CN110235258B - 光电子半导体芯片 - Google Patents

光电子半导体芯片 Download PDF

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Publication number
CN110235258B
CN110235258B CN201880008951.XA CN201880008951A CN110235258B CN 110235258 B CN110235258 B CN 110235258B CN 201880008951 A CN201880008951 A CN 201880008951A CN 110235258 B CN110235258 B CN 110235258B
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CN
China
Prior art keywords
layer
type
semiconductor chip
current spreading
optoelectronic semiconductor
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CN201880008951.XA
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English (en)
Chinese (zh)
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CN110235258A (zh
Inventor
王雪
马库斯·布勒尔
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of CN110235258A publication Critical patent/CN110235258A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/305—Materials of the light emitting region containing only elements of group III and group V of the periodic system characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/041—Making n- or p-doped regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
CN201880008951.XA 2017-01-27 2018-01-23 光电子半导体芯片 Active CN110235258B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017101637.6 2017-01-27
DE102017101637.6A DE102017101637A1 (de) 2017-01-27 2017-01-27 Optoelektronischer Halbleiterchip
PCT/EP2018/051572 WO2018138081A1 (de) 2017-01-27 2018-01-23 Optoelektronischer halbleiterchip

Publications (2)

Publication Number Publication Date
CN110235258A CN110235258A (zh) 2019-09-13
CN110235258B true CN110235258B (zh) 2023-02-28

Family

ID=61024776

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880008951.XA Active CN110235258B (zh) 2017-01-27 2018-01-23 光电子半导体芯片

Country Status (5)

Country Link
US (1) US11502222B2 (ja)
JP (1) JP6924836B2 (ja)
CN (1) CN110235258B (ja)
DE (2) DE102017101637A1 (ja)
WO (1) WO2018138081A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017104719A1 (de) * 2017-03-07 2018-09-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper und Halbleiterchip
DE102017123542A1 (de) 2017-10-10 2019-04-11 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
US11799058B2 (en) 2018-03-15 2023-10-24 Osram Oled Gmbh Optoelectronic semiconductor chip
DE102018107667A1 (de) 2018-03-15 2019-09-19 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip
DE102019126026A1 (de) * 2019-09-26 2021-04-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterchip

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6350997B1 (en) * 1998-04-23 2002-02-26 Kabushiki Kaisha Toshiba Semiconductor light emitting element
JP2014103242A (ja) * 2012-11-20 2014-06-05 Stanley Electric Co Ltd 半導体発光素子
EP2903027A1 (de) * 2014-01-30 2015-08-05 AZUR SPACE Solar Power GmbH LED-Halbleiterbauelement
CN105280771A (zh) * 2014-05-30 2016-01-27 Lg伊诺特有限公司 发光器件

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3881470B2 (ja) 1999-01-05 2007-02-14 ローム株式会社 半導体発光素子の製法
JP4039187B2 (ja) 2002-09-06 2008-01-30 日立電線株式会社 半導体発光素子
JP4601950B2 (ja) * 2003-12-26 2010-12-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
TWI285970B (en) * 2005-08-26 2007-08-21 Arima Optoelectronics Corp Window interface layer structure of LED
JP4367393B2 (ja) * 2005-09-30 2009-11-18 日立電線株式会社 透明導電膜を備えた半導体発光素子
JP5408487B2 (ja) 2009-08-07 2014-02-05 ソニー株式会社 半導体発光素子
DE102010014667A1 (de) 2010-04-12 2011-10-13 Osram Opto Semiconductors Gmbh Leuchtdiodenchip mit Stromaufweitungsschicht
JP2012104677A (ja) 2010-11-11 2012-05-31 Toshiba Corp 半導体発光素子の製造方法
JP5095848B1 (ja) * 2011-05-18 2012-12-12 株式会社東芝 半導体発光素子
JP6077201B2 (ja) * 2011-08-11 2017-02-08 昭和電工株式会社 発光ダイオードおよびその製造方法
US20130049034A1 (en) 2011-08-31 2013-02-28 Yi Chieh Lin Light-emitting device
JP2013243202A (ja) 2012-05-18 2013-12-05 Stanley Electric Co Ltd 半導体発光素子の製造方法
JP6321919B2 (ja) 2013-04-30 2018-05-09 ローム株式会社 半導体発光素子
US9419181B2 (en) 2013-05-13 2016-08-16 Infineon Technologies Dresden Gmbh Electrode, an electronic device, and a method for manufacturing an optoelectronic device
US9787061B2 (en) * 2013-11-19 2017-10-10 Sony Corporation Semiconductor laser element
EP3142157B1 (en) * 2014-05-08 2020-03-25 LG Innotek Co., Ltd. Light emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6350997B1 (en) * 1998-04-23 2002-02-26 Kabushiki Kaisha Toshiba Semiconductor light emitting element
JP2014103242A (ja) * 2012-11-20 2014-06-05 Stanley Electric Co Ltd 半導体発光素子
EP2903027A1 (de) * 2014-01-30 2015-08-05 AZUR SPACE Solar Power GmbH LED-Halbleiterbauelement
CN105280771A (zh) * 2014-05-30 2016-01-27 Lg伊诺特有限公司 发光器件

Also Published As

Publication number Publication date
JP6924836B2 (ja) 2021-08-25
CN110235258A (zh) 2019-09-13
JP2020506536A (ja) 2020-02-27
US11502222B2 (en) 2022-11-15
US20190386174A1 (en) 2019-12-19
DE112018000553B4 (de) 2023-12-14
DE112018000553A5 (de) 2019-10-10
WO2018138081A1 (de) 2018-08-02
DE102017101637A1 (de) 2018-08-02

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