CN110310937A - Built-in type component structure and its manufacturing method - Google Patents
Built-in type component structure and its manufacturing method Download PDFInfo
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- CN110310937A CN110310937A CN201810842418.5A CN201810842418A CN110310937A CN 110310937 A CN110310937 A CN 110310937A CN 201810842418 A CN201810842418 A CN 201810842418A CN 110310937 A CN110310937 A CN 110310937A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 65
- 239000010410 layer Substances 0.000 claims abstract description 424
- 239000003989 dielectric material Substances 0.000 claims abstract description 66
- 239000012792 core layer Substances 0.000 claims abstract description 53
- 239000000463 material Substances 0.000 claims description 31
- 239000004020 conductor Substances 0.000 claims description 17
- 238000003466 welding Methods 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000005553 drilling Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000003973 paint Substances 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- QMXRSKOPUAPPNY-UHFFFAOYSA-N C[Si]C.N Chemical compound C[Si]C.N QMXRSKOPUAPPNY-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- QULMGWCCKILBTO-UHFFFAOYSA-N n-[dimethylamino(dimethyl)silyl]-n-methylmethanamine Chemical compound CN(C)[Si](C)(C)N(C)C QULMGWCCKILBTO-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
It includes wiring board, electronic component, dielectric materials layer and connection line layer that the present invention, which provides a kind of built-in type component structure and its manufacturing method, built-in type component structure,.Wiring board has wears groove and including core layer, first line layer, the second line layer and via hole.First line layer and the second line layer are located at the opposite sides of core layer.Wears groove runs through first line layer and core layer.Via hole is electrically connected first line layer and the second line layer.Electronic component is set in wears groove and including multiple connection gaskets.It is coplanar that the first of first line layer is electrically connected face and the second electric connection face of connection gasket.Dielectric materials layer is filled in wears groove.Connection line layer contact first is electrically connected face and is electrically connected face with second.
Description
Technical field
The present invention relates to a kind of electronic component and its manufacturing method more particularly to a kind of built-in type component structure and its manufactures
Method.
Background technique
It, at least can be by via hole (conductive through via) to incite somebody to action in general built-in type component structure
Electronic component and printed circuit board (printed circuit board；PCB) it is connected.However, above-mentioned connection type can make
Electrical transmission path between electronic component and printed circuit board is long, be likely to result in electronic product power (power) and/or
The attenuation degree of signal (signal) is high, is also easy to produce noise (noise), therefore reduce the quality of electronic product.Also,
Such built-in type component structure production method is complex, and thickness is thicker.
Summary of the invention
The present invention provides a kind of built-in type component structure and preparation method thereof, thickness can relatively thin and manufacturing method can be with
It is relatively simple.
Built-in type component structure of the invention includes wiring board, electronic component, dielectric materials layer and connection line layer.Line
Road plate has wears groove.Wiring board includes core layer, first line layer, the second line layer and an at least via hole.First line
Layer is located at the opposite sides of core layer with the second line layer.Wears groove at least runs through first line layer and core layer.Conducting
Core layer is run through in hole, to be electrically connected first line layer and the second line layer.Electronic component is set in wears groove.Electronic package
Include the multiple connection gaskets being exposed to outside wears groove.The first of first line layer is electrically connected face and the second of each connection gasket and is electrically connected
Face is coplanar.Dielectric materials layer is at least filled in wears groove.Connection line layer covers and contacts the first electric connection face and each the
Two are electrically connected face.Connection gasket is electrically connected to first line layer by connection line layer.
In one embodiment of this invention, above-mentioned dielectric materials layer is further filled in each connection gasket and first line layer
Between.Dielectric materials layer, which has, is electrically connected the coplanar dielectric surface in face with first.Connection line layer covers and contacts first
Electric connection face, dielectric surface and second are electrically connected face.
In one embodiment of this invention, it is being electrically connected on the section in face perpendicular to first, above-mentioned connection line layer
It is consistent in the section thickness that first is electrically connected on face, dielectric surface and the second electric connection face.
In one embodiment of this invention, the sectional area of above-mentioned wears groove is greater than electronic component in the second electric connection face
Surface area.
In one embodiment of this invention, above-mentioned built-in type component structure further includes the first dielectric layer.First dielectric layer
The same side of core layer is set to first line layer.First dielectric layer cover first line layer at least partly with connection line
At least partly, and the first dielectric layer has at least one opening for exposing first line layer or connection line layer to layer.
In one embodiment of this invention, the composition material of the first above-mentioned dielectric layer includes anti-welding material.
In one embodiment of this invention, above-mentioned dielectric materials layer has the covering part being located at outside wears groove.Covering part is covered
Side in lid core layer where the second line layer, and covering part covers the second line layer at least partly.
In one embodiment of this invention, the covering part of above-mentioned dielectric materials layer has and exposes the second line layer or lead
An at least dielectric openings for through-hole.
In one embodiment of this invention, above-mentioned built-in type component structure further includes the second dielectric layer.Second dielectric layer
The covering part of dielectric materials layer is covered, and the second dielectric layer has at least one opening for exposing the second line layer or via hole.
In one embodiment of this invention, the composition material of the second above-mentioned dielectric layer includes anti-welding material.
In one embodiment of this invention, above-mentioned wears groove is connected with an at least via hole.
The manufacturing method of built-in type component structure of the invention includes the following steps.Carrier is provided.Wiring board is placed in load
On body.Wiring board has wears groove.Wiring board includes core layer, first line layer and the second line layer.The contact of first line layer
Carrier.First line layer and the second line layer are located at the opposite sides of core layer.Wears groove at least run through first line layer with
And core layer.Electronic component is placed on carrier.Electronic component has multiple connection gaskets.These connection gasket contact carriers.It is inciting somebody to action
Wiring board and electronic component are placed on carrier, and after being embedded in electronic component in wears groove, form dielectric materials layer in carrier
On.Dielectric materials layer is at least filled in wears groove.Carrier is removed, to expose first line layer and these connection gaskets.First
It is coplanar that the first of line layer is electrically connected face and the second electric connection face of each connection gasket.After removing carrier, connection is formed
Line layer.Connection line layer covers and contacts the first electric connection face and each second electric connection face.
In one embodiment of this invention, above-mentioned wiring board further includes an at least via hole.Via hole runs through core layer,
To be electrically connected first line layer and the second line layer.
In one embodiment of this invention, above-mentioned wears groove is connected with each other logical with via hole.
In one embodiment of this invention, the manufacturing method of above-mentioned built-in type element is further comprising the steps of.The company of being formed
After link layer, the first dielectric layer is formed.First dielectric layer cover first line layer at least partly with connection line layer
At least partly.
In one embodiment of this invention, the composition material of the first above-mentioned dielectric layer includes anti-welding material.
In one embodiment of this invention, the manufacturing method of above-mentioned built-in type component structure is further comprising the steps of.Shape
After dielectric materials layer, run through at least consistent of core layer, first line layer and the second line layer in being formed on wiring board
Hole.In inserting conductive material in an at least perforation, to constitute at least via hole for running through core layer.Via hole is electrically connected the
One line layer and the second line layer.
In one embodiment of this invention, above-mentioned dielectric materials layer has the covering part being located at outside wears groove.Covering part is covered
Side in lid core layer where the second line layer, and cover the second line layer at least partly.
In one embodiment of this invention, the manufacturing method of above-mentioned built-in type component structure is further comprising the steps of.In
An at least dielectric openings are formed in the covering part of dielectric materials layer.Dielectric openings expose the second line layer.
In one embodiment of this invention, the manufacturing method of above-mentioned built-in type component structure is further comprising the steps of.Shape
At the second dielectric layer.The covering part of second dielectric layer covering dielectric materials layer.
In one embodiment of this invention, the manufacturing method of above-mentioned built-in type component structure is further comprising the steps of.In
At least one second opening is formed on second dielectric layer.Second opening exposes the second line layer.
In one embodiment of this invention, the composition material of the second above-mentioned dielectric layer includes anti-welding material.
Based on above-mentioned, in built-in type component structure of the present invention, by connection line layer directly by electronic component and route
Plate is electrically connected, and can need not form or omit the via hole between electronic component and wiring board.Therefore, built-in type element knot
The manufacturing method of structure can be relatively simple, and thickness can be relatively thin.In addition, by connection line layer can reduce electronic component with
Line length between wiring board, and then signal transmission time (that is, time delay (delay time)) can be reduced, and then can mention
Rise the transmission rate between different electronic components.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and cooperate appended attached drawing
It is described in detail below.
Detailed description of the invention
Figure 1A to Fig. 1 H is cutd open according to a kind of manufacturing method of built-in type component structure of the first embodiment of the present invention
Face schematic diagram.
Fig. 1 I is the upper schematic diagram according to a kind of built-in type component structure of the first embodiment of the present invention.
Fig. 2 is the diagrammatic cross-section according to a kind of built-in type component structure of the second embodiment of the present invention.
Fig. 3 A to Fig. 3 E is cutd open according to a kind of manufacturing method of built-in type component structure of the third embodiment of the present invention
Face schematic diagram.
Fig. 4 A, Fig. 4 B and Fig. 4 D are the manufacturing methods according to a kind of built-in type component structure of the fourth embodiment of the present invention
Lower view schematic diagram.
Fig. 4 C, Fig. 4 E to Fig. 4 H are the manufacturing methods according to a kind of built-in type component structure of the fourth embodiment of the present invention
Diagrammatic cross-section.
Fig. 5 A to Fig. 5 F is cutd open according to a kind of manufacturing method of built-in type component structure of the fifth embodiment of the present invention
Face schematic diagram.
Fig. 5 G is the upper schematic diagram according to a kind of built-in type component structure of the fifth embodiment of the present invention.
Fig. 6 is the diagrammatic cross-section according to a kind of built-in type component structure of the sixth embodiment of the present invention.
Fig. 7 is the diagrammatic cross-section according to a kind of built-in type component structure of the seventh embodiment of the present invention.
[symbol description]
100,200,300,400,500,600,700: built-in type element
110,310', 310,410', 410: wiring board
110a, 310'a, 310a, 410a: the first side
110b, 310b, 410b: second side
110c, 410c: wears groove
310e: perforation
111: core layer
111d: core layer side wall
112,112', 112 ": first line layer
112a: the first is electrically connected face
112d: first line layer side wall
113: the second line layers
113a: third is electrically connected face
113d: the second line layer side wall
114,114', 114 ", 314: via hole
120,520: electronic component
121: connection gasket
121a, 521a: second is electrically connected face
521: the first connection gaskets
522: the second connection gaskets
130: dielectric materials layer
130a, 530a: dielectric surface
530: the first dielectric materials layers
131,531: covering part
131a, 531a: dielectric openings
535: the second dielectric materials layers
535a: dielectric openings
140: connection line layer
140h1,140h2,140h3: thickness
150,250,350,450,650: the first dielectric layer
150a, 250a, 350a, 450a, 650a: the first dielectric openings
160,260,360,460: the second dielectric layer
160a, 260a, 360a, 460a: the second dielectric openings
170: tertiary circuit layer
180: the four line layers
590: line layer
10: carrier
10a: carrier surface
R: region
Specific embodiment
For the present invention aforementioned and other technology contents, feature and effect refer to each implementation of attached drawing in following cooperation
In the detailed description of example, can clearly it present.The direction term being previously mentioned in following embodiment, such as: "upper", "lower",
"front", "rear", "left", "right" etc. are only the directions with reference to attached drawing.Therefore, the direction term used is
For limiting the present invention.
In the detailed description of each embodiment, the terms such as " first ", " second ", " third ", " the 4th " can be used for describing not
Same element.These terms are only used to which element is distinguished from each other, but in the structure, these elements should not be limited by these terms.
For example, the first element can be referred to as second element, also, similarly, second element can be referred to as the first element without carrying on the back
Protection scope from present inventive concept.In addition, in a manufacturing method, in addition to specific manufacturing process, these elements or component
Formation sequence should not be also limited by these terms.For example, the first element can be formed before second element.Or first yuan
Element can be formed after second element.Also or, the first element and second element can be in identical manufacturing method or steps
Middle formation.
Also, the thickness of layer and region in attached drawing can for the sake of clarity amplify.The same or similar symbol indicates
The same or similar element, following paragraphs will be repeated no longer one by one.
Figure 1A to Fig. 1 H is cutd open according to a kind of manufacturing method of built-in type component structure of the first embodiment of the present invention
Face schematic diagram.Fig. 1 I is the upper schematic diagram according to a kind of built-in type component structure of the first embodiment of the present invention.It is specific and
Speech, Fig. 1 H is the enlarged drawing of region R in Fig. 1 G.
Figure 1A is please referred to, a wiring board 110 is provided.Wiring board 110 includes core layer 111, first line layer 112 and the
Two line layers 113.First side 110a of 112 assist side 110 of first line layer and be located at core layer 111 on, the second line layer
Second side 110b of 113 assist sides 110 and be located at core layer 111 on.First side 110a is relative to second side 110b.Wiring board
110 have wears groove (through hole) 110c.Wears groove 110c at least runs through first line layer 112 and core layer 111.Also
It is to say, wears groove 110c is at least made of the side wall 112d of the side wall 111d of core layer 111 and first line layer 112.And
Two first line layers 112 ', 112 " in the two sides wears groove 110c are separated from each other in structure and electrical property.
In the present embodiment, wears groove 110c also extends through the second line layer 113.That is, in the present embodiment, wears groove
110c can be by the side of the side wall 111d of core layer 111, the side wall 112d of first line layer 112 and the second line layer 113
Wall 113d is constituted.
In the present embodiment, core layer 111 may include macromolecule glass fiber compound material substrate, glass substrate, ceramics
Substrate, insulation silicon substrate or polyimides (polyimide；PI) glass fibre composite substrate etc., however, the present invention is not limited thereto.?
That is in the present embodiment, core layer 111 can be with the first line layer 112 and the second route positioned at its opposite sides
Layer 113 constitutes double-sided wiring board (double sided wiring board).For example, wiring board 110 can be copper foil base
Plate (CopperClad Laminate；CCL) or other suitable printed circuit boards, however, the present invention is not limited thereto.
In some embodiments, first line layer 112 and/or the second line layer 113 can be one or more layers conduction
Layer, in the invention is not limited thereto.Also, or first line layer 112 and/or the second line layer 113 are the conductive layer of multilayer, then it is more
It can be separated, and can be made not by via hole (conductive via) by insulating layer between the conductive layer of layer
It can be electrically connected to each other between same conductive layer.Via hole is, for example, buried via hole (Buried Via Hole；BVH), but it is of the invention
It is without being limited thereto.
In the present embodiment, wiring board 110 can further include an at least via hole 114, so that positioned at the first side 110a's
First line layer 112 can be electrically connected to each other with the second line layer 113 positioned at second side 110b.In other embodiments,
Similar wiring board can also not have via hole.
In the present embodiment, via hole 114 can be hollow electroplating ventilating hole (plating through hole；PTH),
However, the present invention is not limited thereto.In some embodiments, via hole 114 can be solid conductive column.In some embodiments, it leads
Among through-hole 114 or plug socket resin material or macromolecule glass ceramics mixing material etc., but not limited to this.
Figure 1B is please referred to, a carrier 10 is provided.Also, electrically connect with first of the first line layer 112 in core layer 111
The carrier surface 10a of junction 112a (that is, farthest away from the exposed surface of core layer 111 on first line layer 112) towards carrier 10
Mode, wiring board 110 is placed on carrier 10.Carrier 10 can be carrying belt (carrier tape), e.g. blue film glue
Band (blue tape), however, the present invention is not limited thereto.In other embodiments, carrier 10 can be metal substrate, silicon substrate, glass
Glass substrate, ceramic substrate or other suitable support plates that can be used for supporting.
As shown in Figure 1B, after wiring board 110 is placed on carrier 10,112 contact carrier 10 of first line layer.At this
In embodiment, first line layer 112 first be electrically connected face 112a can directly contact carrier 10 carrier surface 10a, but
The invention is not limited thereto.In other embodiments, if there is adhesion coating (such as: release film) between wiring board 110 and carrier 10,
The first of first line layer 112 is electrically connected face 112a can be with mediate contact carrier 10.In general, carrier 10 or wiring board
110 thickness can be millimeter (millimeter；Mm) grade or centimetre (centimeter；Cm) grade, and adhesion coating can be with
For micron (micrometer；μm) grade.Therefore, compared to the thickness of carrier 10 or the thickness of wiring board 110, the thickness of adhesion coating
Degree can be very it is thin, therefore general naked eyes visually, even if between wiring board 110 and carrier 10 have adhesion coating,
112 contact carrier 10 of first line layer can be considered as.
Fig. 1 C is please referred to, electronic component 120 is placed on carrier 10.Specifically, the side of electronic component 120 can have
There are multiple connection gaskets 121, and is electrically connected face 121a towards carrier 10 with the second of each connection gasket 121 of electronic component 120
Carrier surface 10a mode, electronic component 120 is placed on carrier 10.
As shown in Figure 1 C, after electronic component 120 is placed on carrier 10, these 121 contact carriers 10 of connection gasket.?
In the present embodiment, each connection gasket 121 second be electrically connected face 121a can directly contact carrier 10 carrier surface 10a,
However, the present invention is not limited thereto.In other embodiments, if there is adhesion coating (such as: release between electronic component 120 and carrier 10
Film), then the second electric connection face 121a of each connection gasket 121 can be with mediate contact carrier 10.With by multi-layer ceramic capacitance
(Multilayer Ceramic Capacitor；MLCC) as electronic component 120, the thickness of 0402 capacitor is about 500
Micron, the thickness of 0603 capacitor is about 800 microns.Therefore, compared to the thickness of electronic component 120, the thickness of adhesion coating can be with
Very thin, thus general naked eyes visually, can also be with even if having adhesion coating between electronic component 120 and carrier 10
It is considered as 120 contact carrier 10 of electronic component.
In the present embodiment, it can be and first wiring board 110 be placed on carrier 10, then electronic component 120 is placed in carrier
On 10, and it is embedded in electronic component 120 in the wears groove 110c of wiring board 110, however, the present invention is not limited thereto.In other embodiments
In, it can be and first electronic component 120 is placed on carrier 10, then wiring board 110 is placed on carrier 10, and by wiring board 110
Wears groove 110c be aligned electronic component 120 so that electronic component 120 is embedded in the wears groove 110c of wiring board 110.
In the present embodiment, the thickness of wiring board 110 and the thickness of electronic component 120 can be the same or different, in
The present invention is not limited thereto.But it is noted that the sectional area of the wears groove 110c of wiring board 110 need to be greater than electronic component 120
Sectional area in these 121 sides of connection gasket so that electronic component 120 be suitable for be embedded in the wears groove 110c of wiring board 110, and
It is exposed to the connection gasket 121 of electronic component 120 outside wears groove 110c.
Fig. 1 D is please referred to, is placed on carrier 10 by wiring board 110 and electronic component 120, and is embedded in electronic component 120
After in wears groove 110c, dielectric materials layer 130 is formed on carrier 10, and dielectric materials layer 130 is at least filled in wears groove
In 110c (being illustrated in Fig. 1 C).It in the present embodiment, such as can be by resin (such as: epoxy resin (epoxy)), silane (such as: six
Tetramethyldisiloxane (hexamethyldisiloxane；HMDSN), tetraethoxysilane (tetraethoxysilane；
TEOS), double dimethyl amine dimethyl-silicon azane (bis (dimethylamino) dimethylsilane；BDMADMS)) or other
Suitable dielectric material is coated on carrier 10 and is solidified, to form dielectric materials layer 130.Therefore, dielectric materials layer
130 can be filled in wears groove 110c, and between electronic component 120 and wiring board 110, so that electronic component 120 and line
There is good buffering between road plate 110.
In the present embodiment, the dielectric materials layer 130 being filled in wears groove 110c can be with contact carrier 10, but the present invention is not
It is limited to this.
In the present embodiment, dielectric materials layer 130 may include covering part 131.Covering part 131 be located at wears groove 110c it is outer and
It is covered on the second line layer 113.
In the present embodiment, can by etch, grind drilling, laser drill or other be suitable for manufactures, in covering
An at least dielectric openings 131a is formed in cover 131.
In the present embodiment, dielectric openings 131a can expose via hole 114, however, the present invention is not limited thereto.At other
In embodiment, the third that dielectric openings 131a can expose the second line layer 113 is electrically connected face 113a (that is, the second route
Farthest away from the exposed surface of core layer 111 on layer 113).
Fig. 1 E is please referred to, after forming dielectric materials layer 130, is removed on carrier 10 (being illustrated in Fig. 1 D) and carrier 10
Adhesion coating (if having), to expose the first of first line layer 112 the second electricity for being electrically connected face 112a and each connection gasket 121
Property joint face 121a.It is all placed on carrier 10 due to wiring board 110 with electronic component 120 and is contacted with carrier 10, the
The first of one line layer 112 be electrically connected face 112a and each connection gasket 121 second be electrically connected face 121a substantially can be with
Coplanar (coplanar).
In the present embodiment, if 130 contact carrier 10 of dielectric materials layer being filled in wears groove 110c (being illustrated in Fig. 1 C),
Then the first electric connection face 112a and each connection gasket of the dielectric surface 130a of dielectric materials layer 130, first line layer 112
The second of 121 is electrically connected face 121a substantially can be coplanar.
In addition, can be spun upside down the structure of Fig. 1 D (upside down) before or after removing carrier 10, with
After removing carrier 10, structure as referring to figure 1E may be constructed.
Fig. 1 F is please referred to, connection line layer 140 is formed.Connection line layer 140 is to cover and contact the first electric connection face
112a and each second is electrically connected a film layer of face 121a.Connection line layer 140 can be by rerouting circuit manufacturing method
(redistribution layer process；RDL process) or other suitable patterning wire manufacturing methods carry out shape
At.
The exemplary generation type of one of which of connection line layer 140 can be as follows.It is possible, firstly, to first in a manner of sputter
In the comprehensive formation seed layer of the first side 110a (seed layer) (not shown) of wiring board 110.Seed layer and first line
The first of layer 112 is electrically connected face 112a, the second electric connection face 121a of connection gasket 121 and Jie of dielectric materials layer 130
Ammeter face 130a conformal (conformal).Common seed layer has titanium layer and/or layers of copper, however, the real material of seed layer takes
Certainly in being subsequently formed in the conductive material on kind of crystal layer.Then, in formation photoresist layer (not shown) on seed layer.Photoresist layer covers
The seed layer of cover.Photoresist layer can be formed by lithographic manufacturing method.There are photoresist layer multiple first electrical property that correspond to connect
The opening of junction 112a, the second electric connection face 121a and dielectric surface 130a, are located at the first electric connection face to expose
Part seed layer above 112a, the second electric connection face 121a and dielectric surface 130a.It is formed after photoresist layer, in opening
Conductive material layer (not shown) is formed on the seed layer exposed.Conductive material layer can pass through galvanoplastic
(electroplating) it is formed on the seed layer.The material of conductive material layer can be similar to the material of seed layer, but this hair
It is bright without being limited thereto.After forming conductive material layer, photoresist layer and the partially electronically conductive material layer on photoresist layer are removed.It connects
, using the conductive material layer being not removed as exposure mask, remove the seed layer that part is not covered by conductive material layer.Such one
Come, the seed layer being not removed and the conductive material layer being not removed may be constructed connection line layer 140.
Fig. 1 G is please referred to, after forming connection line layer 140, first is formed in the first side 110a of wiring board 110 and is situated between
Electric layer 150.First dielectric layer 150 can be formed by deposition method for preparing or coating manufacturing method.It then, can be by lithographic system
Method (photolithography process) and etching manufacturing method are made to pattern, exposes the first of part to be formed
First dielectric openings 150a of line layer 112 and/or partial connection line layer 140.
In the present embodiment, the second dielectric layer 160 can be formed in second side 110b of wiring board 110.Second dielectric layer
160 can be formed by deposition method for preparing or coating manufacturing method.Then, lithographic manufacturing method and etching manufacturer can be passed through
Method patterns, to form the second dielectric openings of the second line layer 113 and/or partial via hole 114 that expose part
160a。
It in the present embodiment, can be in formation third line on the first dielectric layer 150 after forming the first dielectric layer 150
Road floor 170.The generation type of tertiary circuit layer 170 can be similar to connection line layer 140, therefore will not be repeated here in this.In addition,
The conductive material for being used to form tertiary circuit layer 170 can be filled in the first dielectric openings 150a of the first dielectric layer 150, so that
Tertiary circuit layer 170 can be electrically connected with first line layer 112 and/or connection line layer 140.
It in the present embodiment, can be in the 4th line of formation on the second dielectric layer 160 after forming the second dielectric layer 160
Road floor 180.The generation type of 4th line layer 180 can be similar to connection line layer 140, therefore will not be repeated here in this.In addition,
The conductive material for being used to form the 4th line layer 180 can be filled in the second dielectric openings 160a of the second dielectric layer 160, so that
4th line layer 180 can be electrically connected with the second line layer 113 and/or via hole 114.
Fig. 1 G to Fig. 1 I is please referred to, the built-in type component structure of the present embodiment can be substantially completed after above-mentioned manufacture
100 production.Above-mentioned built-in type component structure 100 include wiring board 110, electronic component 120, dielectric materials layer 130 and
Connection line layer 140.Wiring board 110 has wears groove 110c.Wiring board 110 includes core layer 111, first line layer 112, second
Line layer 113 and at least a via hole 114.First line layer 112 and the second line layer 113 are located at core layer 111
Opposite sides.Wears groove 110c runs through first line layer 112, core layer 111 and the second line layer 113.Via hole 114 runs through core
Central layer 111, to be electrically connected first line layer 112 and the second line layer 113.Electronic component 120 is set in wears groove 110c.Electricity
Subcomponent 120 includes multiple connection gaskets 121.In top view, multiple connection gaskets 121 are exposed to outside wears groove 110c.In sectional view
In, the first of first line layer 112 is electrically connected face 112a and the second of each connection gasket 121 and is electrically connected face 121a substantially
It is coplanar.Dielectric materials layer 130 is at least filled in wears groove 110c.Connection line layer 140 covers and contacts the first electric connection
Face 112a and each second is electrically connected face 121a.Connection gasket 121 is electrically connected to first line layer by connection line layer 140
112。
In the present embodiment, dielectric materials layer 130 be further filled in each connection gasket 121 and first line layer 112 it
Between.Dielectric materials layer 130 has dielectric surface 130a.Dielectric surface 130a is substantially put down altogether with the first electric connection face 112a
Face.Connection line layer 140 covers and contacts the first electric connection face 112a, dielectric surface 130a and the second electric connection face
121a。
In the present embodiment, it in sectional view, is being electrically connected on the section of face 112a perpendicular to first, connection line layer
140 are electrically connected the section of section thickness 140h1, connection line layer 140 on dielectric surface 130a on the 112a of face first
Thickness 140h3 and the section thickness 140h2 that connection line layer 140 is electrically connected on the 121a of face second are substantially consistent.
In the present embodiment, in top view, the sectional area of wears groove 110c is greater than the second surface for being electrically connected face 121a
Product.
In the present embodiment, built-in type component structure 100 further includes the first dielectric layer 150.First dielectric layer 150 and first
Line layer 112 is set to the same side of core layer 111.First dielectric layer 150 cover first line layer 112 at least partly and even
Link layer 140 is at least partly.First dielectric layer 150, which has, exposes first line layer 112 or connection line layer 140 extremely
Few one first dielectric openings 150a.
In the present embodiment, dielectric materials layer 130 has the covering part 131 being located at outside wears groove 110c.Covering part 131 covers
Side in core layer 111 where second line layer 113.Covering part 131 covers the second line layer 113 at least partly.
In the present embodiment, the covering part 131 of dielectric materials layer 130, which has, exposes the second line layer 113 or via hole
A 114 at least dielectric openings 131a.
In the present embodiment, built-in type component structure 100 further includes the second dielectric layer 160.Second dielectric layer 160 and second
Line layer 113 is set to the same side of core layer 111.Second dielectric layer 160 cover the second line layer 113 at least partly with lead
Through-hole 114 is at least partly.Second dielectric layer 160, which has, exposes at least the one second of the second line layer 113 or via hole 114
Dielectric openings 160a.
Based on above-mentioned, directly electronic component 120 and wiring board 110 are electrically connected by connection line layer 140, and can be with
It need not form or omit the via hole between electronic component 120 and wiring board 110 (because of nothing, therefore nothing is shown).Therefore, built-in type member
The manufacturing method of part structure 100 can be relatively simple, and thickness can be relatively thin.In addition, can be reduced by connection line layer 140
Line length between electronic component 120 and wiring board 110, and then signal transmission time can be reduced, and then can be promoted not
With the transmission rate between electronic component.
Fig. 2 is the diagrammatic cross-section according to a kind of built-in type component structure of the second embodiment of the present invention.
The manufacturing method of the built-in type component structure 200 of the present embodiment and the built-in type component structure 100 of first embodiment
Manufacturing method it is similar, similar component is indicated with identical label, and has the function of similar, material or generation type,
And omit description.For in structure, the built-in type component structure 200 of the present embodiment and the built-in type element knot of first embodiment
Structure 100 is similar, main difference is that: the composition material of the first dielectric layer 250 includes anti-welding material and/or the second dielectric layer 260
Composition material include anti-welding material.
In the present embodiment, the first dielectric layer 250 can be dry film solder mask (dry film solder mask；DFSM)
Or liquid photosensitive welding resistant paint (liquid photoimageable solder mask；LPSM).First dielectric layer 250 has more
A first dielectric openings 250a.First dielectric openings 250a can expose the first line layer 112 of corresponding part, part
Connection line layer 140 and/or partial via hole 114.
In the present embodiment, the second dielectric layer 260 can be dry film solder mask or liquid photosensitive welding resistant paint.Second dielectric layer
260 have at least one second dielectric openings 260a.Second dielectric openings 260a can expose the via hole of corresponding part
114.In other embodiments, the second dielectric openings 260a can expose the second line layer 113 of corresponding part.
Fig. 3 A to Fig. 3 E is cutd open according to a kind of manufacturing method of built-in type component structure of the third embodiment of the present invention
Face schematic diagram.
The manufacturing method of the built-in type component structure 300 of the present embodiment and the built-in type component structure 100 of first embodiment
Manufacturing method it is similar, similar component is indicated with identical label, and has the function of similar, material or generation type,
And omit description.
A referring to figure 3. provides a wiring board 310 '.For in structure, wiring board 310 ' in Fig. 3 A in Figure 1A
In 110 structure of wiring board it is similar, main difference is that: wiring board 310 ' does not have via hole (because of nothing, therefore without show).
Then, wiring board 310 ' and electronic component 120 are placed in carrier by can be by being similar to Figure 1A to Fig. 1 D the step of
On 10, and it is embedded in electronic component 120 in wears groove 110c.Then, dielectric materials layer 130 is formed on carrier 10, and dielectric
Material layer 130 is at least filled in wears groove 110c (being illustrated in Fig. 3 A), to form structure as shown in Figure 3B.
C referring to figure 3. can spin upside down the structure of Fig. 3 B before or after removing carrier 10, to carry in removal
It, can be by etching, grinding drilling, laser drill or other suitable manufacturing methods, in shape on wiring board 310 ' after body 10
At an at least perforation 310e.Perforation 310e runs through core layer 111, first line layer 112 and the second line layer 113.
It is worth noting that, the step of being not intended to limit aforementioned removal carrier 10 in the present embodiment, aforementioned spinning upside down
Step and sequence the step of be previously formed an at least perforation 310e.That is, three steps above-mentioned can be according to system
The demand of mode is made, and carries out the adjustment of adaptability on tandem.
In the present embodiment, it is had been inserted into due to electronic component 120 in the wears groove 110c (being illustrated in Fig. 3 A) of wiring board 310 ',
And be filled in the dielectric materials layer 130 in wears groove 110c can be fixed by the electronic component 120 in wears groove 110c, and provide electronics
There is good buffering between element 120 and wiring board 310 '.Therefore, during forming perforation 310e, electronic component 120
Or wiring board 310 ' may be influenced (such as: grinding vibration when drilling and make electronic component 120 or wiring board 310 ' by stress
Between generate stress), but still the offset of electronic component 120 can be reduced.
D referring to figure 3., remove carrier 10 (being illustrated in Fig. 3 B) and formed an at least perforation 310e (being illustrated in Fig. 3 C) it
Afterwards, connection line layer 140 is formed.Also, by the forming method for being similar to connection line layer 140, inserted in Yu Guankong 310e
Conductive material, to form via hole 114.For example, via hole 114 and connection line layer 140 can pass through identical manufacture
Method is formed.Perforation can be inserted for constituting the seed layer of connection line layer 140 or the conductive material being covered on seed layer
In 310e, to form via hole 314.Via hole 314 can be electrically connected at first line layer 112 and the second line layer 113.Such as
This one, may be constructed the wiring board with core layer 111, first line layer 112, the second line layer 113 and via hole 314
310。
E referring to figure 3. can be in the first side of wiring board 310 after forming connection line layer 140 and via hole 314
310a forms the first dielectric layer 350.First dielectric layer 350 has at least one first dielectric openings 350a.First dielectric openings
350a exposes the connection line layer 140 and/or partial via hole 314 of the first line layer 112 of part, part.
In the present embodiment, the second dielectric layer 360 can be formed in second side 310b of wiring board 310.Second dielectric layer
360 have at least one second dielectric openings 360a.Second dielectric openings 360a expose part the second line layer 113 and/or
Partial via hole 314.
In other embodiments, the first dielectric layer 350 and/or the second dielectric layer 360 can be dry film solder mask or liquid
Light sensitive anti-solder paint.
The production of the built-in type component structure 300 of the present embodiment can be substantially completed after above-mentioned manufacture.This implementation
The built-in type component structure 300 of example is similar with the built-in type component structure 100 of first embodiment, the difference is that: the present embodiment
The production method of built-in type component structure 300 is that electronic component 120 is first embedded in wearing for the wiring board 310 ' without via hole
In slot 110c, and then form the wiring board 310 with via hole 314.
Fig. 4 A, Fig. 4 B and Fig. 4 D are the manufacturing methods according to a kind of built-in type component structure of the fourth embodiment of the present invention
Lower view schematic diagram.Fig. 4 C, Fig. 4 E to Fig. 4 H are the systems according to a kind of built-in type component structure of the fourth embodiment of the present invention
Make the diagrammatic cross-section of method.
The manufacturing method of the built-in type component structure 400 of the present embodiment and the built-in type component structure 100 of first embodiment
Manufacturing method it is similar, similar component is indicated with identical label, and has the function of similar, material or generation type,
And omit description.
A referring to figure 4. provides a wiring board 410 '.For in structure, wiring board 410 ' in Fig. 4 A in Figure 1A
In 110 structure of wiring board it is similar, main difference is that: wiring board 410 ' does not have wears groove (because of nothing, therefore without show).
B and Fig. 4 C referring to figure 4. forms the wiring board 410 with wears groove 410c.It for example, can be by etching, grinding
Abrasive drilling hole, laser drill or other suitable manufacturing methods, to remove the First Line of part in wiring board 410 ' (being illustrated in Fig. 4 A)
Road floor 112 and partial 112 core layer 111 of first line floor, to form the wiring board 410 with wears groove 410c.
In the present embodiment, wears groove 410c can be connected with each other in structure logical with an at least via hole 114, but this
It invents without being limited thereto.In other embodiments, wears groove 410c can be separated from each other with via hole 114.
Then, the wiring board 410 with wears groove 410c is placed on carrier 10.In general, in order to reduce carrier 10
The damage or out-of-flatness of carrier surface 10a can be and be initially formed the wiring board 410 with wears groove 410c, then will have again and wear
The wiring board 410 of slot 410c is placed on carrier 10.
D and Fig. 4 E referring to figure 4., electronic component 120 is placed on carrier 10.
In the present embodiment, it can be and first wiring board 410 be placed on carrier 10, then electronic component 120 is placed in carrier
On 10, and it is embedded in electronic component 120 in the wears groove 410c of wiring board 410, however, the present invention is not limited thereto.In other embodiments
In, it can be and first electronic component 120 is placed on carrier 10, then wiring board 410 is placed on carrier 10, and by wiring board 410
Wears groove 410c be aligned electronic component 120 so that electronic component 120 is embedded in the wears groove 410c of wiring board 410.
In the present embodiment, wears groove 410c between multiple via holes 114 ', 114 " and with these via holes 114 ',
114 " can be connected with each other logical in structure, and electronic component 120 is located between these via holes 114 ', 114 ".Therefore, corresponding
It need to be electrically isolated from each other by wears groove 410c in the via hole 114 ', 114 " of multiple connection gaskets 121 of electronic component 120.
F referring to figure 4. is placed on carrier 10 by wiring board 410 and electronic component 120, and is embedded in electronic component 120
After in wears groove 410c, dielectric materials layer 130 is formed on carrier 10, and dielectric materials layer 130 is at least filled in wears groove
In 410c (being illustrated in Fig. 4 D).Dielectric materials layer 130 may include covering part 131.Covering part 131 is located at outside wears groove 410c and covers
It is placed on the second line layer 113.There is an at least dielectric openings 131a in covering part 131.Dielectric openings 131a can expose
The third of second line layer 113 is electrically connected face 113a.
G referring to figure 4. can spin upside down the structure of Fig. 4 F before or after removing carrier 10.Also, it is moving
After carrier 10, connection line layer 140 is formed.Connection line layer 140 covers and contacts the first electric connection face 112a and each
A second is electrically connected face 121a.Connection line layer 140 is electrically connected by corresponding via hole 114 and the second line layer 113.
H referring to figure 4. forms first in the first side 410a of wiring board 410 and is situated between after forming connection line layer 140
Electric layer 450.First dielectric layer 450 has at least one first dielectric openings 450a.First dielectric openings 450a exposes part
Connection line layer 140.
In the present embodiment, the second dielectric layer 460 can be formed in second side 410b of wiring board 410.Second dielectric layer
460 have at least one second dielectric openings 460a.Second dielectric openings 460a exposes the second line layer 113 of part.
In other embodiments, the first dielectric layer 450 and/or the second dielectric layer 460 can be dry film solder mask or liquid
Light sensitive anti-solder paint.
The production of the built-in type component structure 400 of the present embodiment can be substantially completed after above-mentioned manufacture.This implementation
The built-in type component structure 400 of example is similar with the built-in type component structure 100 of first embodiment, the difference is that: wiring board 410
Wears groove 410c can be connected in structure with an at least via hole 114.
Fig. 5 A to Fig. 5 F is cutd open according to a kind of manufacturing method of built-in type component structure of the fifth embodiment of the present invention
Face schematic diagram.Fig. 5 G is the upper schematic diagram according to a kind of built-in type component structure of the fifth embodiment of the present invention.
The manufacturing method of the built-in type component structure 500 of the present embodiment and the built-in type component structure 300 of 3rd embodiment
Manufacturing method it is similar, similar component is indicated with identical label, and has the function of similar, material or generation type,
And omit description.
A referring to figure 5., can by be similar to Figure 1A to Fig. 1 C the step of, wiring board 310 ' and electronic component 520 are set
In on carrier 10, and it is embedded in electronic component 520 in wears groove 110c.
In the present embodiment, the side of electronic component 520 can have multiple first connection gaskets 521, electronic component 520
Side can have the second connection gasket 522.It and is electrically connected with the second of each first connection gasket 521 of electronic component 520
The mode of carrier surface 10a of the face 521a towards carrier 10, electronic component 520 is placed on carrier 10.In the present embodiment, respectively
The second of a first connection gasket 521 be electrically connected face 521a can direct contact carrier 10 carrier surface 10a, but the present invention is not
It is limited to this.In other embodiments, if having adhesion coating (not shown) between electronic component 520 and carrier 10, each first
The second of connection gasket 521 is electrically connected face 521a can be with mediate contact carrier 10.With by vertical cavity surface-emitting laser (vertical
cavity surface emitting laser；VCSEL) crystal grain, light emitting diode (LED) crystal grain or other active members are made
For electronic component 520, thickness is about micron to millimeter grade.Therefore, compared to the thickness of electronic component 520, adhesion
The thickness of layer can be it is very thin, therefore general naked eyes visually, even if having between electronic component 520 and carrier 10 viscous
Layer, 520 contact carrier 10 of electronic component can also be considered as.
In the present embodiment, it can be and first wiring board 310 ' be placed on carrier 10, then electronic component 520 is placed in carrier
On 10, and it is embedded in electronic component 520 in the wears groove 110c of wiring board 310 ', however, the present invention is not limited thereto.In other implementations
In example, it can be and first electronic component 520 is placed on carrier 10, then wiring board 310 ' is placed on carrier 10, and by wiring board
310 ' wears groove 110c is directed at electronic component 520, so that electronic component 520 is embedded in the wears groove 110c of wiring board 310 '.
In the present embodiment, the thickness of wiring board 310 ' and the thickness of electronic component 520 can be the same or different, in
The present invention is not limited thereto.But it is noted that the sectional area of the wears groove 110c of wiring board 310 ' need to be greater than electronic component 520
Sectional area in these 521 sides of the first connection gasket, so that electronic component 520 is suitable for the wears groove 110c for being embedded in wiring board 310 '
It is interior, and it is exposed to the first connection gasket 521 of electronic component 520 outside wears groove 110c.
B referring to figure 5. is placed on carrier 10 by wiring board 310 ' and electronic component 520, and keeps electronic component 520 embedding
After entering in wears groove 110c (being illustrated in Fig. 5 A), the first dielectric materials layer 530 is formed on carrier 10, and the first dielectric material
Layer 530 is at least filled in wears groove 110c.First dielectric materials layer 530 may include covering part 531.Covering part 531, which is located at, wears
Slot 110c is outer and is covered on the second line layer 113.There is dielectric openings 531a in covering part 531.Dielectric openings 531a can be with
The third for exposing the second line layer 113 is electrically connected the second connection gasket 522 of face 113a and electronic component 520.
The material generation type of first dielectric materials layer 530 can be with the material of the dielectric materials layer 130 of previous embodiment
Generation type is same or similar, therefore will not be repeated here in this.
C referring to figure 5. removes carrier 10, after forming the first dielectric materials layer 530 to expose first line layer
The first of 112 is electrically connected face 112a and the second of each first connection gasket 521 and is electrically connected face 521a.Due to wiring board 310 '
It is all placed on carrier 10 with electronic component 520 and is contacted with carrier 10, therefore, the first of first line layer 112 is electrically connected
Face 112a is electrically connected face 521a with the second of each first connection gasket 521 substantially can be coplanar.
In the present embodiment, if 530 contact carrier 10 of the first dielectric materials layer being filled in wears groove 110c, first is situated between
The dielectric surface 530a of material layer 530, the first of first line layer 112 are electrically connected face 112a and each connection gasket 121
Second is electrically connected face 521a substantially can be coplanar.
In addition, the structure of Fig. 5 B can be spun upside down before or after removing carrier 10, in remove carrier 10 it
Afterwards, it may be constructed structure as shown in Figure 5 C.
Please continue to refer to Fig. 5 C, after removing carrier 10, the second dielectric is formed in the 310 ' a of the first side of wiring board 310 '
Material layer 535.Second dielectric materials layer 535 has dielectric openings 535a.Dielectric openings 535a can expose the first dielectric material
The dielectric surface 530a of the bed of material 530, the first of first line layer 112 are electrically connected face 112a and each first connection gasket 521
Second is electrically connected face 521a.
The material generation type of second dielectric materials layer 535 can be with the material generation type of the first dielectric materials layer 530
It is same or similar, therefore will not be repeated here in this.
D referring to figure 5. can be by etching, grinding drilling, laser drill after forming the second dielectric materials layer 535
Or other suitable manufacturing methods, in forming an at least perforation 310e on wiring board 310 ' (being illustrated in Fig. 5 C).Perforation 310e is passed through
Wear core layer 111, first line layer 112 and the second line layer 113.
In the present embodiment, since electronic component 520 has been inserted into the wears groove 110c of wiring board 310 ', and it is filled in wears groove
Dielectric materials layer 530 in 110c can be fixed by the electronic component 520 in wears groove 110c, and provides electronic component 520 and line
There is good buffering between road plate 310 '.Therefore, during forming perforation 310e, electronic component 520 or wiring board
310 ' may be influenced (such as: grinding vibration when drilling and make to generate between electronic component 520 or wiring board 310 ' by stress
Stress), but still the offset of electronic component 520 can be reduced.
E referring to figure 5. forms connection line layer 140 after forming perforation 310e (being illustrated in Fig. 5 D).Also, pass through
Similar to the forming method of connection line layer 140, conductive material is inserted in Yu Guankong 310e, to form via hole 114.Such one
Come, may be constructed the wiring board 310 with core layer 111, first line layer 112, the second line layer 113 and via hole 314.
It in the present embodiment, can be in formation line layer 590 on the second line layer 113 and/or the second connection gasket 522.Line
The generation type of road floor 590 can be similar to connection line floor 140, therefore will not be repeated here in this.In addition, being used to form line layer
590 conductive material can be filled in the dielectric openings 531a of the second dielectric materials layer 535, so that line layer 590 can be with
Two line layers 113 and/or via hole 314 are electrically connected.
F and 5G referring to figure 5., after forming connection line layer 140 and via hole 314, in the first side of wiring board 310
310a forms the first dielectric layer 350.First dielectric layer 350 has at least one first dielectric openings 350a.First dielectric openings
350a exposes the connection line layer 140 and/or partial via hole 314 of part.
In the present embodiment, the second dielectric layer 360 can be formed in second side 310b of wiring board 310.Second dielectric layer
360 have at least one second dielectric openings 360a.Second dielectric openings 360a expose part the second line layer 113 and/or
Partial via hole 314.
For in structure, the built-in type component structure 500 of the present embodiment and the built-in type component structure of 3rd embodiment
300 is similar, main difference is that: the connection gasket 521,522 of electronic component 520 has different configuration modes.
Fig. 6 is the diagrammatic cross-section according to a kind of built-in type component structure of the sixth embodiment of the present invention.
The built-in type component structure 600 of the present embodiment is similar to the built-in type component structure 500 of the 5th embodiment, similar
Component indicate and there is similar, material or generation type, and omit description with identical label.With regard to coming in structure
It says, the built-in type component structure 600 of the present embodiment is similar to the built-in type component structure 500 of the 5th embodiment, and essential difference exists
In: the first dielectric layer 650 has the first dielectric openings 650a for exposing electronic component 520.
Fig. 7 is the diagrammatic cross-section according to a kind of built-in type component structure of the seventh embodiment of the present invention.
The built-in type component structure of the present embodiment and the built-in type component structure 600 of sixth embodiment are similar, similar
Component is indicated with identical label, and has the function of similar, material or generation type, and omits description.For in structure,
The built-in type component structure 700 of the present embodiment and the built-in type component structure 600 of sixth embodiment are similar, main difference is that:
In the built-in type component structure 700 of the present embodiment, the wears groove 410c (being illustrated in Fig. 4 B) of wiring board 410 can be led at least one
Through-hole 114 can be connected with each other logical in structure.For example, it can be worn by the manufacturing method of such as Fig. 4 A to Fig. 4 C, formation
The wiring board 410 that slot 410c and via hole 114 can be connected with each other logical in structure.
In conclusion in built-in type component structure of the present invention, by connection line layer directly by electronic component and route
Plate is electrically connected, and can need not form or omit the via hole between electronic component and wiring board.Therefore, built-in type element knot
The manufacturing method of structure can be relatively simple, and thickness can be relatively thin.In addition, by connection line layer can reduce electronic component with
Line length between wiring board, and then signal transmission time can be reduced, and then the biography between different electronic components can be promoted
Defeated rate.
Although the present invention is disclosed as above with embodiment, however, it is not to limit the invention, any technical field
In technical staff, without departing from the spirit and scope of the present invention, when can make a little change and retouching, therefore guarantor of the invention
Subject to shield range ought be defined depending on claim.
Claims (22)
1. a kind of built-in type component structure, comprising:
Wiring board has wears groove, and the wiring board includes:
Core layer；
First line layer；
Second line layer is located at the opposite sides of the core layer with the first line layer, and the wears groove is at least passed through
Wear the first line layer and the core layer；And
An at least via hole runs through the core layer, to be electrically connected the first line layer and second line layer；
Electronic component is set in the wears groove, wherein the electronic package includes the multiple connections being exposed to outside the wears groove
Pad, and the first electric connection face of the first line layer and the second electric connection face of each the multiple connection gasket are coplanar；
Dielectric materials layer is at least filled in the wears groove；And
Connection line layer covers and contacts the first electric connection face and each second electric connection face, and the multiple
Connection gasket is electrically connected to the first line layer by the connection line layer.
2. built-in type component structure according to claim 1, wherein the dielectric materials layer be further filled in it is each described
Between multiple connection gaskets and the first line layer, and has and be electrically connected the coplanar dielectric surface in face, institute with described first
It states connection line layer and covers and contact the first electric connection face, the dielectric surface and the second electric connection face.
3. built-in type component structure according to claim 2, wherein in the section for being electrically connected face perpendicular to described first
On, the connection line layer is electrically connected on face, the dielectric surface and the second electric connection face described first
Section thickness is consistent.
4. built-in type component structure according to claim 1, wherein the sectional area of the wears groove is greater than the electronic component
In the surface area that described second is electrically connected face.
5. built-in type component structure according to claim 1, further includes:
First dielectric layer is set to the same side of the core layer with the first line layer, covers the first line layer
At least partly at least partly with the connection line layer, and first dielectric layer have expose the first line layer or
At least one opening of the connection line layer.
6. built-in type component structure according to claim 5, wherein the composition material of first dielectric layer includes anti-welding
Material.
7. built-in type component structure according to claim 1 is located at outside the wears groove wherein the dielectric materials layer has
Covering part, cover the side in the core layer where second line layer, and cover second line layer at least
Part.
8. built-in type component structure according to claim 7, wherein the covering part of the dielectric materials layer has cruelly
Expose an at least dielectric openings for second line layer or the via hole.
9. built-in type component structure according to claim 7, further includes:
Second dielectric layer covers the covering part of the dielectric materials layer, and second dielectric layer is described with exposing
At least one opening of the second line layer or the via hole.
10. built-in type component structure according to claim 9, wherein the composition material of second dielectric layer includes anti-welding
Material.
11. built-in type component structure according to claim 1, wherein the wears groove is connected with an at least via hole
It is logical.
12. a kind of manufacturing method of built-in type component structure, comprising:
Carrier is provided；
Wiring board is placed on the carrier, the wiring board has wears groove, and the wiring board includes:
Core layer；
First line layer, and the first line layer contacts the carrier；And
Second line layer is located at the opposite sides of the core layer with the first line layer, and the wears groove is at least passed through
Wear the first line layer and the core layer；
Electronic component is placed on the carrier, the electronic component has multiple connection gaskets, wherein the multiple connection gasket connects
Touch the carrier；
It is placed on the carrier by the wiring board and the electronic component, and the electronic component is made to be embedded in the wears groove
After interior, dielectric materials layer is formed on the carrier, and the dielectric materials layer is at least filled in the wears groove；
The carrier is removed, to expose the first line layer and the multiple connection gasket, and the first line layer
First electric connection face and the second electric connection face of each the multiple connection gasket are coplanar；
After removing the carrier, connection line layer is formed, and the connection line layer covers and contacts described first and electrically connects
Junction and each described second is electrically connected face.
13. the manufacturing method of built-in type component structure according to claim 12, wherein the wiring board further include:
An at least via hole runs through the core layer, to be electrically connected the first line layer and second line layer.
14. the manufacturing method of built-in type component structure according to claim 13, wherein the wears groove and described at least one
Via hole is connected with each other logical.
15. the manufacturing method of built-in type component structure according to claim 12, further includes:
It is formed after the connection line layer, forms the first dielectric layer, first dielectric layer covers the first line layer
At least partly at least partly with the connection line layer.
16. the manufacturing method of built-in type component structure according to claim 15, wherein the composition of first dielectric layer
Material includes anti-welding material.
17. the manufacturing method of built-in type component structure according to claim 12, further includes:
Formed after the dielectric materials layer, on Yu Suoshu wiring board formed through the core layer, the first line layer with
An and at least perforation for second line layer；And
In inserting conductive material in an at least perforation, to constitute at least via hole for running through the core layer, with electrical property
Connect the first line layer and second line layer.
18. the manufacturing method of built-in type component structure according to claim 12, wherein the dielectric materials layer has position
Covering part outside the wears groove covers the side in the core layer where second line layer, and covers described second
Line layer is at least partly.
19. the manufacturing method of built-in type component structure according to claim 18, further includes:
In forming an at least dielectric openings in the covering part of the dielectric materials layer, and at least dielectric openings exposure
Second line layer out.
20. the manufacturing method of built-in type component structure according to claim 18, further includes:
The second dielectric layer is formed, the covering part of the dielectric materials layer is covered.
21. the manufacturing method of built-in type component structure according to claim 20, further includes:
It is open in forming at least one second on second dielectric layer, and at least one second opening exposes second line
Road floor.
22. the manufacturing method of built-in type component structure according to claim 20, wherein the composition of second dielectric layer
Material includes anti-welding material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111495773.8A CN114286514A (en) | 2018-03-20 | 2018-07-27 | Embedded element structure and manufacturing method thereof |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862645784P | 2018-03-20 | 2018-03-20 | |
| US62/645,784 | 2018-03-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111495773.8A Division CN114286514A (en) | 2018-03-20 | 2018-07-27 | Embedded element structure and manufacturing method thereof |
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| CN110310937A true CN110310937A (en) | 2019-10-08 |
| CN110310937B CN110310937B (en) | 2022-08-16 |
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| CN201810842418.5A Active CN110310937B (en) | 2018-03-20 | 2018-07-27 | Embedded element structure and manufacturing method thereof |
| CN202111495773.8A Withdrawn CN114286514A (en) | 2018-03-20 | 2018-07-27 | Embedded element structure and manufacturing method thereof |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111495773.8A Withdrawn CN114286514A (en) | 2018-03-20 | 2018-07-27 | Embedded element structure and manufacturing method thereof |
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| Country | Link |
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| CN (2) | CN110310937B (en) |
| TW (1) | TWI672079B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112188731A (en) * | 2019-07-02 | 2021-01-05 | 欣兴电子股份有限公司 | Embedded element structure and manufacturing method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI715261B (en) * | 2019-10-23 | 2021-01-01 | 強茂股份有限公司 | Chip size packaging structure and manufacturing method thereof |
| US11049781B1 (en) | 2020-02-13 | 2021-06-29 | Panjit International Inc. | Chip-scale package device |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN110310937B (en) | 2022-08-16 |
| TWI672079B (en) | 2019-09-11 |
| CN114286514A (en) | 2022-04-05 |
| TW201941672A (en) | 2019-10-16 |
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