CN110396671A - A kind of device and method that high throughput prepares the uniform thin-film material of multicomponent - Google Patents
A kind of device and method that high throughput prepares the uniform thin-film material of multicomponent Download PDFInfo
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- CN110396671A CN110396671A CN201910722742.8A CN201910722742A CN110396671A CN 110396671 A CN110396671 A CN 110396671A CN 201910722742 A CN201910722742 A CN 201910722742A CN 110396671 A CN110396671 A CN 110396671A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides the device and method that a kind of high throughput prepares the uniform thin-film material of multicomponent, are related to technical field of film preparation, and the uniform film sample of a variety of different materials ingredients can be prepared by once testing, greatly improves preparation efficiency；The device includes reaction chamber, and deposition table plate, drive system and sputtering target are equipped in the reaction chamber, and the sputtering target hangs the top for being located at the reaction chamber；The deposition table plate is equipped with several rotating and depositing microcell units, and the rotating and depositing microcell unit passes through the deposition table plate, and the rotatable connection between the deposition table plate；The rotating and depositing microcell unit is connect with the drive system, realizes synchronous rotary under the power drive of the drive system.During technical solution provided by the invention prepares film suitable for sputtering.
Description
[technical field]
The present invention relates to technical field of film preparation more particularly to a kind of high throughput to prepare the uniform thin-film material of multicomponent
Device and method.
[background technique]
The research and development of new material are a complicated processes, it is generally the case that developer can only once prepare a kind of ingredient list
One material, and its correlated performance is tested.This traditional material research method characterized by trial and error is not only time-consuming to take
Power seriously constrains the research and development speed of material, and needs higher R & D Cost.
In consideration of it, more efficient experimental method must be explored.The it is proposed of high-throughput experimental method, can be complete in a short time
At the preparation and representation of a large amount of samples, to greatly improve the research and development speed of new material.In general, combined material in high-throughput experiment
The preparation method of film sample, which mainly has, is co-deposited membrane process, discrete template coating method, sequential templet coating method.It is thin with regard to being co-deposited
For embrane method, although the film of a large amount of heterogeneities can be prepared by once testing by magnetron sputtering codeposition technique
Material, but for the thin-film material of a certain special component, its ingredient and uneven in corresponding region.In addition, prepared
Sample must be characterized by the iron-enriched yeast mode of microcell, be not particularly suited for the characteristic manner of traditional relative maturity,
Applicability is poor.
In view of the above-mentioned problems, it is necessary to study the device and method that a kind of high throughput prepares the uniform thin-film material of multicomponent to come
The deficiencies in the prior art are coped with, to solve the problems, such as or mitigate said one or multiple.
[summary of the invention]
In view of this, the present invention provides the device and method that a kind of high throughput prepares the uniform thin-film material of multicomponent, energy
Enough uniform film samples that a variety of different materials ingredients are prepared by once experiment, greatly improve preparation efficiency.
On the one hand, the present invention provides the device that a kind of high throughput prepares the uniform thin-film material of multicomponent, which is characterized in that institute
Stating device includes reaction chamber, and deposition table plate, drive system and sputtering target are equipped in the reaction chamber, and the sputtering target is hung
It is located at the top of the reaction chamber；
The deposition table plate is equipped with several rotating and depositing microcell units, and the rotating and depositing microcell unit bottom passes through
The deposition table plate, and the rotatable connection between the deposition table plate；
The rotating and depositing microcell unit is connect with the drive system, is realized under the power drive of the drive system
Synchronous rotary.
The aspect and any possible implementation manners as described above, it is further provided a kind of implementation, described in each
The equal fixing sleeve in bottom end of rotating and depositing microcell unit is equipped with the first transmission gear, between two adjacent the first transmission gears mutually
Engagement；The bottom end of one of them rotating and depositing microcell unit is additionally provided with extending shaft, and fixing sleeve is equipped with the on the extending shaft
Two transmission gears, second transmission gear are connect with the drive system.
The aspect and any possible implementation manners as described above, it is further provided a kind of implementation, the rotation are heavy
Product microcell unit includes sample stage, thick shaft and thin shaft；The sample stage is horizontally disposed, the lower surface of the sample stage and institute
The top for stating thick shaft is fixedly connected, and the bottom end of the thick shaft is fixedly connected with the top of the thin shaft；The thin shaft
Across the deposition table plate, and with the rotatable connection of deposition table plate.
The aspect and any possible implementation manners as described above, it is further provided a kind of implementation, it is described rotatable
Connection be bearing connection, specifically: several bearings corresponding with the thin shaft are set in the deposition table plate, it is described
Thin shaft is passed through from the interstitial hole of the bearing realizes bearing connection.
The aspect and any possible implementation manners as described above, it is further provided a kind of implementation, the driving system
System includes driving motor and driving gear, and the driving gear fixing sleeve is located on the motor shaft of the driving motor；The drive
Moving gear engages connection with second transmission gear.
The aspect and any possible implementation manners as described above, it is further provided a kind of implementation, the driving electricity
Mutually insulated between machine and the inner wall of the reaction chamber.
The aspect and any possible implementation manners as described above, it is further provided a kind of implementation, the deposition table
The lower section of plate is equipped with several support rods for being used to support the deposition table plate.
The aspect and any possible implementation manners as described above, it is further provided a kind of implementation, described first passes
Moving gear, second transmission gear and the driving gear have downward boss, push up in the boss equipped with fixed
Silk.
On the other hand, the uniform film material of multicomponent is prepared using as above any high throughput the present invention also provides a kind of
The method that the device of material prepares thin-film material, which is characterized in that step includes:
S1, the target of material requested ingredient is placed in sputtering target, and adjusts the angle and height of sputtering target；
S2: matrix is placed and secured on the sample stage of each rotating and depositing microcell unit；
S3: driving motor is opened, each rotating and depositing microcell unit synchronous rotary is made；
S4: sputtering switch is opened, sputter coating is started；
S5: pass hull closure after the completion of plated film takes out sample, obtains multiple uniform film samples with different materials ingredient
Product.
The aspect and any possible implementation manners as described above, it is further provided a kind of implementation, before starting sputtering,
The indoor vacuum degree of reaction chamber, air pressure, temperature and sputtering power are adjusted according to the concrete condition of plated film.
Compared with prior art, the present invention can be obtained including following technical effect: can simultaneously be deposited multiple material
On the independently rotary sample stage of each microcell, so that the film of a variety of different materials ingredients can be prepared by once experiment
Sample, and can guarantee that each sample surfaces are the uniform film of ingredient；High-throughput thought and method are applied to more by the present invention
In the preparation of the uniform film of composition component, preparation efficiency is substantially increased, accelerates the exploitation and screening of new material.
Certainly, it implements any of the products of the present invention it is not absolutely required to while reaching all the above technical effect.
[Detailed description of the invention]
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this field
For those of ordinary skill, without creative efforts, it can also be obtained according to these attached drawings other attached drawings.
Fig. 1 is that the structure for the device that high throughput provided by one embodiment of the present invention prepares the uniform thin-film material of multicomponent is shown
It is intended to；
Fig. 2 is the structural schematic diagram of sample stage and shaft in microcell unit provided by one embodiment of the present invention；
Fig. 3 is the structural schematic diagram of transmission gear provided by one embodiment of the present invention and driving gear；
Fig. 4 is the distribution map of deposition microcell provided by one embodiment of the present invention；
Fig. 5 is the distribution map for the deposition microcell that another embodiment of the present invention provides.
Wherein, in figure:
1- sample stage；The thick shaft of 2-；The thin shaft of 3-；4- bearing；5- deposition table plate；The first transmission gear of 6-；7- boss；
8- extending shaft；The second transmission gear of 9-；10- drives gear；11- driving motor；12- support rod；13- insulating component；14- first
Sputtering target；The second sputtering target of 15-；16- fixes jackscrew.
[specific embodiment]
For a better understanding of the technical solution of the present invention, being retouched in detail to the embodiment of the present invention with reference to the accompanying drawing
It states.
It will be appreciated that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
Its embodiment, shall fall within the protection scope of the present invention.
The term used in embodiments of the present invention is only to be not intended to be limiting merely for for the purpose of describing particular embodiments
The present invention.In the embodiment of the present invention and " one kind " of singular used in the attached claims, " described " and " being somebody's turn to do "
It is also intended to including most forms, unless the context clearly indicates other meaning.
A kind of high throughput prepares the device of the uniform thin-film material of multicomponent, as shown in Figure 1, including reaction chamber, reaction chamber
Interior is equipped with deposition table, drive system and sputtering target, and sputtering target hangs the top for being located at reaction chamber；Wherein, deposition table includes heavy
Product platform plate 5, deposition table plate 5 are equipped with several independent rotating and depositing microcell units, and each rotating and depositing microcell unit
It can individually dismount.It is connected between the thin shaft of microcell unit and deposition table plate using bearing, specifically: deposition table plate 5 is equipped with
Several via holes, via hole is interior to be equipped with bearing 4, and rotating and depositing microcell unit passes through via hole and connect with 4 bearing of bearing.Each rotation is heavy
The bottom of product microcell unit is equipped with the first transmission gear 6, and all first transmission gears 6 are arranged in same level height,
And two adjacent the first transmission gears 6 engage connection, thus other first transmission gears when guaranteeing to rotate one of them
Rotation achievees the purpose that power transmits.
As shown in Fig. 2, rotating and depositing microcell unit includes horizontally disposed sample stage 1, the lower surface of sample stage 1 turns with thick
The top of axis 2 is fixedly connected, and the bottom end of thick shaft 2 is fixedly connected with the top of thin shaft 3.Thin shaft 3 passes through deposition table plate 5
With corresponding bearing 4, and it is connect with 4 bearing of bearing.The bottom of thin shaft 3 is arranged with the first transmission gear 6.Deposition table surface is micro-
The sample stage 1 of area's unit is round, rectangle or other arbitrary shapes, and thick, thin shaft is circle.In microcell unit shaft
It is thick lower thin, it is placed in bearing groove, does not need to take other fixed forms, guarantee the same of smooth rotation between thin shaft and bearing
When it is easy to disassemble.The thin shaft of a certain microcell unit is longer than the thin shaft (being equipped with extending shaft 8) of other microcell units, and at it
On be arranged with the first transmission gear and the second transmission gear, to transmit the power from driving motor.First transmission gear and
Two transmission gears are to be fixedly connected when connecting with thin shaft or extending shaft 8.
Drive system includes driving motor 11 and driving gear 10, and driving gear 10 is set in the shaft of driving motor 11
On, driving motor supplies power, and by gear drive, it is provided for all synchronous rotaries for depositing microcell units in deposition table surface dynamic
Power and power transmission.The thin shaft 3 of the rotating and depositing microcell unit of one of them is equipped with extending shaft, is arranged with second on extending shaft
Transmission gear 9 is fixedly connected between second transmission gear 9 and extending shaft.Second transmission gear 9 with driving 10 company of engagement of gear
It connects.When driving motor 11 works, drive driving gear 10 is rotated, and driving gear 10 drives the second transmission gear 9 to rotate, and second
Transmission gear 9 drives extending shaft and the rotating and depositing microcell unit rotational, while in the rotating and depositing microcell unit rotational
First transmission gear 6 follows the rotation of thin shaft 3 and rotates, and then drives the rotation of other the first transmission gears 6, realizes all
The synchronous rotation of rotating and depositing microcell unit.Mutually insulated between driving motor and reaction chamber wall, to meet practical coating process
In demand to other technological parameters.
All transmission gears and driving gear have downward boss, as shown in figure 3, and equipped with fixation in boss
Jackscrew 16, thus can be easy to disassemble while fixed with shaft.
The four corners of deposition table plate 5 are respectively arranged with a support rod 12, the height and shaft, tooth of four support rods 12
Other components such as wheel match, and while providing support for deposition table plate, it is empty that certain placement can be provided for drive system
Between.Support rod can be divide into upper part and lower part, and centre is obstructed by insulating component 13, and insulating component 13 is the insulation materials such as insulating ceramics
Material；Or support rod is integrally made by insulating materials, to realize the electric isolation between deposition table and chamber.
The regulating device of vacuum degree, air pressure and temperature continues traditional structure and working principle for preparing film apparatus, this
In no longer repeat one by one.
Above-mentioned apparatus high throughput prepares the application method of the uniform thin-film material of multicomponent, specifically includes the following steps:
Step 1: after the target of required certain material ingredient is placed in sputtering target, regulate sputtering sedimentation target angle and
Highly；
Step 2: matrix being placed and secured on the sample stage of each microcell unit；
Step 3: regulating other plated films such as vacuum degree, air pressure, temperature, power (i.e. the power in sputtering target deposition power source)
After required parameter, before formal plated film, driving motor is opened, to make each microcell unit synchronous rotary after gear drive；
Step 4: opening sputtering switch and start sputter coating, while multiple material being deposited in deposition table；
Step 5: pass hull closure after the completion of plated film takes out sample, can be obtained multiple uniform with different materials ingredient
Film sample.
Embodiment 1
As shown in connection with fig. 1, to prepare Cu (100-x) Crx (x=3.2,4.5,5.7,6.5,7.9,9.2,10,6at.%)
For the chromiumcopper film of totally 7 kinds of different-alloy ingredients, by high purity copper (99.9995%) target and High Pure Chromium (99.95%)
Target is individually positioned on two target position, adjusts two target angles, makes it with horizontal direction in 45 °.Wherein, copper target position is direct current function
Rate source, chromium target position are radio frequency power source.7 silicon wafers that size is 10mm × 10mm are placed in acetone soln and are cleaned by ultrasonic
After 20min, it is individually positioned on 7 microcell sample stages of two target parallel directions.Adjust magnetron sputtering technique parameter, technological parameter
It is respectively as follows: Cu target power output 100W, Cr target power output 100W, sputtering time 30min, air pressure 0.5Pa, 8 × 10-4Pa of vacuum degree.It opens
Driving motor makes each microcell unit synchronous rotary, opens target power source and carries out sputter coating.After the completion of plated film, sample is taken out simultaneously
Pass through the content and distribution of copper and chromium in 7 film samples of EDS energy spectrometer analysis.As shown in figure 4, each deposition is micro-
The different gray scale in area represents different alloy element components.Wherein, closer to the sample gray scale of copper target, bigger (i.e. color is got over
It is deep), copper content is also higher.Correspondingly, the sample gray scale closer to chromium target is smaller (i.e. color is more shallow), chromium content is also higher.This
Outside, it is analyzed by homogeneity of ingredients of the EDS energy disperse spectroscopy to simple sample, the results showed that, in the range of 10mm × 10mm
Interior, sample composition uniformity is respectively less than 1%.
Embodiment 2
As shown in connection with fig. 1, to prepare Cu (100-x-y) CrxTiy (3≤x≤10,2≤y≤8at.%) totally 45 kinds of differences
For the copper chromium titanium alloy thin films of alloying component, by high purity copper (99.9995%) target, High Pure Chromium (99.95%) target and height
Pure titanium (99.995%) target is individually positioned on three target position, adjusts the angle of three targets, makes it with horizontal direction in 45 °.
Wherein, copper target position and titanium target position are direct current power source, and chromium target position is radio frequency power source, the distribution triangular in shape of three targets, between each other
Angle is 120 °.45 silicon wafers that size is 10mm × 10mm are placed in after being cleaned by ultrasonic 20min in acetone soln, respectively
It is placed on 45 microcell sample stages.Magnetron sputtering technique parameter is adjusted, technological parameter is respectively as follows: Cu target power output 100W, Cr target
Power 100W, Ti target power output 100W, sputtering time 30min, air pressure 0.5Pa, 8 × 10-4Pa of vacuum degree.Driving motor is opened, is made
Each microcell unit synchronous rotary opens target power source and carries out sputter coating.After the completion of plated film, takes out sample and pass through EDS power spectrum
Instrument analyzes the content and distribution of copper and chromium in 45 film samples.As shown in figure 5, the ash that each deposition microcell is different
Degree represents different alloy element components.Wherein, bigger (i.e. color is deeper) closer to the sample gray scale of copper target, copper content
It is higher.Correspondingly, the sample gray scale closer to chromium target or titanium target is smaller (i.e. color is more shallow), chromium and Ti content are also corresponding higher.
In addition, being analyzed by homogeneity of ingredients of the EDS energy disperse spectroscopy to simple sample.The result shows that in the model of 10mm × 10mm
In enclosing, sample composition uniformity is respectively less than 1%.
Device and the side of the uniform thin-film material of multicomponent are prepared to a kind of high throughput provided by the embodiment of the present application above
Method is described in detail.The description of the example is only used to help understand the method for the present application and its core ideas；Together
When, for those of ordinary skill in the art, according to the thought of the application, have in specific embodiments and applications
Change place, in conclusion the contents of this specification should not be construed as limiting the present application.
Some vocabulary has such as been used to censure specific components in specification and claims.Those skilled in the art
, it is to be appreciated that hardware manufacturer may call the same component with different nouns.Present specification and claims are not
In such a way that the difference of title is as component is distinguished, but with the difference of component functionally as the criterion of differentiation.Such as
It is an open language, therefore should be construed to " packet in " including ", " the including " of specification and claims in the whole text mentioned in
Containing/including but not limited to "." substantially " refers within the acceptable error range, and those skilled in the art can centainly miss
The technical problem is solved in poor range, basically reaches the technical effect.Specification subsequent descriptions be implement the application compared with
Good embodiment, so the description is being not intended to limit the scope of the present application for the purpose of the rule for illustrating the application.
The protection scope of the application is subject to view the appended claims institute defender.
It should also be noted that, term " including ", " including " or its any other variant are intended to nonexcludability
Include, so that commodity or system including a series of elements not only include those elements, but also including not clear
The other element listed, or further include for this commodity or the intrinsic element of system.In the feelings not limited more
Under condition, the element that is limited by sentence " include one ... ", it is not excluded that including the element commodity or system in
There is also other identical elements.
It should be appreciated that term used herein " and/or " it is only a kind of incidence relation for describing affiliated partner, it indicates
There may be three kinds of relationships, for example, A and/or B, can indicate: individualism A, exist simultaneously A and B, individualism B these three
Situation.In addition, character "/" herein, typically represent forward-backward correlation object be it is a kind of " or " relationship.
Above description shows and describes several preferred embodiments of the present application, but as previously described, it should be understood that the application
Be not limited to forms disclosed herein, should not be regarded as an exclusion of other examples, and can be used for various other combinations,
Modification and environment, and the above teachings or related fields of technology or knowledge can be passed through in application contemplated scope described herein
It is modified.And changes and modifications made by those skilled in the art do not depart from spirit and scope, then it all should be in this Shen
It please be in the protection scope of the appended claims.
Claims (10)
1. the device that a kind of high throughput prepares the uniform thin-film material of multicomponent, which is characterized in that described device includes reaction chamber,
Deposition table plate, drive system and sputtering target are equipped in the reaction chamber, the sputtering target, which is hung, is located at the reaction chamber
Top；
The deposition table plate is equipped with several rotating and depositing microcell units, and the rotating and depositing microcell unit bottom passes through described
Deposition table plate, and the rotatable connection between the deposition table plate；
The rotating and depositing microcell unit is connect with the drive system, is realized and is synchronized under the power drive of the drive system
Rotation.
2. the device that high throughput according to claim 1 prepares the uniform thin-film material of multicomponent, which is characterized in that each
The equal fixing sleeve in bottom end of the rotating and depositing microcell unit is equipped with the first transmission gear, between two adjacent the first transmission gears
Intermeshing；The bottom end of one of them rotating and depositing microcell unit is additionally provided with extending shaft, and fixation is arranged on the extending shaft
There is the second transmission gear, second transmission gear is connect with the drive system.
3. the device that high throughput according to claim 1 prepares the uniform thin-film material of multicomponent, which is characterized in that the rotation
Turning deposition microcell unit includes sample stage, thick shaft and thin shaft；The sample stage is horizontally disposed, the lower surface of the sample stage
It is fixedly connected with the top of the thick shaft, the bottom end of the thick shaft is fixedly connected with the top of the thin shaft；It is described thin
Shaft pass through the deposition table plate, and with the rotatable connection of deposition table plate.
4. the device that high throughput according to claim 3 prepares the uniform thin-film material of multicomponent, which is characterized in that it is described can
The connection of rotation is bearing connection, specifically: several bearings corresponding with the thin shaft are set in the deposition table plate,
The thin shaft is passed through from the interstitial hole of the bearing realizes bearing connection.
5. the device that high throughput according to claim 2 prepares the uniform thin-film material of multicomponent, which is characterized in that the drive
Dynamic system includes driving motor and driving gear, and the driving gear fixing sleeve is located on the motor shaft of the driving motor；Institute
It states driving gear and engages connection with second transmission gear.
6. the device that high throughput according to claim 5 prepares the uniform thin-film material of multicomponent, which is characterized in that the drive
Mutually insulated between dynamic motor and the inner wall of the reaction chamber.
7. the device that high throughput according to claim 1 prepares the uniform thin-film material of multicomponent, which is characterized in that described heavy
The lower section of product platform plate is equipped with several support rods for being used to support the deposition table plate.
8. the device that high throughput according to claim 5 prepares the uniform thin-film material of multicomponent, which is characterized in that described
One transmission gear, second transmission gear and the driving gear have a downward boss, equipped with solid in the boss
Determine jackscrew.
9. preparing thin-film material using the device that any high throughput of claim 1-8 prepares the uniform thin-film material of multicomponent
Method, which is characterized in that step includes:
S1, the target of material requested ingredient is placed in sputtering target, and adjusts the angle and height of sputtering target；
S2: matrix is placed and secured on the sample stage of each rotating and depositing microcell unit；
S3: driving motor is opened, each rotating and depositing microcell unit synchronous rotary is made；
S4: sputtering switch is opened, sputter coating is started；
S5: pass hull closure after the completion of plated film takes out sample, obtains multiple uniform film samples with different materials ingredient.
10. the device that high throughput according to claim 9 prepares the uniform thin-film material of multicomponent, which is characterized in that start
Before sputtering, the indoor vacuum degree of reaction chamber, air pressure, temperature and sputtering power are adjusted according to the concrete condition of plated film.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910722742.8A CN110396671B (en) | 2019-08-06 | 2019-08-06 | Device and method for preparing multi-component uniform thin film material in high flux |
| DE112020001782.6T DE112020001782T5 (en) | 2019-08-06 | 2020-07-08 | DEVICE AND METHOD FOR MANUFACTURING A HOMOGENOUS MULTI-COMPONENT FILM MATERIAL WITH HIGH THROUGHPUT |
| PCT/CN2020/100901 WO2021022965A1 (en) | 2019-08-06 | 2020-07-08 | Apparatus and method for high-throughput preparation of multi-component uniform film material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910722742.8A CN110396671B (en) | 2019-08-06 | 2019-08-06 | Device and method for preparing multi-component uniform thin film material in high flux |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110396671A true CN110396671A (en) | 2019-11-01 |
| CN110396671B CN110396671B (en) | 2020-10-09 |
Family
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| CN201910722742.8A Active CN110396671B (en) | 2019-08-06 | 2019-08-06 | Device and method for preparing multi-component uniform thin film material in high flux |
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| CN (1) | CN110396671B (en) |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021022965A1 (en) * | 2019-08-06 | 2021-02-11 | 北京科技大学 | Apparatus and method for high-throughput preparation of multi-component uniform film material |
| CN113337798A (en) * | 2021-04-13 | 2021-09-03 | 电子科技大学 | Film preparation method, high-flux combined material chip preparation method and system |
| CN114166590A (en) * | 2021-11-15 | 2022-03-11 | 哈尔滨工业大学（威海） | Magnetron sputtering equipment for mechanical property test of mesoscopic scale sample |
| CN115537744A (en) * | 2022-09-21 | 2022-12-30 | 华南理工大学 | Method for preparing SmCo alloy permanent magnetic film by single-substance target high flux |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114481060A (en) * | 2021-12-23 | 2022-05-13 | 凯盛信息显示材料(洛阳)有限公司 | ITO conductive film glass plate sputtering cavity structure |
| CN118086851B (en) * | 2024-04-23 | 2024-07-09 | 西安交通大学 | Method for improving uniformity of rare earth nickelate film deposited by reactive magnetron sputtering |
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| CN108396311A (en) * | 2018-05-18 | 2018-08-14 | 宁波英飞迈材料科技有限公司 | High-throughput PECVD device and method |
| CN208008884U (en) * | 2018-03-27 | 2018-10-26 | 合肥科晶材料技术有限公司 | A kind of five target magnetic control sputtering plated film instrument for high-throughput coating process |
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| US20060249372A1 (en) * | 2005-04-11 | 2006-11-09 | Intematix Corporation | Biased target ion bean deposition (BTIBD) for the production of combinatorial materials libraries |
| CN203065570U (en) * | 2013-03-04 | 2013-07-17 | 电子科技大学 | Inline multi-target magnetron sputtering coating device |
| CN109207952B (en) * | 2018-10-25 | 2020-01-10 | 北京航空航天大学 | Method for preparing gradient Nb-Si-based alloy film by adopting high-throughput technology |
| CN109943813B (en) * | 2019-04-28 | 2023-03-14 | 北京航空航天大学 | High-flux preparation method of Al-Cr metal composite coating |
| CN110396671B (en) * | 2019-08-06 | 2020-10-09 | 北京科技大学 | Device and method for preparing multi-component uniform thin film material in high flux |
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- 2019-08-06 CN CN201910722742.8A patent/CN110396671B/en active Active
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- 2020-07-08 DE DE112020001782.6T patent/DE112020001782T5/en active Pending
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| CN108330456A (en) * | 2018-01-31 | 2018-07-27 | 北京大学深圳研究生院 | It is a kind of high throughput material preparation device and its application |
| CN208008884U (en) * | 2018-03-27 | 2018-10-26 | 合肥科晶材料技术有限公司 | A kind of five target magnetic control sputtering plated film instrument for high-throughput coating process |
| CN108396311A (en) * | 2018-05-18 | 2018-08-14 | 宁波英飞迈材料科技有限公司 | High-throughput PECVD device and method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021022965A1 (en) * | 2019-08-06 | 2021-02-11 | 北京科技大学 | Apparatus and method for high-throughput preparation of multi-component uniform film material |
| CN113337798A (en) * | 2021-04-13 | 2021-09-03 | 电子科技大学 | Film preparation method, high-flux combined material chip preparation method and system |
| CN114166590A (en) * | 2021-11-15 | 2022-03-11 | 哈尔滨工业大学（威海） | Magnetron sputtering equipment for mechanical property test of mesoscopic scale sample |
| CN114166590B (en) * | 2021-11-15 | 2022-07-15 | 哈尔滨工业大学（威海） | Magnetron sputtering equipment for mechanical property test of mesoscopic scale sample |
| CN115537744A (en) * | 2022-09-21 | 2022-12-30 | 华南理工大学 | Method for preparing SmCo alloy permanent magnetic film by single-substance target high flux |
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| Publication number | Publication date |
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| WO2021022965A1 (en) | 2021-02-11 |
| DE112020001782T5 (en) | 2021-12-30 |
| CN110396671B (en) | 2020-10-09 |
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