CN110198028B - Electrostatic protection circuit - Google Patents
Electrostatic protection circuit Download PDFInfo
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- CN110198028B CN110198028B CN201910391825.3A CN201910391825A CN110198028B CN 110198028 B CN110198028 B CN 110198028B CN 201910391825 A CN201910391825 A CN 201910391825A CN 110198028 B CN110198028 B CN 110198028B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
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Abstract
The invention provides an electrostatic protection circuit, which comprises a first diode, a second diode and a protection switch, wherein the first diode is connected with a low-voltage unit, the second diode is connected with a high-voltage unit, and an electrostatic generation unit is connected with the first diode and the second diode through the protection switch; when the voltage of the static electricity generating unit is within a preset voltage range, the protection switch is in a disconnected state, and the static electricity generating unit is isolated from the low-voltage unit and the high-voltage unit so as to prevent electric leakage; when the voltage of the static electricity generating unit exceeds a preset voltage, the protection switch is in a conducting state, and the static electricity of the static electricity generating unit is dispersed to the low-voltage unit or the high-voltage unit so as to eliminate the static electricity.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to an electrostatic protection circuit.
Background
With the development of integrated circuits and semiconductor display industry, the damage caused by Electro-static Discharge (ESD) in the circuits is increasing, and how to perform effective ESD protection has become an important issue considered by various manufacturers.
At present, the method for solving the electrostatic problem in the integrated circuit mainly leads out the static electricity through the electrostatic protection circuit, and the following two circuit forms are common:
one is that: the electrostatic protection circuit shown in fig. 1 includes a first diode 11 and a second diode 12, an input terminal of the first diode 11 is connected to a low voltage power supply unit 14, an output terminal of the second diode 12 is connected to a high voltage power supply unit 15, an output terminal of the first diode 11 is connected to an input terminal of the second diode 12, and an electrostatic generating unit 16 to be subjected to electrostatic protection is connected to a node P between the first diode 11 and the second diode 12; the normal operating voltage of the static electricity generating unit 16 is between the voltage provided by the low voltage power supply unit 14 and the voltage provided by the high voltage power supply unit 15; when the voltage of the static electricity generating unit 16 is a normal operating voltage, under the action of the unidirectional conduction of the first diode 11 and the second diode 12, no charge transfer exists between the static electricity generating unit 16 and the low-voltage power supply unit 14 and the high-voltage power supply unit 15; when the voltage of the static electricity generating unit 16 is higher or lower than the normal operating voltage due to the accumulation of static electricity, the static electricity accumulated by the static electricity generating unit 16 is transferred to the high voltage power supply unit 15 or the low voltage power supply unit 14 by the unidirectional conduction of the first diode 11 and the second diode 12. Such an electrostatic protection circuit has a good electrostatic protection effect, but the operating voltage of the electrostatic generating unit 16 is strictly limited between the voltages provided by the low voltage power supply unit 14 and the high voltage power supply unit 15, and when the normal fluctuation of the operating voltage of the electrostatic generating unit 15 is lower than the voltage provided by the low voltage power supply unit 14 or higher than the voltage provided by the high voltage power supply unit 15, the operating voltage of the electrostatic generating unit 15 may leak to the low voltage power supply unit 14 or the high voltage power supply unit 15, i.e., a leakage phenomenon.
The other is as follows: as shown in fig. 2, the esd protection circuit is composed of two capacitors and a transistor, the static electricity generated by the static electricity generating unit 26 is dispersed to the esd terminal 25 through the transistor T, and the gate of the transistor T is connected to the static electricity generating unit 26 and the esd terminal 25 through the first capacitor C1 and the second capacitor C2, respectively; when the voltage of the static electricity generating unit 26 exceeds a preset value, the first capacitor C1 or the second capacitor C2 is charged, so that the gate of the transistor T reaches a threshold voltage, the transistor T is turned on, and static electricity generated by the static electricity generating unit 26 is dispersed to the static electricity eliminating terminal 25. The electrostatic protection circuit has two capacitors, so that the whole circuit occupies a large space, which is not favorable for the small-size design of the integrated circuit.
In summary, the two types of electrostatic discharge protection circuits in the prior art have the problems of electric leakage and large occupied space respectively. Therefore, a new electrostatic protection circuit is needed to overcome the above drawbacks.
Disclosure of Invention
Based on the above-mentioned defects of the prior art, the present invention provides an electrostatic protection circuit, which has a good electrostatic protection effect, effectively solves the problems of electric leakage and large occupied space, and is suitable for being applied to an integrated circuit.
The invention provides an electrostatic protection circuit, comprising:
the first diode has a one-way conduction function, and the input end of the first diode is connected with the low-voltage unit;
the second diode has a one-way conduction function, the input end of the second diode is connected with the output end of the first diode, and the output end of the second diode is connected with the high-voltage unit; and
the protection switch has a switching-on and switching-off function, one end of the protection switch is connected with the static electricity generation unit, and the other end of the protection switch is connected with a node between the first diode and the second diode; wherein the content of the first and second substances,
the static electricity of the static electricity generating unit is discharged to the low voltage unit or the high voltage unit through the protection switch.
According to an embodiment of the present invention, a normal operating voltage of the static electricity generating unit is a preset voltage, and the preset voltage is between a voltage provided by the low voltage unit and a voltage provided by the high voltage unit.
According to an embodiment of the present invention, a normal operating voltage of the static electricity generating unit is a preset voltage, a minimum voltage value of the preset voltage is smaller than a voltage value provided by the low voltage unit, and a maximum voltage value of the preset voltage is larger than a voltage value provided by the high voltage unit.
According to an embodiment of the present invention, characterized in that,
when the voltage of the static electricity generating unit is lower than the preset voltage, a passage is formed between the low-voltage unit and the static electricity generating unit;
when the voltage of the static electricity generating unit is higher than the preset voltage, a path is formed between the static electricity generating unit and the high-voltage unit.
According to an embodiment of the present invention, the protection switch controls on and off between the static electricity generating unit and the node by a voltage of the static electricity generating unit.
According to an embodiment of the present invention, the protection switch includes a transistor, a first resistor, and a second resistor;
the first resistor is connected between the grid electrode of the transistor and the drain electrode of the transistor through a first lead;
the second resistor is connected between the grid electrode of the transistor and the source electrode of the transistor through a second conducting wire;
a source of the transistor is connected to the first node;
the drain electrode of the transistor is connected with the static electricity generating unit;
when the voltage of the static electricity generating unit is higher than or lower than the preset voltage, the grid electrode of the transistor controls the source electrode of the transistor to be conducted with the drain electrode of the transistor, and the static electricity generated by the static electricity generating unit is released to the high-voltage unit or the low-voltage unit.
According to an embodiment of the present invention, the gate voltage of the transistor controls the source of the transistor and the drain of the transistor to be turned on or off.
According to an embodiment of the invention, the electrostatic discharge protection circuit is applied to an integrated circuit.
The invention has the beneficial effects that: the electrostatic protection circuit provided by the invention is provided with a first diode, a second diode and a protection switch, wherein the protection switch controls the connection or disconnection of an electrostatic generation unit and the first diode or the second diode; when the voltage of the static electricity generating unit is within a preset voltage range, the protection switch is in a disconnected state, and electric leakage is prevented; when the voltage of the static electricity generating unit exceeds a preset voltage range, the protection switch is in a conducting state, and static electricity is released; meanwhile, the electrostatic protection circuit provided by the invention has the advantage of small occupied space.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the invention, and it is obvious for a person skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a prior art ESD protection circuit;
FIG. 2 is a circuit diagram of another prior art electrostatic protection circuit;
fig. 3 is a schematic diagram of an esd protection circuit according to an embodiment of the invention.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings that illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], are only referring to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention. In the drawings, elements having similar structures are denoted by the same reference numerals.
The embodiment of the invention provides an electrostatic protection circuit, which comprises a first diode, a second diode and a protection switch; when the static electricity generating unit is in a normal working voltage, the protection switch is in an off state, so that the static electricity generating unit is isolated from the first diode and the second diode to prevent electric leakage; when the voltage of the static electricity generating unit exceeds the normal working voltage, the protection switch enables the static electricity generating unit to be communicated with the first diode or the second diode, and static electricity generated by the static electricity generating unit is released through the first diode or the second diode, so that the purpose of eliminating the static electricity is achieved.
The electrostatic protection circuit provided by the embodiment of the invention is specifically described below with reference to the accompanying drawings:
fig. 3 is a schematic diagram of an esd protection circuit according to an embodiment of the present invention, where the esd protection circuit includes a first diode 31, a second diode 32, and a protection switch 33; wherein the content of the first and second substances,
the output end of the first diode 31 is connected with the input end of the second diode 32, the input end of the first diode 31 is connected with the low-voltage unit 34, and the output end of the second diode 32 is connected with the high-voltage unit 35; the first diode 31 and the second diode 32 have a unidirectional conduction characteristic, that is, current can only flow from the low voltage unit 34 to the first diode 31, and from the second diode 32 to the high voltage unit 35, and otherwise, the current is not conducted;
one end of the protection switch 33 is connected to the static electricity generating unit 36, and the other end of the protection switch 33 is connected to a node P between the first diode 31 and the second diode 32;
it should be noted that the static electricity generating unit 36 may be a circuit that needs to perform static electricity protection, such as a driving circuit or an induction circuit; the static electricity generating unit 36 may generate accumulation of static electricity during normal operation, and when the static electricity is accumulated to a certain degree, the working voltage of the static electricity generating unit 36 may be affected, for example, the normal working voltage of the static electricity generating unit 36 is-5V to +5V, and when the static electricity generating unit 36 accumulates a certain amount of positive charges, the voltage of the static electricity generating unit 36 is greater than +5V and exceeds the normal working voltage, so as to cause circuit abnormality; similarly, when the static charge generating terminal 36 accumulates a certain amount of negative charge, the voltage of the static electricity generating unit 36 will be lower than-5V, which also causes circuit abnormality.
When the static electricity generating unit 36 generates static electricity, the static electricity generating unit 36 discharges the static electricity to the low voltage unit 34 or the high voltage unit 35 through the protection switch 33, so that the voltage of the static electricity generating unit 36 is restored to the normal operating voltage.
It should be noted that, when the static electricity generating unit 36 is at the normal operating voltage, the protection switch 33 is in the off state, and no path is formed between the static electricity generating unit 36 and the first diode 31 or the second diode 32, so as to prevent the normal operating current of the static electricity generating unit 36 from leaking to the low voltage unit 34 or the high voltage unit 35, that is, a leakage occurs; when the voltage of the static electricity generating unit 36 exceeds the normal operating voltage, the protection switch 33 is in a conducting state, and the static electricity generating unit 36 discharges charges to the low voltage unit 34 or the high voltage unit 35 through the protection switch 33 to eliminate static electricity.
The preset voltage range of the electrostatic protection circuit provided by the embodiment of the invention mainly has two conditions, and the two conditions are described in the following two embodiments:
the first embodiment:
the normal operating voltage of the static electricity generating unit 36 is a preset voltage, which is between the voltage provided by the low voltage unit 34 and the voltage provided by the high voltage unit 35, for example, when the voltage provided by the low voltage unit 34 is-5V and the voltage provided by the high voltage unit 35 is +5V, the preset voltage is a voltage value between-5V and +5V (including-5V and + 5V);
when the voltage of the static electricity generating unit 36 is lower than the preset voltage due to the accumulation of negative charges, a path is formed between the low voltage unit 34 and the static electricity generating unit 36, and current flows from the low voltage unit 34 to the static electricity generating unit 36 through the first diode 31 and the protection switch 33, so as to eliminate the negative charges accumulated on the static electricity generating unit 36;
when the voltage of the static electricity generating unit 36 is higher than the predetermined voltage due to the accumulation of positive charges, a path is formed between the static electricity generating unit 36 and the high voltage unit 35, and a current flows from the static electricity generating unit 36 to the high voltage unit 35 through the protection switch 33 and the second diode 32, so as to eliminate the positive charges accumulated on the static electricity generating unit 35.
Further, the protection switch 33 controls connection and disconnection between the static electricity generating unit 36 and the node P by the voltage of the static electricity generating unit 36. Specifically, when the voltage of the static electricity generating unit 36 is within the preset voltage range, the protection switch 33 is in an off state, and the static electricity generating unit 36 is isolated from the low voltage unit 34 and the high voltage unit 35; when the voltage of the static electricity generating unit 36 exceeds the preset voltage range, the protection switch 33 is in a conducting state, and the static electricity generating unit 36 discharges static electricity to the low voltage unit 34 or the high voltage unit 35.
Further, the protection switch 33 includes a transistor T, a first resistor R1, and a second resistor R2;
the first resistor R1 is connected between the gate of the transistor T and the drain of the transistor T through the first wire S1; the second resistor R2 is connected between the gate of the transistor T and the source of the transistor T through the second wire S2; the first resistor R1 and the second resistor R2 limit the current flowing through the first conducting wire S1 and the second conducting wire S2, so that the gate voltage of the transistor T is within a reasonable range to control the on/off state of the transistor T, for example, when the voltage of the static electricity generating unit 36 is within the preset voltage range, the gate voltage of the transistor T is insufficient to turn on the transistor T, that is, the protection switch 33 is in the off state; when the voltage of the static electricity generating unit 36 exceeds the preset voltage, the gate voltage of the transistor T is sufficient to turn on the transistor T, that is, the protection switch 33 is in a conducting state; the resistances of the first resistor R1 and the second resistor R2, and the on-voltage of the transistor T may be set as required, and are not limited herein.
The electrostatic protection circuit that this embodiment provided will predetermine the voltage range and set up to be between the voltage that the low-voltage unit provided and the voltage that the high-voltage unit provided, to the stable circuit of normal operating voltage, the circuit of great fluctuation can not appear in normal operating voltage itself promptly, and electrostatic protection's response speed is fast, and electrostatic protection is effectual.
Second embodiment:
the normal operating voltage of the static electricity generating unit 36 is a preset voltage, the minimum voltage value of the preset voltage is smaller than the voltage value provided by the low voltage unit 34, and the maximum voltage value of the preset voltage is larger than the voltage value provided by the high voltage unit 35, for example, when the voltage provided by the low voltage unit 34 is-5V and the voltage provided by the high voltage unit 35 is +5V, the preset voltage may be a voltage value between-4V and + 6V;
it should be noted that the electrostatic protection circuit provided in the second embodiment is mainly directed to a circuit in which a normal operating voltage fluctuates, for example, the normal operating voltage of the electrostatic generating unit 36 is maintained between-5V and +5V for a long time, but the voltage of the electrostatic generating unit 36 exceeds the range of-5V to +5V due to the normal fluctuation of the internal circuit, and at this time, the voltage of the electrostatic generating unit 36 is still the normal operating voltage and should not be released by the electrostatic protection circuit.
When the voltage of the static electricity generating unit 36 is lower than the preset voltage due to the accumulation of negative charges, a path is formed between the low voltage unit 34 and the static electricity generating unit 36, and current flows from the low voltage unit 34 to the static electricity generating unit 36 through the first diode 31 and the protection switch 33, so as to eliminate the negative charges accumulated on the static electricity generating unit 36;
when the voltage of the static electricity generating unit 36 is higher than the preset voltage due to the accumulation of positive charges, a path is formed between the static electricity generating unit 36 and the high voltage unit 35, and a current flows from the static electricity generating unit 36 to the high voltage unit 35 through the protection switch 33 and the second diode 32 to eliminate the positive charges accumulated on the static electricity generating unit 35;
it should be noted that the protection switch 33 is controlled in its on-off state by the voltage of the static electricity generation unit 36; the protection switch 33 is turned on only when the voltage of the static electricity generating unit 36 exceeds a preset voltage; when the voltage of the static electricity generating unit 36 exceeds the voltage range provided by the low voltage unit 34 and the high voltage unit 35 but does not exceed the preset voltage range, the protection switch 33 is in an off state to prevent the normal operating voltage of the static electricity generating unit 36 from being discharged to the low voltage unit 34 or the high voltage unit 35, i.e., to prevent electric leakage.
Further, the protection switch 33 includes a transistor T, a first resistor R1, and a second resistor R2;
the first resistor R1 is connected between the gate of the transistor T and the drain of the transistor T through the first wire S1; the second resistor R2 is connected between the gate of the transistor T and the source of the transistor T through the second wire S2; the first resistor R1 and the second resistor R2 limit the current flowing through the first conducting wire S1 and the second conducting wire S2, so that the gate voltage of the transistor T is within a reasonable range to control the on/off state of the transistor T, for example, when the voltage of the static electricity generating unit 36 is within the preset voltage range, the gate voltage of the transistor T is insufficient to turn on the transistor T, that is, the protection switch 33 is in the off state; when the voltage of the static electricity generating unit 36 exceeds the preset voltage, the gate voltage of the transistor T is sufficient to turn on the transistor T, that is, the protection switch 33 is in a conducting state; the resistances of the first resistor R1 and the second resistor R2, and the on-voltage of the transistor T may be set as required, and are not limited herein.
Optionally, the electrostatic protection circuit is applied to an integrated circuit.
The electrostatic protection circuit provided by the embodiment sets the preset voltage range to exceed the voltage range limited by the voltage provided by the low-voltage unit and the voltage provided by the high-voltage unit, can prevent electric leakage for a circuit with normal working voltage having certain fluctuation, and has good electrostatic protection effect.
The electrostatic protection circuit provided by the embodiment of the invention does not comprise a capacitor and other devices which occupy larger space, so that the whole size is smaller, and the electrostatic protection circuit is suitable for being applied to small-size circuit design.
In summary, although the present invention has been described with reference to the specific embodiments, the above embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention is defined by the appended claims.
Claims (8)
1. An electrostatic discharge protection circuit, comprising:
the first diode has a one-way conduction function, and the input end of the first diode is connected with the low-voltage unit;
the second diode has a one-way conduction function, the input end of the second diode is connected with the output end of the first diode, and the output end of the second diode is connected with the high-voltage unit; and
a protection switch having on and off functions, the protection switch including a transistor, a first resistor and a second resistor, the first resistor being connected between a gate of the transistor and a drain of the transistor through a first wire, the second resistor being connected between the gate of the transistor and a source of the transistor through a second wire, the source of the transistor being connected to a node between the first diode and the second diode, the drain of the transistor being connected to a static electricity generating unit; wherein the content of the first and second substances,
the static electricity generated by the static electricity generating unit is discharged to the low voltage unit or the high voltage unit through the protection switch.
2. The ESD protection circuit of claim 1, wherein the normal operating voltage of the ESD generating unit is a predetermined voltage, and the predetermined voltage is between the voltage provided by the low voltage unit and the voltage provided by the high voltage unit.
3. The ESD protection circuit of claim 1, wherein the normal operating voltage of the ESD generating unit is a predetermined voltage, a minimum voltage of the predetermined voltage is smaller than a voltage provided by the low voltage unit, and a maximum voltage of the predetermined voltage is larger than a voltage provided by the high voltage unit.
4. The electrostatic protection circuit of any of claims 2 or 3,
when the voltage of the static electricity generating unit is lower than the preset voltage, a passage is formed between the low-voltage unit and the static electricity generating unit;
when the voltage of the static electricity generating unit is higher than the preset voltage, a path is formed between the static electricity generating unit and the high-voltage unit.
5. The ESD protection circuit of claim 2 or 3, wherein the protection switch controls the electrostatic generator and the node to be turned on or off according to the voltage of the electrostatic generator.
6. The electrostatic protection circuit of claim 5,
when the voltage of the static electricity generating unit is higher than or lower than the preset voltage, the grid electrode of the transistor controls the source electrode of the transistor to be conducted with the drain electrode of the transistor, and the static electricity generated by the static electricity generating unit is released to the high-voltage unit or the low-voltage unit.
7. The ESD protection circuit of claim 6 wherein the gate voltage of the transistor controls the source of the transistor to be connected to or disconnected from the drain of the transistor.
8. The ESD protection circuit of claim 1, wherein the ESD protection circuit is implemented in an integrated circuit.
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| CN201910391825.3A CN110198028B (en) | 2019-05-13 | 2019-05-13 | Electrostatic protection circuit |
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| CN201910391825.3A CN110198028B (en) | 2019-05-13 | 2019-05-13 | Electrostatic protection circuit |
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| CN110198028B true CN110198028B (en) | 2021-08-24 |
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| CN101378056A (en) * | 2007-08-28 | 2009-03-04 | 松下电器产业株式会社 | Semiconductor integrated circuit |
| US7821752B2 (en) * | 2007-02-15 | 2010-10-26 | Hynix Semiconductor Inc. | Device to protect a semiconductor device from electrostatic discharge by efficiently discharging a micro current |
| CN102693978A (en) * | 2011-03-25 | 2012-09-26 | 瑞昱半导体股份有限公司 | Electrostatic discharge protection circuit |
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| CN108347044A (en) * | 2017-01-25 | 2018-07-31 | 瑞昱半导体股份有限公司 | Electrostatic discharge protection circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6507471B2 (en) * | 2000-12-07 | 2003-01-14 | Koninklijke Philips Electronics N.V. | ESD protection devices |
| TWI455435B (en) * | 2012-12-07 | 2014-10-01 | Issc Technologies Corp | Esd protection circuit, bias circuit and electronic apparatus |
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2019
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7821752B2 (en) * | 2007-02-15 | 2010-10-26 | Hynix Semiconductor Inc. | Device to protect a semiconductor device from electrostatic discharge by efficiently discharging a micro current |
| CN101378056A (en) * | 2007-08-28 | 2009-03-04 | 松下电器产业株式会社 | Semiconductor integrated circuit |
| CN102693978A (en) * | 2011-03-25 | 2012-09-26 | 瑞昱半导体股份有限公司 | Electrostatic discharge protection circuit |
| CN103887306A (en) * | 2014-03-05 | 2014-06-25 | 晶焱科技股份有限公司 | High voltage open drain electrostatic discharge (ESD) protecting device |
| CN108347044A (en) * | 2017-01-25 | 2018-07-31 | 瑞昱半导体股份有限公司 | Electrostatic discharge protection circuit |
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