CN112962067A - Preparation device and method of high-flux film - Google Patents
Preparation device and method of high-flux film Download PDFInfo
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- CN112962067A CN112962067A CN202110135381.4A CN202110135381A CN112962067A CN 112962067 A CN112962067 A CN 112962067A CN 202110135381 A CN202110135381 A CN 202110135381A CN 112962067 A CN112962067 A CN 112962067A
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- sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a preparation device and a preparation method of a high-flux film, which relate to the technical field of high-flux film preparation devices and mainly structurally comprise a sample table, a plurality of sputtering targets and a baffle plate; the sample stage is arranged in the middle of the sputtering targets and is separated from the sputtering targets by a certain distance; the baffle is movably arranged among the sputtering targets and is positioned right below the sample table. The power of the sputtering target is changed by adjusting the distance between the baffle and the sample table, so that coating films with different components are sputtered from the edge to the middle part of the sample table, the preparation of a plurality of samples can be completed by one-time vacuum pumping of the interior of the device, the time for preparing the samples is greatly shortened, and the research and development speed of materials is increased.
Description
Technical Field
The invention relates to the technical field of high-flux film preparation devices, in particular to a high-flux film preparation device and method.
Background
The development of new materials is a complex process, and usually, developers can only prepare one material with a single component at a time and test the relevant properties of the material. The traditional material research method with trial and error as a characteristic not only is time-consuming and labor-consuming, but also severely restricts the research and development speed of the material and needs higher research and development cost.
In view of this, more efficient material preparation methods must be explored.
Disclosure of Invention
In order to solve the technical problems, the invention provides a device and a method for preparing a high-flux film, which can prepare a plurality of materials with different components at one time, thereby improving the research and development speed of the materials.
In order to achieve the purpose, the invention provides the following scheme:
the invention provides a preparation device of a high-flux film, which comprises a sample table, a plurality of sputtering targets and a baffle plate; the sample stage is arranged in the middle of the sputtering targets and is separated from the sputtering targets by a certain distance; the baffle is movably arranged among the sputtering targets and is positioned right below the sample table.
Optionally, the baffle is in transmission connection with a linear driving mechanism.
Optionally, the linear driving mechanism is an air cylinder or a hydraulic cylinder or a linear motor.
Optionally, the baffle may cover the sample stage when in proximity to the sample stage, and the baffle may not cover the sample stage at all when in proximity to the plurality of sputtering targets.
Optionally, the baffle is a solid baffle or a baffle with a hollow structure.
Optionally, the sputtering system further comprises a control system for controlling the sputtering power of the plurality of sputtering targets and the position of the baffle plate.
The invention also discloses a preparation method of the preparation device of the high-flux film, which comprises the following steps:
s1: arranging a target material with required material components on each sputtering target, and adjusting the height and the angle of each sputtering target;
s2: vacuumizing the interior of the device, injecting sputtering gas, and adjusting the air pressure and temperature in the device and the sputtering power of a sputtering target;
s3: turning on a sputtering power switch to start sputtering and coating;
s4: in the sputtering process, the relative distance between the baffle and the sample platform is changed by adjusting the position of the baffle, so that one sputtering target or a plurality of sputtering targets is partially or completely shielded, the sputtering power of the sputtering targets is changed, and coating films with different components are sputtered from the edge to the middle part on the sample platform;
s5: and after the coating is finished, closing the sputtering power switch, and taking out the sample table to obtain a coating sample with various different components.
Compared with the prior art, the invention has the following technical effects:
the preparation device of the high-flux film mainly structurally comprises a sample table, at least two sputtering targets and a baffle plate; the power of the sputtering target is changed by adjusting the distance between the baffle and the sample table, so that coating films with different components are sputtered from the edge to the middle part of the sample table, the preparation of a plurality of samples can be completed by one-time vacuum pumping of the interior of the device, the time for preparing the samples is greatly shortened, and the research and development speed of materials is increased.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a schematic sectional view showing an apparatus for producing a high-throughput thin film according to the present invention;
FIG. 2 is a schematic side view of an apparatus for preparing a high flux thin film according to the present invention;
FIG. 3 is a schematic top view of an apparatus for preparing a high flux thin film according to the present invention.
Description of reference numerals: 1. a sputtering target; 2. a linear drive mechanism; 3. a baffle plate; 4. a sample stage.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
as shown in fig. 1 to 3, the present embodiment provides a high throughput thin film manufacturing apparatus, including a sample stage 4, a plurality of sputtering targets 1, and a baffle 3; the sample stage 4 is arranged in the middle of the sputtering targets 1 and is separated from the sputtering targets 1 by a certain distance; the baffle 3 is movably arranged between the sputtering targets 1 and is positioned right below the sample stage 4.
The baffle 3 is in transmission connection with a linear driving mechanism 2.
The linear driving mechanism 2 is a cylinder or a hydraulic cylinder or a linear motor.
The shutter 3 may completely cover the sample stage 4 when approaching the sample stage 4, and the shutter 3 may not cover the sample stage 4 at all when approaching the plurality of sputtering targets 1. The baffle is solid baffle or has hollow out construction's baffle, selects solid baffle in this embodiment.
The manufacturing apparatus of a high-throughput thin film in this embodiment further includes a control system for controlling the sputtering powers of the plurality of sputtering targets 1 and the positions of the shutter plates 3.
Parameters of the control system are set according to the amount of material to be prepared, and specifically include the gas pressure inside the apparatus, the temperature, the sputtering power of the sputtering target 1, and the moving time and the moving distance of the shutter 3.
In the initial position, the baffle 3 is close to the sample stage 4 to completely cover the sample stage 4, so that the material ejected from the sputtering target 1 cannot be sputtered onto the sample stage 4, then the distance between the baffle 3 and the sample stage 4 is changed, the sputtering power of the sputtering target 1 is changed, and a coating sample with various different components is obtained on the sample stage 4, wherein the components of the coating sample from the edge to the middle are different.
Example two:
the embodiment discloses a method for preparing a device based on a high-flux thin film in the first embodiment, which comprises the following steps:
s1: placing a target material with required material components on each sputtering target 1, and adjusting the height and the angle of each sputtering target 1;
s2: vacuumizing the interior of the device, injecting sputtering gas, and adjusting the air pressure and temperature in the device and the sputtering power of the sputtering target 1;
s3: turning on a sputtering power switch to start sputtering and coating;
s4: in the sputtering process, the relative distance between the baffle and the sample platform is changed by adjusting the position of the baffle, so that one sputtering target or a plurality of sputtering targets is partially or completely shielded, the sputtering power of the sputtering targets is changed, and coating films with different components are sputtered from the edge to the middle part on the sample platform;
s5: and after the coating is finished, closing the sputtering power switch, and taking out the sample table 4 to obtain a coating sample with various different components.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
The principle and the implementation mode of the present invention are explained by applying specific examples in the present specification, and the above descriptions of the examples are only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (7)
1. The device for preparing the high-flux film is characterized by comprising a sample table, a plurality of sputtering targets and a baffle plate; the sample stage is arranged in the middle of the sputtering targets and is separated from the sputtering targets by a certain distance; the baffle is movably arranged among the sputtering targets and is positioned right below the sample table.
2. The apparatus for preparing high flux film according to claim 1, wherein the baffle is drivingly connected to a linear driving mechanism.
3. The apparatus for preparing high flux thin film according to claim 2, wherein the linear driving mechanism is a pneumatic cylinder or a hydraulic cylinder or a linear motor.
4. The apparatus for manufacturing a high throughput thin film according to claim 1, wherein said blocking plate covers said sample stage when being close to said sample stage, and said blocking plate does not cover said sample stage at all when being close to said plurality of sputtering targets.
5. The device for preparing the high-flux thin film according to claim 1, wherein the baffle is a solid baffle or a baffle with a hollow structure.
6. The apparatus for manufacturing a high throughput thin film according to claim 1, further comprising a control system for controlling sputtering powers of said plurality of sputtering targets and positions of said shutter plates.
7. The method for manufacturing a device for manufacturing a high throughput thin film according to any one of claims 1 to 6, comprising the steps of:
s1: arranging a target material with required material components on each sputtering target, and adjusting the height and the angle of each sputtering target;
s2: vacuumizing the interior of the device, injecting sputtering gas, and adjusting the air pressure and temperature in the device and the sputtering power of a sputtering target;
s3: turning on a sputtering power switch to start sputtering and coating;
s4: in the sputtering process, the relative distance between the baffle and the sample platform is changed by adjusting the position of the baffle, so that one sputtering target or a plurality of sputtering targets is partially or completely shielded, the sputtering power of the sputtering targets is changed, and coating films with different components are sputtered from the edge to the middle part on the sample platform;
s5: and after the coating is finished, closing the sputtering power switch, and taking out the sample table to obtain a coating sample with various different components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110135381.4A CN112962067A (en) | 2021-02-01 | 2021-02-01 | Preparation device and method of high-flux film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110135381.4A CN112962067A (en) | 2021-02-01 | 2021-02-01 | Preparation device and method of high-flux film |
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| Publication Number | Publication Date |
|---|---|
| CN112962067A true CN112962067A (en) | 2021-06-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110135381.4A Pending CN112962067A (en) | 2021-02-01 | 2021-02-01 | Preparation device and method of high-flux film |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109355621A (en) * | 2018-12-21 | 2019-02-19 | 张晓军 | It is a kind of to match controllable large area high throughput laminated film synthesizer and method |
| WO2019047167A1 (en) * | 2017-09-08 | 2019-03-14 | 深圳市矩阵多元科技有限公司 | High-throughput magnetron sputtering system used for preparing composite material |
| CN110306160A (en) * | 2019-08-09 | 2019-10-08 | 中国科学院上海微系统与信息技术研究所 | High flux film depositing device and membrane deposition method |
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2021
- 2021-02-01 CN CN202110135381.4A patent/CN112962067A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019047167A1 (en) * | 2017-09-08 | 2019-03-14 | 深圳市矩阵多元科技有限公司 | High-throughput magnetron sputtering system used for preparing composite material |
| CN109355621A (en) * | 2018-12-21 | 2019-02-19 | 张晓军 | It is a kind of to match controllable large area high throughput laminated film synthesizer and method |
| CN110306160A (en) * | 2019-08-09 | 2019-10-08 | 中国科学院上海微系统与信息技术研究所 | High flux film depositing device and membrane deposition method |
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Application publication date: 20210615 |