CN110364449B - 栅氧掺氮退火温度的监控方法 - Google Patents

栅氧掺氮退火温度的监控方法 Download PDF

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CN110364449B
CN110364449B CN201910670110.1A CN201910670110A CN110364449B CN 110364449 B CN110364449 B CN 110364449B CN 201910670110 A CN201910670110 A CN 201910670110A CN 110364449 B CN110364449 B CN 110364449B
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李中华
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Shanghai Huali Integrated Circuit Manufacturing Co Ltd
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Abstract

本发明公开了一种栅氧掺氮退火温度的监控方法，包括步骤：步骤一、在测试硅片上形成零标记层图形。步骤二、形成氮掺杂的栅氧化层，包括：氧化层生长工艺，对氧化层进行掺氮工艺，进行栅氧掺氮退火工艺。步骤三、形成套刻层图形，套刻层图形和对应的零标记层图形相套准形成监控结构。步骤四、测量各监控结构的套刻层图形和对应的零标记层图形之间的套准值，根据所测量的套准值调整栅氧掺氮退火温度。本发明能监控栅氧掺氮退火温度在二维平面上对栅氧化层的影响，并进而能调节栅氧掺氮退火温度并提高产品良率。

Description

栅氧掺氮退火温度的监控方法
技术领域
本发明涉及一种半导体集成电路制造方法，特别是涉及一种栅氧掺氮退火温度的监控方法。
背景技术
MOSFET是半导体器件电路的基本器件，MOSFET的栅极结构中需要采用栅介质层，栅介质层通常采用由SiO2材料组成栅氧化层，栅氧化层通常是对硅衬底进行氧化形成。随着半导体集成电路制造技术的不断发生，器件的特征尺寸不断等比例缩小，对于MOSFET来说，栅氧化层的厚度也会不断减小，栅氧化层的厚度减少能增加栅极电容，从而有利于提升MOSFET的驱动电流，从而提升器件的性能。
但是当半导体技术的工艺节点到达90nm以下时，栅氧化层的厚度后减少到
Figure BDA0002141425780000011
以下，过薄的栅氧化层会带来栅漏电流增加的缺陷以及栅极结构中的多晶硅栅的杂质容易穿过栅氧化层进入到硅衬底中的缺陷，故栅氧化层的厚度的降低有下限。
为了保持栅极电容不变而又不降低栅介质层的厚度，通常会采用提高栅介质层的介电系数(K)。一种方法是采用和栅氧化层不同的材料即采用高介电常数(HK)材料作为栅介质层，如采用HK材料包括氮氧化铪硅(HfSiON)等。但是HK材料的形成工艺相对复杂，成本高，开发周期长。
为此，现有一种常用的方法是，在栅氧化层中进行掺氮，栅氧化层在掺氮后SiO2中的氧会部分被N替换从而变成SiON。由于掺氮后的栅氧化层的K值会增加，故能在不降低栅氧化层的厚度的条件下提高器件的性能，从而能防止栅氧化层的厚度降低而带来的栅漏电的增加以及多晶硅栅的杂质通过栅氧化层扩散到硅衬底中。
现有掺氮栅氧化层的形成方法通常采用如下步骤：
首先、采用原位水汽生成(In-Situ Steam Generation，ISSG)对硅衬底片即硅片进行氧化形成氧化层即SiO2层。ISSG工艺通常是在氧气中通入少量的氢气作为催化剂，氧气和氢气反应后会形成水汽以及自由基氧原子，自由基氧原子会和硅反应形成SiO2。
之后、采用去耦等离子氮化(Decoupled Plasma Nitridation，DPN)工艺对所述氧化层进行掺氮工艺，即采用氮气形成的等离子体向SiO2中掺杂。
之后、进行栅氧掺氮退火即后氮化退火(Post Nitridation Anneal，PNA)，PNA工艺能使DPN工艺中掺入的氮杂质稳定即使Si-N键稳定以及能修复栅氧化层中由于等离子作用而产生的损伤。
在上述三步工艺中，PNA的工艺条件最后会影响到栅氧化层中处于稳定状态的Si-N键分布，会对栅氧化层的性能有较大影响，故对PNA的工艺条件如退火温度调节很重要。但是对PNA的工艺条件的调节首先需要对PNA的工艺波动进行监控，之后才能根据监控结果进行工艺条件的调节。
现有方法中，业界对栅氧掺氮退火即PNA温度波动的监控是靠观察光片即测试硅片的Z方向上栅氧化层的厚度的变化来实现。也即在测试硅片中采用ISSG、DPN和PNA形成栅氧化层后，对栅氧化层进行厚度测量，然后根据栅氧化层的厚度的变化来对PNA温度波动进行监控，由于厚度是垂直于测试硅片的表面，故厚度为Z方向值。
但是，PNA温度波动也会在二维平面上对栅氧化层产生影响，现有技术中无法实现PNA温度波动在二维平面上对栅氧化层的影响。
发明内容
本发明所要解决的技术问题是提供一种栅氧掺氮退火温度的监控方法，能监控栅氧掺氮退火温度在二维平面上对栅氧化层的影响，并进而能调节栅氧掺氮退火温度并提高产品良率。
为解决上述技术问题，本发明提供的栅氧掺氮退火温度的监控方法包括如下步骤：
步骤一、在测试硅片上形成零标记层图形。
步骤二、在形成有所述零标记层图形的所述测试硅片表面上形成氮掺杂的栅氧化层，所述栅氧化层的形成工艺包括：氧化层生长工艺，对所述氧化层进行掺氮工艺，进行栅氧掺氮退火工艺。
步骤三、在所述栅氧化层表面上形成套刻层图形，所述套刻层图形和对应的所述零标记层图形相套准(OVL)形成监控结构，所述监控结构中所述套刻层图形和对应的所述零标记层图形之间的套准值为沿和所述测试硅片的表面平行的X方向值和Y方向值。
步骤四、测量所述测试硅片上各所述监控结构的所述套刻层图形和对应的所述零标记层图形之间的套准值，根据所测量的所述套准值调整所述栅氧掺氮退火温度。
进一步的改进是，步骤一中采用如下步骤形成所述零标记层图形：
步骤11、在所述测试硅片表面形成硬质掩模层。
步骤12、在所述硬质掩模层表面涂布零标记层光刻胶并对所述零标记层光刻胶进行曝光和显影。
步骤13、以显影后的所述零标记层光刻胶为掩模依次对所述硬质掩模层和所述测试硅片进行刻蚀形成沟槽；之后去除所述零标记层光刻胶。
步骤14、在所述沟槽中填充第一介质层，由填充于所述沟槽中的所述第一介质层组成所述零标记层图形。
进一步的改进是，步骤14中在生长所述第一介质层填充所述沟槽的同时，所述第一介质层还会延伸到所述沟槽外的所述硬质掩模层表面。
之后还包括采用以所述硬质掩模层为终点的化学机械研磨工艺对所述第一介质层进行研磨的步骤，化学机械研磨工艺后所述沟槽外的所述第一介质层被去除。
之后还包括去除所述硬质掩模层的步骤。
进一步的改进是，步骤11中所述硬质掩模层的材料为氮化硅。采用所述化学气相沉积或炉管工艺形成所述硬质掩模层；所述硬质掩模层的厚度为
Figure BDA0002141425780000031
进一步的改进是，步骤12中零标记层光刻胶的厚度为
Figure BDA0002141425780000032
进一步的改进是，步骤13中所述沟槽的深度为
Figure BDA0002141425780000033
进一步的改进是，步骤13中采用等离子刻蚀工艺对所述硬质掩模层和所述测试硅片进行刻蚀形成所述沟槽；采用湿法刻蚀工艺同时去除所述零标记层光刻胶以及所述沟槽的等离子刻蚀工艺的刻蚀残余物。
进一步的改进是，所述第一介质层的材料为氧化物。
进一步的改进是，所述第一介质层采用高密度等离子工艺或者采用高纵横比工艺生长，所述第一介质层的厚度为
Figure BDA0002141425780000034
所述第一介质层生长完成后还包括对所述第一介质层进行退火的步骤，所述第一介质层的退火采用炉管退火或快速热退火；所述第一介质层的退火的温度为1000℃。
进一步的改进是，步骤二的所述栅氧化层的形成工艺中：
采用原位水汽生成工艺进行所述氧化层生长。
采用去耦等离子氮化工艺对所述氧化层进行掺氮工艺。
进一步的改进是，步骤三中采用涂布套刻层光刻胶并对所述套刻层光刻胶进行曝光和显影形成由显影后的所述套刻层光刻胶组成的套刻层图形。
进一步的改进是，所述套刻层光刻胶的厚度为
Figure BDA0002141425780000041
进一步的改进是，所述零标记层图形的俯视面结构为条形结构，所述零标记层图形的条形结构的长度为12微米～16微米，宽度为1微米～4微米。
所述套刻层图形的俯视面结构为条形结构，所述套刻层图形的条形结构的长度为8微米～12微米，宽度为1微米～4微米。
一个所述监控结构中包括多个所述零标记层图形以及多个所述套刻层图形，多个所述零标记层图形环绕在多个所述套刻层图形的外周，多个所述套刻层图形也排列成环形结构。
进一步的改进是，一个所述监控结构中包括4个所述零标记层图形以及4个所述套刻层图形，4个所述套刻层图形排列成正方形的环形结构；4个所述零标记层图形排列成环绕在多个所述套刻层图形的外周的正方形的环形结构。
进一步的改进是，在所述测试硅片的中心区域和四周都分布有所述监控结构。
本发明为了实现对栅氧掺氮退火温度在二维平面上对栅氧化层的影响的监控，对的监控方法进行了有针对性的设置，和现有技术中直接在测试硅片上形成栅氧化层然后再测试栅氧化层的厚度来进行栅氧掺氮退火温度的监控不同，本发明方法先在测试硅片上形成零标记层图形，之后再形成掺氮的栅氧化层，之后再形成一层套刻层图形，由套刻层图形和对应的零标记层图形相套准形成监控结构，由于监控结构中的套刻层图形和对应的零标记层图形之间的套准值为沿和测试硅片的表面平行的X方向值和Y方向值，故最后对监控结构的套刻层图形和对应的零标记层图形之间的套准值进行测量就能监控栅氧掺氮退火温度在二维平面上对栅氧化层的影响，并从而能根据所测量的套准值调整栅氧掺氮退火温度，并最后能改善产品的套准精度，从而能提高产品良率。
附图说明
下面结合附图和具体实施方式对本发明作进一步详细的说明：
图1是本发明实施例栅氧掺氮退火温度的监控方法的流程图；
图2A-图2J是本发明实施例方法各步骤中的器件结构图。
具体实施方式
如图1所示，是本发明实施例栅氧掺氮退火温度的监控方法的流程图；如图2A至图2J所示，是本发明实施例方法各步骤中的器件结构图，本发明实施例栅氧掺氮退火温度的监控方法包括如下步骤：
步骤一、在测试硅片1上形成零标记层图形2。
本发明实施例中，采用如下步骤形成所述零标记层图形2：
步骤11、如图2A所示，在所述测试硅片1表面形成硬质掩模层101。
所述硬质掩模层101的材料为氮化硅。采用所述化学气相沉积或炉管工艺形成所述硬质掩模层101；所述硬质掩模层101的厚度为
Figure BDA0002141425780000051
步骤12、如图2A所示，在所述硬质掩模层101表面涂布零标记层光刻胶102。
如图2B所示，对所述零标记层光刻胶102进行曝光和显影，显影后所述零标记层光刻胶102的打开区域103即为所述零标记层图形2的形成区域。
所述零标记层光刻胶102的厚度为
Figure BDA0002141425780000052
步骤13、如图2C所示，以显影后的所述零标记层光刻胶102为掩模依次对所述硬质掩模层101和所述测试硅片1进行刻蚀形成沟槽104；之后去除所述零标记层光刻胶102。
所述沟槽104的深度为
Figure BDA0002141425780000053
采用等离子刻蚀工艺对所述硬质掩模层101和所述测试硅片1进行刻蚀形成所述沟槽104；采用湿法刻蚀工艺同时去除所述零标记层光刻胶102以及所述沟槽104的等离子刻蚀工艺的刻蚀残余物。
步骤14、在所述沟槽104中填充第一介质层2，由填充于所述沟槽104中的所述第一介质层2组成所述零标记层图形2。
如图2D所示，在生长所述第一介质层2填充所述沟槽104的同时，所述第一介质层2还会延伸到所述沟槽104外的所述硬质掩模层101表面。
较佳选择为，所述第一介质层2的材料为氧化物。所述第一介质层2采用高密度等离子工艺或者采用高纵横比工艺生长，所述第一介质层2的厚度为
Figure BDA0002141425780000054
所述第一介质层2生长完成后还包括对所述第一介质层2进行退火的步骤，所述第一介质层2的退火采用炉管退火或快速热退火；所述第一介质层2的退火的温度为1000℃。
如图2E所示，之后还包括采用以所述硬质掩模层101为终点的化学机械研磨工艺对所述第一介质层2进行研磨的步骤，化学机械研磨工艺后所述沟槽104外的所述第一介质层2被去除。
之后还包括去除所述硬质掩模层101的步骤。去除所述硬质掩模层101的步骤包括：先用氢氟酸对所述硬质掩模层101表面进行处理，以去除可能残留在所述硬质掩模层101表面的氧化层；之后采用磷酸去除所述硬质掩模层。
步骤二、在形成有所述零标记层图形的所述测试硅片1表面上形成氮掺杂的栅氧化层3，所述栅氧化层3的形成工艺包括：
氧化层生长工艺，本发明实施例中，采用原位水汽生成工艺进行所述氧化层生长。
对所述氧化层进行掺氮工艺，本发明实施例中，采用去耦等离子氮化工艺对所述氧化层进行掺氮工艺。
进行栅氧掺氮退火工艺。
步骤三、在所述栅氧化层3表面上形成套刻层图形4，所述套刻层图形4和对应的所述零标记层图形2相套准形成监控结构5，所述监控结构5中所述套刻层图形4和对应的所述零标记层图形2之间的套准值为沿和所述测试硅片1的表面平行的X方向值和Y方向值。
本发明实施例中，形成套刻层图形4的步骤包括：如图2H所示，涂布套刻层光刻胶105；如图2I所示，对所述套刻层光刻胶105进行曝光和显影形成由显影后的所述套刻层光刻胶105组成的套刻层图形4。
所述套刻层光刻胶105的厚度为
Figure BDA0002141425780000061
如图2J所示，所述零标记层图形2的俯视面结构为条形结构，所述零标记层图形2的条形结构的长度为12微米～16微米，宽度为1微米～4微米。
所述套刻层图形4的俯视面结构为条形结构，所述套刻层图形4的条形结构的长度为8微米～12微米，宽度为1微米～4微米。
一个所述监控结构5中包括多个所述零标记层图形2以及多个所述套刻层图形4，多个所述零标记层图形2环绕在多个所述套刻层图形4的外周，多个所述套刻层图形4也排列成环形结构。图2J中，一个所述监控结构5中包括4个所述零标记层图形2以及4个所述套刻层图形4，4个所述套刻层图形4排列成正方形的环形结构；4个所述零标记层图形2排列成环绕在多个所述套刻层图形4的外周的正方形的环形结构。
在所述测试硅片1的中心区域和四周都分布有所述监控结构5，这样能够实现对所述测试硅片1的表面各区域进行监控。
步骤四、测量所述测试硅片1上各所述监控结构5的所述套刻层图形4和对应的所述零标记层图形2之间的套准值，根据所测量的所述套准值调整所述栅氧掺氮退火温度。
本发明实施例为了实现对栅氧掺氮退火温度在二维平面上对栅氧化层3的影响的监控，对的监控方法进行了有针对性的设置，和现有技术中直接在测试硅片1上形成栅氧化层3然后再测试栅氧化层3的厚度来进行栅氧掺氮退火温度的监控不同，本发明实施例方法先在测试硅片1上形成零标记层图形2，之后再形成掺氮的栅氧化层3，之后再形成一层套刻层图形4，由套刻层图形4和对应的零标记层图形2相套准形成监控结构5，由于监控结构5中的套刻层图形4和对应的零标记层图形2之间的套准值为沿和测试硅片1的表面平行的X方向值和Y方向值，故最后对监控结构5的套刻层图形4和对应的零标记层图形2之间的套准值进行测量就能监控栅氧掺氮退火温度在二维平面上对栅氧化层3的影响，并从而能根据所测量的套准值调整栅氧掺氮退火温度，并最后能改善产品的套准精度，从而能提高产品良率。
以上通过具体实施例对本发明进行了详细的说明，但这些并非构成对本发明的限制。在不脱离本发明原理的情况下，本领域的技术人员还可做出许多变形和改进，这些也应视为本发明的保护范围。

Claims (13)

1.一种栅氧掺氮退火温度的监控方法，其特征在于，包括如下步骤：
步骤一、在测试硅片上形成零标记层图形；
步骤一中采用如下步骤形成所述零标记层图形：
步骤11、在所述测试硅片表面形成硬质掩模层；
步骤12、在所述硬质掩模层表面涂布零标记层光刻胶并对所述零标记层光刻胶进行曝光和显影；
步骤13、以显影后的所述零标记层光刻胶为掩模依次对所述硬质掩模层和所述测试硅片进行刻蚀形成沟槽；之后去除所述零标记层光刻胶；
步骤14、在所述沟槽中填充第一介质层，由填充于所述沟槽中的所述第一介质层组成所述零标记层图形；
步骤14中在生长所述第一介质层填充所述沟槽的同时，所述第一介质层还会延伸到所述沟槽外的所述硬质掩模层表面；
之后还包括采用以所述硬质掩模层为终点的化学机械研磨工艺对所述第一介质层进行研磨的步骤，化学机械研磨工艺后所述沟槽外的所述第一介质层被去除；
之后还包括去除所述硬质掩模层的步骤；
所述零标记层图形的顶部会突出到所述测试硅片表面之上；
步骤二、在形成有所述零标记层图形的所述测试硅片表面上形成氮掺杂的栅氧化层，所述栅氧化层的形成工艺包括：氧化层生长工艺，对所述氧化层进行掺氮工艺，进行栅氧掺氮退火工艺；
突出到所述测试硅片表面之上的所述零标记层图形的侧面会和所述栅氧化层接触，所述栅氧化层的沿和所述测试硅片平行的X方向尺寸和Y方向尺寸会对所述零标记层图形产生影响；
步骤三、在所述栅氧化层表面上形成套刻层图形，所述套刻层图形和对应的所述零标记层图形相套准形成监控结构，所述监控结构中所述套刻层图形和对应的所述零标记层图形之间的套准值为沿和所述测试硅片的表面平行的X方向值和Y方向值；
步骤四、测量所述测试硅片上各所述监控结构的所述套刻层图形和对应的所述零标记层图形之间的套准值，根据所测量的所述套准值调整所述栅氧掺氮退火温度。
2.如权利要求1所述的栅氧掺氮退火温度的监控方法，其特征在于：步骤11中所述硬质掩模层的材料为氮化硅；采用化学气相沉积或炉管工艺形成所述硬质掩模层；所述硬质掩模层的厚度为
Figure FDA0003425656840000021
3.如权利要求1所述的栅氧掺氮退火温度的监控方法，其特征在于：步骤12中零标记层光刻胶的厚度为
Figure FDA0003425656840000022
4.如权利要求1所述的栅氧掺氮退火温度的监控方法，其特征在于：步骤13中所述沟槽的深度为
Figure FDA0003425656840000023
5.如权利要求1所述的栅氧掺氮退火温度的监控方法，其特征在于：步骤13中采用等离子刻蚀工艺对所述硬质掩模层和所述测试硅片进行刻蚀形成所述沟槽；采用湿法刻蚀工艺同时去除所述零标记层光刻胶以及所述沟槽的等离子刻蚀工艺的刻蚀残余物。
6.如权利要求2所述的栅氧掺氮退火温度的监控方法，其特征在于：所述第一介质层的材料为氧化物。
7.如权利要求6所述的栅氧掺氮退火温度的监控方法，其特征在于：所述第一介质层采用高密度等离子工艺或者采用高纵横比工艺生长，所述第一介质层的厚度为
Figure FDA0003425656840000024
所述第一介质层生长完成后还包括对所述第一介质层进行退火的步骤，所述第一介质层的退火采用炉管退火或快速热退火；所述第一介质层的退火的温度为1000℃。
8.如权利要求1所述的栅氧掺氮退火温度的监控方法，其特征在于：步骤二的所述栅氧化层的形成工艺中：
采用原位水汽生成工艺进行所述氧化层生长；
采用去耦等离子氮化工艺对所述氧化层进行掺氮工艺。
9.如权利要求1所述的栅氧掺氮退火温度的监控方法，其特征在于：步骤三中采用涂布套刻层光刻胶并对所述套刻层光刻胶进行曝光和显影形成由显影后的所述套刻层光刻胶组成的套刻层图形。
10.如权利要求9所述的栅氧掺氮退火温度的监控方法，其特征在于：所述套刻层光刻胶的厚度为
Figure FDA0003425656840000025
11.如权利要求1所述的栅氧掺氮退火温度的监控方法，其特征在于：所述零标记层图形的俯视面结构为条形结构，所述零标记层图形的条形结构的长度为12微米～16微米，宽度为1微米～4微米；
所述套刻层图形的俯视面结构为条形结构，所述套刻层图形的条形结构的长度为8微米～12微米，宽度为1微米～4微米；
一个所述监控结构中包括多个所述零标记层图形以及多个所述套刻层图形，多个所述零标记层图形环绕在多个所述套刻层图形的外周，多个所述套刻层图形也排列成环形结构。
12.如权利要求11所述的栅氧掺氮退火温度的监控方法，其特征在于：一个所述监控结构中包括4个所述零标记层图形以及4个所述套刻层图形，4个所述套刻层图形排列成正方形的环形结构；4个所述零标记层图形排列成环绕在多个所述套刻层图形的外周的正方形的环形结构。
13.如权利要求1或11或12所述的栅氧掺氮退火温度的监控方法，其特征在于：在所述测试硅片的中心区域和四周都分布有所述监控结构。
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