CN110306160A - High flux film depositing device and membrane deposition method - Google Patents
High flux film depositing device and membrane deposition method Download PDFInfo
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- CN110306160A CN110306160A CN201910734707.8A CN201910734707A CN110306160A CN 110306160 A CN110306160 A CN 110306160A CN 201910734707 A CN201910734707 A CN 201910734707A CN 110306160 A CN110306160 A CN 110306160A
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- baffle
- substrate
- high flux
- workbench
- flux film
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
It includes: reaction chamber that the present invention, which provides a kind of high flux film depositing device and membrane deposition method, high flux film depositing device,；Workbench is located in reaction chamber；Baffle is located in reaction chamber, and is located at the top of workbench, has spacing with workbench；Baffle is equipped with the perforative through-hole of thickness direction along baffle；Driving device is connected at least one of both workbench and baffle；Material source is located in reaction chamber, and is located at the top of baffle, has spacing with baffle.High flux film depositing device structure of the invention is simple, horizontal translational components are few, cost is relatively low；Substrate on workbench can not move horizontally, and may be implemented to heat substrate；It is easily integrated online test device and other external equipments.
Description
Technical field
The invention belongs to gas phase deposition technology fields, deposit more particularly to a kind of high flux film depositing device and film
Method.
Background technique
One binary system materials AxB1-x(the wherein component ratio that x is elements A), if 10 kind ingredients of the selection x from 0 to 1
Combination, then can obtain materials A substantiallyxB1-xPerformance.If it is the materials A of a ternary systemxByC1-x-yIf relatively more complete
The research in face needs x, and 10 values of y selection 0 to 1 independent, this just generates the combination of 10 × 10=100 kind, could compare
It is comprehensive to obtain AxByC1-x-yPerformance.Same reasoning, a quaternary material AxByCzD1-x-y-z, need 1000 kinds of combinations
Research could be than more comprehensively obtaining the performance of material.It should be noted that above-mentioned A, B, C and D are the masurium in material
Claim.
The preparation and test experiments require a great deal of time and cost that 100 and 1000 material compositions combine.Therefore,
It is necessary using high-throughput experimental facilities.High flux film depositing device, can be short for manufacturing multielement ma-terial film
A large amount of elemental composition combination is realized in time, and then multielement ma-terial system can be done and more fully be studied, and can root
It is selected according to the demand of application optimal at subassembly.
However, existing high pass film deposition equipment exists, structure is complicated, it is at high cost, be not easy to heat, moving parts is more and
The problems such as working efficiency is low.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of high flux film depositing devices
And membrane deposition method, for solve high pass film deposition equipment in the prior art exist structure is complicated, it is at high cost, be not easy plus
The problems such as heat, moving parts are more and working efficiency is low.
In order to achieve the above objects and other related objects, the present invention provides a kind of high flux film depositing device, the height
Flux film deposition equipment includes:
Reaction chamber；
Workbench is located in the reaction chamber, for carrying substrate；
Baffle is located in the reaction chamber, and is located at the top of the workbench, has spacing with the workbench；
The baffle is equipped at least one along the perforative through-hole of thickness direction of the baffle；
Driving device is connected, for driving the work at least one of both the workbench and the baffle
Make at least one of both platform and the baffle to move horizontally or rotate, to change the opposite position of the through-hole Yu the substrate
It sets；
Material source is located in the reaction chamber, and is located at the top of the baffle, has spacing with the baffle；Institute
Material source is stated for particle needed for generating deposition.
Optionally, the material source includes at least one target rifle.
Optionally, the driving device is connected with the baffle, for driving the baffle along both horizontally and vertically
It is mobile.
Optionally, the through hole center deviates the center of the substrate；The driving device is connected with the workbench,
For driving the worktable rotary.
Optionally, the center of substrate described in the center deviation of the through-hole；The driving device is connected with the baffle,
For driving the baffle to rotate.
Optionally, the driving device includes:
First driving device is connected with the workbench, for driving the worktable rotary；
Second driving device is connected with the baffle, for driving the baffle edge both horizontally and vertically to move.
Optionally, the center of substrate described in the center deviation of the through-hole；The driving device includes:
First driving device is connected with the workbench, for driving the worktable rotary；
Second driving device is connected with the baffle, for driving the baffle to rotate.
Optionally, the material source includes target rifle, the high flux film depositing device further include:
Angular adjustment apparatus, the angular adjustment apparatus are connected with the target rifle, for adjusting the sputtering of the target rifle
Angle of the face compared to the baffle.
Optionally, the high flux film depositing device further includes height adjustment device, is connected with the target rifle, is used for
Drive the target rifle vertical shift.
Optionally, the high flux film depositing device further include:
Transfer chamber, positioned at the side of the reaction chamber；
Mechanical arm is located in the transfer chamber, for transmitting between the transfer chamber and the reaction chamber
The substrate；The transfer chamber is connected when the mechanical arm transmits the substrate with the reaction chamber.
Optionally, the high flux film depositing device further includes heating device, and the heating device is located at the work
The bottom of platform or positioned at the periphery of the workbench, for being heated for the substrate on the workbench.
Optionally, the high flux film depositing device further includes alignment sensor, is connected with the driving device, is used
At least one of both described workbench and the baffle is driven to move horizontally or revolve in detecting and controlling the driving device
Go to predeterminated position.
Optionally, the high flux film depositing device further include:
Protective gas feed system, including protective gas source, first flowmeter and the first feeding pipe；First supply
Pipeline one end is connected with the protective gas source, and the other end extends in the reaction chamber；The first flowmeter is located at
On first feeding pipe；
Reaction gas feed system, including reacting gas source, second flowmeter and the second feeding pipe；Second supply
Pipeline one end is connected with the reacting gas source, and the other end extends in the reaction chamber, and extend to the through-hole with
Between the substrate；The second flowmeter is located on second feeding pipe.
Optionally, the high flux film depositing device further includes real-time measurement apparatus, for the upper table to the substrate
Face deposition film carry out include elemental composition, film thickness, microstructure characterization；The measurement end of the real-time measurement apparatus
In the reaction chamber, and between the workbench and the substrate.
The present invention also provides a kind of membrane deposition method, the membrane deposition method includes the following steps:
1) the high flux film depositing device as described in above-mentioned either a program is provided；
2) particle is generated using the material source, the particle carries out by the through-hole in a region of the substrate thin
Film deposition；
3) moved horizontally using the driving device driving at least one of both described workbench and the baffle or
Rotation is to predeterminated position, to carry out film deposition in another region of the substrate；
4) it repeats step 3) at least once, carries out film deposition respectively with multiple and different regions in the substrate.
It optionally, further include that reaction gas is passed through between the through-hole and the substrate in step 2), the reaction gas
Body and the particle reaction form the film.
Optionally, it further includes heating to the substrate that the surface of Yu Suoshu substrate, which is formed while carrying out film deposition,
The step of.
As described above, high flux film depositing device of the invention and membrane deposition method have the advantages that
High flux film depositing device structure of the invention is simple, horizontal translational components are few, cost is relatively low；It is flat positioned at work
Substrate on platform can not move horizontally, and may be implemented to heat substrate；Be easily integrated online test device and other outside
Portion's equipment.
Detailed description of the invention
Fig. 1 is shown as the structural schematic diagram of the high flux film depositing device provided in the embodiment of the present invention one.
Fig. 2 is shown as the flow chart of the membrane deposition method provided in the embodiment of the present invention two.
Component label instructions
1 reaction chamber
2 workbench
3 baffles
31 through-holes
4 target rifles
5 transfer chambers
6 mechanical arms
7 alignment sensors
81 protective gas feed systems
811 first flowmeters
812 first feeding pipes
82 reaction gas feed systems
821 second flowmeters
822 second feeding pipes
9 real-time measurement apparatus
Specific embodiment
Embodiments of the present invention are illustrated by particular specific embodiment below, those skilled in the art can be by this explanation
Content disclosed by book is understood other advantages and efficacy of the present invention easily.
Fig. 1 is please referred to Fig. 2.It should be clear that this specification structure depicted in this specification institute accompanying drawings, ratio, size etc., only to
Cooperate the revealed content of specification, so that those skilled in the art understands and reads, being not intended to limit the invention can be real
The qualifications applied, therefore do not have technical essential meaning, the tune of the modification of any structure, the change of proportionate relationship or size
It is whole, in the case where not influencing the effect of present invention can be generated and the purpose that can reach, it should all still fall in disclosed skill
Art content obtains in the range of capable of covering.Meanwhile in this specification it is cited as "upper", "lower", "left", "right", " centre " and
The term of " one " etc. is merely convenient to being illustrated for narration, rather than to limit the scope of the invention, relativeness
It is altered or modified, under the content of no substantial changes in technology, when being also considered as the enforceable scope of the present invention.
Embodiment one
Referring to Fig. 1, the present invention also provides a kind of high flux film depositing device, the high flux film depositing device packet
It includes: reaction chamber 1；Workbench 2, the workbench 2 are located in the reaction chamber 1, and the workbench 2 is for carrying substrate
(not shown)；Baffle 3, the baffle 3 are located in the reaction chamber 1, and the baffle 3 is located at the top of the workbench 2,
And there is spacing with the workbench 2；It is perforative logical along the thickness direction of the baffle 3 that the baffle 3 is equipped at least one
Hole 31；Driving device (not shown), at least one of the driving device and both the workbench 2 and the baffle 3 phase
Connection, the driving device is for driving at least one of both described workbench 2 and the baffle 3 to move horizontally or revolve
Turn, to change the relative position of the through-hole 31 and the substrate；Material source, the material source are located in the reaction chamber 1,
And the material source is located at the top of the baffle 3, and has spacing with the baffle 3；The material source is for generating deposition
Required particle.
In one example, can be connected for the driving device with the baffle 3, the driving device is for driving institute
Baffle 3 is stated to move both horizontally and vertically.The particle that the material source generates again is needed by 31 ability of through-hole
It deposits to form film on the surface of the substrate, by driving the baffle 3 to move both horizontally and vertically, Ke Yigai
Become the relative position of the through-hole 31 and the substrate being located on the workbench 2, it can realize different in the substrate
Film deposition is carried out on position.Specifically, in the example, the driving device may include drive rod and drive motor, described
Drive rod one end is connected with the baffle 3, and the other end is connected with the drive motor, and the drive motor drives the drive
Lever is moved to drive the baffle 3 to move both horizontally and vertically.In this example, not due to the workbench 2
It needs to move in the horizontal direction, i.e., the described substrate does not need to move in the horizontal direction, can easily realize to the substrate
It is heated.
In another example, the center of substrate described in the center deviation of the through-hole 31；The driving device can be with institute
It states workbench 2 to be connected, the driving device is for driving the workbench 2 to rotate.By driving the workbench 2 to rotate,
The center of substrate described in the center deviation of the through-hole 31 again, thus it is possible to vary the through-hole 31 be located on the workbench 2
The progress film deposition on the substrate different location can be realized in the relative position of the substrate.Specifically, in the example
In, the driving device may include drive motor.In this example, since the workbench 2 does not need to move in the horizontal direction
Dynamic, i.e., the described substrate does not need to move in the horizontal direction, can easily realize and heat to the substrate.
In another example, the center of substrate described in the center deviation of the through-hole 31；The driving device can be with institute
It states baffle 3 to be connected, the driving device is for driving the baffle 3 to rotate.By driving the baffle 3 to rotate, but it is described
The center of substrate described in the center deviation of through-hole 3, thus it is possible to vary the through-hole 31 and the substrate being located on the workbench 2
Relative position, progress film deposition can be realized on the substrate different location.Specifically, in the example, the driving
Device may include drive rod and drive motor, and described drive rod one end is connected with the baffle 3, the other end and the driving
Motor is connected, and the drive motor drives the drive rod movement to drive the baffle 3 to rotate.In this example, due to
The workbench 2 does not need to move in the horizontal direction, i.e., the described substrate does not need to move in the horizontal direction, can be easily real
Now the substrate is heated.
In another example, the driving device can also include: first driving device, and the first driving device can be with
It is connected with the workbench 2, the first driving device is for driving the workbench 2 to rotate；Second driving device, it is described
Second driving device can be connected with the baffle 3, and second driving device is for driving the baffle 3 in the horizontal direction
It is mobile with vertical direction.By driving the workbench 2 to rotate and the baffle 3 being driven to move both horizontally and vertically
It is dynamic, thus it is possible to vary the relative position of the through-hole 31 and the substrate being located on the workbench 2 can be realized in the lining
Film deposition is carried out on the different location of bottom.In this example, since the workbench 2 does not need to move in the horizontal direction, i.e. institute
It states substrate not needing to move in the horizontal direction, can easily realize and the substrate is heated.
In another example, the center of substrate described in the center deviation of the through-hole 31；The driving device includes: first
Driving device, the first driving device are connected with the workbench 2, and the first driving device is for driving the work
Platform 2 rotates；Second driving device, second driving device are connected with the baffle 3, and second driving device is for driving
The baffle 3 is moved to rotate.By driving the workbench 2 to rotate, and the baffle 3 is driven to rotate, and in the through-hole 31
The heart deviates the center of the substrate, thus it is possible to vary the opposite position of the through-hole 31 and the substrate being located on the workbench 2
It sets, the progress film deposition on the substrate different location can be realized.In this example, since the workbench 2 does not need
It moves in the horizontal direction, i.e., the described substrate does not need to move in the horizontal direction, can easily realize and carry out to the substrate
Heating.
In above-mentioned each example, the only described baffle 3 needs to move both horizontally and vertically or even the baffle
3 and the workbench 2 do not need to move in the horizontal direction, horizontal translational components are few in whole equipment, and speed ratio is along level side
It is easy to accomplish to movement, whole equipment it is relatively simple for structure.
As an example, the baffle 3 can cover the substrate in the orthographic projection of plane where the substrate.
As an example, the material source includes at least one target rifle 4, the quantity of the target rifle 4 can be according to actual needs
It is configured, only with four target rifles 4 as an example, but being not limited thereto in actual example in Fig. 1；The high throughput
Film deposition equipment further include: angular adjustment apparatus (not shown), the angular adjustment apparatus are connected with the target rifle 4, institute
Angular adjustment apparatus is stated for adjusting angle of the sputter face compared to the baffle 3 of the target rifle 4.By adjusting the target rifle
Angle of 4 sputter face compared to the baffle 3, it can be ensured that the sputtering path of each target rifle 4 passes through described logical always
Hole 31, to ensure that the particle that the target rifle 4 sputters can deposit to form film across the through-hole 31 on the surface of the substrate.
The angular adjustment apparatus may include drive rod and drive motor, and described drive rod one end is connected with the drive motor,
The other end is connected with the target rifle 4, and the drive motor drives the drive rod movement to drive needed for the target rifle overturning
Angle.Certainly, any device that 4 angle of the target rifle adjustment may be implemented is used equally for herein.
As an example, the high flux film depositing device further includes height adjustment device (not shown), the height tune
Regulating device is connected with the target rifle 4, and the height adjustment device is for driving 4 vertical shift of target rifle.The height tune
Regulating device may include but be not limited only to adjusting rod, the specific structure of adjusting rod dawn known to those skilled in the art, this
Place is not repeated.
As an example, the high flux film depositing device further include: transfer chamber 5, the transfer chamber 5 are located at described
The side of reaction chamber 1；Mechanical arm 6, the mechanical arm 6 are located in the transfer chamber 5, and the mechanical arm 6 is used for
The substrate is transmitted between the transfer chamber 5 and the reaction chamber 1；The transfer chamber 5 is passed in the mechanical arm 6
It send and is connected when the substrate with the reaction chamber 1.
As an example, the high flux film depositing device further includes heating device (not shown), the heating device position
In the bottom of the workbench 2 or positioned at the periphery of the workbench 2, the heating device is used for as on the workbench 2
The substrate is heated.Specific knot for the heating device heated for the substrate on the workbench 2
It structure dawn known to those skilled in the art, is not repeated herein.
As an example, the high flux film depositing device further includes alignment sensor 7, the alignment sensor 7 and institute
It states driving device to be connected, the alignment sensor 7 drives the workbench 2 and institute for detecting and controlling the driving device
At least one of both baffles 3 are stated to move horizontally or rotate to predeterminated position.Specifically, the alignment sensor 7 can wrap
Include detecting module (not shown) and processing module (not shown), wherein the detecting module is for detecting the workbench 2 and institute
Stating the position of at least one of both baffles 3, (the i.e. described detecting module is for detecting the workbench 2 and the baffle 3 two
Need to move horizontally in person or the position of revolver), the processing module is connected with the detecting module and the driving device
It connects, the location information for detecting the detecting module is compared with target information, and in the workbench 2 and search gear
Control signal is sent to the driving device when both plates 3 are moved to predeterminated position, the driving device is controlled and stops driving.
As an example, the high flux film depositing device further include: protective gas feed system 81, the protective gas
Feed system 81 includes protective gas source (not shown), first flowmeter 811 and the first feeding pipe 812；First supply
812 one end of pipeline is connected with the protective gas source, and the other end extends in the reaction chamber 1；The first flowmeter
811 are located on first feeding pipe 812；Reaction gas feed system 82, the reaction gas feed system 82 include anti-
Answer gas source (not shown), second flowmeter 821 and the second feeding pipe 822；Described second feeding pipe, 822 one end with it is described
Reacting gas source is connected, and the other end extends in the reaction chamber 1, and extend to the through-hole 31 and the substrate it
Between；The second flowmeter 821 is located on second feeding pipe 822.The reaction gas that second feeding pipe 822 provides
The particle reaction that body can be generated with the material source forms the film with the surface in the substrate.The reaction gas
Body is passed near the through-hole 31 by the lower part of the baffle 3, can be polluted to avoid to the material source.
Specifically, first feeding pipe 812 can extend to the baffle 3 far from the one end in the protective gas source
Top, the lower section of the baffle 3 can also be extended to.
Specifically, the protective gas source, the first flowmeter 811, first feeding pipe 812, the reaction
The quantity of gas source, the second flowmeter 821 and second feeding pipe 822 can be set according to actual needs,
In Fig. 1 only with the protective gas source, the first flowmeter 811, first feeding pipe 812, the reacting gas source,
The second flowmeter 821 and the quantity of second feeding pipe 822 are two as example.
As an example, the high flux film depositing device further includes real-time measurement apparatus 9, the real-time measurement apparatus 9
Film for the upper surface deposition to the substrate carries out including but are not limited to elemental composition, film thickness and microstructure
Characterization；The measurement end of the real-time measurement apparatus 9 is located in the reaction chamber 1, and is located at the workbench 2 and the lining
Between bottom.Specifically, the real-time measurement apparatus 9 may include but be not limited only to Auger Electron Spectroscopy (AES).
The working principle of high flux film depositing device of the present invention are as follows: firstly, by the baffle 3 or the work
Platform 2 is adjusted, so that the through-hole 31 is directed at first deposition region of the substrate, generates particle using the material source
To carry out film deposition in first deposition region；Then, it drives in 3 the two of the workbench 2 and the baffle at least
One is moved horizontally or is rotated, so that the through-hole 31 is directed at second deposition region of the substrate, uses the material source
Particle is generated to repeat the above steps to carry out film deposition ... in second deposition region until film deposition finishes.
High flux film depositing device structure of the invention is simple, horizontal translational components are few, cost is relatively low；It is flat positioned at work
Substrate on platform can not move horizontally, and may be implemented to heat substrate.
Embodiment two
Incorporated by reference to Fig. 1 referring to Fig.2, the present invention provides a kind of membrane deposition method, the membrane deposition method includes as follows
Step:
1) the high flux film depositing device as described in embodiment one kind is provided；
2) particle is generated using the material source, the particle carries out thin by a region of the through-hole and the substrate
Film deposition；
3) moved horizontally using the driving device driving at least one of both described workbench and the baffle or
Rotation is to predeterminated position, to carry out film deposition in another region of the substrate；
4) it repeats step 3) at least once, carries out film deposition respectively with multiple and different regions in the substrate.
In step 1), incorporated by reference to Fig. 1 refering to the S1 step in Fig. 2, the high throughput provided as described in embodiment one kind is thin
Film deposition apparatus.The specific structure of the high flux film depositing device please refers to embodiment one, is not repeated herein.
In step 2), incorporated by reference to Fig. 1 refering to the S2 step in Fig. 2, particle, the particle are generated using the material source
Film deposition is carried out in a region of the substrate by the through-hole 31.
In one example, it can be deposited by the particle that the material source generates in a region of the substrate
To form film.
It in another example, further include to the through-hole 31 and the lining while generating particle using the material source
Reaction gas is passed through between bottom, the reaction gas and the particle reaction form the film.Specifically, can be using implementation
Reaction gas feed system 82 described in example one is passed through the reaction gas between the through-hole 31 and the substrate.
As an example, further including adding to the substrate while surface of the substrate forms and carries out film deposition
The step of heat.Specifically, can be heated using the heating device as described in embodiment one to the substrate.
In step 3), incorporated by reference to Fig. 1 refering to the S3 step in Fig. 2, the workbench 2 is driven using the driving device
And at least one of both described baffles 3 are moved horizontally or are rotated to predeterminated position, in another region of the substrate into
Row film deposition.
In one example, it can be sunk by the particle that the material source generates in another region of the substrate
Product is to form film.
It in another example, further include to the through-hole 31 and the lining while generating particle using the material source
Reaction gas is passed through between bottom, the reaction gas and the particle reaction form the film.Specifically, can be using implementation
Reaction gas feed system 82 described in example one is passed through the reaction gas between the through-hole 31 and the substrate.
As an example, further including adding to the substrate while surface of the substrate forms and carries out film deposition
The step of heat.Specifically, can be heated using the heating device as described in embodiment one to the substrate.
In step 4), incorporated by reference to Fig. 1 refering to the S4 step in Fig. 2, step 3) is repeated at least once, in the substrate
Multiple and different regions carry out film deposition respectively.
In conclusion the present invention provides a kind of high flux film depositing device and membrane deposition method, the high throughput are thin
Film deposition apparatus includes: reaction chamber；Workbench is located in the reaction chamber, for carrying substrate；Baffle is located at described
In reaction chamber, and it is located at the top of the workbench, there is spacing with the workbench；The baffle is equipped at least one
Along the perforative through-hole of the thickness direction of the baffle；At least one in driving device, with the workbench and described baffle the two
Person is connected, for driving at least one of both described workbench and the baffle to move horizontally or rotating, to change
State the relative position of through-hole Yu the substrate；Material source is located in the reaction chamber, and is located at the top of the baffle, with
The baffle has spacing；Particle needed for the material source is used to generate deposition.High flux film depositing device of the invention
Structure is simple, horizontal translational components are few, cost is relatively low；Substrate on workbench can not move horizontally, and may be implemented
Substrate is heated；It is easily integrated online test device and other external equipments.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (17)
1. a kind of high flux film depositing device, which is characterized in that the high flux film depositing device includes:
Reaction chamber；
Workbench is located in the reaction chamber, for carrying substrate；
Baffle is located in the reaction chamber, and is located at the top of the workbench, has spacing with the workbench；It is described
Baffle is equipped at least one along the perforative through-hole of thickness direction of the baffle；
Driving device is connected, for driving the workbench at least one of both the workbench and the baffle
And at least one of both described baffles are moved horizontally or are rotated, to change the relative position of the through-hole Yu the substrate；
Material source is located in the reaction chamber, and is located at the top of the baffle, has spacing with the baffle；The material
Particle needed for material source is used to generate deposition.
2. high flux film depositing device according to claim 1, which is characterized in that the material source includes at least one
Target rifle.
3. high flux film depositing device according to claim 1, which is characterized in that the driving device and the baffle
It is connected, for driving the baffle edge both horizontally and vertically to move.
4. high flux film depositing device according to claim 1, which is characterized in that described in the center deviation of the through-hole
The center of substrate；The driving device is connected with the workbench, for driving the worktable rotary.
5. high flux film depositing device according to claim 1, which is characterized in that described in the center deviation of the through-hole
The center of substrate；The driving device is connected with the baffle, for driving the baffle to rotate.
6. high flux film depositing device according to claim 1, which is characterized in that the driving device includes:
First driving device is connected with the workbench, for driving the worktable rotary；
Second driving device is connected with the baffle, for driving the baffle edge both horizontally and vertically to move.
7. high flux film depositing device according to claim 1, which is characterized in that described in the center deviation of the through-hole
The center of substrate；The driving device includes:
First driving device is connected with the workbench, for driving the worktable rotary；
Second driving device is connected with the baffle, for driving the baffle to rotate.
8. high flux film depositing device according to any one of claims 4 to 7, which is characterized in that the material source
Including target rifle, the high flux film depositing device further include:
Angular adjustment apparatus, the angular adjustment apparatus are connected with the target rifle, for adjusting the sputter face phase of the target rifle
Compared with the angle of the baffle.
9. high flux film depositing device according to claim 8, which is characterized in that the high flux film depositing device
Further include height adjustment device, be connected with the target rifle, for driving the target rifle vertical shift.
10. high flux film depositing device according to claim 1, which is characterized in that the high flux film deposition is set
It is standby further include:
Transfer chamber, positioned at the side of the reaction chamber；
Mechanical arm is located in the transfer chamber, for described in the transmission between the transfer chamber and the reaction chamber
Substrate；The transfer chamber is connected when the mechanical arm transmits the substrate with the reaction chamber.
11. high flux film depositing device according to claim 1, which is characterized in that the high flux film deposition is set
Standby further includes heating device, and the heating device is located at the bottom of the workbench or positioned at the periphery of the workbench, is used for
It is heated for the substrate on the workbench.
12. high flux film depositing device according to claim 1, which is characterized in that the high flux film deposition is set
Standby further includes alignment sensor, is connected with the driving device, drives the work for detecting and controlling the driving device
Make at least one of both platform and the baffle to move horizontally or rotate to predeterminated position.
13. high flux film depositing device according to claim 1, which is characterized in that the high flux film deposition is set
It is standby further include:
Protective gas feed system, including protective gas source, first flowmeter and the first feeding pipe；First feeding pipe
One end is connected with the protective gas source, and the other end extends in the reaction chamber；The first flowmeter is located at described
On first feeding pipe；
Reaction gas feed system, including reacting gas source, second flowmeter and the second feeding pipe；Second feeding pipe
One end is connected with the reacting gas source, and the other end extends in the reaction chamber, and extend to the through-hole with it is described
Between substrate；The second flowmeter is located on second feeding pipe.
14. high flux film depositing device according to claim 1, which is characterized in that the high flux film deposition is set
Standby further includes real-time measurement apparatus, and the film for the upper surface deposition to the substrate carries out including elemental composition, film thickness
The characterization of degree, microstructure；The measurement end of the real-time measurement apparatus is located in the reaction chamber, and is located at the workbench
Between the substrate.
15. a kind of membrane deposition method, which is characterized in that the membrane deposition method includes the following steps:
1) the high flux film depositing device as described in any one of claims 1 to 14 is provided；
2) particle is generated using the material source, the particle carries out film in a region of the substrate by the through-hole and sinks
Product；
3) it moves horizontally or rotates using at least one of the driving device driving both described workbench and the baffle
To predeterminated position, to carry out film deposition in another region of the substrate；
4) it repeats step 3) at least once, carries out film deposition respectively with multiple and different regions in the substrate.
16. membrane deposition method according to claim 15, which is characterized in that further include in step 2) to the through-hole with
Reaction gas is passed through between the substrate, the reaction gas and the particle reaction form the film.
17. membrane deposition method according to claim 15, which is characterized in that it is thin that the surface of Yu Suoshu substrate forms progress
Film further includes the steps that heating the substrate while deposition.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910734707.8A CN110306160A (en) | 2019-08-09 | 2019-08-09 | High flux film depositing device and membrane deposition method |
| PCT/CN2019/119931 WO2021027173A1 (en) | 2019-08-09 | 2019-11-21 | High-throughput thin film deposition apparatus and thin film deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910734707.8A CN110306160A (en) | 2019-08-09 | 2019-08-09 | High flux film depositing device and membrane deposition method |
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| CN110306160A true CN110306160A (en) | 2019-10-08 |
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| CN201910734707.8A Pending CN110306160A (en) | 2019-08-09 | 2019-08-09 | High flux film depositing device and membrane deposition method |
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| CN (1) | CN110306160A (en) |
| WO (1) | WO2021027173A1 (en) |
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| CN112962067A (en) * | 2021-02-01 | 2021-06-15 | 北京中科泰龙电子技术有限公司 | Preparation device and method of high-flux film |
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| WO2021027173A1 (en) | 2021-02-18 |
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