CN110391186A - 阵列基板及其制备方法 - Google Patents
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Abstract
本发明提供了一种阵列基板及其制备方法,所述阵列基板的制备方法将有源层的导体化处理提前至剥离光刻胶前执行,并且本发明中的制备方法将现有技术中的氧气替换为氦气,提高了生产效率,减低了生产成本,且良品率高。
Description
技术领域
本发明涉及显示器件领域,特别是一种阵列基板及其制备方法。
背景技术
AMOLED(Active-Matrix Organic Light-Emitting Diode,有源矩阵有机发光二极体)具有自发光、色彩鲜艳、对比度高、响应速度快、功耗低等优点,有望取代薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display,TFT-LCD)成为下一代显示技术的主流。AMOLED对于TFT(Thin Film Transistor,薄膜晶体管)的要求较高,非晶硅(a-Si)TFT和低温多晶硅(Low Temperature Poly-Silicon,LTPS)TFT这两种传统技术并不适合于大尺寸AMOLED显示:LTPS TFT虽然迁移率较高、电学稳定性较好,但是其电学特性的大面积均匀性较差。另一方面,a-Si TFT虽然具有较好的大面积均匀性,但是其迁移率过低,且存在严重的特性漂移。以上这些缺点限制了硅(Si)基TFT在大尺寸AMOLED像素电路中的应用。
IGZO TFT是近年来新出现的TFT技术,它兼具迁移率高、均匀性好、制备成本低廉等优点,有可能促进AMOLED实现量产,尤其是其大面积均一性较好,成为一种有竞争力的显示装置器件。
在目前Top-Gate IGZO的TFT器件制造过程中,传统流程方法需要两次进出干燥室来完成栅极层与有源层之间的绝缘层的蚀刻以及有源层的导体化制程。并且,在蚀刻绝缘层时使用的气体为四氟化碳和氧气,氧气参与的反应会有污染物产生,从而在电路上产生光学显微镜下显示为小黑点的缺陷。另一方面,氧气的存在也会导致光刻胶的变性,从而导致其在后续的制备工序后,电极线上存在光刻胶残留。因此,采用现有的制备工艺模式,对产能产生了消极影响。
发明内容
本发明的目的是提供一种阵列基板及其制备方法,以解决现有技术中制备过程繁琐以及蚀刻气体中的氧气会在电路上产生光学显微镜下显示为小黑点的缺陷,并且氧气还会促使光刻胶变性,从而导致其在后续的制备工序后,电极线上存在光刻胶残留等问题。
为实现上述目的,本发明提供一种阵列基板的制备方法,所述阵列基板的制备方法中包括以下步骤:
提供一基底;
在所述基底上依次沉积有源层、栅极绝缘层、栅极层;
在所述栅极层上涂覆光刻胶,并湿法刻蚀所述栅极层;
干法刻蚀所述栅极绝缘层;
导体化所述有源层;以及
剥离所述光刻胶。
进一步地,在所述干法刻蚀所述栅极绝缘层步骤中包括:在反应室内充入蚀刻气体,对所述绝缘层进行蚀刻,形成所述栅极绝缘层。其中,所述蚀刻气体为四氟化碳和氦气。
进一步地,在反应室内充入蚀刻气体步骤中,同时充入所述四氟化碳和所述氦气,其中所述四氟化碳和所述氦气的流量比为2-6:1。
进一步地,在导体化所述有源层步骤中包括:在反应室内停止充入四氟化碳并增大氦气的流量,提升等离子轰击的力量,将所述有源层导体化。其中,所述氦气流量增大的倍数为1-15倍。
进一步地,在剥离所述光刻胶步骤中包括:在反应室内充入氧气,对所述光刻胶层进行灰化处理,去除部分所述光刻胶层。并采用湿法剥离将剩余光刻胶层去除。
进一步地,在提供一基底步骤中包括:提供一衬底层,在所述衬底层上形成遮光层,在所述衬底层和所述遮光层上形成缓冲层。
进一步地,在所栅极层上涂覆光刻胶,并湿法刻蚀所述栅极层步骤中包括:在所述栅极层远离所述栅极绝缘层的一表面上涂布光刻胶,将所述光刻胶通过曝光、显影后进行湿法蚀刻,并蚀刻至所述栅极层,将所述栅极图案化。
本发明中还提供一种阵列基板,其采用如上所述的阵列基板的制备方法所制备。
进一步地,所述阵列基板包括基底、有源层、栅极绝缘那层以及栅极层。所述有源层设于所述基底上。所述栅极绝缘层设于所述有源层上。所述栅极层设于所述栅极绝缘层远离所述有源层的一表面上,并与所述有源层相互对应。
进一步地,所述基底包括衬底层、遮光层以及缓冲层。所述遮光层设于所述衬底层靠近所述有源层的一表面上,并与所述有源层相互对应。所述缓冲层覆于所述衬底层和所述遮光层上,并且所述有源层设于所述缓冲层远离所述遮光层的一表面上。
本发明的优点是:本发明的一种阵列基板及其制备方法,其制备方法中将有源层的导体化处理提前至剥离光刻胶前执行,相对于现有的制备方法中,在剥离光刻胶后再将有源层导体化处理的顺序,本发明的制备方法可以减少一次进入气体反应室的步骤,并且本发明中的制备方法将现有技术中的氧气替换为氦气,可以消除光刻胶残留的问题,杜绝氧气在电路上产生缺陷,提高了产品的优良率。本发明中的制备发明还可以改善栅极层的坡度角,缩短阵列基板的沟道长度,从而减少短沟道效应。
附图说明
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明实施例中阵列基板的制备方法的流程示意图;
图2为本发明实施例中步骤S10的具体流程示意图;
图3为本发明实施例中步骤S10后的阵列基板的层状示意图;
图4为本发明实施例中步骤S20后的阵列基板的层状示意图;
图5为本发明实施例中步骤S30后的阵列基板的层状示意图;
图6为本发明实施例中步骤S40后的阵列基板的层状示意图;
图7为本发明实施例中步骤S50后的阵列基板的层状示意图;
图8为本发明实施例中阵列基板的层状示意图。
图中部件表示如下:
阵列基板100;
基底110; 衬底层111;
遮光层112; 缓冲层113;
有源层120; 栅极绝缘层130;
栅极层140; 光刻胶150。
具体实施方式
以下参考说明书附图介绍本发明的优选实施例,证明本发明可以实施,所述发明实施例可以向本领域中的技术人员完整介绍本发明,使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的发明实施例来得以体现,本发明的保护范围并非仅限于文中提到的实施例。
在附图中,结构相同的部件以相同数字标号表示,各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的,本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰,附图中有些地方适当夸大了部件的厚度。
此外,以下各发明实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定发明实施例。本发明中所提到的方向用语,例如,“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等,仅是参考附加图式的方向,因此,使用的方向用语是为了更好、更清楚地说明及理解本发明,而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。此外,术语“第一”、“第二”、“第三”等仅用于描述目的,而不能理解为指示或暗示相对重要性。
当某些部件被描述为“在”另一部件“上”时,所述部件可以直接置于所述另一部件上;也可以存在一中间部件,所述部件置于所述中间部件上,且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时,二者可以理解为直接“安装”或“连接”,或者一个部件通过一中间部件间接“安装至”、或“连接至”另一个部件。
本发明实施例中提供了一种阵列基板100的制备方法,其制备流程如图1所示,所述阵列基板100的制备方法包括一下步骤:
步骤S10)提供一基底110:
如图3所示,所述基底110包括一衬底层111、一遮光层112以及一缓冲层113,所述遮光层112设于所述衬底层111上,所述缓冲层113覆于所述遮光层112和所述衬底层111上。
步骤S20)在所述基底110上依次形成有源层120、栅极绝缘层130、栅极层140:
所述步骤S20后的阵列基板100的层状结构如图4所示。
在所述基底110上沉积一金属氧化物层,所述金属氧化物层的材料为铟镓锌氧化物(IGZO)。然后将所述金属氧化物图案化,形成所述有源层120,所述有源层120与所述遮光层112相互对应。
在所述基底110上形成一栅极绝缘层130,同时所述栅极绝缘层130覆盖在所述有源层120上,所述栅极绝缘层130的材料为绝缘材料,其可以为氧化硅、氮化硅、氮氧化硅等材料中的一种或多种组合。
在所述栅极绝缘层130上形成一栅极层140,所述栅极层140的材料为导电性能优良的金属,其可以为钼、铝、铜、银等中的任意一种金属或两种以上组合而成的合金。
步骤S30)在所述栅极层140上涂覆光刻胶150,并湿法刻蚀所述栅极层140:
所述步骤S30后的阵列基板100的层状结构如图5所示。
在所述栅极层140上涂布一层光刻胶150,并将所述光刻胶150通过曝光、显影等步骤将其固化并形成图案,通过蚀刻液将所述固化后并形成图案的光刻胶150进行蚀刻,同时蚀刻至所述栅极层140,将所述栅极层140图案化。
步骤S40)干法刻蚀所述栅极绝缘层130:
所述步骤S40后的阵列基板100的层状结构如图6所示。
将所述基底110移至密闭的反应室内,并往所述反应室内同时充入蚀刻气体四氟化碳和氦气,进行干法刻蚀,将所述栅极绝缘层130图案化。其中,所述四氟化碳的流量为2000sccm-6000sccm,所述氦气的流量为1000sccm,所述四氟化碳和所述氦气的流量比为2-6:1。
步骤S50)导体化所述有源层120:
所述步骤S50后的阵列基板100的层状结构如图7所示。
在所述反应室内,停止充入所述四氟化碳气体的充入,并提高所述氦气的流量,将所述氦气的流量从1000sccm提升至3000sccm,提升等离子体的轰击力量,将所述有源层120导体化,促使所述有源层120成为半导体。其中,在本发明实施例中,所述氦气的流量提升了3倍,但在本发明的其他实施例中,所述氦气的流量提升倍数范围为1-15倍,由于其余步骤与本发明实施例中的步骤相同,故在此不做过多赘述。
步骤S60)剥离所述光刻胶150:
所述步骤S60后的阵列基板100的层状结构如图8所示。
当所述有源层120导体化完成后,停止所述氦气的充入,并往所述反应室内充入氧气,通过所述氧气对所述光刻胶150进行灰化处理,去除部分的光刻胶150。然后将所述基底110移出所述反应室,并通过湿法剥离,利用剥离液将剩余的光刻胶150去除干净。
具体的,所述提供一基底110步骤中还包括步骤S11-S13,其制备流程如图2所示,其具体操作步骤为:
步骤S11)提供一衬底层111:
所述衬底层111可以玻璃衬底层、石英衬底层、柔性衬底层等不同材质的衬底层中的一种。在本发明实施例中,所述衬底层111为玻璃衬底层。
步骤S12)在所述衬底层111上形成遮光层112:
在所述衬底层111上沉积一层不透光材料,形成遮光层112,通过掩膜法在所述遮光层112上形成图案并蚀刻,从而将所述遮光层112图案化。
步骤S13)在所述衬底层111和所述遮光层112上形成缓冲层113:
通过化学沉积法等方法在所述衬底层111和所述遮光层112上沉积形成一缓冲层113。
本发明实施例中所提供的阵列基板100的制备方法,其通过将所述有源层120的导体化处理提前至剥离光刻胶150前执行,相对于现有的制备方法中,在剥离光刻胶150后再进行有源层120导体化的处理的顺序,本发明实施例中的制备方法可以减少一次再次进入气体反应室的步骤,并且本发明实施例中的制备方法将现有的制备方法中使用的蚀刻气体中的氧气替换为氦气,可以消除光刻胶150残留的问题,杜绝氧气在电路上产生黑点缺陷,提高产品的优良率。本发明中的制备发明还可以改善栅极层140的坡度角,缩短阵列基板100的沟道长度,从而减少短沟道效应。
本发明实施例中还提供一阵列基板100,所述阵列基板100通过本发明实施例中所提供的阵列基板100的制备方法所制备完成。如图8所示,所述阵列基板100包括一基底110、一有源层120、一栅极绝缘层130以及一栅极层140。
所述基底110包括一衬底层111、一遮光层112以及一缓冲层113。
所述衬底层111可以为玻璃衬底层、石英衬底层、柔性衬底层等不同材质的衬底层111中的一种。在本发明实施例中,所述衬底层111为玻璃衬底层。
所述遮光层112设于所述衬底层111上,其有不透光材料沉积而成。由于所述有源层120对光线十分敏感,光线会影响所述有源层120的运作,故设置所述遮光层112为所述有源层120遮光。
所述缓冲层113覆于所述遮光层112和所述衬底层111上,所述缓冲层113用于将所述遮光层112和所述有源层120绝缘,并保护所述阵列基板100的整体结构,并隔绝水氧,减少水氧对所述阵列基板100中各器件的腐蚀。
所述有源层120设于所述缓冲层113远离所述遮光层112的一面上,并与所述遮光层112相互对应。所述有源层120的材料为金属氧化物铟镓锌氧化物(IGZO)。
所述栅极绝缘层130设于所述有源层120远离所述缓冲层113的一表面上,其用于将所述有源层120和所述栅极层140绝缘,防止发生短路现象。所述栅极绝缘层130可以为氧化硅、氮化硅、氮氧化硅等绝缘材料。
所述栅极层140设于所述栅极绝缘层130远离所述有源层120的一表面上。当向所述栅极层140施以电压时,栅压在所述栅极绝缘层130中产生电场,电力线由栅电极指向所述有源层120的表面,并在表面处产生感应电荷。所述栅极层140的材料为导电性能优良的金属,其可以为钼、铝、铜、银等中的任一种金属或两种以上的组成的合金。
本发明所提供的阵列基板100通过上述的阵列基板100的制备方法制备而成,其制备流程简单,提高了生产效率,减低了生产成本,且良品率高。
虽然在本文中参照了特定的实施方式来描述本发明,但是应该理解的是,这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是,可以对示例性的实施例进行许多修改,并且可以设计出其他的布置,只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是,可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是,结合单独实施例所描述的特征可以使用在其他所述实施例中。
Claims (10)
1.一种阵列基板的制备方法,其特征在于,包括:
提供一基底;
在所述基底上依次沉积有源层、栅极绝缘层、栅极层;
在所述栅极层上涂覆光刻胶,并湿法刻蚀所述栅极层;
干法刻蚀所述栅极绝缘层;
导体化所述有源层;
剥离所述光刻胶。
2.如权利要求1所述的阵列基板的制备方法,其特征在于,
在干法刻蚀所述栅极绝缘层步骤中包括:
在反应室内充入蚀刻气体,对所述绝缘层进行蚀刻,形成所述栅极绝缘层;
其中,所述蚀刻气体为四氟化碳和氦气。
3.如权利要求2所述的阵列基板的制备方法,其特征在于,在反应室内充入蚀刻气体步骤中,同时充入所述四氟化碳和所述氦气,其中所述四氟化碳和氦气的流量比为2-6:1。
4.如权利要求2所述的阵列基板的制备方法,其特征在于,
在导体化所述有源层步骤中包括:
在反应室内停止充入四氟化碳并增大氦气的流量,提升等离子轰击的力量,将所述有源层导体化;
其中,所述氦气流量增大的倍数为1-15倍。
5.如权利要求1所述的阵列基板的制备方法,其特征在于,
在剥离所述光刻胶步骤中包括:
在反应室内充入氧气,对所述光刻胶层进行灰化处理,去除部分所述光刻胶层;
采用湿法剥离将剩余光刻胶层去除。
6.如权利要求1所述的阵列基板的制备方法,其特征在于,
在提供一基底步骤中包括:
提供一衬底层;
在所述衬底层上形成遮光层;
在所述衬底层和所述遮光层上形成缓冲层。
7.如权利要求1所述的阵列基板的制备方法,其特征在于,
在所述栅极层上涂覆光刻胶,并湿法刻蚀所述栅极层步骤中包括:
在所述栅极层远离所述栅极绝缘层的一表面上涂布光刻胶,将所述光刻胶通过曝光、显影后进行湿法蚀刻,并蚀刻至所述栅极层,将所述栅极图案化。
8.一种阵列基板,其特征在于,采用如权利要求1-7中任意一项所述的阵列基板的制备方法所制备。
9.如权利要求8所述的阵列基板,其特征在于,所述阵列基板包括:
一基底;
有源层,设于所述基底上;
栅极绝缘层,设于所述有源层上;
栅极层,设于所述栅极绝缘层远离所述有源层的一表面上,并与所述有源层相互对应。
10.如权利要求9所述的阵列基板,其特征在于,所述基底包括:
衬底层;
遮光层,设于所述衬底层靠近所述有源层的一表面上,并与所述有源层相互对应;
缓冲层,覆于所述衬底层和所述遮光层上,并且所述有源层设于所述缓冲层远离所述遮光层的一表面上。
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