposition system and its film preparation sides
Method.
Background technique
Existing impulse laser deposition system (Pulsed Laser Deposition, PLD) is when manufacturing film, in substrate
It the replacement substrate to be cooled and manual such as needs after deposition film, can not continuously prepare multiple samples, realize the high throughput of material
Preparation, and be unable to the deposition rate of real-time detection film and optimize and revise film preparation parameter, cause existing pulse laser to deposit
The working efficiency and control convenience of system membrane preparation are bad.
Summary of the invention
In consideration of it, the present invention provides a kind of impulse laser deposition system and its method for manufacturing thin film, solves existing pulse and swash
The bad technical problem of the working efficiency and control convenience of light deposition system membrane preparation.
According to an embodiment of the invention, providing a kind of impulse laser deposition system, including laser, vacuum chamber, substrate add
Thermal station, vaccum-pumping equipment and atmosphere gas are passed through equipment, further include target baffle, thickness test module, thin film parameter test mould
Block and computer equipment, for the target baffle plate setting immediately below the substrate warm table, the target baffle plate setting has can be just
To the target hole of target, the computer equipment for film preparation parameter is set and corresponding control film preparation environment and
Deposition according to the deposition rate of the film of thickness test module test and thin film parameter test module test is thin
The preparation parameter of the supplemental characteristic adjustment film of film.
Preferably, the substrate warm table includes rotating drive mechanism, for driving the substrate warm table to turn around axle center
It is dynamic, to switch the target hole on target baffle described in substrates of different face.
Preferably, the substrate warm table is annular rotary table, and multiple substrates can be uniformly fixed to by pasting or installing
On substrate warm table bottom surface.Preferably, the test notch that the target baffle is provided in separate target hole one end,
The gap position is arranged in test the thin film parameter of deposition film in the thin film parameter test module.
Preferably, the thickness test module is crystal oscillator test module, and the thin film parameter test module is high energy electricity
Sub- diffraction module.
Preferably, the crystal oscillator test module includes crystal oscillator unit, connecting rod and shaft, and the crystal oscillator unit is arranged in institute
It states connecting rod end and can horizontally rotate along the shaft, so that the crystal oscillator unit is moved to film deposition position.
Preferably, the impulse laser deposition system further includes the target turntable for installing multiple targets, and the target turns
Disk can be rotated to switch the target hole on target baffle described in different target faces and by 45 degree of the pulse laser of the laser
It is incident.
Preferably, the target baffle can move up and down with adjust the target baffle and the substrate warm table away from
From.
According to a further embodiment of the invention, a kind of method for manufacturing thin film of above-mentioned impulse laser deposition system is also provided,
It include: control computer equipment setting film preparation parameter, and corresponding control film preparation environment carries out film deposition；Control is thick
Degree test module is moved to the deposition rate of film deposition position and testing film；Control the test of thin film parameter test module
The supplemental characteristic of deposition film；And control the deposition rate for the film that computer equipment is tested according to the thickness test module
With the preparation parameter of the supplemental characteristic adjustment film of the deposition film of thin film parameter test module test.
Preferably, after the control film preparation environment carries out film deposition, further includes: completed when film deposits
Afterwards, control switching target and substrate are to deposit new film.
Preferably, the control computer equipment setting film preparation parameter and corresponding control film preparation environment carry out thin
Film deposition, comprising: film preparation parameter is arranged in control computer equipment；Multiple substrates are fixed on the substrate warm table,
And multiple targets are installed；Control the target hole of particular target face target baffle；And control laser generates pulse laser pair
The particular target bombardment carries out film deposition.
Preferably, the film preparation parameter include thin film composition, film thickness, depositing temperature, deposition atmosphere gas and
Vacuum degree.
Preferably, the method for manufacturing thin film of the impulse laser deposition system, further includes: control switching target is to prepare packet
Combined material containing a variety of target material compositions.
Impulse laser deposition system and its method for manufacturing thin film provided by the invention, including laser, vacuum chamber, substrate add
Thermal station, vaccum-pumping equipment and atmosphere gas are passed through equipment, further include target baffle, thickness test module, thin film parameter test mould
Block and computer equipment, for the target baffle plate setting immediately below the substrate warm table, the target baffle plate setting has can be just
To the target hole of target, the computer equipment for film preparation parameter is set and corresponding control film preparation environment and
Deposition according to the deposition rate of the film of thickness test module test and thin film parameter test module test is thin
The preparation parameter of the supplemental characteristic adjustment film of film, switches substrate and target by control substrate warm table and the rotation of target turntable
Material, and according to the film deposition rate of test and the preparation parameter of the supplemental characteristic adjusting and optimizing film of deposition film, it reduces
The time of film preparation and cost improve the working efficiency and control convenience of film preparation.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described.It should be evident that drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is the schematic diagram of impulse laser deposition system in one embodiment of the invention.
Fig. 2 is the flow diagram of the method for manufacturing thin film of impulse laser deposition system in another embodiment of the present invention.
Fig. 3 is that film preparation is arranged in the method for manufacturing thin film of impulse laser deposition system in another embodiment of the present invention
The flow diagram of parameter and control film preparation environment.
Fig. 4 is the flow diagram of the method for manufacturing thin film of impulse laser deposition system in another embodiment of the invention.
Specific embodiment
Further more detailed description is made to technical solution of the present invention with reference to the accompanying drawings and detailed description.It is aobvious
So, described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Based in the present invention
Embodiment, those of ordinary skill in the art's every other embodiment obtained without creative labor,
It all should belong to the scope of protection of the invention.
In the description of the present invention, it is to be understood that, term " first ", " second " etc. are used for description purposes only, without
It can be interpreted as indication or suggestion relative importance.In the description of the present invention, it should be noted that unless otherwise specific regulation
And restriction, term " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection,
Or it is integrally connected；It can be mechanical connection, be also possible to be electrically connected；It can be directly connected, intermediary can also be passed through
It is indirectly connected.For the ordinary skill in the art, above-mentioned term can be understood in the present invention in conjunction with concrete condition
Concrete meaning.In addition, in the description of the present invention, unless otherwise indicated, the meaning of " plurality " is two or more.
Any process described otherwise above or method description are construed as in flow chart or herein, and expression includes
It is one or more for realizing specific logical function or process the step of executable instruction code module, segment or portion
Point, and the range of the preferred embodiment of the present invention includes other realization, wherein can not press shown or discussed suitable
Sequence, including according to related function by it is basic simultaneously in the way of or in the opposite order, Lai Zhihang function, this should be of the invention
Embodiment person of ordinary skill in the field understood.
Fig. 1 is the schematic diagram of impulse laser deposition system in one embodiment of the invention.As shown, the pulse laser
Depositing system, including laser 10, vacuum chamber 20, substrate warm table 30, target baffle 40, thickness test module 50, film ginseng
Number test module 60 and computer equipment 70, vaccum-pumping equipment and atmosphere gas are passed through equipment.
The laser 10 is arranged outside the vacuum chamber 20, and the pulse laser generated may pass through the vacuum chamber 20
Silica glass window and 45 degree of incident targets 80 being mounted on the target turntable 90.The vaccum-pumping equipment and atmosphere gas
Body is passed through equipment and the vacuum chamber 20 is tightly connected, and the vaccum-pumping equipment is for carrying out the vacuum chamber to vacuumize place
Reason, the atmosphere gas are passed through equipment for being passed through atmosphere gas into the vacuum chamber 20, to provide the film deposition of standard
Environment.
In the present embodiment, multiple targets 80 are evenly distributed on the target turntable 90.The target baffle 40 is set
It sets right above the target turntable 90 and immediately below the substrate warm table 30, is provided with target on the target baffle 40
Hole 41.The target turntable 90 can be rotated by rotating drive mechanism, to switch target baffle 40 described in different 80 faces of target
On target hole 41 and by the 45 degree of incidences of the pulse laser of the laser 10.The target baffle 90 can also move up and down,
To adjust the target baffle 90 at a distance from the substrate warm table 30.
The substrate warm table 30 is annular rotary table, multiple substrates 31 can by paste or install be uniformly fixed to it is described
On 30 bottom surface of substrate warm table.The substrate warm table 30 include rotating drive mechanism, can drive the substrate warm table 30 around
Axis rotation, to switch the target hole 41 on target baffle 40 described in 31 face of substrates of different.The target 80 is by pulse laser
Brightness plumage is generated after 45 degree of incidences, brightness plumage is passed through on the substrate 31 that the target hole 41 deposits on the substrate warm table 30 and sunk
Product is at film.
In the present embodiment, the thickness test module 50 is crystal oscillator test module, and the crystal oscillator test module 50 includes
Crystal oscillator unit 51, connecting rod 52 and shaft 53.The crystal oscillator unit 51 is arranged in 52 end of connecting rod, can be along described turn
Axis 53 horizontally rotates, so that the crystal oscillator unit 51 is moved to film deposition position, with the deposition rate of testing film.The target
Material baffle 40 is in the test notch 42 being provided with far from described 41 one end of target hole.When a upper film, which deposits, to be completed, controllably
The rotation of the substrate warm table 30 switching substrate 31 is made, the target turntable 90 is controlled and switches target 80, make new substrate and target
Deposition position is switched to deposit new film, make deposition film leave film deposition position and reach the target baffle 40
42 position of test notch, the thin film parameter test module 60 can be selected high-energy electron diffiraction module, configures in the test
It is tested at notch 42, the structured data of deposition film can be tested.
In the present embodiment, special purpose computer can be selected in the computer equipment 70, and the preparation ginseng of film can manually be arranged
Number, such as thin film composition, film thickness, depositing temperature, deposition atmosphere gas and vacuum degree etc..The computer equipment 70 may be used also
The routine of corresponding control film prepares environment, for example control vaccum-pumping equipment and atmosphere gas are passed through equipment and generate film deposition
Standard vacuum degree and atmosphere gas control the substrate warm table 30 and the target turntable 90 rotation and switch substrate 31 and target
Material 80 controls described sharp so that particular target 80 and particular substrate 31 are switched to the target hole 41 of target baffle 40 described in face
Light device 10 generates pulse laser and deposits etc. to particular target 80, improves the working efficiency and convenience of film preparation.Institute
Stating computer equipment 70 can also be further according to the deposition rate of the film of the thickness test module 50 test and the film
The supplemental characteristic for the deposition film that parametric testing module 60 is tested optimizes and revises the preparation parameter of film.Added by controlling substrate
Thermal station 30 and target turntable 90 rotate and switch substrate 31 and target 80, and according to the film deposition rate of test and have deposited thin
The preparation parameter of the supplemental characteristic adjusting and optimizing film of film, reduces time and the cost of film preparation, improves film preparation
Working efficiency and control convenience.
Referring to fig. 2, based on the above embodiment, the embodiment of the present invention also provides a kind of film system of impulse laser deposition system
Preparation Method, comprising:
Step S101: film preparation parameter is arranged in control computer equipment, and corresponding control film preparation environment progress is thin
Film deposition.
In the present embodiment, the impulse laser deposition system in a kind of above-described embodiment is provided, control computer equipment is set
Film preparation parameter is set, and corresponding control film preparation environment carries out film deposition.Specifically, the control calculates referring to Fig. 3
Film preparation parameter is arranged in machine equipment and corresponding control film preparation environment carries out film deposition, specifically includes:
Step S201: film preparation parameter is arranged in control computer equipment.
Step S202: multiple substrates are fixed on the substrate warm table, and multiple targets are installed.
Step S203: the target hole of control particular target face target baffle.
Step S204: control laser generates pulse laser and bombards progress film deposition to the particular target.
In the present embodiment, special purpose computer can be selected in the computer equipment, and the preparation parameter of film can manually be arranged,
Such as thin film composition, film thickness, depositing temperature, deposition atmosphere gas and vacuum degree etc..The computer equipment can also correspond to
The routine of control film prepares environment, for example control vaccum-pumping equipment and atmosphere gas are passed through the standard that equipment generates film deposition
Multiple substrates are fixed on the substrate warm table and are installed multiple targets by vacuum degree and atmosphere gas, control, control substrate
Warm table and target turntable rotate and switch substrate and target, so that particular target and particular substrate are switched to face target baffle
Target hole, control laser generate pulse laser particular target is deposited etc., improve the working efficiency of film preparation
With control convenience.
Step S102: control thickness test module is moved to the deposition rate of film deposition position and testing film.
In the present embodiment, the thickness test module selects crystal oscillator test module, and crystal oscillator test module edge can control to turn
Axis horizontally rotates, so that crystal oscillator unit is moved to film deposition position, it is convenient and efficient, accurate with the deposition rate of testing film
Ground detects the deposition rate of current film.
Step S103: the supplemental characteristic of the deposition film of control thin film parameter test module test.
In the present embodiment, when a upper film, which deposits, to be completed, substrate warm table rotation switching substrate, control be can control
Target turntable switch target, so that new substrate and target is switched to deposition position to deposit new film, make deposition film leave
Film deposition position and the test gap position for reaching target baffle pass through the thin film parameter test module test of test indentation, there
The thickness and structured data of deposition film, convenient and efficient, accurately test to deposition film supplemental characteristic.
Step S104: the deposition rate for the film that control computer equipment is tested according to the thickness test module and described
The preparation parameter of the supplemental characteristic adjustment film of the deposition film of thin film parameter test module test.
In the present embodiment, the computer equipment is further according to the deposition of the film of thickness test module test
The supplemental characteristic of rate and the deposition film of thin film parameter test module test optimizes and revises the preparation parameter of film, leads to
It crosses control substrate warm table and the rotation of target turntable and switches substrate and target, and according to the film deposition rate of test and sunk
The preparation parameter of the supplemental characteristic adjusting and optimizing film of product film, reduces time and the cost of film preparation, improves film system
Standby working efficiency and control convenience.
Referring to fig. 4, in another embodiment of the invention, a kind of method for manufacturing thin film of laser deposition system is also provided,
Include:
Step S401: film preparation parameter is arranged in control computer equipment, and corresponding control film preparation environment progress is thin
Film deposition.
Step S402: control thickness test module is moved to the deposition rate of film deposition position and testing film.
Step S403: the supplemental characteristic of the deposition film of control thin film parameter test module test.
Step S404: the deposition rate for the film that control computer equipment is tested according to the thickness test module and described
The preparation parameter of the supplemental characteristic adjustment film of the deposition film of thin film parameter test module test.
Step S405: control switching target is to prepare the combined material comprising a variety of target material compositions.
In the present embodiment, according to the film deposition rate of test and the supplemental characteristic adjusting and optimizing film of deposition film
Preparation parameter on the basis of, further by control target turntable rotation switch target, with preparation comprising a variety of targets at
The combined material divided improves the working efficiency and control convenience of multi-component material film preparation.
It should be appreciated that each section of the invention can be realized with hardware, software, firmware or their combination.Above-mentioned
In embodiment, software that multiple steps or method can be executed in memory and by suitable instruction execution system with storage
Or firmware is realized.It, and in another embodiment, can be under well known in the art for example, if realized with hardware
Any one of column technology or their combination are realized: having a logic gates for realizing logic function to data-signal
Discrete logic, with suitable combinational logic gate circuit specific integrated circuit, programmable gate array (PGA), scene
Programmable gate array (FPGA) etc..
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The descriptions such as example " or " some examples " mean particular features, structures, materials, or characteristics described in conjunction with this embodiment or example
It is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are different
Surely identical embodiment or example is referred to.Moreover, particular features, structures, materials, or characteristics described can be any
It can be combined in any suitable manner in one or more embodiment or examples.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that: not
A variety of change, modification, replacement and modification can be carried out to these embodiments in the case where being detached from the principle of the present invention and objective, this
The range of invention is defined by the claims and their equivalents.
Claims (13)
1. a kind of impulse laser deposition system, including laser, vacuum chamber, substrate warm table, vaccum-pumping equipment and atmosphere gas
It is passed through equipment, which is characterized in that it further include target baffle, thickness test module, thin film parameter test module and computer equipment,
The target baffle plate setting immediately below the substrate warm table, the target baffle plate setting have can face target target hole,
The computer equipment controls film preparation environment and according to thickness test for film preparation parameter to be arranged and corresponds to
The supplemental characteristic adjustment of the deposition rate of the film of module testing and the deposition film of thin film parameter test module test
The preparation parameter of film.
2. impulse laser deposition system according to claim 1, which is characterized in that the substrate warm table includes that rotation is driven
Motivation structure, for driving the substrate warm table around axis rotation, to switch the target on target baffle described in substrates of different face
Material hole.
3. impulse laser deposition system according to claim 1, which is characterized in that the substrate warm table is annular circle
Platform, multiple substrates can be uniformly fixed on substrate warm table bottom surface by pasting or installing.
4. impulse laser deposition system according to claim 1, which is characterized in that the target baffle is far from the target
The test notch that material hole one end is provided with, thin film parameter test module setting the gap position with test deposited it is thin
The thin film parameter of film.
5. impulse laser deposition system according to claim 1, which is characterized in that the thickness test module is crystal oscillator survey
Die trial block, the thin film parameter test module are high-energy electron diffiraction module.
6. impulse laser deposition system according to claim 5, which is characterized in that the crystal oscillator test module includes crystal oscillator
Unit, connecting rod and shaft, the crystal oscillator unit are arranged in the connecting rod end and can horizontally rotate along the shaft, with
The crystal oscillator unit is set to be moved to film deposition position.
7. impulse laser deposition system according to claim 1, which is characterized in that further include the target for installing multiple targets
Turntable, the target turntable can be rotated to switch the target hole on target baffle described in different target faces and by the laser
45 degree of incidences of pulse laser.
8. impulse laser deposition system according to claim 1, which is characterized in that the target baffle can move up and down
To adjust the target baffle at a distance from the substrate warm table.
9. a kind of method for manufacturing thin film of impulse laser deposition system as claimed in any one of claims 1 to 8, feature exist
In, comprising:
It controls computer equipment and film preparation parameter is set, and corresponding control film preparation environment carries out film deposition；
Control thickness test module is moved to the deposition rate of film deposition position and testing film；
Control the supplemental characteristic of the deposition film of thin film parameter test module test；And
The deposition rate for the film that control computer equipment is tested according to the thickness test module and the thin film parameter are tested
The preparation parameter of the supplemental characteristic adjustment film of the deposition film of module testing.
10. the method for manufacturing thin film of impulse laser deposition system according to claim 9, which is characterized in that in the control
Made membrane is prepared after environment progress film deposition, further includes: after the completion of film deposition, control switching target and substrate are with heavy
The new film of product.
11. the method for manufacturing thin film of impulse laser deposition system according to claim 9, which is characterized in that the control
Film preparation parameter is arranged in computer equipment and corresponding control film preparation environment carries out film deposition, comprising:
It controls computer equipment and film preparation parameter is set；
Multiple substrates are fixed on the substrate warm table, and multiple targets are installed；
Control the target hole of particular target face target baffle；And
It controls laser and generates pulse laser to particular target bombardment progress film deposition.
12. the method for manufacturing thin film of impulse laser deposition system according to claim 9, which is characterized in that the film
Preparation parameter includes thin film composition, film thickness, depositing temperature, deposition atmosphere gas and vacuum degree.
13. the method for manufacturing thin film of impulse laser deposition system according to claim 9, which is characterized in that further include: control
Switch target to prepare the combined material comprising a variety of target material compositions.
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| CN201810819730 | 2018-07-24 | ||
| CN2018108197302 | 2018-07-24 |
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| CN201811172619.5A Pending CN109487219A (en) | 2018-07-24 | 2018-10-09 | Impulse laser deposition system and its method for manufacturing thin film |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110306160A (en) * | 2019-08-09 | 2019-10-08 | 中国科学院上海微系统与信息技术研究所 | High flux film depositing device and membrane deposition method |
| CN110670044A (en) * | 2019-11-27 | 2020-01-10 | 昆山国显光电有限公司 | Film formation thickness detection device, detection method and evaporation equipment |
| CN114045468A (en) * | 2021-11-01 | 2022-02-15 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | Thin film deposition apparatus, physical vapor deposition device, and thin film deposition method |
| CN114959627A (en) * | 2022-06-09 | 2022-08-30 | 清华大学 | Ultra-clean PLD sample preparation and transfer system and method |
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| CN110306160A (en) * | 2019-08-09 | 2019-10-08 | 中国科学院上海微系统与信息技术研究所 | High flux film depositing device and membrane deposition method |
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| CN110670044B (en) * | 2019-11-27 | 2021-10-01 | 昆山国显光电有限公司 | Film formation thickness detection device, detection method and evaporation equipment |
| CN114045468A (en) * | 2021-11-01 | 2022-02-15 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | Thin film deposition apparatus, physical vapor deposition device, and thin film deposition method |
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