CN110214371A - 包括石墨烯的半导体功率模块 - Google Patents
包括石墨烯的半导体功率模块 Download PDFInfo
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- CN110214371A CN110214371A CN201780084256.7A CN201780084256A CN110214371A CN 110214371 A CN110214371 A CN 110214371A CN 201780084256 A CN201780084256 A CN 201780084256A CN 110214371 A CN110214371 A CN 110214371A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L2224/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (15)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210862542.4A CN115241142A (zh) | 2017-01-23 | 2017-12-13 | 包括石墨烯的半导体功率模块 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP17152714.6 | 2017-01-23 | ||
EP17152714.6A EP3352213B1 (en) | 2017-01-23 | 2017-01-23 | Semiconductor power module comprising graphene |
PCT/EP2017/082661 WO2018134002A1 (en) | 2017-01-23 | 2017-12-13 | Semiconductor power module comprising graphene |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210862542.4A Division CN115241142A (zh) | 2017-01-23 | 2017-12-13 | 包括石墨烯的半导体功率模块 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110214371A true CN110214371A (zh) | 2019-09-06 |
Family
ID=57868178
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780084256.7A Pending CN110214371A (zh) | 2017-01-23 | 2017-12-13 | 包括石墨烯的半导体功率模块 |
CN202210862542.4A Pending CN115241142A (zh) | 2017-01-23 | 2017-12-13 | 包括石墨烯的半导体功率模块 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210862542.4A Pending CN115241142A (zh) | 2017-01-23 | 2017-12-13 | 包括石墨烯的半导体功率模块 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10804182B2 (zh) |
EP (1) | EP3352213B1 (zh) |
JP (1) | JP6686236B1 (zh) |
CN (2) | CN110214371A (zh) |
WO (1) | WO2018134002A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112992795A (zh) * | 2019-12-17 | 2021-06-18 | 株洲中车时代半导体有限公司 | 压接式igbt子模组结构和压接式igbt器件 |
CN112992866A (zh) * | 2019-12-18 | 2021-06-18 | 株洲中车时代半导体有限公司 | 一种电流旁路结构及igbt器件 |
CN113053831A (zh) * | 2019-12-27 | 2021-06-29 | 株洲中车时代半导体有限公司 | 一种压接式igbt模块及功率半导体器件 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3577687B1 (en) * | 2017-02-01 | 2020-10-07 | ABB Power Grids Switzerland AG | Power semiconductor device with active short circuit failure mode and method of controlling the same |
EP3566246B1 (en) * | 2017-02-01 | 2020-11-18 | ABB Power Grids Switzerland AG | Power semiconductor module with short circuit failure mode |
KR102496483B1 (ko) * | 2017-11-23 | 2023-02-06 | 삼성전자주식회사 | 아발란치 광검출기 및 이를 포함하는 이미지 센서 |
CN113169154B (zh) | 2018-12-07 | 2024-03-22 | 日立能源有限公司 | 用于功率半导体器件的混合短路故障模式预型件 |
CN112968007B (zh) * | 2021-02-03 | 2023-03-24 | 重庆大学 | 功率半导体结构及断路器转移支路组件 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102867793A (zh) * | 2012-08-14 | 2013-01-09 | 日月光半导体制造股份有限公司 | 热界面材料及半导体封装结构 |
WO2013020106A1 (en) * | 2011-08-03 | 2013-02-07 | Anchor Science Llc | Dynamic thermal interface material |
CN103107147A (zh) * | 2012-04-06 | 2013-05-15 | 北京中石伟业科技股份有限公司 | 一种表面覆有石墨烯薄膜的散热器 |
CN103346225A (zh) * | 2013-06-21 | 2013-10-09 | 杭州格蓝丰纳米科技有限公司 | 垂直型石墨烯led芯片 |
CN103370786A (zh) * | 2011-02-08 | 2013-10-23 | Abb研究有限公司 | 功率半导体模块 |
CN103625029A (zh) * | 2013-11-25 | 2014-03-12 | 许子寒 | 一种石墨烯导热器件 |
CN104813751A (zh) * | 2012-09-25 | 2015-07-29 | 莫门蒂夫性能材料股份有限公司 | 包括块状石墨烯材料的热管理组件 |
US9605193B2 (en) * | 2012-10-19 | 2017-03-28 | The Hong Kong University Of Science And Technology | Three dimensional interconnected porous graphene-based thermal interface materials |
Family Cites Families (6)
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DE19843309A1 (de) | 1998-09-22 | 2000-03-23 | Asea Brown Boveri | Kurzschlussfestes IGBT Modul |
EP1246242A1 (de) * | 2001-03-26 | 2002-10-02 | Abb Research Ltd. | Kurzschlussfestes IGBT Modul |
EP1403923A1 (en) | 2002-09-27 | 2004-03-31 | Abb Research Ltd. | Press pack power semiconductor module |
EP2544229A1 (en) | 2011-07-07 | 2013-01-09 | ABB Research Ltd. | Power semiconductor arrangement |
KR20140058969A (ko) * | 2012-11-07 | 2014-05-15 | 한국전자통신연구원 | 발광 다이오드 및 그 제조 방법 |
US9099567B2 (en) | 2013-11-25 | 2015-08-04 | Freescale Semiconductor, Inc. | Packaged semiconductor devices and methods of their fabrication |
-
2017
- 2017-01-23 EP EP17152714.6A patent/EP3352213B1/en active Active
- 2017-12-13 US US16/478,362 patent/US10804182B2/en active Active
- 2017-12-13 WO PCT/EP2017/082661 patent/WO2018134002A1/en active Application Filing
- 2017-12-13 CN CN201780084256.7A patent/CN110214371A/zh active Pending
- 2017-12-13 JP JP2019539179A patent/JP6686236B1/ja active Active
- 2017-12-13 CN CN202210862542.4A patent/CN115241142A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103370786A (zh) * | 2011-02-08 | 2013-10-23 | Abb研究有限公司 | 功率半导体模块 |
WO2013020106A1 (en) * | 2011-08-03 | 2013-02-07 | Anchor Science Llc | Dynamic thermal interface material |
CN103107147A (zh) * | 2012-04-06 | 2013-05-15 | 北京中石伟业科技股份有限公司 | 一种表面覆有石墨烯薄膜的散热器 |
CN102867793A (zh) * | 2012-08-14 | 2013-01-09 | 日月光半导体制造股份有限公司 | 热界面材料及半导体封装结构 |
CN104813751A (zh) * | 2012-09-25 | 2015-07-29 | 莫门蒂夫性能材料股份有限公司 | 包括块状石墨烯材料的热管理组件 |
US9605193B2 (en) * | 2012-10-19 | 2017-03-28 | The Hong Kong University Of Science And Technology | Three dimensional interconnected porous graphene-based thermal interface materials |
CN103346225A (zh) * | 2013-06-21 | 2013-10-09 | 杭州格蓝丰纳米科技有限公司 | 垂直型石墨烯led芯片 |
CN103625029A (zh) * | 2013-11-25 | 2014-03-12 | 许子寒 | 一种石墨烯导热器件 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112992795A (zh) * | 2019-12-17 | 2021-06-18 | 株洲中车时代半导体有限公司 | 压接式igbt子模组结构和压接式igbt器件 |
CN112992795B (zh) * | 2019-12-17 | 2024-04-19 | 株洲中车时代半导体有限公司 | 压接式igbt子模组结构和压接式igbt器件 |
CN112992866A (zh) * | 2019-12-18 | 2021-06-18 | 株洲中车时代半导体有限公司 | 一种电流旁路结构及igbt器件 |
CN113053831A (zh) * | 2019-12-27 | 2021-06-29 | 株洲中车时代半导体有限公司 | 一种压接式igbt模块及功率半导体器件 |
CN113053831B (zh) * | 2019-12-27 | 2023-09-05 | 株洲中车时代半导体有限公司 | 一种压接式igbt模块及功率半导体器件 |
Also Published As
Publication number | Publication date |
---|---|
EP3352213B1 (en) | 2021-10-06 |
JP6686236B1 (ja) | 2020-04-22 |
US20190333838A1 (en) | 2019-10-31 |
EP3352213A1 (en) | 2018-07-25 |
JP2020515049A (ja) | 2020-05-21 |
CN115241142A (zh) | 2022-10-25 |
US10804182B2 (en) | 2020-10-13 |
WO2018134002A1 (en) | 2018-07-26 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20210601 Address after: Baden, Switzerland Applicant after: ABB grid Switzerland AG Address before: Baden, Switzerland Applicant before: ABB Switzerland Co.,Ltd. |
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TA01 | Transfer of patent application right | ||
CB02 | Change of applicant information |
Address after: Swiss Baden Applicant after: Hitachi energy Switzerland AG Address before: Swiss Baden Applicant before: ABB grid Switzerland AG |
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RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190906 |
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RJ01 | Rejection of invention patent application after publication |